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JP2011031594A - Tool and manufacturing method thereof - Google Patents

Tool and manufacturing method thereof Download PDF

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JP2011031594A
JP2011031594A JP2009183256A JP2009183256A JP2011031594A JP 2011031594 A JP2011031594 A JP 2011031594A JP 2009183256 A JP2009183256 A JP 2009183256A JP 2009183256 A JP2009183256 A JP 2009183256A JP 2011031594 A JP2011031594 A JP 2011031594A
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polymer film
base material
silicon dioxide
film
substrate
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Kaori Mogi
かおり 茂木
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Ulvac Inc
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Ulvac Inc
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a tool in which a polymer membrane is adhered more tightly on the surface of a base material, and its manufacturing method. <P>SOLUTION: The present method for manufacturing the tool 10, equipped with a base material 11 and a polymer membrane 13 provided on the base material 11 through a silicon dioxide membrane 12, comprises a step A of forming the silicon dioxide membrane 12 on one side 11a of the base material 11 by a physical vapor deposition method; and a step B of forming the polymer membrane 13 on the silicon dioxide membrane 12 by a vapor deposition polymerization method. <P>COPYRIGHT: (C)2011,JPO&amp;INPIT

Description

本発明は、基材の表面に形成される高分子膜によって、基材の表面の凹凸の平坦化、基材への断熱性の付与、基材の表面への保護膜の形成、基材の表面の滑り性の向上などを可能とする治具およびその製造方法に関する。   In the present invention, the polymer film formed on the surface of the base material is used to flatten the unevenness of the surface of the base material, impart heat insulation to the base material, form a protective film on the surface of the base material, The present invention relates to a jig that can improve surface slipperiness and the like, and a method of manufacturing the same.

基材の表面の凹凸の平坦化、基材への断熱性の付与、基材の表面への保護膜の形成、基材の表面の滑り性の向上などを目的として、金属などからなる基材の表面に高分子膜を形成することがある。
従来、このような基材の表面への高分子膜の形成方法としては、湿式法、蒸着重合法などが用いられている。湿式法は、適当な溶媒に原料モノマーを溶解し、溶媒中にて原料モノマーを重合させて、その重合体を含む溶媒を基材の表面に塗布して、基材の表面に高分子膜を形成する方法である。また、蒸着重合法は、原料モノマーを蒸発させ、この気化した原料モノマーを、基材を配置した真空処理室内に導入して、基材の表面にて原料モノマーを重合させて、基材の表面に高分子膜を形成する方法である。
A substrate made of metal or the like for the purpose of flattening irregularities on the surface of the substrate, imparting heat insulation to the substrate, forming a protective film on the surface of the substrate, and improving the slipperiness of the surface of the substrate A polymer film may be formed on the surface of the film.
Conventionally, as a method for forming such a polymer film on the surface of a substrate, a wet method, a vapor deposition polymerization method, or the like is used. In the wet method, a raw material monomer is dissolved in an appropriate solvent, the raw material monomer is polymerized in the solvent, a solvent containing the polymer is applied to the surface of the base material, and a polymer film is formed on the surface of the base material. It is a method of forming. In addition, the vapor deposition polymerization method evaporates the raw material monomer, introduces the vaporized raw material monomer into a vacuum processing chamber in which the base material is disposed, polymerizes the raw material monomer on the surface of the base material, and In this method, a polymer film is formed.

このような湿式法や蒸着重合法による高分子膜は、基材への密着力に劣るため、基材の表面処理を行って、密着力を向上する必要がある。
このような表面処理としては、環状分子と、これを串刺し状に包接する直鎖状分子と、この直鎖状分子の両末端に配置された環状分子の脱離を防止する封鎖基とを有し、直鎖状分子および環状分子の少なくとも一方が疎水性を有する親油性ポリロタキサンからなる常温乾燥型溶剤系上塗り塗料用材料を用いて、基体の表面にベースコート塗膜を形成する方法が挙げられる(例えば、特許文献1参照)。
Since the polymer film by such a wet method or vapor deposition polymerization method is inferior in the adhesive force to a base material, it is necessary to surface-treat a base material and to improve the adhesive force.
Such a surface treatment includes a cyclic molecule, a linear molecule that is included in a skewered manner, and a blocking group that prevents the elimination of the cyclic molecule located at both ends of the linear molecule. And a method of forming a base coat film on the surface of a substrate using a room temperature drying type solvent-based top coating material comprising a lipophilic polyrotaxane in which at least one of a linear molecule and a cyclic molecule is hydrophobic ( For example, see Patent Document 1).

また、プラズマ処理、コロナ放電処理、UV処理および電子線処理から選択された物理的処理が施された基材の表面に、重合性不飽和二重結合を側鎖に有する高分子化合物を接触させ、その後、基材を露光し、その露光により基材表面に発生したラジカルを起点として、重合性不飽和二重結合を側鎖に有する高分子化合物をグラフト重合して、基材に直接結合したグラフトポリマーを生成する基材表面改質方法が開示されている(例えば、特許文献2参照)。   In addition, a polymer compound having a polymerizable unsaturated double bond in a side chain is brought into contact with the surface of a substrate subjected to a physical treatment selected from plasma treatment, corona discharge treatment, UV treatment and electron beam treatment. Then, the substrate was exposed, and the radical compound generated on the surface of the substrate by the exposure was used as a starting point, and a polymer compound having a polymerizable unsaturated double bond in the side chain was graft-polymerized and directly bonded to the substrate. A substrate surface modification method for producing a graft polymer has been disclosed (see, for example, Patent Document 2).

特開2007−099992号公報JP 2007-099992 A 特開2005−359133号公報JP 2005-359133 A

しかしながら、基材の表面にベースコート塗膜を形成する方法では、そのベースコート塗膜を介した高分子膜の基体の表面への密着力が十分ではなかった。
また、プラズマ処理などの物理的処理を用いる方法では、物理処理によって基材の表面の極性を高めているものの、部分的に極性を十分に高めることができないため、高分子膜の基材の表面への密着力が十分ではなかった。
However, in the method of forming the base coat film on the surface of the base material, the adhesion force of the polymer film to the surface of the substrate through the base coat film is not sufficient.
In addition, in the method using physical treatment such as plasma treatment, although the polarity of the surface of the base material is increased by physical treatment, the polarity cannot be sufficiently increased partially. Adhesion to was not enough.

本発明は、上記事情に鑑みてなされたものであって、基材の表面により強固に高分子膜を密着させた治具およびその製造方法を提供することを目的とする。   This invention is made | formed in view of the said situation, Comprising: It aims at providing the jig | tool which closely_contact | adhered the polymer film to the surface of the base material, and its manufacturing method.

本発明の治具は、基材と、該基材上に二酸化ケイ素膜を介して設けられた高分子膜とを備えてなることを特徴とする。   The jig of the present invention comprises a base material and a polymer film provided on the base material via a silicon dioxide film.

前記高分子膜は、ポリ尿素、ポリイミド、ポリウレタンのうちすくなくとも1つからなることが好ましい。   The polymer film is preferably made of at least one of polyurea, polyimide, and polyurethane.

本発明の治具の製造方法は、基材と、該基材上に二酸化ケイ素膜を介して設けられた高分子膜とを備えてなる治具の製造方法であって、基材の一方の面に、物理蒸着法により二酸化ケイ素膜を形成する工程Aと、前記二酸化ケイ素膜上に、蒸着重合法により高分子膜を形成する工程Bとを有することを特徴とする。   A method for manufacturing a jig according to the present invention is a method for manufacturing a jig comprising a base material and a polymer film provided on the base material via a silicon dioxide film. It has a process A in which a silicon dioxide film is formed on the surface by a physical vapor deposition method and a process B in which a polymer film is formed on the silicon dioxide film by a vapor deposition polymerization method.

本発明の治具によれば、基材の一方の面に、二酸化ケイ素膜を介して、高分子膜が設けられているので、高分子膜の基材に対する密着力が強くなる。したがって、二酸化ケイ素膜を介して、基体の一方の面上に、厚みの均一な高分子膜が安定に設けられる。   According to the jig of the present invention, since the polymer film is provided on one surface of the substrate via the silicon dioxide film, the adhesion of the polymer film to the substrate is increased. Therefore, a polymer film having a uniform thickness is stably provided on one surface of the substrate via the silicon dioxide film.

本発明の治具の製造方法によれば、スパッタ法、電子ビーム蒸着法などの物理蒸着法により、基材上に二酸化ケイ素膜を形成し、さらに、二酸化ケイ素膜上に、蒸着重合法により高分子膜を形成するので、原料モノマーの重合による高分子膜の形成と同時に、二酸化ケイ素膜を形成する二酸化ケイ素の酸素と、高分子膜の官能基との化学結合が進行するので、二酸化ケイ素膜に対する密着性がより高い高分子膜を、厚みが均一でかつ安定に形成することができる。   According to the jig manufacturing method of the present invention, a silicon dioxide film is formed on a substrate by a physical vapor deposition method such as a sputtering method or an electron beam vapor deposition method. Since the molecular film is formed, the chemical bond between the oxygen of the silicon dioxide forming the silicon dioxide film and the functional group of the polymer film proceeds simultaneously with the formation of the polymer film by polymerization of the raw material monomer. It is possible to stably form a polymer film having a higher adhesion to the film with a uniform thickness.

本発明の治具の一実施形態を示す概略断面図である。It is a schematic sectional drawing which shows one Embodiment of the jig | tool of this invention. 本発明の治具の製造方法の一実施形態を示す概略斜視図である。It is a schematic perspective view which shows one Embodiment of the manufacturing method of the jig | tool of this invention. 本発明の治具の製造方法の一実施形態を示す概略斜視図である。It is a schematic perspective view which shows one Embodiment of the manufacturing method of the jig | tool of this invention. 本発明の実施例において、高分子膜の密着強度の測定方法を説明する概略断面図である。In the Example of this invention, it is a schematic sectional drawing explaining the measuring method of the adhesive strength of a polymer film. 本発明の比較例において、高分子膜の密着強度の測定方法を説明する概略断面図である。In the comparative example of this invention, it is a schematic sectional drawing explaining the measuring method of the adhesive strength of a polymer film.

本発明の治具およびその製造方法の実施の形態について説明する。
なお、この形態は、発明の趣旨をより良く理解させるために具体的に説明するものであり、特に指定のない限り、本発明を限定するものではない。
An embodiment of a jig and a manufacturing method thereof according to the present invention will be described.
This embodiment is specifically described for better understanding of the gist of the invention, and does not limit the present invention unless otherwise specified.

「治具」
図1は、本発明の治具の一実施形態を示す概略断面図である。
この実施形態の治具10は、基材11と、基材11の一方の面11aに設けられた二酸化ケイ素(SiO)膜12と、二酸化ケイ素膜12の基材11と接している面とは反対側の面(以下、「一方の面」という。)12aに設けられた高分子膜13とから概略構成されている。
すなわち、高分子膜13は、二酸化ケイ素膜12を介して、基材11の一方の面11aに設けられている。
"jig"
FIG. 1 is a schematic sectional view showing an embodiment of the jig of the present invention.
The jig 10 of this embodiment includes a base material 11, a silicon dioxide (SiO 2 ) film 12 provided on one surface 11 a of the base material 11, and a surface in contact with the base material 11 of the silicon dioxide film 12. Is composed of a polymer film 13 provided on the opposite surface (hereinafter referred to as “one surface”) 12a.
That is, the polymer film 13 is provided on one surface 11 a of the substrate 11 with the silicon dioxide film 12 interposed therebetween.

基材11としては、ガラス基材、アルミニウム基材、ステンレス基材などが用いられる。
基材11の厚みは、特に限定されず、治具10の用途などに応じて適宜調整される。
As the base material 11, a glass base material, an aluminum base material, a stainless steel base material, or the like is used.
The thickness of the base material 11 is not specifically limited, It adjusts suitably according to the use of the jig | tool 10, etc.

二酸化ケイ素(SiO)膜12は、基材11と高分子膜13との密着性を向上するために、スパッタリング法、電子ビーム蒸着法などの物理蒸着法により形成された膜である。
二酸化ケイ素膜12の厚みは、基材11と高分子膜13との密着性を確保する観点から、100nm〜5μm程度が好ましい。
The silicon dioxide (SiO 2 ) film 12 is a film formed by physical vapor deposition such as sputtering or electron beam vapor deposition in order to improve the adhesion between the substrate 11 and the polymer film 13.
The thickness of the silicon dioxide film 12 is preferably about 100 nm to 5 μm from the viewpoint of ensuring the adhesion between the substrate 11 and the polymer film 13.

高分子膜13は、ポリ尿素、ポリイミド、ポリウレタンのうちすくなくとも1つから構成されている。
高分子膜13の厚みは、特に限定されず、治具10の用途などに応じて適宜調整される。
The polymer film 13 is composed of at least one of polyurea, polyimide, and polyurethane.
The thickness of the polymer film 13 is not particularly limited, and is appropriately adjusted according to the use of the jig 10 or the like.

この治具20によれば、基材11の一方の面11aに、二酸化ケイ素膜12を介して、高分子膜13が設けられているので、高分子膜13の基材11に対する密着力が強くなる。したがって、二酸化ケイ素膜12を介して、基体11の一方の面11a上に、厚みの均一な高分子膜13が安定に設けられている。   According to this jig 20, since the polymer film 13 is provided on the one surface 11a of the base material 11 with the silicon dioxide film 12 interposed therebetween, the adhesion force of the polymer film 13 to the base material 11 is strong. Become. Therefore, the polymer film 13 having a uniform thickness is stably provided on the one surface 11 a of the base 11 via the silicon dioxide film 12.

次に、図1〜図3を参照して、治具10の製造方法を説明する。
まず、図2に示すように、スパッタリング法、電子ビーム蒸着法などの物理蒸着法により、基材11の一方の面11aに所定の厚みの二酸化ケイ素膜12を形成する(工程A)。
Next, with reference to FIGS. 1-3, the manufacturing method of the jig | tool 10 is demonstrated.
First, as shown in FIG. 2, a silicon dioxide film 12 having a predetermined thickness is formed on one surface 11a of the substrate 11 by a physical vapor deposition method such as a sputtering method or an electron beam vapor deposition method (step A).

スパッタリング法を用いた二酸化ケイ素膜12の形成方法は、真空中でアルゴン(Ar)不活性ガスを導入し、二酸化ケイ素(SiO)ターゲットにマイナスの電圧を印加してグロー放電を発生させ、アルゴン(Ar)不活性ガスをイオン化し、高速でターゲットの表面にガスイオンを衝突させて激しく叩き、二酸化ケイ素(SiO)の原子や分子を激しく弾き出し、勢いよく基材の表面に付着させて薄膜を形成する方法である。
また、電子ビーム蒸着法を用いた二酸化ケイ素膜12の形成方法は、真空中で高エネルギーの電子ビームを材料である二酸化ケイ素(SiO)に当てて、二酸化ケイ素(SiO)を加熱し蒸気流を生成し、蒸発した二酸化ケイ素(SiO)を基板上に凝縮させて付着させ、薄膜を形成する方法である。
The silicon dioxide film 12 is formed by sputtering using an argon (Ar) inert gas in a vacuum and applying a negative voltage to the silicon dioxide (SiO 2 ) target to generate a glow discharge. (Ar) An inert gas is ionized, gas ions collide with the surface of the target at high speed, and are struck violently, atoms and molecules of silicon dioxide (SiO 2 ) are ejected violently, and vigorously adhere to the surface of the base material. It is a method of forming.
In addition, a method of forming the silicon dioxide film 12 using the electron beam evaporation method is a method in which a high-energy electron beam is applied to silicon dioxide (SiO 2 ) as a material in a vacuum to heat the silicon dioxide (SiO 2 ) and vaporize it. In this method, a flow is generated, and evaporated silicon dioxide (SiO 2 ) is condensed and deposited on a substrate to form a thin film.

次いで、二酸化ケイ素膜12が設けられた基材11を、真空処理室内に配置し、この真空処理室内に、蒸発させた原料モノマーを導入し、この原料モノマーを二酸化ケイ素膜12上で重合させて高分子膜13を形成するとともに、二酸化ケイ素膜12を形成する二酸化ケイ素の酸素と、高分子膜13の官能基との化学結合が進行することによって、図3に示すように、二酸化ケイ素膜12と高分子膜13を密着させて(工程B)、治具10を得る。   Next, the base material 11 provided with the silicon dioxide film 12 is placed in a vacuum processing chamber, the evaporated raw material monomer is introduced into the vacuum processing chamber, and the raw material monomer is polymerized on the silicon dioxide film 12. As shown in FIG. 3, the silicon dioxide film 12 is formed by a chemical bond between the oxygen of silicon dioxide forming the silicon dioxide film 12 and the functional group of the polymer film 13 while the polymer film 13 is formed. And the polymer film 13 are adhered (Step B) to obtain the jig 10.

真空処理室内に、蒸発させた原料モノマーを導入し、二酸化ケイ素膜12上で重合させて高分子膜13を形成する蒸着重合法では、目的とする高分子膜13の種類に応じて、原料モノマーが用いられる。
ポリ尿素からなる高分子膜13を形成する場合、原料モノマーとしては、アミンモノマーとイソシアネートモノマーが用いられる。
ポリイミドからなる高分子膜13を形成する場合、原料モノマーとしては、無水ピロメリト酸とビス(4−アミノフェニル)エーテルが用いられる。
ポリウレタンからなる高分子膜13を形成する場合、原料モノマーとしては、1,3−ビス(イソシアナトメチル)シクロヘキサンとトリエチレングリコールが用いられる。
In the vapor deposition polymerization method in which the evaporated raw material monomer is introduced into the vacuum processing chamber and polymerized on the silicon dioxide film 12 to form the polymer film 13, the raw material monomer is selected according to the type of the target polymer film 13. Is used.
When forming the polymer film 13 made of polyurea, an amine monomer and an isocyanate monomer are used as raw material monomers.
When the polymer film 13 made of polyimide is formed, pyromellitic anhydride and bis (4-aminophenyl) ether are used as raw material monomers.
When forming the polymer film 13 made of polyurethane, 1,3-bis (isocyanatomethyl) cyclohexane and triethylene glycol are used as raw material monomers.

蒸着重合法では、真空処理室内の温度を10℃〜210℃、真空処理室内の圧力を0.01Pa〜1Pa、原料モノマーの温度を20℃〜210℃、成膜時間を1分〜24時間とする。   In the vapor deposition polymerization method, the temperature in the vacuum processing chamber is 10 ° C. to 210 ° C., the pressure in the vacuum processing chamber is 0.01 Pa to 1 Pa, the temperature of the raw material monomer is 20 ° C. to 210 ° C., and the film formation time is 1 minute to 24 hours. To do.

この治具10の製造方法によれば、スパッタリング法、電子ビーム蒸着法などの物理蒸着法により、基材11上に二酸化ケイ素膜12を形成し、さらに、二酸化ケイ素膜12上に、蒸着重合法により高分子膜13を形成するので、原料モノマーの重合による高分子膜13の形成と同時に、二酸化ケイ素膜12を形成する二酸化ケイ素の酸素と、高分子膜13の官能基との化学結合が進行するので、二酸化ケイ素膜12に対する密着性がより高い高分子膜13を、厚みが均一でかつ安定に形成することができる。   According to the method for manufacturing the jig 10, the silicon dioxide film 12 is formed on the substrate 11 by physical vapor deposition such as sputtering or electron beam vapor deposition, and further, vapor deposition polymerization is performed on the silicon dioxide film 12. Since the polymer film 13 is formed by the above, the chemical bond between the oxygen of the silicon dioxide forming the silicon dioxide film 12 and the functional group of the polymer film 13 proceeds simultaneously with the formation of the polymer film 13 by polymerization of the raw material monomers. Therefore, the polymer film 13 having higher adhesion to the silicon dioxide film 12 can be formed stably with a uniform thickness.

以下、実施例および比較例により本発明をさらに具体的に説明するが、本発明は以下の実施例に限定されるものではない。   EXAMPLES Hereinafter, although an Example and a comparative example demonstrate this invention further more concretely, this invention is not limited to a following example.

「実施例1」
基材11として、ガラス基材を用いた。
スパッタリング法により、基材11の一方の面11aに二酸化ケイ素膜12を形成した。
次いで、二酸化ケイ素膜12が設けられた基材11を、真空処理室内に配置し、この真空処理室内に、蒸発させた4,4´−ジアミノジシクロヘキシルメタンと1,3−ビス(イソシアナトメチル)シクロヘキサン)を導入し、これらのモノマーを自己組織化単分子膜12上で重合させて、ポリ尿素かなる高分子膜13を形成し、治具10を得た。
蒸着重合法において、真空処理室内の温度を30℃、真空処理室内の圧力を0.3Pa、4,4´−ジアミノジシクロヘキシルメタンの温度を80℃、1,3−ビス(イソシアナトメチル)シクロヘキサン)の温度を70℃、成膜時間を15分とした。
"Example 1"
A glass substrate was used as the substrate 11.
A silicon dioxide film 12 was formed on one surface 11a of the substrate 11 by sputtering.
Next, the base material 11 provided with the silicon dioxide film 12 is placed in a vacuum processing chamber, and evaporated 4,4′-diaminodicyclohexylmethane and 1,3-bis (isocyanatomethyl) in the vacuum processing chamber. Cyclohexane) was introduced, and these monomers were polymerized on the self-assembled monomolecular film 12 to form a polymer film 13 made of polyurea, whereby the jig 10 was obtained.
In the vapor deposition polymerization method, the temperature in the vacuum processing chamber is 30 ° C., the pressure in the vacuum processing chamber is 0.3 Pa, the temperature of 4,4′-diaminodicyclohexylmethane is 80 ° C., 1,3-bis (isocyanatomethyl) cyclohexane) The temperature was 70 ° C. and the film formation time was 15 minutes.

得られた治具10について、高分子膜13の密着力(密着強度)を測定した。
高分子膜13の密着強度を、Quad Group社製のRomulus IV 薄膜強度試験により測定した。
詳細には、まず、治具10の高分子膜13の表面に、直径2.7mmのエポキシ接着剤付きアルミニウム製のスタッドピン(商品名:901106、フォトテクニカ製)21を、クリップで挟んで保持した。
次いで、この状態で、治具10とスタッドピン21を150℃にて1時間加熱することにより、スタッドピン21の高分子膜13と接している面に設けられている樹脂22を溶融させて、高分子膜13の表面にスタッドピン21を固定した。
次いで、クリップを外して、スタッドピン21が固定された治具10を、薄膜強度試験に設置し、スタッドピン21を高分子膜13の表面に対して垂直方向(図4に示す矢印の方向)に引っ張って、高分子膜13が剥離した時の強度を測定した。
結果を表1に示す。
With respect to the obtained jig 10, the adhesion (adhesion strength) of the polymer film 13 was measured.
The adhesion strength of the polymer film 13 was measured by a Romulus IV thin film strength test manufactured by Quad Group.
Specifically, first, an aluminum stud pin (trade name: 901106, made by Phototechnica) 21 having an epoxy adhesive with a diameter of 2.7 mm is sandwiched and held on the surface of the polymer film 13 of the jig 10. did.
Next, in this state, the jig 10 and the stud pin 21 are heated at 150 ° C. for 1 hour to melt the resin 22 provided on the surface of the stud pin 21 in contact with the polymer film 13. A stud pin 21 was fixed on the surface of the polymer film 13.
Next, the clip is removed, and the jig 10 to which the stud pin 21 is fixed is installed in the thin film strength test, and the stud pin 21 is perpendicular to the surface of the polymer film 13 (the direction of the arrow shown in FIG. 4). The strength when the polymer film 13 was peeled was measured.
The results are shown in Table 1.

「実施例2」
基材11として、アルミニウム基材を用いた以外は実施例1と同様にして、治具10を作製した。
実施例1と同様にして、得られた治具10について、高分子膜13の密着力(密着強度)を測定した。
結果を表1に示す。
"Example 2"
A jig 10 was produced in the same manner as in Example 1 except that an aluminum substrate was used as the substrate 11.
In the same manner as in Example 1, the adhesion strength (adhesion strength) of the polymer film 13 was measured for the obtained jig 10.
The results are shown in Table 1.

「実施例3」
基材11として、ステンレス基材を用いた以外は実施例1と同様にして、治具10を作製した。
実施例1と同様にして、得られた治具10について、高分子膜13の密着力(密着強度)を測定した。
結果を表1に示す。
"Example 3"
A jig 10 was produced in the same manner as in Example 1 except that a stainless steel substrate was used as the substrate 11.
In the same manner as in Example 1, the adhesion strength (adhesion strength) of the polymer film 13 was measured for the obtained jig 10.
The results are shown in Table 1.

「比較例1」
基材11として、ガラス基材を用いて、実施例1と同様にして、蒸着重合法により、基材11の一方の面11aにポリ尿素かなる高分子膜13を形成し、図5に示す試料30を得た。
実施例1と同様にして、得られた試料30について、高分子膜13の密着力(密着強度)を測定した。
結果を表1に示す。
“Comparative Example 1”
As a base material 11, using a glass base material, a polymer film 13 made of polyurea is formed on one surface 11a of the base material 11 by a vapor deposition polymerization method in the same manner as in Example 1 and shown in FIG. Sample 30 was obtained.
In the same manner as in Example 1, the obtained sample 30 was measured for the adhesion (adhesion strength) of the polymer film 13.
The results are shown in Table 1.

「比較例2」
基材11として、アルミニウム基材を用いて、実施例1と同様にして、蒸着重合法により、基材11の一方の面11aにポリ尿素かなる高分子膜13を形成し、図5に示す試料30を得た。
実施例1と同様にして、得られた試料30について、高分子膜13の密着力(密着強度)を測定した。
結果を表1に示す。
"Comparative Example 2"
A polymer film 13 made of polyurea is formed on one surface 11a of the base material 11 by vapor deposition polymerization in the same manner as in Example 1 using an aluminum base material as the base material 11, and is shown in FIG. Sample 30 was obtained.
In the same manner as in Example 1, the obtained sample 30 was measured for the adhesion (adhesion strength) of the polymer film 13.
The results are shown in Table 1.

「比較例3」
基材11として、ステンレス基材を用いて、実施例1と同様にして、蒸着重合法により、基材11の一方の面11aにポリ尿素かなる高分子膜13を形成し、図5に示す試料30を得た。
実施例1と同様にして、得られた試料30について、高分子膜13の密着力(密着強度)を測定した。
結果を表1に示す。
“Comparative Example 3”
As a base material 11, using a stainless steel base material, a polymer film 13 made of polyurea is formed on one surface 11a of the base material 11 by vapor deposition polymerization in the same manner as in Example 1 and shown in FIG. Sample 30 was obtained.
In the same manner as in Example 1, the obtained sample 30 was measured for the adhesion (adhesion strength) of the polymer film 13.
The results are shown in Table 1.

Figure 2011031594
Figure 2011031594

表1の結果から、実施例1と比較例1を比較すると、二酸化ケイ素膜12を介して、ガラス基材からなる基材11上に高分子膜13を設けた実施例1は、ガラス基材からなる基材11上に直接、高分子膜13を設けた比較例1よりも密着強度が大きいことが確認された。
同様に、実施例2と比較例2を比較すると、二酸化ケイ素膜12を介して、アルミニウム基材からなる基材11上に高分子膜13を設けた実施例1は、アルミニウム基材からなる基材11上に直接、高分子膜13を設けた比較例1よりも密着強度が大きいことが確認された。
また、実施例3と比較例3を比較すると、二酸化ケイ素膜12を介して、ステンレス基材からなる基材11上に高分子膜13を設けた実施例1は、ステンレス基材からなる基材11上に直接、高分子膜13を設けた比較例1よりも密着強度が大きいことが確認された。
以上の結果から、二酸化ケイ素膜12を介して、基材11上に高分子膜13を設けることにより、基材11に対する高分子膜13の密着力が向上することが分かった。
From the results in Table 1, when Example 1 and Comparative Example 1 are compared, Example 1 in which a polymer film 13 is provided on a substrate 11 made of a glass substrate via a silicon dioxide film 12 It was confirmed that the adhesion strength was higher than that of Comparative Example 1 in which the polymer film 13 was provided directly on the substrate 11 made of
Similarly, when Example 2 and Comparative Example 2 are compared, Example 1 in which the polymer film 13 is provided on the base material 11 made of an aluminum base material via the silicon dioxide film 12 is similar to the base material made of an aluminum base material. It was confirmed that the adhesion strength was higher than that of Comparative Example 1 in which the polymer film 13 was provided directly on the material 11.
Further, when Example 3 and Comparative Example 3 are compared, Example 1 in which a polymer film 13 is provided on a base material 11 made of a stainless steel base material via a silicon dioxide film 12 is a base material made of a stainless steel base material. It was confirmed that the adhesion strength was higher than that of Comparative Example 1 in which the polymer film 13 was provided directly on the substrate 11.
From the above results, it was found that the adhesion of the polymer film 13 to the substrate 11 is improved by providing the polymer film 13 on the substrate 11 via the silicon dioxide film 12.

本発明の治具は、基材に対する高分子膜の密着性に優れるとともに、基材上に形成された高分子膜は厚みが均一でかつ平滑性に優れるので、プラスチック成形用の金型として好適に用いられる。   The jig of the present invention is excellent in the adhesion of the polymer film to the base material, and the polymer film formed on the base material is uniform in thickness and excellent in smoothness. Therefore, it is suitable as a mold for plastic molding. Used for.

10・・・治具、11・・・基材、12・・・二酸化ケイ素膜、13・・・高分子膜。 DESCRIPTION OF SYMBOLS 10 ... Jig, 11 ... Base material, 12 ... Silicon dioxide film, 13 ... Polymer film.

Claims (3)

基材と、該基材上に二酸化ケイ素膜を介して設けられた高分子膜とを備えてなることを特徴とする治具。   A jig comprising a substrate and a polymer film provided on the substrate via a silicon dioxide film. 前記高分子膜は、ポリ尿素、ポリイミド、ポリウレタンのうちすくなくとも1つからなることを特徴とする請求項1に記載の治具。   The jig according to claim 1, wherein the polymer film is made of at least one of polyurea, polyimide, and polyurethane. 基材と、該基材上に二酸化ケイ素膜を介して設けられた高分子膜とを備えてなる治具の製造方法であって、
基材の一方の面に、物理蒸着法により二酸化ケイ素膜を形成する工程Aと、前記二酸化ケイ素膜上に、蒸着重合法により高分子膜を形成する工程Bとを有することを特徴とする治具の製造方法。
A manufacturing method of a jig comprising a base material and a polymer film provided on the base material via a silicon dioxide film,
A process comprising a step A of forming a silicon dioxide film on one surface of a substrate by physical vapor deposition and a step B of forming a polymer film on the silicon dioxide film by vapor deposition polymerization. Manufacturing method of the tool.
JP2009183256A 2009-08-06 2009-08-06 Tool and manufacturing method thereof Pending JP2011031594A (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0422623A (en) * 1990-05-18 1992-01-27 Fujitsu Ltd Ceramic substrate
JPH09143681A (en) * 1995-11-14 1997-06-03 Ulvac Japan Ltd Formation of high molecular thin film
JPH10289903A (en) * 1997-04-11 1998-10-27 Ulvac Japan Ltd Low relative dielectric constant insulation film, formation thereof and inter-layer insulation film
JP2004279687A (en) * 2003-03-14 2004-10-07 Tetsuzo Yoshimura Optoelectronic microsystem, waveguide device, variable well optical IC, optoelectronic micro / nano system,
JP2005258376A (en) * 2004-03-13 2005-09-22 Tetsuzo Yoshimura Micro and nano-device system, self-organizing optical network, and molecular nano-duplicating method
JP2006141285A (en) * 2004-11-19 2006-06-08 Ulvac Japan Ltd Lures and manufacturing methods thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0422623A (en) * 1990-05-18 1992-01-27 Fujitsu Ltd Ceramic substrate
JPH09143681A (en) * 1995-11-14 1997-06-03 Ulvac Japan Ltd Formation of high molecular thin film
JPH10289903A (en) * 1997-04-11 1998-10-27 Ulvac Japan Ltd Low relative dielectric constant insulation film, formation thereof and inter-layer insulation film
JP2004279687A (en) * 2003-03-14 2004-10-07 Tetsuzo Yoshimura Optoelectronic microsystem, waveguide device, variable well optical IC, optoelectronic micro / nano system,
JP2005258376A (en) * 2004-03-13 2005-09-22 Tetsuzo Yoshimura Micro and nano-device system, self-organizing optical network, and molecular nano-duplicating method
JP2006141285A (en) * 2004-11-19 2006-06-08 Ulvac Japan Ltd Lures and manufacturing methods thereof

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