JP2018046084A - Semiconductor device and manufacturing method of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent burrs of a shield material from being generated on an outer edge of a semiconductor device when an electromagnetic shield is formed on the surface of the semiconductor device. A semiconductor device includes a substrate, a semiconductor chip arranged on a first surface of the substrate, a sealing material provided on the first surface of the substrate so as to cover the semiconductor chip, and a seal. A conductive film provided from the upper surface of the stop material and the side surface of the sealing material to the side surface of the substrate is provided, and the conductive film becomes thinner from the side of the sealing material toward the side of the substrate. [Selection diagram] Fig. 3

Description

  The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device.

  In order to suppress electromagnetic interference generated from the semiconductor device, an electromagnetic shield may be formed on the surface of the semiconductor device. The electromagnetic shield is formed by sputtering, for example, and when the electromagnetic shield is formed on the semiconductor device, the semiconductor device is placed on a carrier such as a fixed sheet. When the electromagnetic shield is formed on the surface of the semiconductor device, the material of the electromagnetic shield is also formed on the surface of the transport carrier between adjacent semiconductor devices. Thus, the electromagnetic shield is formed as a continuous film on the surface of the semiconductor device and the surface of the carrier.

  When the semiconductor device is pulled away from the transport carrier, the shield film formed on the lower side of the semiconductor device is pulled by the shield material film formed on the transport carrier and peeled off, and the burr of the shield material is formed on the outer edge of the semiconductor device. It may occur (for example, Patent Document 1).

JP, 2015-115552, A

  If such burrs are peeled off during the characteristic inspection of the semiconductor device, the packaging process, or the mounting process on the printed circuit board, there is a possibility that a defect occurs due to the conductive foreign matter.

  Accordingly, an object of the present invention is to provide a semiconductor device and a method for manufacturing the same that can suppress the occurrence of burrs of a shield material on the outer edge of the semiconductor device when an electromagnetic shield is formed on the surface of the semiconductor device. And

  A semiconductor device according to one aspect of the present invention includes a substrate, a semiconductor chip disposed on the substrate, a sealing material provided on the substrate so as to cover the semiconductor chip, and the sealing material And a conductive film provided from the side surface of the sealing material to the side surface of the substrate, and the conductive film has a structure that becomes thinner from the sealing material side toward the substrate side. Is.

  In addition, the problems disclosed by the present application and the solutions thereof will be clarified by the description in the column of the embodiment for carrying out the invention and the description of the drawings.

  ADVANTAGE OF THE INVENTION According to this invention, when forming an electromagnetic shield in the surface of a semiconductor device, it can suppress that the burr | flash of a shielding material generate | occur | produces in the outer edge of a semiconductor device.

It is the schematic which shows an example of the state with which the several semiconductor device which concerns on this embodiment is mounted in the fixed sheet | seat. It is sectional drawing which shows the state in which the electromagnetic shield was formed in the surface of a semiconductor device. FIG. 3 is a partially enlarged sectional view of FIG. 2. 6 is a flowchart showing a manufacturing process of the semiconductor device according to the embodiment. It is a perspective view which shows an example of the frame in this embodiment. It is sectional drawing which shows the manufacturing process of the semiconductor device which concerns on this embodiment. FIG. 6 is a cross-sectional view showing the manufacturing process of the semiconductor device, following FIG. 5; FIG. 7 is a cross-sectional view showing the manufacturing process of the semiconductor device, following FIG. 6; FIG. 10 is a cross-sectional view similar to FIG. 3, illustrating a configuration of a semiconductor device according to Modification Example 1; FIG. 9 is a cross-sectional view similar to FIG. 3, illustrating a configuration of a semiconductor device according to Modification Example 2.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings as appropriate. In the drawings, common or similar components are given the same or similar reference numerals. In the following description, the thickness direction of the substrate is the vertical direction, and the surface of the substrate on which the semiconductor chip is provided is the upper side.

[Structure of semiconductor device]
A semiconductor device 10 according to the present embodiment will be described with reference to FIGS.
FIG. 1A and FIG. 1B show a state in which a plurality of semiconductor devices 10 are placed on a fixed sheet 20 that is a transport carrier. The semiconductor device 10 has, for example, a rectangular parallelepiped shape, and is carried into an electromagnetic shield forming device such as a sputtering device while being placed on the fixed sheet 20. The shape of the semiconductor device is generally a hexahedron such as a rectangular parallelepiped, but may be a shape having more than that.
Hereinafter, the surface facing the fixed sheet 20 in the semiconductor device 10 is referred to as a lower surface, the surface opposite to the lower surface is referred to as a top surface, and the outer peripheral surface connecting the lower surface and the top surface is referred to as a side surface. In the side surface of the semiconductor device 10, an end portion on the side connected to the top surface is referred to as an upper end portion, and an end portion on the side connected to the lower surface is referred to as a lower end portion. Further, on the side surface of the substrate 11, the end on the sealing material side is referred to as the upper end of the substrate, and the end on the lower surface side is referred to as the lower end of the substrate.

  Here, the fixing sheet 20 is flexible enough that the mounted semiconductor device 10 slightly sinks so that the sputtered shield material does not wrap around the lower surface side of the semiconductor device 10 even with respect to the warped substrate 11. It is preferable to provide. Further, an adhesive or a pressure-sensitive adhesive may be applied to the surface of the fixed sheet 20 so that the semiconductor device 10 placed on the fixed sheet 20 does not move. As a result, the periphery of the slightly warped substrate 11 and the fixed sheet 20 are bonded with an adhesive, so that the sputtered film does not enter the lower surface side around the substrate.

The semiconductor device 10 may be a wireless semiconductor device, for example, but is not limited thereto. The present invention is applied to semiconductor devices and semiconductor modules that require electromagnetic shielding.
In addition to sputtering, the electromagnetic shield may be formed by other methods such as vapor deposition, ion plating, and CVD (chemical vapor deposition).

  FIG. 2 is a cross-sectional view showing a state in which the electromagnetic shield 13 is formed on the surface of the semiconductor device 10 placed on the fixed sheet 20. FIG. 3A is an enlarged view of a portion surrounded by a broken line frame A in FIG. However, the fixing sheet 20 is omitted in FIG. The substrate 11 in FIG. 3A includes interlayer insulating layers 15 and 16, a ground electrode 17, and wiring not shown. The interlayer insulating layers 15 and 16 cover the wiring and the ground electrode 17. Note that electrodes and wirings for mounting electronic components are provided on the upper layer of the interlayer insulating layer. Further, an electrode for external connection is provided on the back surface, which is omitted here.

FIG. 3B is an enlarged view of a portion surrounded by a frame A in FIG. 2 and shows details of the multilayer substrate (in the multilayer substrate 11, an insulator and a conductive pattern are stacked in a wafer shape. ) In this case, the conductive pattern and the insulating layer are repeatedly laminated above and below, with the core layer as the center. That is, it is a metal wiring board having at least two layers. The ground electrode 17 is provided on the upper layer or the lower layer of the core layer, and preferably the upper layer.

A solder resist PSR is provided on the uppermost layer and the lowermost layer of the substrate. The uppermost solder resist layer PSR also serves as the insulating layer 15. A semiconductor chip is surface-mounted on the electrode exposed from the PSR. In addition, the ground electrode includes a wiring, an electrode wider than the wiring, or a solid electrode provided in a solid shape on substantially the entire surface. Further, the area exposed from the side surface should be large, and it should be exposed from at least one side.

As shown in FIG. 2, the semiconductor device 10 includes a substrate 11, a sealing material 12, and an electromagnetic shield 13.
The substrate 11 may be a printed wiring board, a ceramic substrate, or a Si substrate. Resin-made printed boards include a built-up type, a double-sided board type, and a single-sided board type.
The ground electrode 17 is exposed to the outside from the side surface of the substrate 11. Actually, it is exposed in the dicing process for separating into pieces as a semiconductor device, and the cutting surface of the ground electrode is exposed. The ground electrode 17 is extended to the inner layer of the substrate by wiring and is electrically connected to the ground wiring or the ground electrode. Generally, GND is assigned to an external connection electrode for soldering on the back surface of a printed circuit board, and is electrically connected to the GND terminal.

The sealing material 12 is made of, for example, a molding resin. The sealing material 12 covers and protects a semiconductor chip (not shown) disposed on the upper surface (first surface) of the substrate 11.
For example, a semiconductor device in which at least one semiconductor chip is mounted on a substrate and covered with the semiconductor chip may be called a semiconductor device. In addition, at least one passive element and at least one semiconductor element are mounted on a substrate, and those covering these may be referred to as a semiconductor module or a hybrid integrated circuit device. In any case, since the semiconductor chips are sealed together, these are collectively referred to as a semiconductor device.
The molding method of the sealing material 12 includes transfer molding, injection molding, vacuum printing, potting, and the like. Further, after a plurality of units arranged in a matrix are collectively molded, they are separated into pieces by dicing.

  The electromagnetic shield 13 as a conductive film covers the surface of the sealing material 12 and the side surface of the substrate 11. The electromagnetic shield 13 is provided to suppress leakage of electromagnetic waves generated inside the semiconductor device 10 to the outside. That is, the electromagnetic shield 13 is provided to suppress electromagnetic interference given to the periphery of the semiconductor device 10. Or, it is used to prevent malfunction caused by taking in electromagnetic waves from outside.

  The electromagnetic shield 13 is formed using a metal material such as copper (Cu), nickel, titanium, gold, silver, palladium, platinum, iron, chromium, and stainless steel. Further, the electromagnetic shield 13 may be an alloy using any one of the above metal materials or a laminated film using any one of the above metal materials.

  The electromagnetic shield 13 has a substantially uniform thickness on the top surface. The film thickness of the electromagnetic shield 13 becomes thinner on the side surface from the upper end portion toward the lower end portion of the substrate 11. Specifically, the film thickness W on the side surface of the electromagnetic shield 13 is substantially constant from the upper end to the ground electrode 17 as shown in FIG. 3, for example, and is the same as or slightly thinner than the thickness of the top surface. The film thickness W is thinner from the ground electrode 17 toward the lower end.

  By configuring the side surface portion of the electromagnetic shield 13 in such a configuration, the electromagnetic shield 13 is peeled off at a relatively thin portion near the lower end portion of the substrate 11, for example, and the ground electrode 17 is not exposed. . If the electromagnetic shield 13 is peeled to a position above the ground electrode 17 after the electromagnetic shield 13 is formed on the semiconductor device 10, the shielding performance is deteriorated. In this embodiment, such deterioration is avoided.

  In particular, when the film thickness of the electromagnetic shield 13 is minimized near the boundary between the side surface and the lower surface of the semiconductor device 10, the shield material is cut at the position where the film thickness is minimized when the semiconductor device 10 is removed from the fixed sheet 20. For this reason, the shield material is not in a state of being peeled off, and generation of conductive foreign matters in the subsequent process is suppressed.

  The electromagnetic shield 13 is electrically connected to the ground electrode 17 by covering the ground electrode 17 exposed from the side surface of the semiconductor device 10 (substrate 11). The thickness of the contact portion of the electromagnetic shield 13 with the ground electrode 17 is preferably equal to or greater than a certain value so as to reduce the resistance between the ground electrode 17 and the electromagnetic shield 13. In this case, the electromagnetic shield 13 on the side surface is formed to have the same film thickness, extend to the ground electrode 17 and contact, and then become thinner and have an inclination as shown in the figure. And it terminates near the lower end of the side surface of the substrate.

  Therefore, by increasing the film thickness of the electromagnetic shield 13, the increase in contact resistance with the ground electrode 17 is suppressed. If contact is made at a thin place such as an inclined portion, the contact resistance increases accordingly. Further, the film thickness of the electromagnetic shield 13 becomes thin after passing through the ground electrode 17 of the substrate, and the film thickness of the electromagnetic shield 13 becomes zero until the lower end portion of the substrate. Therefore, since the electromagnetic shield 13 is difficult to or does not wrap around the back side (lower surface) of the substrate, it is possible to prevent a short circuit with the external connection electrode on the back side (lower surface) of the substrate. For example, if the electromagnetic shield 13 is passed to the back (lower surface) of the substrate and the electromagnetic shield 13 is made thinner on the back side, a margin (about 0.3 mm) is required around the substrate due to the short circuit described above. . However, if this margin is eliminated, the distance between the external electrode and the periphery of the substrate can be narrower than 0.3 mm, and can be practically between about 0.3 mm and about 0.05 mm.

  Further, in FIG. 3, the ground electrode 17 is preferably disposed between the center of the substrate and the upper end of the substrate in the thickness direction of the substrate 11. Specifically, in the multilayer substrate of FIG. 3B, it is preferable to dispose between the core layer and the upper end of the substrate. Further, it is preferable to dispose between the center and the upper end of the substrate in view of the substrate thickness. With this arrangement, the inclined portion of the electromagnetic shield film 13 can be ensured as long as possible, and the formation position of the end portion of the inclined portion can be more stably ensured.

[Method for Manufacturing Semiconductor Device]
A method for manufacturing the semiconductor device 10 will be described with reference to FIGS. FIG. 4 is a flowchart showing a manufacturing process of the semiconductor device 10. FIG. 5 is a perspective view showing an example of a frame used in the present embodiment. 6 to 8 are cross-sectional views showing the manufacturing process of the semiconductor device.

  In step S <b> 1, in order to form the electromagnetic shield 13 on the surface of the semiconductor device 10, the semiconductor device 10 in a state where the semiconductor chip is disposed on the substrate 11 and covered with the sealing material 12 is placed on the fixing sheet 20. . The semiconductor device 10 is placed with the lower surface on the substrate 11 side (the second surface of the substrate 11) facing the fixed sheet 20. The plurality of semiconductor devices 10 are aligned on the fixed sheet 20 at regular intervals in the vertical and horizontal directions, for example, as shown in FIG.

  In step S <b> 2, the frame body 30 is placed on the fixed sheet 20. The frame 30 surrounds the side surface of the semiconductor device 10 as shown in FIG. In FIG. 5, one semiconductor device 10 and a frame 30 and a fixing sheet 20 corresponding to the semiconductor device 10 are shown. However, as shown in FIG. 1, a plurality of semiconductor devices 10 are aligned on the fixing sheet 20. Accordingly, the frame 30 is continuous vertically and horizontally so as to individually surround the other semiconductor devices 10 placed on the fixed sheet 30.

  The height of the frame 30, that is, the distance h from the upper surface of the fixed sheet 20 is determined according to the distance d between the frame 30 and the semiconductor device 10 (see FIG. 6). For example, the height h is lower than the position where the ground electrode 17 is exposed on the side surface of the semiconductor device 10. In this case, the upper side of the ground electrode 17 of the semiconductor device 10 is exposed. Moreover, it is preferable that the height h becomes lower as the distance d becomes shorter.

  For example, when forming a film with a sputtering apparatus, in order to form an electromagnetic shield 13 (see, for example, FIG. 10) that gradually decreases downward in the semiconductor device 10 when the film formation conditions of the sputtering apparatus are constant. The height h of the frame body 30 is relatively high, and a distance d between the frame body 30 and the outer peripheral surface of the semiconductor device 10 is provided to some extent. Moreover, in order to form the electromagnetic shield 13 (see, for example, FIGS. 3 and 9) that is suddenly thinned from a certain position, the height h of the frame 30 is substantially the same as the height at the position where the electromagnetic shield 13 begins to thin. In addition, the distance d between the frame 30 and the outer peripheral surface of the semiconductor device 10 is set to be slightly separated from the thickness of the electromagnetic shield 13 (see, for example, the thickness W in FIG. 3 and the thickness W1 in FIG. 9).

  The frame body 30 prevents the particles of the shield material from adhering to the lower side of the ground electrode 17 on the side surface of the semiconductor device 10 in the film forming process of the next step S3. Therefore, the film thickness of the electromagnetic shield 13 becomes thinner as it goes downward.

  After the frame 30 is placed at an appropriate position on the fixed sheet 20 in step S2, the electromagnetic shield 13 is formed on the surface of the semiconductor device 10 in step S3.

  The film forming the electromagnetic shield 13 is, for example, a laminated film of a copper film and a stainless steel film. The stainless steel film is a protective film for suppressing corrosion of the copper film. The protective layer is not limited to a film made of a metal material such as stainless steel, and may be a film made of resin, ceramic, metal oxide, or metal nitride.

After the above-described step S2, as shown in FIG. 7, the electromagnetic shield 13 is formed so as to cover the surface of the semiconductor device 10, and a film of a shielding material is also formed on the surfaces of the fixed sheet 20 and the frame 30. The At this time, the lower end portion of the electromagnetic shield 13 and the film of the shielding material formed on the fixed sheet 20 are not connected or connected with a slight thickness.
In short, the lower end portion of the electromagnetic shield 13 is located between the contact portion with the ground electrode 17 and the lower end portion of the printed circuit board.

  In step S4, the semiconductor device 10 shown in FIG. 3 is completed by removing the semiconductor device 10 from the fixing sheet 20 as shown in FIG. 8, for example. At this time, if the lower end portion of the electromagnetic shield 13 and the film of the shielding material formed on the fixed sheet 20 are not connected, no burr is generated. Alternatively, even when the lower end portion of the electromagnetic shield 13 and the film of the shielding material formed on the fixed sheet 20 are connected with a slight thickness, the connection is made when the semiconductor device 10 is removed from the fixed sheet 20. Since the electromagnetic shield 13 and the film of the shielding material on the fixed sheet 20 are separated at a place, burrs are hardly generated.

  According to the present embodiment, the electromagnetic shield 13 is formed so as to become thinner toward the lower surface of the substrate 11 (upper surface of the fixed sheet 20). Alternatively, an inclined portion having a film thickness is provided toward the lower end portion of the substrate after passing through the contact portion with the ground electrode 17. Thereby, it is suppressed that the electromagnetic shield 13 is connected with the film | membrane of the shielding material formed in the upper surface of the fixing sheet 20. FIG. As a result, when the semiconductor package 10 on which the electromagnetic shield 13 is formed is picked up from the fixed sheet 20, burrs due to the film of the shielding material do not occur or can be made very small. That is, it is possible to make it difficult to generate burrs.

  The electromagnetic shield 13 has a certain thickness or more at a position in contact with the ground electrode 17 exposed on the side surface of the substrate 11. Thereby, the resistance between the ground electrode 17 and the electromagnetic shield 13 can be reduced. As a result, the electromagnetic shield 13 can sufficiently exhibit the function as an electromagnetic shield.

[Modification 1]
With reference to FIG. 9, a semiconductor device according to Modification 1 of the present embodiment will be described. FIG. 9 is a cross-sectional view similar to FIG. 3, illustrating the configuration of the semiconductor device according to the first modification.

  The semiconductor device 110 includes a substrate 111, a sealing material 112, and an electromagnetic shield 113, as in the above-described embodiment. However, the electromagnetic shield 113 does not reach the lower end portion of the side surface of the substrate 111 and only covers the upper portion of the side surface of the insulating layer 116. However, the electromagnetic shield 113 has a certain thickness W1 or more at a location where it comes into contact with the ground electrode 117, as in the above-described embodiment.

  The manufacturing process of the semiconductor device 110 is a process of placing the semiconductor device 110 on a fixed sheet (not shown), a process of placing a frame (not shown) on the fixed sheet, a semiconductor, as in the embodiment described above. Forming the electromagnetic shield 113 on the device 110 and removing the semiconductor device 110 from the fixed sheet. However, in the step of placing the frame body on the fixed sheet, a frame body having a height lower than the thickness of the insulating layer 116 may be used. In this step, the distance between the frame body and the side surface of the semiconductor device 110 may be slightly separated from the thickness of the side surface of the electromagnetic shield 113.

  According to the first modification, the occurrence of burrs can be suppressed and the shield function of the electromagnetic shield 113 can be exhibited.

[Modification 2]
With reference to FIG. 10, a semiconductor device according to Modification 2 of the present embodiment will be described. FIG. 10 is a cross-sectional view similar to FIG. 3, illustrating the configuration of the semiconductor device according to the second modification.

  The semiconductor device 210 includes a substrate 211, a sealing material 212, and an electromagnetic shield 213, as in the above-described embodiment. However, the thickness of the portion of the electromagnetic shield 213 that covers the side surface of the semiconductor device 210 becomes thinner toward the lower end of the side surface of the substrate 211. However, the electromagnetic shield 213 has a thickness W2 that is equal to or greater than a certain value at a location where the electromagnetic shield 213 contacts the ground electrode 217.

  The manufacturing process of the semiconductor device 210 is a step of placing the semiconductor device 210 on a fixed sheet (not shown), a step of placing a frame (not shown) on the fixed sheet, as in the above-described embodiment, The method includes forming the electromagnetic shield 213 on the semiconductor device 210 and removing the semiconductor device 210 from the fixed sheet. However, in the step of placing the frame body on the fixed sheet, the height of the frame body is made as high as the upper surface of the substrate 211 so that the thickness of the electromagnetic shield 213 gradually decreases downward. Is relatively separated from the outer peripheral surface of the semiconductor device 210.

  According to the second modification, it is possible to prevent the occurrence of burrs and to exhibit the shielding function of the electromagnetic shield 213.

As described above, the semiconductor device 10 (110, 210) includes the substrate 11 (111, 211), the semiconductor chip (not shown) disposed on the substrate 11 (111, 211) (upper surface), and the semiconductor. The sealing material 12 (112, 212) provided on the substrate 11 (111, 211) so as to cover the chip, the upper surface of the sealing material 12 (112, 212), and the sealing material 12 (112, 212) And an electromagnetic shield 13 (113, 213) provided from the side surface to the side surface of the substrate 11 (111, 211). The electromagnetic shield 13 (113, 213) becomes thinner from the sealing material 12 (112, 212) side toward the substrate 11 (111, 211) side.
According to this embodiment, when the electromagnetic shield 13 (113, 213) is formed on the surface of the semiconductor device 10 (110, 210), the burr of the shield material is generated at the outer edge of the semiconductor device 10 (110, 210). This can be suppressed.

  The substrate 11 (111, 211) has a ground electrode 17 (117, 217) exposed from the side surface of the substrate 11 (111, 211) along the thickness direction of the substrate 11 (111, 211). (113, 213) may be formed so as to cover the ground electrode 17 (117, 217) and include a position where it is in electrical contact. For example, the film thickness W (W2) of the electromagnetic shield 13 (213) formed on the substrate 11 (211) and the sealing material 12 (212) along the thickness direction of the substrate 11 (211) is the ground electrode 17 (217). It may be constant up to the connecting portion, and may become thinner from the position passing through the ground electrode 17 (217) toward the lower surface. According to this embodiment, the resistance between the ground electrode 17 (117, 217) and the electromagnetic shield 13 (113, 213) can be reduced. As a result, the electromagnetic shield 13 (113, 213) can sufficiently exhibit the function as an electromagnetic shield.

  Alternatively, the semiconductor device 10 (110, 210) includes the ground electrode 17 (217) disposed between the center of the substrate thickness and the upper end in the thickness direction of the substrate 11 (111, 211), and electromagnetically. The shield 13 (113, 213) may have a structure that becomes thinner toward the lower end of the substrate after passing through the ground electrode 17 (217) from the sealing material 12 (212) side. With such an arrangement, the inclined portion of the electromagnetic shield film 13 (113, 213) can be secured as long as possible, and the formation position of the end portion of the inclined portion can be more stably secured.

The manufacturing method of the semiconductor device 10 (110, 210) includes the substrate 11 (111, 211), the semiconductor chip disposed on the substrate 11 (111, 211), and the substrate 11 (111, 211) so as to cover the semiconductor chip. ) Having a rectangular parallelepiped-shaped semiconductor device 10 (110, 210) having a sealing material 12 (112, 212) provided thereon, and the semiconductor device 10 (110) so that the lower surface faces the fixing sheet 20. 210) on the fixed sheet 20, and the frame 30 that surrounds the outer peripheral surface of the semiconductor device 10 (110, 210) via the fixed gap d on the fixed sheet 20, In the step (step S2) of placing on the fixed sheet 20 and the thickness direction of the substrate 11 (111, 211), the film thickness of the electromagnetic shield 13 (113, 213) is the sealing material 1. A step (step S3) of forming an electromagnetic shield 13 (113, 213) that becomes thinner from the side of (112, 212) to the side of the substrate 11 (111, 211) and terminates to the lower end of the substrate (step S3); 20 and removing the semiconductor device 10 (110, 210) from above (step S4).
According to this embodiment, the electromagnetic shield 13 (113, 213) is formed so as to become thinner toward the lower surface of the substrate 11 (111, 211) (the upper surface of the fixed sheet 20). Thereby, it is suppressed that the electromagnetic shield 13 (113, 213) is connected to the film of the shield material formed on the upper surface of the fixed sheet 20. As a result, when the semiconductor package 10 (110, 210) on which the electromagnetic shield 13 (113, 213) is formed is picked up from the fixing sheet 20, burrs due to the film of the shield material do not occur or can be made very small. it can. That is, it is possible to make it difficult to generate burrs.

  As mentioned above, although embodiment of this invention was described, this invention is not limited to this. The material, shape, and arrangement of each member described above are merely embodiments for carrying out the present invention, and various changes can be made without departing from the spirit of the invention.

10, 110, 210 Semiconductor device 11, 111, 211 Substrate 12, 112, 212 Sealing material 13, 113, 213 Electromagnetic shield 17, 117, 217 Ground electrode 20 Sheet 30 Frame body

Claims (6)

A substrate,
A semiconductor chip disposed on the substrate;
A sealing material provided on the substrate so as to cover the semiconductor chip;
A conductive film provided from the top surface of the sealing material and the side surface of the sealing material to the side surface of the substrate,
The semiconductor device is characterized in that the conductive film becomes thinner from the sealing material side toward the substrate side. The substrate has a ground electrode exposed from a side surface of the substrate;
The semiconductor device according to claim 1, wherein the conductive film covers and electrically contacts the ground electrode. The film thickness of the conductive film formed on the substrate and the sealing material is constant up to the connection portion with the ground electrode, and becomes thinner from the position passing through the ground electrode toward the lower end of the substrate. The semiconductor device according to claim 2. A substrate,
A semiconductor chip disposed on the substrate;
A sealing material provided on the substrate so as to cover the semiconductor chip;
A conductive film provided from the top surface of the sealing material and the side surface of the sealing material to the side surface of the substrate,
The substrate has a ground electrode exposed between the center of the substrate side surface and the upper end of the substrate,
When the conductive film passes through the ground electrode from the sealing material side, the conductive film becomes thinner toward the lower end of the substrate.   5. The semiconductor device according to claim 2, wherein the ground electrode includes a grounding wire, an electrode having a width wider than the wiring, or a solid electrode provided in a substantially solid shape in a plan view. . A semiconductor device having a substrate, a semiconductor chip disposed on the substrate, and a sealing material provided on the substrate so as to cover the semiconductor chip is prepared, and the back surface of the substrate faces the fixing sheet. So as to place the semiconductor device on the fixed sheet;
On the fixed sheet, a step of placing on the fixed sheet a frame that surrounds the outer peripheral surface of the semiconductor device with a predetermined gap;
In the thickness direction of the substrate, the step of forming the conductive film, the film thickness of the conductive film decreases from the sealing material side toward the substrate side, and terminates until the lower end of the substrate;
Removing the semiconductor device from the fixing sheet;
A method for manufacturing a semiconductor device, comprising: