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KR20160119187A - 내플라즈마 부품 및 내플라즈마 부품의 제조 방법 및 내플라즈마 부품의 제조에 사용하는 막 퇴적 장치 - Google Patents

내플라즈마 부품 및 내플라즈마 부품의 제조 방법 및 내플라즈마 부품의 제조에 사용하는 막 퇴적 장치 Download PDF

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Publication number
KR20160119187A
KR20160119187A KR1020167024605A KR20167024605A KR20160119187A KR 20160119187 A KR20160119187 A KR 20160119187A KR 1020167024605 A KR1020167024605 A KR 1020167024605A KR 20167024605 A KR20167024605 A KR 20167024605A KR 20160119187 A KR20160119187 A KR 20160119187A
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KR
South Korea
Prior art keywords
film
oxide
plasma
particles
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020167024605A
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English (en)
Korean (ko)
Inventor
미치오 사토
다카시 히노
마사시 나카타니
다카시 나카무라
Original Assignee
가부시끼가이샤 도시바
도시바 마테리알 가부시키가이샤
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Filing date
Publication date
Application filed by 가부시끼가이샤 도시바, 도시바 마테리알 가부시키가이샤 filed Critical 가부시끼가이샤 도시바
Publication of KR20160119187A publication Critical patent/KR20160119187A/ko
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • C23C4/11—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/134—Plasma spraying
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/18—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Electrochemistry (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
KR1020167024605A 2014-03-31 2015-03-20 내플라즈마 부품 및 내플라즈마 부품의 제조 방법 및 내플라즈마 부품의 제조에 사용하는 막 퇴적 장치 Ceased KR20160119187A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2014-073959 2014-03-31
JP2014073959 2014-03-31
PCT/JP2015/058458 WO2015151857A1 (ja) 2014-03-31 2015-03-20 耐プラズマ部品及び耐プラズマ部品の製造方法及び耐プラズマ部品の製造に用いる膜堆積装置

Publications (1)

Publication Number Publication Date
KR20160119187A true KR20160119187A (ko) 2016-10-12

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167024605A Ceased KR20160119187A (ko) 2014-03-31 2015-03-20 내플라즈마 부품 및 내플라즈마 부품의 제조 방법 및 내플라즈마 부품의 제조에 사용하는 막 퇴적 장치

Country Status (5)

Country Link
US (1) US20170022595A1 (ja)
JP (1) JPWO2015151857A1 (ja)
KR (1) KR20160119187A (ja)
CN (1) CN106164325A (ja)
WO (1) WO2015151857A1 (ja)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9583369B2 (en) 2013-07-20 2017-02-28 Applied Materials, Inc. Ion assisted deposition for rare-earth oxide based coatings on lids and nozzles
US9725799B2 (en) 2013-12-06 2017-08-08 Applied Materials, Inc. Ion beam sputtering with ion assisted deposition for coatings on chamber components
US10730798B2 (en) 2014-05-07 2020-08-04 Applied Materials, Inc. Slurry plasma spray of plasma resistant ceramic coating
US10196728B2 (en) 2014-05-16 2019-02-05 Applied Materials, Inc. Plasma spray coating design using phase and stress control
US9620466B1 (en) * 2015-11-30 2017-04-11 Infineon Technologies Ag Method of manufacturing an electronic device having a contact pad with partially sealed pores
US11326253B2 (en) 2016-04-27 2022-05-10 Applied Materials, Inc. Atomic layer deposition of protective coatings for semiconductor process chamber components
US9850573B1 (en) 2016-06-23 2017-12-26 Applied Materials, Inc. Non-line of sight deposition of erbium based plasma resistant ceramic coating
US20180016678A1 (en) 2016-07-15 2018-01-18 Applied Materials, Inc. Multi-layer coating with diffusion barrier layer and erosion resistant layer
US10186400B2 (en) 2017-01-20 2019-01-22 Applied Materials, Inc. Multi-layer plasma resistant coating by atomic layer deposition
US10755900B2 (en) 2017-05-10 2020-08-25 Applied Materials, Inc. Multi-layer plasma erosion protection for chamber components
WO2019044850A1 (ja) 2017-09-01 2019-03-07 学校法人 芝浦工業大学 部品および半導体製造装置
US11279656B2 (en) 2017-10-27 2022-03-22 Applied Materials, Inc. Nanopowders, nanoceramic materials and methods of making and use thereof
JP6934401B2 (ja) * 2017-11-13 2021-09-15 日本特殊陶業株式会社 溶射部材の製造方法
US10443126B1 (en) 2018-04-06 2019-10-15 Applied Materials, Inc. Zone-controlled rare-earth oxide ALD and CVD coatings
TWI668320B (zh) * 2018-05-09 2019-08-11 馗鼎奈米科技股份有限公司 提高抗汙膜之附著力的方法
US11667575B2 (en) 2018-07-18 2023-06-06 Applied Materials, Inc. Erosion resistant metal oxide coatings
JP2020084287A (ja) * 2018-11-29 2020-06-04 日本特殊陶業株式会社 膜付き部材及びその製造方法、並びに膜付き部材の評価方法
US11180847B2 (en) 2018-12-06 2021-11-23 Applied Materials, Inc. Atomic layer deposition coatings for high temperature ceramic components
JP2020141123A (ja) 2019-02-27 2020-09-03 Toto株式会社 半導体製造装置用部材および半導体製造装置用部材を備えた半導体製造装置並びにディスプレイ製造装置
EP3933065A4 (en) * 2019-03-01 2022-08-17 NHK Spring Co., Ltd. STAGE AND METHOD OF MAKING A STAGE
US10858741B2 (en) 2019-03-11 2020-12-08 Applied Materials, Inc. Plasma resistant multi-layer architecture for high aspect ratio parts
JP7189371B2 (ja) * 2019-09-30 2022-12-13 京セラ株式会社 プラズマ処理装置用部材およびこれを備えるプラズマ処理装置
KR20230058069A (ko) * 2020-09-09 2023-05-02 미쓰비시 마테리알 가부시키가이샤 내플라즈마 코팅막, 그 막 형성용 졸 겔액, 내플라즈마 코팅막의 형성 방법 및 내플라즈마 코팅막 형성 기재

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006108178A (ja) 2004-09-30 2006-04-20 Toshiba Corp 半導体製造装置用部品及び半導体製造装置
JP4084689B2 (ja) 2003-03-26 2008-04-30 京セラ株式会社 耐食性部材とその製造方法およびそれを用いた半導体・液晶製造装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4606121B2 (ja) * 2004-01-29 2011-01-05 京セラ株式会社 耐食膜積層耐食性部材およびその製造方法
JP4813115B2 (ja) * 2005-07-14 2011-11-09 国立大学法人東北大学 半導体製造装置用部材及びその洗浄方法
JP2008227190A (ja) * 2007-03-13 2008-09-25 Toto Ltd 静電チャック、静電チャックの製造方法および基板処理装置
KR101453706B1 (ko) * 2010-12-01 2014-10-22 가부시끼가이샤 도시바 플라즈마 에칭 장치용 부품 및 플라즈마 에칭 장치용 부품의 제조 방법
JP2012221979A (ja) * 2011-04-04 2012-11-12 Toshiba Corp プラズマ処理装置
WO2013176168A1 (ja) * 2012-05-22 2013-11-28 株式会社東芝 プラズマ処理装置用部品およびプラズマ処理装置用部品の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4084689B2 (ja) 2003-03-26 2008-04-30 京セラ株式会社 耐食性部材とその製造方法およびそれを用いた半導体・液晶製造装置
JP2006108178A (ja) 2004-09-30 2006-04-20 Toshiba Corp 半導体製造装置用部品及び半導体製造装置

Also Published As

Publication number Publication date
WO2015151857A1 (ja) 2015-10-08
US20170022595A1 (en) 2017-01-26
JPWO2015151857A1 (ja) 2017-04-13
CN106164325A (zh) 2016-11-23

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