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AU2003215669A1 - Method for coating a substrate and device for carrying out the method - Google Patents

Method for coating a substrate and device for carrying out the method

Info

Publication number
AU2003215669A1
AU2003215669A1 AU2003215669A AU2003215669A AU2003215669A1 AU 2003215669 A1 AU2003215669 A1 AU 2003215669A1 AU 2003215669 A AU2003215669 A AU 2003215669A AU 2003215669 A AU2003215669 A AU 2003215669A AU 2003215669 A1 AU2003215669 A1 AU 2003215669A1
Authority
AU
Australia
Prior art keywords
coating
substrate
carrying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003215669A
Other languages
English (en)
Inventor
Michael Heuken
Holger Jurgensen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron SE filed Critical Aixtron SE
Publication of AU2003215669A1 publication Critical patent/AU2003215669A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
AU2003215669A 2002-03-22 2003-03-19 Method for coating a substrate and device for carrying out the method Abandoned AU2003215669A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10212923A DE10212923A1 (de) 2002-03-22 2002-03-22 Verfahren zum Beschichten eines Substrates und Vorrichtung zur Durchführung des Verfahrens
DE10212923.1 2002-03-22
PCT/EP2003/002860 WO2003080893A1 (de) 2002-03-22 2003-03-19 Verfahren zum beschichten eines substrates und vorrichtung zur durchführung des verfahrens

Publications (1)

Publication Number Publication Date
AU2003215669A1 true AU2003215669A1 (en) 2003-10-08

Family

ID=28050772

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003215669A Abandoned AU2003215669A1 (en) 2002-03-22 2003-03-19 Method for coating a substrate and device for carrying out the method

Country Status (7)

Country Link
EP (1) EP1488023A1 (de)
JP (1) JP2005520687A (de)
KR (1) KR20040104527A (de)
AU (1) AU2003215669A1 (de)
DE (1) DE10212923A1 (de)
TW (1) TW200304959A (de)
WO (1) WO2003080893A1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10256850A1 (de) * 2002-12-04 2004-06-24 Basf Ag Verfahren und Aufdampfung von Verbindung(en) auf einen Träger
DE10315215A1 (de) * 2003-04-03 2004-10-14 Basf Ag In-situ Neubeschichtung von Katalysatorschüttungen
KR100830388B1 (ko) * 2004-03-29 2008-05-20 도쿄엘렉트론가부시키가이샤 막 형성 장치 및 막 형성 방법
DE102006027932A1 (de) 2006-06-14 2007-12-20 Aixtron Ag Verfahren zum selbstlimitierenden Abscheiden ein oder mehrerer Monolagen
JP5043394B2 (ja) * 2006-09-29 2012-10-10 東京エレクトロン株式会社 蒸着装置およびその運転方法
DE102007030499A1 (de) * 2007-06-30 2009-01-08 Aixtron Ag Vorrichtung und Verfahren zum Abscheiden von insbesondere dotierten Schichten mittels OVPD oder dergleichen
DE102008045982A1 (de) 2008-09-05 2010-03-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung von nanoskaligen Netzwerken auf Oberflächen
CN102770946A (zh) * 2010-02-26 2012-11-07 泰拉半导体株式会社 多晶硅层的制造方法及用于其的金属混合层形成装置
DE102011051260A1 (de) * 2011-06-22 2012-12-27 Aixtron Se Verfahren und Vorrichtung zum Abscheiden von OLEDs
JP5971248B2 (ja) * 2011-07-21 2016-08-17 Jsr株式会社 金属体を備える基体の製造方法
KR20150065515A (ko) * 2013-12-05 2015-06-15 롬엔드하스전자재료코리아유한회사 유기전계발광재료 정제장치 및 정제방법
DE102014100135A1 (de) 2014-01-08 2015-07-09 Aixtron Se Gasmischvorrichtung an einem Reaktor mit Wegeventil
DE102014115497A1 (de) 2014-10-24 2016-05-12 Aixtron Se Temperierte Gaszuleitung mit an mehreren Stellen eingespeisten Verdünnungsgasströmen
DE102019128752A1 (de) 2019-10-24 2021-04-29 Apeva Se Verfahren zur Herstellung übereinander gestapelter OLEDs

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2794294B2 (ja) * 1988-07-08 1998-09-03 科学技術振興事業団 酸化物超伝導体厚膜の形成法並びに装置
JPH06158306A (ja) * 1992-11-27 1994-06-07 Vacuum Metallurgical Co Ltd ガス・デポジション法によるスパッター用ターゲットの製造方法およびその製造装置
JPH09268378A (ja) * 1996-04-01 1997-10-14 Dainippon Printing Co Ltd 厚膜パターン形成方法及び該方法による厚膜パターン
JP3967455B2 (ja) * 1998-03-30 2007-08-29 Ｄｏｗａホールディングス株式会社 カリウム含有薄膜及びその製法
DE10007059A1 (de) * 2000-02-16 2001-08-23 Aixtron Ag Verfahren und Vorrichtung zur Herstellung von beschichteten Substraten mittels Kondensationsbeschichtung

Also Published As

Publication number Publication date
WO2003080893B1 (de) 2003-12-18
TW200304959A (en) 2003-10-16
EP1488023A1 (de) 2004-12-22
DE10212923A1 (de) 2004-01-08
JP2005520687A (ja) 2005-07-14
WO2003080893A1 (de) 2003-10-02
KR20040104527A (ko) 2004-12-10

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase