JP2002184769A - Semiconductor manufacturing equipment - Google Patents
Semiconductor manufacturing equipmentInfo
- Publication number
- JP2002184769A JP2002184769A JP2000377783A JP2000377783A JP2002184769A JP 2002184769 A JP2002184769 A JP 2002184769A JP 2000377783 A JP2000377783 A JP 2000377783A JP 2000377783 A JP2000377783 A JP 2000377783A JP 2002184769 A JP2002184769 A JP 2002184769A
- Authority
- JP
- Japan
- Prior art keywords
- rotating shaft
- semiconductor manufacturing
- substrate
- holding means
- products
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000006227 byproduct Substances 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 description 4
- 102100033040 Carbonic anhydrase 12 Human genes 0.000 description 1
- 101000867855 Homo sapiens Carbonic anhydrase 12 Proteins 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
(57)【要約】
【課題】 Ｓｉ3Ｎ4等の副生成物（ＮＨ4Ｃｌ）付着雰
囲気においても回転軸やボールベアリングなどに副生成
物が付着することを防止する。
【解決手段】 基板を保持する基板保持手段１０を回転
駆動可能な回転軸１２がボールベアリング１４を介して
回転自在に設けられている取付フランジ１６に、互いに
所定間隔をあけてヒータ取付穴１６ａを互いに平行に２
本形成し、それぞれのヒータ取付穴１６ａにヒータ２２
をそれぞれ挿入して、ヒータ２２により取付フランジ１
６を回転軸１２やボールベアリング１４に副生成物が付
着することを防止する温度に加熱する。
(57) [Problem] To prevent by-products from adhering to a rotating shaft, a ball bearing, and the like even in an atmosphere in which by-products (NH 4 Cl) such as Si 3 N 4 are adhered. SOLUTION: A heater mounting hole 16a is provided at a predetermined interval from a mounting flange 16 on which a rotating shaft 12 rotatably driving a substrate holding means 10 for holding a substrate is rotatably provided via a ball bearing 14. 2 parallel to each other
The heater 22 is formed in each of the heater mounting holes 16a.
Are respectively inserted, and the mounting flange 1 is
6 is heated to a temperature at which by-products are prevented from adhering to the rotating shaft 12 and the ball bearing 14.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、基板保持手段を回
転駆動可能な回転軸への副生成物の付着を阻止する構成
を有する半導体製造装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus having a structure for preventing by-products from adhering to a rotating shaft capable of rotating a substrate holding means.
【０００２】[0002]
【従来の技術】従来の回転軸により基板保持手段を回転
駆動させる半導体製造装置としては、図５に示されるも
のが知られている。この半導体製造装置は、基板を回転
可能に保持する基板保持手段１０と、この基板保持手段
１０に取り付けられ、基板保持手段１０を回転駆動可能
に支持する回転軸１２とを備え、回転軸１２は、ボール
ベアリング１４を介して取付フランジ１６に回転自在に
設けられている。回転軸１２の下端部は、これを回転駆
動可能なボート回転機構１８に連結されている。2. Description of the Related Art FIG. 5 shows a conventional semiconductor manufacturing apparatus in which a substrate holding means is driven to rotate by a rotating shaft. The semiconductor manufacturing apparatus includes a substrate holding means 10 for rotatably holding a substrate, and a rotating shaft 12 attached to the substrate holding means 10 and rotatably supporting the substrate holding means 10. , And is rotatably provided on the mounting flange 16 via the ball bearing 14. The lower end of the rotating shaft 12 is connected to a boat rotating mechanism 18 capable of driving the rotating shaft 12 to rotate.
【０００３】従来の半導体製造装置における基板の処理
は、回転軸１２により基板保持手段１０を回転駆動させ
ることにより、基板自体を回転させながら行い、基板面
内の均一性を向上させるようにしている。The substrate processing in the conventional semiconductor manufacturing apparatus is performed while rotating the substrate itself by rotating the substrate holding means 10 by the rotating shaft 12, thereby improving the uniformity in the substrate plane. .
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、上記従
来のものでは、Ｓｉ3Ｎ4膜のように副生成物（ＮＨ4Ｃ
ｌ）が付着するようなプロセスでは、回転軸１２自体の
シールが失われたり、最悪の場合は、ボールベアリング
１４が錆びたり、詰まったりして回転不能の状態に陥る
可能性がある。[0007] However, the above conventional, by-products as the Si 3 N 4 film (NH 4 C
In a process in which 1) is attached, the seal of the rotating shaft 12 itself may be lost, or in the worst case, the ball bearing 14 may be rusted or clogged, and the rotating shaft 12 may become unable to rotate.
【０００５】これを解決するものとして、特開平１０−
３３５３１７号公報及び特開平６−１６８９０４号公報
に示されるものがある。これらに示されるものは共に、
回転軸１２部分へ不活性ガスを供給して、回転軸１２部
分への反応ガスの侵入を防止するものである。To solve this problem, Japanese Patent Laid-Open No.
There are those disclosed in JP-A-335317 and JP-A-6-168904. Both of these are shown
The inert gas is supplied to the rotating shaft 12 to prevent the reaction gas from entering the rotating shaft 12.
【０００６】本発明は、上述した事情に鑑みてなされた
ものであり、回転軸のシール面やボールベアリングなど
回転軸近傍への副生成物の付着を防止することができる
半導体製造装置を提供することを目的としている。The present invention has been made in view of the above circumstances, and provides a semiconductor manufacturing apparatus capable of preventing by-products from adhering to the vicinity of a rotating shaft such as a sealing surface of a rotating shaft and a ball bearing. It is intended to be.
【０００７】[0007]
【課題を解決するための手段】前述した目的を達成する
ために、本発明は、基板を回転可能に保持する基板保持
手段と、該基板保持手段を回転駆動可能な回転軸とを有
する半導体製造装置において、上記回転軸近傍に副生成
物が付着するのを防止する加熱部材が設けられているこ
とを特徴とする。SUMMARY OF THE INVENTION In order to achieve the above-mentioned object, the present invention provides a semiconductor manufacturing method having a substrate holding means for rotatably holding a substrate, and a rotating shaft capable of rotating the substrate holding means. The apparatus is characterized in that a heating member is provided near the rotation shaft to prevent by-products from adhering.
【０００８】このような構成によれば、回転軸のシール
面やボールベアリングなど回転軸近傍を加熱できて、こ
れらに副生成物が付着するのを防止することができる。According to such a configuration, it is possible to heat the vicinity of the rotating shaft such as the seal surface of the rotating shaft and the ball bearing, thereby preventing by-products from adhering to these portions.
【０００９】[0009]
【発明の実施の形態】以下、本発明の実施の形態を図面
を用いて説明する。図１は本発明の実施の形態における
半導体製造装置を示す断面図、図２は本発明の実施の形
態における半導体製造装置の平面図を示す。実施の形態
における半導体製造装置２０において、１０は基板を回
転可能に保持する円板状の基板保持手段であり、この基
板保持手段１０には、この基板保持手段１０を回転駆動
可能に回転軸１２が取付けられている。回転軸１２は耐
食性のある材質のボールベアリング１４を介して取付フ
ランジ１６に回転自在に設けられている。回転軸１２の
下端部は、これを回転駆動可能なボート回転機構１８に
連結されている。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view showing a semiconductor manufacturing apparatus according to an embodiment of the present invention, and FIG. 2 is a plan view of the semiconductor manufacturing apparatus according to the embodiment of the present invention. In the semiconductor manufacturing apparatus 20 according to the embodiment, reference numeral 10 denotes a disk-shaped substrate holding means for rotatably holding a substrate, and the substrate holding means 10 includes a rotating shaft 12 for rotatably driving the substrate holding means 10. Is installed. The rotating shaft 12 is rotatably provided on the mounting flange 16 via a ball bearing 14 made of a corrosion-resistant material. The lower end of the rotating shaft 12 is connected to a boat rotating mechanism 18 capable of driving the rotating shaft 12 to rotate.
【００１０】取付フランジ１６には互いに所定間隔をあ
けてヒータ取付穴１６ａが平行に２本形成されており、
それぞれのヒータ取付穴１６ａに、図３に示されるヒー
タ２２が挿入されている。また、取付フランジ１６には
サーモスイッチ２４が取付けられている。サーモスイッ
チ２４はヒータ２２に接続されてヒータ２２の過加熱を
防止する。The mounting flange 16 is formed with two heater mounting holes 16a in parallel at a predetermined interval from each other.
The heaters 22 shown in FIG. 3 are inserted into the respective heater mounting holes 16a. A thermoswitch 24 is mounted on the mounting flange 16. The thermoswitch 24 is connected to the heater 22 to prevent the heater 22 from being overheated.
【００１１】以下、本実施の形態の動作について説明す
る。基板を処理する際には、回転軸１２により基板保持
手段１０を回転駆動させることにより基板自体を回転さ
せるとともに、ヒータ２２により取付フランジ１６を１
３０℃に加熱する。図４に示されるように、Ｓｉ3Ｎ4膜
の生成プロセスでは、１２０℃を境界にこの温度より低
いときに副生成物（ＮＨ4Ｃｌ）が固相になり、１２０
℃以上の温度のときにが気相になるので、取付フランジ
１６を１３０℃に加熱した場合には気相になり、回転軸
１２やボールベアリング１４内などに副生成物（ＮＨ4
Ｃｌ）が付着することがない。The operation of the embodiment will be described below. When processing the substrate, the substrate itself is rotated by rotating the substrate holding means 10 by the rotating shaft 12, and the mounting flange 16 is
Heat to 30 ° C. As shown in FIG. 4, in the process of forming the Si 3 N 4 film, the by-product (NH 4 Cl) becomes a solid phase when the temperature is lower than 120 ° C.
When the mounting flange 16 is heated to 130 ° C., it becomes a gaseous phase, and a by-product (NH 4) is formed in the rotating shaft 12 and the ball bearing 14.
Cl) does not adhere.
【００１２】なお、上記実施の形態においては、取付フ
ランジ１６にヒータ２２を２本挿入するのみであった
が、リング状のヒータにより回転軸１２本体も加熱する
ことができるようにしてもよい。Although only two heaters 22 are inserted into the mounting flange 16 in the above embodiment, the main body of the rotary shaft 12 may be heated by a ring-shaped heater.
【００１３】[0013]
【発明の効果】以上説明したように、本発明は、基板処
理の際に、ヒータによって取付フランジを加熱すること
により、回転軸のシール面やボールベアリングなどへの
副生成物の付着を防止することができる。また、これに
より、Ｓｉ3Ｎ4等の副生成物（ＮＨ4Ｃｌ）付着雰囲気
においても回転軸の性能が十分に発揮されるので、当該
プロセスにおいて基板の面内均一性が改善される。As described above, the present invention prevents the attachment of by-products to the seal surface of the rotating shaft, ball bearings, and the like by heating the mounting flange by the heater during substrate processing. be able to. In addition, the performance of the rotating shaft is sufficiently exhibited even in an atmosphere in which a by-product (NH 4 Cl) such as Si 3 N 4 is adhered, so that the in-plane uniformity of the substrate is improved in the process.
【図１】本発明を実施した半導体製造装の断面図であ
る。FIG. 1 is a sectional view of a semiconductor manufacturing apparatus embodying the present invention.
【図２】半導体製造装置の平面図である。FIG. 2 is a plan view of the semiconductor manufacturing apparatus.
【図３】ヒータの正面図である。FIG. 3 is a front view of a heater.
【図４】Ｓｉ3Ｎ4プロセスにおける副生成物（ＮＨ4Ｃ
ｌ）の昇華曲線である。FIG. 4 shows a by-product (NH 4 C) in a Si 3 N 4 process.
It is a sublimation curve of l).
【図５】従来の半導体製造装の断面図である。FIG. 5 is a sectional view of a conventional semiconductor manufacturing apparatus.
１０ 基板保持手段、１２ 回転軸、１４ ボールベア
リング、１６ 取付フランジ、１６ａ ヒータ取付穴。10 board holding means, 12 rotating shafts, 14 ball bearings, 16 mounting flanges, 16a heater mounting holes.
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 4K029 AA24 BD01 DA09 JA02 4K030 CA04 CA12 GA06 KA23 5F045 AB33 BB02 BB14 DP02 EB02 EK08 EM10 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4K029 AA24 BD01 DA09 JA02 4K030 CA04 CA12 GA06 KA23 5F045 AB33 BB02 BB14 DP02 EB02 EK08 EM10
Claims (1)
と、該基板保持手段を回転駆動可能な回転軸とを有する
半導体製造装置において、 上記回転軸近傍に副生成物が付着するのを防止する加熱
部材が設けられていることを特徴とする半導体製造装
置。1. A semiconductor manufacturing apparatus having a substrate holding means for rotatably holding a substrate, and a rotating shaft capable of rotating the substrate holding means, wherein a by-product is prevented from adhering near the rotating shaft. A semiconductor manufacturing apparatus, comprising: a heating member that performs heating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000377783A JP4446587B2 (en) | 2000-12-12 | 2000-12-12 | Semiconductor manufacturing apparatus and substrate processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000377783A JP4446587B2 (en) | 2000-12-12 | 2000-12-12 | Semiconductor manufacturing apparatus and substrate processing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002184769A true JP2002184769A (en) | 2002-06-28 |
| JP4446587B2 JP4446587B2 (en) | 2010-04-07 |
Family
ID=18846454
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000377783A Expired - Lifetime JP4446587B2 (en) | 2000-12-12 | 2000-12-12 | Semiconductor manufacturing apparatus and substrate processing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4446587B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010098164A (en) * | 2008-10-17 | 2010-04-30 | Rigaku Corp | Processing apparatus and semiconductor manufacturing device |
-
2000
- 2000-12-12 JP JP2000377783A patent/JP4446587B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010098164A (en) * | 2008-10-17 | 2010-04-30 | Rigaku Corp | Processing apparatus and semiconductor manufacturing device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4446587B2 (en) | 2010-04-07 |
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