[go: up one dir, main page]

SG94751A1 - Method for the production of substrates, magnetron source and sputter-coating chamber - Google Patents

Method for the production of substrates, magnetron source and sputter-coating chamber

Info

Publication number
SG94751A1
SG94751A1 SG200100544A SG200100544A SG94751A1 SG 94751 A1 SG94751 A1 SG 94751A1 SG 200100544 A SG200100544 A SG 200100544A SG 200100544 A SG200100544 A SG 200100544A SG 94751 A1 SG94751 A1 SG 94751A1
Authority
SG
Singapore
Prior art keywords
sputter
substrates
production
coating chamber
magnetron source
Prior art date
Application number
SG200100544A
Other languages
English (en)
Inventor
Cord Bernhard
Deppisch Gerd
Schuller Karl-Heinz
Keitel Oliver
Original Assignee
Unaxis Deutschland Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unaxis Deutschland Gmbh filed Critical Unaxis Deutschland Gmbh
Publication of SG94751A1 publication Critical patent/SG94751A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
SG200100544A 2000-02-04 2001-02-02 Method for the production of substrates, magnetron source and sputter-coating chamber SG94751A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10004824A DE10004824B4 (de) 2000-02-04 2000-02-04 Verfahren zur Herstellung von Substraten, Magnetronquelle, Sputterbeschichtungskammer und Verwendung des Verfahrens

Publications (1)

Publication Number Publication Date
SG94751A1 true SG94751A1 (en) 2003-03-18

Family

ID=7629755

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200100544A SG94751A1 (en) 2000-02-04 2001-02-02 Method for the production of substrates, magnetron source and sputter-coating chamber

Country Status (5)

Country Link
US (3) US6579424B2 (de)
JP (1) JP5068904B2 (de)
DE (1) DE10004824B4 (de)
SG (1) SG94751A1 (de)
TW (1) TWI247820B (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005019100B4 (de) * 2005-04-25 2009-02-12 Steag Hamatech Ag Magnetsystem für eine Zerstäubungskathode
US20080047831A1 (en) * 2006-08-24 2008-02-28 Hendryk Richert Segmented/modular magnet bars for sputtering target
EP2162899B1 (de) * 2007-06-15 2015-01-21 Oerlikon Advanced Technologies AG Mehrtarget-sputter-quelle und verfahren zur abscheidung von mehrfachschichten
US20100044222A1 (en) * 2008-08-21 2010-02-25 Guardian Industries Corp., Sputtering target including magnetic field uniformity enhancing sputtering target backing tube
US8685214B1 (en) 2011-09-30 2014-04-01 WD Media, LLC Magnetic shunting pads for optimizing target erosion in sputtering processes
JP2013082961A (ja) * 2011-10-07 2013-05-09 Ulvac Japan Ltd スパッタ装置
US9708706B2 (en) * 2011-11-30 2017-07-18 Taiwan Semiconductor Manufacturing Co., Ltd. PVD apparatus and method with deposition chamber having multiple targets and magnets
CN108004516B (zh) * 2016-10-31 2020-06-19 北京北方华创微电子装备有限公司 磁控溅射腔室、磁控溅射设备以及磁控管
US11488814B2 (en) 2018-10-29 2022-11-01 Taiwan Semiconductor Manufacturing Co., Ltd. Permeance magnetic assembly
CN113699495B (zh) * 2021-06-21 2023-12-22 北京北方华创微电子装备有限公司 磁控溅射组件、磁控溅射设备及磁控溅射方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4872964A (en) * 1985-08-02 1989-10-10 Fujitsu Limited Planar magnetron sputtering apparatus and its magnetic source
US5252194A (en) * 1990-01-26 1993-10-12 Varian Associates, Inc. Rotating sputtering apparatus for selected erosion
US5997697A (en) * 1995-10-06 1999-12-07 Balzers Aktiengesellschaft Magnetron sputtering source and method of use thereof

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6282516A (ja) * 1985-10-07 1987-04-16 Victor Co Of Japan Ltd 磁気デイスクの製造法
DE3800449A1 (de) * 1988-01-09 1989-07-20 Leybold Ag Verfahren und einrichtung zur herstellung magnetooptischer, speicher- und loeschfaehiger datentraeger
JP2558892B2 (ja) * 1989-10-12 1996-11-27 松下電器産業株式会社 空気調和機の運転制御装置およびタイマー運転制御方法
EP0439360A3 (en) * 1990-01-26 1992-01-15 Varian Associates, Inc. Rotating sputtering apparatus for selected erosion
US5126029A (en) * 1990-12-27 1992-06-30 Intel Corporation Apparatus and method for achieving via step coverage symmetry
US5254236A (en) * 1991-01-25 1993-10-19 Shibaura Engineering Works Co., Ltd. Sputtering apparatus
JP2505724B2 (ja) * 1992-05-15 1996-06-12 アネルバ株式会社 マグネトロンスパッタリング装置
US5374343A (en) * 1992-05-15 1994-12-20 Anelva Corporation Magnetron cathode assembly
US5248402A (en) * 1992-07-29 1993-09-28 Cvc Products, Inc. Apple-shaped magnetron for sputtering system
CA2111536A1 (en) * 1992-12-16 1994-06-17 Geri M. Actor Collimated deposition apparatus
DE19508535A1 (de) * 1995-03-10 1996-09-12 Leybold Materials Gmbh Sputtertarget aus einer Kobalt-Basislegierung mit hohem Magnetfelddurchgriff
GB2319262B (en) * 1995-07-10 1999-02-24 Cvc Products Inc Permanent magnet array apparatus and method
US5830327A (en) * 1996-10-02 1998-11-03 Intevac, Inc. Methods and apparatus for sputtering with rotating magnet sputter sources
US6342131B1 (en) * 1998-04-17 2002-01-29 Kabushiki Kaisha Toshiba Method of depositing a multilayer thin film by means of magnetron sputtering which controls the magnetic field

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4872964A (en) * 1985-08-02 1989-10-10 Fujitsu Limited Planar magnetron sputtering apparatus and its magnetic source
US5252194A (en) * 1990-01-26 1993-10-12 Varian Associates, Inc. Rotating sputtering apparatus for selected erosion
US5997697A (en) * 1995-10-06 1999-12-07 Balzers Aktiengesellschaft Magnetron sputtering source and method of use thereof

Also Published As

Publication number Publication date
DE10004824B4 (de) 2009-06-25
US20050217992A1 (en) 2005-10-06
DE10004824A1 (de) 2001-08-16
US6579424B2 (en) 2003-06-17
US20010022271A1 (en) 2001-09-20
JP2001279439A (ja) 2001-10-10
JP5068904B2 (ja) 2012-11-07
US20030201174A1 (en) 2003-10-30
TWI247820B (en) 2006-01-21

Similar Documents

Publication Publication Date Title
AU2001289826A1 (en) Process for surface modifying substrates and modified substrates resulting therefrom
AU2000266138A1 (en) Method of making elastic articles having improved heat-resistance
AU2001227573A1 (en) Ceramics and process for producing
AU2003259147A1 (en) Continuous chemical vapor deposition process and process furnace
AU2002213384A1 (en) Process for treating textile substrates
AU3926901A (en) High frequency plasma source
AU2002333347A1 (en) Process for the production of scleroglucan
AU2001286983A1 (en) Method of treatment
SG94751A1 (en) Method for the production of substrates, magnetron source and sputter-coating chamber
AU4973799A (en) Methods for plasma modification of substrates
AU2001232263A1 (en) Method of treating seeds
AU2001230207A1 (en) Method for the production of 1-amino-3-aryl-uracils
AU2002323633A1 (en) Flat magnetron sputter apparatus
AU2002365814A1 (en) Method of treating asthma
AU2001253836A1 (en) Method of treating cancer
AU2002365372A1 (en) New process
AU4303001A (en) Process for production of diphenyl-dialkoxysilane, phenylalkyl-dialkoxysilane, octaphenylcyclotetrasiloxane and sym-tetraalkyltetraphenyl-cyclotetrasiloxane
AU2001263777A1 (en) Redeposition or backstain inhibition during stonewashing process
AU2002250831A1 (en) Method for the production of sputtering targets
AU2002357591A1 (en) Substrate treating method
AU2001262177A1 (en) Method of treatment
AU7664500A (en) Wire-shaped product, method for its manufacturing, and wear part made of the product
AU2002335992A1 (en) Process for the production of ascopyrone p
AU2002226018A1 (en) Process for the production of diaryl carbonates
AU2003227487A1 (en) Novel pickle and sesoning liquor and process for producing the same