JP2008034578A - Semiconductor device and manufacturing method thereof - Google Patents

Abstract

An object of the present invention is to produce a nanoscale conductive region or insulating region with high accuracy by a simple method.
The semiconductor device includes a conductive region (a source electrode and a drain electrode) in at least a part of a thin film, wherein the metal nanoparticle is interposed via an insulating molecule. The bonded thin film 15 is irradiated with energy rays E, so that the bonds of the insulating molecules are released, and the metal nanoparticles 14 are melted and bonded.
[Selection] Figure 1

Description

  The present invention relates to a semiconductor device having a nanoscale conductive path or insulating path and a method for manufacturing the same.

  In the fabrication of molecular electronics devices that make use of the function of a single or a small number of molecules, it is necessary to send a signal from the outside in order to control the function. As the most general method, there is a method in which a wire-like molecule and an electrode are brought into contact with each other, and a current flowing when the applied voltage is changed is read (for example, see Non-Patent Document 1).

  An electrode pair (nano-gap electrode) having a gap of the same size is required in order to bring nano-scale size molecules into contact with the electrode at the intended position. For the production, electron beam lithography, focused ion beam lithography, electromigration method or the like is used (see, for example, Non-Patent Documents 2, 3, and 4). However, in any method, it is difficult to produce a nanogap electrode, and it is necessary to select production conditions and apparatus control with considerable care, and lithography requires many steps.

  The electromigration method probabilistically produces nanogap electrodes, so it is easy for research purposes, but it cannot withstand mass production. Ensuring a nanoscale sized signal input / output method is an issue in the fabrication of molecular electronics devices, and a method capable of easily and accurately fabricating a nanogap electrode is required.

  In addition, high integration requires not only a gap but also a small electrode width, which is an important issue for taking advantage of the size of the molecular scale device.

Patrick J. Castle and Paul W. Bohn "Interfacial Scattering at Electrchemically Fabricated Atom-Scale Junctions between Thin Gold Film Electrodes in a Microfluidic Channel" Anal. Chem. 77, p243-249, 2005 Kazuhito Tsukakoshi et al. “Preparation and application of nano-gap electrodes for exploration of electrical conduction in nano-scale materials” Applied Physics, Vol. 75, No. 3, p332-337, 2006 Takashi Nagase et al. “Maskless Fabrication of nanogap electrodes by using Ga-focused ion beam etching” J. Microlith., Microfab., Microsyst. 5, 011006≡1-6, 2006 Takashi Nagase et al. “Direct Fabrication of nano-gap electrodes by focus ion beam etching” Thin Solid Films 499, p279-284, 2006

  The problem to be solved is that it is difficult to produce a nanogap electrode, that is, a nanoscale order conductive region or insulating region. For example, it is necessary to select manufacturing conditions and control the apparatus fairly carefully, and in lithography, many processes must be performed.

  An object of the present invention is to produce a nanoscale-order conductive region or insulating region with high accuracy by a simple method.

  The semiconductor device of the present invention (first semiconductor device) is a semiconductor device provided with a conductive region in at least a part of a thin film, and the conductive region includes the metal nanoparticle bonded through an insulating molecule. By irradiating the thin film with energy rays, the bonds of the insulating molecules are released, and the metal nanoparticles are melted and bonded.

  In the semiconductor device of the present invention (first semiconductor device), the thin film in which the metal nanoparticles are bonded via the insulating molecules is irradiated with energy rays, so that the bonding of the insulating molecules is released. In addition, since the conductive region is formed by melting and bonding the metal nanoparticles, the conductive region is formed by a simple method of irradiation with energy rays. In general, energy rays can be focused and irradiated to a fine spot. Especially, electron beams, focused ion beams, etc. can be narrowed down to the nanoscale order, so that the conductive region is formed in the nanoscale order. It will be.

  The semiconductor device (second semiconductor device) of the present invention is a semiconductor device provided with an insulating region in at least a part of a thin film, and the insulating region has the metal nanoparticle bonded through a conductive molecule. The thin film is one in which the conductive molecules are broken by irradiating energy rays, or the bond with the conductive molecules is broken.

  In the semiconductor device (second semiconductor device) of the present invention, the conductive molecule is destroyed by irradiating the thin film in which the metal nanoparticles are bonded via the conductive molecule with energy rays. Alternatively, since the bond with the conductive molecule is broken, the insulating region is formed by a simple method of irradiation with energy rays. In general, energy rays can be focused on a fine spot for irradiation, and in particular, electron beams, focused ion beams, etc. can be narrowed down to the nano-scale order, so the insulating region is highly accurate to the nano-scale order. Will be formed.

  A method for manufacturing a semiconductor device according to the present invention (first manufacturing method) is a method for manufacturing a semiconductor device in which a conductive region is provided on at least a part of a thin film, wherein metal nanoparticles are insulating molecules. The film is formed by irradiating an energy beam to a thin film bonded through a metal to break the bonding of the insulating molecules and melt and bond the metal nanoparticles.

  In the manufacturing method (first manufacturing method) of the semiconductor device of the present invention, the thin film in which the metal nanoparticles are bonded through the insulating molecules is irradiated with energy rays, so that the bonds of the insulating molecules are released and the metal nano particles are released. Since the conductive region is formed by melting and bonding the particles, the conductive region is formed by a simple method of irradiation with energy rays. In general, energy rays can be focused on a fine spot for irradiation. Especially for electron beams, focused ion beams, etc., it can be narrowed down to the nanoscale order, so the conductive region is highly accurate to the nanoscale order. Formed.

  A method for manufacturing a semiconductor device according to the present invention (second manufacturing method) is a method for manufacturing a semiconductor device in which an insulating region is provided on at least a part of a thin film, and the step of forming the insulating region includes metal nanoparticles. The thin film bonded through the conductive molecule is irradiated with energy rays to destroy the conductive molecule or to break the bond with the conductive molecule.

  In the method for manufacturing a semiconductor device of the present invention (second manufacturing method), the conductive molecule is destroyed or irradiated by irradiating an energy beam to a thin film in which metal nanoparticles are bonded via a conductive molecule. Since the insulating region is formed by releasing the bond with the active molecule, the insulating region is formed by a simple method of irradiation with energy rays. In general, energy rays can be focused on a fine spot for irradiation, and in particular, electron beams, focused ion beams, etc. can be narrowed down to the nano-scale order, so the insulating region is highly accurate to the nano-scale order. Formed.

  According to the semiconductor device (first semiconductor device) of the present invention, the conductive region is formed at the intended position with high accuracy by a simple method of irradiating the thin film with energy rays. In addition, since metal nanoparticles are used for the thin film, the conductive region has a line width equivalent to that of the metal nanoparticles, and thus there is an advantage that high integration can be achieved.

  According to the semiconductor device (second semiconductor device) of the present invention, the insulating region is formed at the intended position with high accuracy by a simple method of irradiating the thin film with energy rays. In addition, since the insulating region is formed by breaking the conductive molecule or breaking the bond with the conductive molecule, it becomes an insulating region having a line width equivalent to that of the conductive molecule. There is an advantage that integration can be achieved.

  According to the semiconductor device manufacturing method (first manufacturing method) of the present invention, since the conductive region is formed by irradiating the thin film with energy rays, there is an advantage that it is a simple method. Moreover, since the energy beam can be irradiated to the intended position on the thin film, the conductive region can be formed at the intended position with high accuracy. Since the conductive region is formed by breaking the bonds of the insulating molecules and melting and bonding the metal nanoparticles, a fine conductive region on the order of nanoscale can be formed. Therefore, high integration can be achieved.

  According to the method for manufacturing a semiconductor device of the present invention (second manufacturing method), the insulating region is formed by irradiating the thin film with energy rays, so that there is an advantage that it is a simple method. Further, since the energy beam can be irradiated to the intended position on the thin film, the insulating region can be formed at the intended position with high accuracy. Further, since the insulating region is formed by breaking the conductive molecule or breaking the bond with the conductive molecule, it is possible to form a fine insulating region on the order of nanoscale. Therefore, high integration can be achieved.

  An embodiment (first example) according to a semiconductor device and a method for manufacturing the semiconductor device of the present invention will be described with reference to the schematic cross-sectional view of FIG. FIG. 1 shows a semiconductor device including electrodes (source electrode and drain electrode) having a nanoscale line width and a nanoscale gap in the semiconductor device.

  As shown in FIG. 1A, as an example, a semiconductor device (for example, a field effect transistor) including a top contact type source electrode, a drain electrode, and a bottom contact type gate electrode is shown. The electrode contact structure of the semiconductor device may be either a top contact or a bottom contact for the source electrode, the drain electrode, and the gate electrode.

First, the semiconductor film 13 is formed on the surface of the substrate 10 on which the insulating film 11 is formed on the front surface and the gate electrode 12 is formed on the back surface. When a silicon substrate is used as the substrate 10, for example, a silicon oxide film (SiO ₂ ), silicon nitride (Si ₃ N ₄ ), aluminum oxide (Al ₂ O ₃ ), or the like can be used as the insulating film 11. The silicon oxide film can be formed by, for example, a thermal oxidation method. The silicon nitride film can be formed by, for example, a CVD method. The aluminum oxide film can be formed by, for example, an anodic oxidation method. The substrate 10 may be a resin substrate such as a glass substrate, flexible polyethylene terephthalate (PET), polycarbonate (PC), polyethersulfone (PES). In the case of such a resin substrate, the insulating film 11 is formed by spin coating, for example, a polyvinylphenol (PVP) polymer insulating film.

  The gate electrode 12 formed on the back surface of the substrate 10 is formed by evaporating a metal such as gold or platinum by an electron beam (EB) evaporation method or the like. The semiconductor film 13 is formed by dipping, casting, spin coating or the like using a solution obtained by diluting porphyrin-based molecules, polyphenyl-based molecules, and polyacene-based molecules with an organic solvent (toluene).

  Next, a thin film 15 made of metal nanoparticles 14 whose surfaces are protected by insulating organic molecules is formed on the surfaces of the substrate 10 and the semiconductor film 13. Examples of the production method include a coating method, a solution dipping method, a spin coating method, a Langmuir-Blodget (LB) method, an ink jet method, a screen printing method, a spray method, a dip coating method, and a mold transfer method.

  For example, a metal nanoparticle is composed of gold, platinum, or silver having a chain non-conjugated molecule (butanethiol, pentanethiol, etc.) with one end point being a thiol group as an insulating organic molecule (a protective film for the metal nanoparticle). Nanoparticles with a diameter of about 10 ± 5 nm are used.

  Next, as shown in FIG. 1B, an energy beam E is irradiated to the position where the source electrode and the drain electrode on the thin film 15 are to be produced. As the energy beam E, an electron beam, a focused ion beam, an X-ray, or the like can be used, which breaks the bond between the insulating organic molecules of the metal nanoparticles 14 of the thin film 15 and melts the metal nanoparticles 14. Combine.

  As a result, the source electrode 16 and the drain electrode 17 are formed at the positions irradiated with the energy rays E of the thin film 15 as shown in the schematic configuration perspective views of FIGS. In the case of a gold nanoparticle monolayer film having a diameter of about 10 nm having a chain non-conjugated molecule as a protective film, an electron beam of 5 keV is irradiated in a range of 100 μm × 100 μm for about 10 minutes. If it is a narrow region of about 10 nm × 10 nm, a focused ion beam, X-ray or the like is used. In the case of the focused ion beam, the energy beam irradiation is, for example, irradiation with light of several meV to hundreds of tens eV in the case of light irradiation, irradiation of energy of several keV to hundreds of keV in the case of electron beams. Is irradiated with energy of several keV to several hundred keV, and in the case of X-rays, energy of several hundred keV to several MeV is irradiated. Further, if the insulating organic molecule is a single molecule or an oligomer molecule, light irradiation or an electron beam is desirable, and an electron beam or a focused ion beam is desirable for a fine region.

  Thereafter, the insulating molecules (not shown) separated from the gold nanoparticles 14 by heating and melting are removed by washing the substrate with, for example, acetone, isopropyl alcohol (IPA) and running water for about 5 minutes each. In this manner, the semiconductor device 1 having the source electrode 16 and the drain electrode 17 having a nanoscale width and a nanoscale gap is formed. In the semiconductor device 1, the semiconductor film 13 becomes a channel layer.

  Therefore, as shown in FIGS. 1 (3) and 2, the semiconductor device 1 of the present invention has a source electrode 16 that is a conductive region on at least a part of a thin film 15 in which metal nanoparticles are bonded via insulating molecules. The drain electrode 17 is formed, and the source electrode 16 and the drain electrode 17 are obtained by irradiating the thin film 15 with energy rays, so that the bonds of the insulating molecules are released, and the metal nanoparticles 14 are melted. Are combined.

  In the semiconductor device 1 and the manufacturing method thereof, the source electrode 16 and the drain electrode 17 having a nanoscale width and a gap can be formed at an intended position with good controllability. The energy beam E used here, such as an electron beam, a focused ion beam, and an X-ray, has a very high controllability of, for example, several nanometers to several tens of nanometers. The electrode can be formed with very high accuracy. Therefore, the wiring area can be reduced, which is advantageous for high integration.

  In the manufacturing method described above, since the lithography technique is not used, the electrode manufacturing process can be greatly reduced. In addition, it is a simple process that does not require patterning of metal nanoparticles.

  As will be described later, the leakage current after the source electrode 16 and the drain electrode 17 are formed can be reduced by bonding the metal nanoparticles 14 with insulating organic molecules when forming the metal nanoparticle thin film 15.

  Next, an embodiment (second example) according to a semiconductor device and a method for manufacturing the semiconductor device of the present invention will be described with reference to the schematic cross-sectional view of FIG. FIG. 3 shows a source electrode and a drain electrode having a nanoscale line width and a nanoscale gap for a molecular network transistor as an example.

As shown in FIG. 3A, a substrate 10 having an insulating film 11 on the front surface and a gate electrode 12 formed on the back surface is formed. When a silicon substrate is used as the substrate 10, for example, a silicon oxide film (SiO ₂ ), silicon nitride (Si ₃ N ₄ ), aluminum oxide (Al ₂ O ₃ ), or the like can be used as the insulating film 11. The silicon oxide film can be formed by, for example, a thermal oxidation method. The silicon nitride film can be formed by, for example, a CVD method. The aluminum oxide film can be formed by, for example, an anodic oxidation method. The substrate 10 may be a resin substrate such as a glass substrate, flexible polyethylene terephthalate (PET), polycarbonate (PC), polyethersulfone (PES). In the case of such a resin substrate, the insulating film 11 is formed by spin coating, for example, a polyvinylphenol (PVP) polymer insulating film.

  The gate electrode 12 formed on the back surface of the substrate 10 is formed by evaporating a metal such as gold or platinum by an electron beam (EB) evaporation method or the like.

  Next, a thin film 15 made of metal nanoparticles 14 whose surface is protected by insulating organic molecules is formed on the surface of the substrate 10. Examples of the production method include a coating method, a solution dipping method, a spin coating method, a Langmuir-Blodget (LB) method, an ink jet method, a screen printing method, a spray method, a dip coating method, and a mold transfer method.

  The insulating organic molecule (protective film) that has been metal-bonded in advance is replaced with another insulating organic molecule having higher insulating properties. This substitution reaction can be performed, for example, by immersing the substrate in a solvent in which organic molecules having high insulating properties are dissolved. As a result, the leakage current at the final stage can be further greatly reduced.

  A desired molecule is bonded to the thin film made of the metal nanoparticles by a dipping method, a spin coating method, an ink jet method, a screen printing method, a spray method, a dip coating method, a mold transfer method, or the like to form a network. The desired molecule is, for example, a conductive polymer, a semiconductor organic molecule, a functional molecule, and the like, and a molecule having a functional group that is easily bonded to metal nanoparticles. Examples of the functional group that easily binds to the metal nanoparticles include a thiol group, an amino group, and a carboxyl group. Examples of the conductive polymer include polyacetylene-based molecules and polypyrrole-based molecules. Examples of the semiconductor organic molecule include porphyrin-based molecules, polyphenyl-based molecules, and polyacene-based molecules. Examples of the functional molecule include a photochromic molecule and a porphyrin derivative molecule.

  Next, as shown in FIG. 3B, an energy beam E is irradiated to a position where the source electrode and the drain electrode on the thin film 15 are to be produced. As the energy beam E, an electron beam, a focused ion beam, an X-ray, or the like can be used, which breaks the bond between the insulating organic molecules of the metal nanoparticles 14 of the thin film 15 and melts the metal nanoparticles 14. Combine.

  As a result, the source electrode 16 and the drain electrode 17 are formed at the position irradiated with the energy beam E of the thin film 15. In the case of the focused ion beam, the energy beam irradiation is, for example, irradiation with light of several meV to hundreds of tens eV in the case of light irradiation, irradiation of energy of several keV to hundreds of keV in the case of electron beams. Is irradiated with energy of several keV to several hundred keV, and in the case of X-rays, energy of several hundred keV to several MeV is irradiated. Thus, leakage current can be reduced when used as wiring.

  Therefore, as shown in FIG. 3B, the semiconductor device 2 of the present invention includes a source electrode 16 and a drain electrode which are conductive regions on at least a part of a thin film 15 in which metal nanoparticles are bonded via an insulating molecule. The source electrode 16 and the drain electrode 17 are formed by irradiating the thin film 15 with energy rays so that the bonds of the insulating molecules are released, and the metal nanoparticles 14 are melted and bonded. It has been made.

  In the semiconductor device 2 and the manufacturing method thereof, the source electrode 16 and the drain electrode 17 having a nanoscale width and gap can be formed at intended positions with good controllability. The energy beam E used here, such as an electron beam, a focused ion beam, and an X-ray, has a very high controllability of, for example, several nanometers to several tens of nanometers. The electrode can be formed with very high accuracy. Therefore, the wiring area can be reduced, which is advantageous for high integration.

  In the manufacturing method described above, since the lithography technique is not used, the electrode manufacturing process can be greatly reduced. In addition, it is a simple process that does not require patterning of metal nanoparticles.

  Further, when the metal nanoparticle thin film 15 is formed, the metal nanoparticle 14 is bonded by an insulating organic molecule, thereby reducing a leakage current after the source electrode 16 and the drain electrode 17 are formed. it can.

  Next, an embodiment (third example) according to a semiconductor device and a method for manufacturing the semiconductor device of the present invention will be described with reference to a schematic cross-sectional view of FIG. FIG. 4 shows, as an example, an electrode having a nanoscale line width and a nanoscale gap for molecular wiring.

As shown in FIG. 4A, a substrate 10 having an insulating film 11 on the front surface and a gate electrode 12 formed on the back surface is formed. When a silicon substrate is used as the substrate 10, for example, a silicon oxide film (SiO ₂ ), silicon nitride (Si ₃ N ₄ ), aluminum oxide (Al ₂ O ₃ ), or the like can be used as the insulating film 11. The silicon oxide film can be formed by, for example, a thermal oxidation method. The silicon nitride film can be formed by, for example, a CVD method. The aluminum oxide film can be formed by, for example, an anodic oxidation method. The substrate 10 may be a resin substrate such as a glass substrate, flexible polyethylene terephthalate (PET), polycarbonate (PC), polyethersulfone (PES). In the case of such a resin substrate, the insulating film 11 is formed by spin coating, for example, a polyvinylphenol (PVP) polymer insulating film.

  The gate electrode 12 formed on the back surface of the substrate 10 is formed by evaporating a metal such as gold or platinum by an electron beam (EB) evaporation method or the like.

  Next, a thin film 15 made of metal nanoparticles 14 whose surface is protected by insulating organic molecules is formed on the surface of the substrate 10. Examples of the production method include a coating method, a solution dipping method, a spin coating method, a Langmuir-Blodget (LB) method, an ink jet method, a screen printing method, a spray method, a dip coating method, and a mold transfer method.

  Next, as shown in FIG. 4B, an energy beam E is irradiated to the position where the electrode pair on the thin film 15 is to be produced. As the energy beam E, an electron beam, a focused ion beam, an X-ray, or the like can be used, which breaks the bond between the insulating organic molecules of the metal nanoparticles 14 of the thin film 15 and melts the metal nanoparticles 14. Combine.

  As a result, the electrode 18 and the electrode 19 are formed at the position irradiated with the energy beam E of the thin film 15. In the case of the focused ion beam, the energy beam irradiation is, for example, irradiation with light of several meV to hundreds of tens eV in the case of light irradiation, irradiation of energy of several keV to hundreds of keV in the case of electron beams. Is irradiated with energy of several keV to several hundred keV, and in the case of X-rays, energy of several hundred keV to several MeV is irradiated.

  Next, as shown in FIG. 4 (3), a molecular wiring 20 is disposed between the electrodes 18 and 19. The molecular wiring 20 is, for example, a conductive polymer, a semiconductor organic molecule, a functional molecule, or the like, and a molecule having a functional group that is easily bonded to metal nanoparticles. Examples of the functional group that easily binds to the metal nanoparticles include a thiol group, an amino group, and a carboxyl group. Examples of the conductive polymer include polyacetylene-based molecules and polypyrrole-based molecules. Examples of the semiconductor organic molecule include porphyrin-based molecules, polyphenyl-based molecules, and polyacene-based molecules. Examples of the functional molecule include a photochromic molecule and a porphyrin derivative molecule.

  Therefore, as shown in FIG. 4 (3), the semiconductor device 3 of the present invention has electrodes 18 and 19 that are conductive regions on at least a part of the thin film 15 in which metal nanoparticles are bonded via insulating molecules. The electrodes 18 and 19 are formed by irradiating the thin film 15 with energy rays, so that the bonds of the insulating molecules are released, and the metal nanoparticles 14 are melted and bonded. is there. A molecular wiring 20 is formed between the electrode 18 and the electrode 19. Therefore, the source electrode and the drain electrode are constituted by the electrode 18 and the electrode 19, and the channel layer is constituted by the molecular wiring 20, whereby a transistor is constituted.

  In the semiconductor device 3 and the manufacturing method thereof, the electrodes 18 and 19 having a nanoscale width and gap can be formed at intended positions with good controllability. The energy beam E used here, such as an electron beam, a focused ion beam, and an X-ray, has a very high controllability of, for example, several nanometers to several tens of nanometers. The electrode can be formed with very high accuracy. Therefore, the wiring area can be reduced, which is advantageous for high integration.

  In the manufacturing method described above, since the lithography technique is not used, the electrode manufacturing process can be greatly reduced. In addition, it is a simple process that does not require patterning of metal nanoparticles.

Next, an embodiment (fourth example) according to the semiconductor device and the method for manufacturing the semiconductor device of the present invention will be described with reference to the schematic sectional view of FIG. FIG. 5 shows isolation as an example.
Show about.

  As shown in FIG. 5A, a substrate 10 having a source electrode 21 and a drain electrode 22 formed on the front surface with an insulating film 11 interposed therebetween and a gate electrode 12 formed on the back surface is formed.

When a silicon substrate is used as the substrate 10, for example, a silicon oxide film (SiO ₂ ), silicon nitride (Si ₃ N ₄ ), aluminum oxide (Al ₂ O ₃ ), or the like can be used as the insulating film 11. The silicon oxide film can be formed by, for example, a thermal oxidation method. The silicon nitride film can be formed by, for example, a CVD method. The aluminum oxide film can be formed by, for example, an anodic oxidation method. The substrate 10 may be a resin substrate such as a glass substrate, flexible polyethylene terephthalate (PET), polycarbonate (PC), polyethersulfone (PES). In the case of such a resin substrate, the insulating film 11 is formed by spin coating, for example, a polyvinylphenol (PVP) polymer insulating film.

  The source electrode 21 and the drain electrode 22 are formed, for example, by depositing metal by an electron beam (EB) deposition method or the like. The gate electrode 12 formed on the back surface of the substrate 10 is formed by evaporating a metal such as gold or platinum by an electron beam (EB) evaporation method or the like.

  Next, a thin film 15 made of metal nanoparticles 14 whose surface is protected by insulating organic molecules is formed on the surface of the substrate 10. Examples of the production method include a coating method, a solution dipping method, a spin coating method, a Langmuir-Blodget (LB) method, an ink jet method, a screen printing method, a spray method, a dip coating method, and a mold transfer method.

  Next, as shown in FIG. 5 (2), the molecular wiring 20 is disposed between the source electrode 21 and the drain electrode 22, and the metal nanoparticles are bonded to each other. The molecular wiring 20 is, for example, a conductive polymer, a semiconductor organic molecule, a functional molecule, or the like, and a molecule having a functional group that is easily bonded to metal nanoparticles. Examples of the functional group that easily binds to the metal nanoparticles include a thiol group, an amino group, and a carboxyl group. Examples of the conductive polymer include polyacetylene-based molecules and polypyrrole-based molecules. Examples of the semiconductor organic molecule include porphyrin-based molecules, polyphenyl-based molecules, and polyacene-based molecules. Examples of the functional molecule include a photochromic molecule and a porphyrin derivative molecule.

  A current easily flows between the metal nanoparticles bonded by molecules in the molecular wiring 20. Here, in order to isolate each source electrode 21 and the drain electrode 22, the energy ray E is irradiated. As this energy beam E, for example, light, electron beam, focused ion beam, X-ray or the like can be used. As a result of the irradiation with the energy rays, the binding molecules are unbound locally and an insulating region (not shown) is formed.

  Further, after the thin film 15 is formed, a region having higher conductivity than the insulating region is formed by bonding to a part of the thin film 15 with another conductive molecule having higher conductivity than the conductive molecule. Is done. As a result, leakage current can be reduced when the conductive path is used as wiring.

1 is a schematic cross-sectional view showing an embodiment (first embodiment) according to a semiconductor device and a method for manufacturing the semiconductor device of the present invention. 1 is a schematic configuration perspective view showing an embodiment (first example) according to a semiconductor device and a method for manufacturing the semiconductor device of the present invention. It is schematic structure sectional drawing which showed one Embodiment (2nd Example) which concerns on the semiconductor device of this invention, and the manufacturing method of a semiconductor device. It is schematic structure sectional drawing which showed one Embodiment (3rd Example) which concerns on the semiconductor device of this invention, and the manufacturing method of a semiconductor device. It is schematic structure sectional drawing which showed one Embodiment (4th Example) which concerns on the semiconductor device of this invention, and the manufacturing method of a semiconductor device.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Semiconductor device, 14 ... Metal nanoparticle, 15 ... Thin film, E ... Energy beam

Claims (21)

A semiconductor device having a conductive region in at least a part of a thin film,
The conductive region is obtained by irradiating an energy ray to the thin film in which metal nanoparticles are bonded via insulating molecules, and the bonding of the insulating molecules is released. A semiconductor device characterized by being melted and bonded. The insulating molecule is substituted with a conductive molecule, a semiconductor organic molecule, or a functional molecule having a functional group that easily binds to the metal nanoparticles before the energy rays are irradiated. 1. The semiconductor device according to 1. The semiconductor device according to claim 2, wherein the functional group that easily binds to the metal nanoparticle includes a thiol group, an amino group, or a carboxyl group. The semiconductor device according to claim 2, wherein the conductive polymer is made of a polyacetylene molecule or a polypyrrole molecule. The semiconductor device according to claim 2, wherein the semiconductor organic molecule is a porphyrin-based molecule, a polyphenyl-based molecule, or a polyacene-based molecule. The semiconductor device according to claim 2, wherein the functional molecule is a photochromic molecule or a porphyrin derivative molecule. In another part of the thin film, another insulating molecule having an insulating property higher than that of the insulating molecule is bonded, and a region having lower conductivity than the conductive region is formed. The semiconductor device according to claim 1. A semiconductor device having an insulating region in at least a part of a thin film,
The insulating region is one in which the conductive molecule is destroyed by irradiating the thin film in which metal nanoparticles are bonded via a conductive molecule with energy rays, or with the conductive molecule. A semiconductor device characterized in that the coupling is broken. A region having a higher conductivity than the insulating region is formed by bonding a part of the thin film with a conductive molecule having a conductivity higher than that of the conductive molecule. The semiconductor device according to claim 8. A method of manufacturing a semiconductor device having a conductive region in at least a part of a thin film,
The conductive region;
The semiconductor is formed by irradiating an energy beam to a thin film in which metal nanoparticles are bonded through insulating molecules to break the bonding of the insulating molecules and melt and bond the metal nanoparticles. Device manufacturing method. The method of manufacturing a semiconductor device according to claim 10, wherein a light beam, an X-ray, an electron beam, or a focused ion beam is used as the energy beam. The method for manufacturing a semiconductor device according to claim 10, wherein when the insulating molecule is a single molecule or an oligomer molecule, a light beam or an electron beam is used as the energy beam. The irradiation with the energy beam is performed after the insulating molecule is replaced with a conductive molecule, a semiconductor organic molecule, or a functional molecule having a functional group that easily binds to the metal nanoparticles. The manufacturing method of the semiconductor device of description. The method for manufacturing a semiconductor device according to claim 13, wherein a thiol group, an amino group, or a carboxyl group is used as the functional group that is easily bonded to the metal nanoparticles. The method for manufacturing a semiconductor device according to claim 13, wherein a polyacetylene molecule or a polypyrrole molecule is used for the conductive polymer. The method of manufacturing a semiconductor device according to claim 13, wherein a porphyrin-based molecule, a polyphenyl-based molecule, or a polyacene-based molecule is used as the semiconductor organic molecule. The method for manufacturing a semiconductor device according to claim 13, wherein a photochromic molecule or a porphyrin derivative molecule is used as the functional molecule. After forming the thin film, a region having a lower conductivity than the conductive region is formed by bonding to a part of the thin film with an insulating molecule having an insulating property higher than that of the insulating molecule. The method of manufacturing a semiconductor device according to claim 10. A method of manufacturing a semiconductor device having an insulating region in at least a part of a thin film,
The insulating region;
A semiconductor device formed by irradiating an energy beam to a thin film in which metal nanoparticles are bonded via a conductive molecule to break the conductive molecule or break the bond with the conductive molecule Manufacturing method. The method of manufacturing a semiconductor device according to claim 19, wherein a light beam, an X-ray, an electron beam, or a focused ion beam is used as the energy beam. After forming the thin film, a region having higher conductivity than the insulating region is formed by bonding to a part of the thin film with a conductive molecule having higher conductivity than the conductive molecule. 20. The method of manufacturing a semiconductor device according to claim 19, wherein

Images