JP2008190929A - Radiation scintillator plate manufacturing method and radiographic imaging apparatus - Google Patents

Abstract

When a phosphor layer is vapor-deposited on a substrate by a vapor deposition apparatus, there is a problem that a thin substrate is deformed by radiant heat at the time of vapor deposition and a vapor deposition film cannot be deposited uniformly. On the other hand, when the substrate is made thick, there is a problem that radiation absorption is increased.
A method of manufacturing a scintillator plate for radiation having a phosphor layer that emits light by irradiating the substrate with radiation, wherein the phosphor layer is formed on the surface of the substrate, and then the back surface side of the substrate is applied. A method for manufacturing a scintillator plate for radiation, wherein the substrate is etched to a thickness of 0.5 mm or less.
[Selection] Figure 2

Description

  The present invention relates to a method of manufacturing a scintillator plate for radiation that emits fluorescence upon receiving radiation, and a radiographic imaging apparatus having the scintillator plate.

  Conventionally, a radiographic imaging apparatus such as an X-ray image has been widely used for medical diagnosis in a medical field. In particular, radiographic imaging devices using intensifying screens and X-ray films have been used in medical sites around the world as a result of high sensitivity and high image quality in a long history.

  In recent years, digital radiographic image detection means represented by flat panel radiation detectors (FPD) and the like have also appeared, and radiographic images are acquired as digital information and freely subjected to image processing, and image information is immediately transmitted. It is possible to do.

  The radiation image detecting means has a so-called “scintillator plate” that converts radiation into fluorescence. The scintillator plate receives radiation that has passed through a subject and instantaneously emits fluorescence from the phosphor layer with an intensity corresponding to the radiation dose, and has a configuration in which a phosphor layer is formed on a substrate.

Patent Document 1 relates to a method of manufacturing a back-illuminated photodiode array, a step of forming a high concentration impurity region on one side of a semiconductor substrate, a step of bonding a support substrate to one side of the semiconductor substrate, Polishing the other surface to thin the semiconductor substrate, forming a high concentration impurity region and a plurality of photodiodes on the other surface of the semiconductor substrate, forming a hole penetrating the semiconductor substrate in the thickness direction, A step of electrically connecting through the holes, a step of removing the support substrate, and the like.
International Publication No. 2003/096427 Pamphlet

  The back-illuminated photodiode array described in Patent Document 1 relates to a semiconductor device, and forms a photodiode by forming a photodiode by thinning a semiconductor substrate on the opposite side after attaching a support substrate. It is intended to shorten the processing time for etching a through hole for use.

  In a radiographic imaging apparatus, a vapor deposition apparatus is mainly used for forming a phosphor layer. In the vapor deposition apparatus, since the substrate is mounted in the upper part of the apparatus, there is a problem in that the easily deformable substrate is deformed by radiant heat at the time of vapor deposition and the vapor deposition film cannot be deposited uniformly. On the other hand, when the substrate is thickened, there are problems such as difficulty in sealing with a protective film and increased radiation absorption.

  Said subject is achieved by the following this invention.

  1. A method for manufacturing a scintillator plate for radiation having a phosphor layer that emits light by irradiating the substrate with radiation, wherein the phosphor layer is formed on the surface of the substrate, and then the back side of the substrate is etched. And the thickness of the said board | substrate is produced in thickness less than 0.5 mm, The manufacturing method of the scintillator plate for radiations characterized by the above-mentioned.

  2. A method of manufacturing a scintillator plate for radiation having a phosphor layer that emits light when irradiated with radiation, wherein the phosphor layer is formed on the surface of the substrate, and then the back side of the substrate is polished And the thickness of the said board | substrate is produced in thickness less than 0.5 mm, The manufacturing method of the scintillator plate for radiations characterized by the above-mentioned.

  3. A method for manufacturing a scintillator plate for radiation having a phosphor layer that emits light by irradiating a substrate with radiation, wherein the phosphor layer is formed on the surface of the substrate and then protected on the phosphor layer side A method of manufacturing a scintillator plate for radiation, comprising: forming a film, etching or polishing the back side of the substrate, removing the substrate, and sealing with a protective film.

  4). A method for manufacturing a scintillator plate for radiation having a phosphor layer that emits light by irradiating a substrate with radiation, wherein the phosphor layer is formed on the surface of the substrate and then protected on the phosphor layer side A film is formed, the back side of the substrate is etched or polished, the substrate is removed or thinned to less than 0.5 mm, another substrate is bonded, and then sealed with a protective film A method for manufacturing a scintillator plate for radiation.

  5. After forming the phosphor layer on the substrate, or after forming the phosphor layer on the substrate and forming a protective film on the phosphor layer side, the entire scintillator plate is exposed to heat treatment, plasma treatment, and an atmosphere containing fluorine. A method for manufacturing a scintillator plate for radiation, wherein the back surface side of the substrate is etched or polished after performing other steps such as the above.

  6). Radiation having a radiation detection means in which the scintillator plate produced by the method for producing a scintillator plate for radiation according to any one of 1 to 5 is bonded to a photoelectric conversion means and accommodated in a housing. Image shooting device.

  The following effects can be obtained by the scintillator plate manufacturing method and the radiographic imaging apparatus of the present invention.

  1. The in-plane thickness of the scintillator crystal is made uniform by deformation during vapor deposition.

  2. By making the substrate thin and flexible so that it can be elastically deformed, it can be brought into close contact with the plane of the photoelectric conversion means comprising a plurality of photodiodes.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The present invention is not limited to the embodiment. FIG. 1 is a schematic diagram of a radiographic imaging apparatus 1 according to the embodiment of the present invention.

  The radiographic image capturing apparatus 1 includes a main body 10, a radiation detection unit 20, an image processing unit 30, and an image display unit 40. The main body 10 has the radiation detection means 20 and various devices mounted therein, and is fixed at a predetermined position in the radiation chamber.

  The radiographic imaging is performed by detecting the radiation irradiated from the radiation source 50 and transmitted through the subject 60 and the front plate 22 of the radiation detection means 20 by the radiation detection means 20.

  FIG. 2 is a partially enlarged sectional view of FIG.

  The radiation detection means 20 includes a front plate 22, a buffer material 23, a scintillator plate 200, and a phosphor layer 27 inside the housing 21.

  The scintillator plate 200 includes a phosphor layer 27 on the surface of the substrate 26. When the phosphor layer 27 is irradiated with radiation, the phosphor layer 27 absorbs the energy of the incident radiation and has a wavelength. It emits electromagnetic waves of 300 μm to 800 μm, that is, electromagnetic waves (light) ranging from ultraviolet light to infrared light centering on visible light.

  The scintillator plate 200 includes a substrate 26, a phosphor layer 27, and moisture-resistant protective films (hereinafter referred to as protective films) 24A and 24B that surround and seal these members.

  The main body 10 is made of a material having high rigidity, for example, ABS resin so that various devices mounted therein can be protected.

  The front plate 22 of the radiation detection means 20 is made of a material having a high radiation transmittance. The thickness of the front plate 22 is 0.3 to 0.5 mm, and the strength is maintained while ensuring the radiation transparency. Examples of materials having high radiation transmittance and high rigidity include aluminum alloys, carbon fiber reinforced resins, acrylic resins, phenol resins, polyimide resins, and composite materials of these resins and aluminum alloys.

  The front plate 22 presses the scintillator plate 200 through the buffer material 23 to bring the scintillator plate 200 into close contact with the photoelectric conversion means (light receiving element) 28.

The protective films 24 </ b> A and 24 </ b> B are formed in a bag shape by being bonded after enclosing the substrate 26 and the phosphor layer 27. It is desirable from the viewpoint of protecting the phosphor having deliquescence that the moisture permeability of the protective films 24A and 24B is 50 g / m ² or less per day.

  The most frequently used phosphor layer 27 is a crystal formed with Cs (cesium) as a base, and examples thereof include CsBr and CsCl in addition to CsI (cesium iodide). Further, a crystal body may be formed by using a plurality of raw materials constituting the phosphor layer 27 based on Cs at an arbitrary mixing ratio, and this crystal body may be used as a base.

  Since the most frequently used material is CsI: Tl using Tl as an activator, the present invention will be described based on this. An activator is an additive element necessary for generating fluorescence. Even if the concentration of Tl is too high, the emission intensity does not increase any more, and is usually set to 3 mol% or less with respect to Cs.

  FIG. 3 is a schematic configuration diagram of a vapor deposition apparatus for forming the phosphor layer 27. In this example, a vapor deposition process of CsI: Tl is taken as an example.

  The vapor deposition apparatus 71 has a box-shaped vacuum vessel 72, and a vapor deposition boat 73 is disposed inside the vacuum vessel 72. The boat 73 is a member to be focused on the vapor deposition source, and a resistance heater (heater) is connected to the boat 73. When a current flows through the resistance heating body, the resistance heating body generates heat due to Joule heat. As the boat 73, an alumina crucible around which a resistance heating body is wound is used.

  A holder 74 for holding the substrate 26 is disposed inside the vacuum vessel 72 and immediately above the boat 73. A rotation mechanism 75 that rotates the holder 74 is disposed in the holder 74. The rotating mechanism 75 includes a rotating shaft 76 connected to the holder 74 and a motor 77 serving as a driving source thereof. The rotation shaft 76 is rotated by driving the motor 77 and the holder 74 is rotated in a state of facing the boat 73.

  A vacuum pump 78 is connected to the vacuum vessel 72. The vacuum pump 78 exhausts the inside of the vacuum container 72 and introduces an inert gas into the vacuum container 72.

  First, the substrate 26 is attached to the holder 74, and the phosphor material is filled into the boat 73. Specifically, CsI: 3% mol of TlI powder is filled. As the substrate 26, an Al plate of 0.5 mm or more is generally used. Al is used because an element having an atomic number larger than that has a large X-ray absorption, and X-rays including image information are absorbed when operated as a scintillator plate. That is, as the substrate, it is desirable to use Al or a carbon-based substrate having a smaller atomic number or effective atomic number, or a resin substrate such as polyimide or PEN.

  Next, the vacuum pump 78 is operated to evacuate the inside of the vacuum vessel 72 (approximately 10 −3 Pa or less), and then an inert gas (for example, Ar up to a pressure of about 0.5 Pa) inside the vacuum vessel 72. While introducing the above, the inside of the vacuum vessel 72 is set to a predetermined degree of vacuum.

  Simultaneously with the formation of the vacuum atmosphere, the heater of the holder 74 and the motor 77 of the rotating mechanism 75 are driven, and the substrate 26 attached to the holder 74 is rotated while being heated while facing the boat 73 at a distance of 400 mm. The substrate is heated in a temperature region where CsI crystals grow in a columnar shape. Approximately 150-300 ° C is selected. The number of rotations is about 10 rpm, which is used to make the CsI film thickness on the substrate uniform.

  In this state, a current is passed through the resistance heating body, the phosphor material is heated at a predetermined temperature, and the phosphor material is vacuum deposited. Since the melting point of CsI is 621 ° C. and the melting point of TlI is 440 ° C., the boat is heated at 700 ° C. above that temperature. At this time, the vapor of CsI goes out of the boat at 700 ° C. and arrives at the surface of the substrate 26. As a result, innumerable columnar crystals sequentially grow on the surface of the substrate 26, and a desired phosphor layer 27 is formed on the substrate 26. Since CsI has a refractive index of about 1.7, the outside of the crystal column is air, and the refractive index is 1, so that X-rays are incident, absorbed by the CsI crystal, and emitted from the CsI crystal. The light reflects the inside of the pillar due to the difference in refractive index of the light (light guide effect). Since the photoelectric conversion means 28 of FIG. 1 is used for diagnosis, it is desirable that the CsI: Tl columnar crystals are aligned in a direction perpendicular to the photoelectric conversion means 28.

The problem with the conventional CsI: Tl deposition process is that the surface of the substrate 26 is exposed to vapor at 700 ° C. and the substrate faces downward, and is usually fixed only at the edge of the substrate. When deposited, its weight is 1.7 times heavier than the substrate 26 of 0.5 mm Al (density 2.7 g / cm ³ ), because CsI has a specific gravity of 4.5 g / cm ³ , flexible. When a substrate is used (0.5 mm or less for Al), the substrate warps in a convex shape in the boat direction (downward). Here, the flexible, CsI of 500μm to secure the opposite sides of the substrate or, when depositing a film of ^{4.5g / cm 3 × 0.05cm = 0.225g} / cm 2 to the entire surface, the center of the substrate It is defined as a substrate that protrudes downward by 1 mm or more. When the substrate warps downward in this manner, the columnar crystal does not grow so as to be perpendicular to the plane formed by the photoelectric conversion means 28, but light from the CsI: Tl crystal grown in a direction deviated from the vertical. Since the signal spreads, there is a problem that a desired light guide effect cannot be obtained and the resolution of the image is lowered.

[First Embodiment]
FIG. 4 is a schematic view showing a first embodiment of a method for manufacturing a scintillator plate for radiation.

  The phosphor layer 27 is formed on the surface side of the thick substrate 26 by the vapor deposition apparatus 70 (see FIG. 4A). The back side of the substrate 26 is etched or polished so that the thickness t of the substrate 26 is less than 0.5 mm (see FIG. 4B). In the solution means 1 and 2, the thickness of the Al substrate during CsI: Tl film formation is 0.5 mm or more to prevent deformation of the substrate during vapor deposition, and the orientation of the pillars of the phosphor 27 is always in the photoelectric conversion means 28. On the other hand, it grows vertically. Thereafter, the amount of attenuation of the X-ray image signal due to absorption by the substrate is reduced by reducing the thickness of the substrate to 0.2 mm by polishing, so that the image resolution (specifically, MTF (Modulation Transfer Function)) is used. In this case, the light emission from the phosphor can be increased and a high-resolution image with high signal intensity can be obtained.

Considering the case of Al, X-ray absorption at 24 kV used for mammography is calculated by changing the thickness t of the substrate from 0.5 mm to 0.2 mm. The X-ray shielding effect by Al of xmm thickness is about 2.2 cm ² / g of Al at 24 kV. Therefore, when the density of Al is 2.7 g / cm ³ , X-rays with an intensity of 10 If the intensity of X-rays transmitted through Al of xmm is I,
I / I0 = exp (−2.2 × 2.7 × x / 10) = exp (−0.59 × (mm))
It becomes. When the value of I / I0 is calculated at 0.5 mm and 0.2 mm thickness, 0.74 is improved to 0.89. This means that the amount of X-rays incident on the phosphor layer 27 is 0.89 / 0.74 = 1.21 times, and an image having a strong signal intensity of about 21% is obtained. In the present embodiment, the columnar shape and orientation of the phosphor layer 27 are the same as in the case where the thickness of the substrate is 0.5 mm. Therefore, the MTF value is directly applied to an Al substrate having a thickness of 0.2 mm. It does not drop as in the case of vapor deposition. Accordingly, it is possible to obtain a scintillator plate that can obtain an image with high signal intensity while maintaining sharpness (resolution).

  In the present embodiment, a thick substrate 26 (Al: 0.5 mm) is used during vapor deposition for forming the phosphor layer 27 to prevent deformation of the substrate 26 during vapor deposition. After the phosphor layer 27 is formed, the substrate 26 and the phosphor layer 27 are taken out, and the back side of the substrate 26 is etched or polished to thin the substrate 26.

For example, if the substrate 26 is Al, only the back surface can be wet-etched with a liquid containing H ₃ PO ₄ . Alternatively, a scintillator plate is placed on the electrode on one side in a plasma generator having parallel plate electrodes with the back side facing up. In this state, the processing chamber is evacuated to a vacuum degree of about 0.1 Pa. Thereafter, a mixed gas of BCl ₃ and Cl ₂ is introduced into the processing chamber so as to have a pressure of 10 Pa. Next, RF power of 13.25 MHz of about 0.2 W / cm ² is applied to the electrode surface. If the substrate 26 is a polyimide film, a scintillator plate is placed on one side of an electrode in a plasma generator having parallel plate electrodes with the back side facing up.

In this state, the processing chamber is evacuated to a vacuum degree of about 0.1 Pa. Thereafter, O ₂ gas is introduced into the processing chamber so that the pressure is 50 Pa. Next, RF power of 13.25 MHz of about 0.3 W / cm ² is applied to the electrode surface. Then, the polyimide film is etched. As a result, the substrate 26 can be made into a thin plate, loss of radiation absorption by the substrate 26 can be reduced, the amount of radiation absorbed by the phosphor layer 27 can be increased, and the light emission luminance from the phosphor layer 27 can be improved. .

  A polishing method may be used as a method of thinning the substrate 26.

  FIG. 5 is a schematic configuration diagram of the polishing apparatus.

  Using a polishing apparatus 80 shown in FIG. 5, a diamond-based polishing pad 82 and cerium oxide particles fixed on a surface plate 81 with a scintillator plate 85 set on a carrier 83 with the phosphor side up and the substrate down. What is necessary is just to polish Al of the board | substrate 26 using the polishing liquid 84 containing.

  Although not particularly described in the present embodiment, the substrate 26 may be thinned to 0.5 mm or less, and a resin film for reinforcing strength may be bonded to the back surface thereof. For example, the substrate 26 may be Al 0.5 mm, the phosphor 27 may be formed, the Al substrate 26 may be thinned to 0.2 mm, and a polyimide or PEN film having a thickness of about 0.5 mm may be attached to the back thereof.

  In this case, the X-ray absorption rate of the resin substrate is about 8% at 0.5 mm, and 92% of the X-rays pass therethrough, so there is no problem that the resin substrate absorbs a large amount of X-rays. The reason for not using a polyimide substrate directly is as follows. Since the polyimide substrate has heat resistance, Tg is 285 ° C., and the continuous use temperature is 250 ° C., the temperature at which CsI: Tl is deposited needs to be 250 ° C. or less. However, since an Al substrate is used in the present invention, it is possible to deposit at 300 ° C. at which the luminance of the CsI: Tl crystal is maximized, and it is possible to form a crystal with good image quality.

  When a polyimide substrate is used as the substrate 26 from the beginning, the vapor deposition temperature of CsI: Tl cannot be increased. However, since a polyimide substrate is used, X-ray absorption is small. Further, since CsI: Tl is deposited at a temperature of 250 ° C. or lower and the polyimide is thinned, the scintillator plate itself becomes more easily deformable and elastically deformable, and is in close contact with the plane of the photoelectric conversion means composed of a plurality of photodiodes. Therefore, the light transmission efficiency between the photoelectric conversion means and the phosphor 27 is increased, and a scintillator plate with high signal intensity is obtained.

[Second Embodiment]
FIG. 6 is a schematic diagram showing a second embodiment of a method for manufacturing a radiation scintillator plate.

  The phosphor layer 27 is formed on the surface side of the thick substrate 26 by the vapor deposition apparatus 70 (see FIG. 6A).

  After the phosphor layer 27 is formed on the surface of the substrate 26, the surface side of the phosphor layer 27 is covered with a protective film 24C and sealed (see FIG. 6B). For example, diradical paraxylylene is introduced into the reaction chamber, and a polyparaxylylene film obtained by polymerizing diradical paraxylylene under the conditions of 35 ° C. and 13 Pa is formed to a thickness of about 10 μm.

  Thereafter, the substrate 26 is removed by the method described in the first embodiment, and only the phosphor layer 27 and the protective film 24C are formed (see FIG. 6C). Since the surface of the phosphor layer 27 is covered with the protective film 24C during the removal operation, the phosphor layer is damaged or etched during the thinning operation, and the phosphor is adhering to moisture due to deliquescence. It can be prevented from dissolving and causing image defects. Then, you may form protective film 24A, 24B from the front side and back side as protective film sealing by a film.

  Alternatively, as another form, the substrate 26 is thinned, the substrate is easily deformed during handling, and the phosphor is deformed along with the deformation of the substrate during handling, which may cause an image defect. Specifically, another substrate 26 ′, for example, a polyimide substrate 0.5 mm may be bonded to the Al substrate 26 thinned to 0.2 mm (see FIG. 6D). Advantages in this case include the following points. Usually, a polyimide substrate has a heat resistance of Tg of 285 ° C. and a continuous use temperature of 250 ° C., so that the temperature at which CsI: Tl is deposited needs to be 250 ° C. or less. However, since an Al substrate is used in the present invention, it is possible to deposit at 300 ° C. at which the luminance of the CsI: Tl crystal is maximized, and it is possible to form a crystal with good image quality. The X-ray absorption rate of the polyimide substrate at 24 kV and the thickness of 500 μm is 8%, and the Al substrate is 26%. For example, the luminance of the phosphor layer is less deteriorated by attaching the polyimide substrate than Al.

  As described above, in the first and second embodiments, after the phosphor layer is formed on the substrate or the protective film is formed on the phosphor layer side, the back surface side of the substrate is not sandwiched between other steps. Although etching or polishing is performed, the substrate may be removed or thinned after other steps are performed. Specifically, heat treatment for increasing the luminance of the phosphor 27 (for example, storing at 250 ° C. for 30 minutes), plasma treatment for improving the moisture resistance of the phosphor, exposure to an atmosphere containing F, and the like. After performing the process, the back side of the substrate may be etched or polished. In this case, since the scintillator plate is kept in a vacuum or exposed to a temperature environment of 100 ° C. or higher in these processes, the substrate may be deformed in the process if the substrate is thin. In the present invention, this possibility is eliminated, and a scintillator with good sharpness can be obtained.

  In the present invention, CsI: Tl is used as the phosphor, but other phosphors may be used. Specifically, other materials such as CsBr and CsCl may be used instead of CsI. Moreover, you may use another activator instead of Tl. Specifically, other elements such as In, Li, K, Rb, Na, Eu, Cu, Ce, Zn, Ti, Gd, and Tb may be used. Polyparaxylylene was used as the protective film for 24C. However, any protective film of 24A, 24B, and 24C may be polyparaxylylene, and other films may be used as long as they have a function of preventing moisture permeation. May be. Specifically, other polyparaxylylene compounds such as polymonochloroparaxylylene and inorganic films such as SiN and SiON may be used. 24A and 24B may be sealed using a single layer or laminated film. For example, a total of 50 μm thick PET 20 μm / alumina deposited 0.2 μm / polypropylene 30 μm laminated film may be used. Although not shown in the present invention, for example, a polyester of several to 1 mm for preventing corrosion caused by a reaction between the halogen atoms of the phosphor 27 and the Al of the substrate 26 between the substrate 26 and the phosphor 27. A transparent insulating film made of may be provided. In addition, when a film such as polyimide or PEN, which is a material that does not reflect the light emitted from the phosphor 27, is used as the substrate 26, Al having a thickness of several hundreds of nanometers is formed on the surface of the substrate 26 on the phosphor 27 side. A transparent insulating film made of polyester or the like of several to 1 mm is provided between the reflective layer and the phosphor 27 to prevent corrosion caused by a reaction between the phosphor and Al. It may be provided.

1 is a schematic diagram of a radiographic image capturing apparatus according to an embodiment of the present invention. The partial expanded sectional view of FIG. The schematic block diagram of the vapor deposition apparatus which forms a fluorescent substance layer. The schematic diagram which shows 1st Embodiment of the manufacturing method of the scintillator plate for radiation. The schematic block diagram of a grinding | polishing apparatus. The schematic diagram which shows 2nd Embodiment of the manufacturing method of the scintillator plate for radiation.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Radiographic imaging apparatus 10 Main body 20 Radiation detection means 21 Housing 22 Front plate 23 Buffer material 24A Moisture-resistant protective film (protective film)
24B Moisture-resistant protective film (protective film)
24C Protective film 26, 26 'Substrate 27 Phosphor layer 28 Photoelectric conversion means (light receiving element)
DESCRIPTION OF SYMBOLS 29 Metal substrate 200 Scintillator plate 30 Image processing means 40 Image display means 50 Radiation source 60 Subject 71 Deposition apparatus 72 Vacuum container 73 Boat 74 Holder 75 Rotation mechanism 76 Rotating shaft 77 Motor 78 Vacuum pump 80 Polishing apparatus 81 Surface plate 82 Polishing pad 83 Carrier 84 Polishing liquid 85 Scintillator plate t Substrate thickness

Claims (7)

A method for manufacturing a scintillator plate for radiation having a phosphor layer that emits light by irradiating the substrate with radiation, wherein the phosphor layer is formed on the surface of the substrate, and then the back side of the substrate is etched. And the thickness of the said board | substrate is produced in thickness less than 0.5 mm, The manufacturing method of the scintillator plate for radiations characterized by the above-mentioned. A method of manufacturing a scintillator plate for radiation having a phosphor layer that emits light when irradiated with radiation, wherein the phosphor layer is formed on the surface of the substrate, and then the back side of the substrate is polished And the thickness of the said board | substrate is produced in thickness less than 0.5 mm, The manufacturing method of the scintillator plate for radiations characterized by the above-mentioned. 3. The method of manufacturing a scintillator plate for radiation according to claim 1, wherein the substrate after etching or polishing the back side of the substrate to produce a predetermined thickness has flexibility. A method for manufacturing a scintillator plate for radiation having a phosphor layer that emits light by irradiating a substrate with radiation, wherein the phosphor layer is formed on the surface of the substrate and then protected on the phosphor layer side A method of manufacturing a scintillator plate for radiation, comprising: forming a film, etching or polishing the back side of the substrate, removing the substrate, and sealing with a protective film. A method for manufacturing a scintillator plate for radiation having a phosphor layer that emits light by irradiating a substrate with radiation, wherein the phosphor layer is formed on the surface of the substrate and then protected on the phosphor layer side A film is formed, the back side of the substrate is etched or polished, the substrate is removed or thinned to less than 0.5 mm, another substrate is bonded, and then sealed with a protective film A method for manufacturing a scintillator plate for radiation. After forming the phosphor layer on the substrate, or after forming the phosphor layer on the substrate and forming a protective film on the phosphor layer side, the entire scintillator plate is exposed to heat treatment, plasma treatment, and an atmosphere containing fluorine. A method for manufacturing a scintillator plate for radiation, wherein the back surface side of the substrate is etched or polished after performing other steps such as the above. It has a radiation detection means which bonded the scintillator plate produced by the manufacturing method of the scintillator plate for radiation of any one of Claims 1-5 to the photoelectric conversion means, and was accommodated in the housing | casing. Radiation imaging device.

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