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JP2019039074A - 透明導電膜用スパッタリングターゲット - Google Patents

透明導電膜用スパッタリングターゲット Download PDF

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Publication number
JP2019039074A
JP2019039074A JP2018190746A JP2018190746A JP2019039074A JP 2019039074 A JP2019039074 A JP 2019039074A JP 2018190746 A JP2018190746 A JP 2018190746A JP 2018190746 A JP2018190746 A JP 2018190746A JP 2019039074 A JP2019039074 A JP 2019039074A
Authority
JP
Japan
Prior art keywords
conductive film
transparent conductive
mass
sputtering target
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2018190746A
Other languages
English (en)
Japanese (ja)
Inventor
矢野　智泰
Tomoyasu Yano
智泰 矢野
寿博 児平
Toshihiro Kodaira
寿博 児平
伸一 立山
Shinichi Tateyama
伸一 立山
信一郎 中村
Shinichiro Nakamura
信一郎 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Kinzoku Co Ltd
Original Assignee
Mitsui Mining and Smelting Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining and Smelting Co Ltd filed Critical Mitsui Mining and Smelting Co Ltd
Publication of JP2019039074A publication Critical patent/JP2019039074A/ja
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Structural Engineering (AREA)
  • Physical Vapour Deposition (AREA)
JP2018190746A 2017-05-15 2018-10-09 透明導電膜用スパッタリングターゲット Pending JP2019039074A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017096386 2017-05-15
JP2017096386 2017-05-15

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2018535449A Division JP6419397B1 (ja) 2017-05-15 2018-03-08 透明導電膜用スパッタリングターゲット

Publications (1)

Publication Number Publication Date
JP2019039074A true JP2019039074A (ja) 2019-03-14

Family

ID=64273695

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018190746A Pending JP2019039074A (ja) 2017-05-15 2018-10-09 透明導電膜用スパッタリングターゲット

Country Status (5)

Country Link
JP (1) JP2019039074A (zh)
KR (1) KR102268160B1 (zh)
CN (1) CN110546299B (zh)
TW (1) TWI710650B (zh)
WO (1) WO2018211793A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102739907B1 (ko) * 2020-12-28 2024-12-05 엘지디스플레이 주식회사 컬러필터 기판 및 이를 포함하는 인셀 터치방식 디스플레이 장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62202415A (ja) * 1984-12-06 1987-09-07 三井金属鉱業株式会社 酸化インジウム系透明導電膜の製造法
JP2003277921A (ja) * 2002-03-19 2003-10-02 Nikko Materials Co Ltd 高抵抗透明導電性膜用スパッタリングターゲット
JP2005135649A (ja) * 2003-10-28 2005-05-26 Mitsui Mining & Smelting Co Ltd 酸化インジウム系透明導電膜及びその製造方法
JP2007055841A (ja) * 2005-08-24 2007-03-08 Sumitomo Metal Mining Co Ltd 酸化物焼結体及びその製造方法、酸化物焼結体を用いて得られる非晶質酸化物膜、並びにその非晶質酸化物膜を含む積層体

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2416157A1 (fr) 1978-02-06 1979-08-31 Huret Roger Derailleur pour cycle
JPS6410507A (en) * 1987-07-02 1989-01-13 Optrex Kk Transparent conductive film and its manufacture
US5433901A (en) * 1993-02-11 1995-07-18 Vesuvius Crucible Company Method of manufacturing an ITO sintered body
TW570909B (en) * 2001-06-26 2004-01-11 Mitsui Mining & Smelting Co Sputtering target for forming transparent conductive film of high electric resistance and method for producing transparent conductive film of high electric resistance
JP4424889B2 (ja) 2001-06-26 2010-03-03 三井金属鉱業株式会社 高抵抗透明導電膜用スパッタリングターゲット及び高抵抗透明導電膜の製造方法
JP4175071B2 (ja) * 2002-10-04 2008-11-05 住友金属鉱山株式会社 酸化物焼結体およびスパッタリングターゲット
JP2007176706A (ja) * 2005-12-26 2007-07-12 Mitsui Mining & Smelting Co Ltd 酸化物焼結体及びその製造方法並びにスパッタリングターゲット及び透明導電膜
KR20170005149A (ko) * 2009-11-19 2017-01-11 가부시키가이샤 아루박 투명 도전막의 제조 방법, 스퍼터링 장치 및 스퍼터링 타겟
JP5339100B2 (ja) * 2011-09-22 2013-11-13 住友金属鉱山株式会社 Ｚｎ−Ｓｉ−Ｏ系酸化物焼結体とその製造方法およびスパッタリングターゲットと蒸着用タブレット
JP5855948B2 (ja) * 2012-01-12 2016-02-09 ジオマテック株式会社 透明導電膜，透明導電膜付き基板，ｉｐｓ液晶セル，静電容量型タッチパネル及び透明導電膜付き基板の製造方法
JP2015013778A (ja) * 2013-07-05 2015-01-22 住友金属鉱山株式会社 酸化物焼結体及びその製造方法、並びに酸化物膜
JP6149804B2 (ja) * 2014-05-30 2017-06-21 住友金属鉱山株式会社 酸化物焼結体及びその製造方法
JP6277977B2 (ja) * 2015-02-27 2018-02-14 住友金属鉱山株式会社 酸化物焼結体、スパッタリング用ターゲット、及びそれを用いて得られる酸化物半導体薄膜

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62202415A (ja) * 1984-12-06 1987-09-07 三井金属鉱業株式会社 酸化インジウム系透明導電膜の製造法
JP2003277921A (ja) * 2002-03-19 2003-10-02 Nikko Materials Co Ltd 高抵抗透明導電性膜用スパッタリングターゲット
JP2005135649A (ja) * 2003-10-28 2005-05-26 Mitsui Mining & Smelting Co Ltd 酸化インジウム系透明導電膜及びその製造方法
JP2007055841A (ja) * 2005-08-24 2007-03-08 Sumitomo Metal Mining Co Ltd 酸化物焼結体及びその製造方法、酸化物焼結体を用いて得られる非晶質酸化物膜、並びにその非晶質酸化物膜を含む積層体

Also Published As

Publication number Publication date
WO2018211793A1 (ja) 2018-11-22
TWI710650B (zh) 2020-11-21
CN110546299B (zh) 2022-09-30
KR102268160B1 (ko) 2021-06-21
CN110546299A (zh) 2019-12-06
KR20190134779A (ko) 2019-12-04
TW201900904A (zh) 2019-01-01

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