JP2018101784A - Substrate with thin film capacitor sheet - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate with a thin film capacitor sheet which can prevent damage of a thin film capacitor.SOLUTION: A substrate 1 with a thin film capacitor sheet has: a support substrate 10; an adhesive layer 30 provided on the support substrate 10; and a thin film capacitor sheet 20 laminated on the adhesive layer 30. The thin film capacitor sheet 20 has: one or more capacitor parts 25; a frame part 26 which encloses the one or more capacitor parts 25 at the outer side of the capacitor part 25; and slits 27, each of which is provided at an entire periphery of each of the one or more capacitor parts 25 and has an opening on a surface opposite to a surface contacting with the adhesive layer 30. Each capacitor part 25 includes: a first electrode layer 21 and a second electrode layer 22 which are a pair of electrode layers and a dielectric layer 23 sandwiched between the pair of electrode layers.SELECTED DRAWING: Figure 2

Description

  The present invention relates to a substrate with a thin film capacitor sheet.

  Conventionally, a sheet in which a plurality of circuit boards are integrated is known. Patent Documents 1 and 2 describe a reproduction method when a defective product is included in a circuit board constituting a sheet (strip) in which a plurality of circuit boards are arranged.

Japanese Patent Laid-Open No. 10-247656 Japanese Patent Laid-Open No. 11-307905

  However, thin film capacitors manufactured in accordance with recent thin film formation also have a demand for sheet formation similar to the sheets described in Patent Documents 1 and 2. However, since a thin film capacitor is much thinner than a conventional circuit board, it is difficult to handle it as a single sheet. Even if sheeting is achieved, the thin film capacitor may be damaged by external force.

  The present invention has been made in view of the above, and an object of the present invention is to provide a substrate with a thin film capacitor sheet that can prevent the thin film capacitor from being damaged.

  In order to achieve the above object, a substrate with a thin film capacitor sheet according to the present invention includes a support substrate, an adhesive layer provided on the support substrate, and a thin film capacitor sheet laminated on the adhesive layer. The thin film capacitor sheet is provided on the entire periphery of each of the one or more capacitor portions, a frame portion surrounding the one or more capacitor portions outside the capacitor portion, and the one or more capacitor portions, A slit having an opening on a surface opposite to the surface in contact with the adhesive layer, and the capacitor portion includes a pair of electrode layers and a dielectric layer sandwiched between the pair of electrode layers And having.

  According to the above substrate with a thin film capacitor sheet, since the thin film capacitor sheet having the capacitor portion is provided on the support substrate, the rigidity is increased and the handleability is improved. In addition, regarding the force from the outside, for example, the force from the outside is provided with the frame portion so as to surround the capacitor portion, so that the capacitor portion can be prevented from receiving the force in the lateral direction directly. . When a vertical external force is received from the support substrate side, it is transmitted to the thin film capacitor sheet via the adhesive layer, so that the force received by the capacitor portion can be suppressed. Furthermore, even when stress is applied to the thin film capacitor sheet or the support substrate, the stress applied to the capacitor portion can be reduced by providing the slit. For this reason, according to said board | substrate with a thin film capacitor sheet, damage to the capacitor | condenser part which functions as a thin film capacitor can be prevented.

  Here, a part of said slit can be made into the aspect penetrated the electrode layer on the side spaced apart from the said support substrate among a pair of said electrode layers.

  As described above, by allowing the slit to penetrate the electrode layer on the side away from the support substrate, it is possible to suppress the propagation of stress in the thin film capacitor sheet and reduce the stress applied to the capacitor portion. can do.

  In addition, a part of the slit may penetrate the pair of electrode layers and the dielectric layer.

  As described above, since the slit penetrates the pair of electrode layers and the dielectric layer, the propagation of stress in the thin film capacitor sheet can be further suppressed, and the stress applied to the capacitor portion is reduced. Can do.

  Moreover, the width | variety of the said slit can be made into the aspect which is 50 micrometers-5000 micrometers in the surface on the opposite side to the surface which is in contact with the said contact bonding layer in the said thin film capacitor sheet.

  By setting the width of the slit in the above range, the yield and manufacturing efficiency of the capacitor portion adjacent to the slit can be suitably maintained.

  In addition, the slit has a shape in which the width of the thin film capacitor sheet is wide on a surface opposite to the surface in contact with the adhesive layer, and the width of the slit is narrowed at the bottom of the slit. In the bottom portion, the width may be 50 μm or more.

  As described above, even when the width of the slit becomes narrow at the bottom, the yield of the capacitor portion can be made favorable by setting the width of the bottom to 50 μm or more.

  ADVANTAGE OF THE INVENTION According to this invention, the board | substrate with a thin film capacitor sheet which can prevent damage to a thin film capacitor at the time of conveyance is provided.

It is a top view of the board | substrate with a thin film capacitor sheet which concerns on one Embodiment of this invention. It is II-II sectional drawing of FIG. 1, and is a figure which shows the laminated structure of each layer in a board | substrate with a thin film capacitor sheet. It is a flowchart explaining the manufacturing method of a board | substrate with a thin film capacitor sheet. It is a figure explaining the modification of a slit. It is a figure explaining the modification of arrangement | positioning and a shape of a capacitor | condenser part and a frame part.

  DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments for carrying out the present invention will be described in detail with reference to the accompanying drawings. In the description of the drawings, the same elements are denoted by the same reference numerals, and redundant description is omitted.

  FIG. 1 is a plan view of a substrate with a thin film capacitor sheet according to an embodiment of the present invention. FIG. 2 is a cross-sectional view taken along the line II-II in FIG. 1 and shows a laminated structure of each layer in the substrate with a thin film capacitor sheet. As shown in FIGS. 1 and 2 described in the present embodiment, the substrate 1 with a thin film capacitor sheet includes a support substrate 10 and a thin film capacitor sheet 20 mounted on the support substrate 10. The thin film capacitor sheet 20 is mounted on the support substrate 10 via the adhesive layer 30. The substrate 1 with a thin film capacitor sheet is obtained by attaching a thin film capacitor sheet 20 to a support substrate 10. For example, when a thin film capacitor is transported before manufacturing an electronic component using the thin film capacitor, it is transported in the form of the substrate 1 with the thin film capacitor sheet. The thin film capacitor sheet 20 is a sheet including one or more capacitor portions that function as a thin film capacitor. When the capacitor portion is used as a thin film capacitor, the capacitor portion may be cut out from the thin film capacitor sheet 20 or may be used without being cut out from the thin film capacitor sheet 20. In either case, the support substrate 10 may be used after being detached, or may be used together with the support substrate 10.

  The support substrate 10 is a substrate for supporting the thin film capacitor sheet 20. The material of the support substrate 10 is not particularly limited. For example, a known material such as a glass epoxy resin substrate, a silicon substrate, or an organic substrate such as a BT (bismaleimide triazine) resin can be used. The thickness of the support substrate 10 is not particularly limited as long as the rigidity as the substrate is sufficiently maintained, but can be, for example, about 1 mm to several cm.

  The support substrate 10 is provided with an alignment mark 11 made of a through hole in a region where the thin film capacitor sheet 20 is not mounted (see FIG. 2). The alignment mark 11 can be used as a hole for positioning when the thin film capacitor sheet 20 is mounted on the support substrate 10. When the alignment mark 11 is used to mount the thin film capacitor sheet 20 on the support substrate 10, the positioning accuracy can be increased. The alignment mark 11 may not be provided.

  When viewed in the thickness direction, the thin film capacitor sheet 20 mounted on the support substrate 10 includes a first electrode layer 21 and a second electrode layer 22 that are a pair of electrode layers, and a dielectric sandwiched between the pair of electrode layers. And a body layer 23. The thin film capacitor sheet 20 includes one or more capacitor portions 25 and a frame portion 26 provided so as to surround the capacitor portions 25.

  Three layers constituting the thin film capacitor sheet 20 will be described. The three layers are selected so that the capacitor unit 25 can perform a desired function.

  As materials for the first electrode layer 21 and the second electrode layer 22, the main components are tantalum (Ta), nickel (Ni), copper (Cu), tungsten (W), platinum (Pt), palladium (Pd), iridium. (Ir), ruthenium (Ru), rhodium (Rh), an alloy containing these metals, or a material that is an intermetallic compound is preferably used, but is not limited thereto. Note that each electrode layer may contain a trace amount of impurities in addition to the main component material. The combination of the materials of the first electrode layer 21 and the second electrode layer 22 is not particularly limited. For example, the main component of the first electrode layer 21 can be Cu and the main component of the second electrode layer 22 can be Ni. . Note that the term “main component” means that the proportion of the component is 50% by mass or more, but if any component is 50% by mass or less, the component with the highest content is the main component. That is.

The dielectric layer 23 is made of a perovskite dielectric material. Here, as the perovskite-based dielectric material in the present embodiment, BaTiO ₃ (barium titanate), (Ba _1-X Sr _X ) TiO ₃ (barium strontium titanate), (Ba _1-X Ca _X ) TiO 3. ₃ , PbTiO ₃ , Pb (Zr _X Ti _1-X ) O _{3 and} other (strong) dielectric materials having a perovskite structure, and composites represented by Pb (Mg _1/3 Nb _2/3 ) O ₃ Perovskite relaxor type ferroelectric materials and the like are included. Here, in the above-described perovskite structure and perovskite relaxor type ferroelectric material, the ratio of A site to B site is usually an integer ratio, but may be intentionally shifted from the integer ratio in order to improve characteristics. In order to control the characteristics of the dielectric layer 13, the dielectric layer 13 may appropriately contain an additive substance as a subcomponent.

  The thin film capacitor sheet 20 of the present embodiment is provided with eight (2 × 4) capacitor portions 25 as shown in FIG. Further, slits 27 are formed between the adjacent capacitor portions 25 and between the capacitor portion 25 and the frame portion 26. The slit 27 is formed so as to open on the upper surface of the thin film capacitor sheet 20, that is, the surface opposite to the surface (lower surface) in contact with the adhesive layer 30.

  In the capacitor part 25, a wiring part 251 for having a desired function and a groove 252 surrounding the wiring part 251 are formed in the first electrode layer 21. In FIG. 1, the wiring portion 251 is not shown. The groove 252 is provided to separate the first electrode layer 21 around the slit 27 from the first electrode layer 21 on the wiring portion 251 side. The capacitor unit 25 may be a square having a side of 0.3 mm to 3 mm, for example, but the size and shape of the capacitor unit 25 are not particularly limited.

  The slit 27 is provided over the entire circumference of each capacitor unit 25. Further, as shown in FIG. 2, the slit 27 is formed so as to penetrate the first electrode layer 21 in the thickness direction (lamination direction of the three layers). In FIG. 2, the slit 27 is not formed in the dielectric layer 23 and the second electrode layer 22, but the depth of the slit 27 can be changed as appropriate. Further, the depth of the slit 27 may be changed depending on the location. The width of the slit 27 is not particularly limited, but can be 50 μm to 5000 μm on the surface on the first electrode layer 21 side, that is, the surface opposite to the side in contact with the adhesive layer 30 in the thin film capacitor sheet 20. . If the width of the slit 27 is smaller than 50 μm, the slit width may be smaller than the design value when the step of providing the slit 27 is performed. In this case, it is conceivable that the yield of the capacitor unit 25 decreases. In addition, when the width of the slit 27 is larger than 5000 μm, the ratio of the area used as the slit 27 in the thin film capacitor sheet 20 is increased, and the manufacturing efficiency of the capacitor portion 25 may be reduced.

  In the capacitor part 25, the thicknesses of the first electrode layer 21 and the second electrode layer 22 are preferably 0.1 μm to 50 μm, more preferably 1 μm to 40 μm, and about 10 μm to 30 μm. Is more preferable. When the thickness of each electrode layer is too thin, it tends to be difficult to handle each electrode layer when manufacturing the thin film capacitor sheet. Moreover, when the thickness of each electrode layer is too thick, there exists a tendency for the adhesiveness of a dielectric material layer and an electrode layer to become low. Moreover, the thickness of the dielectric material layer 23 is 10 nm-1000 nm, for example.

  The frame portion 26 provided outside the capacitor portion 25 with the slit 27 interposed therebetween is not a region that is cut out like the capacitor portion 25 and used as a thin film capacitor. Therefore, the first electrode layer 21, the dielectric layer 23, and the second electrode layer 22 may not be stacked in this order. As shown in FIG. 1, the frame portion 26 provided on the outer periphery of the thin film capacitor sheet 20 may be manufactured in a state where, for example, the dielectric layer 23 does not reach the periphery when the thin film capacitor sheet 20 is manufactured. In this case, a region where the dielectric layer 23 is not laminated is included in a part of the frame portion 26. However, the frame portion 26 is a region where a function as a capacitor is not required, and functions as the frame portion 26. Can fully fulfill.

  The thin film capacitor sheet 20 is attached to the support substrate 10 via the adhesive layer 30. The adhesive layer 30 can fix the thin film capacitor sheet 20 to the support substrate 10, and when the capacitor portion 25 or the thin film capacitor sheet 20 is peeled from the support substrate 10, the thin film capacitor is used. It is required that the capacitor portion 25 included in the sheet 20 can be removed. In this case, the adhesive layer 30 needs to be able to detach the thin film capacitor sheet 20. The adhesive layer 30 preferably has elasticity in a state where the thin film capacitor sheet 20 is fixed to the support substrate 10. As the adhesive layer 30 having the above-described characteristics, for example, an adhesive layer having heat peelability can be used. Examples of the adhesive layer having heat release properties include Riva Alpha (trade name: manufactured by Nitto Denko Corporation), which is a heat release sheet for electronic component processes. Although the thickness of the contact bonding layer 30 is not specifically limited, It is suitably set according to the material etc. of the contact bonding layer 30 in the range which can exhibit said function.

  Next, the manufacturing method of said board | substrate 1 with a thin film capacitor sheet is demonstrated, referring FIG.

  First, the thin film capacitor sheet 20 is prepared (S01). The sheet prepared here is a sheet in a state where the first electrode layer 21, the dielectric layer 23, and the second electrode layer 22 are laminated in this order in a region corresponding to the capacitor unit 25, and the slit 27 is formed at this stage. It is not formed. The thin film capacitor sheet 20 is manufactured by laminating a dielectric layer 23 on a metal foil to be a second electrode layer 22 or a metal film formed on a substrate, and then forming a first electrode layer 21 thereon. Is done. A known method can be used as a method for producing the sheet. The wiring part 251 and the groove 252 of the first electrode layer 21 may be formed at this stage, or may be formed at the same time when a slit described later is formed.

  Next, the thin film capacitor sheet 20 is attached to the support substrate 10 (S02). First, after providing the adhesive layer 30 on the support substrate 10, the thin film capacitor sheet 20 is pasted on the adhesive layer 30.

  Next, the slit 27 is formed in the thin film capacitor sheet 20 (S03). Examples of the method for forming the slit 27 include a patterning method using a resist, but are not limited thereto. Note that the wiring portion 251 and the groove 252 of the first electrode layer 21 may be formed simultaneously with the formation of the slit 27. By forming the slit 27, the capacitor portion 25 and the frame portion 26 in the thin film capacitor sheet 20 are partitioned by the slit 27.

  Next, the inspection of the thin film capacitor piece and the non-defective product determination are performed (S04). Here, each piece refers to each of the capacitor portions 25 partitioned by the slits 27. By inspecting the capacitor portions 25 one by one, it is confirmed whether the capacitor portions 25 can exhibit the desired performance, and it is determined whether they are non-defective products or defective products.

  Thereafter, the thin film capacitor pieces determined to be defective are removed (S05). As a result of performing the non-defective / defective product determination for each of the capacitor portions 25 as described above, when a plurality of capacitor portions 25 are included in the thin film capacitor sheet 20, some of them may be determined as defective products. In this case, it is possible to remove only the capacitor portion 25 determined to be defective using the slit 27. When the capacitor part 25 is removed, the slit 27 around the capacitor part 25 to be removed is cut by a laser or the like so as to penetrate the thin film capacitor sheet 20 and reach the adhesive layer 30. Then, only the specific capacitor | condenser part 25 is removed from the thin film capacitor sheet 20 by changing the adhesiveness of the contact bonding layer 30. FIG.

  Two types of methods can be used as the subsequent steps. First, as a first method, a non-defective product (new good product) manufactured in another thin film capacitor sheet is mounted on a region (removal region) where the defective capacitor portion 25 is removed (S06). In this case, a good capacitor portion manufactured in another thin film capacitor sheet is cut out and pasted as a new good product in the removal region. Since the adhesive layer 30 is detachable from the thin film capacitor sheet, a new good product can be attached to the removal region. As a result, in the thin film capacitor sheet 20, all the capacitor portions 25 are in a non-defective state. As a result, the substrate 1 with the thin film capacitor sheet is also configured by only the good capacitor portion 25.

  As a second method, the thin film capacitor sheet 20 having a region (removal region) from which the defective capacitor portion 25 is removed is pasted to a substrate (new substrate) different from the support substrate 10 currently pasted. Method (S07). A new adhesive layer 30 is provided on the new support substrate 10, and the thin film capacitor sheet 20 is attached thereon. Thereafter, a non-defective product (new good product) manufactured in another thin film capacitor sheet is mounted on the region (removal region) from which the defective capacitor portion 25 is removed (S08). Even when this method is used, the support substrate 10 is changed to a new substrate, but in the thin film capacitor sheet 20, all the capacitor portions 25 are in a non-defective state. As a result, the substrate 1 with the thin film capacitor sheet is also configured by only the good capacitor portion 25.

  As described above, the thin film capacitor sheet-provided substrate 1 constituted only by the good capacitor portion 25 can be obtained regardless of which of the first method and the second method is employed.

  Note that the steps after the removal of defective products (S05) may not be performed. If the steps after the removal of the defective product are omitted, the substrate 1 with the thin film capacitor sheet remains even if the defective product is included, but the non-defective capacitor is obtained by the steps up to that time (S01 to S04). A structure is obtained in which the slit 27 is formed over the entire circumference of the portion 25 and the frame portion 26 is provided so as to surround the entire capacitor portion 25.

  In addition, since the capacitor | condenser part 25 is made into a state which can be removed by laser processing etc. at the time of replacement | exchange with a good product and a defective product, as shown to FIG. 4 (A), the slit 27A is 1st electrode layer 21, dielectric The shape penetrates through the body layer 23 and the second electrode layer 22.

  As described above, the depth of the slit is not particularly limited. However, when the depth penetrates only the first electrode layer 21 as in the slit 27 shown in FIG. Since the part 26 and the capacitor part 25 are partially connected, the rigidity is increased in that part. Further, when the slit 27 has such a depth as to penetrate the first electrode layer 21, the stress can be relaxed suitably. On the other hand, as shown in FIG. 4A, when the slit 27A has a shape penetrating the first electrode layer 21, the dielectric layer 23, and the second electrode layer 22, the capacitor portion 25 surrounded by the slit 27A. Can be detached from the substrate 1 with a thin film capacitor sheet, and as described above, it is easy to replace a good product with a defective product. In addition, since the capacitor portion 25 surrounded by the slit 27A is separated from the other surrounding capacitor portions 25 and the frame portion 26 in the thin film capacitor sheet 20, the capacitor portions 25 and the frame portions 26 are separated from each other. Stress propagation can be suppressed.

  The depth of the slit may be different for each region. For example, as described above, when the defective capacitor portion 25 is replaced with a non-defective product, the slit 1 is shallow in the substrate 1 with the thin film capacitor sheet after manufacture (through only the first electrode layer 21). And a portion where the slits are deep (all penetrates up to the second electrode layer 22). Thus, the depth of the slit may vary depending on the location.

  The slit 27B shown in FIG. 4B is different from the slits 27 and 27A in the distribution of the slit width in the depth direction (thickness direction of the thin film capacitor sheet 20). In the slits 27 and 27A, the slit width is uniform in the opening portion on the surface and the bottom portion of the slit. On the other hand, the slit 27B is a slit having a substantially trapezoidal cross section in which the slit width of the opening portion is wide and the width decreases toward the bottom. Depending on the slit processing method, the width may be narrow at the bottom of the slit as described above. In such a case, the yield of the capacitor portion 25 adjacent to the slit 27B can be suitably maintained by setting the slit width at the bottom to be 50 μm or more. The slit 27B also penetrates the dielectric layer 23 and the second electrode layer 22, but the slit that penetrates only the first electrode layer 21 like the slit 27 has a structure in which the bottom width is narrowed. May be.

  FIG. 5 is a modified example of the arrangement of the frame portion 26 and corresponds to FIG. In the substrate 1 with a thin film capacitor sheet in FIG. 1, a frame portion 26 is provided so as to integrally surround the periphery of eight (2 × 4) capacitor portions 25. On the other hand, in the substrate 1A with a thin film capacitor sheet of FIG. 5, the eight (2 × 4) capacitor portions 25 are arranged apart from each other. A frame portion 26 is provided between adjacent capacitor portions 25 and around the whole of eight (2 × 4) capacitor portions 25. Thus, the shape and arrangement of the frame portion 26 can be changed as appropriate. Moreover, the slit 27 should just be provided in the perimeter of each capacitor | condenser part 25 so that the adjacent capacitor | condenser parts 25 may be partitioned off and so that the capacitor | condenser part 25 and the frame part 26 may be partitioned off.

  Thus, in the board | substrate 1 with a thin film capacitor sheet which concerns on this embodiment, the thin film capacitor sheet 20 which has the capacitor | condenser part 25 is provided on the support substrate 10. FIG. For this reason, rigidity is improved and the handleability of the capacitor which is difficult to handle due to the thin film is improved. Further, among the external forces, for example, the force from the lateral direction (the extending direction of the main surface of the support substrate 10 and the thin film capacitor sheet 20) is a frame portion so as to surround the capacitor portion 25 of the thin film capacitor sheet 20. By providing 26, it can suppress that the capacitor | condenser part 25 receives direct force. In addition, when an external force in the vertical direction (thickness direction) is received from the support substrate 10 side, it is transmitted to the thin film capacitor sheet 20 via the adhesive layer 30, so that the force received by the capacitor unit 25 is suppressed. can do. Further, even when stress is applied to the thin film capacitor sheet 20 or the support substrate 10, since the slit 27 can relieve stress by the slit 27, the stress is applied to the capacitor unit 25. Stress can be reduced. For this reason, according to said board | substrate 1 with a thin film capacitor sheet, damage to the capacitor | condenser part 25 which functions as a thin film capacitor can be prevented.

  Moreover, in said board | substrate 1 with a thin film capacitor sheet, it has the aspect which the slit 27 penetrates the 1st electrode layer 21 which is an electrode layer in the side spaced apart from the support substrate. By setting it as such a structure, propagation of the stress in the thin film capacitor sheet 20 can be suppressed suitably. Therefore, the stress applied to the capacitor unit 25 can be reduced.

  4A, the slit 27A penetrates all of the first electrode layer 21 and the second electrode layer 22, which are a pair of electrode layers, and the dielectric layer 23, so that the thin film The propagation of stress in the capacitor sheet 20 can be further suppressed, and the stress applied to the capacitor portion can be reduced.

  When the width of the slit 27 is 50 μm to 5000 μm as in the substrate 1 with a thin film capacitor sheet, the yield and manufacturing efficiency of the capacitor unit 25 adjacent to the slit 27 can be suitably maintained.

  Furthermore, as shown in FIG. 4B, when the width of the slit 27B becomes narrow at the bottom, the yield of the capacitor portion 25 can be improved by setting the slit width at the bottom to 50 μm or more. .

  Further, as shown in FIGS. 4A and 4B, a slit that penetrates only the first electrode layer 21 can be provided to adjust the area of the capacitor portion 25. This slit has a function of separating the first electrode layer 21 around the slit 27 and the first electrode layer 21 on the wiring portion 251 side, similarly to the groove 252 shown in FIGS. In addition to the groove 252, a slit for adjusting the area of the capacitor portion 25 may be provided.

  As mentioned above, although embodiment of this invention has been described, this invention is not necessarily limited to embodiment mentioned above, A various change is possible in the range which does not deviate from the summary.

  For example, the number, shape, and arrangement of the capacitor portions 25 included in the substrate 1 with a thin film capacitor sheet described in the above embodiment may be one or more, and can be changed as appropriate. Further, the frame portion 26 is appropriately set according to the shape of the capacitor portion 25 and the like. Moreover, although the thin film capacitor sheet 20 demonstrated the example in which the 1st electrode layer 21, the dielectric material layer 23, and the 2nd electrode layer 22 were laminated | stacked in this order from the top, the lamination | stacking number of each layer in the thin film capacitor sheet 20 is changed suitably. can do. Furthermore, the thin film capacitor sheet 20 may be attached to only one surface of the support substrate 10 or may be attached to both surfaces of the support substrate 10.

  DESCRIPTION OF SYMBOLS 1,1A ... Substrate with thin film capacitor sheet, 10 ... Support substrate, 11 ... Alignment mark, 20 ... Thin film capacitor sheet, 21 ... First electrode layer, 22 ... Second electrode layer, 23 ... Dielectric layer, 25 ... Capacitor part , 26 ... frame part, 27, 27A, 27B ... slit, 30 ... adhesive layer.

Claims (5)

A support substrate, an adhesive layer provided on the support substrate, and a thin film capacitor sheet laminated on the adhesive layer,
The thin film capacitor sheet is provided on the entire periphery of each of the one or more capacitor portions, a frame portion surrounding the one or more capacitor portions outside the capacitor portion, and the one or more capacitor portions, A slit having an opening on the surface opposite to the surface in contact with the adhesive layer,
The capacitor part is a substrate with a thin film capacitor sheet having a pair of electrode layers and a dielectric layer sandwiched between the pair of electrode layers.   2. The substrate with a thin film capacitor sheet according to claim 1, wherein a part of the slit penetrates an electrode layer on a side separated from the support substrate in the pair of electrode layers.   The substrate with a thin film capacitor sheet according to claim 1 or 2, wherein a part of the slit penetrates the pair of electrode layers and the dielectric layer.   The width | variety of the said slit is 50 micrometers-5000 micrometers in the surface on the opposite side to the surface which is in contact with the said contact bonding layer in the said thin film capacitor sheet, The thin film capacitor sheet as described in any one of Claims 1-3 substrate. The slit has a shape whose width is wide on a surface opposite to the surface in contact with the adhesive layer in the thin film capacitor sheet, and whose width is narrow at the bottom of the slit,
The board | substrate with a thin film capacitor sheet as described in any one of Claims 1-4 whose width | variety is 50 micrometers or more in the bottom part of the said slit.

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