JP4464607B2 - マイクロ電気機械システム（ｍｅｍｓ）装置 - Google Patents
マイクロ電気機械システム（ｍｅｍｓ）装置 Download PDFInfo
- Publication number
- JP4464607B2 JP4464607B2 JP2002566525A JP2002566525A JP4464607B2 JP 4464607 B2 JP4464607 B2 JP 4464607B2 JP 2002566525 A JP2002566525 A JP 2002566525A JP 2002566525 A JP2002566525 A JP 2002566525A JP 4464607 B2 JP4464607 B2 JP 4464607B2
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- JP
- Japan
- Prior art keywords
- over arm
- isolator
- millet
- mems
- arm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000033001 locomotion Effects 0.000 claims abstract description 78
- 238000000034 method Methods 0.000 claims abstract description 51
- 238000002955 isolation Methods 0.000 claims abstract description 23
- 239000003990 capacitor Substances 0.000 claims description 161
- 239000000758 substrate Substances 0.000 claims description 123
- 230000007246 mechanism Effects 0.000 claims description 81
- 230000003287 optical effect Effects 0.000 claims description 38
- 238000006073 displacement reaction Methods 0.000 claims description 35
- 238000012545 processing Methods 0.000 claims description 26
- 238000000926 separation method Methods 0.000 claims description 18
- 239000000615 nonconductor Substances 0.000 claims description 14
- 230000001419 dependent effect Effects 0.000 claims description 12
- 239000007787 solid Substances 0.000 claims description 3
- 244000062793 Sorghum vulgare Species 0.000 claims 116
- 235000019713 millet Nutrition 0.000 claims 116
- 238000004587 chromatography analysis Methods 0.000 claims 7
- 239000003989 dielectric material Substances 0.000 claims 3
- 230000001133 acceleration Effects 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 230000008901 benefit Effects 0.000 abstract description 5
- 230000008569 process Effects 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 101100460147 Sarcophaga bullata NEMS gene Proteins 0.000 abstract 1
- 210000000707 wrist Anatomy 0.000 description 31
- 238000005452 bending Methods 0.000 description 27
- 230000000694 effects Effects 0.000 description 13
- 239000000463 material Substances 0.000 description 13
- 230000009471 action Effects 0.000 description 12
- 230000006870 function Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 9
- 238000004891 communication Methods 0.000 description 9
- 230000008878 coupling Effects 0.000 description 9
- 238000010168 coupling process Methods 0.000 description 9
- 238000005859 coupling reaction Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 9
- 230000002829 reductive effect Effects 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 238000009413 insulation Methods 0.000 description 8
- 230000036961 partial effect Effects 0.000 description 8
- 230000002457 bidirectional effect Effects 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 230000001965 increasing effect Effects 0.000 description 7
- 230000001939 inductive effect Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 230000004907 flux Effects 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 230000003993 interaction Effects 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000003321 amplification Effects 0.000 description 3
- 230000000712 assembly Effects 0.000 description 3
- 238000000429 assembly Methods 0.000 description 3
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000005672 electromagnetic field Effects 0.000 description 3
- 238000010348 incorporation Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000008054 signal transmission Effects 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000002730 additional effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 230000003278 mimic effect Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
- H02N1/002—Electrostatic motors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
- H01G5/04—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of effective area of electrode
- H01G5/14—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of effective area of electrode due to longitudinal movement of electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Micromachines (AREA)
- Gyroscopes (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/788,928 US6583374B2 (en) | 2001-02-20 | 2001-02-20 | Microelectromechanical system (MEMS) digital electrical isolator |
| US09/804,817 US6798312B1 (en) | 1999-09-21 | 2001-03-13 | Microelectromechanical system (MEMS) analog electrical isolator |
| US09/805,410 US6617750B2 (en) | 1999-09-21 | 2001-03-13 | Microelectricalmechanical system (MEMS) electrical isolator with reduced sensitivity to inertial noise |
| US10/001,412 US6803755B2 (en) | 1999-09-21 | 2001-10-25 | Microelectromechanical system (MEMS) with improved beam suspension |
| PCT/US2002/004824 WO2002067293A2 (fr) | 2001-02-20 | 2002-02-20 | Dispositif a systeme micro-electromecanique (mems) |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008216879A Division JP2009066750A (ja) | 2001-02-20 | 2008-08-26 | マイクロ電気機械システム（ｍｅｍｓ）装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005503267A JP2005503267A (ja) | 2005-02-03 |
| JP2005503267A5 JP2005503267A5 (fr) | 2007-07-05 |
| JP4464607B2 true JP4464607B2 (ja) | 2010-05-19 |
Family
ID=27485089
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002566525A Expired - Fee Related JP4464607B2 (ja) | 2001-02-20 | 2002-02-20 | マイクロ電気機械システム（ｍｅｍｓ）装置 |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP1386347A4 (fr) |
| JP (1) | JP4464607B2 (fr) |
| AU (1) | AU2002255563A1 (fr) |
| WO (1) | WO2002067293A2 (fr) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6690178B2 (en) * | 2001-10-26 | 2004-02-10 | Rockwell Automation Technologies, Inc. | On-board microelectromechanical system (MEMS) sensing device for power semiconductors |
| JP4643192B2 (ja) * | 2004-07-16 | 2011-03-02 | アオイ電子株式会社 | グリッパ |
| US7205867B2 (en) * | 2005-05-19 | 2007-04-17 | Robert Bosch Gmbh | Microelectromechanical resonator structure, and method of designing, operating and using same |
| US7227432B2 (en) * | 2005-06-30 | 2007-06-05 | Robert Bosch Gmbh | MEMS resonator array structure and method of operating and using same |
| CN120185330B (zh) * | 2025-05-22 | 2025-08-19 | 启元实验室 | 集成磁传感器的电磁mems执行器的位移控制系统及制备方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5025346A (en) * | 1989-02-17 | 1991-06-18 | Regents Of The University Of California | Laterally driven resonant microstructures |
| US5359893A (en) * | 1991-12-19 | 1994-11-01 | Motorola, Inc. | Multi-axes gyroscope |
| US5536988A (en) * | 1993-06-01 | 1996-07-16 | Cornell Research Foundation, Inc. | Compound stage MEM actuator suspended for multidimensional motion |
| US5739686A (en) * | 1996-04-30 | 1998-04-14 | Naughton; Michael J. | Electrically insulating cantilever magnetometer with mutually isolated and integrated thermometry, background elimination and null detection |
| US5959516A (en) * | 1998-01-08 | 1999-09-28 | Rockwell Science Center, Llc | Tunable-trimmable micro electro mechanical system (MEMS) capacitor |
| KR100252009B1 (ko) * | 1997-09-25 | 2000-04-15 | 윤종용 | 마이크로 진동구조물과 그 공진주파수 조절방법 및 이를 이용한 마이크로 엑츄에이터 |
| US6060336A (en) * | 1998-12-11 | 2000-05-09 | C.F. Wan Incorporated | Micro-electro mechanical device made from mono-crystalline silicon and method of manufacture therefore |
| JP4126833B2 (ja) * | 1999-03-12 | 2008-07-30 | 株式会社デンソー | 角速度センサ装置 |
| US6094102A (en) * | 1999-04-30 | 2000-07-25 | Rockwell Science Center, Llc | Frequency synthesizer using micro electro mechanical systems (MEMS) technology and method |
| US6384353B1 (en) * | 2000-02-01 | 2002-05-07 | Motorola, Inc. | Micro-electromechanical system device |
| US6307169B1 (en) * | 2000-02-01 | 2001-10-23 | Motorola Inc. | Micro-electromechanical switch |
-
2002
- 2002-02-20 JP JP2002566525A patent/JP4464607B2/ja not_active Expired - Fee Related
- 2002-02-20 AU AU2002255563A patent/AU2002255563A1/en not_active Abandoned
- 2002-02-20 EP EP02724965A patent/EP1386347A4/fr not_active Withdrawn
- 2002-02-20 WO PCT/US2002/004824 patent/WO2002067293A2/fr not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2002067293A3 (fr) | 2003-11-27 |
| EP1386347A4 (fr) | 2005-05-25 |
| JP2005503267A (ja) | 2005-02-03 |
| EP1386347A2 (fr) | 2004-02-04 |
| AU2002255563A1 (en) | 2002-09-04 |
| WO2002067293A2 (fr) | 2002-08-29 |
| WO2002067293A9 (fr) | 2004-04-01 |
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