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JP2001053199A - Circuit board manufacturing method - Google Patents

Circuit board manufacturing method

Info

Publication number
JP2001053199A
JP2001053199A JP22960799A JP22960799A JP2001053199A JP 2001053199 A JP2001053199 A JP 2001053199A JP 22960799 A JP22960799 A JP 22960799A JP 22960799 A JP22960799 A JP 22960799A JP 2001053199 A JP2001053199 A JP 2001053199A
Authority
JP
Japan
Prior art keywords
aluminum nitride
plate
nitride substrate
circuit board
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22960799A
Other languages
Japanese (ja)
Other versions
JP4049487B2 (en
Inventor
Yasuto Fushii
康人 伏井
Nobuyuki Yoshino
信行 吉野
Yoshihiko Tsujimura
好彦 辻村
Katsunori Terano
克典 寺野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denka Co Ltd
Original Assignee
Denki Kagaku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denki Kagaku Kogyo KK filed Critical Denki Kagaku Kogyo KK
Priority to JP22960799A priority Critical patent/JP4049487B2/en
Publication of JP2001053199A publication Critical patent/JP2001053199A/en
Application granted granted Critical
Publication of JP4049487B2 publication Critical patent/JP4049487B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

(57)【要約】 【課題】半田や窒化アルミニウム基板へのクラック発生
のみならず、ボンディングワイヤやメッキの剥離損傷を
著しく少なくすることができる高信頼性回路基板を製造
すること。 【解決手段】窒化アルミニウム基板の表裏面に、Al−
Cu−Mg系合金箔の接合材を介してAl板を配置し、
それを加熱処理して接合体を製造した後エッチングを行
い、窒化アルミニウム基板の一方の面にAl回路、他方
の面にAl放熱板を形成させる方法であって、上記Al
板が、厚み0.2mm以上、圧延率10%以上、かつ冷
間加工後に軟化熱処理が施こされていない圧延Al板で
あり、また上記窒化アルミニウム基板が、X線回折ピー
ク強度比で、3Y23・5Al23×100/AlN≦
3、かつ2Y23・Al23×100/AlN≦1であ
ることを特徴とする回路基板の製造方法。
(57) [Problem] To provide a highly reliable circuit board capable of remarkably reducing not only the occurrence of cracks in a solder or an aluminum nitride substrate but also the peeling damage of bonding wires and plating. An aluminum nitride substrate has Al-
An Al plate is arranged via a joining material of a Cu-Mg alloy foil,
This is a method of forming an Al circuit on one surface of an aluminum nitride substrate and forming an Al radiator plate on the other surface by etching after producing a joined body by heat-treating the joined body.
The plate is a rolled Al plate having a thickness of 0.2 mm or more, a rolling reduction of 10% or more, and not subjected to a softening heat treatment after cold working, and the aluminum nitride substrate has an X-ray diffraction peak intensity ratio of 3Y 2 O 3 · 5Al 2 O 3 × 100 / AlN ≦
3. A method of manufacturing a circuit board, wherein 2Y 2 O 3 .Al 2 O 3 × 100 / AlN ≦ 1.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、パワーモジュール
等に使用される回路基板の製造方法に関する。
The present invention relates to a method for manufacturing a circuit board used for a power module or the like.

【0002】[0002]

【従来の技術】従来、パワーモジュール等に利用される
半導体装置においては、アルミナ、ベリリア、窒化ケイ
素、窒化アルミニウム等のセラミックス基板の表裏面
に、Cu又はAlの回路と放熱板とがそれぞれ形成され
てなる回路基板が用いられている。このような回路基板
は、樹脂基板と金属基板との複合基板ないしは樹脂基板
よりも、高絶縁性が安定して得られることが特長であ
る。
2. Description of the Related Art Conventionally, in a semiconductor device used for a power module or the like, a Cu or Al circuit and a heat sink are formed on the front and back surfaces of a ceramic substrate such as alumina, beryllia, silicon nitride, and aluminum nitride, respectively. Circuit board is used. Such a circuit board is characterized in that high insulation properties can be obtained more stably than a composite board of a resin board and a metal board or a resin board.

【0003】回路及び放熱板の材質が、CuよりもAl
とする利点は、Cuでは、セラミックス基板や半田との
熱膨張差に起因する熱応力の発生が避けられないので、
長期的な信頼性が不十分であるのに対し、Alは、熱伝
導性や電気伝導性ではややCuよりも劣るが、熱応力を
受けても容易に塑性変形するので、応力が緩和され、信
頼性が飛躍的に向上することである。
[0003] The material of the circuit and the heat sink is made of Al rather than Cu.
The advantage is that in Cu, the generation of thermal stress due to the difference in thermal expansion between the ceramic substrate and the solder is inevitable,
While long-term reliability is insufficient, Al is slightly inferior to Cu in thermal conductivity and electrical conductivity, but easily undergoes plastic deformation even when subjected to thermal stress, so the stress is relaxed, The reliability is to be dramatically improved.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、Alの
上記塑性変形は、Alの種類によって著しく異なる。特
に、塑性変形が、回路又は放熱板の一部に集中して発生
すると、メッキやボンディングワイヤの剥離が生じるよ
うになる。これを避けるため、硬度の高いAlを用いる
と、当然応力緩和効果が低下してしまう。従って、応力
緩和効果を十分に維持しながら、回路及び放熱板として
支障なく使用できる程度に塑性変形させるという二律背
反を達成しなければならない課題がある。
However, the above-mentioned plastic deformation of Al significantly differs depending on the type of Al. In particular, when the plastic deformation is concentrated on a part of the circuit or the heat radiating plate, plating or peeling of the bonding wire occurs. In order to avoid this, if Al having high hardness is used, the stress relaxation effect naturally decreases. Therefore, there is a problem that it is necessary to achieve the trade-off between plastic deformation to such an extent that it can be used without trouble as a circuit and a heat sink while sufficiently maintaining the stress relaxation effect.

【0005】この課題を解決するため、従来、メッキ組
成(特開平8−260187号公報)、セラミックス基板
の表面改質(特開平8−260186号公報)、Al板の
粒径規定(特開平8−156330号公報)等、多くの提
案があるが、十分に満足できるものではなかった。すな
わち、半田やセラミックス基板にクラックが発生した
り、ボンディングワイヤやメッキが剥離することがしば
しばあった。
In order to solve this problem, conventionally, a plating composition (Japanese Patent Application Laid-Open No. 8-260187), a surface modification of a ceramic substrate (Japanese Patent Application Laid-Open No. 8-260186), and a particle size regulation of an Al plate (Japanese Patent Application Laid-Open No. 156330), but they have not been fully satisfactory. That is, cracks often occur in the solder or ceramic substrate, and the bonding wires and plating often peel off.

【0006】本発明者は、上記に鑑みて種々検討した結
果、数多くあるAl材料の中から、熱応力による塑性変
形を比較的均一に生じさせやすいAl材料を見いだすと
共に、セラミックス基板を特定の助剤相を持つ窒化アル
ミニウム基板とし、しかも両者を特定成分の接合材を用
いて接合すれば、上記課題を高度に解決できることを見
いだし、本発明を完成させたものである。
As a result of various studies in view of the above, the present inventor has found out of many Al materials, an Al material which is relatively easy to cause plastic deformation due to thermal stress relatively uniformly, and at the same time, has specified a ceramic substrate. The present inventors have found that the above problem can be solved to a high degree by using an aluminum nitride substrate having an agent phase and bonding both using a bonding material of a specific component, thereby completing the present invention.

【0007】本発明の目的は、半田やセラミックス基板
へのクラックの発生のみならず、ボンディングワイヤや
メッキの剥離をも著しく防止した高信頼性の回路基板を
提供することである。
An object of the present invention is to provide a highly reliable circuit board which not only prevents cracks in solder and ceramic substrates but also significantly prevents peeling of bonding wires and plating.

【0008】[0008]

【課題を解決するための手段】すなわち、本発明は、窒
化アルミニウム基板の表裏面に、Al−Cu−Mg系合
金箔の接合材を介してAl板を配置し、それを加熱処理
して接合体を製造してからエッチングを行い、窒化アル
ミニウム基板の一方の面にAl回路、他方の面にAl放
熱板を形成させる方法であって、上記Al板が、厚み
0.2mm以上、圧延率10%以上、かつ冷間加工後に
軟化熱処理が施こされていない圧延Al板であり、また
上記窒化アルミニウム基板が、X線回折ピーク強度比
で、3Y23・5Al23×100/AlN≦3、かつ
2Y23・Al23×100/AlN≦1であることを
特徴とする回路基板の製造方法である。
That is, according to the present invention, an Al plate is arranged on the front and back surfaces of an aluminum nitride substrate via a bonding material of an Al-Cu-Mg alloy foil, and the Al plate is heated and bonded. A method of forming an aluminum circuit on one surface of an aluminum nitride substrate and forming an aluminum radiator on the other surface, wherein the aluminum plate has a thickness of 0.2 mm or more and a rolling reduction of 10 mm. % Or more and not subjected to a softening heat treatment after cold working, and the aluminum nitride substrate has an X-ray diffraction peak intensity ratio of 3Y 2 O 3 .5Al 2 O 3 × 100 / AlN ≦ 3 and 2Y 2 O 3 .Al 2 O 3 × 100 / AlN ≦ 1.

【0009】[0009]

【発明の実施の形態】以下、更に詳しく本発明について
説明する。
BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in more detail.

【0010】本発明の特徴は、窒化アルミニウム基板
と、接合されるAl板の加工度と、接合材とを最適化す
ることによってAl板の塑性変形を比較的均一に発生さ
せて強固に接合させ、もってメッキやボンディングワイ
ヤの剥離と、半田やセラミックス基板のクラックの発生
とを著しく軽減させたことである。
A feature of the present invention is that, by optimizing the workability of an aluminum nitride substrate and an Al plate to be joined and a joining material, plastic deformation of the Al plate is relatively uniformly generated and the aluminum plate is firmly joined. Thus, the peeling of the plating and bonding wires and the generation of cracks in the solder and the ceramic substrate are significantly reduced.

【0011】本発明が講じた第1の手段は、Al板の加
工度の規定であり、圧延率10%以上で冷間加工後に軟
化熱処理の施こされていない圧延Al板を用いたことで
ある。
The first measure taken by the present invention is to define the working ratio of the Al plate, and to use a rolled Al plate which is not subjected to softening heat treatment after cold working at a rolling reduction of 10% or more. is there.

【0012】Al材は、JISに規定してあるだけでも
数十種類の調質レベルがあり、硬度や引張り強さ、成形
性等の物性が異なる。これは、Al材が圧延時の断面減
少率や熱処理によって結晶の配向性や歪み、欠陥等が容
易に変化することによるものである。回路基板に使用す
る際には、高温で接合後にも原料Al板の特性が強く影
響するため、この特性を十分に理解したうえで用いなく
てはならない。従って、例えば、溶融したAl材を直接
接合する溶湯法(例えば、特開平8−208359号公
報等)では、Al材の調質が困難であるので、適切であ
るとはいえない。
The Al material has dozens of temper levels even if it is specified only in JIS, and has different physical properties such as hardness, tensile strength and moldability. This is due to the fact that the orientation, distortion, defects, and the like of the crystal of the Al material are easily changed by the cross-sectional reduction rate during rolling and the heat treatment. When used for a circuit board, the characteristics of the raw material Al plate have a strong effect even after bonding at a high temperature, so that the characteristics must be used after fully understanding these characteristics. Therefore, for example, the molten metal method of directly joining a molten Al material (for example, Japanese Patent Application Laid-Open No. 8-208359) is not suitable because the tempering of the Al material is difficult.

【0013】すなわち、溶湯法によるAl材は、鋳放し
のままであって圧延加工は行われていない。このような
Al材では、熱応力を受けた際に塑性変形が不均一に発
生しやすくなり、部分的な変形が大きくなって、メッキ
やボンディングワイヤの剥離が生じたり、半田クラック
等の損傷が大きくなる。
[0013] That is, the Al material obtained by the molten metal method is as-cast and has not been rolled. In such an Al material, plastic deformation is likely to be unevenly generated when subjected to thermal stress, and partial deformation is increased, causing plating, bonding wire peeling, and damage such as solder cracks. growing.

【0014】一方、詳細なメカニズムは不明であるが、
O材のように焼鈍したAl板や、押し出しのまま又は鋳
放しのままのF材等のように加工度の著しく低いAl板
を用いて作製された回路基板であっても、ヒートショッ
クやヒートサイクルを受けると塑性変形は部分的に集中
し、同様な不都合が生じる。この理由としては、接合材
を用いてAl板を窒化アルミニウム基板に接合するに
は、Alの軟化温度よりも高温で熱処理されるので、接
合材がAl板中に最大0.1mm程度まで拡散すること
と関係していると考えられる。
On the other hand, although the detailed mechanism is unknown,
Even if the circuit board is manufactured using an Al plate annealed like an O material or an Al plate with a very low workability such as an extruded or as-cast F material, heat shock or heat When subjected to the cycle, the plastic deformation is partially concentrated, causing similar disadvantages. The reason for this is that when joining an Al plate to an aluminum nitride substrate using a joining material, heat treatment is performed at a temperature higher than the softening temperature of Al, so that the joining material diffuses into the Al plate up to about 0.1 mm. It is thought to be related to that.

【0015】これに対し、本発明のように、圧延率10
%以上で、しかも冷間加工後に軟化処理の施されていな
い圧延Al板を用いれば、そのものはロールで均一な圧
延が繰り返し行われているので、比較的均一な塑性変形
を起こし、上記不都合は著しく少なくなる。Al板の圧
延率は、大きいほど均一な塑性変形を起こすので好まし
いが、その反面、あまり大きな圧延率の制限は材料の選
択に制限を与え、安定供給性に欠ける。
On the other hand, as in the present invention, a rolling reduction of 10
% Or more, and if a rolled Al plate that has not been subjected to softening treatment after cold working is used, since it is repeatedly rolled uniformly by a roll, relatively uniform plastic deformation is caused. Significantly reduced. The higher the rolling ratio of the Al plate, the more preferable it is because it causes uniform plastic deformation, but on the other hand, an excessively high rolling ratio limits the selection of materials and lacks stable supply.

【0016】本発明で使用されるAl板をJIS記号で
示せば、H12〜H18であり、特に好ましくはH14
〜H18である。但し、JIS記号は引張り強さで規定
したものであるので、これに制限されるものではなく、
例えば、軟化熱処理したH24材を購入して、これを更
に10%以上圧延して使用しても構わない。
If the Al plate used in the present invention is represented by a JIS symbol, it is H12 to H18, particularly preferably H14.
To H18. However, since the JIS symbol is defined by the tensile strength, it is not limited to this.
For example, a H24 material that has been softened and heat-treated may be purchased, and then rolled and used by 10% or more.

【0017】Al板の厚みについては、パワーモジュー
ル用途の大電流に十分対応可能な導電性を確保するこ
と、及び接合材成分が加熱処理中にAl板中に最大0.
1mm程度まで拡散することを考慮し、少なくとも0.
2mmは必要である。
Regarding the thickness of the Al plate, it is necessary to ensure conductivity sufficient to cope with a large current for a power module application, and to ensure that the bonding material has a maximum thickness of 0.1 mm in the Al plate during the heat treatment.
Considering diffusion to about 1 mm, at least 0.
2 mm is required.

【0018】Al板の純度は、高純度である程、電気
的、熱的特性が良好であるが、高純度のものは高価であ
る。通常に入手可能な99.85重量%程度品で十分で
ある。
The higher the purity of the Al plate, the better the electrical and thermal characteristics, but the higher the purity, the higher the price. A commonly available product of about 99.85% by weight is sufficient.

【0019】本発明が講じた第2の手段は窒化アルミニ
ウム基板の規定である。本発明で使用される窒化セラミ
ックス基板は、Y23を焼結助剤として焼成されたもの
であり、その表面のCuKαによるX線回折ピーク強度
比が、3Y23・5Al23×100/AlN≦3、か
つ2Y23・Al23×100/AlN≦1であるもの
である。このような表面特性を有する窒化アルミニウム
基板は、酸化処理等の煩雑な表面処理を施さなくとも、
後述するAl−Cu−Mg系合金箔を用いて、上記Al
板と十分に強い強度で接合させることができる。窒化ア
ルミニウム基板の熱伝導率としては、130W/mK以
上が好ましい。
A second measure taken by the present invention is the provision of an aluminum nitride substrate. The nitrided ceramic substrate used in the present invention is a substrate fired using Y 2 O 3 as a sintering aid, and the surface has an X-ray diffraction peak intensity ratio due to CuKα of 3Y 2 O 3 .5Al 2 O 3. × 100 / AlN ≦ 3 and 2Y 2 O 3 .Al 2 O 3 × 100 / AlN ≦ 1. The aluminum nitride substrate having such surface characteristics can be used without performing complicated surface treatment such as oxidation treatment.
Using the Al-Cu-Mg alloy foil described below,
It can be joined with a board with sufficiently strong strength. The thermal conductivity of the aluminum nitride substrate is preferably 130 W / mK or more.

【0020】窒化アルミニウム基板表面の助剤相は、接
合性に強く影響し、2Y23・Al 23が多いと接合が
困難となる。一方、3Y23・5Al23の多い窒化ア
ルミニウム基板では熱伝導率が低くパワーモジュール用
としては不適切である。このようなことから、本発明に
おいては、両者の助剤相が上記のように制限される。
The auxiliary phase on the surface of the aluminum nitride substrate
Strongly affects compatibility, 2YTwoOThree・ Al TwoOThreeIf there are many joints
It will be difficult. On the other hand, 3YTwoOThree・ 5AlTwoOThreeMostly nitrided
Low thermal conductivity of luminium substrate for power modules
As inappropriate. Therefore, the present invention
In this case, both auxiliary phases are restricted as described above.

【0021】窒化アルミニウム基板の表面特性の調整
は、原料窒化アルミニウム粉中のAl 23分とY23
組成比、(B)脱脂後焼成前までの増加酸素量、(C)
焼成温度等によって行うことができる。例えば、2Y2
3・Al23が多い場合には、相対的にAl23分を
増やせば良いので、酸素量の多い窒化アルミニウム粉末
原料を用いるか、Al23を添加してY23分を減ら
す。一方、Y23・Al23が多い場合には、Y23
添加量を減らすか、焼成温度を下げる。その他、脱脂を
空気中で行えばAl23分を増加させることができる。
Adjustment of surface characteristics of aluminum nitride substrate
Represents Al in the raw aluminum nitride powder TwoOThreeMinute and YTwoOThreeMinute
Composition ratio, (B) increased oxygen amount before degreasing and before firing, (C)
It can be performed depending on the firing temperature or the like. For example, 2YTwo
OThree・ AlTwoOThreeWhen there are many, relatively AlTwoOThreeMinutes
Aluminum nitride powder with high oxygen content
Use raw material or AlTwoOThreeTo add YTwoOThreeReduce minutes
You. On the other hand, YTwoOThree・ AlTwoOThreeIf there are many, YTwoOThreeof
Reduce the amount added or lower the firing temperature. In addition, degreasing
Al in airTwoOThreeMinutes can be increased.

【0022】本発明で講じられた第3の手段は、窒化ア
ルミニウム基板と圧延Al板とを、Al−Cu−Mg系
合金箔の接合材を用いて接合したことである。この理由
は、Al−Cu−Mg系合金は、高力Al合金や耐熱A
l合金として広く普及しており、箔化も容易であるので
コスト的に有利であること、また、Al−Cu−Mg系
合金は、SiやGeに比べてCu、MgがAl中に均一
に拡散しやすいため、局部的な溶融が生じたり、余分な
接合材が押し出されてはみ出しが生じ難くなり、比較的
短時間で安定した接合が可能となること、等による。
A third means adopted in the present invention is that an aluminum nitride substrate and a rolled Al plate are joined by using an Al-Cu-Mg alloy foil joining material. The reason is that the Al-Cu-Mg based alloy is a high-strength Al alloy or heat-resistant A
It is widely used as an alloy and is easy to make into a foil, which is advantageous in terms of cost. In addition, the Al-Cu-Mg-based alloy has Cu and Mg more uniformly in Al than Si or Ge. Due to easy diffusion, local melting occurs, excess bonding material is extruded and extrusion does not easily occur, and stable bonding can be performed in a relatively short time.

【0023】Al−Cu−Mg系合金箔の厚みは、0.
015〜0.040mmであることが好ましい。厚みが
0.015mm未満では、接合が困難となり、0.04
0mmをこえると、Cu、Mgが拡散して生じるAl中
の硬化層が拡がるので、熱履歴を受けた際に信頼性が低
下する原因となる。Al−Cu−Mg系合金箔は、窒化
アルミニウム基板側、Al板側のどちらに配置しても良
く、また、あらかじめAl板とクラッド化しておくこと
もできる。
The thickness of the Al—Cu—Mg based alloy foil is set to 0.1.
It is preferably from 015 to 0.040 mm. If the thickness is less than 0.015 mm, joining becomes difficult, and 0.04 mm or less.
If the thickness exceeds 0 mm, the hardened layer in Al generated by diffusion of Cu and Mg expands, which causes a decrease in reliability when subjected to a thermal history. The Al-Cu-Mg-based alloy foil may be disposed on either the aluminum nitride substrate side or the Al plate side, or may be clad with the Al plate in advance.

【0024】本発明の回路基板の製造方法においては、
まず、Al−Cu−Mg系合金箔は、窒化アルミニウム
基板とAl板の間に配置され、熱処理して接合体が製造
される。接合は、窒素等の非酸化性雰囲気又は真空雰囲
気下、温度580〜650℃で10〜100分間程度保
持することによって行われる。この場合、窒化アルミニ
ウム基板面に対して垂直方向から15〜100kgf/
cm2、特に20〜80kgf/cm2の圧力をかけるこ
とは好ましいことであり、これによって、十分な接合を
安定して得ることができ、しかもAl板の塑性変形が比
較的均一に生じる。加圧は、積層体に重しを載せる、治
具等を用いて機械的に挟み込む等によって行うことがで
きる。
In the method for manufacturing a circuit board according to the present invention,
First, an Al-Cu-Mg-based alloy foil is disposed between an aluminum nitride substrate and an Al plate, and heat-treated to produce a joined body. The bonding is performed by holding the substrate at a temperature of 580 to 650 ° C. for about 10 to 100 minutes in a non-oxidizing atmosphere such as nitrogen or a vacuum atmosphere. In this case, from 15 to 100 kgf /
It is preferable to apply a pressure of 2 cm 2 , particularly 20 to 80 kgf / cm 2 , so that sufficient joining can be stably obtained, and plastic deformation of the Al plate occurs relatively uniformly. Pressing can be performed by placing a weight on the laminate, mechanically sandwiching it with a jig or the like, or the like.

【0025】本発明においては、Al板のかわりにAl
板のパターンを、またAl−Cu−Mg系合金箔のかわ
りにそのパターンを用いて加熱接合することもできる。
この場合は、後工程のエッチング処理を省略できること
が多い。
In the present invention, instead of the Al plate, Al
The pattern of the plate may be heated and joined using the pattern instead of the Al-Cu-Mg alloy foil.
In this case, the post-etching process can be omitted in many cases.

【0026】次いで、接合体はエッチングされ、所望形
状の回路と放熱板が窒化アルミニウム基板表裏面に形成
される。エッチングは、通常のレジストを用い、通常の
工程で行うことができる。また、形成された回路及び放
熱板にはメッキ等の表面処理が必要に応じて行わる。
Next, the joined body is etched, and a circuit having a desired shape and a heat sink are formed on the front and back surfaces of the aluminum nitride substrate. The etching can be performed by a normal process using a normal resist. Further, a surface treatment such as plating is performed on the formed circuit and the heat radiation plate as needed.

【0027】[0027]

【実施例】以下、実施例と比較例をあげて更に具体的に
本発明を説明する。
The present invention will be described more specifically below with reference to examples and comparative examples.

【0028】実施例1〜3 比較例1〜5 用いた窒化アルミニウム基板は、いずれも大きさ2イン
チ角であり、レーザーフラッシュ法による熱伝導率(n
=3の平均)、3点曲げ強度(n=5の平均)、X線回
折による助剤相(n=3の平均)を表1に示した。
Examples 1 to 3 Comparative Examples 1 to 5 All of the aluminum nitride substrates used were 2 inches square and had a thermal conductivity (n
Table 3 shows the three-point bending strength (average of n = 5) and the auxiliary phase (average of n = 3) by X-ray diffraction.

【0029】窒化アルミニウム基板の表裏面に接合材を
介してAl板を配置し、カーボン製押し板をねじ込みで
きる治具を用いて窒化アルミニウム基板に対して垂直方
向に均等に加圧しながら熱処理を行った。用いたAl板
及び接合材を表2に示す。Al材は、冷間加工後に軟化
処理の施されていないものを用いた。接合条件を表3に
示す。
An aluminum plate is placed on the front and back surfaces of the aluminum nitride substrate via a bonding material, and heat treatment is performed while uniformly pressing the aluminum nitride substrate in the vertical direction using a jig into which a carbon-made pressing plate can be screwed. Was. Table 2 shows the Al plates and the joining materials used. The Al material used was not softened after cold working. Table 3 shows the joining conditions.

【0030】得られた接合体にエッチングレジストをス
クリーン印刷し、FeCl3液でエッチングした。次い
で、レジストを剥離した後、無電解Ni−Pメッキを3
μm施して回路基板を製造した。
An etching resist was screen-printed on the obtained joined body, and was etched with a FeCl 3 solution. Next, after the resist was stripped, electroless Ni-P plating was performed for 3 hours.
μm to produce a circuit board.

【0031】回路基板にAlワイヤーを超音波でボンデ
ィングした後、中央部に13mm角のSiチップを半田
付けした。これを10枚づつヒートサイクル試験を行っ
た。ヒートサイクル試験は、−40℃×30分→室温×
10分→125℃×30分→室温×10分を1サイクル
として3000サイクル実施した。ヒートサイクル試験
後、ボンディングワイヤーの剥離や半田クラック等の損
傷の有無を調べた後、回路及び放熱板を塩酸で溶解し、
窒化アルミニウム基板のクラックの有無を観察した。そ
れらの結果を表4に示す。
After bonding an Al wire to the circuit board by ultrasonic waves, a 13 mm square Si chip was soldered to the center. This was subjected to a heat cycle test for every ten sheets. Heat cycle test: -40 ° C x 30 minutes → room temperature x
3000 cycles were performed with 10 minutes → 125 ° C. × 30 minutes → room temperature × 10 minutes as one cycle. After the heat cycle test, after examining for damage such as peeling of bonding wires and solder cracks, dissolve the circuit and heat sink with hydrochloric acid,
The presence or absence of cracks in the aluminum nitride substrate was observed. Table 4 shows the results.

【0032】[0032]

【表1】 [Table 1]

【0033】[0033]

【表2】 [Table 2]

【0034】[0034]

【表3】 [Table 3]

【0035】[0035]

【表4】 [Table 4]

【0036】表1〜4から明らかなように、本発明の実
施例は、いずれもヒートサイクル試験3000サイクル
後においてもボンディングワイヤやメッキの損傷がな
く、半田や窒化アルミニウム基板へのクラック発生も著
しく少なかった。これに対して、本発明と異なる接合材
を用いた比較例1や、窒化アルミニウム基板が本発明の
範囲外である比較例4、5では、ヒートサイクル後に回
路パターンの剥離が生じた。また、Al材が本発明の範
囲内にない比較例3では、ボンディングワイヤやメッキ
の剥離が認められ、半田や窒化アルミニウム基板にクラ
ックが発生するなど、高信頼性回路基板としては、不十
分なものであった。
As is clear from Tables 1 to 4, in each of the examples of the present invention, even after 3000 cycles of the heat cycle test, there was no damage to the bonding wires and plating, and cracks were significantly generated in the solder and aluminum nitride substrate. There were few. On the other hand, in Comparative Example 1 using a bonding material different from the present invention and Comparative Examples 4 and 5 in which the aluminum nitride substrate was out of the range of the present invention, the circuit pattern was peeled off after the heat cycle. In Comparative Example 3 in which the Al material was not within the scope of the present invention, peeling of the bonding wires and plating was observed, and cracks occurred in the solder and aluminum nitride substrates. Was something.

【0037】[0037]

【発明の効果】本発明によれば、半田や窒化アルミニウ
ム基板へのクラック発生のみならず、ボンディングワイ
ヤやメッキの剥離損傷を著しく少なくすることができる
高信頼性回路基板を製造することができる。
According to the present invention, it is possible to manufacture a high-reliability circuit board which not only generates cracks in the solder or aluminum nitride substrate but also significantly reduces peeling damage of bonding wires and plating.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 寺野 克典 福岡県大牟田市新開町1 電気化学工業株 式会社大牟田工場内 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Katsunori Terano 1 Shinkaicho, Omuta-shi, Fukuoka Prefecture Inside the Omuta Plant of Denki Kagaku Kogyo Co., Ltd.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 窒化アルミニウム基板の表裏面に、Al
−Cu−Mg系合金箔の接合材を介してAl板を配置
し、それを加熱処理して接合体を製造した後エッチング
を行い、窒化アルミニウム基板の一方の面にAl回路、
他方の面にAl放熱板を形成させる方法であって、上記
Al板が、厚み0.2mm以上、圧延率10%以上、か
つ冷間加工後に軟化熱処理が施こされていない圧延Al
板であり、また上記窒化アルミニウム基板が、X線回折
ピーク強度比で、3Y23・5Al23×100/Al
N≦3、かつ2Y23・Al23×100/AlN≦1
であることを特徴とする回路基板の製造方法。
An aluminum nitride substrate is provided with Al
-Place an Al plate via a joining material of a Cu-Mg alloy foil, heat-treat it to produce a joined body, perform etching, and perform an Al circuit on one surface of the aluminum nitride substrate;
A method of forming an Al heat radiating plate on the other surface, wherein the Al plate has a thickness of 0.2 mm or more, a rolling reduction of 10% or more, and is not subjected to softening heat treatment after cold working.
And the aluminum nitride substrate is 3Y 2 O 3 .5Al 2 O 3 × 100 / Al in X-ray diffraction peak intensity ratio.
N ≦ 3 and 2Y 2 O 3 .Al 2 O 3 × 100 / AlN ≦ 1
A method for manufacturing a circuit board, comprising:
JP22960799A 1999-08-16 1999-08-16 Circuit board manufacturing method Expired - Lifetime JP4049487B2 (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003090277A1 (en) * 2002-04-19 2003-10-30 Mitsubishi Materials Corporation Circuit board, process for producing the same and power module
US7323255B2 (en) * 2004-09-01 2008-01-29 Kabushiki Kaisha Toyota Jidoshokki Method of producing base plate circuit board, base plate for circuit board, and circuit board using the base plate
JP2011109000A (en) * 2009-11-20 2011-06-02 Mitsubishi Materials Corp Method of manufacturing substrate for power module with heat sink
CN104402488A (en) * 2014-11-13 2015-03-11 合肥圣达电子科技实业公司 Copper pour use aluminum nitride substrate pretreatment method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003090277A1 (en) * 2002-04-19 2003-10-30 Mitsubishi Materials Corporation Circuit board, process for producing the same and power module
US7128979B2 (en) 2002-04-19 2006-10-31 Mitsubishi Materials Corporation Circuit board, method of producing same, and power module
CN100364078C (en) * 2002-04-19 2008-01-23 三菱麻铁里亚尔株式会社 Circuit board, manufacturing method thereof, and power module
US7323255B2 (en) * 2004-09-01 2008-01-29 Kabushiki Kaisha Toyota Jidoshokki Method of producing base plate circuit board, base plate for circuit board, and circuit board using the base plate
JP2011109000A (en) * 2009-11-20 2011-06-02 Mitsubishi Materials Corp Method of manufacturing substrate for power module with heat sink
CN104402488A (en) * 2014-11-13 2015-03-11 合肥圣达电子科技实业公司 Copper pour use aluminum nitride substrate pretreatment method

Also Published As

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