JP2016031489A - Exposure method and exposure apparatus - Google Patents

Abstract

The present invention provides an exposure method and an exposure apparatus capable of reducing a positional shift between an exposure pattern on a first surface side and an exposure pattern on a second surface side of an object to be exposed. An exposure method includes a step of scanning a laser beam LL1 in a first direction included in a back surface 202 of a substrate to be exposed 200 having a front surface 201 and a back surface 202, and irradiating the back surface 202 with the laser light LL1. A step of moving the substrate to be exposed 200 in a second direction intersecting the first direction, and a step of irradiating the surface 201 with the laser beam LL2 by scanning the laser beam LL2 along the first direction. The start of the step of irradiating the laser beam LL2 is delayed from the start of the step of irradiating the laser beam LL1, and in the step of irradiating the laser beam LL2, the movement direction of the substrate 200 to be exposed is higher than the laser beam LL1. The laser beam LL1 is irradiated in front. [Selection] Figure 2

Description

  The present invention relates to an exposure method and an exposure apparatus.

  As a sample processing method, a method using photolithography processing and etching processing is known. Patent Document 1 discloses an exposure apparatus for performing an exposure process included in photolithography. The exposure apparatus disclosed in Patent Document 1 is a double-sided exposure apparatus that can simultaneously irradiate laser light onto the front and back surfaces of a substrate coated with a resist. In addition, this double-sided exposure apparatus is equipped with a sensor that detects the irradiation position of the laser beam irradiated on the front surface side and the irradiation position of the laser beam irradiated on the back surface side, and this sensor determines the irradiation position of each laser It is detected and controlled so that the irradiation positions of the respective lasers coincide with each other in a plan view.

  However, in such a double-sided exposure apparatus that matches the irradiation position of each laser beam using such a sensor, it is difficult to sufficiently match the irradiation position of each laser beam in plan view, and the obtained exposure pattern is on the front and back surfaces. There was a problem of shifting. Thus, in the exposure method using the conventional exposure apparatus, the alignment accuracy of the exposure pattern on the front and back surfaces is not sufficient.

JP2013-186291A

  An object of the present invention is to provide an exposure method and an exposure apparatus that can reduce the positional deviation between the exposure pattern on the first surface side and the exposure pattern on the second surface side of the object to be exposed.

SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following application examples.
[Application Example 1]
In the exposure method of the present invention, first exposure light is scanned in a first direction included in the first surface of an object to be exposed having a first surface and a second surface facing each other, and the first surface is scanned with the first surface. Irradiating with exposure light;
Moving the object to be exposed in a second direction intersecting the first direction;
Scanning the second exposure light along the first direction and irradiating the second exposure light on the second surface,
The start of the step of irradiating the second exposure light is delayed from the start of the step of irradiating the first exposure light,
In the step of irradiating the second exposure light, the second exposure light is irradiated on the front side in the moving direction of the object to be exposed with respect to the first exposure light.

  Accordingly, the second exposure light can be irradiated on the second surface so that the positional deviation of the exposure pattern on the second surface side with respect to the exposure pattern on the first surface side is reduced. Therefore, it is possible to reduce the positional deviation between the exposure pattern on the first surface side and the exposure pattern on the second surface side.

[Application Example 2]
In the exposure method of the present invention, the distance in the second direction between the scanning line of the first exposure light and the scanning line of the second exposure light in a plan view of the object to be exposed is d [μm], When the amount of movement of the exposure object per scan of the first exposure light and the second exposure light is p [μm / time],
It is preferable to start the step of irradiating the second exposure light after scanning n = (d / p) [times] after starting the step of irradiating the first exposure light.

  Accordingly, the second exposure light can be irradiated onto the second surface so that the positional deviation of the exposure pattern on the second surface side with respect to the exposure pattern on the first surface side is further reduced.

[Application Example 3]
The exposure method of the present invention preferably further includes a step of measuring the distance d [μm].

  Thereby, the positional relationship between the irradiation position of the first exposure light on the first surface and the irradiation position of the second exposure light on the second surface can be grasped. Therefore, based on this positional relationship, the second surface can be irradiated with the second exposure light so that the positional deviation of the exposure pattern on the second surface side with respect to the exposure pattern on the first surface side is further reduced. .

[Application Example 4]
An exposure apparatus of the present invention holds an object to be exposed having a first surface and a second surface that face each other, and moves the object to be exposed in a second direction that intersects a first direction included in the first surface. And
A first irradiation unit that scans the first exposure light in the first direction and irradiates the first exposure light on the first surface;
A second irradiation unit that scans the second exposure light along the first direction and irradiates the second exposure light on the second surface;
A control unit that controls the moving unit, the first irradiation unit, and the second irradiation unit;
The control unit controls the first irradiation unit and the second irradiation unit so that the start of irradiation of the second exposure light is delayed from the start of irradiation of the first exposure light,
The first irradiation unit and the second irradiation unit are configured such that the second exposure light is irradiated on the front side in the moving direction of the object to be exposed with respect to the first exposure light. To do.

  Accordingly, the second exposure light can be irradiated on the second surface so that the positional deviation of the exposure pattern on the second surface side with respect to the exposure pattern on the first surface side is reduced. Therefore, it is possible to reduce the positional deviation between the exposure pattern on the first surface side and the exposure pattern on the second surface side.

It is a block diagram of the exposure apparatus which concerns on suitable embodiment of this invention. It is a figure which shows the scanning direction of the laser beam of the exposure apparatus shown in FIG. 1, and the moving direction of a to-be-exposed board | substrate. It is a figure which shows the vibration element piece obtained using the to-be-exposed board | substrate, (a) is a top view, (b) is the sectional view on the AA line in the figure (a). It is sectional drawing for demonstrating the adjustment process included in the exposure method of the to-be-exposed board | substrate shown in FIG. It is sectional drawing for demonstrating the exposure process (irradiation process) included in the exposure method of the to-be-exposed board | substrate shown in FIG. The vibration element as an example of a product is shown, (a) is a plan view (front view), (b) is a plan view (back view), and (c) is a sectional view. It is sectional drawing which shows the wavelength tunable filter as an example of a product. It is sectional drawing which shows the light emitting element as an example of a manufactured product. It is the BB sectional view taken on the line in FIG. It is sectional drawing which shows the inkjet head as an example of a product. It is sectional drawing which shows the base material which has a metal mask as an example of a manufactured product. It is sectional drawing which shows the manufacturing method of the metal mask shown in FIG.

  Hereinafter, an exposure method and an exposure apparatus of the present invention will be described in detail based on preferred embodiments shown in the accompanying drawings.

  FIG. 1 is a block diagram of an exposure apparatus according to a preferred embodiment of the present invention. FIG. 2 is a diagram showing the scanning direction of the laser beam and the moving direction of the substrate to be exposed of the exposure apparatus shown in FIG. 3A and 3B are diagrams showing a vibration element piece obtained using the substrate to be exposed, in which FIG. 3A is a plan view and FIG. 3B is a cross-sectional view taken along line AA in FIG. FIG. 4 is a cross-sectional view for explaining an adjustment process included in the exposure method of the substrate to be exposed shown in FIG. FIG. 5 is a cross-sectional view for explaining an exposure process (irradiation process) included in the exposure method of the substrate to be exposed shown in FIG. In FIG. 1, FIG. 2, FIG. 4, and FIG. 5, for convenience of explanation, the x axis, the y axis, and the z axis are illustrated as three axes that are orthogonal to each other. The same applies to FIGS. 6 to 11 described later. Hereinafter, a direction parallel to the x-axis is also referred to as “x-axis direction”, a direction parallel to the y-axis is also referred to as “y-axis direction”, and a direction parallel to the z-axis is also referred to as “z-axis direction”.

1. Exposure Device An exposure device 100 shown in FIG. 1 is an exposure device used for exposing a substrate to be exposed (exposure object) 200 including a resist film R applied to the front and back surfaces of a substrate 20. Such an exposure apparatus 100 includes a holding unit (moving unit) 110 that moves the held substrate to be exposed 200, and laser light (first exposure light) LL1 on the back surface (first surface) 202 side of the substrate to be exposed 200. 120 A of 1st irradiation parts to irradiate (incident), and 2nd irradiation part 120B which irradiates (incidents) laser beam (2nd exposure light) LL2 to the surface (2nd surface) 201 side of the to-be-exposed board | substrate 200 have. In addition, the exposure apparatus is a double-sided exposure type capable of exposing the front surface 201 and the back surface 202 of the substrate 200 to be exposed simultaneously (within the same process).

[First irradiation unit]
The first irradiation unit 120A includes a laser light source 130A that emits laser light LL1, an optical lens system 150A that optically corrects the laser light LL1, and a polygon mirror 160A that scans the laser light LL1.

  The laser light source 130A is controlled by the control unit 140, and emits a laser beam LL1 at a predetermined timing so that the back surface 202 can be exposed with a predetermined pattern. The laser beam LL1 emitted from the laser light source 130A is reflected by the mirror 170A and then enters the reflecting surface 161 of the polygon mirror 160A. The polygon mirror 160A is rotationally driven around the axis J at a substantially constant speed by a driving source (not shown) such as a motor, and scans the incident laser beam LL1 one-dimensionally.

  As shown in FIG. 1, the optical lens system 150A includes a collimator lens 151, a first zoom lens 152, a second zoom lens 153, and a first cylindrical lens 154 disposed between the laser light source 130A and the mirror 170A. And an fθ lens 155 and a second cylindrical lens 156 disposed between the polygon mirror 160A and the holding unit 110.

  Among these lenses, the collimator lens 151 is a lens for making the laser beam LL1 into parallel light. The first zoom lens 152 is a lens that expands the laser beam LL1 in the z-axis direction, and the second zoom lens 153 is a lens that expands the laser beam LL1 in the y-axis direction. Since the cross-sectional shape of the laser light LL1 emitted from the laser light source 130A is generally not a perfect circle (ellipse), the cross-sectional shape (aspect ratio) of the laser light LL1 is changed by the first and second zoom lenses 152 and 153. Correction is made so that the cross-sectional shape is almost a perfect circle. Further, the first cylindrical lens 154 and the second cylindrical lens 156 correct the deviation of the scanning position of the laser beam LL1 due to the so-called “surface tilt” of the reflection surface 161 of the polygon mirror 160A, and are the same regardless of the presence or absence of the surface tilt. This is a lens for imaging the laser beam LL1 at a position. The fθ lens 155 is a lens for scanning the exposed substrate 200 with the laser light LL1 at a constant speed. By providing the optical lens system 150A having such a configuration, the exposed substrate 200 can be irradiated with the laser light LL1 with high accuracy.

  In the first irradiation unit 120A having such a configuration, the laser beam LL1 is scanned once (main scan) along the x-axis direction on the back surface 202 by one reflecting surface 161 of the polygon mirror 160A (see FIG. 2). ). Thereby, the back surface 202 can be exposed one-dimensionally (linearly). Hereinafter, a locus on the back surface 202 of the laser beam LL1 by one main scanning is defined as a scanning line L1, and a portion exposed by the scanning line L1 is defined as an exposure line L1 '.

[Second irradiation section]
The second irradiation unit 120B includes a laser light source 130B that emits laser light LL2, an optical lens system 150B that optically corrects the laser light LL2, a polygon mirror 160B that scans the laser light LL2, and a mirror 170B. Yes. Such 2nd irradiation part 120B is the structure similar to 120 A of 1st irradiation parts mentioned above. Therefore, detailed description of the second irradiation unit 120B is omitted.

  Such a second irradiation unit 120B is arranged to face the first irradiation unit 120A via the holding unit 110 (the substrate to be exposed 200 held by the holding unit 110). More specifically, the first irradiation unit 120A is positioned on the back surface 202 side of the substrate to be exposed 200 held by the holding unit 110, and the second irradiation unit 120B is positioned on the front surface 201 side. By arranging the first and second irradiation units 120A and 120B in this manner, the back surface 202 side of the substrate to be exposed 200 is irradiated with the laser light LL1 from the first irradiation unit 120A, and the second irradiation is performed on the front surface 201 side. The laser beam LL2 from the part 120B can be irradiated, and the exposed substrate 200 can be simultaneously exposed (exposed in the same exposure process) from the front surface 201 side and the back surface 202 side.

  Further, the second irradiation unit 120B is arranged so that the main scanning direction of the laser light LL2 is along the main scanning direction of the laser light LL1. That is, the laser beam LL2 is main-scanned along the x-axis direction on the surface 201, whereby the surface 201 can be exposed one-dimensionally (linearly) (see FIG. 2). By aligning the main scanning directions of the laser beams LL1 and LL2 in this way, the operation direction (sub-scanning direction) of the substrate to be exposed 200 along the moving direction of the holding unit 110 is changed to the main scanning direction of the laser beams LL1 and LL2. Since the substrate can be orthogonal to each other, the exposed substrate 200 can be efficiently exposed. In the following description, a locus on the surface 201 of the laser beam LL2 by one main scanning is defined as a scanning line L2, and a portion exposed by the scanning line L2 is defined as an exposure line L2 '.

  Further, the second irradiation unit 120B is located on the + z axis side as a whole with respect to the first irradiation unit 120A, and as shown in FIG. 2, the laser beam LL2 is more in the sub-scanning direction than the laser beam LL1. It is configured to irradiate the front side.

  In addition, the laser beam LL1 from the first irradiation unit 120A is designed so that the exposed substrate 200 is irradiated with the beam waist (the portion with the smallest diameter (focal point)) and the region with a small beam diameter in the vicinity thereof. Similarly, the laser beam LL2 from the second irradiation unit 120B is designed so that the substrate to be exposed 200 is irradiated with the beam waist portion and a region with a small beam diameter in the vicinity thereof. Thereby, the to-be-exposed substrate 200 can be finely and accurately exposed.

  Further, the spot shape and area on the back surface 202 of the laser beam LL1 so that the scanning line L1 by the laser beam LL1 and the scanning line L2 by the laser beam LL2 have substantially the same width (length along the sub-scanning direction). The spot shape and the area on the surface 201 of the laser beam LL2 are designed to be substantially equal.

[Holding unit]
The holding unit 110 is moved in a direction (sub-scanning direction) intersecting the main scanning direction of the laser beams LL1 and LL2 by the control unit 140 while holding the exposed substrate 200. Therefore, the laser beam LL1 is two-dimensionally moved with respect to the substrate to be exposed 200 held by the holding unit 110 by scanning the laser beams LL1 and LL2 in the main scanning direction while moving the holding unit 110 in the sub-scanning direction. , LL2 are respectively irradiated, so that the resist film R can be exposed in a predetermined pattern.

  The moving direction (sub-scanning direction) of the holding unit 110 is not particularly limited, but it is preferable that the holding unit 110 is closer to the vertical direction. Thereby, since the to-be-exposed board | substrate 200 hold | maintained at the holding | maintenance unit 110 will be in the state stood with respect to the horizontal surface, for example, compared with the state to which the to-be-exposed substrate 200 followed the horizontal surface, the bending of the to-be-exposed substrate 200 was carried out. Can be reduced. Therefore, the laser beams LL1 and LL2 can be accurately irradiated to the exposed substrate 200, and the exposed substrate 200 can be accurately exposed.

  The shape of the holding unit 110 is not particularly limited, but in the present embodiment, the holding unit 110 is configured to hold the edge of the substrate 200 to be exposed. Thereby, both the front surface 201 and the back surface 202 of the substrate 200 to be exposed can be exposed.

[Control unit]
A control unit 140 shown in FIG. 1 controls each unit of the exposure apparatus 100. For example, the control unit 140 controls driving of the laser light sources 130A and 130B, the polygon mirrors 160A and 160B, and the holding unit 110 so that the front surface 201 and the back surface 202 are exposed in a predetermined pattern.

  The configuration of the exposure apparatus 100 has been briefly described above. According to such an exposure apparatus 100, the substrate 200 to be exposed can be exposed in a predetermined pattern by synchronizing the movement of the holding unit 110 and the emission timing of the laser beams LL1 and LL2. For this reason, an exposure mask used in an exposure apparatus as conventionally known (for example, an apparatus described in JP-A-2006-210426) is not required, and the manufacturing time and manufacturing cost of the exposure mask can be saved. . Therefore, the exposure apparatus 100 can perform exposure inexpensively and quickly with respect to the conventional exposure apparatus.

  The configuration of the exposure apparatus 100 is not limited to the above configuration as long as the substrate to be exposed 200 can be exposed by scanning light. For example, in each of the optical lens systems 150A and 150B, at least one of the various lenses described above may be omitted, or a lens having a function other than the various lenses described above may be included. As a means for scanning the laser beams LL1 and LL2, a Si MEMS device that performs optical scanning by rotating the mirror surface around the axis J may be used instead of the polygon mirrors 160A and 160B. In the above configuration, the holding unit 110 has a fixed posture with respect to the first and second irradiation units 120A and 120B, but the holding unit 110 may be tilted and rotatable. Conversely, the first and second irradiation units 120A and 120B may be inclined and rotated with respect to the holding unit 110. In the above configuration, the holding unit 110 moves in the sub-scanning direction with respect to the first and second irradiation units 120A and 120B. The two irradiation units 120A and 120B may be configured to move in the sub-scanning direction. Further, the holding unit 110 and the first and second irradiation units 120A and 120B may both be configured to move in the sub-scanning direction.

2. Next, a method for manufacturing, for example, a vibrating element piece 540 as shown in FIG. 3 from the exposed substrate 200 using the exposure apparatus 100 will be described.

  The exposed substrate 200 includes a substrate 20 and a resist film R formed on each of the front and back surfaces of the substrate 20.

  Further, as shown in FIG. 3, the manufactured vibration element piece 540 is a tuning fork type vibration element piece formed of a quartz substrate, and includes a base 510 and a pair of vibration arms 520 and 530 extending from the base 510. And have. The vibration element piece 540 can be used as a tuning fork type crystal vibration element by providing an electrode or the like on the surface thereof.

  Such a vibrating element piece 540 is obtained by exposing and developing the resist film R of the exposed substrate 200 to obtain a resist mask (not shown), and then etching the substrate 20 through the resist mask. Can do. The exposure method of the present invention is applied to the exposure of the substrate to be exposed 200.

Hereinafter, a method for exposing the substrate to be exposed 200 will be described in detail.
The exposure method of the to-be-exposed board | substrate 200 has an adjustment process and an exposure process (irradiation process).

  The resist film R may be a positive type in which an exposed portion (a portion irradiated with the laser beam LL1 or LL2) may be removed, or a negative type in which the exposed portion remains. Hereinafter, the positive type case will be described as a representative.

[Adjustment process]
First, before exposing the exposed substrate 200, the irradiation timing of the laser beam LL2 (in order to reduce the positional deviation between the exposure patterns on the back surface 202 side and the front surface 201 side obtained by the irradiation with the laser beams LL1 and LL2 ( Adjust the start of irradiation.

  Specifically, first, a test piece 90 having the same configuration as that of the substrate 200 to be exposed, that is, a substrate 9 as shown in FIG. 4A, and a resist film R9 applied to the front and back surfaces of the substrate 9 are provided. A test piece 90 is prepared. Then, the test piece 90 is held in the holding unit 110.

  Next, while synchronizing the movement of the holding unit 110 and the timing of irradiation of the laser beams LL1 and LL2, the holding unit 110 is moved in the sub-scanning direction while performing main scanning of the laser beams LL1 and LL2, respectively. Specifically, when each of the two polygon mirrors 160A and 160B makes one rotation, main scanning of the laser beams LL1 and LL2 is performed 8 times, which is the number of the reflecting surfaces 161 of the polygon mirror 160A, and the sub-scanning of the test piece 90 is performed. Movement in the scanning direction is performed for eight scanning lines L1 and L2. Thereby, portions corresponding to the scanning lines L1 and L2 are exposed. As a result, as shown in FIG. 4B, eight exposure lines L1 ′ and L2 ′ are arranged along the sub-scanning direction, respectively, on the resist film R9 on the front surface 201 side and the back surface 202 side of the test piece 90. Two-dimensional (for example, a quadrangular shape in plan view) exposure patterns are formed.

  Next, after developing the resist film R9 of the test piece 90 to obtain a resist mask (not shown), the substrate 9 is etched through the resist mask. Thereafter, by removing the resist mask, two openings 95 and 96 are formed in the substrate 9 as shown in FIG. The opening 95 corresponds to a portion exposed by irradiation with the laser light LL1, and the opening 96 corresponds to a portion exposed by irradiation with the laser light LL2.

  Next, using an optical microscope, for example, a distance (separation distance) d [μm] between the center of the opening 95 and the center of the opening 96 is measured. This distance d corresponds to the separation distance between the scanning line L1 and the scanning line L2 in the sub-scanning direction.

  Further, based on the rotational speeds of the polygon mirrors 160A and 160B controlled by the control unit 140 and the moving speed of the holding unit 110, the movement amount p [μm / m of the exposed substrate 200 per main scanning of the laser beams LL1 and LL2 is determined. Times].

  Then, based on the distance d [μm] and the movement amount p [μm / time], the difference in the irradiation position of the laser beam LL2 with respect to the irradiation position of the laser beam LL1 is determined as the number of scanning lines L1, that is, the laser beam LL1. The number of scans is determined as n = p / d [times].

  Therefore, if the irradiation of the laser beam LL2 is started after the start of the irradiation of the laser beam LL1 n = p / d [times] (the driving of the second irradiation unit 120B is started), 1 is applied to the first exposure line L1 ′. The laser beam LL2 can be irradiated so that the main scanning line L2 (exposure line L2 ′) substantially overlaps in plan view. Then, the laser beam is arranged such that the second, third,... Scanning line L2 (exposure line L2 ′) substantially overlaps the second, third,. Light LL2 can be irradiated. Thus, if the start of the irradiation of the laser beam LL2 is adjusted in consideration of the relative position of the scanning line L2 with respect to the exposure line L1 ′, the exposure pattern obtained by the irradiation of the laser beam LL1 and the irradiation of the laser beam LL2 can be obtained. The positional deviation between the exposed patterns can be reduced.

  Further, by observing the sharpness (roundness, dullness, etc.) of the edge 951 of the opening 95 and the edge 961 of the opening 96 with an optical microscope, the spot shapes, areas, and exposure amounts of the laser beams LL1 and LL2 are observed. You can also check for differences. If the edges 951 and 961 have different sharpness, the incident angles of the laser beams LL1 and LL2 with respect to the exposed substrate 200 are set so that the spot shapes, areas, and exposure amounts of the laser beams LL1 and LL2 are substantially equal. The intensity of the laser beams LL1 and LL2 is adjusted.

  In this adjustment step, the main scanning and the sub-scanning are performed eight times, but the number of main scanning and sub-scanning is not limited to this, and may be one time or a plurality of times other than eight.

  Moreover, in this adjustment process, the difference of the irradiation position of laser beam LL1 and LL2 was calculated | required by confirming the relative position of the opening parts 95 and 96 obtained by exposing and developing the test piece 90, and etching. However, the method for obtaining the difference between the irradiation position of the laser beam LL2 and the irradiation position of the laser beam LL1 is not limited to this. For example, in the case of the test piece 90 including the substrate 9 having transparency, a resist mask (not shown) obtained by exposing and developing the resist film R without forming the openings 95 and 96 in the substrate 9. It is also possible to obtain the difference between the irradiation positions of the laser beams LL1 and LL2.

[Exposure process]
Next, laser light LL1 and LL2 are irradiated to the to-be-exposed board | substrate 200, and the surface 201 and the back surface 202 are exposed.
Specifically, first, the exposed substrate 200 is held by the holding unit 110.

  Next, the holding unit 110 is moved in the sub-scanning direction while performing main scanning with the laser beam LL1 while synchronizing the movement of the holding unit 110 and the timing of irradiation with the laser beam LL1 in accordance with a command from the control unit 140. The substrate to be exposed 200 is sub-scanned. Thereby, the laser beam LL1 is irradiated to the resist film R on the back surface 202 side, and the portion is exposed (see FIG. 5A).

  Next, after the laser beam LL1 is scanned n times, irradiation with the laser beam LL2 is started (see FIG. 5B). As a result, the laser beam LL2 is applied to the resist film R on the surface 201 side so that the first scanning line L2 (exposure line L2 ′) substantially overlaps the first exposure line L1 ′ in plan view. . Then, the laser beam is applied so that the second, third,... Scanning line L2 (exposure line L2 ′) substantially overlaps the second, third,... Exposure line L1 ′. The light LL2 is irradiated. In this way, the laser beam LL1 is irradiated to the resist film R on the back surface 202 side, and the laser beam LL2 is irradiated to the resist film R on the front surface 201 side, and the portions corresponding to the scanning lines L1 and L2 are exposed. The

  After the irradiation of the laser beam LL1 is not irradiated (OFF), after the laser beam LL2 has been scanned n times, the irradiation of the laser beam LL2 is not irradiated (OFF). As a result, as shown in FIG. 5C, exposure patterns 211P and 212P that are substantially overlapped in plan view are formed.

  Thus, in this embodiment, since the start of irradiation of the laser beam LL2 is adjusted in the adjustment step, the positional deviation between the obtained exposure patterns 211P and 212P can be further reduced.

  In the adjustment step, the spot shapes, areas, and exposure amounts of the laser beams LL1 and LL2 are adjusted so as to be more uniform. Variation in occurrence of excessive portions can be reduced, and the front surface 201 and the back surface 202 can be more uniformly exposed. Therefore, the obtained exposure patterns 211P and 212P can be made more uniform.

  Conventionally, when the positional deviation of the exposure patterns 211P and 212P has occurred, it has been necessary to recreate the exposure mask in order to correct the deviation, whereas in the present embodiment, in the adjustment step, It is only necessary to adjust the start of irradiation with the laser beam LL2 again. Even in this respect, in the present embodiment, exposure can be performed quickly and inexpensively with respect to the conventional exposure method.

  In the present embodiment, the exposure patterns 211P and 212P have been described as having the same positional relationship on the front and back, but the exposure pattern is intentionally shifted or the pattern is changed on the front and back. The present invention can also be applied to.

  As described above, after the exposure process, the resist film R is developed to obtain a resist mask (not shown), and then the substrate 20 is etched through the resist mask to remove the resist mask. Thus, the vibration element piece 540 as shown in FIG. 3 can be obtained.

  The exposure method and the exposure apparatus of the present invention have been described based on the illustrated embodiment. However, the present invention is not limited to this, and the configuration of each part is an arbitrary configuration having the same function. Can be replaced. In addition, any other component may be added to the present invention.

  In the above description, the vibration element piece 540 has been described as a product (an object including a substrate to be exposed) that can be manufactured using the exposure method and the exposure apparatus of the present invention. It is not limited to 540. Hereinafter, some specific examples of the product will be exemplified. However, the product is not limited to the examples given below.

≪Vibration element≫
6A and 6B show a vibration element as an example of a product, where FIG. 6A is a plan view (front view), FIG. 6B is a plan view (back view), and FIG. 6C is a cross-sectional view.

  A vibration element 500 shown in FIG. 6 includes a tuning-fork type vibration element piece 540 made of a quartz substrate as described above, and a pair of excitation electrodes 551 and 552 arranged on the vibration element piece 540. ing. Further, the excitation electrodes 551 are disposed on the upper and lower surfaces of the vibrating arm 520 and both side surfaces of the vibrating arm 530, and the excitation electrodes 551 disposed on both side surfaces of the vibrating arm 530 are disposed at the distal end portion of the vibrating arm 530. It is electrically connected through a frequency adjusting collar (metal film) 553. On the other hand, the excitation electrodes 552 are disposed on both side surfaces of the vibrating arm 520 and the upper and lower surfaces of the vibrating arm 530, and the excitation electrodes 552 disposed on both side surfaces of the vibrating arm 520 are disposed at the distal end portion of the vibrating arm 520. It is electrically connected through a frequency adjusting weight portion (metal film) 553. In such a vibration element 500, by applying an alternating voltage between the excitation electrodes 551 and 552, the vibrating arms 520 and 530 bend and vibrate in the in-plane reverse phase mode.

  In the vibration element 500 as described above, in addition to forming the outer shape of the vibration element piece 540 as described above, for example, when forming the excitation electrodes 551 and 552 and the weight portion 553, the above-described exposure apparatus 100 and An exposure method can be used. Briefly, first, a metal film and a resist film are sequentially formed on the vibration element piece 540, the resist film is exposed by the exposure method described above, and then developed, whereby the excitation electrodes 551 and 552 and the weight portion are formed. A resist mask corresponding to the outer shape of 553 is obtained. Then, by etching the metal film through this resist mask, the excitation electrodes 551 and 552 and the weight portion 553 are obtained, and the vibration element 500 is obtained.

  By manufacturing the vibration element 500 in this way, the yield of the vibration element 500 can be improved. Further, since the frequency deviation of the manufactured vibration element 500 is reduced, the weight portion 553 for frequency adjustment can be made smaller (thin) accordingly.

  6 (and FIG. 3), the tuning fork type vibrator has been described. However, the configuration of the vibrator is not limited to this, and may be, for example, a double tuning fork type vibrator, a mesa type, An AT-cut quartz resonator such as an inverted mesa type may be used, and it has a base, a pair of driving arms extending from the base to one side, and a pair of detection arms extending from the base to the other side. It may be an H-type vibratory gyro sensor element, a base, a pair of detection arms extending from the base to both sides, and a pair of connections extending from the base to both sides in a direction orthogonal to the pair of detection arms A WT vibration gyro sensor having an arm, a pair of driving arms extending from both ends of one connecting arm to both sides, and a pair of vibrating arms extending from both ends of the other connecting arm to both sides It may be an element.

≪Wavelength tunable filter≫
FIG. 7 is a cross-sectional view showing a wavelength tunable filter as an example of a product.

  A wavelength tunable filter 600 shown in FIG. 7 includes a fixed substrate 610 and a movable substrate 620, both of which are formed of a glass plate, and these are bonded to face each other. Further, the fixed substrate 610 has a convex reflective film installation part 611 protruding from the periphery, and a fixed reflective film 630 is provided on the upper surface of the reflective film installation part 611. On the other hand, the movable substrate 620 includes an annular holding portion 621 that is thinner than the surroundings, and a movable portion 622 that is positioned inside the holding portion 621 and that can be displaced with respect to the fixed substrate 610 while elastically deforming the holding portion 621. A movable reflective film 640 is provided on the lower surface of the movable portion 622. The fixed reflection film 630 and the movable reflection film 640 are arranged to face each other via a gap G1, and the gap G1 can be adjusted by the electrostatic actuator 650.

  The electrostatic actuator 650 is disposed on the upper surface of the fixed substrate 610 so as to surround the reflection film installation portion 611 and is disposed on the lower surface of the movable substrate 620 so as to face the fixed electrode 651. The fixed electrode 651 is drawn out by the lead wiring 653, and the movable electrode 652 is drawn out by the lead wiring 654. In such an electrostatic actuator 650, the gap G1 can be adjusted using an electrostatic force generated by applying a voltage between the fixed electrode 651 and the movable electrode 652. In this way, by adjusting the gap G1, light having a predetermined target wavelength can be extracted from the inspection target light incident on the wavelength tunable filter 600.

  In the wavelength tunable filter 600 as described above, for example, the fixed electrode 651 and the lead-out wiring 653 can be formed using the exposure apparatus 100 and the exposure method described above. Similarly, the movable electrode 652 and the lead wiring 654 can be formed using the exposure apparatus 100 and the exposure method described above. Note that a specific exposure method is substantially the same procedure as that of the vibration element piece 540 and the vibration element 500 described above, and thus description thereof is omitted.

≪Light emitting element≫
FIG. 8 is a cross-sectional view showing a light emitting device as an example of a product. 9 is a cross-sectional view taken along line BB in FIG.

  A light emitting device 700 shown in FIGS. 8 and 9 is an SLD (super luminescent diode), and includes a substrate 702, a first cladding layer 704, an active layer 706, a second cladding layer 708, and a contact layer 709. In addition, the first electrode 712, the second electrode 714, and the insulating portion 720 are stacked.

  The substrate 702 is, for example, an n-type GaAs substrate. The first cladding layer 704 is, for example, an n-type InGaAlP layer. The second cladding layer 708 is, for example, a p-type InGaAlP layer. The active layer 706 has a multiple quantum well (MQW) structure in which, for example, three quantum well structures each composed of an InGaP well layer and an InGaAlP barrier layer are stacked.

  The active layer 706 includes a first side surface 731 on which the light emitting portion 730 is formed, a second side surface 732 and a third side surface 733 that are inclined with respect to the first side surface 731. The second and third side surfaces 732 and 733 are configured by inner peripheral surfaces of through holes 741 and 742 that penetrate the light emitting element 700, respectively. A part of the active layer 706 forms a gain region group 750 including a first gain region 751, a second gain region 752, and a third gain region 753, and a plurality of gain region groups are provided.

  In the light emitting device 700 having such a configuration, when a forward bias voltage of a pin diode including the first cladding layer 704, the active layer 706, and the second cladding layer 708 is applied between the first electrode 712 and the second electrode 714. Then, gain regions 751, 752, and 753 are generated in the active layer 706, and recombination of electrons and holes occurs in the gain regions 751, 752, and 753, and light emission occurs. With this generated light as the starting point, stimulated emission occurs in a chain, and the light intensity is amplified in the gain regions 751, 752, and 753. Then, the light whose intensity has been amplified is emitted as light L from the light emitting unit 730.

  The contact layer 709 and a part of the second cladding layer 708 form a columnar portion 722. The planar shape of the columnar portion 722 is the same as the planar shape of the gain region group 750. In other words, the current path between the first and second electrodes 712 and 714 is determined by the planar shape of the columnar portion 722, and as a result, the planar shape of the gain region group 750 is determined.

  The first electrode 712 is formed on the entire surface under the substrate 702, and the second electrode 714 is formed on the contact layer 709. The planar shape of the second electrode 714 is the same as the planar shape of the gain region group 750, for example. The first and second electrodes 712 and 714 are, for example, a metal laminate in which a Cr layer, an AuZn layer, and an Au layer are laminated in this order.

  In the light emitting element 700 as described above, for example, the second electrode 714 can be formed using the exposure method described above. Further, for example, the through holes 741 and 742 can be formed using the exposure method described above. Note that a specific exposure method is substantially the same procedure as that of the vibration element piece 540 and the vibration element 500 described above, and a description thereof will be omitted.

≪Inkjet head≫
FIG. 10 is a cross-sectional view showing an inkjet head as an example of a product.

  An inkjet head 800 shown in FIG. 10 includes a laminated substrate 810 in which a nozzle substrate 811, a flow path forming substrate 812, a vibration plate 813, a reservoir forming substrate 814 and a compliance substrate 815 are sequentially stacked, and a plurality of substrates disposed on the vibration plate 813. Piezoelectric element 820, a wiring forming portion 830 provided on the vibration plate 813 so as to cover the piezoelectric element 820, and an IC package 840 disposed on the wiring forming portion 830. In such an inkjet head 800, the piezoelectric element 820 vibrates the vibration plate 813, thereby changing the pressure in the pressure generation chamber 890, and ejecting ink I as droplets from the ejection port 891 formed in the nozzle substrate 811. Is configured to do.

  For example, the wiring forming unit 830 is collectively formed with the reservoir forming substrate 814 by performing wet etching (anisotropic etching) on the silicon substrate. Such a wiring forming portion 830 has a pair of inclined surfaces 831 and 832 and an upper surface 833 that connects the upper ends of the inclined surfaces 831 and 832, and the inclined angle of the inclined surfaces 831 and 832 is about 54 °. ing. In addition, the wiring forming portion 830 has a recess opening on the lower surface, and the piezoelectric element 820 is disposed in a space defined by the recess and the diaphragm 813. Further, a wiring 839 is disposed on the upper surface 833 and the inclined surfaces 831 and 832 of the wiring forming portion 830, and the wiring 839 is electrically connected to the piezoelectric element 820.

  The IC package 840 includes a circuit that can control the driving of each piezoelectric element 820 independently, and is fixed to the upper surface of the wiring forming portion 830 via a conductive fixing member such as solder or gold bumps. 839 is electrically connected.

  In the inkjet head 800 as described above, for example, the wiring 839 can be formed by using the exposure apparatus 100 and the exposure method described above. Note that a specific exposure method is substantially the same procedure as that of the vibration element piece 540 and the vibration element 500 described above, and a description thereof will be omitted.

≪Metal mask≫
FIG. 11 is a cross-sectional view showing a base material having a metal mask as an example of a product. 12 is a cross-sectional view showing a method for manufacturing the metal mask shown in FIG.

  A metal mask 910 shown in FIG. 11 is a mask used when patterning a base material 900 such as a quartz substrate or a silicon substrate by dry etching, for example. Such a metal mask 910 can also be formed using the exposure apparatus 100 and the exposure method described above. Briefly, first, a substrate 900 is prepared, and as shown in FIG. 12A, a seed layer 920 for plating growth is formed on the front and back surfaces of the substrate 900 by sputtering, vapor deposition, or the like. Next, a resist film R is formed on the seed layer 920, and this resist film R is exposed by the above-described exposure method, whereby openings corresponding to the shape of the metal mask 910 are formed as shown in FIG. A resist mask RM having a portion is obtained. Next, a plating layer 930 is formed in the opening of the resist mask RM by electrolytic plating, electroless plating, or the like, and the seed layer 920 that protrudes from the resist mask RM and the plating layer 930 is removed, whereby FIG. As shown in c), a metal mask 910 is obtained.

DESCRIPTION OF SYMBOLS 100 ... Exposure apparatus 110 ... Holding unit 120A ... 1st irradiation part 120B ... 2nd irradiation part 130A, 130B ... Laser light source 140 ... Control part 150A, 150B ... Optical lens system 151 ... Collimator lens 152 …… first zoom lens 153 …… second zoom lens 154 …… first cylindrical lens 155 …… fθ lens 156 …… second cylindrical lens 160A, 160B …… polygon mirror 161 …… reflecting surfaces 170A, 170B …… Mirror 200 ... Substrate to be exposed 20 ... Substrate 201 ... Front side 202 ... Back side 211P, 212P ... Exposure pattern 90 ... Test piece 9 ... Substrate 95, 96 ... Openings 951, 961 ... Edge 500 ... ... Vibrating element 510 ... Base 520, 530 ... Vibrating arm 540 ... Shaking Element pieces 551 and 552... Excitation electrode 553... Weight part 600 .. Tunable filter 610... Fixed substrate 611 .. Reflecting film installation part 620 .. Movable substrate 621 ... Holding part 622. Fixed reflective film 640 …… Moving reflective film 650 …… Electrostatic actuator 651 …… Fixed electrode 652 …… Moving electrode 653 …… Lead wire 654 …… Lead wire 700 …… Light emitting element 702 …… Substrate 704 …… First clad Layer 706 ... Active layer 708 ... Second clad layer 709 ... Contact layer 712 ... First electrode 714 ... Second electrode 720 ... Insulating part 722 ... Columnar part 730 ... Light emitting part 731 ... First 1 side surface 732... 2nd side surface 733... 3rd side surface 741, 742 .. through-hole 750... Gain region group 751. Gain area 753 ... Third gain area 800 ... Inkjet head 810 ... Multilayer substrate 811 ... Nozzle substrate 812 ... Flow path forming substrate 813 ... Vibrating plate 814 ... Reservoir forming substrate 815 ... Compliance substrate 820 ... Piezoelectric element 830 …… Wiring forming portion 831, 832 …… Inclined surface 833 …… Top surface 839 …… Wiring 840 …… IC package 890 …… Pressure generating chamber 891 …… Discharge port 900 …… Substrate 910 …… Metal mask 920 ... Seed layer 930 ... Plating layer G1 ... Gap I ... Ink J ... Axis LL1, LL2 ... Laser light L1, L2 ... Scan line L1 ', L2' ... Exposure line d ... Distance L ... ... light R, R9 ... resist film RM ... resist mask

Claims (4)

Scanning the first exposure light in a first direction included in the first surface of the object to be exposed having the first surface and the second surface facing each other, and irradiating the first exposure light on the first surface; ,
Moving the object to be exposed in a second direction intersecting the first direction;
Scanning the second exposure light along the first direction and irradiating the second exposure light on the second surface,
The start of the step of irradiating the second exposure light is delayed from the start of the step of irradiating the first exposure light,
In the step of irradiating the second exposure light, the second exposure light is irradiated on the front side in the moving direction of the object to be exposed with respect to the first exposure light. In a plan view of the object to be exposed, the distance between the scanning line of the first exposure light and the scanning line of the second exposure light in the second direction is d [μm], and the first exposure light and the first exposure light 2 When the amount of movement of the object to be exposed per scan of exposure light is p [μm / time],
2. The exposure method according to claim 1, wherein after irradiating the first exposure light, the step of irradiating the second exposure light after n = (d / p) [times] scanning is started.   The exposure method according to claim 1, further comprising a step of measuring the distance d [μm]. A moving unit that holds an object to be exposed having a first surface and a second surface that face each other, and moves the object to be exposed in a second direction that intersects the first direction included in the first surface;
A first irradiation unit that scans the first exposure light in the first direction and irradiates the first exposure light on the first surface;
A second irradiation unit that scans the second exposure light along the first direction and irradiates the second exposure light on the second surface;
A control unit that controls the moving unit, the first irradiation unit, and the second irradiation unit;
The control unit controls the first irradiation unit and the second irradiation unit so that the start of irradiation of the second exposure light is delayed from the start of irradiation of the first exposure light,
The first irradiation unit and the second irradiation unit are configured such that the second exposure light is irradiated on the front side in the moving direction of the object to be exposed with respect to the first exposure light. Exposure equipment to do.

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