[go: up one dir, main page]

JP2008158157A - フォトレジスト組成物及びパターン形成方法 - Google Patents

フォトレジスト組成物及びパターン形成方法 Download PDF

Info

Publication number
JP2008158157A
JP2008158157A JP2006345577A JP2006345577A JP2008158157A JP 2008158157 A JP2008158157 A JP 2008158157A JP 2006345577 A JP2006345577 A JP 2006345577A JP 2006345577 A JP2006345577 A JP 2006345577A JP 2008158157 A JP2008158157 A JP 2008158157A
Authority
JP
Japan
Prior art keywords
group
formula
photoresist composition
carbon atoms
general formula
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006345577A
Other languages
English (en)
Japanese (ja)
Inventor
Yasuo Masuda
靖男 増田
Kaoru Ishikawa
薫 石川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Priority to JP2006345577A priority Critical patent/JP2008158157A/ja
Priority to PCT/JP2007/070368 priority patent/WO2008078447A1/ja
Priority to TW96148819A priority patent/TW200837496A/zh
Publication of JP2008158157A publication Critical patent/JP2008158157A/ja
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2006345577A 2006-12-22 2006-12-22 フォトレジスト組成物及びパターン形成方法 Pending JP2008158157A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2006345577A JP2008158157A (ja) 2006-12-22 2006-12-22 フォトレジスト組成物及びパターン形成方法
PCT/JP2007/070368 WO2008078447A1 (ja) 2006-12-22 2007-10-18 フォトレジスト組成物及びパターン形成方法
TW96148819A TW200837496A (en) 2006-12-22 2007-12-19 Photoresist composition and pattern formation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006345577A JP2008158157A (ja) 2006-12-22 2006-12-22 フォトレジスト組成物及びパターン形成方法

Publications (1)

Publication Number Publication Date
JP2008158157A true JP2008158157A (ja) 2008-07-10

Family

ID=39562241

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006345577A Pending JP2008158157A (ja) 2006-12-22 2006-12-22 フォトレジスト組成物及びパターン形成方法

Country Status (3)

Country Link
JP (1) JP2008158157A (zh)
TW (1) TW200837496A (zh)
WO (1) WO2008078447A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9023580B2 (en) 2011-11-24 2015-05-05 Tokyo Ohka Kogyo Co., Ltd. Method of forming polymeric compound, resist composition and method of forming resist pattern

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5232663B2 (ja) * 2009-01-14 2013-07-10 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、高分子化合物及び化合物
JP2013195497A (ja) * 2012-03-16 2013-09-30 Sumitomo Bakelite Co Ltd フォトレジスト用樹脂組成物

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3639658A (en) * 1969-04-01 1972-02-01 Union Carbide Corp Phenolic resin compositions modified with an epsilon caprolactone
JP3189905B2 (ja) * 1991-08-21 2001-07-16 大日本インキ化学工業株式会社 ポリウレタンフォーム用樹脂組成物
JP2005036033A (ja) * 2003-07-16 2005-02-10 Sumitomo Bakelite Co Ltd フォトレジスト用フェノール樹脂
JP4238152B2 (ja) * 2004-02-02 2009-03-11 富士フイルム株式会社 感光性組成物

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9023580B2 (en) 2011-11-24 2015-05-05 Tokyo Ohka Kogyo Co., Ltd. Method of forming polymeric compound, resist composition and method of forming resist pattern

Also Published As

Publication number Publication date
TW200837496A (en) 2008-09-16
WO2008078447A1 (ja) 2008-07-03

Similar Documents

Publication Publication Date Title
JP3943058B2 (ja) ポジ型フォトレジスト組成物、及びレジストパターン形成方法
TWI842970B (zh) 正型感光性樹脂組成物、硬化膜、及光阻膜
CN103329042B (zh) 光致抗蚀剂用树脂组合物
JP5090833B2 (ja) ポジ型ホトレジスト組成物、及びそれを用いた感光性膜付基板
CN106933034B (zh) 正型光致抗蚀剂组合物
JP6302643B2 (ja) ポジ型レジスト組成物、及びレジストパターン形成方法、並びに、メタル層からなるパターンの形成方法、及び貫通電極の製造方法
JP3977307B2 (ja) ポジ型フォトレジスト組成物及びレジストパターン形成方法
KR20100088525A (ko) 포지티브형 레지스트 조성물 및 이것을 이용한 레지스트 패턴의 형성 방법
JP2008158157A (ja) フォトレジスト組成物及びパターン形成方法
TWI557158B (zh) 光阻劑用樹脂組成物
JP2009075436A (ja) フォトレジスト用樹脂組成物
JP3666839B2 (ja) ポジ型ホトレジスト組成物およびその製造方法
JP7806747B2 (ja) 感光性樹脂組成物、レジスト膜、レジスト下層膜及びレジスト永久膜
JP4273897B2 (ja) フォトレジスト用樹脂の製造方法
JP4028450B2 (ja) ポジ型フォトレジスト組成物及びレジストパターン形成方法
JP3977294B2 (ja) ポジ型フォトレジスト組成物及びレジストパターン形成方法
JP2005036033A (ja) フォトレジスト用フェノール樹脂
JP2021091798A (ja) フォトレジスト用のノボラック型フェノール樹脂およびその製造方法、ならびにフォトレジスト用の感光性樹脂組成物
JP2001240643A (ja) フェノールノボラック樹脂、その合成方法、およびそれを用いたポジ型ホトレジスト組成物
JP2004168964A (ja) ノボラック樹脂、その製造方法及びポジ型ホトレジスト組成物
JP2001240642A (ja) フェノールノボラック樹脂、およびそれを用いたポジ型ホトレジスト組成物
JP2001240641A (ja) フェノールノボラック樹脂、およびそれを用いたポジ型ホトレジスト組成物