JP2008181038A - Exposure mask, pattern formation method, semiconductor device manufacturing method, and display device manufacturing method - Google Patents

Abstract

An exposure mask capable of forming a fine pattern by performing pattern exposure with a specific wavelength cut without modifying the exposure apparatus.
An exposure mask 1 having a light shielding layer 5 in which an opening pattern 5a is formed is provided with a filter layer 9 that transmits only light of a specific wavelength while closing the opening pattern 5a formed in the light shielding layer 5. It is characterized by.
[Selection] Figure 1

Description

  The present invention relates to an exposure mask used for lithography, a pattern forming method using lithography, a method for manufacturing a semiconductor device that performs this lithography, and a method for manufacturing a display device.

  In pattern formation using a lithography technique, for example, as shown in FIG. 6, proximity exposure is performed in which an exposure mask 51 is arranged close to the pattern formation substrate 21 on which the resist film 23 is formed. In order to form a minute pattern 23a on the resist film 23 by proximity exposure, it is necessary to cut light (for example, ultraviolet rays) having a wavelength that adversely affects pattern thinning out of the exposure light h irradiated from the light source. is there. For this reason, the proximity exposure apparatus is equipped with a cut filter 61 for cutting light of a predetermined wavelength.

As such a cut filter 61, for example, a configuration in which a glass thin film layer containing fine particles made of CuCI, CuBr or mixed crystals thereof is provided on the surface of a transparent substrate has been proposed (for example, see Patent Document 1 below). In addition to this, by using SiO ₂ containing an oxide of a predetermined metal material such as Al ₂ O ₃ or Li ₂ O, chemicals can be obtained without containing harmful substances such as Pb and As. A color filter having improved durability, devitrification resistance, and superiority formation has been proposed (see, for example, Patent Document 2 below).

JP-A-6-321579 JP 2005-75677 A

  However, in order to mount such a cut filter on the exposure apparatus, it is necessary to modify the apparatus. For this reason, there was a problem that the apparatus down time occurred and it was difficult to apply in a mass production factory.

  In order to solve such problems, the present invention provides an exposure mask having a light-shielding layer having an opening pattern, provided with a filter layer that transmits only light of a specific wavelength while closing the opening pattern of the exposure mask. It is characterized by that.

  The present invention is also a pattern forming method using such an exposure mask, a semiconductor device manufacturing method and a display device manufacturing method to which the pattern forming method is applied.

  By using the exposure mask having such a configuration, it is possible to perform pattern exposure in which light other than the specific wavelength is cut without providing a filter layer on the exposure apparatus side.

  As described above, according to the present invention, it is possible to perform pattern exposure in which light other than a specific wavelength for which a filter layer is provided on the exposure apparatus side is cut. For this reason, it is possible to form a fine pattern by pattern exposure in which light other than a specific wavelength is cut while maintaining the operation rate of the apparatus in a mass production factory without causing apparatus downtime for remodeling the exposure apparatus. It becomes possible.

  Embodiments to which the present invention is applied will be described below in detail with reference to the drawings.

<First Embodiment>
FIG. 1 is a block diagram for explaining the first embodiment, and shows an exposure process when a resist pattern is formed on a substrate by lithography. Embodiments will be described below in the order of the configuration of an exposure mask used in this exposure step and a pattern forming method using the exposure mask, using this drawing.

  As shown in this figure, an exposure mask 1 used in this exposure step is provided with a light shielding layer 5 and an antireflection layer 7 in this order on one main surface side of a light-transmitting substrate 3, and on the other main surface side. A filter layer 9 characteristic of the invention is provided.

The light transmissive substrate 3 is made of a material substrate having a good light transmissive field, such as a glass substrate or a quartz (SiO ₂ ) substrate.

  The light shielding layer 5 is made of, for example, a material film with good light shielding properties such as chromium (Cr), and includes an opening pattern 5a corresponding to the pattern formed here. Such a light shielding layer 5 is provided with an opening pattern 5a corresponding to a pattern forming portion by a resist film when pattern exposure using the exposure mask 1 is performed on a negative type resist film. . On the other hand, when pattern exposure using this exposure mask 1 is performed on a positive-type resist film, the pattern forming portion by the resist film is covered with the light-shielding layer 5, and the extracted pattern formed on the resist film The opening pattern 5a corresponding to the forming portion is provided. FIG. 1 illustrates a case where the resist film is a negative type.

  The antireflection layer 7 is for preventing the exposure light h irradiated to the exposure mask 1 from being reflected at the interface on the one principal surface side of the light transmissive substrate 3. The antireflection layer 7 is formed using a material that takes into consideration the refractive index of the light transmissive substrate 3, and is provided on the entire surface of the light transmissive substrate 3.

  The filter layer 9 is provided so as to block the opening pattern 5 a formed in the light shielding layer 5, and is provided, for example, in the form of a solid film on the entire surface of the light transmissive substrate 3. The filter layer 9 is made of a material film that transmits only the light h ′ having a specific wavelength out of the exposure light h irradiated to the exposure mask 1.

  For example, when an ArF excimer laser light source is used as the light source of the exposure apparatus, exposure light h having a wavelength of 193 nm is emitted from this light source. And if it is a case where it aims at enabling formation of a fine pattern using this exposure apparatus, the ultraviolet rays with a wavelength of 200-400 nm contained in the exposure light h irradiated from the light source are shielded (cut), It is assumed that the light shielding layer 5 is made of a material that transmits light having a wavelength shorter than this as “light h ′ having a specific wavelength”.

  Examples of such a light shielding layer 5 include a material film made of an ultraviolet sharp cut filter described in Patent Document 1 (Japanese Patent Laid-Open No. 6-321579) described above, and Patent Document 2 (Japanese Patent Laid-Open No. 2005-75677). A material film made of the described glass for sharp cut filters is used.

In addition to this, the material film constituting the light shielding layer 5 as described above is a material that transmits only light h ′ having a specific wavelength of the exposure light h and cuts light of other wavelengths. I just need it. For example, in the case of the light shielding layer 5 that cuts one or a plurality of specific wavelengths between 200 and 600 nm, ZnO, PbO, TiO ₂ , CeO ₂ , Sb ₂ O ₃ , B ₂ O ₃ , ITO, IZO, Oxide film such as Mo, Si, W, Ni, Ti, Cr, Zn, Pb, Ce, Sb, In, As, P, B, Na, K, Ca, Mg, Zr, C, Al, Fe, A material film such as Cu, Zr, Ag, Sn, Pt, S, Mn, Co, Au, or a compound thin film such as an oxide or halide containing these is used.

  The light shielding layer 5 as described above can be formed by an appropriately selected method from known methods such as sputtering, ion plating, vapor deposition, dip, spin, spray, sol-gel, and ink jet.

  The light shielding layer 5 exemplified above may be a single layer structure of the material film described above or a multilayer structure of a plurality of layers. Further, the light shielding layer 5 is formed with a film thickness that can sufficiently transmit the light h ′ having a specific wavelength and can sufficiently cut light having other wavelengths. For example, if it is the light shielding layer 5 which consists of a material film illustrated above, it is preferable that it is the range of 0.05-1 micrometer in film thickness.

  The light shielding layer 5 may be an organic film or an inorganic film as long as it is a material that transmits only light h ′ having a specific wavelength of the exposure light h and cuts light of other wavelengths. Further, the light shielding layer 5 may be provided with a wavelength conversion function for converting the exposure light h including light having a wavelength to be cut into light h ′ having a specific wavelength to be transmitted and transmitting the light. Further, the light shielding layer 5 is preferably colorless, but may be colored.

  Next, a pattern forming method using the exposure mask 1 having the above configuration will be described.

  First, a resist film 23 is formed on a semiconductor substrate, a substrate on which a thin film transistor is formed, and a pattern formation substrate 21 for forming a thin display device driven by a semiconductor element. Then, the exposure mask 1 is disposed on the resist film 23 so that the surface on which the light shielding layer 5 of the exposure mask 1 is formed faces the resist film 23. At this time, for example, a proximity exposure apparatus is used, and the pattern forming substrate 21 is placed on the stage of the exposure apparatus. Further, the exposure mask 1 is mounted in a predetermined state with respect to the exposure apparatus, and the exposure mask 1 is placed close to the pattern forming substrate 21 so as to face the pattern forming substrate 21.

  In the above state, the exposure mask 1 is irradiated with the exposure light h having a wavelength of 193 nm from the ArF excimer laser light source of the exposure apparatus. Then, the filter layer 9 provided on the exposure mask 1 cuts off the ultraviolet ray having a wavelength of 200 to 400 nm contained in the exposure light h and transmits only the light h ′ having a specific wavelength other than this. Further, the light h ′ having a specific wavelength is formed into the exposure light pattern H by passing through the opening pattern 5 a of the light shielding layer 5, and the resist film 23 is irradiated. Thereby, the resist film 23 is irradiated with an exposure light pattern H composed only of light h ′ having a specific wavelength from which ultraviolet rays are cut.

  Next, development processing of the resist film 23 is performed. Thereby, for example, if the resist film 23 is a negative type, a pattern 23 a made of a resist film is formed in the exposed portion irradiated with the exposure light pattern H. On the other hand, if the resist film is a positive type, a removed pattern from which the resist film has been removed is formed in the exposed portion irradiated with the exposure light pattern H, and the unexposed portion not irradiated with the exposure light pattern H is formed from the resist film. A pattern is formed.

  According to the first embodiment described above, the exposure light composed only of the light h ′ having a specific wavelength on the short wavelength side obtained by cutting the ultraviolet ray having a wavelength of 200 to 400 nm included in the exposure light h with respect to the resist film 23. Pattern H is irradiated. Thereby, the patterning accuracy of the resist film 23 is improved, and the pattern 23a formed by the resist film 23 can be miniaturized.

  And especially according to this 1st Embodiment, it is set as the structure which provided the filter layer 9 for cutting the ultraviolet-ray with a wavelength of 200-400 nm contained in the exposure light h in the exposure mask 1. FIG. For this reason, it is not necessary to modify the exposure apparatus such as mounting a cut filter. As a result, the operation of the exposure apparatus can be continued and can be applied in a mass production factory. This also does not reduce the throughput of products (such as semiconductor devices and display devices) manufactured using this exposure apparatus.

<Modification>
Next, a modification of the exposure mask 1 described with reference to FIG. 1 will be described with reference to FIG. The material of each layer is the same as described with reference to FIG.

  As shown in FIG. 2A, the exposure mask 1 a as a modification of the first embodiment may have a configuration in which a filter layer 9 is provided between the light transmissive substrate 3 and the light shielding layer 5.

  As shown in FIG. 2B, an exposure mask 1b as a modification of the first embodiment has a configuration in which a filter layer 9 is provided so as to cover a light shielding layer 5 provided on a light-transmitting substrate 3. May be. In this case, the filter layer 9 may be provided so as to completely close the opening pattern 5 a of the light shielding layer 5, and the filter layer 9 may have an opening on the light shielding layer 5. An antireflection layer 7 is provided on the filter layer 9.

  As shown in FIG. 2C, the exposure mask 1 c as a modification of the first embodiment may have a configuration in which a filter layer 9 is provided on the antireflection layer 7.

As illustrated in FIG. 2D, the exposure mask 1 d as a modification of the first embodiment may have a configuration in which the light transmissive substrate 3 also serves as the filter layer 9. In this case, for example, as described in Patent Document 2, a light-transmitting substrate 3 containing SiO ₂ (quartz) containing an oxide of a predetermined metal material such as Al ₂ O ₃ or Li ₂ O is filtered. It can be used as layer 9.

  As shown in FIG. 2E, an exposure mask 1e as a modification of the first embodiment may be configured such that the antireflection layer 7 covering the light shielding layer 5 also serves as the filter layer 9.

  The pattern forming method using the exposure masks 1a to 1e shown as the above modification can be performed in the same manner as described in the first embodiment, and the same effect can be obtained.

Second Embodiment
FIG. 3 is a block diagram for explaining the second embodiment, and shows an exposure process when a resist pattern is formed on a substrate by lithography. Embodiments will be described below in the order of the configuration of an exposure mask used in this exposure step and a pattern forming method using the exposure mask, using this drawing.

  As shown in this figure, the exposure mask 11 used in this exposure step is different from the exposure mask of the first embodiment described with reference to FIG. 1 in that the filter layer 19 is patterned. The configuration is the same as in the first embodiment.

  That is, the filter layer 19 in the exposure mask 11 is formed in a pattern so as to block a part of the opening pattern 5 a formed in the light shielding layer 5. The opening pattern 5a blocked by the filter layer 19 is, for example, an opening pattern 5a corresponding to a pattern having a different height or depth among patterns formed by lithography using the exposure mask 11.

  For example, when pattern exposure using the exposure mask 11 is performed on a negative type resist film, the light shielding layer 5 is provided with an opening pattern 5a corresponding to a pattern forming portion made of a resist film. In this case, the filter layer 19 is provided in a state of closing the opening pattern 5a corresponding to the pattern forming portion having a low height among the resist film patterns formed corresponding to the opening pattern 5a. FIG. 3 illustrates a case where the resist film is a negative type.

  On the other hand, when the pattern exposure using the exposure mask 11 is performed on the positive type resist film, the light shielding film 5 has an opening pattern 5a corresponding to the formation portion of the extraction pattern formed on the resist film. Provided. In this case, it is assumed that the filter layer 19 is provided in a state in which the opening pattern 5a corresponding to the formation portion of the shallow extraction pattern among the extraction patterns of the resist film formed corresponding to the opening pattern 5a is closed.

  The filter layer 19 patterned as described above is made of a material film that transmits only the light h ′ having a specific wavelength out of the exposure light h irradiated to the exposure mask 11. For example, it is assumed that the exposure light h used in pattern exposure using the exposure mask 11 includes a first wavelength λ1 and a second wavelength λ2. In this case, it is assumed that the filter layer 9 is composed of a material film that transmits only the light having the first wavelength λ1 as the light h ′ having the specific wavelength and blocks (cuts) the light having the second wavelength λ2. The first wavelength λ1 and the second wavelength λ2 each include a certain wavelength range.

  The material film constituting the filter layer 19 as described above is appropriately selected from the material films constituting the filter layer described in the first embodiment in accordance with the light-shielding transmission characteristics for the first wavelength λ1 and the second wavelength λ2. To be used.

Furthermore, the filter layer 19 has a wavelength conversion function for converting the light of the second wavelength λ2 to be cut by the filter layer 19 into the light of the first wavelength λ1 to be transmitted through the filter layer 19. There may be. This is the same as in the first embodiment. In this case, the exposure light h irradiated to the exposure mask 11 may be composed only of the second wavelength λ2.

  Next, a pattern forming method using the exposure mask 11 having the above configuration will be described.

  First, a resist film 23 is formed on a semiconductor substrate, a substrate on which a thin film transistor is formed, and a pattern formation substrate 21 for forming a thin display device driven by a semiconductor element. This resist film 23 contains a substance (reaction initiator) that starts a reaction by irradiation with a first wavelength λ1 that is a specific wavelength and a substance (reaction initiator) that starts a reaction only by irradiation with a second wavelength λ2. Suppose you are.

  Then, the exposure mask 1 is disposed on the resist film 23 so that the light shielding layer 5 in the exposure mask 11 faces the resist film 23 side. At this time, for example, a proximity exposure apparatus is used, the pattern forming substrate 21 is placed on the stage of the exposure apparatus, and the exposure mask 11 is mounted on the exposure apparatus in a predetermined state.

  In the above state, exposure light h (λ1 + λ2) including light of the first wavelength λ1 and light of the second wavelength λ2 is irradiated from the light source of the exposure apparatus to the exposure mask 11. In the portion where the filter layer 19 is provided, the filter layer 19 cuts the second wavelength λ2 included in the exposure light h, and the light h ′ (λ1) of the first wavelength λ1, which is a specific wavelength other than this. Permeate only. On the other hand, in the portion where the filter layer 19 is not provided, the exposure light h (λ1 + λ2) that has passed through the opening of the filter layer 19 is transmitted as it is.

  Thereafter, the light h ′ having the first wavelength λ1 is shaped into the first exposure pattern H1 by passing through the opening pattern 5a of the light shielding layer 5, and exposure including the light having the first wavelength λ1 and the light having the second wavelength λ2. The light h is shaped into the second exposure pattern H2. For the resist film 23, the first exposure light pattern H1 (λ1) obtained by shaping only the light h ′ having the first wavelength λ1, which is a specific wavelength, and the light having the first wavelength λ1 and the light having the second wavelength λ2. Is irradiated with a second exposure light pattern H2 (λ1 + λ2) that is shaped with exposure light h (λ1 + λ2).

  Thus, for example, in the case of a negative resist film 23, the portion of the resist film 23 irradiated with the first exposure light pattern H1 (λ1) is polymerized by the reaction of a substance that starts the reaction upon irradiation with the first wavelength λ1. Is advanced. On the other hand, the resist film 23 portion irradiated with the second exposure light pattern H2 (λ1 + λ2) starts the reaction only by the irradiation of the second wavelength λ2, together with the reaction of the substance that starts the reaction by the irradiation of the first wavelength λ1. Polymerization proceeds by reaction of the substances to be produced. In the resist film 23 portion irradiated with the second exposure light pattern H2 (λ1 + λ2), more polymerization reaction proceeds as compared with the resist film 23 portion irradiated with the first exposure light pattern H1 (λ1). It is done.

  Next, development processing of the resist film 23 is performed. Thereby, for example, if the resist film 23 is a negative type, a pattern 23a made of a resist film is formed in the exposed portion irradiated with the first exposure light pattern H1. Further, a pattern 23b made of a resist film is formed in the exposed portion irradiated with the second exposure light pattern H2. This pattern 23b is a pattern having a film thickness higher than that of the pattern 23a.

  If the resist film is a positive type, a portion of the resist film 23 irradiated with the first exposure light pattern H1 (λ1) is formed with a blank pattern in which the register film is removed in the exposed portion. In addition, a deeper pattern than the portion irradiated with the first exposure light pattern H1 (λ1) is formed in the exposure portion irradiated with the second exposure light pattern H2 (λ1 + λ2).

  According to the second embodiment described above, the patterns 23a and 23b having different heights can be formed by a single lithography using the exposure mask 11. Thereby, in a semiconductor device or the like manufactured by applying such a pattern forming method, it is possible to realize high throughput and low cost by reducing the number of lithography.

  Here, as another example of a method of forming a pattern made of a resist film having a different shape (dimension, thickness) and film hardness using a proximity exposure apparatus, a process using a halftone mask is also considered. . However, the method using a halftone mask has a problem that the exposure distribution is limited by the mask, and the specification cannot be changed and the dimensions and thickness (remaining film thickness) cannot be finely adjusted. Therefore, it has been difficult to use an actual product such as a liquid crystal display device described later.

  On the other hand, in the case of the method of the second embodiment described above, it is possible to change the specification and finely adjust the dimensions, thickness (remaining film thickness), and shape by changing the wavelength of the exposure light. is there. Therefore, it is possible to realize the application of the actual product to the production process.

<Modification>
Next, a modification of the exposure mask 11 described with reference to FIG. 3 will be described with reference to FIG. The material of each layer is the same as described with reference to FIG.

  As shown in FIG. 4A, the exposure mask 11 a as a modification of the second embodiment may have a configuration in which a filter layer 19 is provided between the light-transmitting substrate 3 and the antireflection layer 7. . In this case, the filter layer 19 may be provided so as to completely close the opening pattern 5 a of the light shielding layer 5, and the filter layer 19 may be stacked on the light shielding layer 5.

  As shown in FIG. 4B, the exposure mask 11 b as a modification of the second embodiment may have a configuration in which a filter layer 19 is formed on the antireflection layer 7 as a pattern. Even in this case, it is preferable that the filter layer 19 is patterned in a state in which the edge is overlapped with the light shielding layer 5 so as to completely block the opening pattern 5a of the light shielding layer 5.

  As shown in FIG. 4C, the exposure mask 11 c as a modification of the second embodiment may be configured such that a part of the antireflection layer 7 covering the light shielding layer 5 also serves as the filter layer 19. The part of the antireflection layer 7 that also serves as the filter layer 19 is provided so as to completely block the inside of the opening pattern 5 a of the light shielding layer 5. Even in this case, it is preferable that the filter layer 19 is patterned in a state where the edge is overlapped with the light shielding layer 5 so as to completely close the inside of the opening pattern 5a of the light shielding layer 5.

  The pattern forming method using the exposure masks 11a to 11c shown as the above modification can be performed in the same manner as described in the second embodiment, and the same effect can be obtained.

<Manufacturing Method of Semiconductor Device and Manufacturing Method of Display Device>
Next, as a specific example of manufacturing a semiconductor device to which the pattern forming method of the second embodiment described above is applied, manufacture of a liquid crystal display device is illustrated.

  FIG. 5 shows a main part of a liquid crystal cell in a transflective and semi-reflective VA mode liquid crystal display device 30. The liquid crystal display device 30 includes a liquid crystal layer LC sandwiched between a TFT substrate 31 on which a thin film transistor (TFT) is formed and a counter substrate 41.

  In each pixel of the TFT substrate 31, a transmissive display part 31a and a reflective display part 31b are set. The surface of the interlayer insulating film 32 covering the TFT substrate 31 is formed flat in the transmissive display portion 31a, and is formed in an uneven shape in the reflective display portion 31b. On the interlayer insulating film 32, a pixel electrode 33 including a transparent electrode 33a provided in the transmissive display portion 31a and a reflective electrode 33b provided in the reflective display portion 31b is disposed. The pixel electrode 33 is connected to a TFT provided on the TFT substrate 31 through a connection hole formed in the interlayer insulating film 32. Although not shown here, the pixel electrode 33 is covered with an alignment film.

  On the other hand, on the surface of the counter substrate 41 facing the liquid crystal layer LC, a gap adjustment layer 43 for adjusting the cell gaps g1 and g2 is provided via the color filter layer. The transparent electrode 44 is provided in a solid film shape so as to cover the gap adjusting layer 43. On the transparent electrode 44, a columnar spacer 45 for defining the distance between the TFT substrate 31 and the counter substrate 41 and an aligner 46 for regulating the alignment of the liquid crystal molecules m are formed in a pattern. Although illustration is omitted here, the transparent electrode 44, the columnar spacer 45, and the aligner 46 are covered with an alignment film.

  In manufacturing the liquid crystal display device 30 having the above-described configuration, for example, the pattern forming method of the present invention can be applied to the formation of the columnar spacer 45 and the aligner 46. As a result, the columnar spacer 45 and the director 46 having different heights can be simultaneously formed by one lithography. In addition, the pattern forming method of the present invention can be applied to the formation of the gap adjusting layer 43 having a step for adjusting the cell gaps g1 and g2.

  The pattern forming method of the present invention is not only applied to the formation of the components on the counter substrate 41 side in the liquid crystal display device described above, but also the components on the TFT substrate 31 side, the components of other display devices, Furthermore, the present invention can be applied to formation of a plurality of components having different heights and components having steps among components of a semiconductor device other than the display device.

It is a block diagram explaining 1st Embodiment. It is sectional drawing which shows the modification of the exposure mask used in 1st Embodiment. It is a block diagram explaining 2nd Embodiment. It is sectional drawing which shows the modification of the exposure mask used in 2nd Embodiment. It is principal part sectional drawing of the display apparatus produced by applying 2nd Embodiment. It is a block diagram explaining the conventional lithography technique.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1,1a, 1b, 1c, 1d, 1e, 11a, 11b, 11c ... Exposure mask, 3 ... Light-transmitting substrate, 5 ... Light-shielding layer, 5a ... Opening pattern, 7 ... Antireflection layer, 9, 19 ... Filter layer , 23... Resist film, 23 a. Pattern, h... Exposure light, H... Exposure light pattern, H 1... First exposure light pattern composed of only the first wavelength, H 2. Second exposure light pattern, λ1... First wavelength, λ2.

Claims (10)

In an exposure mask having a light shielding layer in which an opening pattern is formed,
An exposure mask comprising: a filter layer that transmits only light of a specific wavelength in a state of closing an opening pattern formed in the light shielding layer. The exposure mask according to claim 1.
An exposure mask, wherein the filter layer is provided on the entire surface. The exposure mask according to claim 1.
The exposure mask, wherein the filter layer is patterned in a state of closing a part of an opening pattern formed in the light shielding layer. A pattern forming method of patterning the resist film by developing the resist film after irradiating the resist film with an exposure light pattern,
When irradiating the resist film with the exposure light pattern,
An exposure mask including a light shielding layer having an opening pattern formed therein and a filter layer that transmits only light of a specific wavelength while closing the opening pattern is disposed opposite to the resist film formed on the substrate,
Irradiating exposure light from the exposure mask side to irradiate the resist film with an exposure light pattern that passes through the filter layer and passes through the opening pattern of the light shielding layer. . In the pattern formation method of Claim 4,
The filter layer is provided on the entire surface of the exposure mask;
The pattern forming method of irradiating the resist film with only the exposure light pattern transmitted through the filter layer. In the pattern formation method of Claim 4,
The filter layer is patterned in a state of closing a part of the opening pattern,
Irradiating the resist film with an exposure pattern that has passed through the filter layer and passed through the opening pattern, and an opening portion of the filter layer and an exposure light pattern that has passed through the opening pattern. Method. In the pattern formation method of Claim 6,
The exposure light includes a first wavelength that is transmitted through the filter layer and a second wavelength that is blocked by the filter layer,
The resist film includes the first exposure light pattern composed of only the first wavelength formed by passing through the filter layer and passing through the opening pattern, and the opening pattern together with the opening portion of the filter layer. A second exposure light pattern composed of the first wavelength and the second wavelength formed by passing through is irradiated,
Patterns with different heights are formed on the irradiation portion of the first exposure light pattern and the irradiation portion of the second exposure light pattern. In the pattern formation method of Claim 7,
The said resist film contains the material which reacts only by the said 2nd wavelength irradiation with the material which reacts by the said 1st wavelength irradiation. The pattern formation method characterized by the above-mentioned. A method of manufacturing a semiconductor device comprising a step of patterning the resist film by developing the resist film after irradiating the resist film with an exposure light pattern,
When irradiating the resist film with the exposure light pattern,
An exposure mask including a light shielding layer having an opening pattern formed therein and a filter layer that transmits only light of a specific wavelength while closing the opening pattern is disposed opposite to the resist film formed on the substrate,
By irradiating exposure light from the exposure mask side, the resist film is irradiated with an exposure light pattern that passes through the filter layer and passes through the opening pattern of the light shielding layer. Production method. A method of manufacturing a display device comprising a step of patterning the resist film by developing the resist film after irradiating the resist film with an exposure light pattern,
When irradiating the resist film with the exposure light pattern,
An exposure mask including a light shielding layer having an opening pattern formed therein and a filter layer that transmits only light of a specific wavelength while closing the opening pattern is disposed opposite to the resist film formed on the substrate,
By irradiating exposure light from the exposure mask side, the resist film is irradiated with an exposure light pattern which is transmitted through the filter layer and passes through the opening pattern of the light shielding layer. Production method.

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