JPH01301866A - Formation of metallic layer on aluminum nitride surface - Google Patents
Formation of metallic layer on aluminum nitride surfaceInfo
- Publication number
- JPH01301866A JPH01301866A JP2102588A JP2102588A JPH01301866A JP H01301866 A JPH01301866 A JP H01301866A JP 2102588 A JP2102588 A JP 2102588A JP 2102588 A JP2102588 A JP 2102588A JP H01301866 A JPH01301866 A JP H01301866A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- aluminum nitride
- layer
- plating
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims description 32
- 230000015572 biosynthetic process Effects 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 238000007747 plating Methods 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 17
- 238000010438 heat treatment Methods 0.000 claims abstract description 16
- 230000003746 surface roughness Effects 0.000 claims abstract description 5
- 238000005530 etching Methods 0.000 claims abstract description 4
- 239000002253 acid Substances 0.000 claims abstract description 3
- 239000003513 alkali Substances 0.000 claims abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 50
- 239000010410 layer Substances 0.000 claims description 43
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 28
- 229910052802 copper Inorganic materials 0.000 claims description 27
- 239000010949 copper Substances 0.000 claims description 27
- 229910052759 nickel Inorganic materials 0.000 claims description 25
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 239000002344 surface layer Substances 0.000 claims description 2
- 239000002585 base Substances 0.000 claims 1
- 230000000630 rising effect Effects 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 4
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 4
- 238000005476 soldering Methods 0.000 abstract description 4
- 229910000679 solder Inorganic materials 0.000 abstract description 3
- 239000000853 adhesive Substances 0.000 abstract 2
- 230000001070 adhesive effect Effects 0.000 abstract 2
- 239000000919 ceramic Substances 0.000 description 8
- 239000007864 aqueous solution Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000011889 copper foil Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- QDWJUBJKEHXSMT-UHFFFAOYSA-N boranylidynenickel Chemical compound [Ni]#B QDWJUBJKEHXSMT-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000011225 non-oxide ceramic Substances 0.000 description 1
- 229910052575 non-oxide ceramic Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
- C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemically Coating (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
Description
【発明の詳細な説明】
〔分野の概要〕
本発明はセラミックス絶縁基板の表面に金属層を形成す
る方法に係り、特に窒化アルミニウム基板表面にメッキ
技術を用いて下地にニッケル層を、表面に２μｍ以上の
厚付銅層を形成する金属層を表面に形成した窒化アルミ
ニウム基板の製造方法に関するものである。[Detailed Description of the Invention] [Overview of the Field] The present invention relates to a method of forming a metal layer on the surface of a ceramic insulating substrate, and in particular, a nickel layer is formed on the surface of an aluminum nitride substrate using a plating technique, and a nickel layer is formed on the surface with a thickness of 2 μm. The present invention relates to a method of manufacturing an aluminum nitride substrate on which a metal layer forming a thick copper layer is formed.
この種のセラミックス基板に金属層を形成する技術は特
に新しいものではないが、例えばセラミックス基板を脱
脂した後直接無電解銅メッキを施すか、或いは無電解ニ
ッケルメッキを施した後、銅メッキを施すという方法が
一般に知られている。The technology of forming a metal layer on this type of ceramic substrate is not particularly new, but for example, electroless copper plating is applied directly after degreasing the ceramic substrate, or electroless nickel plating is applied and then copper plating is applied. This method is generally known.
しかし、これらの方法を用いた場合、銅層の厚みが２μ
ｍ以下の場合は有効であるが、セラミックス基板と金属
層との接着部が特に２μｍ以上の銅層を厚付した場合耐
熱性に問題があり、半田付けした際、或いは電子部品を
実装したときに、密着強度の低下や金属層の剥離や、或
いは銅層に微妙なふくれを生じ、信頼性に問題を生じて
いた。また、セラミックス基板と金属層との間の密着強
度の確保という点で、非酸化物系セラミックスは金属と
のぬれ性が悪く、窒化アルミニウム基板への金属接合の
場合も、同様にこの理由からメッキによるメタライズ技
術を用いて、しかも、２μｍ以上の銅層の厚付を安定し
て行える手法の確立はいまだない。一方、銅の箔を用い
て銅層の形成を行う場合、セラミックス基板上に銅回路
基板を直接接合する方法が開発されているが、セラミッ
クス基板と金属層との中間に酸化物層、或いはろう材等
を介在させるため、高熱伝導性基板としての用途に対し
て、熱伝導性を損なうこと、製造工程が複雑であること
、銅箔を平坦に接合するための歩留りが悪いなどの欠点
があった。However, when using these methods, the thickness of the copper layer is 2μ
It is effective when the bonding area between the ceramic substrate and the metal layer is thicker than 2 μm, but there is a problem with heat resistance when soldering or when electronic components are mounted. In addition, reliability problems were caused by a decrease in adhesion strength, peeling of the metal layer, or slight blisters in the copper layer. In addition, in terms of securing the adhesion strength between the ceramic substrate and the metal layer, non-oxide ceramics have poor wettability with metal, and for this reason, plating is also difficult in the case of metal bonding to aluminum nitride substrates. No method has yet been established that can stably form a copper layer with a thickness of 2 μm or more using the metallization technology. On the other hand, when forming a copper layer using copper foil, a method has been developed in which a copper circuit board is directly bonded onto a ceramic substrate. Because of the intervening materials, there are drawbacks to using it as a highly thermally conductive substrate, such as loss of thermal conductivity, complicated manufacturing process, and poor yield due to flat bonding of copper foil. Ta.
以下余白
〔発明の目的〕
本発明は窒化アルミニウム基板上にニッケル、及び厚み
２μｍ以上の銅からなる金属層をメッキにより形成し、
セラミックス基板と金属層との密着強度に優れ、耐熱性
も良好で半田付は作業時などにふくれ等の欠点を生じな
い、窒化アルミニウム基板と、ニッケル、或いは銅との
結合体を提供することを目的とする。Blank space below [Object of the invention] The present invention forms a metal layer made of nickel and copper with a thickness of 2 μm or more on an aluminum nitride substrate by plating,
We aim to provide a combination of an aluminum nitride substrate and nickel or copper that has excellent adhesion strength between the ceramic substrate and the metal layer, has good heat resistance, and does not cause defects such as blistering during soldering. purpose.
本発明は窒化アルミニウム表面に優れた密着強度、及び
耐熱性を有する金属層を得るための方法であり、窒化ア
ルミニウム基板を水酸化ナトリウム、または水酸化カリ
ウムのアルカリ、或いは１０％濃度の弗化水素水と、１
０％濃度の硝酸水溶液を１＝１に混合した酸によるエツ
チングによって、表面粗さＲａ＝ ０．５ないし５．０
μｍに荒らし、さらに１ないし２０μｍの厚さに一般市
販のニッケルリンによる無電解ニッケルメッキを施し熱
処理を行う。The present invention is a method for obtaining a metal layer having excellent adhesion strength and heat resistance on an aluminum nitride surface. water and 1
Surface roughness Ra = 0.5 to 5.0 by etching with acid mixed with 0% concentration nitric acid aqueous solution in a ratio of 1 = 1.
It is roughened to a thickness of 1 μm, electroless nickel plated with commercially available nickel phosphorus to a thickness of 1 to 20 μm, and heat treated.
次に電解銅メッキを１ないし５００μｍ施した後、さら
に熱処理を行う。Next, electrolytic copper plating is applied to a thickness of 1 to 500 μm, followed by further heat treatment.
即ち、本発明は 窒化アルミニウム基板表面に下地にニ
ッケルと表面層に銅からなる金属層を形成する方法にお
いて、窒化アルミニウム基板の表面をアルカリまたは酸
を用いて表面粗さＲａを０．５ないし５．０μｍにエツ
チングを施し、前記窒化アルミニウム基板上に１ないし
２０μｍの厚さで通常方法による無電解ニッケルメッキ
を施し、前記ニッケル層と前記窒化アルミニウム基板を
不活性雰囲気にて１５０℃ないし５００℃で加熱し、熱
処理を施した前記ニッケル層上に、２μｍ以上の厚さで
銅メッキを施し、前記金属層を非酸化性雰囲気中におい
て２００℃／時間以下の昇温、及び降温速度で２５０な
いし３５０℃の温度で加熱して作る下地にニッケル層１
表面に金属層を形成している。That is, the present invention provides a method for forming a metal layer consisting of nickel as a base and copper as a surface layer on the surface of an aluminum nitride substrate. Electroless nickel plating is applied to the aluminum nitride substrate to a thickness of 1 to 20 μm using a conventional method, and the nickel layer and the aluminum nitride substrate are heated at 150° C. to 500° C. in an inert atmosphere. Copper plating is applied to a thickness of 2 μm or more on the heated and heat-treated nickel layer, and the metal layer is heated at a rate of 200° C./hour or less and a cooling rate of 250 to 350° C. in a non-oxidizing atmosphere. Nickel layer 1 on the base made by heating at a temperature of °C
A metal layer is formed on the surface.
本発明による窒化アルミニウム基板表面への金属層の形
成方法の実施例につき説明する。An example of the method for forming a metal layer on the surface of an aluminum nitride substrate according to the present invention will be described.
寸法が５０ｍｍ Ｘ ５０ｍｍ Ｘ Ｏ，６３５ｍｍ、
表面粗さがＲａ＝０．６５μｍ、純度が９９％以上の窒
化アルミニウム基板を次の２つの条件でエツチングを行
った。Dimensions are 50mm x 50mm x O, 635mm,
An aluminum nitride substrate with a surface roughness of Ra=0.65 μm and a purity of 99% or more was etched under the following two conditions.
第１の条件： Ｉ Ｎ ＮａＯＨ水溶液を４０℃に加温
したちで４０分浸積しＲａ＝ ２．４μｍとした。First condition: I N NaOH aqueous solution was heated to 40° C. and immersed for 40 minutes to give Ra = 2.4 μm.
第２の条件二重量比で１０％弗化水素水溶液、１０％Ｈ
ＮＯ３の１：１水溶液に３分間浸種し、Ｒａ＝０．７μ
ｍとした。Second condition: 10% hydrogen fluoride aqueous solution, 10% H
Soaked in 1:1 aqueous solution of NO3 for 3 minutes, Ra=0.7μ
It was set as m.
第１の条件、及び第２の条件で窒化アルミニウム基板表
面にエツチングを施した後、表面に無電解ニッケルメッ
キ、本例ではニッケルリンを通常行なわれている方法で
１５μｍ施した後、窒素ガス雰囲気中で保持条件２５０
℃で２時間、昇温降温条件を３００℃／時で熱処理を行
った。次に重量比で１０％Ｈ２ＳＯ４水溶液にて表面活
性化を行ない、一般に用いられている硫酸銅メッキ液を
用いて２Ａ／ｄｍ２の電流密度で２００μｍの厚さに電
気銅メッキを施した。次に窒素ガス雰囲気中において２
５℃／時の昇降温速度で熱処理を行った。その際の最高
温度は３５０℃で、２時間の保持を行った。得られた表
面に金属層を施した窒化アルミニウム基板に非酸化ガス
の雰囲気、本実施例では水素ガス雰囲気中で３５０℃の
条件で、シリコンチップを高温半田にて半田付けした。After etching the surface of the aluminum nitride substrate under the first and second conditions, electroless nickel plating, in this example nickel phosphorus, is applied to the surface to a thickness of 15 μm using a commonly used method, and then the substrate is etched in a nitrogen gas atmosphere. Holding condition 250 in
Heat treatment was carried out at 300° C./hour for 2 hours at 300° C./hour. Next, the surface was activated with a 10% by weight H2SO4 aqueous solution, and electrolytic copper plating was applied to a thickness of 200 μm using a commonly used copper sulfate plating solution at a current density of 2 A/dm2. Next, in a nitrogen gas atmosphere,
Heat treatment was performed at a temperature increase/decrease rate of 5° C./hour. The maximum temperature at that time was 350°C, and the temperature was maintained for 2 hours. A silicon chip was soldered to the obtained aluminum nitride substrate with a metal layer on its surface using high-temperature solder at 350° C. in a non-oxidizing gas atmosphere, in this example a hydrogen gas atmosphere.
その結果、形成された金属層は窒化アルミニウム基板よ
り剥離、ふくれなどの欠陥を生じることもなく、半田付
は性にも問題を生じることはなかった。また、垂直引っ
張り強度も１、５ｋｇ／ｍｍ２以上で実用上問題のない
密着強度が得られた。尚、上記実施例では無電解ニッケ
ルメッキはニッケル、リンであるがニッケルボロンでも
よい。また、無電解ニッケルメッキの厚さは１０ないし
２０μｍが好適であった。As a result, the formed metal layer did not cause any defects such as peeling or blistering from the aluminum nitride substrate, and there were no problems in soldering properties. Further, the vertical tensile strength was 1.5 kg/mm2 or more, and adhesion strength without any practical problems was obtained. In the above embodiments, the electroless nickel plating is nickel and phosphorus, but nickel boron may also be used. Further, the thickness of the electroless nickel plating was preferably 10 to 20 μm.
前述した実施例と同様な手順により窒化アルミニウム基
板表面の粗さ、無電解ニッケルメッキの厚さ、無電解ニ
ッケルメッキ後の熱処理温度、ＩＲメッキの厚さ、銅メ
ッキ後の熱処理温度、昇降温度の条件等の銅層を形成す
る条件と、製作後の銅層の窒化アルミニウム基板への密
着強度と、金属層の表面を溶融半田でぬらしたときのふ
くれ、はがれの発生による歩留りを耐熱性歩留りとし、
各製造条件と特性値の結果を表−１に示す。表−１に示
す値は
１、窒化アルミニウム基板表面粗さは０．５ないし５．
０μｍがよく、表面を粗しすぎると基板の機械的強度を
弱くする。The roughness of the aluminum nitride substrate surface, the thickness of electroless nickel plating, the heat treatment temperature after electroless nickel plating, the thickness of IR plating, the heat treatment temperature after copper plating, and the elevation temperature were determined by the same procedure as in the above-mentioned example. The heat resistance yield is determined by the conditions for forming the copper layer, the adhesion strength of the copper layer to the aluminum nitride substrate after fabrication, and the yield due to blistering and peeling when the surface of the metal layer is wetted with molten solder. ,
Table 1 shows the results of each manufacturing condition and characteristic values. The values shown in Table 1 are 1, and the surface roughness of the aluminum nitride substrate is 0.5 to 5.
A value of 0 μm is preferable; if the surface is too rough, the mechanical strength of the substrate will be weakened.
２、無電解ニッケルメッキの厚さは１５ないし２０μｍ
がよい。2. The thickness of electroless nickel plating is 15 to 20 μm.
Good.
３、無電解ニッケルメッキ後の窒素ガス雰囲気中におけ
る熱処理は２５０ないし５００℃でよい。3. Heat treatment in a nitrogen gas atmosphere after electroless nickel plating may be performed at 250 to 500°C.
４、銅メッキの厚さは２μｍでも５００μ■でもよい。4. The thickness of copper plating may be 2 μm or 500 μm.
５、銅メッキ後の熱処理は２５０ないし３５０℃の範囲
が好ましい。5. Heat treatment after copper plating is preferably in the range of 250 to 350°C.
以上のべたごとく本発明による窒化アルミニウム基板表
面への金属層の形成は、窒化アルミニウム基板とニッケ
ル、及び厚み２μｍ以上の銅からなる金属層との形成方
法において、特に、数十μｍ以上の銅層を形成した場合
でも、窒化アルミニウム基板のエツチングと所定の熱処
理とを施すことにより優れた密着強度を確保し、金属層
の剥離、ふくれ等の欠陥を生じない、しかも、還元雰囲
気でも半田実装可能な優れた耐熱性を有する銅の金属層
を有する窒化アルミニウム基板をメッキにより得ること
ができた。As described above, the formation of a metal layer on the surface of an aluminum nitride substrate according to the present invention is a method for forming an aluminum nitride substrate, nickel, and a metal layer made of copper with a thickness of 2 μm or more, in particular, a copper layer of several tens of μm or more. Even when the aluminum nitride substrate is etched and subjected to a prescribed heat treatment, excellent adhesion strength is ensured, and defects such as peeling and blistering of the metal layer do not occur even when the aluminum nitride substrate is formed. Furthermore, it can be soldered mounted even in a reducing atmosphere. An aluminum nitride substrate having a copper metal layer with excellent heat resistance could be obtained by plating.
これにより、パワーモジュール基板等大電力用の基板を
高熱伝導性セラミックスである窒化アルミニウム基板で
容易に形成でき、銅回路の形成も従来の銅箔を用いる方
法に比べ、安価にかつ複雑な形状のものを容易に形成で
き、また、スルーホール基板としての用途への適用も可
能な、表面に信頼性の高い銅層を持つ窒化アルミニウム
基板を提供できるようになった。As a result, high-power substrates such as power module substrates can be easily formed using aluminum nitride substrates, which are highly thermally conductive ceramics, and copper circuits can be formed at a lower cost and with complex shapes compared to the conventional method using copper foil. It has now become possible to provide an aluminum nitride substrate with a highly reliable copper layer on the surface, which can be easily formed and can also be used as a through-hole substrate.
特許出願人 東北金属工業株式会社
手続補正書（方式）７゜
昭和６３年特許願第２１０２５号
力１ン専ガイツヤ
４、補正命令の日付
平成１年７月４日
５、補正により増加する請求項の数 「なし」、補正の
内容
「発明の名称を窒化アルミニウム表面に金属層を形成す
る方法と補正する。」Patent Applicant: Tohoku Metal Industry Co., Ltd. Procedural Amendment (Method) 7゜1986 Patent Application No. 21025 Power 1 Special Edition 4, Date of Amendment Order July 4, 1999 5, Claims Increased by Amendment Number of ``None'', content of amendment ``The name of the invention is amended to be a method for forming a metal layer on the surface of aluminum nitride.''
Claims (1)
ケルと表面層に銅からなる金属層を形成する方法におい
て、窒化アルミニウムの表面をアルカリまたは酸を用い
て表面粗さＲａを０．５ないし５．０μｍにエッチング
を施し、前記基板上に１ないし２０μｍの厚さで無電解
ニッケルメッキを施し、前記ニッケル層と前記窒化アル
ミニウム基板を不活性雰囲気中において１５０℃ないし
５００℃で加熱して熱処理を施し、前記ニッケル層上に
、２μｍ以上、５００μｍ以下の厚さで銅メッキを行な
い、前記金属層と前記基板とを非酸化性雰囲気中におい
て、２００℃／時間以下の昇温、及び降温速度で、２５
０ないし３５０℃の温度で加熱して作る、下地にニッケ
ル層、表面に銅層の金属層を形成することを特徴とする
窒化アルミニウム（ＡＩＮ）基板表面に金属層を形成す
る方法。In a method of forming a metal layer consisting of nickel as a base and copper as a surface layer on the surface of an aluminum nitride (AIN) substrate, the surface of aluminum nitride is treated with an alkali or acid to a surface roughness Ra of 0.5 to 5.0 μm. etching, electroless nickel plating to a thickness of 1 to 20 μm on the substrate, and heat treatment by heating the nickel layer and the aluminum nitride substrate at 150° C. to 500° C. in an inert atmosphere, Copper plating is performed on the nickel layer to a thickness of 2 μm or more and 500 μm or less, and the metal layer and the substrate are heated and cooled at a temperature rising and falling rate of 200° C./hour or less in a non-oxidizing atmosphere.
A method for forming a metal layer on the surface of an aluminum nitride (AIN) substrate, characterized by forming a metal layer by heating at a temperature of 0 to 350° C. and having a nickel layer on the base and a copper layer on the surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2102588A JP2606716B2 (en) | 1988-01-29 | 1988-01-29 | Method of forming metal layer on aluminum nitride surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2102588A JP2606716B2 (en) | 1988-01-29 | 1988-01-29 | Method of forming metal layer on aluminum nitride surface |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01301866A true JPH01301866A (en) | 1989-12-06 |
| JP2606716B2 JP2606716B2 (en) | 1997-05-07 |
Family
ID=12043478
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2102588A Expired - Fee Related JP2606716B2 (en) | 1988-01-29 | 1988-01-29 | Method of forming metal layer on aluminum nitride surface |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2606716B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5679469A (en) * | 1994-08-02 | 1997-10-21 | Sumitomo Electric Industries, Ltd. | Metallized ceramic substrate having smooth plating layer and method for producing the same |
| EP1482544A4 (en) * | 2002-03-06 | 2006-09-27 | Sumitomo Electric Industries | EMBASE AND SEMICONDUCTOR DEVICE |
| US7582125B2 (en) * | 2004-11-26 | 2009-09-01 | The Gillette Company | Method of forming a nickel layer on the cathode casing for a zinc-air cell |
| CN115410925B (en) * | 2022-09-22 | 2023-08-11 | 江苏富乐华半导体科技股份有限公司 | Method for improving heat-resistant cycle reliability of aluminum nitride coated aluminum packaging lining plate |
-
1988
- 1988-01-29 JP JP2102588A patent/JP2606716B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5679469A (en) * | 1994-08-02 | 1997-10-21 | Sumitomo Electric Industries, Ltd. | Metallized ceramic substrate having smooth plating layer and method for producing the same |
| EP1482544A4 (en) * | 2002-03-06 | 2006-09-27 | Sumitomo Electric Industries | EMBASE AND SEMICONDUCTOR DEVICE |
| US7298049B2 (en) | 2002-03-06 | 2007-11-20 | Sumitomo Electric Industries, Ltd. | Submount for mounting semiconductor device |
| US7582125B2 (en) * | 2004-11-26 | 2009-09-01 | The Gillette Company | Method of forming a nickel layer on the cathode casing for a zinc-air cell |
| CN115410925B (en) * | 2022-09-22 | 2023-08-11 | 江苏富乐华半导体科技股份有限公司 | Method for improving heat-resistant cycle reliability of aluminum nitride coated aluminum packaging lining plate |
| WO2024060342A1 (en) * | 2022-09-22 | 2024-03-28 | 江苏富乐华半导体科技股份有限公司 | Method for improving thermal cycle reliability of aluminum nitride direct-bonded aluminum packaging substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2606716B2 (en) | 1997-05-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4987677A (en) | Bonded ceramic metal composite substrate, circuit board constructed therewith and methods for production thereof | |
| US10834823B2 (en) | Producing metal/ceramic circuit board by removing residual silver | |
| RU2196683C2 (en) | Substrate, method for its production (versions) and metallic compound of articles | |
| CN113645765B (en) | Copper-clad substrate for high-end printed circuit board and preparation method thereof | |
| US4737416A (en) | Formation of copper electrode on aluminum nitride | |
| JPH01301866A (en) | Formation of metallic layer on aluminum nitride surface | |
| JP3419620B2 (en) | Method for manufacturing ceramic circuit board having metal circuit | |
| JPH1087385A (en) | Metal-ceramic composite substrate and its production | |
| JPH11322455A (en) | Ceramic / metal joint and method of manufacturing the same | |
| JP3537320B2 (en) | Circuit board | |
| JP4049487B2 (en) | Circuit board manufacturing method | |
| JPS63119242A (en) | Circuit board | |
| JPH05160551A (en) | Method of manufacturing electronic part mounting aluminum nitride board | |
| JP2000031609A (en) | Circuit board | |
| JPS61121489A (en) | Cu wiring sheet for manufacture of substrate | |
| JP2002208760A (en) | Circuit board and method of manufacturing the same | |
| CN120164797A (en) | A method for preparing a solder-free high thermal conductivity copper-clad substrate | |
| JPH0454378B2 (en) | ||
| JP3260222B2 (en) | Circuit board manufacturing method | |
| JPH11354699A (en) | Heat sink for semiconductor and manufacturing method thereof | |
| JPH01201085A (en) | Production of copper-clad ceramic substrate for electronic part | |
| JPH02125451A (en) | Manufacture of substrate for semiconductor device | |
| JPS63210085A (en) | Surface treatment for aln sintered body | |
| JPH06350215A (en) | Aluminium nitride board having copper circuit | |
| JPH06302721A (en) | Substrate for high-power semiconductor module and manufacture thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |