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TW200410258A - Built-in-self-test of flash memory cells - Google Patents

Built-in-self-test of flash memory cells Download PDF

Info

Publication number
TW200410258A
TW200410258A TW92118440A TW92118440A TW200410258A TW 200410258 A TW200410258 A TW 200410258A TW 92118440 A TW92118440 A TW 92118440A TW 92118440 A TW92118440 A TW 92118440A TW 200410258 A TW200410258 A TW 200410258A
Authority
TW
Taiwan
Prior art keywords
flash memory
state
bist
address
logic
Prior art date
Application number
TW92118440A
Other languages
English (en)
Chinese (zh)
Inventor
Colin S Bill
Azrul Halim
Darlene G Hamilton
Edward V Bautista Jr
Weng-Fook Lee
Ken Cheong Cheah
Boon Law Chee
Tang Teh Boon
Kucera Joseph
Salleh Syahrizal
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/200,518 external-priority patent/US7010736B1/en
Priority claimed from US10/200,540 external-priority patent/US20040049724A1/en
Priority claimed from US10/200,539 external-priority patent/US6707718B1/en
Priority claimed from US10/200,330 external-priority patent/US6665214B1/en
Priority claimed from US10/200,544 external-priority patent/US6631086B1/en
Priority claimed from US10/200,526 external-priority patent/US7028240B1/en
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of TW200410258A publication Critical patent/TW200410258A/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/72—Masking faults in memories by using spares or by reconfiguring with optimized replacement algorithms
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/14—Implementation of control logic, e.g. test mode decoders
    • G11C29/16—Implementation of control logic, e.g. test mode decoders using microprogrammed units, e.g. state machines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/44—Indication or identification of errors, e.g. for repair
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/48—Arrangements in static stores specially adapted for testing by means external to the store, e.g. using direct memory access [DMA] or using auxiliary access paths
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Tests Of Electronic Circuits (AREA)
TW92118440A 2002-07-22 2003-07-07 Built-in-self-test of flash memory cells TW200410258A (en)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US20054302A 2002-07-22 2002-07-22
US20053802A 2002-07-22 2002-07-22
US10/200,518 US7010736B1 (en) 2002-07-22 2002-07-22 Address sequencer within BIST (Built-in-Self-Test) system
US10/200,540 US20040049724A1 (en) 2002-07-22 2002-07-22 Built-in-self-test (BIST) of flash memory cells and implementation of BIST interface
US10/200,539 US6707718B1 (en) 2002-07-22 2002-07-22 Generation of margining voltage on-chip during testing CAM portion of flash memory device
US10/200,330 US6665214B1 (en) 2002-07-22 2002-07-22 On-chip erase pulse counter for efficient erase verify BIST (built-in-self-test) mode
US10/200,544 US6631086B1 (en) 2002-07-22 2002-07-22 On-chip repair of defective address of core flash memory cells
US10/200,526 US7028240B1 (en) 2002-07-22 2002-07-22 Diagnostic mode for testing functionality of BIST (built-in-self-test) back-end state machine

Publications (1)

Publication Number Publication Date
TW200410258A true TW200410258A (en) 2004-06-16

Family

ID=30773813

Family Applications (1)

Application Number Title Priority Date Filing Date
TW92118440A TW200410258A (en) 2002-07-22 2003-07-07 Built-in-self-test of flash memory cells

Country Status (8)

Country Link
EP (1) EP1529293B1 (de)
JP (1) JP2005534131A (de)
KR (1) KR100941745B1 (de)
CN (1) CN1679118A (de)
AU (1) AU2003243484A1 (de)
DE (1) DE60302473T2 (de)
TW (1) TW200410258A (de)
WO (1) WO2004010437A1 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI401690B (zh) * 2008-12-24 2013-07-11 Phison Electronics Corp 快閃儲存裝置及其測試方法與測試系統
TWI711047B (zh) * 2018-06-18 2020-11-21 台灣積體電路製造股份有限公司 用以產生參考電流的參考電路和方法與記憶體裝置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7730368B2 (en) * 2003-10-31 2010-06-01 Sandisk Il Ltd. Method, system and computer-readable code for testing of flash memory
US7424659B2 (en) 2003-10-31 2008-09-09 Sandisk Il Ltd. System-in-package and method of testing thereof
CN101529518B (zh) * 2005-11-01 2013-10-30 晟碟以色列有限公司 用于测试快闪存储器的方法、系统和计算机可读代码
JP5023582B2 (ja) * 2006-07-05 2012-09-12 横河電機株式会社 半導体集積回路試験装置及び方法
US8627158B2 (en) 2011-12-08 2014-01-07 International Business Machines Corporation Flash array built in self test engine with trace array and flash metric reporting
JP5112566B1 (ja) * 2011-12-16 2013-01-09 株式会社東芝 半導体記憶装置、不揮発性半導体メモリの検査方法、及びプログラム
KR102055174B1 (ko) * 2012-06-18 2019-12-12 알레그로 마이크로시스템스, 엘엘씨 감지된 물체의 근접에 반응하여 근접 신호의 하나 또는 그 이상의 특성 값들이 분류되는 셋 또는 그 이상의 포텐셜 카테고리들의 적어도 하나를 전달할 수 있는 자기장 센서들 및 관련 기술들
US8754640B2 (en) * 2012-06-18 2014-06-17 Allegro Microsystems, Llc Magnetic field sensors and related techniques that can provide self-test information in a formatted output signal
CN103514129B (zh) * 2012-06-21 2017-03-29 深圳市中兴微电子技术有限公司 一种芯片接口转换方法及芯片
US8830756B2 (en) * 2013-01-23 2014-09-09 Freescale Semiconductor, Inc. Dynamic detection method for latent slow-to-erase bit for high performance and high reliability flash memory
TWI569284B (zh) * 2015-05-27 2017-02-01 慧榮科技股份有限公司 記憶體控制器與記憶體模組
CN107301880B (zh) * 2017-06-15 2020-03-17 西安微电子技术研究所 一种片上嵌入式Flash的内建自测试结构
US10656170B2 (en) 2018-05-17 2020-05-19 Allegro Microsystems, Llc Magnetic field sensors and output signal formats for a magnetic field sensor
TWI676989B (zh) * 2018-11-20 2019-11-11 華邦電子股份有限公司 記憶體裝置及其內置自測試方法
CN111292795B (zh) * 2019-05-23 2022-02-01 展讯通信（上海）有限公司 存储器的内建自测试系统
CN110364214A (zh) * 2019-06-28 2019-10-22 珠海博雅科技有限公司 一种读失效存储单元的替换方法、装置、设备及存储介质
CN110473586B (zh) * 2019-07-31 2021-05-14 珠海博雅科技有限公司 一种写失效存储单元的替换方法、装置、设备及存储介质
CN112331253B (zh) * 2020-10-30 2023-12-08 深圳市宏旺微电子有限公司 一种芯片的测试方法、终端和存储介质
CN114678058B (zh) * 2020-12-24 2025-08-19 浙江驰拓科技有限公司 一种mram读写电压的校准电路及其校准方法、mram
CN112733478B (zh) * 2021-04-01 2021-08-03 芯华章科技股份有限公司 用于对设计进行形式验证的装置
CN113409845A (zh) * 2021-05-11 2021-09-17 珠海博雅科技有限公司 非易失性存储器的替换方法、装置及存储介质
CN113225232B (zh) * 2021-05-12 2022-06-10 中国第一汽车股份有限公司 硬件测试方法、装置、计算机设备及存储介质
CN114586102A (zh) 2022-01-20 2022-06-03 长江存储科技有限责任公司 使用内部固件执行自验证的nand存储器中的数据保护
US12449279B2 (en) 2024-02-07 2025-10-21 Allegro Microsystems, Llc Dynamic resolution sensor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2768175B2 (ja) * 1992-10-26 1998-06-25 日本電気株式会社 半導体メモリ
US5675546A (en) * 1996-06-07 1997-10-07 Texas Instruments Incorporated On-chip automatic procedures for memory testing
US6044481A (en) * 1997-05-09 2000-03-28 Artisan Components, Inc. Programmable universal test interface for testing memories with different test methodologies
JPH11329000A (ja) * 1998-05-19 1999-11-30 Mitsubishi Electric Corp 内蔵メモリテスト方法、およびそれに用いるバスインタフェースユニット、コマンドデコーダ
JP2001014890A (ja) * 1999-06-30 2001-01-19 Mitsubishi Electric Corp 半導体装置および半導体装置のテスト方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI401690B (zh) * 2008-12-24 2013-07-11 Phison Electronics Corp 快閃儲存裝置及其測試方法與測試系統
TWI711047B (zh) * 2018-06-18 2020-11-21 台灣積體電路製造股份有限公司 用以產生參考電流的參考電路和方法與記憶體裝置

Also Published As

Publication number Publication date
JP2005534131A (ja) 2005-11-10
KR20050021543A (ko) 2005-03-07
AU2003243484A1 (en) 2004-02-09
WO2004010437A1 (en) 2004-01-29
CN1679118A (zh) 2005-10-05
EP1529293A1 (de) 2005-05-11
EP1529293B1 (de) 2005-11-23
DE60302473D1 (de) 2005-12-29
KR100941745B1 (ko) 2010-02-11
DE60302473T2 (de) 2006-08-24

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