TWI733215B - Power supply device for laser device - Google Patents
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- TWI733215B TWI733215B TW108137172A TW108137172A TWI733215B TW I733215 B TWI733215 B TW I733215B TW 108137172 A TW108137172 A TW 108137172A TW 108137172 A TW108137172 A TW 108137172A TW I733215 B TWI733215 B TW I733215B
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- 230000005856 abnormality Effects 0.000 claims abstract description 67
- 230000001629 suppression Effects 0.000 claims abstract description 54
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- 238000012545 processing Methods 0.000 description 11
- 230000002159 abnormal effect Effects 0.000 description 10
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- 230000008569 process Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/097—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser
- H01S3/09702—Details of the driver electronics and electric discharge circuits
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/0014—Monitoring arrangements not otherwise provided for
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M5/00—Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases
- H02M5/02—Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into DC
- H02M5/04—Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into DC by static converters
- H02M5/10—Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into DC by static converters using transformers
- H02M5/16—Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into DC by static converters using transformers for conversion of frequency
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
- H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
- H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0038—Circuits or arrangements for suppressing, e.g. by masking incorrect turn-on or turn-off signals, e.g. due to current spikes in current mode control
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- Engineering & Computer Science (AREA)
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- Optics & Photonics (AREA)
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- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Mechanical Engineering (AREA)
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Abstract
[課題] 提供一種提高信賴性之雷射裝置。 [解決手段] 高頻電源(400)向包括一對放電電極(202、204)的電容之共振電路(210)施加高頻電壓(VRF )。過電壓抑制電路(500)抑制共振電路(210)的兩端之間的過電壓。若異常檢測器(600)檢測到異常,則停止來自高頻電源(400)的高頻電壓(VRF )的施加。[Question] Provide a laser device that improves reliability. [Solution] The high-frequency power supply (400) applies a high-frequency voltage (V RF ) to the resonant circuit (210) including a pair of discharge electrodes (202, 204) of the capacitor. The overvoltage suppression circuit (500) suppresses the overvoltage between both ends of the resonance circuit (210). If the abnormality detector (600) detects an abnormality, the application of the high-frequency voltage (V RF ) from the high-frequency power supply (400) is stopped.
Description
本發明有關電源裝置。The present invention relates to a power supply device.
作為產業用的加工工具,廣泛普及有雷射加工裝置。關於雷射加工裝置,使用CO2
雷射等的高輸出的氣體雷射。圖1為雷射裝置100R的方塊圖。雷射裝置100R具備雷射共振器200及電源裝置250R。雷射共振器200具備一對放電電極202、204、全反射鏡206、及部分反射鏡208。As industrial processing tools, laser processing devices are widely used. Regarding the laser processing device, a high-output gas laser such as a CO 2 laser is used. Fig. 1 is a block diagram of a
一對放電電極202、204設置在填充有CO2
等雷射介質氣體之氣體腔內。在一對放電電極202、204之間存在有電容C。該電容C與電感L(電感元件或寄生電感)形成具有共振頻率fRES
之共振電路210。A pair of
電源裝置250R向共振電路210施加高頻電壓VRF
。高頻電壓VRF
的頻率fRF
(以下,稱作同步頻率)設定在共振電路的頻率fRES
的附近。藉由施加高頻電壓VRF
,在一對放電電極202、204之間流過放電電流。藉由放電電流激勵雷射介質氣體而形成反轉分布。激發光在由全反射鏡206和部分反射鏡208所形成之光共振器內往返移動,且藉由通過雷射介質氣體而增幅。所增幅之光的一部分從部分反射鏡208作為輸出而被取出。The
電源裝置250R具備:直流電源300,其係生成被穩定化之直流電壓VDC
;以及高頻電源400,其係將直流電壓VDC
轉換成高頻電壓VRF
。
[先前技術文獻]
[專利文獻]The
[專利文獻1] 日本特開2018-39032號專利公報 [專利文獻2] 日本特開2015-32746號專利公報[Patent Document 1] Japanese Patent Application Publication No. 2018-39032 [Patent Document 2] Japanese Patent Application Publication No. 2015-32746
[發明欲解決之課題][The problem to be solved by the invention]
本發明人等對圖1的雷射裝置100R進行研究之結果,發現以下課題。The inventors of the present invention conducted research on the
若在放電電極202或204中發生接觸不良等,則以開放狀態運行。開放狀態下,電容C變得非常小,因此共振電路的共振頻率成為非常高的值fRES
’。若在該狀態下,繼續施加同步頻率f0
(f0
<fRES
’)的高頻電壓VRF
,則在共振頻率fRES
’中,產生超過高頻電壓VRF
的振幅之非常高的電壓。若該高電壓被施加到高頻電源400的內部的半導體元件(亦即功率電晶體),則可靠性降低。If poor contact or the like occurs in the
本發明係在相關之狀況下完成者,其一種態樣的例示性目的之一在於提供一種提高了可靠性之雷射裝置。 [解決課題之手段]The present invention was completed under relevant conditions, and one of the illustrative purposes of one aspect is to provide a laser device with improved reliability. [Means to solve the problem]
本發明的一種態樣與驅動包括一對放電電極之雷射共振器之電源裝置有關。電源裝置具備:高頻電源,其係向包括一對放電電極的電容之共振電路施加高頻電壓;過電壓抑制電路,其係抑制共振電路的兩端之間或者高頻電源的內部節點的過電壓;開關,其係與過電壓抑制電路串聯:以及異常檢測器,其係若檢測到異常,則打開開關。One aspect of the present invention relates to a power supply device for driving a laser resonator including a pair of discharge electrodes. The power supply device is equipped with: a high-frequency power supply, which applies a high-frequency voltage to a resonance circuit including a pair of discharge electrodes, and an over-voltage suppression circuit, which suppresses the overvoltage between the two ends of the resonance circuit or the internal nodes of the high-frequency power supply. Voltage; switch, which is connected in series with the overvoltage suppression circuit; and an abnormality detector, which turns on the switch if an abnormality is detected.
在此所言之「異常」係在電源裝置內可能導致產生過電壓之異常。藉由設置過電壓抑制電路,在共振電路的共振頻率大大偏離設計值時,能夠抑制過電壓,從而能夠保護包括於高頻電源等中之半導體元件。還有,在不產生過電壓之狀況下,藉由預先關閉開關,能夠防止洩漏電流流過過電壓抑制電路,從而能夠抑制由洩漏電流引起之干擾。The "abnormality" mentioned here is an abnormality that may cause overvoltage in the power supply device. By providing the overvoltage suppression circuit, when the resonance frequency of the resonance circuit greatly deviates from the design value, the overvoltage can be suppressed, thereby being able to protect the semiconductor components included in the high-frequency power supply. In addition, by closing the switch in advance under the condition that no overvoltage is generated, leakage current can be prevented from flowing through the overvoltage suppression circuit, thereby suppressing the interference caused by the leakage current.
雷射共振器的框體亦可經由接地線接地。異常檢測器亦可依據流過接地線之電流來檢測異常。The frame of the laser resonator can also be grounded via a ground wire. The anomaly detector can also detect anomalies based on the current flowing through the ground wire.
雷射共振器的框體經由接地線接地,異常檢測器亦可依據框體的電位來檢測異常。The frame of the laser resonator is grounded via a ground wire, and the anomaly detector can also detect anomalies based on the potential of the frame.
電源裝置還可具備:若異常檢測器檢測到異常,則通知給外部之通知機構。The power supply device may also be equipped with: if an abnormality is detected by the abnormality detector, it will notify an external notification organization.
高頻電源亦可包括逆變器和具有與逆變器的輸出端連接之1次繞組及與雷射共振器連接之2次繞組之變壓器。過電壓抑制電路亦可與變壓器的1次繞組連接。The high-frequency power supply may also include an inverter and a transformer with a primary winding connected to the output terminal of the inverter and a secondary winding connected to the laser resonator. The overvoltage suppression circuit can also be connected to the primary winding of the transformer.
過電壓抑制電路亦可包括電壓抑制器、突波保護裝置、氣體避雷器(突波避雷器)中的至少一個。The overvoltage suppression circuit may also include at least one of a voltage suppressor, a surge protection device, and a gas arrester (surge arrester).
過電壓抑制電路亦可包括串聯連接之複數個元件。各個元件的電容較大時,藉由串聯連接該等,能夠減小過電壓抑制電路的電容。The overvoltage suppression circuit may also include a plurality of elements connected in series. When the capacitance of each element is large, by connecting them in series, the capacitance of the overvoltage suppression circuit can be reduced.
過電壓抑制電路亦可包括電容為一對放電電極的電容的1/10以下的電容器。此時,電容器成為負載,因此能夠防止共振頻率變得過高,從而能夠抑制過電壓。The overvoltage suppression circuit may also include a capacitor having a capacitance of 1/10 or less of the capacitance of a pair of discharge electrodes. At this time, the capacitor becomes a load, so it is possible to prevent the resonance frequency from becoming too high, and it is possible to suppress overvoltage.
過電壓抑制電路亦可包括LCR負載。此時,即使放電電極發生異常而成為開放狀態,亦能夠藉由LCR負載防止共振頻率變得過高,從而能夠抑制過電壓。The overvoltage suppression circuit can also include an LCR load. At this time, even if the discharge electrode becomes an open state due to an abnormality, the LCR load can prevent the resonance frequency from becoming too high, thereby suppressing overvoltage.
另外,在方法、裝置、系統等之間,相互置換以上構成要件的任意組合或本發明的構成要件或表現形式之裝置,作為本發明的態樣是同樣有效。 [發明效果]In addition, among methods, devices, systems, etc., it is equally effective as an aspect of the present invention to replace any combination of the above constituent elements or the constituent elements or expression forms of the present invention with each other. [Effects of the invention]
依本發明的一種態樣,能夠提高雷射裝置的可靠性。According to one aspect of the present invention, the reliability of the laser device can be improved.
以下,根據本發明較佳的實施方式,一邊參閱圖式一邊對本發明進行說明。對示於各圖式之相同或相等的構成要件、構件、處理標註相同元件符號,並適當省略重複之說明。又,實施方式僅為例示並非限定發明,記述於實施方式之所有特徵或其組合並不一定是限制本發明的本質者。Hereinafter, according to the preferred embodiments of the present invention, the present invention will be described with reference to the drawings. The same or equivalent constituent elements, members, and processes shown in the various drawings are denoted by the same reference numerals, and repeated descriptions are appropriately omitted. In addition, the embodiment is merely an illustration and does not limit the invention, and all the features or combinations described in the embodiment do not necessarily limit the essence of the invention.
圖2為實施方式之雷射裝置100的方塊圖。雷射裝置100具備雷射共振器200及電源裝置250。FIG. 2 is a block diagram of the
圖2中,雷射共振器200被表示作為等價電路。在一對放電電極202、204之間包括電容C和電阻成分R。電容C與電感L一同形成共振電路210。將該共振電路210的共振頻率設為fRES
。電感L包括電感零件及配線或基板的寄生電感中的至少一者。In FIG. 2, the
電源裝置250向共振電路210施加高頻電壓VRF
。高頻電壓VRF
的頻率fRF
(以下,稱作同步頻率)設定在共振電路的頻率fRES
的附近。藉由施加高頻電壓VRF
,在一對放電電極202、204之間流過放電電流。藉由放電電流激勵雷射介質氣體而形成反轉分布。The
電源裝置250具備:直流電源300、高頻電源400、過電壓抑制電路500、開關SW1、異常檢測器600、通知機構610。關於直流電源300,其輸出端與一對DC鏈310連接而在DC鏈310產生被穩定化成既定的電壓位準之直流電壓(亦稱作DC鏈電壓)VDC
。The
高頻電源400的輸入與DC鏈310連接而接收DC鏈電壓VDC
。高頻電源400產生具有與共振頻率fRES
相同頻率(同步頻率)fRF
之高頻電壓VRF
並供給到雷射共振器200。高頻電源400的構成並無限定,能夠包括將直流電壓VDC
轉換成交流電壓VAC
之H橋接電路(逆變器)402和升壓H橋接電路402的輸出電壓VAC
之升壓變壓器404。The input of the high
過電壓抑制電路500構成為能夠抑制共振電路210的兩端之間或者高頻電源的內部節點的過電壓。圖2中,關於過電壓抑制電路500,連接H橋接電路402與升壓變壓器404的連接節點而能夠抑制升壓變壓器404的1次側的電壓的過電壓。The
為了阻斷過電壓抑制電路500的電流路徑,串聯設置開關SW1與過電壓抑制電路500。In order to block the current path of the
若異常檢測器600檢測到雷射裝置100的異常,則斷定異常檢測訊號SABN
並打開開關SW1。在此所言之「異常」係在電源裝置250內能夠導致產生過電壓之異常,換言之,為使共振頻率位移至高於設計值之異常,例如例示出放電電極202、204的接觸不良、電感L的斷開、連接該等之配線的斷開、配線的斷線(斷開)或者由劣化引起之阻抗的增加。再者,電源裝置250可以在發生異常之後斷定異常檢測訊號SABN
,亦可在顯現出異常的預兆之階段斷定異常檢測訊號SABN
。If the
通知機構610將基於異常檢測器600之異常檢測通知給外部。例如,通知機構610亦可為蜂鳴器和燈、顯示器等直接通知給使用者的通知機構。The
或者,通知機構610亦可為與控制蜂鳴器、燈、顯示器之系統側的控制器連接之介面。此時,通知機構610亦可間接地向使用者通知異常的發生。在此時,系統側的控制器將異常發生的通知作為觸發而能夠在適當的時序實施適當的保護處理。Alternatively, the
以上為電源裝置250的基本構成。接著對其動作進行說明。The above is the basic configuration of the
若雷射裝置100中發生異常(或者其預兆),則異常檢測器600斷定異常檢測訊號SABN
並打開開關SW1。藉此,過電壓抑制電路500與高頻電源400連接而過電壓抑制電路500所連接之節點之間的過電壓得到抑制。If an abnormality (or a sign) occurs in the
另一方面,在雷射裝置100為正常的狀態下,異常檢測器600否定異常檢測訊號SABN
並關閉開關SW1。因此,過電壓抑制電路500自高頻電源400斷開。On the other hand, when the
以上為電源裝置250的動作。依該電源裝置250,藉由設置過電壓抑制電路500,在共振電路210的共振頻率fRES
大大偏離設計值時,能夠抑制過電壓,從而能夠保護包括於高頻電源400等中之半導體元件。還有,在不產生過電壓之狀況下,藉由預先關閉開關SW1,能夠防止洩漏電流流過過電壓抑制電路500,從而能夠抑制由洩漏電流引起之干擾。The above is the operation of the
本發明係作為圖2的方塊圖或電路圖來掌握或者涉及源於上述說明之各種裝置、方法者,並非係限定於特定結構者。以下,並非為了限縮本發明的範圍,而是為了有助於理解發明的本質或動作並且明確該等,對更具體的構成例或實施例進行說明。The present invention is grasped as the block diagram or circuit diagram of FIG. 2 or related to various devices and methods derived from the above description, and is not limited to a specific structure. Hereinafter, not to limit the scope of the present invention, but to help understand the essence or action of the present invention and clarify the same, more specific configuration examples or embodiments are described.
‧關於異常檢測器600
若異常檢測器600的檢測速度慢,則開關SW1的開啟被延遲,在延遲期間產生過電壓,從而並不較佳。因此,對異常檢測器600要求比過電壓抑制電路500應有效操作之時序(亦即,實際上產生過電壓之時序)更早地斷定異常檢測訊號SABN
。其中,以下對高速的異常檢測器600進行說明。‧About the
圖3(a)、圖3(b)為表示異常檢測器600的構成例之電路圖。雷射共振器200被金屬的框體(氣體腔室)220覆蓋,框體220經由接地線222接地。3(a) and 3(b) are circuit diagrams showing examples of the configuration of the
圖3(a)的異常檢測器600依據流過接地線222之電流Ix來判定有無異常。更具體而言,若流過接地線之電流Ix的振幅超過既定的臨界值,則能夠判定為異常。The
圖3(b)的異常檢測器600依據框體220的接地(Grounding)電位Vx來判定有無異常。更具體而言,若電位Vx的振幅超過既定的臨界值,則能夠判定為異常。The
以上為異常檢測器600的構成例。接著,對異常檢測器600的動作原理進行說明。在放電電極202和框體220之間、放電電極204和框體220之間存在寄生電容Cp。雷射共振器200為正常時,所設計之共振頻率fRES
的電流流過雷射共振器200(電極202、204之間)而能夠忽略寄生電容Cp的影響。此時,流過寄生電容Cp及接地線222之電流Ix實質上為零,並且框體220的電位Vx實質上與接地電壓相等。The above is an example of the configuration of the
若與放電電極202或放電電極204連接之配線斷線或者阻抗增大,則共振電路210的共振頻率變得高於設計值,從而高頻的電流流過。高頻的電流經由電容值小的寄生電容Cp流過接地線222。藉此,框體220的電位Vx成為非零。If the wiring connected to the
依圖3(a)、圖3(b)的異常檢測器600,能夠高速檢測共振電路210的共振頻率的位移,從而能夠在電源裝置250的內部實際上產生過電壓之前(或者即使已經產生亦立即)開啟開關SW1。According to the
再者,異常檢測器600的異常檢測的方法並不限定於此。亦可嚴格地設定異常判定的臨界值來代替使用響應性低的方式。In addition, the method of abnormality detection by the
圖4(a)~圖4(d)為表示過電壓抑制電路500的構成例之電路圖。圖4(a)的過電壓抑制電路500包括氣體避雷器502。若氣體避雷器502的端子之間的電壓超過動作開始電壓,則氣體避雷器502成為短路狀態,過電壓抑制電路500的兩端之間的電壓ΔV得到抑制。4(a) to 4(d) are circuit diagrams showing configuration examples of the
其中,過電壓抑制電路500的兩端之間的電容小於一對放電電極的電容的1/5為較佳。其原因在於,若過電壓抑制電路500的電容過大,則導致使共振電路210的共振頻率fRES
位移,從而對電路動作帶來影響。在該觀點下,如圖4(a)所示,若由氣體避雷器502單體構成過電壓抑制電路500,則存在電容過大之情況。Among them, the capacitance between the two ends of the
這樣的情況下,如圖4(b)所示,串聯連接複數個過電壓抑制元件(突波保護元件)即可。藉此,過電壓抑制電路500的兩端之間的電容成為複數個過電壓抑制元件各自的電容的合成電容,因此能夠設為小於各個過電壓抑制元件的電容。In such a case, as shown in FIG. 4(b), a plurality of overvoltage suppression elements (surge protection elements) may be connected in series. Thereby, the capacitance between both ends of the
更詳細而言,圖4(b)的過電壓抑制電路500包括串聯連接之氣體避雷器502和變阻器504。該構成中,若向過電壓抑制電路500的兩端之間施加高電壓ΔV,則氣體避雷器502的端子之間的電壓超過動作開始電壓而成為短路狀態,而高電壓ΔV施加於變阻器504。其結果,電流根據變阻器504的I-V特性而流動,從而能夠抑制高電壓ΔV。能夠使用一般過電壓抑制元件來代替變阻器504,例如亦可使用SPD(氧化鋅型避雷器)或瞬變吸收器(transorb)。In more detail, the
圖4(a)、圖4(b)的過電壓抑制電路500係響應於過電壓而進行動作者,但並不限定於此,過電壓抑制電路500亦可為預防產生雷射共振器200的開放異常狀態下的過電壓之電路。更具體而言,過電壓抑制電路500在同步頻率fRF
下,相比共振電路210為充分高的高阻抗,在高於同步頻率fRF
的頻率下,亦可具有較低的阻抗。圖4(c)的過電壓抑制電路500包括電容器506。電容器506的電容為一對放電電極202、204的電容的1/5以下,較佳為1/10以下。即使發生開放異常,該電容器506作為負載而殘留,因此能夠防止共振頻率變得過高,從而能夠抑制過電壓。The
圖4(d)的過電壓抑制電路500包括LCR負載電路。即使成為開放狀態,亦能夠藉由LCR負載防止共振頻率變得過高,從而能夠抑制過電壓。The
再者,過電壓抑制電路500亦可為並聯連接例示於圖4(a)~圖4(d)之若干電路的結構。Furthermore, the
圖5為表示電源裝置250的具體的構成例之電路圖。向雷射裝置100輸入指示發光期間(激勵期間)與停止期間之控制訊號(激勵訊號)S1,依據激勵訊號S1進行間歇動作。例如,激勵訊號S1為數kHz左右的重複頻率、佔空比5%左右的脈衝訊號。FIG. 5 is a circuit diagram showing a specific configuration example of the
高頻電源400具備H橋接電路(全橋電路)402及升壓變壓器404。高頻電源400具備2個H橋接電路402與升壓變壓器404的組401的系統,該等被並聯連接。當然,亦可以僅由1個系統構成該組401。激勵訊號S1指示激勵區間之位準(例如高位準)時,H橋接電路402進行開關,並向升壓變壓器404的1次繞組施加交流電壓VAC
。H橋接電路402的開關頻率為同步頻率fRF
,例如設定為2MHz左右。其結果,在升壓變壓器404的2次繞組中產生使交流電壓VAC
升壓之高頻電壓VRF
。The high-
直流電源300包括電容器組302及充電電路304。電容器組302設置在DC鏈306之間。充電電路304對電容器組302進行充電,恆定地保持電容器組302的電壓VDC
。The
在激勵區間時,H橋接電路402進行開關動作,藉此釋放儲存在電容器組302之能量(電荷),直流電壓VDC
的電壓位準下降。充電電路304向電容器組302供給充電電流,以便補償直流電壓VDC
的電壓位準的下降。亦即,直流電源300亦與激勵訊號S1同步而進行間歇動作。During the excitation interval, the H-
再者,亦可由還包括激勵期間而穩定地進行動作之DC/DC轉換器構成直流電源300。Furthermore, the
(用途)
接著,對雷射裝置100的用途進行說明。圖6為表示具備雷射裝置100之雷射加工裝置900之圖。雷射加工裝置900對對象物902照射雷射脈衝904,而對對象物902進行加工。對象物902的種類並無特別限定,並且加工的種類亦例示有打孔(鑽孔)、切斷等,但並不限定於此。(use)
Next, the use of the
雷射加工裝置900具備雷射裝置100、光學系統910、控制裝置920、載台930。對象物902載置於載台930上,並根據需要進行固定。載台930根據來自控制裝置920的位置控制訊號S2定位對象物902,並相對地掃描對象物902與雷射脈衝904的照射位置。載台930能夠為1軸、2軸(XY)或3軸(XYZ)。The
雷射裝置100根據來自控制裝置920的觸發訊號(激勵訊號)S1進行振蕩而產生雷射脈衝906。光學系統910對對象物902照射雷射脈衝906。光學系統910的構成並無特別限定,能夠包括用於將射束導入到對象物902的反射鏡組、用於射束整形的透鏡或孔徑等。The
控制裝置920統括控制雷射加工裝置900。具體而言,控制裝置920對雷射裝置100間歇地輸出激勵訊號S1。又,控制裝置920生成用於根據記述加工處理之資料(配方)控制載台930的位置控制訊號S2。The
以上,依據實施方式對本發明進行了說明。該實施方式為例示,能夠依該等各構成要件或各處理製程的組合形成各種變形例,並且該些變形例亦在本發明的範圍內,被本領域技術人員理解。以下,對該些變形例進行說明。In the foregoing, the present invention has been described based on the embodiments. This embodiment is an example, and various modifications can be formed according to the combination of the constituent elements or the processing processes, and these modifications are also within the scope of the present invention and are understood by those skilled in the art. Hereinafter, these modified examples will be described.
對關於過電壓抑制電路的配置的若干變形例進行說明。圖2中,過電壓抑制電路500連接於H橋接電路402與升壓變壓器404之間,但並不限定於此。圖7(a)、圖7(b)為表示過電壓抑制電路500的配置的變形例之圖。Several modifications regarding the configuration of the overvoltage suppression circuit will be described. In FIG. 2, the
如圖7(a)所示,亦可將過電壓抑制電路500及開關SW1設置在高頻電源400的輸出節點亦即升壓變壓器404的2次側。藉此,2次側的電壓VRF的過電壓得到抑制,進而能夠抑制1次側的過電壓。As shown in FIG. 7(a), the
如圖7(b)所示,亦可將過電壓抑制電路500及開關SW1的組與構成H橋接電路402之開關(電晶體)MH、ML各自並聯設置。As shown in FIG. 7(b), the set of the
亦可將過電壓抑制電路500及開關SW1設置在雷射共振器200側。The
亦對基於異常檢測器之異常檢測方法的若干變形例進行說明。Several modifications of the abnormality detection method based on the abnormality detector are also described.
異常檢測器亦可依據有無雷射裝置的輸出光來判定異常。亦可在雷射裝置不發光時(或者光量下降時),判定為異常。The abnormality detector can also determine abnormalities based on the presence or absence of the output light of the laser device. When the laser device does not emit light (or when the amount of light decreases), it can be judged as abnormal.
異常檢測器亦可依據共振頻率的電流成分來判定異常。亦可在監視流過負載(共振電路)或高頻電源的輸出端之電流,且從檢測值提取共振頻率的成分,共振頻率的電流較小時,判定為異常。The abnormality detector can also determine the abnormality based on the current component of the resonance frequency. It is also possible to monitor the current flowing through the load (resonance circuit) or the output terminal of the high-frequency power supply, and extract the components of the resonance frequency from the detected value. If the current at the resonance frequency is small, it is judged as abnormal.
異常檢測器亦可依據除了共振頻率以外的電流成分來判定異常。亦可在監視流過負載(共振電路)或高頻電源的輸出端之電流,且從檢測值提取除了共振頻率以外的成分,共振頻率以外的電流較大時,判定為異常。The abnormality detector can also determine abnormalities based on current components other than the resonance frequency. It is also possible to monitor the current flowing through the load (resonance circuit) or the output terminal of the high-frequency power supply, and extract components other than the resonance frequency from the detected value. When the current other than the resonance frequency is large, it is determined to be abnormal.
異常檢測器亦可依據發射後高頻電源的輸入電壓的下降幅度來判定異常。若雷射正常發光,則儲存在直流電源的輸出電容器(電容器組)之電荷被放電,直流電壓下降。因此,監視電容器組的電壓,電壓下降幅度小時,能夠判定為異常。The abnormality detector can also determine the abnormality based on the drop range of the input voltage of the high-frequency power supply after transmission. If the laser emits normally, the charge stored in the output capacitor (capacitor bank) of the DC power supply is discharged and the DC voltage drops. Therefore, by monitoring the voltage of the capacitor bank, if the voltage drop width is small, it can be judged as abnormal.
異常檢測器亦可依據比共振頻率高頻率的干擾來判定異常。電流成為高頻時,高頻的輻射干擾或傳導干擾增加。利用天線檢測該干擾,當增加了干擾時,能夠判定為異常。The anomaly detector can also determine anomalies based on interference at a frequency higher than the resonance frequency. When the current becomes a high frequency, high-frequency radiation interference or conduction interference increases. The antenna is used to detect the interference, and when the interference increases, it can be judged as abnormal.
異常檢測器亦可依據一對放電電極之間的電壓來判定異常。雖然施加有高頻電壓,但在共振電路的兩端之間未檢測到充分的電壓時,能夠判定為異常。The abnormality detector can also determine abnormality based on the voltage between a pair of discharge electrodes. Although a high-frequency voltage is applied, when a sufficient voltage is not detected between both ends of the resonance circuit, it can be judged as abnormal.
根據實施方式,使用具體的語句對本發明進行了說明,但實施方式僅表示本發明的原理、應用的一方面,實施方式中,在不脫離技術方案中規定之本發明的思想之範圍內,允許多個變形例或配置的變更。According to the embodiment, the present invention has been described using specific sentences, but the embodiment only represents one aspect of the principle and application of the present invention. In the embodiment, within the scope of the idea of the present invention specified in the technical solution, it is allowed Multiple modifications or configuration changes.
100:雷射裝置
200:雷射共振器
202、204:放電電極
206:全反射鏡
208:部分反射鏡
210:共振電路
250:電源裝置
300:直流電源
302:電容器組
304:充電電路
400:高頻電源
402:H橋接電路
404:升壓變壓器
500:過電壓抑制電路
502:氣體避雷器
504:變阻器
600:異常檢測器
610:通知機構100: Laser device
200:
圖1為雷射裝置的方塊圖。 圖2為有關實施方式之雷射裝置的方塊圖。 圖3中,圖3(a)、圖3(b)為表示異常檢測器的構成例之電路圖。 圖4中,圖4(a)~圖4(d)為表示過電壓抑制電路的構成例之電路圖。 圖5為表示電源裝置的具體的構成例之電路圖。 圖6為表示具備雷射裝置之雷射加工裝置之圖。 圖7中,圖7(a)、圖7(b)為表示過電壓抑制電路的配置的變形例之圖。Figure 1 is a block diagram of the laser device. Fig. 2 is a block diagram of a laser device according to an embodiment. In Fig. 3, Figs. 3(a) and 3(b) are circuit diagrams showing configuration examples of an abnormality detector. In Fig. 4, Figs. 4(a) to 4(d) are circuit diagrams showing configuration examples of an overvoltage suppression circuit. Fig. 5 is a circuit diagram showing a specific configuration example of the power supply device. Fig. 6 is a diagram showing a laser processing device equipped with a laser device. In Fig. 7, Figs. 7(a) and 7(b) are diagrams showing modified examples of the arrangement of the overvoltage suppression circuit.
200:雷射共振器 200: Laser resonator
202、204:放電電極 202, 204: discharge electrode
210:共振電路 210: Resonance circuit
250:電源裝置 250: power supply unit
300:直流電源 300: DC power supply
310:DC鏈 310: DC chain
400:高頻電源 400: high frequency power supply
402:H橋接電路 402: H bridge circuit
404:升壓變壓器 404: step-up transformer
500:過電壓抑制電路 500: Overvoltage suppression circuit
600:異常檢測器 600: Anomaly Detector
610:通知機構 610: Notifying Agency
C:電容 C: Capacitance
L:電感 L: Inductance
R:電阻成分 R: Resistance component
SABN:異常檢測訊號 S ABN : Abnormal detection signal
SW1:開關 SW1: switch
VDC:直流電壓(DC鏈電壓) V DC : DC voltage (DC link voltage)
VRF:高頻電壓 V RF : high frequency voltage
Claims (5)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018216527A JP2020088031A (en) | 2018-11-19 | 2018-11-19 | Power supply for laser device |
| JP2018-216527 | 2018-11-19 |
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| Publication Number | Publication Date |
|---|---|
| TW202027390A TW202027390A (en) | 2020-07-16 |
| TWI733215B true TWI733215B (en) | 2021-07-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108137172A TWI733215B (en) | 2018-11-19 | 2019-10-16 | Power supply device for laser device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2020088031A (en) |
| KR (1) | KR20200058283A (en) |
| CN (1) | CN111200354A (en) |
| TW (1) | TWI733215B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2023166674A (en) * | 2022-05-10 | 2023-11-22 | 住友重機械工業株式会社 | Power supply device and laser device |
| JP7679042B1 (en) | 2023-11-24 | 2025-05-19 | ユニークチップス合同会社 | Electrical resistance measuring device, Hall effect measuring device, and semiconductor characteristic measuring device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09129953A (en) * | 1995-11-06 | 1997-05-16 | Mitsubishi Electric Corp | Power supply for laser |
| TW200701578A (en) * | 2005-06-22 | 2007-01-01 | Cheng Ching Tzu | Laser power source apparatus |
| JP2017069561A (en) * | 2015-09-29 | 2017-04-06 | パナソニックIpマネジメント株式会社 | Gas laser oscillation device |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01302882A (en) * | 1988-05-31 | 1989-12-06 | Mitsubishi Electric Corp | Power supply for pulsed discharge laser |
| JPH0739166A (en) * | 1993-07-26 | 1995-02-07 | Toshiba Corp | High frequency power supply and laser oscillator |
| JPH07162067A (en) * | 1993-12-02 | 1995-06-23 | Mitsubishi Electric Corp | Laser device and laser discharge tube |
| JP5093181B2 (en) * | 2009-04-13 | 2012-12-05 | 三菱電機株式会社 | Gas laser oscillator |
| JP2011233659A (en) * | 2010-04-27 | 2011-11-17 | Panasonic Corp | Laser oscillation device and laser beam machine |
| JP5920870B2 (en) * | 2011-11-02 | 2016-05-18 | 株式会社アマダミヤチ | Laser power supply |
| JP5972603B2 (en) * | 2012-02-24 | 2016-08-17 | 東芝Itコントロールシステム株式会社 | Laser power supply device and control method thereof |
| JP6184798B2 (en) | 2013-08-05 | 2017-08-23 | 住友重機械工業株式会社 | Gas laser device, pulse laser beam output method, and laser processing apparatus |
| CN105594307B (en) * | 2013-10-04 | 2018-09-28 | 东芝三菱电机产业系统株式会社 | power supply unit |
| KR20180039032A (en) | 2018-03-23 | 2018-04-17 | 주식회사 진흥테크 | unmanned aerial vehicle and charging station for unmanned aerial vehicle |
-
2018
- 2018-11-19 JP JP2018216527A patent/JP2020088031A/en active Pending
-
2019
- 2019-10-14 KR KR1020190127041A patent/KR20200058283A/en not_active Withdrawn
- 2019-10-16 TW TW108137172A patent/TWI733215B/en active
- 2019-10-17 CN CN201910987814.1A patent/CN111200354A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09129953A (en) * | 1995-11-06 | 1997-05-16 | Mitsubishi Electric Corp | Power supply for laser |
| TW200701578A (en) * | 2005-06-22 | 2007-01-01 | Cheng Ching Tzu | Laser power source apparatus |
| JP2017069561A (en) * | 2015-09-29 | 2017-04-06 | パナソニックIpマネジメント株式会社 | Gas laser oscillation device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111200354A (en) | 2020-05-26 |
| JP2020088031A (en) | 2020-06-04 |
| TW202027390A (en) | 2020-07-16 |
| KR20200058283A (en) | 2020-05-27 |
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