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JP2009004770A - 多結晶シリコン層の製造方法、これを用いて形成した薄膜トランジスタ、その製造方法、並びに、これを備えた有機電界発光表示装置 - Google Patents

多結晶シリコン層の製造方法、これを用いて形成した薄膜トランジスタ、その製造方法、並びに、これを備えた有機電界発光表示装置 Download PDF

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Publication number
JP2009004770A
JP2009004770A JP2008138586A JP2008138586A JP2009004770A JP 2009004770 A JP2009004770 A JP 2009004770A JP 2008138586 A JP2008138586 A JP 2008138586A JP 2008138586 A JP2008138586 A JP 2008138586A JP 2009004770 A JP2009004770 A JP 2009004770A
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Japan
Prior art keywords
silicon layer
layer
thermal oxide
metal catalyst
oxide film
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Pending
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JP2008138586A
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English (en)
Japanese (ja)
Inventor
Tae-Hoon Yang
泰勳 梁
Ki-Yong Lee
基龍 李
Jin-Wook Seo
晉旭 徐
Byoung-Keon Park
炳建 朴
Kil-Won Lee
吉遠 李
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Samsung SDI Co Ltd
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Samsung SDI Co Ltd
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Publication of JP2009004770A publication Critical patent/JP2009004770A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6744—Monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0225—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using crystallisation-promoting species, e.g. using a Ni catalyst
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10P14/3238—
    • H10P14/3411—
    • H10P14/3806—
    • H10P14/3822—

Landscapes

  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
JP2008138586A 2007-06-19 2008-05-27 多結晶シリコン層の製造方法、これを用いて形成した薄膜トランジスタ、その製造方法、並びに、これを備えた有機電界発光表示装置 Pending JP2009004770A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070059968A KR20080111693A (ko) 2007-06-19 2007-06-19 다결정 실리콘층의 제조 방법, 이를 이용하여 형성된박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치

Publications (1)

Publication Number Publication Date
JP2009004770A true JP2009004770A (ja) 2009-01-08

Family

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Family Applications (1)

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JP2008138586A Pending JP2009004770A (ja) 2007-06-19 2008-05-27 多結晶シリコン層の製造方法、これを用いて形成した薄膜トランジスタ、その製造方法、並びに、これを備えた有機電界発光表示装置

Country Status (6)

Country Link
US (2) US7825476B2 (zh)
EP (1) EP2006903A3 (zh)
JP (1) JP2009004770A (zh)
KR (1) KR20080111693A (zh)
CN (1) CN101330004A (zh)
TW (1) TWI382471B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101011806B1 (ko) 2009-04-30 2011-02-07 노코드 주식회사 다결정 실리콘 박막의 제조방법

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080111693A (ko) * 2007-06-19 2008-12-24 삼성모바일디스플레이주식회사 다결정 실리콘층의 제조 방법, 이를 이용하여 형성된박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
KR100965260B1 (ko) * 2008-01-25 2010-06-22 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법 및 이를 구비한유기전계발광표시장치
KR101408962B1 (ko) * 2008-07-01 2014-06-17 삼성디스플레이 주식회사 트랜지스터의 제조방법 및 이를 이용한 유기전계발광표시장치의 제조방법
KR100965259B1 (ko) * 2008-12-18 2010-06-22 삼성모바일디스플레이주식회사 유기전계발광표시장치 및 그의 제조방법
KR101088457B1 (ko) * 2009-04-07 2011-12-01 주식회사 테라세미콘 금속 촉매를 이용한 폴리 실리콘 마스크의 제조방법 및 이를 이용한 반도체 소자의 제조방법
KR101147414B1 (ko) * 2009-09-22 2012-05-22 삼성모바일디스플레이주식회사 유기 발광 표시 장치 및 그 제조 방법
CN103151266B (zh) * 2009-11-20 2016-08-03 株式会社半导体能源研究所 用于制造半导体器件的方法
CN101807545B (zh) * 2010-03-22 2013-04-24 中国科学院上海微系统与信息技术研究所 二极管及电阻转换存储器的制造方法
CN102254797A (zh) * 2010-05-18 2011-11-23 京东方科技集团股份有限公司 低温多晶硅薄膜及其制造方法、晶体管和显示装置
CN102906882B (zh) * 2010-05-21 2015-11-25 株式会社半导体能源研究所 半导体装置及其制造方法
KR101733196B1 (ko) 2010-09-03 2017-05-25 삼성디스플레이 주식회사 박막 트랜지스터, 이의 제조 방법, 및 이를 구비한 표시 장치
KR101809661B1 (ko) * 2011-06-03 2017-12-18 삼성디스플레이 주식회사 박막 트랜지스터, 그 제조 방법 및 이를 포함하는 유기 발광 표시 장치
KR101860859B1 (ko) * 2011-06-13 2018-05-25 삼성디스플레이 주식회사 박막트랜지스터의 제조 방법, 상기 방법에 의해 제조된 박막트랜지스터, 유기발광표시장치의 제조방법, 및 상기 방법에 의해 제조된 유기발광표시장치
KR20130007283A (ko) * 2011-06-30 2013-01-18 삼성디스플레이 주식회사 박막 트랜지스터, 이를 구비한 표시 장치, 및 그 제조 방법
KR101244298B1 (ko) * 2011-07-13 2013-03-18 광주과학기술원 열처리를 이용하는 발광 다이오드의 제조방법 및 이를 이용하여 형성된 발광 다이오드
KR102504604B1 (ko) 2011-09-29 2023-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6082562B2 (ja) * 2011-10-27 2017-02-15 株式会社半導体エネルギー研究所 半導体装置
EP2613346B1 (en) * 2011-11-11 2022-06-08 BOE Technology Group Co., Ltd. Thin film transistor, manufacturing method thereof and display device
US9087694B2 (en) * 2012-06-03 2015-07-21 Silicon Solar Solutions, Llc Ultra-large grain polycrystalline semiconductors through top-down aluminum induced crystallization (TAIC)
US9123673B2 (en) * 2013-03-12 2015-09-01 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer back side processing structure and apparatus
CN103311105A (zh) * 2013-05-16 2013-09-18 上海大学 铝在低温下诱导非晶硅薄膜晶化为多晶硅薄膜的方法
US9166181B2 (en) 2014-02-19 2015-10-20 International Business Machines Corporation Hybrid junction field-effect transistor and active matrix structure
CN104538350A (zh) * 2014-12-30 2015-04-22 深圳市华星光电技术有限公司 多晶硅基板及其制造方法
CN104465371A (zh) * 2014-12-31 2015-03-25 深圳市华星光电技术有限公司 准分子激光退火前处理方法、薄膜晶体管及其生产方法
KR20170001827A (ko) * 2015-06-25 2017-01-05 삼성디스플레이 주식회사 유기 발광 표시 장치
CN105140180B (zh) * 2015-08-24 2018-03-13 武汉华星光电技术有限公司 薄膜晶体管阵列基板的制作方法及多晶硅材料的制作方法
CN105470312A (zh) 2016-02-19 2016-04-06 深圳市华星光电技术有限公司 低温多晶硅薄膜晶体管及其制造方法
JP6975147B2 (ja) * 2017-06-01 2021-12-01 京東方科技集團股▲ふん▼有限公司Boe Technology Group Co., Ltd. アレイ基板、それを有する表示パネル、並びにアレイ基板の製造方法
KR102596210B1 (ko) * 2018-05-25 2023-10-30 엘지디스플레이 주식회사 Tft 기판 및 이를 포함한 표시장치
KR102639769B1 (ko) * 2018-11-22 2024-02-26 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
US11842937B2 (en) * 2021-07-30 2023-12-12 Wolfspeed, Inc. Encapsulation stack for improved humidity performance and related fabrication methods

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0794756A (ja) * 1993-07-27 1995-04-07 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JPH07130652A (ja) * 1993-10-29 1995-05-19 Semiconductor Energy Lab Co Ltd 半導体作製方法
JPH07226374A (ja) * 1994-02-10 1995-08-22 Semiconductor Energy Lab Co Ltd 半導体作製方法
JPH11231798A (ja) * 1997-12-08 1999-08-27 Semiconductor Energy Lab Co Ltd 信号分割回路及び半導体装置
JPH11312812A (ja) * 1999-03-15 1999-11-09 Sony Corp 薄膜トランジスタの製法
JPH11354441A (ja) * 1998-06-08 1999-12-24 Seiko Epson Corp 半導体装置の製造方法
JP2002368010A (ja) * 2001-06-05 2002-12-20 Matsushita Electric Ind Co Ltd 薄膜トランジスタの製造方法
JP2003068645A (ja) * 2001-08-30 2003-03-07 Semiconductor Energy Lab Co Ltd 結晶質半導体膜及びその作製方法並びに半導体装置
JP2003197618A (ja) * 2001-12-25 2003-07-11 Sanyo Electric Co Ltd 薄膜形成方法
JP2006054415A (ja) * 2004-08-13 2006-02-23 Samsung Sdi Co Ltd 薄膜トランジスタ及びその製造方法
JP2007142367A (ja) * 2005-11-16 2007-06-07 Samsung Sdi Co Ltd 薄膜トランジスタ及びその製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW264575B (zh) 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
US6162667A (en) 1994-03-28 2000-12-19 Sharp Kabushiki Kaisha Method for fabricating thin film transistors
JP3621151B2 (ja) * 1994-06-02 2005-02-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6326248B1 (en) * 1994-06-02 2001-12-04 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor device
US5840600A (en) * 1994-08-31 1998-11-24 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device and apparatus for treating semiconductor device
US6465287B1 (en) * 1996-01-27 2002-10-15 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization
JPH10228248A (ja) * 1996-12-09 1998-08-25 Semiconductor Energy Lab Co Ltd アクティブマトリクス表示装置およびその作製方法
US6346437B1 (en) * 1998-07-16 2002-02-12 Sharp Laboratories Of America, Inc. Single crystal TFT from continuous transition metal delivery method
KR100478757B1 (ko) 2002-04-17 2005-03-24 엘지.필립스 엘시디 주식회사 실리콘 결정화방법
KR100470274B1 (ko) 2002-11-08 2005-02-05 진 장 덮개층을 이용한 비정질 물질의 상 변화 방법
KR100618614B1 (ko) 2003-09-02 2006-09-08 진 장 플렉서블 금속 기판 상의 실리콘 박막 형성 방법
KR100666564B1 (ko) * 2004-08-04 2007-01-09 삼성에스디아이 주식회사 박막트랜지스터의 제조 방법
KR100721555B1 (ko) 2004-08-13 2007-05-23 삼성에스디아이 주식회사 박막트랜지스터 및 그 제조 방법
KR100611766B1 (ko) * 2004-08-24 2006-08-10 삼성에스디아이 주식회사 박막트랜지스터 제조 방법
KR100752378B1 (ko) 2005-10-14 2007-08-27 삼성에스디아이 주식회사 유기 전계 발광 장치 및 그 제조 방법
KR100708720B1 (ko) * 2005-10-19 2007-04-17 삼성에스디아이 주식회사 유기 박막 트랜지스터, 이의 제조 방법 및 이를 구비한평판 표시 장치
KR20080111693A (ko) * 2007-06-19 2008-12-24 삼성모바일디스플레이주식회사 다결정 실리콘층의 제조 방법, 이를 이용하여 형성된박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
KR200440762Y1 (ko) 2007-07-23 2008-07-01 주식회사 성안세이브 안전모용 머리고정 조절기

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0794756A (ja) * 1993-07-27 1995-04-07 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JPH07130652A (ja) * 1993-10-29 1995-05-19 Semiconductor Energy Lab Co Ltd 半導体作製方法
JPH07226374A (ja) * 1994-02-10 1995-08-22 Semiconductor Energy Lab Co Ltd 半導体作製方法
JPH11231798A (ja) * 1997-12-08 1999-08-27 Semiconductor Energy Lab Co Ltd 信号分割回路及び半導体装置
JPH11354441A (ja) * 1998-06-08 1999-12-24 Seiko Epson Corp 半導体装置の製造方法
JPH11312812A (ja) * 1999-03-15 1999-11-09 Sony Corp 薄膜トランジスタの製法
JP2002368010A (ja) * 2001-06-05 2002-12-20 Matsushita Electric Ind Co Ltd 薄膜トランジスタの製造方法
JP2003068645A (ja) * 2001-08-30 2003-03-07 Semiconductor Energy Lab Co Ltd 結晶質半導体膜及びその作製方法並びに半導体装置
JP2003197618A (ja) * 2001-12-25 2003-07-11 Sanyo Electric Co Ltd 薄膜形成方法
JP2006054415A (ja) * 2004-08-13 2006-02-23 Samsung Sdi Co Ltd 薄膜トランジスタ及びその製造方法
JP2007142367A (ja) * 2005-11-16 2007-06-07 Samsung Sdi Co Ltd 薄膜トランジスタ及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101011806B1 (ko) 2009-04-30 2011-02-07 노코드 주식회사 다결정 실리콘 박막의 제조방법

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US8445336B2 (en) 2013-05-21
EP2006903A2 (en) 2008-12-24
TWI382471B (zh) 2013-01-11
EP2006903A3 (en) 2008-12-31
US20110014755A1 (en) 2011-01-20
KR20080111693A (ko) 2008-12-24
TW200903651A (en) 2009-01-16
US7825476B2 (en) 2010-11-02
US20080315207A1 (en) 2008-12-25
CN101330004A (zh) 2008-12-24

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