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KR900005571A - 화합물 반도체장치와 그 제조방법 - Google Patents

화합물 반도체장치와 그 제조방법 Download PDF

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Publication number
KR900005571A
KR900005571A KR1019890013280A KR890013280A KR900005571A KR 900005571 A KR900005571 A KR 900005571A KR 1019890013280 A KR1019890013280 A KR 1019890013280A KR 890013280 A KR890013280 A KR 890013280A KR 900005571 A KR900005571 A KR 900005571A
Authority
KR
South Korea
Prior art keywords
semiconductor device
compound semiconductor
silicon oxide
oxide film
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019890013280A
Other languages
English (en)
Inventor
유타카 도미사와
다츠로 미타니
소이치 이마무라
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR900005571A publication Critical patent/KR900005571A/ko
Ceased legal-status Critical Current

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Classifications

    • H10P14/6923—
    • H10P14/60—
    • H10P14/6334—
    • H10P14/662—
    • H10P14/69215—

Landscapes

  • Formation Of Insulating Films (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

내용 없음

Description

화합물 반도체장치와 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도와 제2도는 본 발명의 실시예에 따른 화합물반도체장치의 제조공정도.

Claims (3)

  1. 화합물반도체장치에 있어서, 적어도 상기 화합물반도체장치의 주면에 제 1표면보호막(6)으로서 인을 함유하는 산화규소막이 형성되고, 이 산화규소막의 외측을 덮도록 제2표면보호막(7)으로서 인을 함유하지 않은 산화규소막이 적층된 것을 특징으로 하는 화합물반도체장치.
  2. 화합물반도체장치의 제조방법에 있어서, 적어도 화합물반도체장치의 주면에 제 1표면보호막(6)으로서 인을 함유하는 산화규소막을 형성한 다음, 이 산화규소막의 외측을 덮도록 제2표면보호막(7)으로서 인을 함유하지 않은 산화규소막을 적층시키도록 된 것을 특징으로 하는 화합물반도체장치의 제조방법.
  3. 제 2항에 있어서, 상기 제1 및 제 2표면보호막(6, 7)의 생성온도가 350℃ 이하인 것을 특징으로 하는 화합물반도체장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890013280A 1988-09-13 1989-09-12 화합물 반도체장치와 그 제조방법 Ceased KR900005571A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP88-229005 1988-09-13
JP63229005A JPH088265B2 (ja) 1988-09-13 1988-09-13 化合物半導体装置とその製造方法

Publications (1)

Publication Number Publication Date
KR900005571A true KR900005571A (ko) 1990-04-14

Family

ID=16885267

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890013280A Ceased KR900005571A (ko) 1988-09-13 1989-09-12 화합물 반도체장치와 그 제조방법

Country Status (3)

Country Link
EP (1) EP0359202A1 (ko)
JP (1) JPH088265B2 (ko)
KR (1) KR900005571A (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006120694A (ja) * 2004-10-19 2006-05-11 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
JP2009103229A (ja) * 2007-10-24 2009-05-14 Mazda Motor Corp 自動変速機
KR20110043663A (ko) * 2008-07-16 2011-04-27 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 반도체 장치 및 제조 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3967310A (en) * 1968-10-09 1976-06-29 Hitachi, Ltd. Semiconductor device having controlled surface charges by passivation films formed thereon
BE788518A (fr) * 1971-09-09 1973-03-07 Philips Nv Lampe a incandescence electrique
JPS49134276A (ko) * 1973-04-27 1974-12-24
US4091406A (en) * 1976-11-01 1978-05-23 Rca Corporation Combination glass/low temperature deposited Siw Nx Hy O.sub.z
JPS5730337A (en) * 1980-07-30 1982-02-18 Nec Corp Formation of surface protecting film for semiconductor
EP0105915A1 (en) * 1982-04-23 1984-04-25 Western Electric Company, Incorporated Semiconductor integrated circuit structures having insulated conductors
JPS604224A (ja) * 1983-06-22 1985-01-10 Nec Corp 半導体装置の製造方法
AU2992784A (en) * 1983-06-29 1985-01-03 Stauffer Chemical Company Passivation and insulation of iii-v devices with pnictides
JPS6279629A (ja) * 1985-10-03 1987-04-13 Mitsubishi Electric Corp 半導体装置の製造方法
EP0245290A1 (en) * 1985-11-04 1987-11-19 Motorola, Inc. Glass intermetal dielectric
JPS634611A (ja) * 1986-06-25 1988-01-09 Hitachi Ltd 半導体装置及びその製造方法
JPS63122225A (ja) * 1986-11-12 1988-05-26 Fujitsu Ltd ３元以上の酸化珪素膜の成長方法

Also Published As

Publication number Publication date
JPH088265B2 (ja) 1996-01-29
JPH0276231A (ja) 1990-03-15
EP0359202A1 (en) 1990-03-21

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