TW200304959A - Method for coating a substrate and device for carrying out the method - Google Patents
Method for coating a substrate and device for carrying out the method Download PDFInfo
- Publication number
- TW200304959A TW200304959A TW092106298A TW92106298A TW200304959A TW 200304959 A TW200304959 A TW 200304959A TW 092106298 A TW092106298 A TW 092106298A TW 92106298 A TW92106298 A TW 92106298A TW 200304959 A TW200304959 A TW 200304959A
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- item
- reaction chamber
- patent application
- scope
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 36
- 239000000758 substrate Substances 0.000 title claims abstract description 36
- 238000000576 coating method Methods 0.000 title claims abstract description 6
- 239000011248 coating agent Substances 0.000 title claims abstract description 5
- 239000007789 gas Substances 0.000 claims abstract description 55
- 239000012159 carrier gas Substances 0.000 claims abstract description 19
- 239000000203 mixture Substances 0.000 claims abstract description 17
- 239000007787 solid Substances 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 92
- 238000006243 chemical reaction Methods 0.000 claims description 45
- 239000010408 film Substances 0.000 claims description 44
- 230000007246 mechanism Effects 0.000 claims description 25
- 239000010409 thin film Substances 0.000 claims description 16
- 239000013589 supplement Substances 0.000 claims description 14
- 239000011344 liquid material Substances 0.000 claims description 12
- 239000011343 solid material Substances 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 11
- 230000008859 change Effects 0.000 claims description 5
- 239000000725 suspension Substances 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 claims description 2
- 230000003667 anti-reflective effect Effects 0.000 claims 1
- 238000005137 deposition process Methods 0.000 claims 1
- 238000004090 dissolution Methods 0.000 claims 1
- 239000007788 liquid Substances 0.000 abstract description 4
- 239000007858 starting material Substances 0.000 abstract 4
- 239000000443 aerosol Substances 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 description 10
- 238000001704 evaporation Methods 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000010494 dissociation reaction Methods 0.000 description 4
- 230000005593 dissociations Effects 0.000 description 4
- 238000005192 partition Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 230000002496 gastric effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10212923A DE10212923A1 (de) | 2002-03-22 | 2002-03-22 | Verfahren zum Beschichten eines Substrates und Vorrichtung zur Durchführung des Verfahrens |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200304959A true TW200304959A (en) | 2003-10-16 |
Family
ID=28050772
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092106298A TW200304959A (en) | 2002-03-22 | 2003-03-21 | Method for coating a substrate and device for carrying out the method |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP1488023A1 (de) |
| JP (1) | JP2005520687A (de) |
| KR (1) | KR20040104527A (de) |
| AU (1) | AU2003215669A1 (de) |
| DE (1) | DE10212923A1 (de) |
| TW (1) | TW200304959A (de) |
| WO (1) | WO2003080893A1 (de) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10256850A1 (de) * | 2002-12-04 | 2004-06-24 | Basf Ag | Verfahren und Aufdampfung von Verbindung(en) auf einen Träger |
| DE10315215A1 (de) * | 2003-04-03 | 2004-10-14 | Basf Ag | In-situ Neubeschichtung von Katalysatorschüttungen |
| CN1938447B (zh) * | 2004-03-29 | 2010-06-09 | 大见忠弘 | 成膜装置及成膜方法 |
| DE102006027932A1 (de) | 2006-06-14 | 2007-12-20 | Aixtron Ag | Verfahren zum selbstlimitierenden Abscheiden ein oder mehrerer Monolagen |
| JP5043394B2 (ja) * | 2006-09-29 | 2012-10-10 | 東京エレクトロン株式会社 | 蒸着装置およびその運転方法 |
| DE102007030499A1 (de) * | 2007-06-30 | 2009-01-08 | Aixtron Ag | Vorrichtung und Verfahren zum Abscheiden von insbesondere dotierten Schichten mittels OVPD oder dergleichen |
| DE102008045982A1 (de) | 2008-09-05 | 2010-03-11 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung von nanoskaligen Netzwerken auf Oberflächen |
| CN102770946A (zh) * | 2010-02-26 | 2012-11-07 | 泰拉半导体株式会社 | 多晶硅层的制造方法及用于其的金属混合层形成装置 |
| DE102011051260A1 (de) * | 2011-06-22 | 2012-12-27 | Aixtron Se | Verfahren und Vorrichtung zum Abscheiden von OLEDs |
| WO2013011974A1 (ja) * | 2011-07-21 | 2013-01-24 | Jsr株式会社 | 金属体を備える基体の製造方法 |
| KR20150065515A (ko) * | 2013-12-05 | 2015-06-15 | 롬엔드하스전자재료코리아유한회사 | 유기전계발광재료 정제장치 및 정제방법 |
| DE102014100135A1 (de) | 2014-01-08 | 2015-07-09 | Aixtron Se | Gasmischvorrichtung an einem Reaktor mit Wegeventil |
| DE102014115497A1 (de) | 2014-10-24 | 2016-05-12 | Aixtron Se | Temperierte Gaszuleitung mit an mehreren Stellen eingespeisten Verdünnungsgasströmen |
| DE102019128752A1 (de) | 2019-10-24 | 2021-04-29 | Apeva Se | Verfahren zur Herstellung übereinander gestapelter OLEDs |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2794294B2 (ja) * | 1988-07-08 | 1998-09-03 | 科学技術振興事業団 | 酸化物超伝導体厚膜の形成法並びに装置 |
| JPH06158306A (ja) * | 1992-11-27 | 1994-06-07 | Vacuum Metallurgical Co Ltd | ガス・デポジション法によるスパッター用ターゲットの製造方法およびその製造装置 |
| JPH09268378A (ja) * | 1996-04-01 | 1997-10-14 | Dainippon Printing Co Ltd | 厚膜パターン形成方法及び該方法による厚膜パターン |
| JP3967455B2 (ja) * | 1998-03-30 | 2007-08-29 | Ｄｏｗａホールディングス株式会社 | カリウム含有薄膜及びその製法 |
| DE10007059A1 (de) * | 2000-02-16 | 2001-08-23 | Aixtron Ag | Verfahren und Vorrichtung zur Herstellung von beschichteten Substraten mittels Kondensationsbeschichtung |
-
2002
- 2002-03-22 DE DE10212923A patent/DE10212923A1/de not_active Ceased
-
2003
- 2003-03-19 WO PCT/EP2003/002860 patent/WO2003080893A1/de not_active Ceased
- 2003-03-19 JP JP2003578614A patent/JP2005520687A/ja active Pending
- 2003-03-19 EP EP03744817A patent/EP1488023A1/de not_active Withdrawn
- 2003-03-19 KR KR10-2004-7014802A patent/KR20040104527A/ko not_active Withdrawn
- 2003-03-19 AU AU2003215669A patent/AU2003215669A1/en not_active Abandoned
- 2003-03-21 TW TW092106298A patent/TW200304959A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2003080893A1 (de) | 2003-10-02 |
| KR20040104527A (ko) | 2004-12-10 |
| JP2005520687A (ja) | 2005-07-14 |
| EP1488023A1 (de) | 2004-12-22 |
| WO2003080893B1 (de) | 2003-12-18 |
| AU2003215669A1 (en) | 2003-10-08 |
| DE10212923A1 (de) | 2004-01-08 |
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