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JP2018182305A - 薄膜トランジスタ基板、液晶表示素子、有機ｅｌ素子、感放射線性樹脂組成物および薄膜トランジスタ基板の製造方法 - Google Patents

薄膜トランジスタ基板、液晶表示素子、有機ｅｌ素子、感放射線性樹脂組成物および薄膜トランジスタ基板の製造方法 Download PDF

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Publication number
JP2018182305A
JP2018182305A JP2018026497A JP2018026497A JP2018182305A JP 2018182305 A JP2018182305 A JP 2018182305A JP 2018026497 A JP2018026497 A JP 2018026497A JP 2018026497 A JP2018026497 A JP 2018026497A JP 2018182305 A JP2018182305 A JP 2018182305A
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JP
Japan
Prior art keywords
film transistor
thin film
substrate
insulating film
interlayer insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2018026497A
Other languages
English (en)
Japanese (ja)
Inventor
隆太郎 若林
Ryutaro Wakabayashi
隆太郎 若林
亮平 倉田
Ryohei Kurata
亮平 倉田
時生 三村
Tokio Mimura
時生 三村
晃久 本田
Akihisa Honda
晃久 本田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JSR Corp filed Critical JSR Corp
Priority to KR1020180032028A priority Critical patent/KR102482590B1/ko
Priority to CN201810268393.2A priority patent/CN108732831B/zh
Priority to TW107111091A priority patent/TWI816665B/zh
Publication of JP2018182305A publication Critical patent/JP2018182305A/ja
Pending legal-status Critical Current

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  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Materials For Photolithography (AREA)
  • Silicon Polymers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electroluminescent Light Sources (AREA)
JP2018026497A 2017-04-17 2018-02-16 薄膜トランジスタ基板、液晶表示素子、有機ｅｌ素子、感放射線性樹脂組成物および薄膜トランジスタ基板の製造方法 Pending JP2018182305A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020180032028A KR102482590B1 (ko) 2017-04-17 2018-03-20 박막 트랜지스터 기판, 액정 표시 소자, 유기 el 소자, 감방사선성 수지 조성물 및 박막 트랜지스터 기판의 제조 방법
CN201810268393.2A CN108732831B (zh) 2017-04-17 2018-03-28 树脂组合物、包括其的基板、元件及其制造方法
TW107111091A TWI816665B (zh) 2017-04-17 2018-03-30 薄膜電晶體基板、液晶顯示元件、有機el元件、感放射線性樹脂組成物及薄膜電晶體基板的製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017081671 2017-04-17
JP2017081671 2017-04-17

Publications (1)

Publication Number Publication Date
JP2018182305A true JP2018182305A (ja) 2018-11-15

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JP2018026497A Pending JP2018182305A (ja) 2017-04-17 2018-02-16 薄膜トランジスタ基板、液晶表示素子、有機ｅｌ素子、感放射線性樹脂組成物および薄膜トランジスタ基板の製造方法

Country Status (2)

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JP (1) JP2018182305A (zh)
TW (1) TWI816665B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019026693A (ja) * 2017-07-27 2019-02-21 東レ・ファインケミカル株式会社 シリコーン重合体組成物およびその製造方法
JP7397419B1 (ja) 2023-06-02 2023-12-13 Jsr株式会社 感放射線性組成物、硬化膜及びその製造方法、半導体素子並びに表示素子

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI890521B (zh) * 2018-11-21 2025-07-11 日商索尼半導體解決方案公司 固體攝像元件

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101517487B (zh) * 2006-09-25 2012-08-08 日立化成工业株式会社 放射线敏感性组合物、二氧化硅系覆膜的形成方法、二氧化硅系覆膜、具有二氧化硅系覆膜的装置和部件以及绝缘膜用感光剂
US8921858B2 (en) * 2007-06-29 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019026693A (ja) * 2017-07-27 2019-02-21 東レ・ファインケミカル株式会社 シリコーン重合体組成物およびその製造方法
JP7397419B1 (ja) 2023-06-02 2023-12-13 Jsr株式会社 感放射線性組成物、硬化膜及びその製造方法、半導体素子並びに表示素子
JP2024173228A (ja) * 2023-06-02 2024-12-12 Jsr株式会社 感放射線性組成物、硬化膜及びその製造方法、半導体素子並びに表示素子

Also Published As

Publication number Publication date
TWI816665B (zh) 2023-10-01
TW201840005A (zh) 2018-11-01

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