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JP2007009255A - Film deposition device and film deposition method - Google Patents

Film deposition device and film deposition method Download PDF

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JP2007009255A
JP2007009255A JP2005189656A JP2005189656A JP2007009255A JP 2007009255 A JP2007009255 A JP 2007009255A JP 2005189656 A JP2005189656 A JP 2005189656A JP 2005189656 A JP2005189656 A JP 2005189656A JP 2007009255 A JP2007009255 A JP 2007009255A
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base material
substrate
film
holder
film deposition
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Kiyoshi Akagi
清 赤木
Keiichi Aoki
圭一 青木
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Konica Minolta Inc
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Konica Minolta Inc
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a film deposition device with which the temperature of a substrate can be easily controlled and a deposited film product having high performance and high quality can be obtained by holding the substrate in such a manner that the deformation of the substrate is suppressed to be small, and to provide a film deposition method. <P>SOLUTION: In the film deposition device which has a vacuum chamber, and a substrate holder for holding the substrate and a vaporization source in the chamber and which deposits a film on the surface of the substrate, the substrate holder has: a surface which opposes to the vaporization source and transmits the heat from a heat source to the substrate in order to heat the substrate to a prescribed temperature while being brought into contact with the rear surface of the substrate; and a tensile force-imparting holding means for imparting a tensile force to the substrate in the direction orthogonal to the thickness direction of the substrate. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

真空中にて原料を蒸発させ、蒸発した原料を基材に堆積させることで膜堆積品を得る膜堆積装置および膜堆積方法に関する。 The present invention relates to a film deposition apparatus and a film deposition method for obtaining a film deposit by evaporating a raw material in a vacuum and depositing the evaporated raw material on a substrate.

従来、基材に原料膜を堆積させる方法としては(真空)蒸着法、スパッタ法及びCVD法等の気相堆積法による膜堆積方法が広く知られている。ここで、基材を保持する基材ホルダは様々な形態が存在するが、一般的には基材は原料膜の堆積中に基材ホルダの所定の位置に固定されていれば良い。   Conventionally, as a method for depositing a raw material film on a substrate, a film deposition method by a vapor deposition method such as a (vacuum) vapor deposition method, a sputtering method, and a CVD method is widely known. Here, there are various forms of the substrate holder for holding the substrate. Generally, the substrate only needs to be fixed at a predetermined position of the substrate holder during deposition of the raw material film.

しかし、実際は、基材の温度が蒸発源からの輻射熱や蒸発蒸気の顕熱等の熱が加わることで、基材と基材ホルダは、それぞれの熱膨張による変形が生じることで微視的には固定されず互いに動いている関係となる。また、基材と基材ホルダとが固定されることによる拘束力から、内部応力や歪みが生じ、場合によっては、一般的に基材ホルダより脆弱な基材が割れる等の破壊に至ることがある。   However, in reality, the base material and the base material holder are microscopically deformed due to their thermal expansion due to the heat of the base material, such as radiant heat from the evaporation source and sensible heat of the evaporated steam. Are not fixed and are moving with each other. Moreover, internal stress and distortion arise from the restraining force by fixing a base material and a base material holder, and it may lead to destruction, such as a base material generally cracking weaker than a base material holder depending on the case. is there.

また、基材を基材ホルダに固定する場合、基材の面積が大きく、これに対してその厚さが薄い場合、基材ホルダで基材の周辺部を保持すると、基材の自重でもって、例えばその中央部が下に撓むことがある。この状態で基材に原料膜を堆積させ、その後、基材を平板形状で使用しようとすると、原料膜に応力が生じることで、原料膜の特性の変化や割れが生じることがある。   Also, when fixing the base material to the base material holder, if the area of the base material is large and the thickness is thin, if the peripheral part of the base material is held by the base material holder, the weight of the base material For example, the central portion may bend downward. If the raw material film is deposited on the base material in this state and then the base material is used in a flat plate shape, stress may be generated in the raw material film, which may cause a change in the characteristics of the raw material film or a crack.

一方で、基材に蒸発源からの輻射熱や蒸発蒸気の顕熱等の熱が加わることで、基材の温度が上昇し、堆積させている原料膜の性能が変化することがある。   On the other hand, when heat such as radiant heat from an evaporation source or sensible heat of evaporation vapor is applied to the base material, the temperature of the base material rises, and the performance of the deposited raw material film may change.

この様な原料膜の堆積が行われる例としては、例えば、放射線画像記録再生システムに使用される記録媒体である、蓄積性蛍光体パネルの製造がある。   As an example in which such a raw material film is deposited, for example, there is production of a stimulable phosphor panel which is a recording medium used in a radiation image recording / reproducing system.

放射線画像記録再生システムは、X線等の放射線を照射するとこの放射線エネルギの一部を蓄積し、その後、可視光等の励起光を照射すると蓄積された放射線エネルギーに応じて輝尽発光を示す蓄積性蛍光体(輝尽性蛍光体)を利用して、人体等の被写体の放射線像を蓄積性蛍光体層に一旦潜像として記録し、この蓄積性蛍光体層にレーザ光等の励起光を照射して輝尽発光光を生じせしめ、この輝尽発光光を光電的に検出して被写体の放射線像を示す画像信号を取得する放射線画像記録装置および放射線画像読取装置等からなるシステムとして知られている。   The radiation image recording / reproducing system accumulates a part of this radiation energy when irradiated with radiation such as X-rays, and then stores stimulated luminescence according to the accumulated radiation energy when irradiated with excitation light such as visible light. Using a fluorescent phosphor (stimulable phosphor), a radiation image of a subject such as a human body is temporarily recorded as a latent image on the stimulable phosphor layer, and excitation light such as laser light is applied to the stimulable phosphor layer. It is known as a system comprising a radiation image recording device and a radiation image reading device that irradiates and generates stimulated emission light and photoelectrically detects the stimulated emission light to acquire an image signal indicating a radiation image of a subject. ing.

この蓄積性蛍光体パネルには、放射線像を高い解像力で記録再生したいという要求がある一方で、蓄積性蛍光体を密度高く充填した蓄積性蛍光体層は放射線像を高い解像力で記録再生できることが知られている。   While this stimulable phosphor panel has a demand to record and reproduce radiation images with high resolution, the stimulable phosphor layer filled with the stimulable phosphor can record and reproduce radiation images with high resolution. Are known.

一般に蓄積性蛍光体パネルの作製に使用される基材は基材面の面積が大きく(例えば基材の大きさが300mm×300mm以上)、これに対して基材の厚みが薄い(例えば基材の厚みが2mm程度)ので、この蓄積性蛍光体パネルが蒸着装置内に基材の周縁部を介して保持されると、基材の自重によりこの基材の中央部が下方に撓んでしまう。このまま蒸着が施されて基材上に蓄積性蛍光体層が堆積されると、この撓んだ基材を所定の平板形状に戻したときに、蓄積性蛍光体層と基材との間にせん断応力が生じて蓄積性蛍光体層が剥離したり、蓄積性蛍光体層内に生じた内部応力によって蓄積性蛍光体層にひび割れが生じることがある。特に、この蓄積性蛍光体層の厚みは通常の厚み(例えば厚さ数μm)より厚く(例えば厚さ500μm)堆積されるので、上記撓んだ形状を平板形状に戻すときに通常の層厚で堆積された蒸着層に比してより大きなせん断応力や内部応力が発生する。   In general, a base material used for producing a stimulable phosphor panel has a large surface area (for example, the size of the base material is 300 mm × 300 mm or more), and the thickness of the base material is thin (for example, the base material). Therefore, when the stimulable phosphor panel is held in the vapor deposition apparatus via the peripheral portion of the base material, the central portion of the base material bends downward due to the weight of the base material. When the stimulable phosphor layer is deposited on the base material as it is, when the bent base material is returned to a predetermined flat plate shape, it is between the stimulable phosphor layer and the base material. The storage phosphor layer may be peeled off due to shear stress, or the storage phosphor layer may be cracked by internal stress generated in the storage phosphor layer. In particular, since the stimulable phosphor layer is deposited to have a thickness (for example, 500 μm) thicker than a normal thickness (for example, a thickness of several μm), a normal layer thickness is used when returning the bent shape to a flat plate shape. Larger shear stress and internal stress are generated as compared with the deposited layer deposited in (1).

なお、上記課題は、基材への蒸着により蓄積性蛍光体層を堆積する場合に限らず、一般に考慮しておかねばならないものである。   Note that the above-mentioned problem is not limited to the case where the stimulable phosphor layer is deposited by vapor deposition on the base material, but must be generally considered.

これらの課題に対して次のような対応方法が開示されている。   The following methods for dealing with these problems are disclosed.

(1)静電吸着させる方法(例えば、特許文献1)。
基材を基材ホルダに静電力により吸着させ、基材自体の変形を防ぐことができる。
(1) A method of electrostatic adsorption (for example, Patent Document 1).
The base material can be adsorbed to the base material holder by an electrostatic force, and deformation of the base material itself can be prevented.

(2)磁気吸引力を使用した方法(例えば、特許文献2)。
基材を基材ホルダに磁気吸引力により吸着させ、基材自体の変形を防ぐことができる。
(2) A method using magnetic attraction (for example, Patent Document 2).
The base material can be adsorbed to the base material holder by a magnetic attraction force, and deformation of the base material itself can be prevented.

(3)基材に押圧を加えて土台に沿わせる方法(例えば、特許文献3)。
基材は、基材の両端を保持部材により保持され、この保持部材を互いに近づける様にして基材に押圧を加え、重力と反対側に撓ませる。そして、基材の上に設けられている土台の基材側の面を下に凹形状として、この凹形状に基材を沿わしている。
(3) A method of applying pressure to the base material so as to follow the base (for example, Patent Document 3).
The base material is held at both ends of the base material by holding members, and presses the base material so that the holding members come close to each other, and bends to the opposite side of gravity. And the base material side surface of the base provided on the base material has a concave shape downward, and the base material is aligned with this concave shape.

(4)基材に張力を加えて自重による撓み量を軽減する方法(例えば、特許文献3)。基材は、基材の両端を保持部材により保持され、この保持部材を互いに離れる様に基材に張力を加えることで、基材の自重により下に凸となる形状の撓み量を軽減させている。
特開2003−344592号公報 特開2004−18938号公報 特開2004−37234号公報
(4) A method of reducing the amount of bending due to its own weight by applying tension to the substrate (for example, Patent Document 3). The base material is held at both ends of the base material by holding members, and by applying tension to the base material so that the holding members are separated from each other, the amount of bending of the convex shape due to the weight of the base material is reduced. Yes.
Japanese Patent Laid-Open No. 2003-344592 JP 2004-18938 A JP 2004-37234 A

しかしながら、上記(1)に記載の方法には次のような課題がある。まず、静電力による吸着を行うため、基材は誘電体で分極を生じさせることが必要である。従って、使用する基材に制限がある。また、分極を生じさせるためには、3〜10kVの高電圧を必要とする。例えば、基材ホルダ内に対抗した電極を設け、この対の電極に先の高電圧を印可する必要がある。   However, the method described in (1) has the following problems. First, in order to perform adsorption by electrostatic force, it is necessary that the base material is polarized by a dielectric. Therefore, there are limitations on the base material used. Further, in order to cause polarization, a high voltage of 3 to 10 kV is required. For example, it is necessary to provide a counter electrode in the substrate holder and apply the previous high voltage to the pair of electrodes.

一般に基材ホルダは、原料膜を堆積させる時に、膜を均一にすることを目的として堆積する基材面の面内方向に回転させている。従って、高電圧を印可した状態で基材ホルダを回転させるためにはスリップリング等の電圧伝達手段が必要となる。従って、吸引のための機構が大掛かりなものとなり設備投資等の面で非常なコストアップの原因となる。   In general, when depositing a raw material film, the base material holder is rotated in the in-plane direction of the base material surface to be deposited for the purpose of making the film uniform. Therefore, a voltage transmission means such as a slip ring is required to rotate the substrate holder in a state where a high voltage is applied. Therefore, the suction mechanism becomes large and causes a great increase in cost in terms of equipment investment.

また、基材ホルダと基材との材質が異なる場合、それらの熱膨張係数の差からそれぞれの変形の相違が発生し、吸引力が変化したり、吸引により基材ホルダと基材とが密着してることから基材に傷を生じたりすることが十分予測できる。   In addition, when the material of the base material holder and the base material are different, a difference in deformation occurs due to the difference in thermal expansion coefficient between them, and the suction force changes or the base material holder and the base material are brought into close contact by suction. Therefore, it can be sufficiently predicted that the substrate will be damaged.

上記(2)に記載の方法には、上記の静電力の換わりに磁気吸引力を用いている。従って、使用する基材に制限がある。基材が、例えばガラスの場合、基材の基材ホルダの取り付け面側に、例えば磁性体を塗布する必要がある。また、基材ホルダには、磁気吸引力を発生させるための、例えば電磁石等を設ける必要がある。従って、上記の静電力を用いる場合と同様に吸引のための機構が大掛かりなものとなり設備投資等の面で非常なコストアップの原因となる。また、傷の発生も上記の静電力の場合と同様である。   In the method described in (2) above, a magnetic attractive force is used instead of the electrostatic force. Therefore, there are limitations on the base material used. When the base material is glass, for example, it is necessary to apply, for example, a magnetic material to the base material holder mounting surface side of the base material. Moreover, it is necessary to provide the base material holder with, for example, an electromagnet for generating a magnetic attractive force. Therefore, as in the case of using the electrostatic force described above, the mechanism for suction becomes large and causes a great increase in cost in terms of equipment investment and the like. Further, the occurrence of scratches is the same as in the case of the electrostatic force.

さらに、上記(3)に記載の方法では、次のような課題がある。一つは、基材を両端に設けた保持機構により保持し、それを互いに近づける様に押圧することで基材を重力と反対側に押しあげ、下に凹形状を持つ土台に押しつけている。この凹形状の作製は精度的に難度が高いと考えられるで膜堆積装置のコストアップの要因となることが十分予想される。また、基材の両端を押圧して押し上げるための基材の両端に設けてある基材の保持機構において、基材設定後に自由に動くことができるのは回動機構部のみである。従って、基材と土台との熱膨張量に差があると、基材と土台との凹形状のずれが大きくなりその結果として、基材と密着状態を維持できなくなったり、また部分的に応力が高くなることが十分予想できる。従って、土台を介した基材の温度制御を基材全面に対して均一に行うことが困難になり、また基材の変形やそれに伴う傷が発生することになる。   Furthermore, the method described in (3) has the following problems. One is to hold the base material by holding mechanisms provided at both ends, and press the base material so as to be close to each other to push the base material to the opposite side of gravity and press it against a base having a concave shape below. The production of this concave shape is considered to be highly difficult in terms of accuracy, and is expected to be a factor in increasing the cost of the film deposition apparatus. Further, in the base material holding mechanism provided at both ends of the base material for pressing and pushing up both ends of the base material, only the rotation mechanism portion can freely move after the base material is set. Therefore, if there is a difference in the amount of thermal expansion between the base material and the base, the deviation of the concave shape between the base material and the base becomes large, and as a result, it becomes impossible to maintain a close contact state with the base material, or a partial stress Can be expected to be high. Therefore, it becomes difficult to uniformly control the temperature of the base material through the base over the entire surface of the base material, and deformation of the base material and damages associated therewith occur.

上記(4)の記載の方法では、基材の撓み量は軽減されるものの、膜の堆積時に基材の温度を所定の温度にする方法に関しての開示がされてない。   In the method described in (4) above, although the amount of bending of the substrate is reduced, there is no disclosure regarding a method of setting the temperature of the substrate to a predetermined temperature during film deposition.

本発明は上記の事情に鑑みて成されたものであり、その目的は、基材の温度制御が容易にでき、かつ基材の変形を小さく抑えて基材を保持することで堆積膜の性能や品質の高い堆積膜製品を得ることができる膜堆積装置及び膜堆積方法を提供することである。   The present invention has been made in view of the above circumstances, and its purpose is to easily control the temperature of the base material, and to reduce the deformation of the base material to keep the base material small, thereby maintaining the performance of the deposited film. Another object of the present invention is to provide a film deposition apparatus and a film deposition method capable of obtaining a deposited film product with high quality.

上記の課題は、以下の構成により解決される。   Said subject is solved by the following structures.

(請求項1)
真空チャンバと、前記真空チャンバ内に基材を保持する基材ホルダと蒸発源とを備え、前記基材の表面に膜を堆積する膜堆積装置において、
前記基材ホルダは、前記基材の裏面と接して該基材を所定の温度にする熱源からの熱を伝達する前記蒸発源と対向する面と、
前記基材に対し該基材の厚み方向と直交する方向に張力を付与する張力付与保持手段とを有することを特徴とする膜堆積装置。
(Claim 1)
In a film deposition apparatus comprising a vacuum chamber, a substrate holder for holding the substrate in the vacuum chamber, and an evaporation source, and depositing a film on the surface of the substrate,
The base material holder is in contact with the back surface of the base material and a surface facing the evaporation source that transmits heat from a heat source that brings the base material to a predetermined temperature;
A film deposition apparatus comprising tension applying and holding means for applying tension to the substrate in a direction perpendicular to the thickness direction of the substrate.

(請求項2)
前記蒸発源と対向する面は凸形状であることを特徴とする請求項1に記載の膜堆積装置。
(Claim 2)
The film deposition apparatus according to claim 1, wherein a surface facing the evaporation source has a convex shape.

(請求項3)
請求項1または2に記載の膜堆積装置を用いて基材の膜を堆積することを特徴とする膜堆積方法。
(Claim 3)
A film deposition method comprising depositing a film of a substrate using the film deposition apparatus according to claim 1.

請求項1に記載の発明によれば、膜堆積装置における基材ホルダは、基材の裏面と接して基材を所定の温度にする熱源からの熱を伝達する蒸発源と対向する面と、基材に対し基材の厚み方向と直交する方向に張力を付与する張力付与保持手段とを有している。   According to the first aspect of the present invention, the substrate holder in the film deposition apparatus is in contact with the back surface of the substrate and faces the evaporation source that transmits heat from the heat source that brings the substrate to a predetermined temperature. Tension applying and holding means for applying tension in a direction perpendicular to the thickness direction of the base material to the base material.

これらにより、基材の材料に限定されることなく基材の膜堆積面は自重による撓みが軽減され、より平面に近くなる。また、基材の温度変化により生じる伸縮や変形による応力発生は、張力付与保持手段により吸収される。さらに、基材は張力付与保持手段で基材ホルダに保持されているため、基材と基材ホルダとが互いに拘束する力は弱いため、互いが熱膨張のための変形等で擦れ合うことで生じる傷は少なく良好な範囲内に収まる。また、基材ホルダの蒸発源と対向する面と基材の裏面とが接していることで、基材の温度の制御が効果的に可能となる。   Accordingly, the film deposition surface of the base material is not limited to the material of the base material, and the deflection due to its own weight is reduced, and the surface becomes closer to a flat surface. Moreover, the generation of stress due to expansion and contraction caused by temperature change of the substrate is absorbed by the tension applying and holding means. Furthermore, since the base material is held by the base material holder by the tension applying and holding means, the force that restrains the base material and the base material holder from each other is weak, and therefore, the base material and the base material holder are rubbed with each other due to deformation for thermal expansion. There are few scratches and it fits in a good range. In addition, since the surface of the substrate holder facing the evaporation source is in contact with the back surface of the substrate, the temperature of the substrate can be effectively controlled.

従って、基材の傷の発生が少なく均一な膜が堆積されることで堆積膜の性能や品質が高い堆積膜製品を得ることができる膜堆積装置を提供することができる。   Accordingly, it is possible to provide a film deposition apparatus capable of obtaining a deposited film product having a high performance and quality of the deposited film by depositing a uniform film with few scratches on the substrate.

請求項2に記載の発明によれば、膜堆積装置における基板ホルダは、蒸発源と対向する面は凸形状としている。従って、上述の効果に加えて、さらに次のような効果がある。   According to the second aspect of the present invention, the substrate holder in the film deposition apparatus has a convex surface on the surface facing the evaporation source. Therefore, in addition to the above-described effects, the following effects are further obtained.

基材ホルダが基材と接する面形状は、基材の両端を固定して保持した時に撓む下に凸形状と同様にしている。こうすることで、基材に加える張力を、基材をなるべく平板にしようとしている張力と比較して弱い力でもって、この基材ホルダが有している凸形状に基材を沿わせることができる。従って、基材の温度の制御がより効果的に可能となる。   The shape of the surface where the substrate holder comes into contact with the substrate is the same as the convex shape that is bent when both ends of the substrate are fixed and held. By doing this, the tension applied to the base material can be made to follow the convex shape of the base material holder with a weak force compared to the tension that is going to make the base material as flat as possible. it can. Therefore, the temperature of the substrate can be controlled more effectively.

また、上述と同様に基材と基材ホルダとは接しているものの、基材と基材ホルダとの互いの拘束力は弱く、更に基材に付与されている張力が上記の通り比較的弱いことから、基材と基材ホルダとが互いに擦れ合うことで生じる傷はほとんど発生しない。   Moreover, although the base material and the base material holder are in contact as described above, the mutual restraining force between the base material and the base material holder is weak, and the tension applied to the base material is relatively weak as described above. Therefore, scars caused by rubbing the base material and the base material holder hardly occur.

請求項3に記載の発明によれば、上記に述べた膜堆積装置を用いることで堆積膜の性能や品質の高い膜堆積方法を提供することができる。   According to the invention described in claim 3, by using the film deposition apparatus described above, it is possible to provide a film deposition method with high performance and quality of the deposited film.

図1は本発明に係わる実施の形態の一例として膜堆積装置の概略構成を示す図である。図1において、1は真空チャンバ、2は基材、3は後で述べる熱媒体を通液できる中空部を有する基材ホルダ、4は蒸発源、5は排気手段である真空ポンプ、6は熱媒体を設定された温度にして基材ホルダ3に送り出し、基材ホルダ3から帰ってくる熱媒体を回収することを繰り返す温度調整機構、7は大気圧と真空とを隔絶して回転力を伝達する回転導入機構である。   FIG. 1 is a diagram showing a schematic configuration of a film deposition apparatus as an example of an embodiment according to the present invention. In FIG. 1, 1 is a vacuum chamber, 2 is a substrate, 3 is a substrate holder having a hollow part through which a heat medium described later can be passed, 4 is an evaporation source, 5 is a vacuum pump as exhaust means, and 6 is a heat A temperature adjustment mechanism that repeats the recovery of the heat medium returned from the base material holder 3 by sending the medium to the base material holder 3 at a set temperature, and 7 transmits the rotational force by isolating the atmospheric pressure from the vacuum. This is a rotation introducing mechanism.

基材ホルダ3は、基材ホルダベース部3a、基材案内台部3b、基材2を保持し且つ基材2に張力を加える一対の張力付与保持手段である張力付与保持部3cで構成されている。ここで、張力付与保持部3cで保持される基材2は、基材案内台部3bの蒸発源側の面に接する状態となる。   The base material holder 3 includes a base material holder base portion 3a, a base material guide base portion 3b, and a tension applying / holding portion 3c that is a pair of tension applying / holding means that holds the base material 2 and applies tension to the base material 2. ing. Here, the base material 2 held by the tension applying / holding portion 3c comes into contact with the evaporation source side surface of the base material guide base portion 3b.

ここで、基材ホルダ3は、図示されてない動力源により回転導入機構7を介して基材2を回転させることが出来るようにしている。膜堆積装置は、一般に堆積膜を均一にする上で、基材2を回転させる機構を有することが好ましい。   Here, the base material holder 3 can rotate the base material 2 via the rotation introduction mechanism 7 by a power source not shown. In general, the film deposition apparatus preferably has a mechanism for rotating the substrate 2 in order to make the deposited film uniform.

基材ホルダ3は温度調整機構6と接続されている。本実施の形態の例の温度調整機構6は所定の温度になるように温度制御する熱媒体を基材ホルダ3内部の中空部に通液し循環させるものである。よって、基材2は所定の温度となるように制御された熱媒体が通る基材ホルダ3内部の中空部を熱源として、この温度が基材ホルダ3(詳しくは基材ホルダ3を構成している基材ホルダベース部3a及び基材案内台部3b)を介して基材2に伝わることで、蒸発源4からの輻射熱や蒸発蒸気の顕熱による影響を受けることなく、所定の温度となるように制御される。   The substrate holder 3 is connected to the temperature adjustment mechanism 6. The temperature adjustment mechanism 6 of the example of the present embodiment is for circulating a heat medium whose temperature is controlled so as to reach a predetermined temperature through the hollow portion inside the substrate holder 3. Therefore, the temperature of the base material 2 is determined by using the hollow portion inside the base material holder 3 through which the heat medium controlled so as to have a predetermined temperature passes as a heat source. By being transmitted to the base material 2 through the base material holder base portion 3a and the base material guide base portion 3b), the temperature becomes a predetermined temperature without being affected by the radiant heat from the evaporation source 4 or the sensible heat of the evaporated vapor. To be controlled.

尚、温度調整機構6については、本実施の形態の例では熱媒体の循環による方式としたが、特にこれに限定されるものではなくヒーター等を基材ホルダ3に埋め込む方法でもよい。また、基材ホルダ3に熱電対を設け、これにより基材2の温度値を温度制御機構6にフィードバックすることでより精度の高い温度制御をしてもよい。また、所定の温度とは、例えば膜密度の高い堆積膜を基材に作製したい場合は、成膜時にその膜原料や膜状態にに応じて設定する基材の適切な温度のことであり、例えば予め実験等により決めればよく、更に、膜堆積終了後は、基材を取り出しやすい、例えば40℃程度の温度である。   The temperature adjustment mechanism 6 is based on the circulation of the heat medium in the example of the present embodiment, but is not particularly limited to this, and a method of embedding a heater or the like in the substrate holder 3 may be used. Further, a thermocouple may be provided in the base material holder 3, and thereby the temperature value of the base material 2 may be fed back to the temperature control mechanism 6, so that temperature control with higher accuracy may be performed. In addition, the predetermined temperature is, for example, an appropriate temperature of the base material set according to the film raw material and the film state at the time of film formation when it is desired to produce a deposited film having a high film density on the base material. For example, it may be determined in advance by experiments or the like. Further, after the film deposition is completed, the substrate is easily taken out, for example, at a temperature of about 40 ° C.

ここで、本発明に係わる第1の実施の形態の膜堆積装置が有する基材ホルダ3の一例の概略図を図2に示す。この基材ホルダ3は、基材2に対し、基材2の厚み方向と直交する方向(図中矢印Y方向)への張力を与える一対の張力付与保持部3cを備え、この張力付与保持部3cにより基材2に張力を付与し、基材ホルダ3が有する基材案内台部3bの蒸発源4側に有する面38に基材2が接する状態で保持する。   Here, FIG. 2 shows a schematic diagram of an example of the substrate holder 3 included in the film deposition apparatus according to the first embodiment of the present invention. The base material holder 3 includes a pair of tension applying and holding portions 3c that apply tension to the base material 2 in a direction orthogonal to the thickness direction of the base material 2 (the direction of the arrow Y in the drawing). A tension is applied to the base material 2 by 3c, and the base material 2 is held in a state where the base material 2 is in contact with the surface 38 on the evaporation source 4 side of the base material guide stand portion 3b of the base material holder 3.

基材2は、例えば、蓄積性蛍光体が柱状結晶として蒸着される蓄積性蛍光体パネル用の基材であり、基材2の寸法は、概ね300mm×300mm、厚さは2mm程度である。   The substrate 2 is, for example, a substrate for a stimulable phosphor panel on which the stimulable phosphor is deposited as columnar crystals. The substrate 2 has a size of approximately 300 mm × 300 mm and a thickness of approximately 2 mm.

この基材ホルダ3は、さらに、膜堆積装置内に回転導入機構7を介して固定される基材ホルダベース部3aと、基材ホルダベース部3aの下面に有している基材案内台部3bと、基材案内台部3bの両外側に互いに対向して設けてある一対の張力付与保持部3cとで構成されている。   The base material holder 3 further includes a base material holder base portion 3a that is fixed in the film deposition apparatus via the rotation introducing mechanism 7, and a base material guide base portion that is provided on the lower surface of the base material holder base portion 3a. 3b and a pair of tension applying and holding portions 3c provided opposite to each other on both outer sides of the substrate guide base portion 3b.

張力付与保持部3cは、基材2に張力を加えるための伸縮可能な弾性部材、例えばバネ34と、このバネ34の一方の端を基材ホルダベース部3aに固定するために配設される支柱35と、このバネの他方の端を基材2に固定し基材2の両端の周縁部2aをクランプする保持部30とを備えている。   The tension applying / holding portion 3c is arranged to fix an elastic member, such as a spring 34, for applying a tension to the base material 2 and one end of the spring 34 to the base material holder base portion 3a. A support 35 and a holding portion 30 that fixes the other end of the spring to the base material 2 and clamps the peripheral edge portions 2 a at both ends of the base material 2 are provided.

バネ34を固定する支柱35及び保持部30の位置は、基材2を保持している状態で、基材2の周縁部2aでの膜が堆積される面の接線に平行で基材2の厚みの中心を通る線の延長線上とするのが好ましい。   The positions of the support 35 and the holding unit 30 for fixing the spring 34 are parallel to the tangent line of the surface on which the film is deposited on the peripheral edge 2a of the substrate 2 while holding the substrate 2. It is preferable to be on an extension line of a line passing through the center of thickness.

また、上記の保持部30それぞれは、支柱35にバネ34を介して固定される上クランプ板32と、上クランプ板32の雌ネジ部H1に螺合する押しネジ33と、押しネジ33が挿通される孔H2を有する下クランプ板31と、上クランプ板32と下クランプ板31との間に配設され、上クランプ板32に対して下クランプ板31が離れる方向にこの下クランプ板31を付勢するコイルバネ36とを備えている。押しネジ33は下クランプ板31の孔H2および円筒状のコイルバネ36の中央の空洞部を通して上クランプ板32の雌ネジ部H1に螺合され、この押しネジ33の回転により、下クランプ板31がコイルバネ36による付勢力を受けながら上クランプ板32に近づく方向および離れる方向に移動される。   Each of the holding portions 30 is inserted with an upper clamp plate 32 fixed to the support 35 via a spring 34, a push screw 33 screwed into the female screw portion H1 of the upper clamp plate 32, and a push screw 33. The lower clamp plate 31 having the hole H2 is disposed between the upper clamp plate 32 and the lower clamp plate 31, and the lower clamp plate 31 is moved away from the upper clamp plate 32. And a coil spring 36 to be urged. The push screw 33 is screwed into the female screw portion H1 of the upper clamp plate 32 through the hole H2 of the lower clamp plate 31 and the central hollow portion of the cylindrical coil spring 36, and the lower clamp plate 31 is rotated by the rotation of the push screw 33. While receiving the urging force of the coil spring 36, the coil spring 36 is moved toward and away from the upper clamp plate 32.

基材2の基材ホルダ3への取り付けは、以下のように行う。基材2を基材案内台部3bの設定位置で手等で仮に保持した状態で、保持部30の押しネジ33の回転により上クランプ板32と下クランプ板31との間隔を広げた後、保持部30に一方の端を固定されているバネ34を伸ばしながら基材2に近づけ、上クランプ32板と下クランプ板31との間に基材2の周縁部2aを挿入する。そして、押しネジ33の回転によって上クランプ板32と下クランプ板31との間隔を狭めて、基材2の周縁部2aを上クランプ板32と下クランプ板31板との間にクランプする。これを基材2の両周縁部2aで行う。尚、基材2を取り外す場合は、上記の逆の順に行えば良い。   Attachment of the base material 2 to the base material holder 3 is performed as follows. In a state where the base material 2 is temporarily held by hand or the like at the set position of the base material guide stand portion 3b, the interval between the upper clamp plate 32 and the lower clamp plate 31 is increased by the rotation of the push screw 33 of the holding portion 30; The spring 34, which has one end fixed to the holding portion 30, is brought close to the base material 2 while being extended, and the peripheral edge 2 a of the base material 2 is inserted between the upper clamp 32 plate and the lower clamp plate 31. And the space | interval of the upper clamp board 32 and the lower clamp board 31 is narrowed by rotation of the push screw 33, and the peripheral part 2a of the base material 2 is clamped between the upper clamp board 32 and the lower clamp board 31 board. This is performed at both peripheral edges 2a of the substrate 2. In addition, what is necessary is just to perform in the reverse order of said, when removing the base material 2.

上述の通りに基材2を基材ホルダ3に保持させると、基材2は膜堆積装置内に備えられている基材ホルダ3の基材案内台部3bの蒸着源側に向いている面38に接する様に保持され、また、基材2の両周縁部2aの保持部30に固定されているバネ34により基材2には張力が付与されている状態となる。   When the base material 2 is held by the base material holder 3 as described above, the base material 2 is a surface of the base material holder 3 provided in the film deposition apparatus that faces the vapor deposition source side of the base material guide table 3b. The substrate 2 is in a state of being tensioned by the springs 34 that are held in contact with the plate 38 and are fixed to the holding portions 30 of both peripheral edge portions 2a of the substrate 2.

従って、基材2は、自重による蒸発源4側への撓み量が軽減され、平板に近い形状の状態で保持されることとなる。このことから、また、基材ホルダ3が有する基材案内台部3bの蒸着源4側に有する面38は、基材2と接する面であることから平面が好ましい。ここで、バネ34の張力は、基材2が上記の状態となるように、基材2の材質、厚み、大きさ等により適宜決めればよく、以降で述べる本発明に係わる第2の実施の形態においても同様である。   Therefore, the base material 2 is held in a state of a shape close to a flat plate by reducing the amount of bending toward the evaporation source 4 due to its own weight. In view of this, the surface 38 on the vapor deposition source 4 side of the substrate guide base 3b of the substrate holder 3 is preferably a flat surface because it is a surface in contact with the substrate 2. Here, the tension of the spring 34 may be appropriately determined depending on the material, thickness, size, and the like of the base material 2 so that the base material 2 is in the above-described state, and the second embodiment according to the present invention described below will be described. The same applies to the form.

この様にすることで、基材2の温度は、温度調整機構6を稼働させることで基材ホルダ3を介して所望の温度に効率よく設定することができる。   By doing in this way, the temperature of the base material 2 can be efficiently set to a desired temperature via the base material holder 3 by operating the temperature adjusting mechanism 6.

上記の様に基材2を基材ホルダ3に保持した後、真空チャンバ1内の空気を真空ポンプ5により排気する。また、これと平行して温度制御機構6を稼働させて基材2の温度を所望の温度にする。その後、真空チャンバ1内の真空度を所望の値に到達させ、また基材2の温度が所望の温度に達した後、蒸発源4より膜原料を蒸発させて基材2上に膜を堆積する。   After holding the substrate 2 on the substrate holder 3 as described above, the air in the vacuum chamber 1 is exhausted by the vacuum pump 5. In parallel with this, the temperature control mechanism 6 is operated to bring the temperature of the base material 2 to a desired temperature. Thereafter, the degree of vacuum in the vacuum chamber 1 is reached to a desired value, and after the temperature of the substrate 2 reaches the desired temperature, the film material is evaporated from the evaporation source 4 to deposit a film on the substrate 2. To do.

次に、本発明に係わる第2の実施の形態の膜堆積装置が有する基材ホルダ3の一例の概略図を図3に示す。上記で説明した第1の実施の形態の膜堆積装置と本第2の実施に形態の膜堆積装置とで異なるのは、第1の実施の形態の基材ホルダ3を示す図2における面38は平面が好ましいとしていることに対して、本第2の実施に形態の基材ホルダ3を示す図3における面39は、蒸発源4側に向かって凸形状とすることがより好ましいとしていることのみである。これに関して以下に説明する。   Next, FIG. 3 shows a schematic diagram of an example of the substrate holder 3 included in the film deposition apparatus according to the second embodiment of the present invention. The difference between the film deposition apparatus of the first embodiment described above and the film deposition apparatus of the second embodiment is that the surface 38 in FIG. 2 shows the substrate holder 3 of the first embodiment. 3 is preferable to be flat, whereas the surface 39 in FIG. 3 showing the substrate holder 3 of the second embodiment is more preferably convex toward the evaporation source 4 side. Only. This will be described below.

基材2を単にその両端周縁部を保持しただけの場合、基材2の自重により下側に撓みが発生し、この撓み量をW0とする。この撓み量W0の概念を説明する図を図4に示す。図4に示す様に、撓み量W0は、基材2の両周縁部での保持位置40を結んだ線より、基材2が撓むことでこの線より最も離れた位置までの間隔とする。 When the base material 2 is simply held at the peripheral edges at both ends, the base material 2 is bent downward due to its own weight, and the amount of the bending is defined as W 0 . FIG. 4 is a diagram for explaining the concept of the deflection amount W 0 . As shown in FIG. 4, the deflection amount W 0 is the distance from the line connecting the holding positions 40 at both peripheral edges of the base material 2 to the position farthest away from this line as the base material 2 is bent. To do.

第1の実施の形態の膜堆積装置においては、基材2に張力を付与することで撓み量W0を軽減させて、より平板に近い形状にしている。しかし、付与する張力を強くすればするほど基材2の撓み量が軽減される一方で、基材2の柔軟性は低くなっていく。言い換えると、基材2に基材2より硬度が高いものが触れる場合、基材2に傷の発生が懸念される。例えば、基材2の温度調整のため基材案内台部3bの面と基材2とが接していることが傷の発生要因の一つと考えられる。 In the film deposition apparatus according to the first embodiment, the bending amount W 0 is reduced by applying a tension to the base material 2 so as to have a shape closer to a flat plate. However, as the applied tension is increased, the amount of bending of the base material 2 is reduced, while the flexibility of the base material 2 is lowered. In other words, when the substrate 2 touches the substrate 2 having a higher hardness than the substrate 2, there is a concern that the substrate 2 may be damaged. For example, it is considered that the surface of the base material guide base part 3b and the base material 2 are in contact with each other in order to adjust the temperature of the base material 2 as one of the causes of scratches.

そこで、この傷の発生を防ぐためには、張力を弱くすれば良いことになるが、張力を弱めると基材2の自重による撓み量が大きくなり、図2で示す基材案内台部3bの面38より基材2の中央部分が離れてくることになる。よって、膜堆積時の基材2の温度分布において、基材2の中央部分と周辺とでは異なってくる。   Therefore, in order to prevent the occurrence of this scratch, it is only necessary to reduce the tension. However, when the tension is reduced, the amount of bending due to the weight of the base material 2 increases, and the surface of the base material guide base 3b shown in FIG. Thus, the central portion of the substrate 2 is separated from 38. Therefore, in the temperature distribution of the base material 2 at the time of film deposition, the central portion and the periphery of the base material 2 are different.

この対策として、基材案内台部3bの面を図3の面39の様に下に凸形状とすると、上記に述べた基材2の自重による撓み形状に近くなることから、面39の凸形状と基材2に付与する張力を適切にすれば、比較的弱い張力を基材2に付与することで面39の凸形状に基材2を沿わせることができる。   As a countermeasure against this, if the surface of the base material guide base part 3b has a convex shape downward like the surface 39 in FIG. 3, it becomes close to the bent shape due to the weight of the base material 2 described above. If the shape and the tension applied to the base material 2 are appropriate, the base material 2 can be aligned with the convex shape of the surface 39 by applying a relatively weak tension to the base material 2.

従って、基材2の自重で撓むときの撓み量W0より少ない適切な撓み量に対応する凸形状を面39に設け、この凸形状に沿うような張力を基材2に付与することにより、膜の堆積をするときの基材2の撓み量は平板形状で使用する上で問題が発生しない状態にすることが出来、また基材2の温度調節も効果的に行うことが出来、さらに基材2の面39と接する面における傷の発生を防ぐことが出来ることになる。 Accordingly, by providing the surface 39 with a convex shape corresponding to an appropriate amount of deflection smaller than the amount of deflection W 0 when the substrate 2 is bent by its own weight, and applying a tension along the convex shape to the substrate 2. The amount of bending of the base material 2 when depositing the film can be made into a state where no problem occurs when used in a flat plate shape, and the temperature of the base material 2 can be adjusted effectively, The occurrence of scratches on the surface in contact with the surface 39 of the substrate 2 can be prevented.

尚、膜の堆積方法は、本実施の形態では真空蒸着法としているが、これに限定されるものではなくスパッタ法、CDV法等としてもよい。   The film deposition method is a vacuum deposition method in this embodiment, but is not limited to this, and a sputtering method, a CDV method, or the like may be used.

膜堆積装置は、実施の形態の図1で示し説明したものと同等の装置とした。基材2は大きさ300mm×300mmの2mm厚のアルミニウム板を使用した。膜原料には、臭化セシウムを使用した。蒸発源4にはモリブデン製の直方体状容器を使用し、加熱は抵抗加熱方式とした。蒸発源4には膜原料を800g充填した。   The film deposition apparatus was the same as that shown and described in FIG. 1 of the embodiment. The substrate 2 was a 2 mm thick aluminum plate having a size of 300 mm × 300 mm. Cesium bromide was used as the film material. As the evaporation source 4, a rectangular parallelepiped container made of molybdenum was used, and heating was performed by a resistance heating method. The evaporation source 4 was filled with 800 g of film raw material.

基材2を保持した基材ホルダ3については、以下の比較例1、2、実施例1,2で説明する。   The base material holder 3 holding the base material 2 will be described in Comparative Examples 1 and 2 and Examples 1 and 2 below.

真空チャンバ1の排気は真空ポンプ5を使用して行い、到達する真空度が0.1Paになるように調整した。その後、蒸発源4へ通電を開始し蒸発源4の容器内部が800℃になるように通電量を制御しながら基材2への蒸着を実施した。基材2の膜厚が300μmとなったところで膜原料の蒸発を終了させた。なお、蒸着中は温度調整機構5により温度200℃の熱媒体を基材ホルダ3へ循環させた。   The vacuum chamber 1 was evacuated using a vacuum pump 5 and adjusted so that the degree of vacuum reached was 0.1 Pa. Thereafter, energization of the evaporation source 4 was started, and deposition on the base material 2 was performed while controlling the amount of energization so that the inside of the container of the evaporation source 4 was 800 ° C. When the film thickness of the substrate 2 reached 300 μm, the evaporation of the film material was terminated. During vapor deposition, a heat medium having a temperature of 200 ° C. was circulated to the substrate holder 3 by the temperature adjustment mechanism 5.

以下に示す比較例1、2及び実施例1、2は、基材2を保持する基材ホルダ3以外は同じ条件で膜の堆積を行った。   In Comparative Examples 1 and 2 and Examples 1 and 2 shown below, films were deposited under the same conditions except for the base material holder 3 holding the base material 2.

(比較例1)
基材ホルダ3は、図5に示す様に、基材2に接する面50を平面とし、基材保持部材51とこれを基材ホルダに固定するネジ51aとで基材2をその両周縁部2aで保持した。基材保持部材51は基材2を基材ホルダ3とで挟み込むことにより固定する。基材保持部材51は、基材2を押さえる部分とネジ51bが挿通して基材保持部材51を基材ホルダ3に固定する部分とがあり、両部分の厚みの差は基材2の厚み以下としている。
これらを用いて基材2を保持し膜の堆積を行って堆積膜付基材Aを得た。
(Comparative Example 1)
As shown in FIG. 5, the substrate holder 3 has a flat surface 50 in contact with the substrate 2, and the substrate 2 is connected to both peripheral portions by a substrate holding member 51 and a screw 51 a that fixes the substrate 50 to the substrate holder. Held at 2a. The base material holding member 51 is fixed by sandwiching the base material 2 with the base material holder 3. The base material holding member 51 has a part for pressing the base material 2 and a part for inserting the screw 51 b to fix the base material holding member 51 to the base material holder 3. It is as follows.
Using these materials, the substrate 2 was held and the film was deposited to obtain a substrate A with a deposited film.

(比較例2)
基材ホルダ3は、図6に示す様に、基材2に接する面60を重力方向である下に凸形状とした。基材2の基材ホルダ3への固定方法は、比較例1と同じ基材保持部材51とこれを基材ホルダに固定するネジ51aとで基材2をその両周縁部2aで保持した。
これらを用いて基材2を保持し膜の堆積を行って堆積膜付基材Bを得た。
(Comparative Example 2)
As shown in FIG. 6, the base material holder 3 has a surface 60 in contact with the base material 2 that is convex downward in the direction of gravity. The base material 2 was fixed to the base material holder 3 by holding the base material 2 at both peripheral edges 2a with the same base material holding member 51 as in Comparative Example 1 and screws 51a for fixing the same to the base material holder.
Using these materials, the substrate 2 was held and the film was deposited to obtain a substrate B with a deposited film.

(実施例1)
第1の実施の形態で説明した図2に示す基材ホルダ3を使用した。基材ホルダ3の基材2に接する面38は平面とした。
これらを用いて基材2を保持し成膜を行って堆積膜付基材Cを得た。
Example 1
The substrate holder 3 shown in FIG. 2 described in the first embodiment was used. The surface 38 in contact with the base material 2 of the base material holder 3 was a flat surface.
Using these materials, the substrate 2 was held and film formation was performed to obtain a substrate C with a deposited film.

(実施例2)
第2の実施の形態で説明した図3に示す基材ホルダ3を使用した。基材ホルダ3の基材2に接する面39は凸形状とした。
これらを用いて基材2を保持し膜の堆積を行って堆積膜付基材Dを得た。
(Example 2)
The substrate holder 3 shown in FIG. 3 described in the second embodiment was used. The surface 39 in contact with the base material 2 of the base material holder 3 was convex.
Using these, the substrate 2 was held and the film was deposited to obtain a substrate D with a deposited film.

(評価)
こうして作製した堆積膜付基材A、B、C及びDを以下の観点から評価した。
(Evaluation)
The deposited film-coated substrates A, B, C and D thus produced were evaluated from the following viewpoints.

(堆積膜の基材内膜密度)
基材上の堆積膜において中央部と端部の膜密度を計測し、各測定値を下記に示す式(1)当てはめることで得られる値を評価値ESとした。この評価値ESを基準値(0.05)と比較して、評価値ESが基準値未満の場合は○(良好)、評価値ESが基準値以上の場合は×(不良)と標記した。
ES=ABS(MC−ME)/MC (1)
但し、
MC:中央部の膜密度値
ME:端部の膜密度値
(基材裏面観察による傷、変形の有無)
基材2の膜堆積されない面(裏面)の傷の有無及び平面基準台(JIS B7513規格 2級平面度30μm)上に裏面を下にした基材2を載せて基材の変形状態を目視にて観察した。この観察した基材2の状態を以下に示す4種類に分類し、それぞれに対応させた記号◎、○、△、×で示した。
傷あり、変形なし : ◎
傷あり、変形なし : ○
傷なし、変形あり : △
傷あり、変形あり : ×
上記の評価の結果を表1にまとめて示す。
(Inner film density of deposited film)
In the deposited film on the substrate, the film density at the central part and the edge part was measured, and a value obtained by applying each measured value to the following equation (1) was defined as an evaluation value ES. This evaluation value ES was compared with a reference value (0.05), and marked as ◯ (good) when the evaluation value ES was less than the reference value, and x (defect) when the evaluation value ES was equal to or greater than the reference value.
ES = ABS (MC-ME) / MC (1)
However,
MC: film density value at the center ME: film density value at the edge (presence or absence of scratches or deformation due to observation of the back surface of the substrate)
The surface of the base material 2 on which the film is not deposited (the back surface) is checked for scratches, and the base material 2 with the back surface down is placed on a flat reference table (JIS B7513 standard second-order flatness 30 μm) to visually check the deformation state of the base material. And observed. The observed state of the substrate 2 was classified into the following four types, and indicated by symbols 、, ○, Δ, and X corresponding to each of them.
Scratched, no deformation: ◎
Scratched, no deformation: ○
No scratch, deformation: △
Scratched, deformed: ×
The results of the above evaluation are summarized in Table 1.

Figure 2007009255
Figure 2007009255

表1からわかるとおり、本発明に係わる膜堆積装置を使用することで製作した堆積膜製品は膜の均一性が良く、基材2に傷が発生し難く変形がない堆積膜製品が得られることが確認できた。   As can be seen from Table 1, the deposited film product manufactured by using the film deposition apparatus according to the present invention has a good film uniformity, and a deposited film product that does not easily cause scratches on the base material 2 and is not deformed can be obtained. Was confirmed.

本発明に係わる実施例に用いられる膜堆積装置の概略構成の一例を示す図である。It is a figure which shows an example of schematic structure of the film deposition apparatus used for the Example concerning this invention. 本発明に係わる第1の実施の形態の膜堆積装置が有する基材ホルダ3の一例の概略を示す図である。It is a figure which shows the outline of an example of the base-material holder 3 which the film deposition apparatus of 1st Embodiment concerning this invention has. 本発明に係わる第2の実施の形態の膜堆積装置が有する基材ホルダ3の一例の概略を示す図である。It is a figure which shows the outline of an example of the base-material holder 3 which the film deposition apparatus of 2nd Embodiment concerning this invention has. 基材2の自重により下側に発生する撓みの撓み量W0を説明する図である。It is a diagram illustrating a deflection amount W 0 of deflection generated downward by self-weight of the substrate 2. 比較例1で基材2を保持する方法を説明する図である。It is a figure explaining the method to hold | maintain the base material 2 in the comparative example 1. FIG. 比較例2で基材2を保持する方法を説明する図である。It is a figure explaining the method to hold | maintain the base material 2 in the comparative example 2. FIG.

符号の説明Explanation of symbols

1 真空チャンバ
2 基材
3 基材ホルダ
3a 基材ホルダベース部
3b 基材案内台
3c 張力付与保持部
30 保持部
4 蒸発源
5 真空ポンプ
6 温度調整機構
7 回転導入機構
DESCRIPTION OF SYMBOLS 1 Vacuum chamber 2 Base material 3 Base material holder 3a Base material holder base part 3b Base material guide stand 3c Tension provision holding part 30 Holding part 4 Evaporation source 5 Vacuum pump 6 Temperature adjustment mechanism 7 Rotation introduction mechanism

Claims (3)

真空チャンバと、前記真空チャンバ内に基材を保持する基材ホルダと蒸発源とを備え、前記基材の表面に膜を堆積する膜堆積装置において、
前記基材ホルダは、前記基材の裏面と接して該基材を所定の温度にする熱源からの熱を伝達する前記蒸発源と対向する面と、
前記基材に対し該基材の厚み方向と直交する方向に張力を付与する張力付与保持手段とを有することを特徴とする膜堆積装置。
In a film deposition apparatus comprising a vacuum chamber, a substrate holder for holding the substrate in the vacuum chamber, and an evaporation source, and depositing a film on the surface of the substrate,
The base material holder is in contact with the back surface of the base material and a surface facing the evaporation source that transmits heat from a heat source that brings the base material to a predetermined temperature;
A film deposition apparatus comprising tension applying and holding means for applying tension to the substrate in a direction perpendicular to the thickness direction of the substrate.
前記蒸発源と対向する面は凸形状であることを特徴とする請求項1に記載の膜堆積装置。 The film deposition apparatus according to claim 1, wherein a surface facing the evaporation source has a convex shape. 請求項1または2に記載の膜堆積装置を用いて基材の表面に膜を堆積することを特徴とする膜堆積方法。 A film deposition method comprising depositing a film on the surface of a substrate using the film deposition apparatus according to claim 1.
JP2005189656A 2005-06-29 2005-06-29 Film deposition device and film deposition method Pending JP2007009255A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008190929A (en) * 2007-02-02 2008-08-21 Konica Minolta Medical & Graphic Inc Radiation scintillator plate manufacturing method and radiographic imaging apparatus
KR101161388B1 (en) 2009-02-26 2012-07-02 가부시키가이샤 재팬 디스프레이 이스트 Weight plate of vacuum evaporation apparatus and vacuum evaporation apparatus using the same
WO2018103852A1 (en) * 2016-12-08 2018-06-14 Applied Materials, Inc. Holding arrangement for holding a substrate, carrier including the holding arrangement, method for holding a substrate, and method for releasing a substrate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008190929A (en) * 2007-02-02 2008-08-21 Konica Minolta Medical & Graphic Inc Radiation scintillator plate manufacturing method and radiographic imaging apparatus
KR101161388B1 (en) 2009-02-26 2012-07-02 가부시키가이샤 재팬 디스프레이 이스트 Weight plate of vacuum evaporation apparatus and vacuum evaporation apparatus using the same
WO2018103852A1 (en) * 2016-12-08 2018-06-14 Applied Materials, Inc. Holding arrangement for holding a substrate, carrier including the holding arrangement, method for holding a substrate, and method for releasing a substrate

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