JP2016031490A - Exposure method and exposure apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an exposure method and an exposure apparatus, by which positional deviation between an exposure pattern on a first surface side and an exposure pattern on a second surface side of an exposure object can be decreased.SOLUTION: The exposure method includes an irradiation step, in which while scanning and irradiating a top surface 201 of an exposure object substrate 200 having the top surface 201 and a back surface 202 opposing to each other with laser light LL1 as well as scanning and irradiating the back surface 202 with laser light LL2, the exposure object substrate 200 is moved in a direction intersecting the scanning direction of the laser light LL1 and the scanning direction of the laser light LL2. An exposure pattern on the top surface 201 side transferred by the irradiation with the laser light LL1 is different from an exposure pattern on the back surface 203 side transferred by the irradiation with the laser light LL2.SELECTED DRAWING: Figure 1

Description

  The present invention relates to an exposure method and an exposure apparatus.

  For example, a droplet discharge head provided in a droplet discharge device such as an ink jet printer includes a nozzle plate in which a plurality of nozzle holes for discharging droplets are formed. In the droplet discharge head, in order to improve discharge characteristics, a nozzle plate having a two-stage shape including a small hole diameter portion and a large hole diameter portion is used instead of making the entire nozzle hole into an integral cylindrical shape. It is known (see, for example, Patent Document 1).

  In general, in order to form such a two-stage nozzle hole, first, a resist is applied to both sides of the substrate, and then an exposure mask corresponding to the shape of the small hole diameter portion is used to form one of the substrates. The resist applied on the surface side is exposed, and the resist applied on the other surface side of the substrate is exposed using an exposure mask corresponding to the shape of the large hole diameter portion. Thereafter, the resist is developed to obtain resist masks corresponding to the shapes of the small hole diameter portion and the large hole diameter portion, and then the substrate is etched through the resist mask. Thereby, the nozzle hole which has a small hole diameter part and a large hole diameter part can be obtained.

  However, in the formation of the nozzle holes having the two-stage shape as described above, different exposure masks are used for one surface and the other surface of the substrate. There was a problem that it was difficult to match. Therefore, it is difficult to form an ideally shaped nozzle hole because the relative positions of these masks shift.

JP 2007-313701 A

  The objective of this invention is providing the exposure method and exposure apparatus which can reduce the position shift of the exposure pattern of the 1st surface side of a to-be-exposed object, and the exposure pattern of the 2nd surface side.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following application examples.

[Application Example 1]
The exposure method of the present invention scans and irradiates the first surface of the object having the first surface and the second surface facing each other with the first exposure light, and scans the second surface with the second exposure light. An irradiation step of moving the object to be exposed in a direction intersecting the scanning direction of the first exposure light and the scanning direction of the second exposure light,
The exposure pattern of the first surface exposed by the irradiation of the first exposure light is different from the exposure pattern of the second surface exposed by the irradiation of the second exposure light.

  Thereby, it is possible to form different exposure patterns on the first surface and the second surface in the same process without using an exposure mask. Therefore, alignment of the exposure mask with respect to the object to be exposed and alignment between the exposure masks are omitted. Therefore, the displacement of the relative position of the exposure pattern on the first surface side and the exposure pattern on the second surface side with respect to the object to be exposed, and the misalignment between the exposure pattern on the first surface side and the exposure pattern on the second surface side. Can be reduced.

[Application Example 2]
In the exposure method of the present invention, the irradiation position of the first exposure light on the first surface and the irradiation position of the second exposure light on the second surface overlap in a plan view of the object to be exposed. It is preferable to include an adjustment step of adjusting to.

  Thereby, the position shift of the exposure pattern on the first surface side and the exposure pattern on the second surface side of the object to be exposed can be further reduced.

[Application Example 3]
In the exposure method of the present invention, it is preferable that the object to be exposed includes a piezoelectric material.

  Even including such a piezoelectric material, it is particularly easy to reduce the positional deviation between the exposure pattern on the first surface side and the exposure pattern on the second surface side of the object to be exposed.

[Application Example 4]
In the exposure method of the present invention, it is preferable that the exposure pattern on the first surface and the exposure pattern on the second surface are shifted in accordance with the etching anisotropy of the object to be exposed.

  Thereby, the overetching resulting from the etching anisotropy can be further reduced.

[Application Example 5]
In the exposure method of the present invention, the object to be exposed is
A substrate,
A resist layer provided on each of the front side and the back side of the substrate;
A metal layer provided between the substrate and the resist layer;
It is preferable to have.

  Thereby, for example, the wiring provided in a desired position can be obtained by etching the metal layer after exposing and developing the resist layer.

[Application Example 6]
An exposure apparatus of the present invention includes a first irradiation unit that scans and irradiates a first exposure light onto a first surface of an object to be exposed having a first surface and a second surface facing each other,
A second irradiation unit that scans and irradiates the second surface with second exposure light; and
A moving unit that moves the object to be exposed in a direction intersecting the scanning direction of the first exposure light and the scanning direction of the second exposure light;
A control unit for controlling the first irradiation unit, the second irradiation unit, and the moving unit,
The control unit irradiates the first exposure light to the first surface, moves the object to be exposed while irradiating the second exposure light to the second surface, and moves the first exposure. It is possible to control the exposure pattern of the first surface exposed by light irradiation to be different from the exposure pattern of the second surface exposed by irradiation of the second exposure light. To do.

  Thereby, it is possible to form different exposure patterns on the first surface and the second surface in the same process without using an exposure mask. Therefore, alignment of the exposure mask with respect to the object to be exposed and alignment between the exposure masks are omitted. Therefore, the displacement of the relative position of the exposure pattern on the first surface side and the exposure pattern on the second surface side with respect to the object to be exposed, and the misalignment between the exposure pattern on the first surface side and the exposure pattern on the second surface side. Can be reduced.

It is a block diagram of the exposure apparatus which concerns on suitable embodiment of this invention. It is a figure which shows the scanning direction of the laser beam of the exposure apparatus shown in FIG. 1, and the moving direction of a to-be-exposed board | substrate. It is a figure which shows the nozzle substrate obtained using the to-be-exposed board | substrate, (a) is a top view, (b) is the sectional view on the AA line of the same figure (a). It is sectional drawing for demonstrating the adjustment process included in the exposure method of the to-be-exposed board | substrate shown in FIG. It is sectional drawing for demonstrating the exposure process (irradiation process) included in the exposure method of the to-be-exposed board | substrate shown in FIG. It is sectional drawing which shows the inkjet head as an example of a product. The vibration element as an example of a product is shown, (a) is a plan view (front view), (b) is a plan view (back view), and (c) is a side view. It is a figure for demonstrating the method to form the external shape of the vibration element piece which the vibration element shown in FIG. 7 has. It is a figure for demonstrating the patterning method of the connection wiring which the vibration element shown in FIG. 7 has. It is sectional drawing which shows the wavelength tunable filter as an example of a product. It is sectional drawing which shows the light emitting element as an example of a manufactured product. It is the BB sectional view taken on the line in FIG. It is sectional drawing which shows the base material which has a metal mask as an example of a manufactured product. It is sectional drawing which shows the manufacturing method of the metal mask shown in FIG.

  Hereinafter, an exposure method and an exposure apparatus of the present invention will be described in detail based on preferred embodiments shown in the accompanying drawings.

  FIG. 1 is a block diagram of an exposure apparatus according to a preferred embodiment of the present invention. FIG. 2 is a diagram showing the scanning direction of the laser beam and the moving direction of the substrate to be exposed of the exposure apparatus shown in FIG. 3A and 3B are diagrams showing a nozzle substrate obtained by using the substrate to be exposed, in which FIG. 3A is a plan view and FIG. 3B is a cross-sectional view taken along line AA in FIG. FIG. 4 is a cross-sectional view for explaining an adjustment process included in the exposure method of the substrate to be exposed shown in FIG. FIG. 5 is a cross-sectional view for explaining an exposure process (irradiation process) included in the exposure method of the substrate to be exposed shown in FIG. In FIG. 1, FIG. 2, FIG. 4, and FIG. 5, for convenience of explanation, the x axis, the y axis, and the z axis are illustrated as three axes that are orthogonal to each other. Hereinafter, a direction parallel to the x-axis is also referred to as “x-axis direction”, a direction parallel to the y-axis is also referred to as “y-axis direction”, and a direction parallel to the z-axis is also referred to as “z-axis direction”.

1. Exposure Apparatus An exposure apparatus 100 shown in FIG. 1 is an exposure apparatus used to expose a substrate (exposure object) 200 to be exposed. Such an exposure apparatus 100 includes a holding unit (moving unit) 110 that moves the held substrate to be exposed 200, and laser light (first exposure light) LL1 on the surface (first surface) 201 side of the substrate to be exposed 200. The first irradiation unit 120A that irradiates (incidents) and the second irradiation unit 120B that irradiates (incidents) laser light (second exposure light) LL2 to the back surface (second surface) 202 side of the substrate 200 to be exposed. In addition, the exposure apparatus is a double-sided exposure type capable of exposing the front surface 201 and the back surface 202 of the substrate 200 to be exposed simultaneously (within the same process).

[First irradiation unit]
The first irradiation unit 120A includes a laser light source 130A that emits laser light LL1, an optical lens system 150A that optically corrects the laser light LL1, and a polygon mirror 160A that scans the laser light LL1.

  The laser light source 130A is controlled by the control unit 140 and emits the laser light LL1 at a predetermined timing so that the surface 201 can be exposed with a predetermined pattern. The laser beam LL1 emitted from the laser light source 130A is reflected by the mirror 170A and then enters the reflecting surface 161 of the polygon mirror 160A. The polygon mirror 160A is rotationally driven around the axis J at a substantially constant speed by a driving source (not shown) such as a motor, and scans the incident laser beam LL1 one-dimensionally.

  As shown in FIG. 1, the optical lens system 150A includes a collimator lens 151, a first zoom lens 152, a second zoom lens 153, and a first cylindrical lens 154 disposed between the laser light source 130A and the mirror 170A. And an fθ lens 155 and a second cylindrical lens 156 disposed between the polygon mirror 160A and the holding unit 110.

  Among these lenses, the collimator lens 151 is a lens for making the laser beam LL1 into parallel light. The first zoom lens 152 is a lens that expands the laser beam LL1 in the z-axis direction, and the second zoom lens 153 is a lens that expands the laser beam LL1 in the y-axis direction. Since the cross-sectional shape of the laser light LL1 emitted from the laser light source 130A is generally not a perfect circle (ellipse), the cross-sectional shape (aspect ratio) of the laser light LL1 is changed by the first and second zoom lenses 152 and 153. Correction is made so that the cross-sectional shape is almost a perfect circle. Further, the first cylindrical lens 154 and the second cylindrical lens 156 correct the deviation of the scanning position of the laser beam LL1 due to the so-called “surface tilt” of the reflection surface 161 of the polygon mirror 160A, and are the same regardless of the presence or absence of the surface tilt. This is a lens for imaging the laser beam LL1 at a position. The fθ lens 155 is a lens for scanning the exposed substrate 200 with the laser light LL1 at a constant speed. By providing the optical lens system 150A having such a configuration, the exposed substrate 200 can be irradiated with the laser light LL1 with high accuracy.

  In the first irradiation unit 120A having such a configuration, the laser beam LL1 is scanned once along the x-axis direction (main scanning) on the surface 201 by the single reflecting surface 161 of the polygon mirror 160A (see FIG. 2). ). Thereby, the surface 201 can be exposed one-dimensionally (linearly). Hereinafter, a locus on the surface 201 of the laser beam LL1 by one main scanning is defined as a scanning line L1, and a portion exposed by the scanning line L1 is defined as an exposure line L1 '.

[Second irradiation section]
The second irradiation unit 120B includes a laser light source 130B that emits laser light LL2, an optical lens system 150B that optically corrects the laser light LL2, a polygon mirror 160B that scans the laser light LL2, and a mirror 170B. Yes. Such 2nd irradiation part 120B is the structure similar to 120 A of 1st irradiation parts mentioned above. Therefore, detailed description of the second irradiation unit 120B is omitted.

  Such a second irradiation unit 120B is arranged to face the first irradiation unit 120A via the holding unit 110 (the substrate to be exposed 200 held by the holding unit 110). More specifically, the first irradiation unit 120A is positioned on the front surface 201 side of the substrate 200 to be exposed held by the holding unit 110, and the second irradiation unit 120B is positioned on the back surface 202 side. By arranging the first and second irradiation units 120A and 120B in such an arrangement, the front surface 201 side of the substrate to be exposed 200 is irradiated with the laser light LL1 from the first irradiation unit 120A, and the second irradiation is performed on the back surface 202 side. The laser beam LL2 from the part 120B can be irradiated, and the exposed substrate 200 can be simultaneously exposed (exposed in the same exposure process) from the front surface 201 side and the back surface 202 side.

  Further, the second irradiation unit 120B is arranged so that the main scanning direction of the laser light LL2 is along the main scanning direction of the laser light LL1. That is, the laser beam LL2 is main-scanned along the x-axis direction on the back surface 202, whereby the back surface 202 can be exposed one-dimensionally (linearly) (see FIG. 2). By aligning the main scanning directions of the laser beams LL1 and LL2 in this way, the scanning direction (sub-scanning direction) of the exposed substrate 200 along with the moving direction of the holding unit 110 is changed to the main scanning direction of the laser beams LL1 and LL2. Since the substrate can be orthogonal to each other, the exposed substrate 200 can be efficiently exposed. In the following description, a locus on the back surface 202 of the laser beam LL2 by one main scanning is referred to as a scanning line L2, and a portion exposed by the scanning line L2 is referred to as an exposure line L2 '.

  In addition, the laser beam LL1 from the first irradiation unit 120A is designed so that the exposed substrate 200 is irradiated with the beam waist (the portion with the smallest diameter (focal point)) and the region with a small beam diameter in the vicinity thereof. Similarly, the laser beam LL2 from the second irradiation unit 120B is designed so that the substrate to be exposed 200 is irradiated with the beam waist portion and a region with a small beam diameter in the vicinity thereof. Thereby, the to-be-exposed substrate 200 can be finely and accurately exposed.

  Further, the spot shape and area on the surface 201 of the laser beam LL1 so that the scanning line L1 by the laser beam LL1 and the scanning line L2 by the laser beam LL2 have substantially the same width (length along the sub-scanning direction). The spot shape and area on the back surface 202 of the laser beam LL2 are designed to be substantially equal.

[Holding unit]
The holding unit 110 is moved in a direction (sub-scanning direction) intersecting the main scanning direction of the laser beams LL1 and LL2 by the control unit 140 while holding the exposed substrate 200. Therefore, the laser beam LL1 is two-dimensionally moved with respect to the substrate to be exposed 200 held by the holding unit 110 by scanning the laser beams LL1 and LL2 in the main scanning direction while moving the holding unit 110 in the sub-scanning direction. , LL2 are respectively irradiated, so that the resist film R can be exposed in a predetermined pattern.

  The moving direction (sub-scanning direction) of the holding unit 110 is not particularly limited, but it is preferable that the holding unit 110 is closer to the vertical direction. Thereby, since the to-be-exposed board | substrate 200 hold | maintained at the holding | maintenance unit 110 will be in the state stood with respect to the horizontal surface, for example, compared with the state to which the to-be-exposed substrate 200 followed the horizontal surface, the bending of the to-be-exposed substrate 200 was carried out. Can be reduced. Therefore, the laser beams LL1 and LL2 can be accurately irradiated to the exposed substrate 200, and the exposed substrate 200 can be accurately exposed.

  The shape of the holding unit 110 is not particularly limited, but in the present embodiment, the holding unit 110 is configured to hold the edge of the substrate 200 to be exposed. Thereby, both the front surface 201 and the back surface 202 of the substrate 200 to be exposed can be exposed.

[Control unit]
A control unit 140 shown in FIG. 1 controls each unit of the exposure apparatus 100. For example, the control unit 140 controls driving of the laser light sources 130A and 130B, the polygon mirrors 160A and 160B, and the holding unit 110 so that the front surface 201 and the back surface 202 are exposed in a predetermined pattern.

  The configuration of the exposure apparatus 100 has been briefly described above. According to such an exposure apparatus 100, the substrate 200 to be exposed can be exposed in a predetermined pattern by synchronizing the movement of the holding unit 110 and the emission timing of the laser beams LL1 and LL2. For this reason, an exposure mask used in an exposure apparatus as conventionally known (for example, an apparatus described in JP-A-2006-210426) is not required, and the manufacturing time and manufacturing cost of the exposure mask can be saved. . Therefore, the exposure apparatus 100 can perform exposure inexpensively and quickly with respect to the conventional exposure apparatus.

  The configuration of the exposure apparatus 100 is not limited to the above configuration as long as the substrate to be exposed 200 can be exposed by scanning light. For example, in each of the optical lens systems 150A and 150B, at least one of the various lenses described above may be omitted, or a lens having a function other than the various lenses described above may be included. As a means for scanning the laser beams LL1 and LL2, a Si MEMS device that performs optical scanning by rotating the mirror surface around the axis J may be used instead of the polygon mirrors 160A and 160B. In the above configuration, the holding unit 110 has a fixed posture with respect to the first and second irradiation units 120A and 120B, but the holding unit 110 may be tilted and rotatable. Conversely, the first and second irradiation units 120A and 120B may be inclined and rotated with respect to the holding unit 110. In the above configuration, the holding unit 110 moves in the sub-scanning direction with respect to the first and second irradiation units 120A and 120B. The two irradiation units 120A and 120B may be configured to move in the sub-scanning direction. Further, the holding unit 110 and the first and second irradiation units 120A and 120B may both be configured to move in the sub-scanning direction.

2. Next, a method for manufacturing a nozzle plate 80 as shown in FIG. 3A from the substrate to be exposed 200 using the exposure apparatus 100 will be described.

The exposed substrate 200 includes a substrate 20 and a resist film R formed on each of the front and back surfaces of the substrate 20. Further, the manufactured nozzle plate 80 is as shown in FIG. It is a plate-like member having a rectangular shape in plan view, and has a large number of nozzle holes 85. As shown in FIG. 3B, these nozzle holes 85 include a small diameter hole portion 851 having a small opening diameter and a large diameter hole portion 852 having an opening diameter larger than that of the small diameter hole portion 851.

  The nozzle plate 80 having such a structure is obtained by exposing and developing the resist film R of the exposed substrate 200 to obtain a resist mask (not shown), and then etching the substrate 20 through the resist mask. be able to. The exposure method of the present invention is applied to the exposure of the substrate to be exposed 200.

Hereinafter, a method for exposing the substrate to be exposed 200 will be described in detail.
The exposure method of the to-be-exposed board | substrate 200 has an adjustment process and an exposure process (irradiation process). The resist film R included in the substrate to be exposed 200 may be a positive type in which an exposed portion (a portion irradiated with the laser light LL1 or LL2) is removed, or a negative type in which the exposed portion remains. However, in the following, the case of the positive type will be described as a representative.

[Adjustment process]
First, before exposing the substrate 200 to be exposed, the test piece 90 is used to make adjustments so as to reduce the displacement between the irradiation position of the laser beam LL1 and the irradiation position of the laser beam LL2. That is, adjustment is performed so as to improve the overlay accuracy in the plan view of the irradiation positions of the laser beams LL1 and LL2.

  Specifically, first, a test piece 90 having the same configuration as that of the substrate 200 to be exposed, that is, a substrate 9 as shown in FIG. 4A, and a resist film R9 applied to the front and back surfaces of the substrate 9 are provided. A test piece 90 is prepared. Then, the test piece 90 is held in the holding unit 110.

  Next, while synchronizing the movement of the holding unit 110 and the timing of irradiation of the laser beams LL1 and LL2, the holding unit 110 is moved in the sub-scanning direction while performing main scanning of the laser beams LL1 and LL2, respectively. Specifically, when each of the two polygon mirrors 160A and 160B makes one rotation, main scanning of the laser beams LL1 and LL2 is performed 8 times, which is the number of the reflecting surfaces 161 of the polygon mirror 160A, and the sub-scanning of the test piece 90 is performed. Movement in the scanning direction is performed for eight scanning lines L1 and L2. Thereby, portions corresponding to the scanning lines L1 and L2 are exposed. As a result, as shown in FIG. 4B, eight exposure lines L1 ′ and L2 ′ are arranged along the sub-scanning direction, respectively, on the resist film R9 on the front surface 201 side and the back surface 202 side of the test piece 90. Two-dimensional (for example, a quadrangular shape in plan view) exposure patterns are formed.

  Next, after developing the resist film R9 of the test piece 90 to obtain a resist mask (not shown), the substrate 9 is etched through the resist mask. Thereafter, by removing the resist mask, two openings (through holes) 95 and 96 are formed in the substrate 9 as shown in FIG. The opening 95 corresponds to a portion exposed by irradiation with the laser light LL1, and the opening 96 corresponds to a portion exposed by irradiation with the laser light LL2.

  Next, using an optical microscope, for example, it is confirmed whether the center of the opening 95 and the center of the opening 96 overlap in plan view. In the case where they do not overlap as shown in FIG. 4C, the distance (separation distance) d between the center of the opening 95 and the center of the opening 96 is measured. Based on the measured distance d and the number of main scans (number of exposure lines L1 'and L2'), the deviation (difference) in the irradiation position of the laser beams LL1 and LL2 is obtained. Then, based on the deviation of the irradiation position of the laser beams LL1 and LL2, for example, the arrangement of the first and second irradiation units 120A and 120B, the arrangement (angle, etc.) of the holding unit 110, and the like are adjusted, and the laser beams LL1, The irradiation positions of LL2 are substantially overlapped. Thereby, even if the irradiation positions of the laser beams LL1 and LL2 do not overlap, the irradiation positions of the laser beams LL1 and LL2 can be made coincident or close to each other in plan view.

  Further, by observing the sharpness (roundness, dullness, etc.) of the edge 951 of the opening 95 and the edge 961 of the opening 96 with an optical microscope, the spot shapes, areas, and exposure amounts of the laser beams LL1 and LL2 are observed. You can also check for differences. If the edges 951 and 961 have different sharpness, the incident angles of the laser beams LL1 and LL2 with respect to the exposed substrate 200 are set so that the spot shapes, areas, and exposure amounts of the laser beams LL1 and LL2 are substantially equal. The intensity of the laser beams LL1 and LL2 is adjusted. Thereby, the obtained exposure pattern on the front surface 201 side and exposure pattern on the back surface 202 side can be made more uniform.

  In this adjustment step, when the opening 95 and the opening 96 overlap in plan view, for example, the arrangement of the first and second irradiation sections 120A and 120B, the arrangement (angle, etc.) of the holding unit 110, and the like. The adjustment may be omitted.

  In this adjustment step, the main scanning and the sub-scanning are performed 8 times. However, the number of times of the main scanning and the sub-scanning is not limited to this, and may be one time or a plurality of times other than eight times.

  Moreover, in this adjustment process, the deviation of the irradiation position of the laser beams LL1 and LL2 was confirmed by confirming the relative positions of the openings 95 and 96 obtained by exposing and developing the test piece 90 and etching. However, the method for confirming the deviation of the irradiation positions of the laser beams LL1 and LL2 is not limited to this. For example, in the case of the test piece 90 including the substrate 9 having transparency, a resist mask (not shown) obtained by exposing and developing the resist film without forming the openings 95 and 96 in the substrate 9. It is also possible to confirm the deviation of the irradiation position of the laser beams LL1 and LL2 by confirming the edge of.

[Exposure process]
Next, laser light LL1 and LL2 are irradiated to the to-be-exposed board | substrate 200, and the surface 201 and the back surface 202 are exposed.

  Specifically, first, a substrate to be exposed 200 as shown in FIG. 5A is prepared and held in the holding unit 110.

  Next, while synchronizing the movement of the holding unit 110 and the timing of irradiation with the laser beams LL1 and LL2, while moving the laser beams LL1 and LL2 in the main scanning, the holding unit 110 is moved in the sub-scanning direction. The substrate to be exposed 200 is sub-scanned. In this manner, portions of the resist film R irradiated with the laser beams LL1 and LL2 are exposed. Specifically, the resist film R on the front surface 201 side is exposed by the laser beam LL1 so as to correspond to the shape of the large-diameter hole 852, and the resist film R on the back surface 202 side is exposed by the laser beam LL2. The exposure is performed so as to correspond to the shape. Thereby, as shown in FIG. 5B, an exposure pattern 211P corresponding to the shape of the large-diameter hole 852 and 212P corresponding to the shape of the small-diameter hole 851 are formed.

  In this way, by scanning the exposed substrate 200 while scanning the laser beams LL1 and LL2, the front surface 201 and the back surface 202 are different without using the exposure mask used in the conventional exposure method. Exposure patterns 211P and 212P can be formed. Therefore, as in the prior art, alignment of the exposure mask with respect to the substrate and alignment between the exposure masks can be omitted. Therefore, in this embodiment, it is possible to reduce the positional deviation between the different exposure patterns 211P and 212P. That is, it is possible to reduce the displacement of the exposure patterns 211P and 212P relative to the substrate 200 to be exposed and the displacement of the exposure patterns 211P and 212P.

  Further, in the present embodiment, in the adjustment step, adjustment is performed so that the positional deviation in a plan view between the irradiation position of the laser beam LL1 on the front surface 201 and the irradiation position of the laser beam LL2 on the back surface 202 is reduced. Has been. For this reason, the positional deviation of the exposure patterns 211P and 212P can be further reduced.

  In the adjustment step, the spot shapes, areas, and exposure amounts of the laser beams LL1 and LL2 are adjusted so as to be more uniform. Variation in occurrence of excessive portions can be reduced, and the front surface 201 and the back surface 202 can be more uniformly exposed. Therefore, the obtained exposure patterns 211P and 212P can be made more uniform.

  As described above, after the exposure process, the resist film R is developed to obtain a resist mask (not shown), and then the substrate 20 is etched through the resist mask to remove the resist mask. Thus, a nozzle plate 80 as shown in FIG. 3 can be obtained.

  The exposure method and the exposure apparatus of the present invention have been described based on the illustrated embodiment. However, the present invention is not limited to this, and the configuration of each part is an arbitrary configuration having the same function. Can be replaced. In addition, any other component may be added to the present invention.

  In the above description, the nozzle plate 80 has been described as a product that can be manufactured using the exposure apparatus or exposure method of the present invention (including an exposed substrate). It is not limited. Hereinafter, some specific examples of the product will be exemplified. However, the product is not limited to the examples given below.

≪Inkjet head≫
FIG. 6 is a cross-sectional view showing an inkjet head as an example of a product.

  An inkjet head 800 shown in FIG. 6 includes the nozzle plate 80 described above, a laminated substrate 810 in which a flow path forming substrate 812, a vibration plate 813, a reservoir forming substrate 814, and a compliance substrate 815 are sequentially laminated, and a vibration plate. A plurality of piezoelectric elements 820 disposed on 813, a wiring formation portion 830 provided on the vibration plate 813 so as to cover the piezoelectric elements 820, and an IC package 840 disposed on the wiring formation portion 830. ing. In such an ink jet head 800, the piezoelectric element 820 vibrates the vibration plate 813, thereby changing the pressure in the pressure generation chamber 890, and discharging the ink I from the nozzle hole (ejection port) 85 formed in the nozzle plate 80. It is comprised so that it may discharge as a droplet.

  For example, the wiring forming unit 830 is collectively formed with the reservoir forming substrate 814 by performing wet etching (anisotropic etching) on the silicon substrate. Such a wiring forming portion 830 has a pair of inclined surfaces 831 and 832 and an upper surface 833 that connects the upper ends of the inclined surfaces 831 and 832, and the inclined angle of the inclined surfaces 831 and 832 is about 54 °. ing. In addition, the wiring forming portion 830 has a recess opening on the lower surface, and the piezoelectric element 820 is disposed in a space defined by the recess and the diaphragm 813. Further, a wiring 839 is disposed on the upper surface 833 and the inclined surfaces 831 and 832 of the wiring forming portion 830, and the wiring 839 is electrically connected to the piezoelectric element 820.

  The IC package 840 includes a circuit that can control the driving of each piezoelectric element 820 independently, and is fixed to the upper surface of the wiring forming portion 830 via a conductive fixing member such as solder or gold bumps. 839 is electrically connected.

  In the inkjet head 800 as described above, in addition to the nozzle plate 80 described above, for example, the wiring 839 can be formed using the exposure apparatus 100 and the exposure method described above. The specific exposure method is substantially the same procedure as that of the nozzle plate 80 described above and a vibration element 500 described later, and thus description thereof is omitted.

≪Vibration element≫
7A and 7B show a vibration element as an example of a product, in which FIG. 7A is a plan view (front view), FIG. 7B is a plan view (back view), and FIG. 7C is a side view. FIG. 8 is a diagram for explaining a method of forming the outer shape of the vibration element piece included in the vibration element shown in FIG. FIG. 9 is a diagram for explaining a method of patterning connection wirings included in the vibration element shown in FIG. 7 and 8 show the X axis, the Y ′ axis, and the Z ′ axis that are orthogonal to each other about the crystal axis of the quartz crystal, and the tip side of each of the illustrated arrows is indicated by “+ (plus)”. ", The base end side is"-(minus) ".

  A vibrating element 500 shown in FIGS. 7A and 7B is a so-called rotating Y-cut quartz substrate in which a vibration mode vibrates by thickness-shear vibration. For example, the vibrating element is formed of an AT-cut quartz substrate. It has a piece 50. In the vibration element piece 50, a first excitation electrode 530 is formed on the main surface on the + Y′-axis side, and a second excitation electrode 540 is formed on the main surface on the −Y′-axis side. Further, a first connection wiring 532 connected to the first excitation electrode 530 is formed on the main surface on the + Y ′ axis side, and connected to the second excitation electrode 540 on the main surface on the −Y ′ axis side. The second connection wiring 542 thus formed is formed. The main surface on the −Y′-axis side has a first connection electrode 531 electrically connected to the second excitation electrode 530 through the first connection wiring 532 and a second connection through the second connection wiring 542. A second connection electrode 541 electrically connected to the excitation electrode 540 is formed side by side.

  In the vibration element 500 as described above, the vibration element piece 50 and the first and second connection wirings 532 and 542 can be formed using the exposure apparatus 100 and the exposure method described above.

  For example, when forming the outer shape of the vibration element piece 50, first, as shown in FIG. 8A, a substrate 55 made of an AT-cut quartz substrate, and a positive type formed on both main surfaces of the substrate 55 are formed. An exposed substrate 5 having a resist film R is prepared.

  Next, the resist film R is exposed by the exposure method described above to form exposure patterns 551P and 552P as shown in FIG. 8B. Here, the substrate 55 formed of an AT-cut quartz substrate has anisotropy (etching anisotropy) with respect to etching, and the etching rate varies depending on the etching direction with respect to the crystal axis. Therefore, when the resist film R is exposed, the resist film R is irradiated with the laser beams LL1 and LL2 so as to obtain exposure patterns 551P and 552P in consideration of etching anisotropy.

  Next, as shown in FIG. 8C, the exposure patterns 551P and 552P are developed to obtain resist masks RM1 and RM2, and then the substrate 55 is etched through the resist masks RM1 and RM2. Thereafter, the outer shape of the vibration element piece 50 can be formed by removing the resist masks RM1 and RM2.

  In this way, if the outer shape of the vibration element piece 50 is formed by using the exposure method as described above, the positional deviation of the exposure patterns 551P and 552P can be reduced. Therefore, the etching anisotropy of the substrate 55 is taken into consideration. The exposure patterns 551P and 552P can be formed at desired positions. Therefore, the pattern shift due to the etching anisotropy can be reduced, and thus the vibration element piece 50 having a desired shape can be obtained.

  For example, when the first and second connection wirings 532 and 542 are manufactured, first, as shown in FIG. 9A, the metal film M and the positive resist film R are formed on both main surfaces of the vibration element piece 50. Are prepared in order. Next, the laser beams LL1 and LL2 are irradiated to form exposure patterns 553P and 554P corresponding to the shapes of the first and second connection wirings 532 and 542 as shown in FIG. 9B. Next, as shown in FIG. 9C, the exposure patterns 553P and 554P are developed to obtain resist masks RM3 and RM4, and then the metal film M is etched through the resist masks RM3 and RM4. Thereafter, the resist masks RM3 and RM4 are removed, whereby first and second connection wirings 532 and 542 as shown in FIG. 7 can be obtained.

  As described above, if the first and second connection wirings 532 and 542 are manufactured by using the exposure method as described above, the positional deviation of the exposure patterns 553P and 554P can be reduced. First and second connection wirings 532 and 542 can be provided.

  In the above description, the first and second excitation electrodes 530 and 540 are manufactured. However, the first and second excitation electrodes 530 and 540 and the first and second connection electrodes 531 and 541 are also described above. It can be manufactured by the method. For example, the first and second excitation electrodes 530 and 540, the first and second connection electrodes 531 and 541, and the first and second connection wirings 532 and 542 can be collectively manufactured in the same process.

  7 describes the AT-cut crystal resonator, but the configuration of the resonator is not limited to this. For example, an AT-cut crystal resonator such as a mesa type or an inverted mesa type may be used, or a tuning fork may be used. H-shape having a base, a pair of drive arms extending from the base to one side, and a pair of detection arms extending from the base to the other side Or a pair of detection arms extending from the base to both sides, and a pair of connection arms extending from the base to both sides in a direction orthogonal to the pair of detection arms. A WT type vibration type gyro sensor element having a pair of drive arms extending from both ends of one connecting arm to both sides and a pair of vibrating arms extending from both ends of the other connecting arm to both sides. There may be.

≪Wavelength tunable filter≫
FIG. 10 is a cross-sectional view showing a wavelength tunable filter as an example of a product.

  A wavelength tunable filter 600 shown in FIG. 10 includes a fixed substrate 610 and a movable substrate 620, both of which are formed of a glass plate, and these are bonded to face each other. Further, the fixed substrate 610 has a convex reflective film installation part 611 protruding from the periphery, and a fixed reflective film 630 is provided on the upper surface of the reflective film installation part 611. On the other hand, the movable substrate 620 includes an annular holding portion 621 that is thinner than the surroundings, and a movable portion 622 that is positioned inside the holding portion 621 and that can be displaced with respect to the fixed substrate 610 while elastically deforming the holding portion 621. A movable reflective film 640 is provided on the lower surface of the movable portion 622. The fixed reflection film 630 and the movable reflection film 640 are arranged to face each other via a gap G1, and the gap G1 can be adjusted by the electrostatic actuator 650.

  The electrostatic actuator 650 is disposed on the upper surface of the fixed substrate 610 so as to surround the reflection film installation portion 611 and is disposed on the lower surface of the movable substrate 620 so as to face the fixed electrode 651. The fixed electrode 651 is drawn out by the lead wiring 653, and the movable electrode 652 is drawn out by the lead wiring 654. In such an electrostatic actuator 650, the gap G1 can be adjusted using an electrostatic force generated by applying a voltage between the fixed electrode 651 and the movable electrode 652. In this way, by adjusting the gap G1, light having a predetermined target wavelength can be extracted from the inspection target light incident on the wavelength tunable filter 600.

  In the wavelength tunable filter 600 as described above, for example, the fixed electrode 651 and the lead-out wiring 653 can be formed using the exposure apparatus 100 and the exposure method described above. Similarly, the movable electrode 652 and the lead wiring 654 can be formed using the exposure apparatus 100 and the exposure method described above. The specific exposure method is substantially the same procedure as that of the nozzle plate 80 and the vibration element 500 described above, and a description thereof will be omitted.

≪Light emitting element≫
FIG. 11 is a cross-sectional view showing a light-emitting element as an example of a product. 12 is a cross-sectional view taken along line BB in FIG.

  A light emitting element 700 shown in FIGS. 11 and 12 is an SLD (super luminescent diode), and includes a substrate 702, a first cladding layer 704, an active layer 706, a second cladding layer 708, and a contact layer 709. In addition, the first electrode 712, the second electrode 714, and the insulating portion 720 are stacked.

  The substrate 702 is, for example, an n-type GaAs substrate. The first cladding layer 704 is, for example, an n-type InGaAlP layer. The second cladding layer 708 is, for example, a p-type InGaAlP layer. The active layer 706 has a multiple quantum well (MQW) structure in which, for example, three quantum well structures each composed of an InGaP well layer and an InGaAlP barrier layer are stacked.

  The active layer 706 includes a first side surface 731 on which the light emitting portion 730 is formed, a second side surface 732 and a third side surface 733 that are inclined with respect to the first side surface 731. The second and third side surfaces 732 and 733 are configured by inner peripheral surfaces of through holes 741 and 742 that penetrate the light emitting element 700, respectively. A part of the active layer 706 forms a gain region group 750 including a first gain region 751, a second gain region 752, and a third gain region 753, and a plurality of gain region groups are provided.

  In the light emitting device 700 having such a configuration, when a forward bias voltage of a pin diode including the first cladding layer 704, the active layer 706, and the second cladding layer 708 is applied between the first electrode 712 and the second electrode 714. Then, gain regions 751, 752, and 753 are generated in the active layer 706, and recombination of electrons and holes occurs in the gain regions 751, 752, and 753, and light emission occurs. With this generated light as the starting point, stimulated emission occurs in a chain, and the light intensity is amplified in the gain regions 751, 752, and 753. Then, the light whose intensity has been amplified is emitted as light L from the light emitting unit 730.

  The contact layer 709 and a part of the second cladding layer 708 form a columnar portion 722. The planar shape of the columnar portion 722 is the same as the planar shape of the gain region group 750. In other words, the current path between the first and second electrodes 712 and 714 is determined by the planar shape of the columnar portion 722, and as a result, the planar shape of the gain region group 750 is determined.

  The first electrode 712 is formed on the entire surface under the substrate 702, and the second electrode 714 is formed on the contact layer 709. The planar shape of the second electrode 714 is the same as the planar shape of the gain region group 750, for example. The first and second electrodes 712 and 714 are, for example, a metal laminate in which a Cr layer, an AuZn layer, and an Au layer are laminated in this order.

  In the light emitting element 700 as described above, for example, the second electrode 714 can be formed using the exposure method described above. Further, for example, the through holes 741 and 742 can be formed using the exposure method described above. Note that a specific exposure method is substantially the same procedure as that of the nozzle plate 80 and the vibration element 500 described above, and a description thereof will be omitted.

≪Metal mask≫
FIG. 13 is a cross-sectional view showing a base material having a metal mask as an example of a product. 14 is a cross-sectional view showing a method for manufacturing the metal mask shown in FIG.

  A metal mask 910 shown in FIG. 13 is a mask used when patterning a base material 900 such as a crystal substrate or a silicon substrate by dry etching, for example. Such a metal mask 910 can also be formed using the exposure apparatus 100 and the exposure method described above. Briefly, first, a base material 900 is prepared, and as shown in FIG. 14A, a seed layer 920 for plating growth is formed on the front and back surfaces of the base material 900 by sputtering, vapor deposition, or the like. Next, a resist film R is formed on the seed layer 920, and this resist film R is exposed by the above-described exposure method, whereby openings corresponding to the shape of the metal mask 910 are formed as shown in FIG. A resist mask RM having is obtained. Next, a plating layer 930 is formed in the opening of the resist mask RM by electrolytic plating, electroless plating, or the like, and the seed layer 920 protruding from the resist mask RM and the plating layer 930 is removed, whereby FIG. As shown in c), a metal mask 910 is obtained.

DESCRIPTION OF SYMBOLS 100 ... Exposure apparatus 110 ... Holding unit 120A ... 1st irradiation part 120B ... 2nd irradiation part 130A, 130B ... Laser light source 140 ... Control part 150A, 150B ... Optical lens system 151 ... Collimator lens 152 …… first zoom lens 153 …… second zoom lens 154 …… first cylindrical lens 155 …… fθ lens 156 …… second cylindrical lens 160A, 160B …… polygon mirror 161 …… reflecting surfaces 170A, 170B …… Mirror 200, 5 ... Substrate to be exposed 20, 55 ... Substrate 201 ... Front side 202 ... Back side 211P, 212P ... Exposure pattern 90 ... Test piece 9 ... Substrate 95, 96 ... Openings 951, 961 ... ... Edge 500 ... Vibrating element 50 ... Vibrating element piece 530 ... First excitation electrode 40 …… Second excitation electrode 531 …… First connection electrode 541 …… Second connection electrode 532 …… First connection wire 542 …… Second connection wire 551P, 552P, 553P, 554P …… Exposure pattern 600 …… Wavelength Variable filter 610 …… Fixed substrate 611 …… Reflective film installation portion 620 …… Moving substrate 621 …… Holding portion 622 …… Moving portion 630 …… Fixed reflective film 640 …… Moving reflective film 650 …… Electrostatic actuator 651 …… Fixed electrode 652... Movable electrode 653... Lead wire 654... Lead wire 700 .. Light emitting element 702 .. Substrate 704... First clad layer 706... Active layer 708. 712 …… First electrode 714 …… Second electrode 720 …… Insulating portion 722 …… Columnar portion 730 …… Light emitting portion 731 …… First side surface 32 …… Second side surface 733 …… Third side surface 741, 742 …… Through hole 750 …… Gain region group 751 …… First gain region 752 …… Second gain region 753 …… Third gain region 800 …… Inkjet Head 810 ... Multilayer substrate 80 ... Nozzle plate 85 ... Nozzle hole 851 ... Small diameter hole 852 ... Large diameter hole 812 ... Flow path forming substrate 813 ... Vibration plate 814 ... Reservoir forming substrate 815 ... Compliance substrate 820 …… Piezoelectric element 830 …… Wiring forming part 831, 832 …… Inclined surface 833 …… Top surface 839 …… Wiring 840 …… IC package 890 …… Pressure generating chamber 900 …… Base material 910 …… Metal mask 920 ... Seed layer 930 ... Plating layer G1 ... Gap I ... Ink J ... Axis LL1, LL2 ... Laser light L1, L2 ... ... Scanning lines L1 ', L2' ... Exposure line d ... Distance L ... Light M ... Metal film R, R9 ... Resist film RM, RM1, RM2, RM3, RM4 ... Resist mask

Claims (6)

The first surface of the object having the first surface and the second surface facing each other is scanned and irradiated with the first exposure light, and the second surface is scanned and irradiated with the second exposure light. An irradiation step of moving the object to be exposed in a direction intersecting a scanning direction of one exposure light and a scanning direction of the second exposure light,
An exposure method characterized in that an exposure pattern on the first surface exposed by irradiation with the first exposure light is different from an exposure pattern on the second surface exposed by irradiation with the second exposure light. .   An adjustment step of adjusting the irradiation position of the first exposure light on the first surface and the irradiation position of the second exposure light on the second surface so as to overlap in a plan view of the object to be exposed; The exposure method according to claim 1.   The exposure method according to claim 1, wherein the object to be exposed includes a piezoelectric material.   The exposure method according to any one of claims 1 to 3, wherein an exposure pattern on the first surface and an exposure pattern on the second surface are shifted in accordance with the etching anisotropy of the object to be exposed. The object to be exposed is
A substrate,
A resist layer provided on each of the front side and the back side of the substrate;
A metal layer provided between the substrate and the resist layer;
The exposure method according to claim 1, comprising: A first irradiation unit that scans and irradiates a first exposure light onto a first surface of an object to be exposed having a first surface and a second surface facing each other;
A second irradiation unit that scans and irradiates the second surface with second exposure light; and
A moving unit that moves the object to be exposed in a direction intersecting the scanning direction of the first exposure light and the scanning direction of the second exposure light;
A control unit for controlling the first irradiation unit, the second irradiation unit, and the moving unit,
The control unit irradiates the first exposure light to the first surface, moves the object to be exposed while irradiating the second exposure light to the second surface, and moves the first exposure. It is possible to control the exposure pattern of the first surface exposed by light irradiation to be different from the exposure pattern of the second surface exposed by irradiation of the second exposure light. Exposure equipment to do.

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