JP2001118769A - Exposure apparatus, sample shot selection method, and device manufacturing method - Google Patents

Abstract

(57) [Summary] [PROBLEMS] To eliminate a situation where an operator must manually select a sample shot as much as possible. SOLUTION: Sample shot selecting means for selecting a sample shot from a plurality of shot positions on a substrate to be exposed is provided, and exposure is performed for each shot position on the substrate to be exposed using the selected sample shot. In the exposure apparatus, the sample shot selecting means includes:
It is assumed that a plurality of different algorithms (means 1 to 3) can be used as an algorithm for selecting the sample shot.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resist coating apparatus used for manufacturing an integrated circuit, an exposure apparatus used for a semiconductor manufacturing apparatus having a semiconductor exposure apparatus and a developing apparatus, and the like.
In this exposure apparatus, the present invention relates to a method of selecting a sample shot to be used when performing alignment, focus leveling, and the like, and a device manufacturing method using the same.

[0002]

2. Description of the Related Art Conventionally, the layout of each shot positioned by a step-and-repeat or step-and-scan operation on a wafer exposed by a semiconductor exposure apparatus such as a so-called stepper or scan exposure apparatus requires an operator to determine the size of the wafer. The semiconductor device is created in consideration of process conditions such as a layout of a size exposed by the semiconductor exposure apparatus, a reticle pattern area, a shot size, and a chip size. All operations such as alignment, focus leveling, and exposure are performed based on this layout.

For example, when overlay exposure is performed on each shot area of a wafer, alignment is performed between a reticle pattern to be exposed and a chip pattern in each shot area. Conventionally, the alignment position of shots in a wafer is measured from measured values of several shots (sample shots) in the wafer, called global alignment, in consideration of the balance between productivity of ICs and LSIs and alignment accuracy. A method is used in which all shots in a wafer are aligned based on the obtained values. The exposure apparatus has one dedicated sample shot automatic selection unit that selects a sample shot that is optimal and recommended for alignment and focus leveling, and can select a sample shot according to the sample shot automatic selection unit. It has become.

[0004] One example of a sample shot that has been conventionally recommended to be optimal is that the shot is arranged substantially symmetrically from the center of the wafer, substantially evenly around the circumference, and arranged as outside as possible except for the outer periphery of the wafer. There is something to choose. When alignment is performed using a conventionally used sample shot automatic selection unit according to this selection algorithm, as shown in FIG.
0 mm), considering a layout with an exposure size of 26 × 33 mm, the sample shot S1
S4 are arranged near the center of the wafer W1. This is because the use of shots around the periphery of the wafer W tends to cause errors in the measurement values used for alignment due to the influence of the film thickness variation of the photosensitive material (resist) on the wafer W1 and the distortion of the wafer W1. This is because, as described above, a condition of “excluding the area outside the wafer” is added. When global alignment is performed using the sample shots arranged as described above, the span between the sample shots measured near the center of the wafer W1 is short, so that the wafer W
The precision of the measured value of the magnification or rotation of the shot array in 1 is degraded.

In recent years, however, in the case of a φ8 ″ wafer, even shots around the periphery of the wafer are hardly affected by variations in the thickness of the resist on the wafer, distortion of the wafer, and the like. If this situation also applies to the wafer W1, the operator manually selects shots around the outside of the wafer as sample shots for alignment and sets the interval (span) between sample shots. It can be increased and the error of the measured value can be reduced.

In recent years, the production of semiconductors using wafers having a diameter of 12 ″ (300 mm) has also been increasing. For example, a semiconductor exposure apparatus as shown in FIG. But φ8 ”
Both (200 mm) and φ12 ″ (300 mm) wafers can be used.
Considering a layout of an exposure size of 26 × 33 mm for a (300 mm) wafer, as shown in FIG.
On the wafer W2, the span of the sample shot becomes large. However, in the case of the wafer W2 of φ12 ″ (300 mm), since the wafer is large, the influence of the film thickness variation of the photosensitive material (resist) on the wafer W2 and the distortion of the wafer W2 are ignored in shots around the wafer W2. For this reason, when shots around the wafer W2 are used as sample shots for alignment and focus leveling, errors are likely to occur in the measured values, that is, the wafer W2 of φ12 ″ (300 mm). Also, if an automatic selection unit that uses shots outside the wafer as sample shots for alignment is used, the accuracy of the measured values of the magnification and rotation of the shot array in the wafer W2 deteriorates as in the related art. In such a case, it is desirable not to select a shot outside the wafer as a sample shot for alignment or focus leveling as in the related art.

[0007]

According to the above prior art, the sample shot is automatically selected by the sample shot automatic selection means according to one fixed algorithm, so that the operator can select the size of the wafer and the semiconductor Automatically select the truly optimal sample shot despite the fact that the optimal sample shot changes each time the process conditions such as the layout of the size exposed by the exposure device, reticle pattern area, shot size, and chip size change. Can not. In other words, in the case of automatically selecting a sample shot, the selection must be made using one fixed algorithm by the automatic sample shot selection means, even though the optimum sample shot changes depending on the process conditions. Therefore,
If the sample shot selected according to the fixed algorithm is not optimal, the operator has to manually select the sample shot, which causes a problem that the work efficiency is reduced.

An object of the present invention is to minimize the situation in which an operator must manually select a sample shot in an exposure apparatus, a method for selecting a sample shot, and a method for manufacturing a device, in view of the problems in the prior art. It is in.

[0009]

In order to achieve this object, a first exposure apparatus of the present invention includes a sample shot selection section for selecting a sample shot from a plurality of shot positions on a substrate to be exposed, In an exposure apparatus that performs exposure for each shot position on the substrate to be exposed using the selected sample shot, the sample shot selection unit determines whether to include an outer peripheral shot on the substrate to be exposed as a sample shot. It is characterized by changing.

The second exposure apparatus includes a sample shot selecting section for selecting a sample shot from among a plurality of shot positions on the substrate to be exposed, and each shot on the substrate to be exposed is selected by using the selected sample shot. In an exposure apparatus that performs exposure on a position, the sample shot selecting unit changes an arrangement angle of the sample shot with respect to a coordinate axis on the substrate to be exposed.

The third exposure apparatus includes a sample shot selecting section for selecting a sample shot from a plurality of shot positions on the substrate to be exposed, and each shot on the substrate to be exposed is selected by using the selected sample shot. In an exposure apparatus that performs exposure on a position, the sample shot selection unit can be used by changing a selection method to be used from among a plurality of sample shot selection methods.

In a fourth exposure apparatus, in any one of the first to third exposure apparatuses, the sample shot selection section executes the change in accordance with a difference in predetermined conditions.

The fifth exposure apparatus includes a sample shot selecting section for selecting a sample shot from a plurality of shot positions on the substrate to be exposed, and each shot on the substrate to be exposed using the selected sample shot. In an exposure apparatus that performs exposure on a position, the sample shot selection unit can use a plurality of different algorithms as an algorithm for selecting the sample shot.

In a sixth exposure apparatus, in the fifth exposure apparatus, the sample shot selecting section uses any one of the plurality of algorithms according to a method of using the sample shot or a difference in exposure condition. It is characterized by having an algorithm selecting means for selecting whether or not there is a difference.

A seventh exposure apparatus is the exposure apparatus according to any one of the first to sixth exposure apparatuses, wherein the sample shot selection section comprises:
A sample shot for global alignment of the substrate to be exposed is selected.

An eighth exposure apparatus according to any one of the first to seventh exposure apparatuses, wherein the sample shot selection section comprises:
A sample shot for focus leveling of the substrate to be exposed is selected.

According to the first method of selecting a sample shot of the present invention, a plurality of shot positions on a substrate to be exposed are selected.
In a method of selecting a sample shot based on a predetermined algorithm, the predetermined algorithm includes an algorithm selecting step of selecting one from a plurality of prepared ones, and selecting the sample shot based on the selected algorithm. And a sample shot selecting step to be performed.

In a second sample shot selecting method, in the first sample shot selecting method, the algorithm selecting step includes a condition specifying step of specifying an exposure condition of the substrate to be exposed, And selecting the algorithm by selecting the algorithm.

A third sample shot selecting method is a sample shot selecting method for selecting a sample shot from among a plurality of shot positions on the substrate to be exposed when exposing each shot position on the substrate to be exposed. Is characterized in that whether or not an outer peripheral shot on a substrate to be exposed is included as a sample shot is changed.

A fourth sample shot selecting method is a sample shot selecting method for selecting a sample shot from among a plurality of shot positions on the exposed substrate when exposing each shot position on the exposed substrate. Wherein the arrangement angle of the sample shot with respect to the coordinate axis on the substrate to be exposed is changed.

A fifth sample shot selecting method is a sample shot selecting method for selecting a sample shot from among a plurality of shot positions on the substrate to be exposed when exposing each shot position on the substrate to be exposed. Wherein the selection method used among a plurality of sample shot selection methods is changed and used.

A sixth sample shot selection method is the same as any of the third to fifth sample shot selection methods, wherein the change is executed according to a difference in predetermined conditions.

A seventh sample shot selecting method is the method according to any one of the first to sixth sample shots, wherein the selected sample shot is a sample shot for global alignment of the substrate to be exposed. There is a feature.

An eighth sample shot selecting method is the method according to any one of the first to seventh sample shots, wherein the selected sample shot is a sample shot for focus leveling of the substrate to be exposed. There is a feature.

A ninth sample shot selection method is a method according to the second sample shot selection method, wherein the exposure conditions include a size of the substrate to be exposed, a shape of an effective exposure area on the substrate to be exposed, or It is characterized in that the shape of the shot area on the substrate to be exposed is included.

The device manufacturing method of the present invention comprises the first to ninth
Selecting a sample shot from a plurality of shot positions on the substrate to be exposed by any one of the sample shot selection methods, and exposing each shot position on the substrate to be exposed using the selected sample shot. And a performing step.

In the configuration of the present invention, selection of an appropriate sample shot is performed by executing selection suitable for exposure conditions and the like. Therefore, the situation where the operator has to manually select the sample shot is avoided as much as possible.

[0028]

[Embodiment 1] FIG. 1 is a plan view showing a layout of shots to be exposed in a scanning type semiconductor exposure apparatus according to a first embodiment of the present invention, and FIG.
9 shows an exposure layout when exposing an 8 ″ wafer.
In this layout, the screen size of one exposure is 26 × 3 in contrast to the exposure layout of a semiconductor exposure apparatus that performs still exposure, ie, a stepper, which is 22 × 22 mm.
It is as large as 3 mm. In the drawing, W1 is a wafer of φ8 ″, SHOT is a shot at the exposure screen size of the main scanning semiconductor exposure apparatus, and S1 to S4 (four shots) are layouts of the exposure screen size of the main scanning semiconductor exposure apparatus. This is a sample shot for alignment or global leveling.

When selecting sample shots for global alignment and global leveling in this layout, an automatic sample shot selecting means according to the following algorithm can be used. That is, with respect to the wafer W1, it is almost unlikely that an error will occur in the measured value due to a large variation in the thickness of the resist on the wafer W1 in a shot around the wafer and a large distortion of the wafer W1. Does not happen.
Therefore, a shot around the wafer is preferentially selected as a sample shot.

Hereinafter, an example of a sample shot forming method using the semiconductor exposure apparatus of the present embodiment will be described with reference to FIGS. FIG. 4 is a flowchart showing a sample shot creating operation in the semiconductor exposure apparatus. FIG. 3 is a block diagram showing a functional configuration of a software system for performing this operation. In this embodiment, FIG.
As shown in FIG. 4B, a portion 4 (orientation flat portion) on the wafer W1 which has been partially cut out in a plane as shown in FIG.
A sample shot of a shot shall be selected.

When the sample shot creation operation is started,
As shown in FIG. 4, first, in step 41, the operation of the input / output device 31 of FIG.
The semiconductor process input unit 32 stores semiconductor process information 33. The semiconductor process information 33 includes, as shown in FIG. 5, the outer diameter dW of the wafer W1, the invalid exposure area iW, the step size XS in the X direction, the step size YS in the Y direction, the row MR of the matrix, the column MC of the matrix, and the wafer. Layout center X to center
The coordinate MOX, the Y coordinate MOY of the layout center, the wafer creation variation EW, the resist coating unevenness RW, and the like are configured. Next, in step 42, the sample shot selection means input section 34 determines whether the operator has designated the selection of sample shots by automatic selection or manual selection by operating the input / output device 31.

If it is determined in step 42 that automatic selection has been designated, and if the automatic selection of sample shots is to be used, step 43
In, the sample shot automatic selection determination unit uses the semiconductor process information 33 to determine which sample shot automatic selection unit in the sample shot automatic selection holding unit is to be used. At this time, as shown in FIG.
Since a template indicating the relation of which sample shot automatic selecting means is most effective for the semiconductor process information 33 is prepared, the sample shot automatic selecting means recommended as optimal is determined by referring to the template. be able to. However, referring to FIGS. 5 and 6, FIG.
For the semiconductor process information of the exposure layout of (b), means 1 or means 2 is selected. In the present embodiment, the template of FIG. 6 is registered so that means 1 is selected. Shall be

Next, at step 44, the sample shot automatic selection unit 36 performs automatic selection of sample shots using the determined sample shot automatic selection means, ie, the means 1. FIG. 2A is a view for explaining the means 1. Referring to FIG. 2A and FIG. 6, according to the means 1, it is the same as the prior art, and it is necessary to arrange four shots so that the circumference is almost evenly distributed. Therefore, the sample shot is ± 4
One shot is selected in each of a range of 5 degrees and a range of ± 45 degrees from the y-axis. That is, since there are four sample shots, one shot may be searched within a range of 90 degrees. In addition, since the sample shots are arranged almost symmetrically from the center of the wafer, shots close to a straight line at y = ± 0 are set as first candidates. Furthermore, a sample shot is selected on the outer side as much as possible, including the outer periphery. Therefore, the sample shots S1 to S4 can be selected as shown in FIG. When the automatic selection of the sample shot ends, the process proceeds to step 45.

On the other hand, if it is determined in step 42 that manual selection has been designated, and if the automatic sample shot selecting means is not to be used, the process proceeds to step 46, where the sample shot manual selecting section 39 causes the operator to select Accept free sample shot selection,
Thereafter, the process proceeds to step 45.

In step 45, the shot selected in steps 44 and 46 is set as a sample shot of the main scanning type semiconductor exposure apparatus so as to be measured by a CPU 9 described later. If all the sample shots for alignment and focus leveling have been selected, the exposure sequence in the present semiconductor exposure apparatus is started in step 47 based on the instruction of the operator.

Note that the focus leveling sample shot can be determined in the same manner as the alignment sample shot, and a description thereof will be omitted. In this embodiment, the description is limited to the sample shots for alignment and focus leveling. However, the present invention is not limited to this. The present invention can be applied to the selection of.

Hereinafter, assuming that the same shot has been selected as the sample shot for focus leveling and alignment, with reference to the flowchart of FIG.
The exposure sequence in step 47 will be described. FIG. 7 shows the configuration of the scanning semiconductor exposure apparatus of this embodiment for performing this exposure sequence. In this apparatus, as shown in the figure, an exposure light beam from an exposure illumination system (not shown) is applied to an electronic circuit pattern formed on a reticle R. The pattern irradiated with the exposure light beam is projected onto the wafer W1 via the projection optical system 1 and is exposed. As the illumination light for the exposure, g-rays and i-rays from a mercury lamp, ultraviolet pulse light from an excimer laser light source, and the like are used. The wafer W1 is placed on a chuck CK provided on a stage 11 that can move two-dimensionally along the XY plane. SHO is an optical system for positioning and detects a position in the X direction. A similar positioning optical system (not shown) is mounted to detect the position in the Y direction. Reference numeral 9 denotes a CPU for controlling the operation of the entire exposure apparatus.

The positioning optical system SHO includes a positioning illumination device 2, a beam splitter 3, and an imaging optical system for irradiating the light speed of non-exposure light that does not expose the resist (photosensitive agent) applied on the wafer W1. And an imaging device 5 for photoelectrically converting an image formed by the imaging optical system 4. 6
Is an A / D converter for converting the output of the imaging device 5 into a two-dimensional digital signal sequence, and 7 is for setting a processing window for the digitized two-dimensional image signal and moving it in the Y direction within the window. By performing averaging, 1
An integrating device for converting into a digital signal sequence S (x) of dimensions, 8
Is a one-dimensional digital signal sequence S output from the integrating device 7
This is a position detection device that performs pattern matching on (x) using a template pattern stored in advance, and outputs the address position of S (x) having the highest degree of matching with the template pattern to the CPU 9.

In this configuration, when the exposure sequence is started, as shown in FIG.
In steps 1 to 87, measurement and measurement for relative positioning (alignment) of the reticle R and the wafer W1 and focus leveling are performed by the following procedure. That is, first, in step 81, the wafer W1 is moved to the XY stage 11 by a wafer transfer device (not shown).
Place on the upper chuck CK. Next, in step 82, the global leveling component of the wafer W1 is
In order to perform measurement and leveling using the optical auto-focusing devices LD and PD, the stage driving device 10 is commanded to move to the focus leveling sample shot S1 set in step 45 of FIG. To drive the XY stage 11. Then, in step 83, data for performing focus leveling is measured.

Thus, the sample shots S1 to S
4 is measured, and when it is determined in step 84 that the measurement is completed, the process proceeds to step 85, where the first measurement shot S1 is formed from the alignment sample shots set in step 45 in FIG. A command is sent to the stage driving device 10 to drive the XY stage 11 so that the alignment marks M1x and M1y located within the visual field range of the alignment optical system SHO.

Next, at step 86, alignment measurement is performed for the first measurement shot S1. That is, the alignment mark M1x (hereinafter, referred to as a wafer mark) is illuminated by the alignment illumination system 2 of the alignment optical system SHO via the beam splitter 3, the reticle R, and the projection optical system 1. The wafer mark M1x is
A plurality of rectangular patterns having the same shape are arranged at a constant pitch. The light beam reflected by the wafer mark M1x is again transmitted to the beam splitter 3 via the projection optical system 1 and the reticle R.
, And is reflected there to form an image of the wafer mark M1x on the imaging surface of the imaging device 5 via the imaging optical system 4.
This image is photoelectrically converted by the imaging device 5, converted into a two-dimensional digital signal sequence by the A / D converter 6, and furthermore by the integrating device 7 to a one-dimensional digital signal sequence S (x)
Is converted to The digital signal string S (x) is subjected to pattern matching in the position detection device 8, and the address position of S (x) having the highest degree of matching with the template pattern is output to the CPU 9. Since this output signal is the position of the wafer mark M1x with reference to the imaging surface of the imaging device 5, the CPU 9 determines the position of the wafer mark M1x from the relative position of the imaging device 5 and the reticle R obtained in advance by a method (not shown). The position of M1x with respect to reticle R is obtained by calculation. This means that the amount of displacement in the x direction of the first measurement shot S1 has been measured. Next, CP
U9 measures the amount of displacement in the y direction in the same procedure as in the x direction measurement. This completes the alignment measurement for the sample shot S1. Further, in the same procedure as above, alignment measurement is performed on other sample shots S2 to S4 two-dimensionally arranged according to a predetermined arrangement coordinate system of a semiconductor exposure apparatus or the like.

If it is determined in step 87 that the alignment measurement has been completed, then in steps 88 to 91
, Focus leveling and alignment are corrected according to the results of the focus leveling measurement and the alignment measurement, and step-and-scan exposure is performed. When it is determined in step 91 that the exposure for all shots has been completed, in step 92, the wafer W1 is unloaded by a wafer transfer device (not shown).

In the same procedure as in steps 81 to 92,
Perform an exposure sequence until there are no unprocessed wafers,
If it is determined in step 93 that the exposure processing has been completed for all the wafers, the exposure sequence ends.

[Embodiment 2] Next, FIG.
(B) A second embodiment will be described with reference to FIGS. 3, 4, and 6. FIG. Also in the present embodiment, as shown in FIG. 1C, four sample shots on a wafer W1 which is circular and partly (orientation flat portion) is cut out in a plane are selected.

The operation of creating a sample shot is performed by the software system configuration of FIG. 3 according to the flowchart of FIG. The processing in steps 41 and 42 is the same as in the first embodiment. In step 43, in the first embodiment, it is determined which sample shot automatic selecting means is optimal to use using the semiconductor process information 33. In the present embodiment, however, the operation of the input / output device 31 by the operator is performed. , The sample shot automatic selection means is determined in the sample shot selection means input section 34. That is, in the case of FIG. 1B, for example, the shots S1 and S3 can take a long distance (span) in the y-direction measurement value. On the other hand, if a sample shot is selected as shown in FIG. 1C, shots having a long distance (span) will increase. Accordingly, the operator operates the input / output device 31 so as to select shots such as the shots S1 to S4 in FIG. 1C. , It is directly determined that the means 2 is used as the automatic sample shot selecting means.

In step 44, automatic selection of a sample shot is performed using the means 2 determined as the automatic sample shot selection means. The means 2 shown in FIG. 2B and FIG. 6 is a sample shot automatic selection means having the following selection algorithm. That is, as in the prior art, four sample shots must be arranged so that the circumference is substantially evenly distributed. Therefore, in this embodiment, the first quadrant, the second quadrant, the third quadrant, and the fourth
One sample shot is selected from each quadrant. Further, in order to arrange the sample shots substantially symmetrically from the center of the wafer, as shown in FIG.
A shot on the straight line of = ± x in the counterclockwise direction is set as a first candidate of a sample shot. Further, as shown in FIG. 6, a sample shot is selected on the outer side as much as possible, including the periphery outside the wafer. Therefore, sample shots S1 to S4 as shown in FIG. 1C can be selected.

Also in this embodiment, when the automatic sample shot selecting means is not used in step 42, the operator freely selects a sample shot in step 46 by the processing of the sample shot manual selecting section 39. be able to.

In step 45, the shot selected in steps 44 and 46 is set as a sample shot of the main scanning type semiconductor exposure apparatus so that the CPU 9 measures it. Then, when all of the sample shots for alignment and focus leveling are selected, the semiconductor exposure sequence in step 47 is started based on the instruction of the operator. This exposure sequence is the same as in the first embodiment, and a description thereof will be omitted.

Third Embodiment Next, a third embodiment will be described with reference to FIGS. 9 shows an exposure layout or a layout of IC or LSI chips in the scanning type semiconductor exposure apparatus of the present embodiment using a φ12 ″ wafer. In the present embodiment, a circular part is formed as shown in FIG. (Orientation flat portion) 4 sample shots on a wafer with a plane notch are selected, in which W2 is a φ12 ″ (300 mm) wafer, and SHOT is the exposure of the main scanning semiconductor exposure apparatus. Shots in screen size, S1 to S4, are sample shots for alignment or global leveling in a layout of an exposure screen size of 26 × 33 mm of the main scanning type semiconductor exposure apparatus.

The operation of creating a sample shot is performed by the software system configuration of FIG. 3 according to the flowchart of FIG. The processing in steps 41 and 42 is the same as in the first embodiment.

In step 43, semiconductor process information 3
By using 3, it is determined which sample shot automatic selection means in the sample shot automatic selection holding unit 38 is to be used. At this time, as can be seen from the semiconductor process information 33 on the exposure layout of FIG. 9 shown in FIG. 5 and FIG. 6, in the case of the present embodiment, the sample shot automatic selecting means includes a process of not selecting a wafer outer peripheral shot. Will decide to use the third means.

In step 44, the sample shots are automatically selected using the means 3 determined as the sample shot automatic selection means. As shown in FIGS. 6 and 9,
The means 3 is an automatic sample shot selecting means having the following selection algorithm. That is, as in the prior art, four sample shots must be arranged so that the circumference is substantially evenly distributed. for that reason,
Also in the present embodiment, one sample shot is selected from each of the first quadrant, the second quadrant, the third quadrant, and the fourth quadrant. Further, since the sample shots are arranged almost symmetrically from the center of the wafer, as shown in FIG.
A shot in the counterclockwise direction on the straight line of y = ± x is set as a first candidate of a sample shot. Further, from FIG.
A sample shot is selected on the outside as much as possible except for the periphery outside the wafer. Therefore, as shown in FIG. 9, shots S1 to S4 can be selected as sample shots.

Also in this embodiment, when the automatic sample shot selecting means is not used in step 42, the operator can freely select the sample shot by the processing of the sample shot manual selecting section 39 in step 46. Can be.

In each embodiment, it is assumed that the sample shot automatic selection means is held in the apparatus in advance, but the operator may use the existing sample shot automatic selection means after changing it. Good.

<Embodiment of Device Manufacturing Method> Next, an embodiment of a device manufacturing method using the exposure apparatus of each of the above embodiments will be described. FIG. 11 shows a flow of manufacturing micro devices (semiconductor chips such as ICs and LSIs, liquid crystal panels, CCDs, thin-film magnetic heads, micromachines, etc.). In step 1 (circuit design), a device pattern is designed. Step 2 is a process for making a mask on the basis of the designed pattern. On the other hand, in step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon or glass. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer. The next step 5 (assembly) is called a post-process, and step 4
Is a process of forming a semiconductor chip using the wafer produced by the above process, and includes processes such as an assembly process (dicing and bonding) and a packaging process (chip encapsulation). In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 5 are performed. Through these steps, a semiconductor device is completed and shipped (step 7).

FIG. 12 shows a detailed flow of the wafer process (step 4). Step 11 (oxidation) oxidizes the wafer's surface. Step 12 (CVD) forms an insulating film on the wafer surface. Step 13 (electrode formation) forms electrodes on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. In step 15 (resist processing), a resist is applied to the wafer. Step 16 (exposure) uses the above-described exposure apparatus or exposure method to align and print the circuit pattern of the mask on a plurality of shot areas of the wafer. Step 17 (development) develops the exposed wafer. In step 18 (etching), portions other than the developed resist image are removed. In step 19 (resist stripping), unnecessary resist after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.

By using the production method of this embodiment, a large-sized device, which has been conventionally difficult to produce, can be produced at low cost.

[0058]

As described above, according to the present invention,
An appropriate sample shot can be selected according to a semiconductor process condition or the like in a semiconductor exposure apparatus.
Therefore, the operation of selecting a sample shot according to the process conditions and the like, which has been manually performed by the operator in the past, can be automatically performed, and the situation in which the operator must manually select the sample shot can be avoided as much as possible. .

Further, by using a sample shot automatically selected appropriately, measurement for global alignment and focus leveling can be accurately performed without an operator having to manually select a sample shot. Further, by using the measured value for data correction at the time of exposure, it is possible to perform exposure with accurate alignment and focus leveling without an operator having to manually select a sample shot.

[Brief description of the drawings]

FIG. 1 is a plan view illustrating a conventional sample shot and sample shots according to first and second embodiments of the present invention.

FIG. 2 is an explanatory diagram of a sample shot automatic selection unit in the first and second embodiments of the present invention.

FIG. 3 is a block diagram showing a functional configuration of a software system according to the first to third embodiments of the present invention.

FIG. 4 is a flowchart showing a sample shot selecting operation in the first to third embodiments of the present invention.

FIG. 5 is a diagram showing a specific example of semiconductor process information in the configuration of FIG. 3;

6 is a diagram showing a specific example of a sample shot automatic selection means holding unit in the configuration of FIG. 3;

FIG. 7 is a configuration diagram of a semiconductor exposure apparatus that performs a sample shot creation sequence according to the first embodiment of the present invention.

FIG. 8 is a flowchart illustrating an exposure sequence in the semiconductor exposure apparatus of FIG. 7;

FIG. 9 is a diagram illustrating an example of a sample shot according to a third embodiment of the present invention.

FIG. 10 is an explanatory diagram of a sample shot automatic selection unit according to a third embodiment of the present invention.

FIG. 11 is a flowchart illustrating a device manufacturing method that can use the exposure apparatus of the present invention.

FIG. 12 is a detailed flowchart of a wafer process in FIG. 11;

[Explanation of symbols]

1: Projection optical system, 2: Positioning illumination device, 3: Beam splitter, 4: Image forming optical system, 5: Imaging device, 6: A
/ D converter, 7: integrating device, 8: position detecting device, 9:
CPU, 10: stage driving device, 11: stage, 1
2: storage device, 31: input / output device, 32: semiconductor process input unit, 33: semiconductor process information, 34: sample shot selection means input unit, 35: sample shot automatic selection determination unit, 36: sample shot automatic selection unit, 3
7: sample shot determination unit, 38: sample shot automatic selection holding unit, 39: sample shot manual selection unit,
CK: chuck, LD: light emitting unit, PD: light receiving unit, R: reticle, S1 to S4: sample shot, SHO: positioning optical system, SHOT: shot, W1: φ8 ″ wafer, W2: φ12 ″ wafer .

Claims (18)

[Claims] 1. A sample shot selecting section for selecting a sample shot from a plurality of shot positions on a substrate to be exposed, and exposing each shot position on the substrate to be exposed using the selected sample shot. The sample shot selecting section changes whether or not to include a peripheral shot on a substrate to be exposed as a sample shot. 2. A sample shot selecting section for selecting a sample shot from a plurality of shot positions on a substrate to be exposed, and exposing each shot position on the substrate to be exposed using the selected sample shot. The sample shot selecting section changes an arrangement angle of a sample shot with respect to a coordinate axis on a substrate to be exposed. 3. A sample shot selecting section for selecting a sample shot from among a plurality of shot positions on a substrate to be exposed, and exposing each shot position on the substrate to be exposed using the selected sample shot. An exposure apparatus according to claim 1, wherein said sample shot selecting section can be used by changing a selection method to be used from among a plurality of sample shot selection methods. 4. The exposure apparatus according to claim 1, wherein the sample shot selection unit performs the change according to a difference in a predetermined condition. 5. A sample shot selection unit for selecting a sample shot from a plurality of shot positions on a substrate to be exposed, and exposing each shot position on the substrate to be exposed using the selected sample shot. An exposure apparatus, wherein the sample shot selecting unit can use a plurality of different algorithms as an algorithm for selecting the sample shot. 6. The method according to claim 1, wherein the sample shot selecting unit includes an algorithm selecting unit that selects which one of the plurality of algorithms is to be used according to a method of using the sample shot or a difference in exposure condition. The exposure apparatus according to claim 5, wherein 7. The apparatus according to claim 1, wherein the sample shot selection unit selects a sample shot for global alignment of the substrate to be exposed.
The exposure apparatus according to any one of claims 1 to 6. 8. The apparatus according to claim 1, wherein the sample shot selection section selects a sample shot for focus leveling of the substrate to be exposed.
8. The exposure apparatus according to claim 7. 9. A method of selecting a sample shot from a plurality of shot positions on a substrate to be exposed based on a predetermined algorithm, wherein one of a plurality of prepared shots is selected as the predetermined algorithm. And a sample shot selecting step of selecting the sample shot based on the selected algorithm. 10. The algorithm selecting step includes a condition specifying step of specifying an exposure condition of the substrate to be exposed, and a step of selecting the algorithm based on the specified condition. 9. The method for selecting a sample shot according to item 9. 11. A sample shot selecting method for selecting a sample shot from among a plurality of shot positions on a substrate to be exposed when exposing each shot position on the substrate to be exposed, the substrate being exposed as a sample shot A method for selecting a sample shot, comprising changing whether or not to include the upper peripheral shot. 12. A sample shot selecting method for selecting a sample shot from among a plurality of shot positions on a substrate to be exposed when exposing each shot position on the substrate to be exposed. A method for selecting a sample shot, comprising changing an arrangement angle with respect to an upper coordinate axis. 13. A sample shot selecting method for selecting a sample shot from a plurality of shot positions on a substrate to be exposed when exposing each shot position on the substrate to be exposed, wherein a plurality of sample shot selecting methods are provided. A method for selecting a sample shot, wherein a selection method used from inside is changed and used. 14. The method according to claim 11, wherein the change is performed according to a difference in a predetermined condition. 15. The selected sample shot is:
The method according to claim 9, wherein the sample shot is a sample shot for global alignment of the substrate to be exposed. 16. The selected sample shot is:
The method for selecting a sample shot according to any one of claims 9 to 15, wherein the sample shot is a sample shot for focus leveling of the substrate to be exposed. 17. The exposure condition includes a size of the substrate to be exposed, a shape of an effective exposure region on the substrate to be exposed, or a shape of a shot region on the substrate to be exposed. Item 10. The method for selecting a sample shot according to Item 10. 18. A step of selecting a sample shot from a plurality of shot positions on a substrate to be exposed by the method of selecting a sample shot according to claim 9, and said substrate to be exposed using the selected sample shot. Exposing each of the above shot positions to light.