JPH11267526A - Method and apparatus for producing highly active catalyst - Google Patents
Method and apparatus for producing highly active catalystInfo
- Publication number
- JPH11267526A JPH11267526A JP10072059A JP7205998A JPH11267526A JP H11267526 A JPH11267526 A JP H11267526A JP 10072059 A JP10072059 A JP 10072059A JP 7205998 A JP7205998 A JP 7205998A JP H11267526 A JPH11267526 A JP H11267526A
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- reaction tube
- inert gas
- gas
- catalyst carrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003054 catalyst Substances 0.000 title claims abstract description 99
- 238000000034 method Methods 0.000 title description 6
- 239000002994 raw material Substances 0.000 claims abstract description 70
- 238000006243 chemical reaction Methods 0.000 claims abstract description 65
- 239000011261 inert gas Substances 0.000 claims abstract description 50
- 239000007789 gas Substances 0.000 claims abstract description 48
- 238000001704 evaporation Methods 0.000 claims abstract description 42
- 239000002184 metal Substances 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 238000000354 decomposition reaction Methods 0.000 claims abstract description 10
- 238000010438 heat treatment Methods 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000013078 crystal Substances 0.000 abstract description 6
- 230000000694 effects Effects 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Exhaust Gas Treatment By Means Of Catalyst (AREA)
- Catalysts (AREA)
Abstract
(57)【要約】
【課題】 長さが長い高活性触媒を容易に製造すること
ができ、しかも触媒担体に結晶構造が制御された金属層
を形成して高品質の高活性触媒を製造する。
【解決手段】 蒸発部1に装入された原料ソース2を蒸
発温度に加熱して蒸発させ、蒸発部1における原料ソー
ス2の蒸気を不活性ガス5で搬送することにより原料ガ
ス14として反応管22に供給し、反応管22の内部に
備えらて原料ガス14の分解温度に加熱された触媒担体
30に原料ガス14を接触させることにより原料ガス1
4中の金属を触媒担体30に担持させる際に、反応管2
2の外部に反応管22の外周を所要の幅で取り巻くよう
にした加熱器31と触媒担体30の少なくとも一方を他
方に対して反応管22の軸方向に相対移動させるように
する。
PROBLEM TO BE SOLVED: To produce a high-quality active catalyst by forming a metal layer with a controlled crystal structure on a catalyst carrier, which can easily produce a highly active catalyst having a long length. . SOLUTION: A raw material source 2 charged in an evaporating part 1 is heated to an evaporating temperature to evaporate, and the vapor of the raw material source 2 in the evaporating part 1 is conveyed by an inert gas 5 to form a reaction tube as a raw material gas 14. The raw material gas 1 is supplied to the catalyst support 30 heated to the decomposition temperature of the raw material gas provided in the reaction tube 22 and brought into contact with the raw material gas 1.
When the metal in 4 is supported on the catalyst carrier 30, the reaction tube 2
At least one of the heater 31 and the catalyst carrier 30 which surrounds the outer periphery of the reaction tube 22 with a required width outside the tube 2 is moved relative to the other in the axial direction of the reaction tube 22.
Description
【0001】[0001]
【発明の属する技術分野】本発明は、高活性触媒製造方
法及び装置に関するものである。[0001] The present invention relates to a method and an apparatus for producing a highly active catalyst.
【0002】[0002]
【従来の技術】従来より、排ガス等を処理する際に、触
媒を用いて排ガス中の有害成分を分解反応、還元反応さ
せて無害化することが実施されている。2. Description of the Related Art Conventionally, when treating exhaust gas or the like, harmful components in the exhaust gas have been detoxified by a decomposition reaction and a reduction reaction using a catalyst.
【0003】このような排ガス処理等に用いられる触媒
としては、従来より酸化チタン、アルミナ、シリカ等を
主体としたハニカム形状、或いはペレット状等の種々の
形態のものが用いられている。[0003] As a catalyst used for such an exhaust gas treatment or the like, various forms such as a honeycomb shape or a pellet shape mainly composed of titanium oxide, alumina, silica and the like have been used.
【0004】一方、近年では、前記酸化チタン、アルミ
ナ、シリカ等を主体とした触媒を触媒担体として、この
触媒担体に、鉄(Fe)、銅(Cu)、ニッケル(N
i)等の金属を担持させることにより、触媒の高活性化
を図ることが行われるようになってきている。On the other hand, in recent years, a catalyst mainly comprising the above-mentioned titanium oxide, alumina, silica or the like has been used as a catalyst carrier, and iron (Fe), copper (Cu), nickel (N
By supporting a metal such as i) and the like, it is becoming more and more effective to increase the activity of the catalyst.
【0005】このような触媒担体に金属を担持させて高
活性触媒を製造する方法としては、CVD(Chemi
cal Vapor Deposition)、或いは
CVDの1つの方法である原子レベルで蒸着させるよう
にしたALE(AtomicLayer Epitax
y)等を用いることが考えられる。[0005] As a method for producing a highly active catalyst by supporting a metal on such a catalyst carrier, CVD (Chemi) is used.
CAL (AtomicLayer Epitax) that is deposited at the atomic level, which is one of the methods of cal vapor deposition (CVD) or CVD.
It is conceivable to use y) or the like.
【0006】工業的には未だ実施されていないが、実験
室レベルで高活性触媒を製造する方法として考えられて
いるCVDについて説明すると、図3に示すような高活
性触媒製造装置を用いることができる。[0006] CVD, which has not been industrially implemented yet but is considered as a method for producing a highly active catalyst at a laboratory level, will be described. An apparatus for producing a highly active catalyst as shown in FIG. it can.
【0007】図中1は原料ソース2を蒸発温度に加熱す
る蒸発部であり、該蒸発部1には、金属塩化物、金属ア
ルコキシド、金属カルボニル、金属アセテート等のCV
Dにおいて通常使用される原料ソース2が収容されるよ
うになっており、且つ蒸発部1の外部には前記原料ソー
ス2を蒸発温度まで加熱するための原料加熱器3が設け
られている。前記原料加熱器3には、高周波加熱器、電
気ヒータ等の種々の加熱器を用いることができる。前記
原料ソース2は、一例を挙げると常温或いは100℃前
後程度で液状を呈するもの等が用いられている。In FIG. 1, reference numeral 1 denotes an evaporator for heating a raw material source 2 to an evaporating temperature. The evaporator 1 includes a CV such as a metal chloride, metal alkoxide, metal carbonyl, or metal acetate.
D, a raw material source 2 generally used is accommodated, and a raw material heater 3 for heating the raw material source 2 to an evaporation temperature is provided outside the evaporating section 1. Various heaters such as a high-frequency heater and an electric heater can be used as the raw material heater 3. As the raw material source 2, for example, a material that exhibits a liquid state at room temperature or about 100 ° C. is used.
【0008】図3においては2つの蒸発部1を設けるよ
うにしており、該蒸発部1には、別の原料ソース2を収
容しても良く或いは同じ原料ソース2を収容するように
しても良い。また、蒸発部1を3個以上備えて別々の原
料ソース2を収容させるようにすることもできる。In FIG. 3, two evaporating units 1 are provided, and the evaporating unit 1 may accommodate another raw material source 2 or the same raw material source 2. . Further, three or more evaporating units 1 may be provided to accommodate different raw material sources 2.
【0009】前記各蒸発部1は、不活性ガス供給装置4
からのアルゴンガス、ヘリウムガス、窒素ガス等の不活
性ガス5を供給する不活性ガス供給主管6に分岐管7,
8を介して並列に接続されており、且つ各分岐管7,8
には、不活性ガス供給装置4から供給される不活性ガス
5の流量を個別に調節できるようにした流量調節器9,
10が設けられている。また、前記蒸発部1の夫々の出
口は混合管11に接続されている。また、前記各蒸発部
1は、並列に設けられることなく、単独に設けられてい
ても良い。Each of the evaporating sections 1 includes an inert gas supply device 4
An inert gas supply main pipe 6 for supplying an inert gas 5 such as argon gas, helium gas, nitrogen gas, etc.
8 and connected in parallel, and each branch pipe 7, 8
A flow controller 9, which can individually adjust the flow rate of the inert gas 5 supplied from the inert gas supply device 4,
10 are provided. Each outlet of the evaporator 1 is connected to a mixing pipe 11. Further, the respective evaporating sections 1 may be provided independently without being provided in parallel.
【0010】更に、前記不活性ガス供給主管6には分岐
管12を介して流量調節器13が接続されており、該流
量調節器13からの不活性ガス5を前記混合管11に導
入して混合することにより所定濃度の原料ガス14を生
成させるようにした濃度調節装置15を構成している。Further, a flow controller 13 is connected to the inert gas supply main pipe 6 via a branch pipe 12, and the inert gas 5 from the flow controller 13 is introduced into the mixing pipe 11. The concentration adjusting device 15 is configured to generate the source gas 14 having a predetermined concentration by mixing.
【0011】図中16,17,18は前記分岐管7,
8,12の夫々に備えた開閉弁、19,20,21は前
記蒸発部1及び流量調節器13の夫々の出口に備えた開
閉弁を示す。In the figure, 16, 17, and 18 are the branch pipes 7,
Opening / closing valves provided at 8, 12 respectively indicate opening / closing valves provided at outlets of the evaporating section 1 and the flow controller 13 respectively.
【0012】図中22は前記混合管11に接続された反
応管であり、該反応管22の内部に備えた担体支持台2
3上には、酸化チタン、アルミナ、シリカ等を主体とし
た触媒担体24が保持されている。反応管22は、混合
管11による原料ガス14が一端側から導入されて、他
端側の導出管25から導出されるようになっている。図
中26は導出管25に接続された排気用ポンプである。In FIG. 1, reference numeral 22 denotes a reaction tube connected to the mixing tube 11, and a carrier support 2 provided inside the reaction tube 22.
On 3, a catalyst carrier 24 mainly composed of titanium oxide, alumina, silica, or the like is held. The reaction tube 22 is configured so that the raw material gas 14 from the mixing tube 11 is introduced from one end side and is led out from the outlet tube 25 on the other end side. In the figure, reference numeral 26 denotes an exhaust pump connected to the outlet pipe 25.
【0013】前記反応管22の外部には、該反応管22
の外周を包囲して反応管22の内部に保持された触媒担
体24を全体的に加熱するようにした加熱器27が設け
られており、該加熱器27は固定台28に固定されるよ
うになっている。The reaction tube 22 is located outside the reaction tube 22.
Is provided so as to entirely heat the catalyst carrier 24 held inside the reaction tube 22 by surrounding the outer periphery of the reaction tube 22. The heater 27 is fixed to a fixing table 28. Has become.
【0014】図3に示した従来の高活性触媒製造装置を
用いて高活性触媒を製造するには、反応管22内部の担
体支持台23に触媒担体24を保持させると共に、前記
蒸発部1に前記触媒担体24に担持させようとする金属
の化合物である原料ソース2を装入する。In order to produce a highly active catalyst using the conventional highly active catalyst producing apparatus shown in FIG. 3, a catalyst support 24 is held on a carrier support 23 inside a reaction tube 22 and the evaporating section 1 The raw material source 2 which is a metal compound to be supported on the catalyst carrier 24 is charged.
【0015】加熱器27を作動して、反応管22内部の
触媒担体24を原料ガス14の分解温度まで加熱する一
方、開閉弁16,17,18,19,20,21を開け
ると共に流量調節器9,10,13を開けて、吸引装置
26を作動することにより反応管22に不活性ガス5を
供給し、反応管22の内部を不活性ガス5で置換する。The heater 27 is operated to heat the catalyst carrier 24 inside the reaction tube 22 to the decomposition temperature of the raw material gas 14, while opening the on-off valves 16, 17, 18, 19, 20, 21 and controlling the flow rate. The inert gas 5 is supplied to the reaction tube 22 by opening the 9, 10, 13 and operating the suction device 26, and the inside of the reaction tube 22 is replaced with the inert gas 5.
【0016】続いて、蒸発部1の原料加熱器3を作動し
て原料ソース2を蒸発する温度まで加熱すると共に、流
量調節器9,10の開度を調節することにより蒸発部1
に供給する不活性ガス5の流量を調節し、且つ濃度調節
装置15の流量調節器13の開度を調節することにより
原料ガス14の濃度を調節する。Subsequently, the raw material heater 3 of the evaporating section 1 is operated to heat the raw material source 2 to a temperature at which the raw material source 2 evaporates, and the openings of the flow rate controllers 9 and 10 are adjusted to thereby control the evaporating section 1.
The concentration of the source gas 14 is adjusted by adjusting the flow rate of the inert gas 5 to be supplied to the apparatus and adjusting the opening of the flow rate adjuster 13 of the concentration adjusting device 15.
【0017】濃度が調節されて反応管22に供給された
原料ガス14は、該原料ガス14の分解温度まで加熱器
27によって加熱されている触媒担体24に接触するこ
とにより分解して原料ガス14中の金属が触媒担体24
に担持される。この操作を所定時間行った後、原料加熱
器3による原料ソース2及び加熱器27による触媒担体
24の加熱を停止し、且つ不活性ガス5の供給を停止
し、前記反応管22から触媒担体24に金属が担持され
た高活性触媒を取り出す。The raw material gas 14 whose concentration has been adjusted and supplied to the reaction tube 22 is decomposed by coming into contact with the catalyst carrier 24 heated by the heater 27 up to the decomposition temperature of the raw material gas 14 to be decomposed. The metal inside is the catalyst support 24
It is carried on. After performing this operation for a predetermined time, the heating of the catalyst source 24 by the source heater 2 and the heater 27 by the source heater 3 is stopped, and the supply of the inert gas 5 is stopped. A highly active catalyst having a metal supported thereon is taken out.
【0018】[0018]
【発明が解決しようとする課題】しかし、前記したよう
に、CVDを用いて触媒担体24に金属を担持させるこ
とにより高活性触媒を得ようとしても、図3に示したよ
うな従来の装置では、長さが長い大型の高活性触媒を製
造することが困難であり、工業的に利用することができ
なかった。However, as described above, even if an attempt is made to obtain a highly active catalyst by supporting a metal on the catalyst carrier 24 using CVD, the conventional apparatus as shown in FIG. However, it was difficult to produce a large, high-activity catalyst having a long length, and it could not be used industrially.
【0019】また、従来の装置において長さが長い大型
の高活性触媒を得るためには、触媒担体24を遠く離れ
た位置に設けた加熱器27によってできるだけ均一に加
熱する必要があるが、そのためには反応管22の容量を
大きくする必要があり、そのために装置全体が非常に大
型化してしまうという問題がある。In order to obtain a large and highly active catalyst having a long length in the conventional apparatus, it is necessary to heat the catalyst carrier 24 as uniformly as possible by a heater 27 provided at a position far away. Requires that the capacity of the reaction tube 22 be increased, which causes a problem that the entire apparatus becomes extremely large.
【0020】更に、従来の装置では、反応管22の外部
に固定した加熱器27により触媒担体24の全体を加熱
するようにしているために、触媒担体24の全体を均一
温度に加熱することは大変困難であり、従って触媒担体
24に温度のバラツキができて金属が付着し易い温度と
なっている箇所に集中して金属が付着するようになっ
て、結晶構造の制御が困難となり、触媒の活性化が低下
したり、触媒反応時における選択性が低下するといった
問題を生じる。Further, in the conventional apparatus, since the entire catalyst carrier 24 is heated by the heater 27 fixed to the outside of the reaction tube 22, it is impossible to heat the entire catalyst carrier 24 to a uniform temperature. It is very difficult, so that the temperature of the catalyst carrier 24 varies and the metal adheres intensively to the portion where the temperature is likely to adhere to the metal, which makes it difficult to control the crystal structure, and There are problems such as a decrease in activation and a decrease in selectivity during a catalytic reaction.
【0021】本発明は、かかる従来の問題点を解決すべ
くなしたもので、長さが長い高活性触媒を容易に製造す
ることができ、しかも触媒担体に結晶構造が制御された
金属層を形成して高品質の高活性触媒を製造することが
できる触媒製造方法及び装置を提供することを目的とし
ている。The present invention has been made to solve such a conventional problem. A long active catalyst having a long length can be easily produced, and a metal layer having a controlled crystal structure is formed on a catalyst carrier. It is an object of the present invention to provide a method and an apparatus for producing a catalyst that can be formed to produce a high-quality, high-activity catalyst.
【0022】[0022]
【課題を解決するための手段】請求項1記載の発明は、
蒸発部に装入された原料ソースを蒸発温度に加熱して蒸
発させ、蒸発部における原料ソースの蒸気を不活性ガス
で搬送することにより原料ガスとして反応管に供給し、
反応管の内部に備えられて原料ガスの分解温度に加熱さ
れた触媒担体に前記原料ガスを接触させることにより原
料ガス中の金属を触媒担体に担持させる際に、前記反応
管の外部に該反応管の外周を所要の幅で取り巻くように
した加熱器と前記触媒担体の少なくとも一方を他方に対
して前記反応管の軸方向に相対移動させることを特徴と
する高活性触媒製造方法、に係るものである。According to the first aspect of the present invention,
The raw material source charged in the evaporating section is heated to the evaporating temperature to evaporate, and the vapor of the raw material source in the evaporating section is supplied to the reaction tube as a raw material gas by transporting the vapor with an inert gas,
When the metal in the raw material gas is supported on the catalyst carrier by bringing the raw material gas into contact with the catalyst carrier that is provided inside the reaction tube and heated to the decomposition temperature of the raw material gas, the reaction is performed outside the reaction tube. A method for producing a highly active catalyst, characterized in that at least one of the heater and the catalyst carrier, which surrounds the outer periphery of a tube with a required width, is relatively moved in the axial direction of the reaction tube with respect to the other. It is.
【0023】請求項2記載の発明は、原料ソースを装入
して蒸発温度に加熱する蒸発部と、不活性ガスを蒸発部
に供給する不活性ガス供給装置と、該不活性ガス供給装
置から蒸発部に供給する不活性ガスの流量を調節する流
量調節器と、前記不活性ガス供給装置から分岐した不活
性ガスの流量を調節して前記蒸発部の出口に混合する原
料ガスの濃度調節装置と、内部に触媒担体を備え且つ一
端側から濃度が調節された原料ガスを導入して他端側か
ら導出するようにした反応管と、該反応管の外周を所要
の幅で取り巻くように配置した加熱器と、該加熱器を前
記反応管の軸方向に移動させる加熱器移動装置とを備え
たことを特徴とする高活性触媒製造装置、に係るもので
ある。According to a second aspect of the present invention, there is provided an evaporating section for charging a raw material source and heating it to an evaporating temperature, an inert gas supply apparatus for supplying an inert gas to the evaporating section, and an inert gas supply apparatus. A flow controller for controlling the flow rate of the inert gas supplied to the evaporator; and a concentration controller for the raw material gas mixed at the outlet of the evaporator by controlling the flow rate of the inert gas branched from the inert gas supply device. And a reaction tube provided with a catalyst carrier therein and adapted to introduce a source gas whose concentration is adjusted from one end side and to lead out from the other end side, and arranged so as to surround the outer periphery of the reaction tube with a required width. And a heater moving device for moving the heater in the axial direction of the reaction tube.
【0024】請求項3記載の発明は、原料ソースを装入
して蒸発温度に加熱する蒸発部と、不活性ガスを蒸発部
に供給する不活性ガス供給装置と、該不活性ガス供給装
置から蒸発部に供給する不活性ガスの流量を調節する流
量調節器と、前記不活性ガス供給装置から分岐した不活
性ガスの流量を調節して前記蒸発部の出口に混合する原
料ガスの濃度調節装置と、内部に移動用支持部材を介し
て触媒担体を保持し且つ一端側から濃度が調節された原
料ガスを導入して他端側から導出するようにした反応管
と、該反応管の外周を所要の幅で取り巻くように配置し
た加熱器と、前記移動用支持部材を前記反応管の軸方向
に移動する担体移動装置とを備えたことを特徴とする高
活性触媒製造装置、に係るものである。According to a third aspect of the present invention, there is provided an evaporating section for charging a raw material source and heating to an evaporating temperature, an inert gas supply device for supplying an inert gas to the evaporating section, and an inert gas supply device. A flow controller for controlling the flow rate of the inert gas supplied to the evaporator; and a concentration controller for the raw material gas mixed at the outlet of the evaporator by controlling the flow rate of the inert gas branched from the inert gas supply device. And a reaction tube that holds the catalyst carrier via a transfer support member therein and introduces a source gas whose concentration has been adjusted from one end and discharges the reaction gas from the other end. A high activity catalyst manufacturing apparatus, comprising: a heater arranged so as to surround a required width, and a carrier moving device that moves the moving support member in the axial direction of the reaction tube. is there.
【0025】上記請求項1〜3記載の手段によれば、反
応管の外部に設ける加熱器と反応管の内部に保持する触
媒担体との少なくとも一方を、他方に対して反応管の軸
方向に相対移動させるようにしているので、装置設備を
大型とすることなしに長い長さの触媒担体であっても、
均一な加熱を行わせて結晶構造が制御された金属層を触
媒担体に効率良く形成することができ、よって長さが長
く、均一な活性を有する高活性触媒を能率的に製造でき
る。According to the above-mentioned means, at least one of the heater provided outside the reaction tube and the catalyst carrier held inside the reaction tube is disposed in the axial direction of the reaction tube with respect to the other. Since it is made to move relatively, even if the catalyst support of a long length without increasing the size of the equipment,
A metal layer having a controlled crystal structure can be efficiently formed on the catalyst carrier by performing uniform heating, so that a highly active catalyst having a long length and uniform activity can be efficiently produced.
【0026】[0026]
【発明の実施の形態】以下、本発明の好適な実施の形態
を図面に基づいて説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below with reference to the drawings.
【0027】図1は、本発明の方法を実施する装置の一
例を示したものであり、図1中において図3と同一の構
成部分には同一の符号を付して詳細な説明は省略する。FIG. 1 shows an example of an apparatus for carrying out the method of the present invention. In FIG. 1, the same components as those in FIG. 3 are denoted by the same reference numerals, and detailed description is omitted. .
【0028】図1に示すように、反応管22の内部に、
担体支持台29を介して反応管22の軸方向に長い長さ
を有した触媒担体30を設けるようにしている。As shown in FIG. 1, inside the reaction tube 22,
A catalyst support 30 having a long length in the axial direction of the reaction tube 22 is provided via a support support 29.
【0029】反応管22の外部には、該反応管22の外
周を所要の幅を有して環状に取り巻くようにした高周波
加熱等を行う加熱器31を設ける。Outside the reaction tube 22, there is provided a heater 31 for performing high-frequency heating or the like in which the outer periphery of the reaction tube 22 has a required width and is annularly surrounded.
【0030】更に、該加熱器31は、前記反応管22の
軸方向と平行に設けられたガイドレール32に沿って移
動可能な移動台33上に支持されており、更に、例えば
移動台33に螺合して反応管22の軸方向に延びたボー
ルねじ34と、該ボールねじ34の回転を駆動するモー
タ35とからなる加熱器移動装置36によって移動され
るようになっている。Further, the heater 31 is supported on a movable table 33 movable along a guide rail 32 provided in parallel with the axial direction of the reaction tube 22. The ball screw 34 is screwed and extended in the axial direction of the reaction tube 22, and is moved by a heater moving device 36 including a motor 35 that drives the rotation of the ball screw 34.
【0031】以下に図1に示した装置の作用を説明す
る。The operation of the apparatus shown in FIG. 1 will be described below.
【0032】図1の装置により高活性触媒を製造するに
は、図3の装置で説明したのと同様に、反応管22内部
の担体支持台29に長い触媒担体30を保持させると共
に、前記蒸発部1に前記触媒担体30に担持させようと
する金属の化合物である原料ソース2を装入する。In order to produce a highly active catalyst using the apparatus shown in FIG. 1, a long catalyst carrier 30 is held on a carrier support base 29 inside the reaction tube 22 and the above-described evaporation is performed in the same manner as described with reference to the apparatus shown in FIG. A raw material source 2 which is a compound of a metal to be supported on the catalyst carrier 30 is charged into the part 1.
【0033】加熱器移動装置36の駆動により加熱器3
1を移動させて、加熱器31が反応管22内部の触媒担
体30の一端(左側)を加熱する位置に合わせる。The heater 3 is driven by the heater moving device 36.
1 is moved to a position where the heater 31 heats one end (left side) of the catalyst carrier 30 inside the reaction tube 22.
【0034】加熱器31を作動させて、反応管22内部
の触媒担体30の一端を、図中斜線で示すように原料ガ
ス14の分解温度まで加熱する一方、開閉弁16,1
7,18,19,20,21を開けると共に流量調節器
9,10,13を開けて、吸引装置26を作動すること
により反応管22に不活性ガス5を供給し、反応管22
の内部を不活性ガス5で置換する。The heater 31 is operated to heat one end of the catalyst carrier 30 inside the reaction tube 22 to the decomposition temperature of the raw material gas 14 as shown by hatching in FIG.
The inert gas 5 is supplied to the reaction tube 22 by opening the flow rate controllers 9, 10, and 13 and opening the flow controllers 9, 10 and 13 and operating the suction device 26.
Is replaced with an inert gas 5.
【0035】続いて、蒸発部1の原料加熱器3を作動し
て原料ソース2を蒸発する温度まで加熱すると共に、流
量調節器9,10の開度を調節することにより蒸発部1
に供給する不活性ガス5の流量を調節し、且つ濃度調節
装置15の流量調節器13の開度を調節することにより
原料ガス14の濃度を調節する。Subsequently, the raw material heater 3 of the evaporating section 1 is operated to heat the raw material source 2 to a temperature at which the raw material source 2 evaporates, and the openings of the flow rate controllers 9 and 10 are adjusted to thereby control the evaporating section 1.
The concentration of the source gas 14 is adjusted by adjusting the flow rate of the inert gas 5 to be supplied to the apparatus and adjusting the opening of the flow rate adjuster 13 of the concentration adjusting device 15.
【0036】濃度が調節されて反応管22に供給された
原料ガス14は、該原料ガス14の分解温度まで加熱器
31によって加熱されている触媒担体30の一端側(左
端側)に接触することにより分解し、原料ガス14中の
金属が触媒担体30の一端側に担持される。The raw material gas 14 whose concentration has been adjusted and supplied to the reaction tube 22 contacts one end (left end) of the catalyst carrier 30 which is heated by the heater 31 to the decomposition temperature of the raw material gas 14. , And the metal in the raw material gas 14 is supported on one end side of the catalyst carrier 30.
【0037】続いて、前記加熱器移動装置36を駆動し
て、加熱器31による触媒担体30の加熱が矢印で示す
ように、一端側(左端側)から他端側(右端側)に向う
ように一定の速度で加熱器31を移動させる。Subsequently, the heater moving device 36 is driven so that the heating of the catalyst carrier 30 by the heater 31 is directed from one end (left end) to the other end (right end) as indicated by an arrow. The heater 31 is moved at a constant speed.
【0038】すると、長い長さを有する触媒担体30で
あっても、均一な加熱を行わせて結晶構造が制御された
金属層を触媒担体30に能率良く形成することができ、
よって長さが長く、均一な活性を有する高活性触媒を能
率的に製造することができる。As a result, even if the catalyst carrier 30 has a long length, it is possible to efficiently form a metal layer having a controlled crystal structure on the catalyst carrier 30 by performing uniform heating.
Therefore, a highly active catalyst having a long length and uniform activity can be efficiently produced.
【0039】図2は本発明の方法を実施する装置の他の
例を示したもので、反応管22の外部に、該反応管22
の外周を所要の幅を有して環状に取り巻くようにした加
熱器37を固定台38上に固設する。FIG. 2 shows another example of an apparatus for carrying out the method of the present invention.
A heater 37 having a required width and surrounding the outer periphery of the heater in an annular shape is fixed on a fixed base 38.
【0040】また、前記反応管22の内部には、ローラ
等の移動用支持部材39を介して反応管22の軸方向に
長い長さを有した触媒担体30を設け、且つ移動用支持
部材39を駆動するようにした担体移動装置40を設け
ている。A catalyst support 30 having a long length in the axial direction of the reaction tube 22 is provided inside the reaction tube 22 via a movement support member 39 such as a roller. Is provided.
【0041】上記図2の装置により高活性触媒を製造す
るには、担体移動装置40の駆動により移動用支持部材
39を作動させて触媒担体30を移動させ、加熱器37
によって触媒担体30の他端側(右端側)が加熱される
位置に合わせる。In order to produce a highly active catalyst using the apparatus shown in FIG. 2, the carrier support device 39 is operated by driving the carrier moving device 40 to move the catalyst carrier 30, and the heater 37 is moved.
With this, the other end (right end) of the catalyst carrier 30 is adjusted to a position where it is heated.
【0042】加熱器37を作動させて、反応管22内部
の触媒担体30の一端を原料ガス14の分解温度まで加
熱する一方、開閉弁16,17,18,19,20,2
1を開けると共に流量調節器9,10,13を開けて、
吸引装置26を作動することにより反応管22に不活性
ガス5を供給し、反応管22の内部を不活性ガス5で置
換する。The heater 37 is operated to heat one end of the catalyst carrier 30 inside the reaction tube 22 to the decomposition temperature of the raw material gas 14, while opening and closing valves 16, 17, 18, 19, 20, 2.
Open 1 and open the flow controllers 9, 10, 13
The inert gas 5 is supplied to the reaction tube 22 by operating the suction device 26, and the inside of the reaction tube 22 is replaced with the inert gas 5.
【0043】続いて、蒸発部1の原料加熱器3を作動し
て原料ソース2を蒸発する温度まで加熱すると共に、流
量調節器9,10の開度を調節することにより蒸発部1
に供給する不活性ガス5の流量を調節し、且つ濃度調節
装置15の流量調節器13の開度を調節することにより
原料ガス14の濃度を調節する。Subsequently, the raw material heater 3 of the evaporating section 1 is operated to heat the raw material source 2 to a temperature at which the raw material source 2 evaporates, and the openings of the flow controllers 9 and 10 are adjusted to adjust the opening degree of the evaporating section 1.
The concentration of the source gas 14 is adjusted by adjusting the flow rate of the inert gas 5 to be supplied to the apparatus and adjusting the opening of the flow rate adjuster 13 of the concentration adjusting device 15.
【0044】濃度が調節されて反応管22に供給された
原料ガス14は、該原料ガス14の分解温度まで加熱器
37によって加熱されている触媒担体30の他端側(右
側端)に接触することにより分解し、原料ガス14中の
金属が触媒担体30の他端側に担持される。The raw material gas 14 whose concentration has been adjusted and supplied to the reaction tube 22 comes into contact with the other end (right end) of the catalyst carrier 30 which is heated by the heater 37 to the decomposition temperature of the raw material gas 14. As a result, the metal in the raw material gas 14 is supported on the other end of the catalyst carrier 30.
【0045】続いて、前記担体移動装置40を駆動して
ローラ等による移動用支持部材39を作動させることに
より、加熱器37による触媒担体30の加熱が図中矢印
で示すように他端側(右端側)から一端側(左端側)に
向うように一定の速度で触媒担体30を移動させる。Subsequently, by driving the carrier moving device 40 to operate the moving support member 39 such as a roller, the heating of the catalyst carrier 30 by the heater 37 is performed as shown by the arrow in the drawing. The catalyst carrier 30 is moved at a constant speed from the right end to the one end (left end).
【0046】すると、長い長さの触媒担体30であって
も、均一な加熱を行って一定の膜厚の金属層を触媒担体
30に効率良く形成させることができ、よって長さが長
く、均一な活性を有する高活性触媒を能率的に製造する
ことができる。Thus, even if the catalyst carrier 30 has a long length, the metal layer having a constant thickness can be efficiently formed on the catalyst carrier 30 by performing uniform heating. A highly active catalyst having a high activity can be efficiently produced.
【0047】前記図1及び図2に示した装置によって酸
化チタンを主体とした触媒担体30に金属を担持させて
高活性触媒を実際に製造する場合について説明すると、
CuCl3を原料ソース2に用いた場合に、不活性ガス
5としてアルゴンガスを用い、原料加熱器3によって原
料ソース2を500℃〜700℃程度で加熱することに
より蒸発させ、また加熱器31,37で反応管22内の
触媒担体30を550℃〜1000℃程度に加熱するこ
とにより原料ガス14を分解させて効果的に金属を触媒
担体30に担持させて高活性触媒を製造することができ
た。A case where a metal is supported on a catalyst carrier 30 mainly composed of titanium oxide by the apparatus shown in FIGS. 1 and 2 to actually produce a highly active catalyst will be described.
When CuCl3 is used for the raw material source 2, an argon gas is used as the inert gas 5, and the raw material source 2 is evaporated by heating the raw material source 2 at about 500 to 700 [deg.] C. by the raw material heater 3. By heating the catalyst support 30 in the reaction tube 22 to about 550 ° C. to 1000 ° C., the raw material gas 14 was decomposed and the metal was effectively supported on the catalyst support 30 to produce a highly active catalyst. .
【0048】また、同じく酸化チタンを主体とした触媒
担体30に金属を担持させて高活性触媒を実際に製造す
る際に、Ni(CO)4を原料ソース2に用いた場合
に、不活性ガス5としてアルゴンガスを用い、原料加熱
器3によって原料ソース2を43℃前後で加熱すること
により蒸発させ、また加熱器31,37で反応管22内
の触媒担体30を182℃〜200℃程度に加熱するこ
とにより原料ガスを分解させて効果的に金属を触媒担体
30に担持させて高活性触媒を製造することができた。When Ni (CO) 4 is used for the raw material source 2 when an active catalyst is actually produced by supporting a metal on a catalyst carrier 30 mainly composed of titanium oxide, an inert gas The raw material source 2 is heated at about 43 ° C. by the raw material heater 3 to evaporate it by using an argon gas as 5, and the catalyst carrier 30 in the reaction tube 22 is heated to about 182 ° C. to 200 ° C. By heating, the raw material gas was decomposed, and the metal was effectively supported on the catalyst carrier 30 to produce a highly active catalyst.
【0049】尚、本発明は上記形態例にのみ限定される
ものではなく、加熱器移動装置及び担体移動装置の構成
は種々選定し得ること、その他本発明の要旨を逸脱しな
い範囲内において種々変更を加え得ること、等は勿論で
ある。The present invention is not limited only to the above-described embodiment, and various configurations of the heater moving device and the carrier moving device can be selected, and various changes can be made without departing from the gist of the present invention. Can of course be added.
【0050】[0050]
【発明の効果】本発明によれば、反応管の外部に設ける
加熱器と反応管の内部に保持する触媒担体との少なくと
も一方を、他方に対して反応管の軸方向に相対移動させ
るようにしているので、装置設備を大型とすることなし
に長い長さの触媒担体であっても、均一な加熱を行わせ
て結晶構造が制御された金属層を触媒担体に効率良く形
成することができ、よって長さが長く、均一な活性を有
する高活性触媒を能率的に製造できるという優れた効果
を奏し得る。According to the present invention, at least one of the heater provided outside the reaction tube and the catalyst carrier held inside the reaction tube is moved relative to the other in the axial direction of the reaction tube. Therefore, even if the catalyst support has a long length without increasing the size of the equipment, it is possible to efficiently form a metal layer having a controlled crystal structure on the catalyst support by performing uniform heating. Accordingly, an excellent effect that a highly active catalyst having a long length and a uniform activity can be efficiently produced can be obtained.
【図1】本発明における高活性触媒製造装置の一例を示
す概略系統図である。FIG. 1 is a schematic system diagram showing an example of a highly active catalyst production apparatus according to the present invention.
【図2】本発明における高活性触媒製造装置の他の例を
示す概略系統図である。FIG. 2 is a schematic system diagram showing another example of the high activity catalyst production apparatus according to the present invention.
【図3】従来の高活性触媒製造装置の一例を示す概略系
統図である。FIG. 3 is a schematic system diagram showing an example of a conventional high activity catalyst production apparatus.
1 蒸発部 2 原料ソース 4 不活性ガス供給装置 5 不活性ガス 9,10,13 流量調節器 14 原料ガス 15 濃度調節装置 22 反応管 30 触媒担体 31 加熱器 36 加熱器移動装置 37 加熱器 39 移動用支持部材 40 担体移動装置 DESCRIPTION OF SYMBOLS 1 Evaporation part 2 Raw material source 4 Inert gas supply device 5 Inert gas 9,10,13 Flow controller 14 Raw material gas 15 Concentration controller 22 Reaction tube 30 Catalyst carrier 31 Heater 36 Heater moving device 37 Heater 39 Move Support member 40 carrier moving device
Claims (3)
度に加熱して蒸発させ、蒸発部における原料ソースの蒸
気を不活性ガスで搬送することにより原料ガスとして反
応管に供給し、反応管の内部に備えられて原料ガスの分
解温度に加熱された触媒担体に前記原料ガスを接触させ
ることにより原料ガス中の金属を触媒担体に担持させる
際に、前記反応管の外部に該反応管の外周を所要の幅で
取り巻くようにした加熱器と前記触媒担体の少なくとも
一方を他方に対して前記反応管の軸方向に相対移動させ
ることを特徴とする高活性触媒製造方法。1. A raw material source charged in an evaporating section is heated to an evaporating temperature to evaporate the raw material source, and the vapor of the raw material source in the evaporating section is supplied to a reaction tube as a raw material gas by being conveyed by an inert gas. When the metal in the raw material gas is supported on the catalyst carrier by bringing the raw material gas into contact with the catalyst carrier which is provided inside the tube and heated to the decomposition temperature of the raw material gas, the reaction tube is provided outside the reaction tube. A method for producing a highly active catalyst, characterized in that at least one of a heater and a catalyst carrier surrounding the outer periphery of a predetermined width is moved relative to the other in the axial direction of the reaction tube.
る蒸発部と、不活性ガスを蒸発部に供給する不活性ガス
供給装置と、該不活性ガス供給装置から蒸発部に供給す
る不活性ガスの流量を調節する流量調節器と、前記不活
性ガス供給装置から分岐した不活性ガスの流量を調節し
て前記蒸発部の出口に混合する原料ガスの濃度調節装置
と、内部に触媒担体を備え且つ一端側から濃度が調節さ
れた原料ガスを導入して他端側から導出するようにした
反応管と、該反応管の外周を所要の幅で取り巻くように
配置した加熱器と、該加熱器を前記反応管の軸方向に移
動させる加熱器移動装置とを備えたことを特徴とする高
活性触媒製造装置。2. An evaporating section for charging a raw material source and heating to an evaporating temperature, an inert gas supply device for supplying an inert gas to the evaporating section, and an inert gas supply device for supplying the inert gas from the inert gas supplying device to the evaporating section. A flow rate controller for controlling the flow rate of the active gas, a flow rate controller for controlling the flow rate of the inert gas branched from the inert gas supply device and mixing the raw material gas at the outlet of the evaporator, and a catalyst carrier therein. A reaction tube which is provided with a source gas whose concentration is adjusted from one end side and is led out from the other end side; a heater arranged so as to surround an outer periphery of the reaction tube with a required width; And a heater moving device for moving a heater in the axial direction of the reaction tube.
る蒸発部と、不活性ガスを蒸発部に供給する不活性ガス
供給装置と、該不活性ガス供給装置から蒸発部に供給す
る不活性ガスの流量を調節する流量調節器と、前記不活
性ガス供給装置から分岐した不活性ガスの流量を調節し
て前記蒸発部の出口に混合する原料ガスの濃度調節装置
と、内部に移動用支持部材を介して触媒担体を保持し且
つ一端側から濃度が調節された原料ガスを導入して他端
側から導出するようにした反応管と、該反応管の外周を
所要の幅で取り巻くように配置した加熱器と、前記移動
用支持部材を前記反応管の軸方向に移動する担体移動装
置とを備えたことを特徴とする高活性触媒製造装置。3. An evaporating section for charging a raw material source and heating to an evaporating temperature, an inert gas supply device for supplying an inert gas to the evaporating section, and an inert gas supply device for supplying the inert gas from the inert gas supplying device to the evaporating section. A flow controller for controlling the flow rate of the active gas, a flow rate controller for controlling the flow rate of the inert gas branched from the inert gas supply device and a concentration control device for the raw material gas mixed at the outlet of the evaporating section, A reaction tube holding the catalyst carrier via the support member and introducing a source gas whose concentration has been adjusted from one end side and drawing it out from the other end side, and surrounding the reaction tube with a required width. And a carrier moving device for moving the moving support member in the axial direction of the reaction tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10072059A JPH11267526A (en) | 1998-03-20 | 1998-03-20 | Method and apparatus for producing highly active catalyst |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10072059A JPH11267526A (en) | 1998-03-20 | 1998-03-20 | Method and apparatus for producing highly active catalyst |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11267526A true JPH11267526A (en) | 1999-10-05 |
Family
ID=13478446
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10072059A Pending JPH11267526A (en) | 1998-03-20 | 1998-03-20 | Method and apparatus for producing highly active catalyst |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11267526A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101211600B1 (en) | 2010-11-19 | 2012-12-12 | 한국과학기술연구원 | Apparatus and method for manufacturing manganese oxide-titania catalyst |
-
1998
- 1998-03-20 JP JP10072059A patent/JPH11267526A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101211600B1 (en) | 2010-11-19 | 2012-12-12 | 한국과학기술연구원 | Apparatus and method for manufacturing manganese oxide-titania catalyst |
| US8476185B2 (en) | 2010-11-19 | 2013-07-02 | Korea Institute Of Science And Technology | Apparatus and method for manufacturing manganese oxide-titania catalyst |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2000079576A1 (en) | Chemical deposition reactor and method of forming a thin film using the same | |
| WO1994017353B1 (en) | A rapid thermal processing apparatus for processing semiconductor wafers | |
| JPH03209817A (en) | Batch type heat treatment device | |
| JP2019529712A (en) | Apparatus and method for applying a carbon layer | |
| JPH11267526A (en) | Method and apparatus for producing highly active catalyst | |
| CN1737478A (en) | Heat treatment device | |
| KR100774781B1 (en) | Plasma processing apparatus | |
| JP3065039B2 (en) | Film forming method and apparatus | |
| KR102467379B1 (en) | Method for preparing catalyst using solution plasma process | |
| JP3093184B2 (en) | Film forming method and apparatus | |
| JPH11117071A (en) | CVD equipment | |
| KR20100034354A (en) | Apparatus for manufacturing carbon nano tubes and method for manufacturing carbon nano tubes employing the same | |
| JP4405973B2 (en) | Thin film production equipment | |
| CN115198252A (en) | Atomic layer deposition equipment and preparation method of atomic layer deposition film | |
| JPH0417887B2 (en) | ||
| JP3065042B2 (en) | Film forming method and apparatus | |
| JP2002180253A (en) | Thermal CVD equipment for forming graphite nanofiber thin films | |
| JP7758447B2 (en) | Film forming equipment | |
| JP4377008B2 (en) | Chemical vapor deposition method and chemical vapor deposition apparatus | |
| JPH0530351Y2 (en) | ||
| JP2010116305A (en) | Process of producing carbon nanotube and base material for growing carbon nanotube | |
| JPH03126876A (en) | Production device for silicon carbide film | |
| JP4603228B2 (en) | MOCVD apparatus and MOCVD method | |
| JP2010123852A (en) | Method and device for treating substrate | |
| JP2678462B2 (en) | Semiconductor manufacturing equipment |