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JP2002009041A - Wet treatment device - Google Patents

Wet treatment device

Info

Publication number
JP2002009041A
JP2002009041A JP2000189576A JP2000189576A JP2002009041A JP 2002009041 A JP2002009041 A JP 2002009041A JP 2000189576 A JP2000189576 A JP 2000189576A JP 2000189576 A JP2000189576 A JP 2000189576A JP 2002009041 A JP2002009041 A JP 2002009041A
Authority
JP
Japan
Prior art keywords
substrate
processing apparatus
treatment
wet processing
center
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000189576A
Other languages
Japanese (ja)
Other versions
JP4079579B2 (en
Inventor
Yoshimoto Koga
義基 古賀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Electric Kagoshima Ltd
NEC Kagoshima Ltd
Original Assignee
Nippon Electric Kagoshima Ltd
NEC Kagoshima Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Kagoshima Ltd, NEC Kagoshima Ltd filed Critical Nippon Electric Kagoshima Ltd
Priority to JP2000189576A priority Critical patent/JP4079579B2/en
Publication of JP2002009041A publication Critical patent/JP2002009041A/en
Application granted granted Critical
Publication of JP4079579B2 publication Critical patent/JP4079579B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PROBLEM TO BE SOLVED: To solve the problem that a particle adheres again by allowing treatment liquid to remain near the center of a substrate that is highlighted according to enlargement in the size of the substrate since plane treatment is carried out to a glass substrate, in a method for performing washing treatment to the substrate that is being conveyed with slant attitude on a substrate conveyance path that is slanted in a surface that orthogonally crosses a conveyance direction as the washing method of the glass substrate. SOLUTION: In a curved state where the center part of a substrate 1 becomes higher, treatment liquid 8 flows and is discharged from the center of the substrate 1 to an end part without stagnation to allow the surface of the substrate 1 to be subjected to chemical liquid or pure water spry treatment, thus eliminating the need for draining the chemical liquid on the front and rear surfaces of the substrate to prevent the chemical liquid after the chemical liquid treatment from being taken out, and at the same time reducing the readhesion of the particle to the surface of the substrate after the pure water spray treatment.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、基板の処理装置、
特に、基板表面のエッチング、又は、基板表面の洗浄に
用いられるウェット処理装置に関するものである。
The present invention relates to a substrate processing apparatus,
In particular, the present invention relates to a wet processing apparatus used for etching a substrate surface or cleaning a substrate surface.

【0002】[0002]

【従来の技術】従来、ガラス基板の洗浄方法として、例
えば、特開平08−039742号公報には、搬送方向
に対して直交した面内で傾斜した基板搬送路の上を、傾
斜姿勢で搬送されつつある基板に洗浄処理をする方法が
示されている。
2. Description of the Related Art Conventionally, as a method of cleaning a glass substrate, for example, Japanese Patent Application Laid-Open No. 08-039742 discloses that a glass substrate is conveyed in an inclined posture on a substrate conveyance path inclined in a plane perpendicular to the conveyance direction. A method for performing a cleaning process on a growing substrate is shown.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、この洗
浄処理方法は、ガラス基板に対しては平面処理であるが
為に、基板のサイズ拡大に伴ってクローズアップされて
くる基板中央付近での処理液の滞留によるパーティクル
の再付着という問題に対しては解決策とはなっていなか
った。さらに、傾斜した搬送路では、下がった方の搬送
ローラの方に基板の負荷が偏ってしまい、搬送の安定性
がないという問題もある。
However, since this cleaning treatment method is a planar treatment for a glass substrate, the treatment liquid near the center of the substrate, which is getting close up as the size of the substrate is increased. It has not been a solution to the problem of redeposition of particles due to stagnation. Furthermore, in the inclined conveyance path, the load of the substrate is biased toward the lower conveyance roller, and there is a problem that the conveyance is not stable.

【0004】本発明の目的は、エッチング液、或いは、
洗浄液の基板中央付近での滞留による問題を解決するこ
とのできるウェット処理装置を提供することにある。
An object of the present invention is to provide an etching solution or
An object of the present invention is to provide a wet processing apparatus capable of solving a problem caused by the stay of a cleaning liquid near the center of a substrate.

【0005】[0005]

【課題を解決するための手段】本発明のウェット処理装
置は、基板を搬送しながら前記基板の上方から前記基板
の表面に前記基板の表面を処理する処理液を滴下させる
ウェット処理装置であって、前記基板の搬送が、前記基
板を上方に湾曲させて行われることを特徴とし、前記基
板の湾曲が、前記基板の両端を上下の搬送ローラで挟
み、少なくとも前記基板の中央部を中間ローラにより前
記基板の中央部を前記基板の上方に押し上げることによ
り行われる、或いは、前記基板の湾曲が、前記基板の両
端を上下の搬送ローラで挟み、前記基板の中央部を第1
の中間ローラにより前記基板の中央部を前記基板の上方
に押し上げ、かつ、前記基板の中央部と前記基板の両端
との間に設けられた第2の中間ローラにより前記基板を
前記基板の上方に押し上げることにより行われる、とい
うもので、前記基板の両端の上下の搬送ローラ以外の中
間ローラは、その直径が、前記基板の両端の下の搬送ロ
ーラの直径よりも長く、前記中間ローラは、前記基板の
中央部に近づくほどその径が長くなり、前記基板の中央
部でその径が最大の長さとなる、というものである。
A wet processing apparatus according to the present invention is a wet processing apparatus for dropping a processing solution for processing the surface of the substrate from above the substrate onto the surface of the substrate while transporting the substrate. Wherein the transfer of the substrate is performed by bending the substrate upward, wherein the bending of the substrate sandwiches both ends of the substrate between upper and lower transfer rollers, and at least a central portion of the substrate is an intermediate roller. This is performed by pushing up the central portion of the substrate above the substrate, or the substrate is curved such that both ends of the substrate are sandwiched between upper and lower transport rollers, and the central portion of the substrate is placed in the first position.
The intermediate roller pushes up the central portion of the substrate above the substrate, and the second intermediate roller provided between the central portion of the substrate and both ends of the substrate raises the substrate above the substrate. The intermediate rollers other than the upper and lower transport rollers at both ends of the substrate have a diameter longer than the diameter of the transport rollers below both ends of the substrate, and the intermediate roller is The diameter becomes longer as approaching the center of the substrate, and the diameter becomes the maximum length at the center of the substrate.

【0006】上述のウェット処理装置は、前記基板の表
面への前記処理液の滴下が、スプレーにより行われ、さ
らに具体的には、前記基板の表面への前記処理液の滴下
が、前記基板の上方に設けられた複数のスプレーノズル
からのスプレーにより行われる、或いは、前記基板の表
面への前記処理液の滴下が、前記基板の上方に設けられ
た一つのスプレーノズルからのスプレーにより行われ、
前記一つのスプレーノズルは、前記基板の中央部の真上
に位置し、前記基板が、薄膜トランジスタを搭載する透
明基板である、という形態を採り得る。
In the wet processing apparatus described above, the treatment liquid is dropped on the surface of the substrate by spraying, and more specifically, the treatment liquid is dropped on the surface of the substrate. It is performed by spraying from a plurality of spray nozzles provided above, or, the dripping of the treatment liquid onto the surface of the substrate is performed by spraying from one spray nozzle provided above the substrate,
The one spray nozzle may be located right above a central portion of the substrate, and the substrate may be a transparent substrate on which a thin film transistor is mounted.

【0007】[0007]

【発明の実施の形態】次に、本発明の実施形態を説明す
る前に、本発明の特徴について記しておく。本発明のウ
ェット処理装置は、基板の表裏面を枚葉式にウエット処
理する際、基板を湾曲した状態を保持したままで薬液処
理及び純水処理を行い、パーティクルの基板への再付着
を低減し、基板を薬液処理した後の基板の表面からの液
切り作業を不要とするものである。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Before describing embodiments of the present invention, the features of the present invention will be described. The wet processing apparatus of the present invention performs a chemical solution treatment and a pure water treatment while maintaining the substrate in a curved state when performing wet processing on the front and back surfaces of the substrate in a single-wafer manner, thereby reducing reattachment of particles to the substrate. This eliminates the need for a draining operation from the surface of the substrate after the substrate is subjected to the chemical treatment.

【0008】即ち、基板の裏面両端部に搬送ローラを配
置し、搬送ローラの中間に搬送ローラより径が大きい中
間ローラで支持する。基板の表面端部には上乗せローラ
が設けられ、上述の裏面両端部の搬送ローラとペアとな
って基板の両端を挟み込み、基板の上方には、薬液処理
及び純水処理用のスプレーノズルが取り付けられてい
る。基板は上乗せローラと搬送ローラで基板端部を挟
み、中間ローラで基板裏面中心線を押し付けることで湾
曲し、その状態にて搬送しながら薬液処理及び純水スプ
レー処理を順次行う。
That is, transport rollers are disposed at both ends of the rear surface of the substrate, and are supported by intermediate rollers having a diameter larger than that of the transport rollers between the transport rollers. An upper roller is provided at the edge of the front surface of the substrate, and is paired with the transport roller at both ends of the back surface to sandwich both ends of the substrate. A spray nozzle for chemical solution treatment and pure water treatment is mounted above the substrate. Have been. The substrate is bent by sandwiching the edge of the substrate between the loading roller and the transport roller, and pressing the center line of the rear surface of the substrate with the intermediate roller, and sequentially performs the chemical solution treatment and the pure water spray process while transporting the substrate in this state.

【0009】次に、本発明の第1の実施形態を図1に基
づいて説明する。図1は、本発明の第1の実施形態のウ
ェット処理装置を基板の搬送方向に直交する平面で搬送
中の基板と共に切断したときの様子を示す模式断面図で
ある。
Next, a first embodiment of the present invention will be described with reference to FIG. FIG. 1 is a schematic cross-sectional view showing a state where the wet processing apparatus according to the first embodiment of the present invention is cut along with a substrate being transported on a plane perpendicular to the substrate transport direction.

【0010】まず、ガラス等の材料からなる基板1の裏
面両端部に搬送ローラ2を配置し、搬送ローラ2の中間
には搬送ローラ2より径が大きい中間ローラ3で基板1
を支持している。基板1の中央部の中間ローラ3の他
に、基板1の両端部と中間ローラ3との間にも中間ロー
ラ4が設けられており、中間ローラの径は、基板1の中
央部の中間ローラ3の径が最も大きく、搬送ローラ2に
向かうに従って徐々にその径が小さくなるようにそれぞ
れの径が設定される。
First, a transport roller 2 is disposed at both ends of the back surface of a substrate 1 made of a material such as glass, and an intermediate roller 3 having a diameter larger than that of the transport roller 2 is provided between the transport rollers 2.
I support. In addition to the intermediate roller 3 at the center of the substrate 1, an intermediate roller 4 is provided between both ends of the substrate 1 and the intermediate roller 3. Each diameter is set so that the diameter of the roller 3 is the largest and gradually decreases toward the transport roller 2.

【0011】この実施形態では、中間ローラを3つ設け
た例を示しているが、中間ローラとしては、基板の中央
部の中間ローラのみの場合、基板の中央部の中間ローラ
以外に4以上の偶数倍の中間ローラを設けた場合等も本
実施形態の変形例として考えられる。
In this embodiment, an example in which three intermediate rollers are provided is shown. However, in the case where only intermediate rollers at the center of the substrate are used, four or more intermediate rollers are provided in addition to the intermediate rollers at the center of the substrate. A case where an even number of intermediate rollers are provided is also considered as a modification of the present embodiment.

【0012】上記の基板1の裏面両端部の搬送ローラ2
に加えて、基板1の表面端部には上乗せローラ5が設け
られ、基板1の上方には、スプレーパイプ6に複数本の
スプレーノズル7が取り付けられ、これらの組み合わせ
により、ウェット処理装置20が構成されている。
The transport rollers 2 at both ends of the back surface of the substrate 1
In addition to the above, an upper roller 5 is provided at an end of the surface of the substrate 1, and a plurality of spray nozzles 7 are attached to a spray pipe 6 above the substrate 1. It is configured.

【0013】基板1は上乗せローラ5と搬送ローラ2で
基板1の両端部を挟み込み、中間ローラ3で基板1の裏
面の中央部を押し上げ、中間ローラ4で基板1の中央部
での押し上げを支持することで、基板1の中央部が高く
なる湾曲した形状で基板1を保持している。
The substrate 1 is sandwiched between the both ends of the substrate 1 by the loading roller 5 and the transport roller 2, the center of the back surface of the substrate 1 is pushed up by the intermediate roller 3, and the pushing of the substrate 1 at the center is supported by the intermediate roller 4. By doing so, the substrate 1 is held in a curved shape in which the central portion of the substrate 1 becomes higher.

【0014】この湾曲の度合いに関しては、基板の材料
により異なるが、液晶パネル用に採用されているガラス
基板等では、例えば、平面形状が680mm×880m
m、厚さが0.7mmのサイズのガラス製基板の場合、
湾曲させる上限値としては、ガラス製基板の中央部が平
坦なときよりも70mm突き出る状態であり、湾曲させ
る下限値としては、ガラス基板両端部の搬送ローラの高
低差にガラス基板の厚さを加えた値が必要である。
The degree of the curvature varies depending on the material of the substrate, but in the case of a glass substrate or the like used for a liquid crystal panel, for example, the planar shape is 680 mm × 880 m.
m, in the case of a glass substrate with a thickness of 0.7 mm,
The upper limit for bending is a state in which the center of the glass substrate protrudes 70 mm from when it is flat, and the lower limit for bending is obtained by adding the thickness of the glass substrate to the height difference of the transport rollers at both ends of the glass substrate. Value is required.

【0015】次に、ウェット処理装置20の動作につい
て、図1を参照して説明する。
Next, the operation of the wet processing apparatus 20 will be described with reference to FIG.

【0016】まず、モータ、ギヤを用いた駆動部(図示
省略)により、搬送ローラ2、中間ローラ3、4、上乗
せローラ5を基板1を搬出する方向(紙面に垂直ないず
れかの方向)に回転させることで基板1を湾曲した状態
を保持したまま搬送する。
First, the transport roller 2, the intermediate rollers 3, 4, and the upper roller 5 are moved in the direction of carrying out the substrate 1 (any direction perpendicular to the paper) by a drive unit (not shown) using a motor and gears. By rotating, the substrate 1 is transported while maintaining the curved state.

【0017】次に、基板1の上方に配置しているスプレ
ーパイプ6に処理液8を供給し、スプレーノズル7によ
り基板1の表面に処理液8を吐出し、薬液処理及び純水
スプレー処理を順次行う。
Next, a processing liquid 8 is supplied to a spray pipe 6 disposed above the substrate 1, and the processing liquid 8 is discharged to the surface of the substrate 1 by a spray nozzle 7, thereby performing chemical liquid processing and pure water spray processing. Perform sequentially.

【0018】本実施形態の効果として、まず第一に、基
板1の洗浄処理において、基板1の表面での洗浄処理液
の滞留による洗浄処理液中の浮遊パーティクルの基板1
表面への再付着が低減できるということである。
As an effect of the present embodiment, first, in the cleaning process of the substrate 1, floating particles in the cleaning processing solution due to stagnation of the cleaning solution on the surface of the substrate 1 are removed.
This means that redeposition on the surface can be reduced.

【0019】その理由は、基板1の中央部が高くなる湾
曲した状態で、基板1の表面に純水スプレー処理を行う
為、洗浄処理液が基板1の中央部から端部に、洗浄処理
により発生したパーティクルを含んだ処理水が停滞する
ことなく図中矢印Xの方向に流れ、排出される。
The reason for this is that pure water spraying is performed on the surface of the substrate 1 in a curved state in which the central portion of the substrate 1 is raised. The treated water containing the generated particles flows in the direction of arrow X in the figure without stagnation and is discharged.

【0020】第二の効果として、薬液処理後の薬液持ち
出し防止の為に行う基板1の表裏面の薬液の液切り作業
が不要となる。
As a second effect, there is no need to remove the chemical solution on the front and back surfaces of the substrate 1 to prevent the chemical solution from being taken out after the chemical solution treatment.

【0021】その理由は、基板1の薬液処理後、基板1
の中央部が高くなる湾曲した状態で基板1を水洗処理槽
に搬送する為、薬液が基板1に停滞することなく流れ落
ち、基板1の表面から排出される。
The reason is that after the substrate 1 is treated with the chemical solution, the substrate 1
Since the substrate 1 is conveyed to the washing tank in a curved state in which the central portion of the substrate 1 is raised, the chemical solution flows down without stagnating on the substrate 1 and is discharged from the surface of the substrate 1.

【0022】次に、本発明の第2の実施形態を図2に基
づいて説明する。図2は、本発明の第2の実施形態のウ
ェット処理装置を基板の搬送方向に直交する平面で搬送
中の基板と共に切断したときの様子を示す模式断面図で
ある。
Next, a second embodiment of the present invention will be described with reference to FIG. FIG. 2 is a schematic cross-sectional view showing a state where the wet processing apparatus according to the second embodiment of the present invention is cut along with a substrate being transported on a plane perpendicular to the substrate transport direction.

【0023】まず、基板1の裏面両端部に搬送ローラ2
を配置し、搬送ローラ2の中間に搬送ローラより径が大
きい中間ローラ3で基板1を支持する。基板1の表面端
部には上乗せローラ5が設けられ、基板1の中央部上方
に薬液処理及び純水処理用のスプレーノズル17が取り
付けられ、これらの組み合わせにより、ウェット処理装
置30が構成されている。
First, transport rollers 2 are provided at both ends of the back surface of the substrate 1.
Are disposed, and the substrate 1 is supported by an intermediate roller 3 having a diameter larger than that of the transport roller in the middle of the transport roller 2. An upper roller 5 is provided at an end of the surface of the substrate 1, and a spray nozzle 17 for chemical solution treatment and pure water treatment is attached above a central portion of the substrate 1. A wet treatment device 30 is configured by a combination thereof. I have.

【0024】この実施形態では、基板1の上方に基板1
の中央部の上方に位置するスプレーノズル17のみを設
け、スプレーノズル17を大流量仕様のノズルにするこ
とで、洗浄処理により発生したパーティクルを含んだ洗
浄処理水が、基板1の中央部から端部に、第1の実施形
態よりもさらに停滞することなく流れていく為、パーテ
ィクルの基板1の表面への再付着を一層低減させること
ができる。
In this embodiment, the substrate 1
By providing only the spray nozzle 17 positioned above the central portion of the substrate 1, and by using the spray nozzle 17 as a nozzle having a large flow rate, the cleaning treatment water containing the particles generated by the cleaning process flows from the central portion of the substrate 1 to the end. Since the particles flow into the section without further stagnation than in the first embodiment, the reattachment of particles to the surface of the substrate 1 can be further reduced.

【0025】[0025]

【発明の効果】以上に説明したように、本発明のウェッ
ト処理装置は、基板の中央部が高くなる湾曲した状態
で、基板の表面に薬液処理、或いは、純水スプレー処理
を行う為、処理液が基板の中央部から端部に停滞するこ
となく流れ、排出されるので、薬液処理後の薬液持ち出
し防止の為に行う基板の表裏面の薬液の液切り作業が不
要となると共に、純水スプレー処理後のパーティクルの
基板の表面への再付着を低減させることができる。
As described above, the wet processing apparatus of the present invention performs the chemical treatment or the pure water spray treatment on the surface of the substrate in a curved state in which the central portion of the substrate is raised. Since the liquid flows from the center of the substrate to the end without stagnating and discharged, the work of draining the chemical solution on the front and back surfaces of the substrate to prevent the chemical solution from being taken out after the chemical solution treatment is not required. Reattachment of particles after spraying to the surface of the substrate can be reduced.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1の実施形態のウェット処理装置を
示す模式断面図である。
FIG. 1 is a schematic sectional view showing a wet processing apparatus according to a first embodiment of the present invention.

【図2】本発明の第2の実施形態のウェット処理装置を
示す模式断面図である。
FIG. 2 is a schematic sectional view showing a wet processing apparatus according to a second embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 基板 2 搬送ローラ 3、4 中間ローラ 5 上乗せローラ 6 スプレーパイプ 7、17 スプレーノズル 8 処理液 20、30 ウェット処理装置 DESCRIPTION OF SYMBOLS 1 Substrate 2 Transport roller 3, 4 Intermediate roller 5 Extra roller 6 Spray pipe 7, 17 Spray nozzle 8 Treatment liquid 20, 30 Wet treatment device

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H01L 21/306 J ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01L 21/306 J

Claims (10)

【特許請求の範囲】[Claims] 【請求項1】 基板を搬送しながら前記基板の上方から
前記基板の表面に前記基板の表面を処理する処理液を滴
下させるウェット処理装置であって、前記基板の搬送
が、前記基板を上方に湾曲させて行われることを特徴と
するウェット処理装置。
1. A wet processing apparatus for dropping a processing liquid for treating the surface of the substrate from above the substrate while transporting the substrate, wherein the transport of the substrate moves the substrate upward. A wet processing apparatus characterized by being bent.
【請求項2】 前記基板の湾曲が、前記基板の両端を上
下の搬送ローラで挟み、少なくとも前記基板の中央部を
中間ローラにより前記基板の中央部を前記基板の上方に
押し上げることにより行われる請求項1記載のウェット
処理装置。
2. The method according to claim 1, wherein the substrate is curved by sandwiching both ends of the substrate between upper and lower transport rollers and pushing at least a central portion of the substrate above the substrate by an intermediate roller. Item 4. A wet processing apparatus according to Item 1.
【請求項3】 前記基板の湾曲が、前記基板の両端を上
下の搬送ローラで挟み、前記基板の中央部を第1の中間
ローラにより前記基板の中央部を前記基板の上方に押し
上げ、かつ、前記基板の中央部と前記基板の両端との間
に設けられた第2の中間ローラにより前記基板を前記基
板の上方に押し上げることにより行われる請求項1記載
のウェット処理装置。
3. The curvature of the substrate is such that both ends of the substrate are sandwiched between upper and lower transport rollers, and a central portion of the substrate is pushed up above the substrate by a first intermediate roller, and The wet processing apparatus according to claim 1, wherein the processing is performed by pushing up the substrate above the substrate by a second intermediate roller provided between a central portion of the substrate and both ends of the substrate.
【請求項4】 前記基板の両端の上下の搬送ローラ以外
の中間ローラは、その直径が、前記基板の両端の下の搬
送ローラの直径よりも長い請求項2又は3記載のウェッ
ト処理装置。
4. The wet processing apparatus according to claim 2, wherein a diameter of an intermediate roller other than upper and lower transport rollers at both ends of the substrate is longer than a diameter of a transport roller below both ends of the substrate.
【請求項5】 前記中間ローラは、前記基板の中央部に
近づくほどその径が長くなり、前記基板の中央部でその
径が最大の長さとなる請求項4記載のウェット処理装
置。
5. The wet processing apparatus according to claim 4, wherein the diameter of the intermediate roller increases as it approaches the center of the substrate, and the diameter of the intermediate roller is the maximum at the center of the substrate.
【請求項6】 前記基板の表面への前記処理液の滴下
が、スプレーにより行われる請求項1、2、3、4又は
5記載のウェット処理装置。
6. The wet processing apparatus according to claim 1, wherein the treatment liquid is dropped on the surface of the substrate by spraying.
【請求項7】 前記基板の表面への前記処理液の滴下
が、前記基板の上方に設けられた複数のスプレーノズル
からのスプレーにより行われる請求項1、2、3、4、
5又は6記載のウェット処理装置。
7. The method according to claim 1, wherein the treatment liquid is dropped on a surface of the substrate by spraying from a plurality of spray nozzles provided above the substrate.
7. The wet processing apparatus according to 5 or 6.
【請求項8】 前記基板の表面への前記処理液の滴下
が、前記基板の上方に設けられた一つのスプレーノズル
からのスプレーにより行われる請求項1、2、3、4、
5又は6記載のウェット処理装置。
8. The method according to claim 1, wherein the treatment liquid is dropped on a surface of the substrate by spraying from a single spray nozzle provided above the substrate.
7. The wet processing apparatus according to 5 or 6.
【請求項9】 前記一つのスプレーノズルは、前記基板
の中央部の真上に位置する請求項8記載のウェット処理
装置。
9. The wet processing apparatus according to claim 8, wherein the one spray nozzle is located immediately above a central portion of the substrate.
【請求項10】 前記基板が、薄膜トランジスタを搭載
する透明基板である請求項1、2、3、4、5、6、
7、8又は9記載のウェット処理装置。
10. The method according to claim 1, wherein the substrate is a transparent substrate on which a thin film transistor is mounted.
10. The wet processing apparatus according to 7, 8 or 9.
JP2000189576A 2000-06-23 2000-06-23 Wet processing equipment Expired - Fee Related JP4079579B2 (en)

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