[go: up one dir, main page]

JP2020088031A - Power supply for laser device - Google Patents

Power supply for laser device Download PDF

Info

Publication number
JP2020088031A
JP2020088031A JP2018216527A JP2018216527A JP2020088031A JP 2020088031 A JP2020088031 A JP 2020088031A JP 2018216527 A JP2018216527 A JP 2018216527A JP 2018216527 A JP2018216527 A JP 2018216527A JP 2020088031 A JP2020088031 A JP 2020088031A
Authority
JP
Japan
Prior art keywords
power supply
abnormality
circuit
overvoltage
high frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2018216527A
Other languages
Japanese (ja)
Inventor
英正 山口
Hidemasa Yamaguchi
英正 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Heavy Industries Ltd
Original Assignee
Sumitomo Heavy Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Heavy Industries Ltd filed Critical Sumitomo Heavy Industries Ltd
Priority to JP2018216527A priority Critical patent/JP2020088031A/en
Priority to KR1020190127041A priority patent/KR20200058283A/en
Priority to TW108137172A priority patent/TWI733215B/en
Priority to CN201910987814.1A priority patent/CN111200354A/en
Publication of JP2020088031A publication Critical patent/JP2020088031A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/32Means for protecting converters other than automatic disconnection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09Processes or apparatus for excitation, e.g. pumping
    • H01S3/097Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser
    • H01S3/09702Details of the driver electronics and electric discharge circuits
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/0014Monitoring arrangements not otherwise provided for
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M5/00Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases
    • H02M5/02Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into DC
    • H02M5/04Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into DC by static converters
    • H02M5/10Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into DC by static converters using transformers
    • H02M5/16Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into DC by static converters using transformers for conversion of frequency
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/0003Details of control, feedback or regulation circuits
    • H02M1/0038Circuits or arrangements for suppressing, e.g. by masking incorrect turn-on or turn-off signals, e.g. due to current spikes in current mode control

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Lasers (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)

Abstract

【課題】信頼性を高めたレーザ装置を提供する。
【解決手段】高周波電源400は、一対の放電電極202,204の容量を含む共振回路210に高周波電圧VRFを印加する。過電圧抑制回路500は、共振回路210の両端間の過電圧を抑制する。異常検出器600は、異常を検出すると高周波電源400からの高周波電圧VRFの印加を停止させる。
【選択図】図2
PROBLEM TO BE SOLVED: To provide a laser device having improved reliability.
A high frequency power supply applies a high frequency voltage V RF to a resonance circuit including a capacitance of a pair of discharge electrodes. The overvoltage suppressing circuit 500 suppresses an overvoltage between both ends of the resonance circuit 210. The abnormality detector 600 stops the application of the high frequency voltage V RF from the high frequency power supply 400 when detecting the abnormality.
[Selection diagram] Figure 2

Description

本発明は、電源装置に関する。 The present invention relates to a power supply device.

産業用の加工ツールとして、レーザ加工装置が広く普及している。レーザ加工装置には、COレーザなどの高出力のガスレーザが使用される。図1は、レーザ装置100Rのブロック図である。レーザ装置100Rは、レーザ共振器200および電源装置250Rを備える。レーザ共振器200は、一対の放電電極202,204、全反射鏡206、部分反射鏡208を備える。 A laser processing apparatus is widely used as a processing tool for industry. A high output gas laser such as a CO 2 laser is used for the laser processing apparatus. FIG. 1 is a block diagram of the laser device 100R. The laser device 100R includes a laser resonator 200 and a power supply device 250R. The laser resonator 200 includes a pair of discharge electrodes 202 and 204, a total reflection mirror 206, and a partial reflection mirror 208.

一対の放電電極202,204は、COなどのレーザ媒質ガスが充電されたガスチャンバ内に設けられる。一対の放電電極202,204の間には、静電容量Cが存在する。この静電容量Cと、インダクタL(インダクタ素子あるいは寄生インダクタ)は、共振周波数fRESを有する共振回路210を形成する。 The pair of discharge electrodes 202 and 204 are provided in a gas chamber charged with a laser medium gas such as CO 2 . A capacitance C exists between the pair of discharge electrodes 202 and 204. The capacitance C and the inductor L (inductor element or parasitic inductor) form a resonance circuit 210 having a resonance frequency f RES .

電源装置250Rは、高周波電圧VRFを共振回路210に印加する。高周波電圧VRFの周波数fRF(以下、同期周波数という)は、共振回路の周波数fRESの近傍に設定される。高周波電圧VRFが印加されることにより、一対の放電電極202,204の間に放電電流が流れる。放電電流によってレーザ媒質ガスが励起され、反転分布が形成される。誘導放出光は、全反射鏡206と部分反射鏡208が形成する光共振器内を往復し、レーザ媒質ガスを通過することにより増幅される。増幅された光の一部が部分反射鏡208から出力として取り出される。 The power supply device 250R applies the high frequency voltage V RF to the resonance circuit 210. RF voltage V RF frequency f RF (hereinafter, referred to as the synchronization frequency) is set in the vicinity of the frequency f RES of the resonant circuit. By applying the high frequency voltage V RF , a discharge current flows between the pair of discharge electrodes 202 and 204. The discharge medium excites the laser medium gas to form a population inversion. The stimulated emission light reciprocates in the optical resonator formed by the total reflection mirror 206 and the partial reflection mirror 208, and is amplified by passing through the laser medium gas. A part of the amplified light is extracted as an output from the partial reflection mirror 208.

電源装置250Rは、安定化された直流電圧VDCを生成する直流電源300と、直流電圧VDCを高周波電圧VRFに変換する高周波電源400とを備える。 Power supply 250R includes a DC power supply 300 to generate a stabilized DC voltage V DC, and a high frequency power supply 400 for converting the DC voltage V DC to a high frequency voltage V RF.

特開2018−39032号公報JP, 2018-39032, A 特開2015−32746号公報JP, 2015-32746, A

本発明者らは、図1のレーザ装置100Rについて検討した結果、以下の課題を認識するに至った。 As a result of examining the laser device 100R of FIG. 1, the present inventors have come to recognize the following problems.

放電電極202や204において接触不良などが生ずると、開放状態で運転することになる。開放状態では、静電容量Cが非常に小さくなるため、共振回路の共振周波数が非常に高い値fRES’となる。この状態で、同期周波数f(f<fRES’)の高周波電圧Vacを印加し続けると、共振周波数fRES’において、高周波電圧VRFの振幅を超える非常に高電圧が発生する。この高電圧が高周波電源400の内部の半導体素子(すなわちパワートランジスタ)に印加されると、信頼性が低下する。 When a contact failure or the like occurs in the discharge electrodes 202 and 204, the operation is performed in an open state. In the open state, the capacitance C is very small, and the resonance frequency of the resonance circuit has a very high value f RES ′. In this state, if the high frequency voltage V ac having the synchronous frequency f 0 (f 0 <f RES ′) is continuously applied, a very high voltage exceeding the amplitude of the high frequency voltage V RF is generated at the resonance frequency f RES ′. When this high voltage is applied to the semiconductor element (that is, the power transistor) inside the high frequency power supply 400, the reliability decreases.

本発明は係る状況においてなされたものであり、そのある態様の例示的な目的のひとつは、信頼性を高めたレーザ装置の提供にある。 The present invention has been made in such a situation, and one of the exemplary objects of an aspect thereof is to provide a laser device having improved reliability.

本発明のある態様は、一対の放電電極を含むレーザ共振器を駆動する電源装置に関する。電源装置は、一対の放電電極の容量を含む共振回路に高周波電圧を印加する高周波電源と、共振回路の両端間、もしくは高周波電源の内部ノードの過電圧を抑制する過電圧抑制回路と、過電圧抑制回路と直列なスイッチと、異常を検出すると、スイッチをオンする異常検出器と、を備える。 An aspect of the present invention relates to a power supply device that drives a laser resonator including a pair of discharge electrodes. The power supply device includes a high-frequency power supply that applies a high-frequency voltage to a resonance circuit including a pair of discharge electrodes, an overvoltage suppression circuit that suppresses an overvoltage between both ends of the resonance circuit or an internal node of the high-frequency power supply, and an overvoltage suppression circuit. A series switch and an abnormality detector that turns on the switch when an abnormality is detected are provided.

ここでいう「異常」は、電源装置内に過電圧を発生させうる異常である。過電圧抑制回路を設けることで、共振回路の共振周波数が設計値から大きく外れた場合に、過電圧を抑制でき、高周波電源などに含まれる半導体素子を保護できる。また過電圧が生じない状況では、スイッチをオフしておくことで、過電圧抑制回路にリーク電流が流れるのを防止でき、またリーク電流に起因するノイズを抑制できる。 The “abnormality” here is an abnormality that can cause an overvoltage in the power supply device. By providing the overvoltage suppressing circuit, the overvoltage can be suppressed and the semiconductor element included in the high frequency power supply can be protected when the resonance frequency of the resonance circuit largely deviates from the designed value. Further, in a situation where an overvoltage does not occur, by turning off the switch, it is possible to prevent a leak current from flowing through the overvoltage suppressing circuit, and it is possible to suppress noise due to the leak current.

レーザ共振器の筐体はアース線を介して接地されてもよい。異常検出器は、アース線に流れる電流にもとづいて、異常を検出してもよい。 The housing of the laser resonator may be grounded via a ground wire. The abnormality detector may detect the abnormality based on the current flowing through the ground wire.

レーザ共振器の筐体はアース線を介して接地されており、異常検出器は、筐体の電位にもとづいて、異常を検出してもよい。 The casing of the laser resonator is grounded via a ground wire, and the abnormality detector may detect the abnormality based on the potential of the casing.

電源装置は、異常検出器が異常を検出すると、外部に通知する通知手段をさらに備えてもよい。 The power supply device may further include notifying means for notifying the outside when the abnormality detector detects an abnormality.

高周波電源は、インバータと、インバータの出力と接続される1次巻線およびレーザ共振器と接続される2次巻線を有するトランスと、を含んでもよい。過電圧抑制回路は、トランスの1次巻線と接続されてもよい。 The high frequency power supply may include an inverter and a transformer having a primary winding connected to the output of the inverter and a secondary winding connected to the laser resonator. The overvoltage suppressing circuit may be connected to the primary winding of the transformer.

過電圧抑制回路は、電圧サプレッサ、サージ防護デバイス、ガスアレスタ(サージアレスタ)の少なくともひとつを含んでもよい。 The overvoltage suppression circuit may include at least one of a voltage suppressor, a surge protection device, and a gas arrester (surge arrester).

過電圧抑制回路は、直列に接続される複数の素子を含んでもよい。個々の素子の静電容量が大きい場合に、それらを直列に接続することで、過電圧抑制回路の静電容量を小さくできる。 The overvoltage suppressing circuit may include a plurality of elements connected in series. When the capacitance of each element is large, connecting them in series can reduce the capacitance of the overvoltage suppressing circuit.

過電圧抑制回路は、一対の放電電極の容量の1/10以下のキャパシタを含んでもよい。この場合、キャパシタが負荷となるため、共振周波数が高くなりすぎるのを防止でき、過電圧を抑制できる。 The overvoltage suppression circuit may include a capacitor that is 1/10 or less of the capacitance of the pair of discharge electrodes. In this case, since the capacitor serves as a load, it is possible to prevent the resonance frequency from becoming too high and suppress the overvoltage.

過電圧抑制回路は、LCR負荷を含んでもよい。この場合、放電電極に異常が生じて開放状態となっても、LCR負荷によって共振周波数が高くなりすぎるのを防止でき、過電圧を抑制できる。 The overvoltage suppression circuit may include an LCR load. In this case, even if the discharge electrode becomes abnormal and opens, the resonance frequency can be prevented from becoming too high due to the LCR load, and the overvoltage can be suppressed.

なお、以上の構成要素の任意の組み合わせや本発明の構成要素や表現を、方法、装置、システムなどの間で相互に置換したものもまた、本発明の態様として有効である。 It should be noted that any combination of the above constituent elements and constituent elements and expressions of the present invention that are mutually replaced among methods, devices, systems, etc. are also effective as an aspect of the present invention.

本発明のある態様によれば、レーザ装置の信頼性を高めることができる。 According to an aspect of the present invention, the reliability of the laser device can be increased.

レーザ装置のブロック図である。It is a block diagram of a laser device. 実施の形態に係るレーザ装置のブロック図である。It is a block diagram of a laser device according to an embodiment. 図3(a)、(b)は、異常検出器の構成例を示す回路図である。3A and 3B are circuit diagrams showing a configuration example of the abnormality detector. 図4(a)〜(d)は、過電圧抑制回路の構成例を示す回路図である。4A to 4D are circuit diagrams showing configuration examples of the overvoltage suppressing circuit. 電源装置の具体的な構成例を示す回路図である。It is a circuit diagram which shows the specific structural example of a power supply device. レーザ装置を備えるレーザ加工装置を示す図ある。It is a figure which shows the laser processing apparatus provided with a laser apparatus. 図7(a)、(b)は、過電圧抑制回路の配置の変形例を示す図である。FIGS. 7A and 7B are diagrams showing modified examples of the arrangement of the overvoltage suppressing circuit.

以下、本発明を好適な実施の形態をもとに図面を参照しながら説明する。各図面に示される同一または同等の構成要素、部材、処理には、同一の符号を付するものとし、適宜重複した説明は省略する。また、実施の形態は、発明を限定するものではなく例示であって、実施の形態に記述されるすべての特徴やその組み合わせは、必ずしも発明の本質的なものであるとは限らない。 Hereinafter, the present invention will be described based on preferred embodiments with reference to the drawings. The same or equivalent constituent elements, members, and processes shown in each drawing are denoted by the same reference numerals, and duplicated description will be omitted as appropriate. Further, the embodiments are merely examples and do not limit the invention, and all the features and combinations thereof described in the embodiments are not necessarily essential to the invention.

図2は、実施の形態に係るレーザ装置100のブロック図である。レーザ装置100は、レーザ共振器200と電源装置250を備える。 FIG. 2 is a block diagram of the laser device 100 according to the embodiment. The laser device 100 includes a laser resonator 200 and a power supply device 250.

図2において、レーザ共振器200は等価回路として示される。一対の放電電極202,204の間には、静電容量Cと、抵抗成分Rが含まれる。静電容量Cは、インダクタLとともに共振回路210を形成する。この共振回路210の共振周波数をfRESとする。インダクタLは、インダクタ部品および配線や基板の寄生インダダクタンスの少なくとも一方を含む。 In FIG. 2, the laser resonator 200 is shown as an equivalent circuit. A capacitance C and a resistance component R are included between the pair of discharge electrodes 202 and 204. The capacitance C forms the resonance circuit 210 together with the inductor L. The resonance frequency of the resonance circuit 210 is f RES . The inductor L includes at least one of an inductor component, wiring, and parasitic inductance of a substrate.

電源装置250は、高周波電圧VRFを共振回路210に印加する。高周波電圧VRFの周波数fRF(以下、同期周波数という)は、共振回路の周波数fRESの近傍に設定される。高周波電圧VRFが印加されることにより、一対の放電電極202,204の間に放電電流が流れる。放電電流によってレーザ媒質ガスが励起され、反転分布が形成される。 The power supply device 250 applies the high frequency voltage V RF to the resonance circuit 210. RF voltage V RF frequency f RF (hereinafter, referred to as the synchronization frequency) is set in the vicinity of the frequency f RES of the resonant circuit. By applying the high frequency voltage V RF , a discharge current flows between the pair of discharge electrodes 202 and 204. The laser medium gas is excited by the discharge current, and the population inversion is formed.

電源装置250は、直流電源300、高周波電源400、過電圧抑制回路500、スイッチSW1、異常検出器600、通知手段610を備える。直流電源300は、その出力が一対のDCリンク310と接続されており、DCリンク310に所定の電圧レベルに安定化された直流電圧(DCリンク電圧ともいう)VDCを発生する。 The power supply device 250 includes a DC power supply 300, a high frequency power supply 400, an overvoltage suppressing circuit 500, a switch SW1, an abnormality detector 600, and a notification unit 610. DC power supply 300, whose output is connected to the pair of DC link 310 (also referred to as DC link voltage) stabilized DC voltage to a predetermined voltage level to the DC link 310 to generate V DC.

高周波電源400の入力は、DCリンク310と接続されており、DCリンク電圧VDCを受ける。高周波電源400は、共振周波数fRESと同じ周波数(同期周波数)fRFを有する高周波電圧VRFを発生し、レーザ共振器200に供給する。高周波電源400の構成は限定されないが、直流電圧VDCを交流電圧VACに変換するHブリッジ回路(インバータ)402と、Hブリッジ回路402の出力電圧VACを昇圧するトランス404と、を含むことができる。 The input of the high frequency power supply 400 is connected to the DC link 310 and receives the DC link voltage V DC . The high frequency power supply 400 generates a high frequency voltage V RF having the same frequency (synchronization frequency) f RF as the resonance frequency f RES, and supplies the high frequency voltage V RF to the laser resonator 200. The configuration of the high-frequency power supply 400 is not limited, but includes an H bridge circuit (inverter) 402 that converts the DC voltage V DC into the AC voltage V AC , and a transformer 404 that boosts the output voltage V AC of the H bridge circuit 402. You can

過電圧抑制回路500は、共振回路210の両端間、もしくは高周波電源の内部ノードの過電圧を抑制可能に構成される。図2において、過電圧抑制回路500は、Hブリッジ回路402と昇圧トランス404の接続ノードと接続されており、昇圧トランス404の1次側の電圧の過電圧を抑制可能となっている。 The overvoltage suppressing circuit 500 is configured to suppress an overvoltage between both ends of the resonance circuit 210 or an internal node of the high frequency power supply. In FIG. 2, the overvoltage suppressing circuit 500 is connected to the connection node of the H bridge circuit 402 and the step-up transformer 404, and can suppress the overvoltage of the primary side voltage of the step-up transformer 404.

スイッチSW1は、過電圧抑制回路500の電流経路を遮断するために、過電圧抑制回路500と直列に設けられる。 The switch SW1 is provided in series with the overvoltage suppressing circuit 500 in order to cut off the current path of the overvoltage suppressing circuit 500.

異常検出器600は、レーザ装置100の異常を検出すると、異常検出信号SABNをアサートし、スイッチSW1をオンする。ここでいう「異常」は、電源装置250内に過電圧を発生させうる異常、言い換えれば共振周波数を設計値よりも高くシフトさせる異常であり、たとえば放電電極202,204の接触不良、インダクタLの外れ、それらを接続する配線の外れ、配線の断線(オープン)あるいは劣化によるインピーダンスの増加が例示される。なお電源装置250は、異常が発生した後に異常検出信号SABNをアサートしてもよいし、異常の予兆が現れた段階で異常検出信号SABNをアサートしてもよい。 When the abnormality detector 600 detects an abnormality in the laser device 100, the abnormality detector 600 asserts the abnormality detection signal S ABN and turns on the switch SW1. The "abnormality" referred to here is an abnormality that may cause an overvoltage in the power supply device 250, in other words, an abnormality that shifts the resonance frequency higher than the design value, such as a contact failure between the discharge electrodes 202 and 204 and a disconnection of the inductor L. The disconnection of the wiring connecting them, the disconnection (open) of the wiring, or the deterioration due to the deterioration increases the impedance. Incidentally power device 250, abnormality may assert the abnormality detection signal S ABN after occurrence may assert the abnormality detection signal S ABN with indication of abnormality appeared stage.

通知手段610は、異常検出器600による異常検出を外部に通知する。たとえば通知手段610は、ブザーやランプ、ディスプレイなど、ユーザに対する直接的な通知手段であってもよい。 The notification means 610 notifies the outside of the abnormality detection by the abnormality detector 600. For example, the notification means 610 may be a direct notification means to the user, such as a buzzer, a lamp, or a display.

あるいは通知手段610は、ブザー、ランプ、ディスプレイを制御するシステム側のコントローラと接続されるインタフェースであってもよい。この場合、通知手段610は、ユーザに対して、間接的に異常の発生を通知してもよい。この場合において、システム側のコントローラは、異常発生の通知をトリガーとして、適切なタイミングで適切な保護処置を実行できる。 Alternatively, the notification unit 610 may be an interface connected to a system-side controller that controls a buzzer, a lamp, and a display. In this case, the notification unit 610 may indirectly notify the user of the occurrence of the abnormality. In this case, the controller on the system side can execute an appropriate protective action at an appropriate timing by using the notification of the abnormality occurrence as a trigger.

以上が電源装置250の基本構成である。続いてその動作を説明する。 The above is the basic configuration of the power supply device 250. Next, the operation will be described.

レーザ装置100に異常(もしくはその予兆)が発生すると、異常検出器600は異常検出信号SABNをアサートし、スイッチSW1をオンする。これにより過電圧抑制回路500が高周波電源400に接続され、過電圧抑制回路500が接続されるノード間の過電圧が抑制される。 When an abnormality (or a sign thereof) occurs in the laser apparatus 100, the abnormality detector 600 asserts the abnormality detection signal S ABN and turns on the switch SW1. As a result, the overvoltage suppressing circuit 500 is connected to the high frequency power supply 400, and the overvoltage between the nodes to which the overvoltage suppressing circuit 500 is connected is suppressed.

一方、レーザ装置100の正常状態においては、異常検出器600が異常検出信号SABNをネゲートされており、スイッチSW1はオフである。したがって過電圧抑制回路500は高周波電源400から切り離される。 On the other hand, in the normal state of the laser device 100, the abnormality detector 600 has negated the abnormality detection signal S ABN , and the switch SW1 is off. Therefore, the overvoltage suppressing circuit 500 is disconnected from the high frequency power supply 400.

以上が電源装置250の動作である。この電源装置250によれば、過電圧抑制回路500を設けることで、共振回路210の共振周波数fRESが設計値から大きく外れた場合に、過電圧を抑制でき、高周波電源400などに含まれる半導体素子を保護できる。また過電圧が生じない状況では、スイッチSW1をオフしておくことで、過電圧抑制回路500にリーク電流が流れるのを防止でき、またリーク電流に起因するノイズを抑制できる。 The above is the operation of the power supply device 250. According to this power supply device 250, by providing the overvoltage suppressing circuit 500, the overvoltage can be suppressed when the resonance frequency f RES of the resonance circuit 210 deviates greatly from the design value, and the semiconductor element included in the high frequency power supply 400 or the like can be provided. Can be protected. Further, in a situation where an overvoltage does not occur, by turning off the switch SW1, it is possible to prevent a leak current from flowing through the overvoltage suppressing circuit 500, and it is possible to suppress noise due to the leak current.

本発明は、図2のブロック図や回路図として把握され、あるいは上述の説明から導かれるさまざまな装置、方法に及ぶものであり、特定の構成に限定されるものではない。以下、本発明の範囲を狭めるためではなく、発明の本質や動作の理解を助け、またそれらを明確化するために、より具体的な構成例や実施例を説明する。 The present invention extends to various devices and methods understood as the block diagram and circuit diagram of FIG. 2 or derived from the above description, and is not limited to a specific configuration. Hereinafter, more specific configuration examples and examples will be described in order to help understanding of the essence and operation of the invention and to clarify them, not to narrow the scope of the invention.

・異常検出器600について
異常検出器600の検出速度が遅いと、スイッチSW1のターンオンが遅れ、遅れ時間の間、過電圧が発生することになり好ましくない。したがって異常検出器600には、過電圧抑制回路500が有効に働くべきタイミング(すなわち実際に過電圧が発生するタイミング)より早く、異常検出信号SABNをアサートすることが要求される。そこで以下では、高速な異常検出器600について説明する。
-Abnormality detector 600 If the detection speed of the abnormality detector 600 is slow, turn-on of the switch SW1 is delayed, and an overvoltage is generated during the delay time, which is not preferable. Therefore, the abnormality detector 600 is required to assert the abnormality detection signal S ABN earlier than the timing at which the overvoltage suppressing circuit 500 should work effectively (that is, the timing at which the overvoltage actually occurs). Therefore, the high-speed abnormality detector 600 will be described below.

図3(a)、(b)は、異常検出器600の構成例を示す回路図である。レーザ共振器200は、金属の筐体(ガスチャンバー)220で覆われており、筐体220は、アース線222を介して接地される。 3A and 3B are circuit diagrams showing a configuration example of the abnormality detector 600. The laser resonator 200 is covered with a metal housing (gas chamber) 220, and the housing 220 is grounded via a ground wire 222.

図3(a)の異常検出器600は、アース線222に流れる電流Ixにもとづいて、異常の有無を判定する。より具体的には、アース線に流れる電流Ixの振幅が所定のしきい値を超えると、異常と判定することができる。 The abnormality detector 600 of FIG. 3A determines the presence or absence of abnormality based on the current Ix flowing through the ground wire 222. More specifically, when the amplitude of the current Ix flowing through the ground wire exceeds a predetermined threshold value, it can be determined that the abnormality.

図3(b)の異常検出器600は、筐体220の対接地電位Vxにもとづいて、異常の有無を判定する。より具体的には、電位Vxの振幅が所定のしきい値を超えると、異常と判定することができる。 The abnormality detector 600 of FIG. 3B determines whether or not there is an abnormality based on the ground potential Vx of the housing 220. More specifically, when the amplitude of the potential Vx exceeds a predetermined threshold value, it can be determined as abnormal.

以上が異常検出器600の構成例である。続いて異常検出器600の動作原理を説明する。放電電極202と筐体220の間、放電電極204と筐体220の間には寄生容量Cpが存在する。レーザ共振器200が正常であるとき、設計した共振周波数fRESの電流がレーザ共振器200(電極202,204間)に流れ、寄生容量Cpの影響は無視することができる。このとき寄生容量Cpおよびアース線222に流れる電流Ixは実質的にゼロであり、また筐体220の電位Vxは実質的に接地電圧と等しい。 The above is a configuration example of the abnormality detector 600. Next, the operation principle of the abnormality detector 600 will be described. A parasitic capacitance Cp exists between the discharge electrode 202 and the housing 220 and between the discharge electrode 204 and the housing 220. When the laser resonator 200 is normal, a current of the designed resonance frequency f RES flows in the laser resonator 200 (between the electrodes 202 and 204), and the influence of the parasitic capacitance Cp can be ignored. At this time, the parasitic capacitance Cp and the current Ix flowing through the ground line 222 are substantially zero, and the potential Vx of the housing 220 is substantially equal to the ground voltage.

放電電極202や放電電極204に接続される配線が断線し、あるいはインピーダンスが増大すると、共振回路210の共振周波数が設計値より高くなり、高周波の電流が流れる。高周波の電流は、容量値の小さい寄生容量Cpを経由してアース線222に流れる。これにより、筐体220の電位Vxが非ゼロとなる。 When the wiring connected to the discharge electrode 202 or the discharge electrode 204 is broken or the impedance increases, the resonance frequency of the resonance circuit 210 becomes higher than the designed value, and a high-frequency current flows. A high-frequency current flows through the ground line 222 via the parasitic capacitance Cp having a small capacitance value. As a result, the potential Vx of the housing 220 becomes non-zero.

図3(a)、(b)の異常検出器600によれば、共振回路210の共振周波数のシフトを高速に検出することができ、実際に電源装置250の内部で過電圧が発生するより前に(あるいは発生したとしても直ちに)、スイッチSW1をターンオンすることができる。 According to the abnormality detector 600 of FIGS. 3A and 3B, the shift of the resonance frequency of the resonance circuit 210 can be detected at high speed, and before the overvoltage actually occurs inside the power supply device 250. The switch SW1 can be turned on (or immediately if it occurs).

なお、異常検出器600の異常検出の方法はこれに限定されない。応答性の低い方式を用いるかわりに、異常判定のしきい値を厳しく設定してもよい。 The method of detecting an abnormality of the abnormality detector 600 is not limited to this. Instead of using a method with low responsiveness, the threshold value for abnormality determination may be set strictly.

図4(a)〜(d)は、過電圧抑制回路500の構成例を示す回路図である。図4(a)の過電圧抑制回路500は、ガスアレスタ502を含む。ガスアレスタ502の端子間電圧が動作開始電圧を超えると、ガスアレスタ502が短絡状態となり、過電圧抑制回路500の両端間電圧ΔVが抑制される。 4A to 4D are circuit diagrams showing configuration examples of the overvoltage suppressing circuit 500. The overvoltage suppressing circuit 500 in FIG. 4A includes a gas arrester 502. When the voltage between the terminals of the gas arrester 502 exceeds the operation start voltage, the gas arrester 502 is short-circuited and the voltage ΔV across the overvoltage suppressing circuit 500 is suppressed.

ここで過電圧抑制回路500の両端間の静電容量は、一対の放電電極の静電容量の1/5より小さいことが好ましい。なぜなら、過電圧抑制回路500の静電容量が大きすぎると、共振回路210の共振周波数fRESをシフトさせることとなり、回路動作に影響を及ぼすからである。この観点において、図4(a)のようにガスアレスタ502単体で過電圧抑制回路500を構成すると、静電容量が大きすぎる場合がある。 Here, the electrostatic capacitance between both ends of the overvoltage suppressing circuit 500 is preferably smaller than ⅕ of the electrostatic capacitance of the pair of discharge electrodes. This is because if the electrostatic capacitance of the overvoltage suppressing circuit 500 is too large, the resonance frequency f RES of the resonance circuit 210 will be shifted, which will affect the circuit operation. From this point of view, when the overvoltage suppressing circuit 500 is configured by the gas arrester 502 alone as shown in FIG. 4A, the electrostatic capacitance may be too large.

このような場合には図4(b)に示すように、複数の過電圧抑制素子(サージ保護素子)を直列に接続するとよい。これにより、過電圧抑制回路500の両端間の静電容量は、複数の過電圧抑制素子それぞれの静電容量の合成容量となるため、個々の過電圧抑制素子の静電容量よりも小さくすることができる。 In such a case, as shown in FIG. 4B, a plurality of overvoltage suppressing elements (surge protection elements) may be connected in series. As a result, the electrostatic capacitance between both ends of the overvoltage suppressing circuit 500 becomes a combined capacitance of the electrostatic capacities of the plurality of overvoltage suppressing elements, and thus can be made smaller than the electrostatic capacities of the individual overvoltage suppressing elements.

より詳しくは図4(b)の過電圧抑制回路500は、直列に接続されるガスアレスタ502とバリスタ504を含む。この構成では、過電圧抑制回路500の両端間に高電圧ΔVが印加されると、ガスアレスタ502の端子間電圧が動作開始電圧を超えて短絡状態となり、高電圧ΔVがバリスタ504に印加される。その結果、バリスタ504のI−V特性に応じて電流が流れ、高電圧ΔVを抑制できる。バリスタ504に代えて、一般的な過電圧抑制素子を用いることができ、たとえばSPD(酸化亜鉛型アレスタ)やトランゾープを用いてもよい。 More specifically, the overvoltage suppressing circuit 500 of FIG. 4B includes a gas arrester 502 and a varistor 504 connected in series. In this configuration, when the high voltage ΔV is applied across the overvoltage suppressing circuit 500, the inter-terminal voltage of the gas arrester 502 exceeds the operation start voltage and becomes a short circuit state, and the high voltage ΔV is applied to the varistor 504. As a result, a current flows according to the IV characteristic of the varistor 504, and the high voltage ΔV can be suppressed. Instead of the varistor 504, a general overvoltage suppressing element can be used, and for example, SPD (zinc oxide type arrester) or transorp may be used.

図4(a)、(b)の過電圧抑制回路500は、過電圧に応答して動作するものであったが、その限りでなく、過電圧抑制回路500は、レーザ共振器200の開放異常状態における過電圧の発生を予防する回路であってもよい。より具体的には過電圧抑制回路500は、同期周波数fRFにおいては、共振回路210に比べて十分にハイインピーダンスであり、同期周波数fRFより高い周波数においては、低いインピーダンスを有してもよい。図4(c)の過電圧抑制回路500は、キャパシタ506を含む。キャパシタ506の静電容量は、一対の放電電極202,204の静電容量の1/5以下、好ましくは1/10以下である。開放異常が発生しても、このキャパシタ506が負荷として残るため、共振周波数が高くなりすぎるのを防止でき、過電圧を抑制できる。 The overvoltage suppressing circuit 500 in FIGS. 4A and 4B operates in response to the overvoltage, but the present invention is not limited to this. The overvoltage suppressing circuit 500 does not operate in the abnormal open state of the laser resonator 200. It may be a circuit for preventing the occurrence of. Overvoltage suppression circuit 500 and more specifically, in the synchronizing frequency f RF, a sufficiently high impedance compared to the resonant circuit 210, at frequencies higher than the synchronous frequency f RF, may have a low impedance. The overvoltage suppressing circuit 500 in FIG. 4C includes a capacitor 506. The capacitance of the capacitor 506 is 1/5 or less, preferably 1/10 or less of the capacitance of the pair of discharge electrodes 202 and 204. Even if the open abnormality occurs, the capacitor 506 remains as a load, so that it is possible to prevent the resonance frequency from becoming too high and suppress the overvoltage.

図4(d)の過電圧抑制回路500は、LCR負荷回路を含む。開放状態となっても、LCR負荷によって共振周波数が高くなりすぎるのを防止でき、過電圧を抑制できる。 The overvoltage suppressing circuit 500 in FIG. 4D includes an LCR load circuit. Even in the open state, it is possible to prevent the resonance frequency from becoming too high due to the LCR load, and suppress overvoltage.

なお過電圧抑制回路500を、図4(a)〜(d)に例示した回路のいくつかを並列に接続した構成であってもよい。 The overvoltage suppressing circuit 500 may have a configuration in which some of the circuits illustrated in FIGS. 4A to 4D are connected in parallel.

図5は、電源装置250の具体的な構成例を示す回路図である。レーザ装置100には、発光期間(励振期間)と停止期間を指示する制御信号(励振信号)S1が入力され、励振信号S1にもとづいて間欠動作する。たとえば励振信号S1は、数kHz程度の繰り返し周波数、デューティ比5%程度のパルス信号である。 FIG. 5 is a circuit diagram showing a specific configuration example of the power supply device 250. A control signal (excitation signal) S1 for instructing a light emission period (excitation period) and a stop period is input to the laser device 100, and intermittent operation is performed based on the excitation signal S1. For example, the excitation signal S1 is a pulse signal having a repetition frequency of about several kHz and a duty ratio of about 5%.

高周波電源400は、Hブリッジ回路(フルブリッジ回路)402と昇圧トランス404とを備える。高周波電源400は、Hブリッジ回路402と昇圧トランス404のセット401を、2系統備え、それらが並列に接続されている。もちろんこのセット401を1系統のみで構成してもよい。励振信号S1が励振区間を指示するレベル(たとえばハイ)の間、Hブリッジ回路402はスイッチングし、昇圧トランス404の1次巻線に交流電圧VACを印加する。Hブリッジ回路402のスイッチング周波数は、同期周波数fRFであり、たとえば2MHz程度に設定される。その結果、昇圧トランス404の2次巻線には、交流電圧VACを昇圧した高周波電圧VRFが発生する。 The high frequency power supply 400 includes an H bridge circuit (full bridge circuit) 402 and a step-up transformer 404. The high frequency power supply 400 includes two sets of an H bridge circuit 402 and a set 401 of a step-up transformer 404, which are connected in parallel. Of course, this set 401 may be configured with only one system. While the excitation signal S1 is at a level (for example, high) indicating the excitation section, the H bridge circuit 402 switches and applies the AC voltage V AC to the primary winding of the step-up transformer 404. The switching frequency of the H-bridge circuit 402 is the synchronization frequency f RF and is set to, for example, about 2 MHz. As a result, a high frequency voltage V RF generated by boosting the AC voltage V AC is generated in the secondary winding of the step-up transformer 404.

直流電源300は、バンクコンデンサ302および充電回路304を含む。バンクコンデンサ302は、DCリンク306の間に設けられる。充電回路304はバンクコンデンサ302を充電し、バンクコンデンサ302の電圧VDCを一定に保つ。 DC power supply 300 includes a bank capacitor 302 and a charging circuit 304. The bank capacitor 302 is provided between the DC links 306. The charging circuit 304 charges the bank capacitor 302 and keeps the voltage VDC of the bank capacitor 302 constant.

励振区間の間、Hブリッジ回路402がスイッチング動作することにより、バンクコンデンサ302に蓄えられたエネルギー(電荷)が放出され、直流電圧VDCの電圧レベルは低下する。充電回路304は、直流電圧VDCの電圧レベルの低下を補うように、バンクコンデンサ302に充電電流を供給する。すなわち、直流電源300もまた、励振信号S1と同期して間欠動作する。 During the excitation period, the H bridge circuit 402 performs a switching operation, so that the energy (charge) stored in the bank capacitor 302 is released, and the voltage level of the DC voltage V DC decreases. The charging circuit 304 supplies a charging current to the bank capacitor 302 so as to compensate for the decrease in the voltage level of the DC voltage V DC . That is, the DC power supply 300 also operates intermittently in synchronization with the excitation signal S1.

なお直流電源300を、励振期間中も含めて定常的に動作するDC/DCコンバータで構成してもよい。 The DC power supply 300 may be composed of a DC/DC converter that operates steadily even during the excitation period.

(用途)
続いてレーザ装置100の用途を説明する。図6は、レーザ装置100を備えるレーザ加工装置900を示す図ある。レーザ加工装置900は、対象物902にレーザパルス904を照射し、対象物902を加工する。対象物902の種類は特に限定されず、また加工の種類も、穴空け(ドリル)、切断などが例示されるが、その限りではない。
(Use)
Next, the application of the laser device 100 will be described. FIG. 6 is a diagram showing a laser processing apparatus 900 including the laser apparatus 100. The laser processing apparatus 900 irradiates the object 902 with a laser pulse 904 to process the object 902. The type of the object 902 is not particularly limited, and examples of the type of processing include, but are not limited to, drilling and cutting.

レーザ加工装置900は、レーザ装置100、光学系910、制御装置920、ステージ930を備える。対象物902はステージ930上に載置され、必要に応じて固定される。ステージ930は、制御装置920からの位置制御信号S2に応じて、対象物902を位置決めし、対象物902とレーザパルス904の照射位置を相対的にスキャンする。ステージ930は、1軸、2軸(XY)あるいは3軸(XYZ)であり得る。 The laser processing device 900 includes a laser device 100, an optical system 910, a control device 920, and a stage 930. The object 902 is placed on the stage 930 and fixed as necessary. The stage 930 positions the target object 902 according to the position control signal S2 from the control device 920, and relatively scans the irradiation position of the target object 902 and the laser pulse 904. The stage 930 can be uniaxial, biaxial (XY) or triaxial (XYZ).

レーザ装置100は、制御装置920からのトリガ信号(励振信号)S1に応じて発振し、レーザパルス906を発生する。光学系910は、レーザパルス906を対象物902に照射する。光学系910の構成は特に限定されず、ビームを対象物902に導くためのミラー群、ビーム整形のためのレンズやアパーチャなどを含みうる。 The laser device 100 oscillates in response to a trigger signal (excitation signal) S1 from the control device 920 and generates a laser pulse 906. The optical system 910 irradiates the object 902 with a laser pulse 906. The configuration of the optical system 910 is not particularly limited, and may include a mirror group for guiding the beam to the object 902, a lens for beam shaping, an aperture, and the like.

制御装置920は、レーザ加工装置900を統括的に制御する。具体的には制御装置920は、レーザ装置100に対して間欠的に励振信号S1を出力する。また制御装置920は、加工処理を記述するデータ(レシピ)にしたがってステージ930を制御するための位置制御信号S2を生成する。 The control device 920 comprehensively controls the laser processing device 900. Specifically, the control device 920 intermittently outputs the excitation signal S1 to the laser device 100. The control device 920 also generates a position control signal S2 for controlling the stage 930 according to data (recipe) describing the processing.

以上、本発明について、実施の形態をもとに説明した。この実施の形態は例示であり、それらの各構成要素や各処理プロセスの組み合わせにいろいろな変形例が可能なこと、またそうした変形例も本発明の範囲にあることは当業者に理解されるところである。以下、こうした変形例について説明する。 The present invention has been described above based on the embodiment. This embodiment is merely an example, and it will be understood by those skilled in the art that various modifications can be made to the combinations of their respective constituent elements and processing processes, and that such modifications are also within the scope of the present invention. is there. Hereinafter, such modified examples will be described.

過電圧抑制回路の配置について、いくつかの変形例を説明する。図2では、過電圧抑制回路500を、Hブリッジ回路402と昇圧トランス404の間に接続したがその限りでない。図7(a)、(b)は、過電圧抑制回路500の配置の変形例を示す図である。 Some modifications of the arrangement of the overvoltage suppressing circuit will be described. Although the overvoltage suppressing circuit 500 is connected between the H bridge circuit 402 and the step-up transformer 404 in FIG. 2, this is not the only case. FIGS. 7A and 7B are diagrams showing modified examples of the arrangement of the overvoltage suppressing circuit 500.

図7(a)に示すように、過電圧抑制回路500およびスイッチSW1を、高周波電源400の出力ノード、すなわち昇圧トランス404の2次側に設けてもよい。これにより、2次側の電圧VRFの過電圧が抑制され、ひいては1次側の過電圧を抑制することができる。 As shown in FIG. 7A, the overvoltage suppressing circuit 500 and the switch SW1 may be provided on the output node of the high frequency power supply 400, that is, on the secondary side of the step-up transformer 404. As a result, the overvoltage of the secondary-side voltage V RF is suppressed, and thus the overvoltage of the primary side can be suppressed.

図7(b)に示すように、過電圧抑制回路500およびスイッチSW1のセットを、Hブリッジ回路402を構成するスイッチ(トランジスタ)MH,MLそれぞれと並列に設けてもよい。 As shown in FIG. 7B, a set of the overvoltage suppressing circuit 500 and the switch SW1 may be provided in parallel with each of the switches (transistors) MH and ML that form the H bridge circuit 402.

過電圧抑制回路500およびスイッチSW1を、レーザ共振器200側に設けてもよい。 The overvoltage suppressing circuit 500 and the switch SW1 may be provided on the laser resonator 200 side.

異常検出器による異常検出方法についても、いくつかの変形例を説明する。 Some variations of the abnormality detection method by the abnormality detector will be described.

異常検出器は、レーザ装置の出力光の有無にもとづいて異常を判定してもよい。レーザ装置が非発光の場合(あるいは光量が低下の場合)に、異常と判定してもよい。 The abnormality detector may determine the abnormality based on the presence or absence of output light from the laser device. If the laser device does not emit light (or the amount of light decreases), it may be determined to be abnormal.

異常検出器は、共振周波数の電流成分にもとづいて異常を判定してもよい。負荷(共振回路)もしくは高周波電源の出力に流れる電流を監視し、検出値から共振周波数の成分を抽出し、共振周波数の電流が小さい場合には、異常と判定してもよい。 The abnormality detector may determine the abnormality based on the current component of the resonance frequency. The current flowing through the load (resonance circuit) or the output of the high frequency power supply is monitored, the resonance frequency component is extracted from the detected value, and when the current at the resonance frequency is small, it may be determined as abnormal.

異常検出器は、共振周波数以外の電流成分にもとづいて異常を判定してもよい。負荷(共振回路)もしくは高周波電源の出力に流れる電流を監視し、検出値から共振周波数以外の成分を抽出し、共振周波数以外の電流が大きい場合には、異常と判定してもよい。 The abnormality detector may determine the abnormality based on a current component other than the resonance frequency. The current flowing through the load (resonance circuit) or the output of the high frequency power supply is monitored, components other than the resonance frequency are extracted from the detected value, and when the current other than the resonance frequency is large, it may be determined as abnormal.

異常検出器は、ショット後の高周波電源の入力電圧の低下幅にもとづいて異常を判定してもよい。レーザが正常に発光すれば、直流電源の出力コンデンサ(バンクコンデンサ)に蓄えられた電荷が放電され、直流電圧が低下する。したがってバンクコンデンサの電圧を監視し、電圧低下が小さいときに、異常と判定できる。 The abnormality detector may determine the abnormality based on the width of decrease in the input voltage of the high frequency power supply after the shot. When the laser emits light normally, the electric charge stored in the output capacitor (bank capacitor) of the DC power source is discharged, and the DC voltage drops. Therefore, the voltage of the bank capacitor is monitored, and when the voltage drop is small, it can be determined as abnormal.

異常検出器は、共振周波数より高い周波数のノイズにもとづいて異常を判定してもよい。電流が高周波となった場合、高周波の放射ノイズあるいは伝導ノイズが増加する。このノイズをアンテナで検出し、ノイズが増加した場合に異常と判定できる。 The anomaly detector may determine the anomaly based on noise having a frequency higher than the resonance frequency. When the current becomes high frequency, high frequency radiation noise or conduction noise increases. This noise is detected by the antenna, and when the noise increases, it can be determined to be abnormal.

異常検出器は、一対の放電電極間の電圧にもとづいて異常を判定してもよい。高周波電圧を印加しているにもかかわらず、共振回路の両端間に十分な電圧が検出されない場合、異常と判定できる。 The abnormality detector may determine the abnormality based on the voltage between the pair of discharge electrodes. If a sufficient voltage is not detected across the resonance circuit even though the high frequency voltage is applied, it can be determined to be abnormal.

実施の形態にもとづき、具体的な語句を用いて本発明を説明したが、実施の形態は、本発明の原理、応用の一側面を示しているにすぎず、実施の形態には、請求の範囲に規定された本発明の思想を逸脱しない範囲において、多くの変形例や配置の変更が認められる。 Although the present invention has been described by using specific words and phrases based on the embodiments, the embodiments only show one aspect of the principle and application of the present invention. Many modifications and changes in arrangement are possible without departing from the spirit of the present invention defined in the range.

100 レーザ装置
200 レーザ共振器
202,204 放電電極
206 全反射鏡
208 部分反射鏡
210 共振回路
250 電源装置
300 直流電源
302 バンクコンデンサ
304 充電回路
400 高周波電源
402 Hブリッジ回路
404 昇圧トランス
500 過電圧抑制回路
502 ガスアレスタ
504 バリスタ
600 異常検出器
610 通知手段
100 laser device 200 laser resonator 202, 204 discharge electrode 206 total reflection mirror 208 partial reflection mirror 210 resonance circuit 250 power supply device 300 DC power supply 302 bank capacitor 304 charging circuit 400 high-frequency power supply 402 H bridge circuit 404 step-up transformer 500 overvoltage suppression circuit 502 Gas arrester 504 Varistor 600 Abnormality detector 610 Notification means

Claims (5)

一対の放電電極を含むレーザ共振器を駆動する電源装置であって、
前記一対の放電電極の容量を含む共振回路に高周波電圧を印加する高周波電源と、
前記共振回路の両端間、もしくは前記高周波電源の内部ノードの過電圧を抑制する過電圧抑制回路と、
前記過電圧抑制回路と直列に設けられたスイッチと、
異常を検出すると、前記スイッチをオンする異常検出器と、
を備えることを特徴とする電源装置。
A power supply device for driving a laser resonator including a pair of discharge electrodes,
A high frequency power source for applying a high frequency voltage to a resonance circuit including the capacitance of the pair of discharge electrodes;
Between both ends of the resonance circuit, or an overvoltage suppressing circuit for suppressing an overvoltage of an internal node of the high frequency power supply,
A switch provided in series with the overvoltage suppressing circuit,
An abnormality detector that turns on the switch when an abnormality is detected,
A power supply device comprising:
前記レーザ共振器の筐体はアース線を介して接地されており、
前記異常検出器は、前記アース線に流れる電流にもとづいて、前記異常を検出することを特徴とする請求項1に記載の電源装置。
The casing of the laser resonator is grounded via a ground wire,
The power supply device according to claim 1, wherein the abnormality detector detects the abnormality based on a current flowing through the ground wire.
前記レーザ共振器の筐体はアース線を介して接地されており、
前記異常検出器は、前記筐体の電位にもとづいて、前記異常を検出することを特徴とする請求項1に記載の電源装置。
The casing of the laser resonator is grounded via a ground wire,
The power supply device according to claim 1, wherein the abnormality detector detects the abnormality based on a potential of the housing.
前記異常検出器が異常を検出すると、外部に通知する通知手段をさらに備えることを特徴とする請求項1から3のいずれかに記載の電源装置。 4. The power supply device according to claim 1, further comprising a notification unit that notifies the outside when the abnormality detector detects an abnormality. 前記高周波電源は、
インバータと、
前記インバータの出力と接続される1次巻線および前記レーザ共振器と接続される2次巻線を有するトランスと、
を含み、
前記過電圧抑制回路は、前記トランスの1次巻線と接続されることを特徴とする請求項1から4のいずれかに記載の電源装置。
The high frequency power source,
An inverter,
A transformer having a primary winding connected to the output of the inverter and a secondary winding connected to the laser resonator;
Including,
The power supply device according to any one of claims 1 to 4, wherein the overvoltage suppressing circuit is connected to the primary winding of the transformer.
JP2018216527A 2018-11-19 2018-11-19 Power supply for laser device Pending JP2020088031A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2018216527A JP2020088031A (en) 2018-11-19 2018-11-19 Power supply for laser device
KR1020190127041A KR20200058283A (en) 2018-11-19 2019-10-14 Power Supply Apparatus for Laser Apparatus
TW108137172A TWI733215B (en) 2018-11-19 2019-10-16 Power supply device for laser device
CN201910987814.1A CN111200354A (en) 2018-11-19 2019-10-17 Power supply device for laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018216527A JP2020088031A (en) 2018-11-19 2018-11-19 Power supply for laser device

Publications (1)

Publication Number Publication Date
JP2020088031A true JP2020088031A (en) 2020-06-04

Family

ID=70746051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018216527A Pending JP2020088031A (en) 2018-11-19 2018-11-19 Power supply for laser device

Country Status (4)

Country Link
JP (1) JP2020088031A (en)
KR (1) KR20200058283A (en)
CN (1) CN111200354A (en)
TW (1) TWI733215B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023166674A (en) * 2022-05-10 2023-11-22 住友重機械工業株式会社 Power supply device and laser device
JP7679042B1 (en) 2023-11-24 2025-05-19 ユニークチップス合同会社 Electrical resistance measuring device, Hall effect measuring device, and semiconductor characteristic measuring device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01302882A (en) * 1988-05-31 1989-12-06 Mitsubishi Electric Corp Power supply for pulsed discharge laser
JPH0739166A (en) * 1993-07-26 1995-02-07 Toshiba Corp High frequency power supply and laser oscillator
JP2010251411A (en) * 2009-04-13 2010-11-04 Mitsubishi Electric Corp Gas laser oscillator
JP2011233659A (en) * 2010-04-27 2011-11-17 Panasonic Corp Laser oscillation device and laser beam machine

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07162067A (en) * 1993-12-02 1995-06-23 Mitsubishi Electric Corp Laser device and laser discharge tube
JP3496369B2 (en) * 1995-11-06 2004-02-09 三菱電機株式会社 Power supply for laser
TWI307988B (en) * 2005-06-22 2009-03-21 Chao Cheng Lu Laser power source apparatus
JP5920870B2 (en) * 2011-11-02 2016-05-18 株式会社アマダミヤチ Laser power supply
JP5972603B2 (en) * 2012-02-24 2016-08-17 東芝Itコントロールシステム株式会社 Laser power supply device and control method thereof
JP6184798B2 (en) 2013-08-05 2017-08-23 住友重機械工業株式会社 Gas laser device, pulse laser beam output method, and laser processing apparatus
CN105594307B (en) * 2013-10-04 2018-09-28 东芝三菱电机产业系统株式会社 power supply unit
JP2017069561A (en) * 2015-09-29 2017-04-06 パナソニックIpマネジメント株式会社 Gas laser oscillation device
KR20180039032A (en) 2018-03-23 2018-04-17 주식회사 진흥테크 unmanned aerial vehicle and charging station for unmanned aerial vehicle

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01302882A (en) * 1988-05-31 1989-12-06 Mitsubishi Electric Corp Power supply for pulsed discharge laser
JPH0739166A (en) * 1993-07-26 1995-02-07 Toshiba Corp High frequency power supply and laser oscillator
JP2010251411A (en) * 2009-04-13 2010-11-04 Mitsubishi Electric Corp Gas laser oscillator
JP2011233659A (en) * 2010-04-27 2011-11-17 Panasonic Corp Laser oscillation device and laser beam machine

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023166674A (en) * 2022-05-10 2023-11-22 住友重機械工業株式会社 Power supply device and laser device
JP7679042B1 (en) 2023-11-24 2025-05-19 ユニークチップス合同会社 Electrical resistance measuring device, Hall effect measuring device, and semiconductor characteristic measuring device
JP2025085316A (en) * 2023-11-24 2025-06-05 ユニークチップス合同会社 Electrical resistance measuring device, Hall effect measuring device, and semiconductor characteristic measuring device

Also Published As

Publication number Publication date
CN111200354A (en) 2020-05-26
TWI733215B (en) 2021-07-11
TW202027390A (en) 2020-07-16
KR20200058283A (en) 2020-05-27

Similar Documents

Publication Publication Date Title
JP3197169B2 (en) Lighting circuit of discharge lamp
US20040004797A1 (en) Spark management method and device
JP5920870B2 (en) Laser power supply
NL1026187C2 (en) Device for generating corona discharges.
US9232627B2 (en) Radio-frequency oscillation circuit
JP2020088031A (en) Power supply for laser device
US8207690B2 (en) High-pressure discharge lamp ballast with rapid lamp restart circuit
JP7742547B2 (en) Gate drive circuit, gate drive device, high frequency power supply device and system
JP2007018960A (en) Discharge lamp lighting circuit
JP4206914B2 (en) Electrodeless discharge lamp lighting device and electrodeless discharge lamp device
KR102531290B1 (en) Laser apparatus and power supply apparatus thereof
KR20100130970A (en) Electronic ballasts and methods for operating at least one discharge lamp
JP2000307174A (en) Laser system
JP4805205B2 (en) Power supply for discharge load
JP6831270B2 (en) Power control device for high frequency power supply, control method for high frequency power supply, and light source for laser machining system
US7548402B2 (en) High voltage pulse generating circuit
JP6246300B1 (en) Ignition device
JP4186788B2 (en) Electrodeless discharge lamp lighting device
US7394203B2 (en) Method and system for open lamp protection
US8120270B2 (en) Circuit arrangement and method for operating a discharge lamp with preheatable electrodes
JP2016110885A (en) Discharge lamp lighting device
JP2023172238A (en) light source device
JP2011103269A (en) Power source for magnetron driving
JP2005057823A (en) Pulse power supply
JPH027484A (en) Discharge type excimer laser device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20210714

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20220729

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20220809

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20221011

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230124

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230327

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20230704