JPH11117071A - CVD equipment - Google Patents

Abstract

(57) [Summary] [PROBLEMS] A high film forming rate can be realized by using a horn stream gas introduction guide, and a throughput is improved.
Provided is a CVD apparatus which is industrially practical and highly productive. SOLUTION: A vacuum vessel 12 provided with an exhaust system 11, a substrate holder 14, a heating mechanism 15 for heating the substrate 13, and a source gas supply system 30 for supplying a source gas via a gas introduction pipe 19 are provided. Further, a gas introduction guide 16 arranged in the front space of the substrate, comprising a gas supply outlet 18 facing the film forming surface of the substrate, and further having an opening area of the gas supply outlet gradually increasing as approaching the substrate. And the temperature of the gas introduction guide are set to 60 to 1 during the film forming process.
Temperature control mechanism 41 for controlling the temperature within the range of 70 ° C.
And

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

TECHNICAL FIELD The present invention relates to a CVD apparatus,
In particular, the present invention relates to a CVD apparatus for forming thin films constituting various semiconductor devices, various electronic components, various sensors, and the like by utilizing a chemical reaction of a reactive gas.

[0002]

2. Description of the Related Art In the manufacture of large-scale integrated circuits (LSI), liquid crystal displays (LCD), and the like, there is a process of forming a thin film on the surface of a substrate. In the production of this thin film, a CVD film forming method for forming a film using a chemical reaction of a reactive gas is widely used.

FIG. 3 shows a typical conventional CVD apparatus.
This CVD apparatus includes a vacuum vessel 72 having an exhaust system 71.
And a substrate holder 74 for holding the substrate 73 at a predetermined position in the vacuum vessel 72, a heating mechanism 75 for heating the substrate 73 to a predetermined temperature, and supplying a source gas to the heated surface of the substrate 73 (film formation surface). A source gas supply system 80 is provided. The thin film is formed on the surface of the substrate 73 by using a chemical reaction of a source gas supplied to or near the surface of the substrate 73.

In recent film formation of metal materials, CVD film formation using an organic metal compound or an organic metal complex which is liquid at normal temperature and normal pressure as a raw material has been actively studied. For example, in the field of metal materials for wiring, copper (Cu) having high migration resistance and low specific resistance is regarded as a promising next-generation wiring material. In the CVD film formation of Cu, for example, copper [trimethylvinylsilyl] hexafluoroacetylacetonate (hereinafter referred to as “Cu (hfac) (tmv
An organic metal complex which is liquid at normal temperature and normal pressure such as s)) is used. In the above-described CVD apparatus, it is assumed that such a liquid material is used.

Therefore, the source gas supply system 8 of the above-mentioned CVD apparatus
0 is a raw material container 81 for storing a liquid raw material;
A vaporizer 82 for vaporizing the liquid raw material sent from the gas generator 82, a gas introduction pipe 83 for sending the raw material gas vaporized by the vaporizer 82 to the vacuum vessel 72, and a shower head 84 connected to the end of the gas introduction pipe 83. ing. The shower head 84 is a disc-shaped member having an internal space 84a communicating with the gas introduction pipe 83. This shower head 84
A large number of gas blowout holes 84b are provided on the front surface facing the substrate 73 held on the substrate holder 74.
The raw material gas is blown out of the vacuum chamber 72 to introduce the raw material gas into the vacuum vessel 72. The source gas supply system 80 is connected to a pipe 85 for introducing a carrier gas mixed with the source gas in order to efficiently guide the source gas to the vacuum vessel 72. Further, the heating mechanism 75 heats the substrate to a predetermined temperature in order to cause a predetermined chemical reaction on the surface of the substrate 73. Further, a heater 76 for preventing liquefaction of the source gas is provided on the outer wall surface of the vacuum vessel 72.

In the above CVD apparatus, Cu (hf
A film of copper is formed on the surface of the substrate 73 by using ac) (tmvs). With the substrate 73 placed on the substrate holder 74, the substrate 73 is heated to a temperature of about 100 to 300 ° C. by the heating mechanism 75. In this state, Cu (hfac) (t
mvs) is vaporized by a vaporizer 82, and hydrogen gas is mixed as a carrier gas to form a gas outlet 8 of a shower head 84.
4b, and introduced into the vacuum vessel 72. The introduced source gas reaches the substrate 73, a predetermined reaction including decomposition occurs by heat, and a Cu film is deposited on the surface of the substrate 73. In the conventional configuration in which the raw material gas is blown out from the shower head 84, the raw material gas is uniformly supplied to the substrate 73 by appropriately arranging the gas blowing holes 84b. For this reason, this configuration is favorable in terms of uniformity of film formation (uniformity of film formation rate and uniformity of film quality).

[0007]

However, according to the conventional CVD apparatus using the shower head 84, the vaporizer 8 is not used.
2. It is difficult to increase the vaporization efficiency of
There has been a problem that the supply amount of the precursor cannot be increased, and it is difficult to improve the film forming speed.

Accordingly, the present applicant has previously proposed a CVD apparatus that does not use a shower head (Japanese Patent Application No. Hei 8-23151).
No. 3, filed on August 13, 1996). In this CVD apparatus, instead of the shower head 84, a gas rectification unit connected to a gas introduction pipe at a gas introduction port located at the center and facing the surface of the substrate is provided in the front space of the substrate. Is provided with a gas introduction guide having the gas rectifying portion formed so that the gas rectification portion is formed so as to gradually increase as approaching the substrate (or so as to gradually decrease the distance from the center to the peripheral portion with respect to the substrate). The form of this gas introduction guide was introduced as a horn stream structure at the Japan Society of Applied Physics in the spring of 1997. According to this CVD apparatus, the above problem can be solved. However, in the above-mentioned CVD apparatus, the film forming rate in a state where the uniformity of the film forming rate is maintained as good as 3% or less in a 1σ distribution is about 80 nm / min.
Met. In order to use a CVD apparatus industrially, it is required to realize a high film forming rate of 100 nm / min or more in order to improve the throughput, and the above-mentioned CVD apparatus has a problem that it cannot satisfy this requirement.

[0009] CVD using the above gas introduction guide
In the apparatus, for example, a film adheres to the surface of the gas introduction guide as the film formation process proceeds in a single wafer system. In particular, when a structure for increasing the film forming speed is employed, the film tends to be more attached to the gas introduction guide. When the film is peeled, the performance of the thin film on the substrate may be deteriorated. Therefore, a cleaning step for removing the attached matter is required.

SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems, and it is possible to realize a high film forming rate by using a horn stream gas introduction guide, thereby achieving a high film forming rate, improving a throughput, and industrially. An object of the present invention is to provide a CVD apparatus having high practicality and high productivity.

Another object of the present invention is to provide a CVD apparatus capable of appropriately and efficiently removing deposits on a gas introduction guide in a film forming step of a CVD apparatus using a horn stream gas introduction guide. .

[0012]

The CVD apparatus according to the present invention is configured as follows to achieve the above object.

The first CVD apparatus (corresponding to claim 1) comprises:
A vacuum vessel equipped with an exhaust system, a substrate holder for holding the substrate in the vacuum vessel, a heating mechanism for heating the substrate, and a source gas supplied to the film formation surface of the substrate via a gas introduction pipe into the vacuum vessel. A source gas supply system is provided for forming a thin film on the deposition surface by chemically reacting the source gas in the vicinity of the deposition surface of the substrate, and further has a gas rectification unit located in the front space of the substrate. A gas introduction guide, wherein the gas rectifying section is formed such that a gas introduction port connected to a gas introduction pipe is formed at a central portion thereof and an opening area thereof is gradually increased as approaching a substrate. The temperature of the guide and the gas introduction guide is set to 60 to 1 during the film forming process.
A temperature control mechanism for controlling the temperature within a range of 70 ° C. By controlling the temperature of the gas introduction guide within such a temperature range, the film formation speed on the substrate can be improved.

The second CVD apparatus (corresponding to claim 2) is
In the first configuration, the temperature of the gas introduction guide is 90.
It is characterized by being included in the range of -150 ° C. According to this temperature, a higher effect can be expected.

[0015] A third CVD apparatus (corresponding to claim 3) comprises:
In the above-described first configuration, a cleaning step for removing deposits on the gas introduction guide is performed in the course of the film formation step by the single-wafer type film formation processing. During this cleaning step, the temperature control mechanism controls the temperature of the gas introduction guide. 170-3
The temperature is controlled within the range of 50 ° C. When the temperature of the gas introduction guide is controlled to the above-described temperature during the film forming process, deposits are formed on the surface of the gas introduction guide. Therefore, after the deposition of a predetermined number of substrates is completed, a cleaning step is performed to remove the deposits on the gas introduction guide. In the cleaning step, it is preferable that the temperature of the gas introduction guide is controlled within the above-mentioned temperature range in order to enhance the cleaning effect.

A fourth CVD apparatus (corresponding to claim 4) is:
It has the same configuration as the first CVD apparatus described above, and is particularly configured to control the temperature of the gas introduction guide to a temperature included in the range of 60 to 350 ° C. by the temperature control mechanism. In the first CVD apparatus,
Although the invention was grasped and expressed from the viewpoint of the film forming process, in the fourth CVD apparatus, the invention was grasped by the same temperature control mechanism in the contents of the temperature control in each of the film forming process and the cleaning process. ing.

A fifth CVD apparatus (corresponding to claim 5) comprises:
In the fourth configuration, a film forming step by single-wafer processing and a cleaning step for removing the deposits on the gas introduction guide included in the middle of the film forming step are performed. When performing, the temperature of the gas introduction guide is controlled to a temperature included in the range of 90 to 150 ° C.,
When the cleaning step is performed, the temperature of the gas introduction guide is controlled to a temperature included in the range of 170 to 350 ° C.

A sixth CVD apparatus (corresponding to claim 6) comprises:
In the first or fourth configuration, preferably, at the time of the film formation step, the source gas is an organometallic complex of copper or a mixture containing this substance as a main component, and the thin film to be formed is copper.

A seventh CVD apparatus (corresponding to claim 7) is:
In the sixth configuration, the raw material gas is preferably copper [tritylvinylsilyl] hexafluoroacetylacetonate or a mixture containing this substance as a main component.

[0020]

Preferred embodiments of the present invention will be described below with reference to the accompanying drawings.

FIG. 1 shows a typical embodiment of a CVD apparatus according to the present invention. FIG. 2 shows a gas introduction guide (horn stream) as a main part thereof and a mounting mechanism thereof in a state where a part thereof is cut away. In FIG. 1, a CVD apparatus includes a vacuum vessel 12 provided with an exhaust system 11, a substrate holder 14 placed at a lower position in the vacuum vessel 12, and holding a substrate 13 to be processed, and a substrate 13 at a predetermined temperature. Heating mechanism 1 for heating
5 and a gas introduction guide 16 installed in the front space of the substrate so as to face the surface (film formation surface) of the substrate 13 on the substrate holder 14 in the vacuum vessel 12. The gas introduction guide 16 has a gas introduction port 17 at an end on the upper wall side of the vacuum vessel 12, and includes a gas rectification unit 18 at a lower portion from the gas introduction port 17. The gas introduction port 17 is located substantially at the center of the gas rectification unit 18 when viewing the gas introduction guide 16 from the substrate 13 side, and is disposed so as to be coaxial with the center of the substrate 13. The gas rectification unit 18 faces the film-forming surface of the substrate 13 and is formed such that the opening area of the gas rectification unit 18 (the area of the opening in the horizontal cross section in FIG. 1) gradually increases as approaching the substrate 13. . In the illustrated example, in the gas introduction guide 16, the portion extending downward from the gas introduction port 17 to the lower end opening is smoothly expanded like a horn of a musical instrument to form the gas rectification section 18. I have. The gas rectifying section 18 can also have its opening area increased stepwise in a stepwise manner. Regarding the above-mentioned horn shape of the gas rectifying portion 18 of the gas introduction guide 16, the distance from the center to the peripheral portion is gradually or stepwise from the center to the peripheral portion in relation to the flow velocity of the gas flowing along the substrate surface. It can also be said that it has a narrowing shape. The configuration and operation of the gas introduction guide 16 will be described in detail in the aforementioned Japanese Patent Application No. 8-231513.

A gas introduction pipe 19 is attached to the upper wall 12a of the vacuum vessel 12. The base end of the gas introduction pipe 19 is
Source gas supply system 3 for supplying a source gas to the surface of substrate 13
The gas inlet 31 is connected to the gas inlet 17 via a gas inlet joint 20. When the source gas is supplied from the source gas supply system 30 to the space in front of the substrate 13 through the gas introduction pipe 19 and the gas introduction guide 16 and the like, the substrate 1 heated by the heating mechanism 15 is heated.
On the surface and near the surface of 3, a chemical reaction is induced by the raw material gas, and a thin film is deposited on the substrate surface.

The vacuum vessel 12 is an airtight vessel made of, for example, stainless steel or an aluminum alloy and having a substrate inlet 21 for introducing the substrate 13 into the vacuum vessel. The vacuum vessel 12 is provided with a temperature control mechanism 22 for maintaining the vacuum vessel 12 at a predetermined temperature as needed. The temperature control mechanism 22 includes a heater 23 and a temperature sensor 24, and a controller (not shown) that adjusts the power supplied to the heater 23 with reference to the detection value of the temperature sensor 24. The temperature control mechanism 22 controls the temperature of the vacuum vessel 12 so that the raw material gas and reaction products supplied by the raw material gas supply system 30 do not dew on the inner wall surface of the vacuum vessel 12 or suppress the chemical reaction. I do. In the present embodiment, the temperature of the vacuum vessel 12 is set to, for example, about 60 ° C. A chiller can be used as the temperature control mechanism 22 to control the temperature with hot water or a heat medium.

Exhaust system 11 for exhausting the inside of vacuum vessel 12
Various vacuum pumps can be used. In the present embodiment, for example, a turbo molecular pump and a dry pump are used in combination. Turbo molecular pumps were used to evacuate to high vacuum in a short time. The dry pump was useful during film formation because the source gas could be exhausted while maintaining a low vacuum of 100 Pa or more when the source gas was introduced into the vacuum vessel 12.

The heating mechanism 15 is for heating the substrate 13 to a temperature required to cause a predetermined chemical reaction. Various mechanisms can be used for the heating mechanism 15. In the present embodiment, the heating mechanism 15 is of a resistance heating type. In addition, a heating method using a lamp can also be used.

The source gas supply system 30 vaporizes the liquid source and supplies the gaseous source to the space in front of the substrate 13. The raw material gas supply system 30 includes a raw material container 32 storing a liquid raw material, and the above-described vaporizer 31 for vaporizing the liquid raw material carried from the raw material container 32. further,
The gas introduction pipe 19 for guiding the raw material vaporized by the vaporizer 31 into the vacuum vessel 12 and the gas introduction guide 16 connected to the gas introduction pipe 19 can also be considered as a part of the raw material gas supply system 30. The raw material container 32 and the vaporizer 31 are connected by a liquid sending pipe 33, and the liquid sending pipe 33 is provided with a liquid flow controller (not shown) for adjusting the flow rate of the raw material.

In this embodiment, the vaporizer 31 is a commercially available vaporizer for vaporizing a liquid material (for example, a Lintec vaporizer).
It was used. In addition, a pipe 34 for introducing a carrier gas such as hydrogen gas, helium gas, or nitrogen gas into the vaporizer 31.
Is attached. The pipe 34 is provided with a carrier gas flow rate regulator (not shown) for adjusting the flow rate of the carrier gas. The vaporizer 31 has a structure capable of mixing a source gas and a carrier gas. As described above, the gas introduction pipe 19 for introducing the vaporized raw material and the carrier gas into the vacuum vessel is connected to the vaporizer 31.

Further, the vaporizer 31 is provided with a temperature control mechanism 35 for controlling the temperature thereof to a predetermined temperature, and the pipe 34 is provided with a temperature control mechanism 36 for controlling the temperature thereof to a predetermined temperature. Is provided with a temperature control mechanism 37 for controlling the temperature to a predetermined temperature. In the present embodiment, the temperatures of the vaporizer 31, the pipe 34, and the gas introduction pipe 37 are maintained at, for example, about 50 ° C.

The gas introduction guide 16 is provided with a guide temperature control mechanism 41 for appropriately controlling the temperature. Further, a gas introduction guide mounting mechanism 42 for supporting and fixing the gas introduction guide 16 at a predetermined position in the vacuum vessel 12 is arranged around the gas introduction guide 16.

The guide temperature control mechanism 41 is a mechanism for controlling the temperature of the gas introduction guide 16 to a temperature included in a range from about 60 ° C. to about 350 ° C. In the vacuum chamber 12, as described later, for example, a substrate film forming process of a single wafer type and a cleaning process performed at an appropriate timing during the film forming process are performed. Must be controlled to an appropriate temperature. The guide temperature control mechanism 41 includes a heater 43 provided, for example, in contact with the back surface of the gas introduction guide 16 facing the substrate 13, and a coolant flow passage 44 for cooling the gas introduction guide, provided in contact with the back surface. A temperature sensor 45 for detecting the temperature of the gas introduction guide 16, and a controller (not shown) for controlling the heating amount of the heater 43 and the temperature and flow rate of the refrigerant flowing through the refrigerant flow passage 44 based on a signal from the temperature sensor 45. It is composed of

The gas introduction guide mounting mechanism 42 is an annular plate made of, for example, alumina, and extends from the lower peripheral portion of the gas introduction guide 16 so as to be parallel to the substrate 13.
The outer peripheral edge is attached to the inner surface of the vacuum vessel 12. The gas introduction guide mounting mechanism 42 includes a temperature control mechanism 46 for maintaining the same temperature as the vacuum vessel 12. The temperature control mechanism 46 includes a heater 47 for heating the gas introduction guide attachment mechanism 42, a refrigerant flow passage 48 for flowing a refrigerant for cooling the gas introduction guide attachment mechanism 42, and a temperature for measuring the temperature of the gas introduction guide attachment mechanism 42. Sensor 49
And a controller (not shown) for controlling the heating amount of the heater 47 and the temperature and flow rate of the refrigerant flowing through the refrigerant flow passage 48 based on the detection signal of the temperature sensor 49.

The material of the gas introduction guide mounting mechanism 42 is not limited to alumina, and the gas introduction guide 16 and the vacuum vessel 12
Any material can be used as long as it suppresses heat conduction to the substrate. For example, a metal oxide having lower thermal conductivity than a metal such as copper, or a resin having excellent heat resistance and low thermal conductivity can be used. In particular, it is preferable to use a resin material such as Vespel for the joint with the vacuum vessel 12. Reducing the area in contact with the gas introduction guide 16 is also effective for suppressing heat conduction from the gas introduction guide 16 to the vacuum vessel 12.

The gas inlet joint 20 provided at the gas inlet 17 is preferably made of a resin having excellent heat resistance and low thermal conductivity, and is connected to the gas inlet pipe 19 and the vacuum vessel 12 from the gas inlet guide 16. Has the effect of suppressing the conduction of heat.

Next, the overall operation of the CVD apparatus having the above structure will be described. The substrate 13 is carried into the vacuum vessel 12 through the substrate inlet 21 and is placed on the upper surface of the substrate holder 14. The vacuum vessel 12 is 1 × 10 ⁻³ P by the exhaust system 11.
It is exhausted below a. The heating mechanism 15 operates in advance, and when the substrate 13 is placed on the substrate holder 14, the substrate 13 is preferably heated to 200 ° C. When the guide temperature control mechanism 41 operates in advance, the gas introduction guide 16 is preferably 60 to 1
The temperature is controlled within the range of 50 ° C. The gas introduction pipe 19 is controlled by a temperature control mechanism 37, the pipe 34 is controlled by a temperature control mechanism 36, and the vaporizer 31 is controlled by a degree control mechanism 35.
, Respectively, the temperature is controlled, for example, to 50 ° C. Similarly, the vacuum container 12 is controlled by the temperature control mechanism 22.
The temperature of the gas introduction guide mounting mechanism 42 is controlled to, for example, 50 ° C. by the temperature control mechanism 46. The temperature of each part controlled as described above is a temperature condition in a film forming process for forming a CVD film on the substrate 13.

Next, a method for forming a Cu film on the substrate 13 will be described. A copper organometallic complex is used as a raw material.
In this embodiment, Cu (hfa) is used as the organometallic complex of copper.
c) (tmvs) or a mixture based on this (tmvs) was used.

After the temperature of the substrate 13 is stabilized at 200 ° C.,
0.4g / min flow rate by liquid flow controller not shown
Cu (hfac) (tmvs) is introduced from the raw material container 32 into the vaporizer 31 through the liquid supply pipe 33. Cu (hfac) (tmvs) is vaporized by the vaporizer 31. Cu (hfac) (tmvs) is vaporized 31
And at the same time 300 sc hydrogen as carrier gas
cm is introduced into the vaporizer 31 through the pipe 34 and mixed with the vaporized Cu (hfac) (tmvs). The mixed Cu (hfac) (tmvs) and hydrogen are supplied to the surface of the substrate 13 from the gas rectification unit 18 through the gas introduction pipe 19, the gas introduction port 17, and the gas introduction guide 16. At this time, the pressure in the vacuum vessel 12 is 1 × 10 ³ by the exhaust system 11.
It is held at Pa. In the space in front of the substrate 13, Cu (hfa
c) As a result of supplying (tmvs) and hydrogen, a thin film containing Cu as a main component is deposited on the surface of the substrate 13 by the CVD method.

In the above film forming process, the film forming speed on the surface of the substrate 13 is 100 nm when the temperature of the gas introduction guide 16 is controlled to 60 ° C. by the guide temperature control mechanism 41.
/ min. When the temperature of the gas introduction guide 16 was controlled further higher, the film formation rate on the surface of the substrate 13 was further increased. For example, if the temperature of the gas introduction guide 16 is 90 to 15
When controlled at a constant temperature between 0 ° C., a high film formation rate of 150 nm / min or more could be obtained. However, as the temperature of the gas introduction guide 16 becomes higher than 150 ° C.,
The deposition rate of the thin film mainly composed of Cu on the substrate facing surface 16a of the gas introduction guide 16 is increased, the use efficiency of the raw material is reduced, and the deposition cost is increased. In addition, the film forming speed on the surface of the substrate 13 is also reduced. Further, the maintenance cycle for removing the film (adhered matter) adhered to the gas introduction guide 16 also becomes shorter as the temperature of the gas introduction guide 16 increases. For this reason, in the present embodiment, it is possible to provide the guide temperature control mechanism 41 for controlling the temperature of the gas introduction guide 16 in the temperature range of 60 to 170 ° C., more preferably in the temperature range of 90 to 150 ° C. It was very beneficial to increase speed and lengthen the maintenance cycle.

Thereafter, the above-described film forming operation is repeated for each substrate by replacing the substrates, and a number of film forming steps are repeated to form a thin film on a number of substrates. Opposite surface 1 of gas introduction guide 16
The amount of the deposit attached to 6a increases in proportion to the number of substrates on which a film is formed.

Therefore, a cleaning step for removing the deposits on the gas introduction guide 16 is performed at an appropriate timing. Here, the cleaning step will be described. In the cleaning step, the temperature of the gas introduction guide 16 is set to, for example, 200 ° C. by the guide temperature control mechanism 41. Further, the inside of the vacuum vessel 12 is evacuated to 1 × 10 ⁻³ Pa or less by the exhaust system 11. Next, oxygen gas, for example, 20 sccm and hexafluoroacetylacetone gas, for example, 10 sccm,
And into the vacuum vessel 12 through the gas inlet 17 and the like, and the pressure in the vacuum vessel 12 is reduced to 10 Pa by the exhaust system 11.
To hold. The deposits on the gas introduction guide 16 are oxidized by oxygen, gradually complexed with hexafluoroacetylacetone gas to become Cu (hfac) ² , and exhausted by the exhaust system 11. After all the deposits on the gas introduction guide 16 are exhausted as Cu (hfac) ² , the introduction of the oxygen gas and the hexafluoroacetylacetone gas is stopped, and the pressure in the vacuum vessel 12 is reduced to 1 × 10 ⁻³ P.
The operation is terminated when the value is equal to or less than a. In the above cleaning process, the film adhered to the gas introduction guide 16 can be sufficiently removed. In the present embodiment, the deposit can be removed within 10 minutes.

When the temperature of the gas introduction guide 16 is set to 170 ° C. or higher by the guide temperature control mechanism 41, it is possible to remove deposits. As the temperature of the gas introduction guide 16 was increased, the rate of removing the deposits increased.
Until the temperature of the gas introduction guide 16 reached 350 ° C., the rate of removal of deposits continuously increased. Gas introduction guide 1
When the temperature of No. 6 exceeded 350 ° C., the gas introduction guide 16 was deformed. Therefore, the temperature of the gas introduction guide 16 in the cleaning step is preferably controlled to a temperature in the range of 170 to 350 ° C.

After the completion of the cleaning process, the process returns to the film forming process. In moving to the film forming process, the temperature of the gas introduction guide 16 and the like is controlled to the above-described temperature.

As described above, when the CVD apparatus having the above-described structure is used, the deposits adhered to the gas introduction guide 16 can be removed by controlling the temperature of the gas introduction guide 16 without opening the vacuum vessel 12 to the atmosphere. , Maintenance is easy, and a throughput approximately twice that of the conventional one can be obtained, which is extremely useful in industry.

Note that the temperature of the substrate 13 is not limited to 200 ° C., and the same effect is obtained when the temperature is lower than 200 ° C. or higher than 200 ° C.

Although the above-described embodiment has a single-wafer-type apparatus configuration, the present invention can be similarly applied to a case where a plurality of substrates are simultaneously formed into a film. Also in this case, the cleaning step is performed at an appropriate timing during the film forming step.

In the above embodiment, Cu (hfac) (t
mvs) or a mixture containing the same as a main component, Cu (hfac) (atms), Cu (hfa)
c) Other organic metal complexes such as (cod) and Cu (hfac) (3-hex) are similarly effective.

[0046]

As is apparent from the above description, according to the present invention, a substrate is formed by a CVD apparatus utilizing a chemical reaction of a reactive gas, and a horn stream gas introduction guide is provided in the front space of the substrate. To increase the film deposition rate,
Further, since the temperature of the gas introduction guide is controlled so as to be included in the predetermined temperature range, the film forming speed can be further increased, the throughput can be greatly improved, and industrially practical one can be obtained. In addition, since the temperature of the gas introduction guide is controlled from the viewpoint of improving the throughput during the film forming process, a cleaning process for removing the deposits on the gas introduction guide at an appropriate timing during the film forming process is performed. I did it. Also in this cleaning step, the temperature of the gas introduction guide is controlled so as to be in an optimum state for cleaning, and the cleaning can be efficiently performed in a short time.

[Brief description of the drawings]

FIG. 1 is a longitudinal sectional view schematically showing a typical embodiment of a CVD apparatus according to the present invention.

FIG. 2 is a perspective view in which a part of a main part of the CVD apparatus shown in FIG. 1 is cut away.

FIG. 3 is a longitudinal sectional view showing a typical configuration of a conventional CVD apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 12 Vacuum container 13 Substrate 14 Substrate holder 15 Heating mechanism 16 Gas introduction guide 17 Gas introduction port 18 Gas rectification part 19 Gas introduction pipe 30 Source gas supply system 41 Guide temperature control mechanism 42 Gas introduction guide mounting mechanism

Claims (7)

[Claims] 1. A vacuum vessel provided with an exhaust system, a substrate holder for holding a substrate in the vacuum vessel, heating means for heating the substrate, and the substrate via a gas introduction pipe into the vacuum vessel. A CVD apparatus for providing a source gas supply system for supplying a source gas to a film formation surface of the substrate, and forming a thin film on the film formation surface by chemically reacting the source gas near the film formation surface of the substrate; Is a gas introduction guide having a gas rectification portion located in the gas rectification portion, the gas introduction port connected to the gas introduction pipe is formed in the center thereof, and the opening area thereof as it approaches the substrate, The gas introduction guide formed so as to be gradually increased, and the temperature of the gas introduction guide is set to 60 to 1 during the film forming process.
And a temperature control mechanism for controlling the temperature to be within the range of 70 ° C. 2. The temperature of said gas introduction guide is 90-15.
The CVD apparatus according to claim 1, wherein the temperature is within a range of 0 ° C. 3. A cleaning step for removing deposits on the gas introduction guide is performed in the course of a film forming step by a single-wafer type film forming process, and in the cleaning step, the temperature control mechanism controls the temperature of the gas introduction guide. From 170 to 3
2. The CVD apparatus according to claim 1, wherein the temperature is controlled to be in a range of 50 [deg.] C. 4. A vacuum vessel provided with an exhaust system, a substrate holder for holding a substrate in the vacuum vessel, heating means for heating the substrate, and the substrate via a gas introduction pipe into the vacuum vessel. A CVD apparatus for providing a source gas supply system for supplying a source gas to a film formation surface of the substrate, and forming a thin film on the film formation surface by chemically reacting the source gas near the film formation surface of the substrate; Is a gas introduction guide having a gas rectification portion located in the gas rectification portion, the gas introduction port connected to the gas introduction pipe is formed in the center thereof, and the opening area thereof as it approaches the substrate, A CVD apparatus, comprising: a gas introduction guide formed so as to be gradually larger; and a temperature control mechanism for controlling a temperature of the gas introduction guide to a temperature included in a range of 60 to 350 ° C. . 5. A film forming process by a single-wafer type film forming process and a cleaning process for removing a deposit on the gas introduction guide included in the middle of the film forming process are performed. When performing the film forming step, the temperature of the gas introduction guide is controlled to a temperature included in the range of 90 to 150 ° C., and when performing the cleaning step, the temperature of the gas introduction guide is controlled in the range of 170 to 350 ° C. 5. The method according to claim 4, wherein the temperature is controlled to be included in the temperature.
The CVD apparatus as described in the above. 6. The method according to claim 1, wherein in the film forming step, the raw material gas is an organometallic complex of copper or a mixture containing this substance as a main component, and the thin film to be formed is copper. CVD equipment. 7. The CVD apparatus according to claim 6, wherein the raw material gas is copper [tritylvinylsilyl] hexafluoroacetylacetonate or a mixture containing this substance as a main component.