JP2001203299A - Aluminium board and ceramics circuit board using the same - Google Patents
Aluminium board and ceramics circuit board using the sameInfo
- Publication number
- JP2001203299A JP2001203299A JP2000012539A JP2000012539A JP2001203299A JP 2001203299 A JP2001203299 A JP 2001203299A JP 2000012539 A JP2000012539 A JP 2000012539A JP 2000012539 A JP2000012539 A JP 2000012539A JP 2001203299 A JP2001203299 A JP 2001203299A
- Authority
- JP
- Japan
- Prior art keywords
- circuit board
- aluminum
- aluminum plate
- brazing material
- ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 53
- 229910052782 aluminium Inorganic materials 0.000 title claims description 56
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims description 55
- 239000004411 aluminium Substances 0.000 title 1
- 239000000463 material Substances 0.000 claims abstract description 37
- 238000005219 brazing Methods 0.000 claims abstract description 33
- 229910052802 copper Inorganic materials 0.000 claims abstract description 8
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 5
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 5
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 33
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000002131 composite material Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 238000005304 joining Methods 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 239000011777 magnesium Substances 0.000 description 7
- 230000037303 wrinkles Effects 0.000 description 7
- 239000011888 foil Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 230000005856 abnormality Effects 0.000 description 4
- 238000005096 rolling process Methods 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- 229910020220 Pb—Sn Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005097 cold rolling Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 238000005098 hot rolling Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910018104 Ni-P Inorganic materials 0.000 description 1
- 229910018536 Ni—P Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000013001 point bending Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000009291 secondary effect Effects 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Landscapes
- Ceramic Products (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
(57)【要約】
【課題】Ａｌ回路基板におけるＡｌ回路の皺の発生を防
止する。
【解決手段】Ａｌ板の一主面上にろう材層を設けたこと
を特徴とするセラミックス回路基板用のＡｌ板であり、
好ましくは、ろう材層がＣｕ、Ｓｉ、Ｇｅのいずれか１
種以上の元素と含有するＡｌ合金からなり、更にＭｇを
０．０５〜３質量％含有する、更に好ましくは、Ａｌ板
の厚さが２００〜１０００μｍで、ろう材層厚みが１０
〜４０μｍであるセラミックス回路基板用のＡｌ板、並
びにそれを用いてなるセラミックス回路基板。(57) Abstract: To prevent wrinkling of an Al circuit on an Al circuit board. An Al plate for a ceramic circuit board, wherein a brazing material layer is provided on one main surface of an Al plate,
Preferably, the brazing material layer is made of one of Cu, Si, and Ge.
It is made of an Al alloy containing at least one kind of element, and further contains 0.05 to 3% by mass of Mg. More preferably, the thickness of the Al plate is 200 to 1000 μm and the thickness of the brazing material layer is 10
An Al plate for a ceramic circuit board having a thickness of ４０40 μm, and a ceramic circuit board using the same.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、パワーモジュール
等に使用される高信頼性のセラミックス回路基板に関す
る。The present invention relates to a highly reliable ceramic circuit board used for a power module or the like.
【０００２】[0002]
【従来の技術】従来から、熱発生の大きい半導体等を搭
載するためのパワーモジュール等の回路基板としてアル
ミナセラミックス等の絶縁性に優れたセラミックス基板
の表面に、導電性を有する回路層を接合した回路基板が
広く普及している。2. Description of the Related Art Conventionally, as a circuit board for a power module or the like for mounting a semiconductor or the like that generates a large amount of heat, a circuit layer having conductivity is bonded to a surface of a ceramic substrate having excellent insulating properties such as alumina ceramics. Circuit boards are widely used.
【０００３】しかし、近年これら半導体素子は機器類の
小型化、高性能化に伴って熱発生量が増加する傾向にあ
り、信頼性高く安定動作を得るために半導体素子の発生
する熱を放散して、素子が破壊されない温度より十分低
くすることが一層重要な課題となってきており、前記回
路基板の特性として電気絶縁性が高いことに加え、より
高い熱伝導性が要求されてきている。However, in recent years, the amount of heat generated by these semiconductor devices has tended to increase in accordance with the miniaturization and high performance of equipment, and the heat generated by the semiconductor devices has to be dissipated in order to obtain reliable and stable operation. Therefore, it has become more important to make the temperature sufficiently lower than the temperature at which the element is not destroyed, and higher thermal conductivity is required in addition to high electrical insulation as a characteristic of the circuit board.
【０００４】上記の要求に伴って、熱伝導性の高い窒化
アルミニウム（ＡｌＮ）などのセラミックスを基板材料
として用いた、放熱性の高い銅回路基板が開発されてい
る。しかし、前記銅回路基板は機械特性が不十分であ
り、回路基板として用いる場合には、半導体素子の作動
に伴う繰り返しの熱サイクルや動作環境の温度変化等
で、セラミックス部分の銅回路層の接合部分付近にクラ
ックが発生しやすく、信頼性が低いという問題があっ
た。[0004] In accordance with the above demand, a copper circuit board having high heat dissipation using ceramics such as aluminum nitride (AlN) having high heat conductivity as a substrate material has been developed. However, the copper circuit board has insufficient mechanical properties, and when used as a circuit board, the bonding of the copper circuit layer of the ceramic portion due to repeated thermal cycles and temperature changes in the operating environment due to the operation of the semiconductor element. There has been a problem that cracks are likely to occur near the portion and reliability is low.
【０００５】この問題の解決として、例えば特開平４−
１２５５４号公報や特開平４−１８７４６号公報に回路
材料として銅よりも降伏耐力の小さいアルミニウム（Ａ
ｌ）を用いたセラミックス回路基板が開示されている。
（以下、Ａｌからなる回路を有する回路基板を単にＡｌ
回路基板という。）As a solution to this problem, for example, Japanese Unexamined Patent Publication No.
No. 12554 and Japanese Patent Application Laid-Open No. 4-18746 disclose aluminum (A) having a lower yield strength than copper as a circuit material.
A ceramic circuit board using 1) is disclosed.
(Hereinafter, a circuit board having a circuit made of Al is simply referred to as Al.
It is called a circuit board. )
【０００６】しかし、信頼性の指標となる−４０℃から
１２５℃までの繰り返し冷却、加熱する耐ヒートサイク
ル性については、前記回路基板であっても１０００回程
度でアルミニウム回路材の剥離が起こったり、セラミッ
クス基板にクラックが入る等の問題が発生し、上述のよ
うに高い信頼性の要求される用途には十分対応ができな
い。However, with respect to the heat cycle resistance of repeatedly cooling and heating from -40.degree. C. to 125.degree. C., which is an index of reliability, even if the circuit board is used, the aluminum circuit material may be peeled off after about 1,000 times. As a result, problems such as cracks in the ceramic substrate occur, and it is not possible to sufficiently cope with applications requiring high reliability as described above.
【０００７】また、特開平８−２０８３５９号公報に
は、Ａｌの溶湯を用いてＡｌを直接ＡｌＮ基板に接合し
た回路基板が開示されている。この発明によれば、Ａｌ
回路基板単体で３０００回を越える耐ヒートサイクル性
が達成されている。Japanese Patent Application Laid-Open No. 8-208359 discloses a circuit board in which Al is directly bonded to an AlN substrate using a molten metal of Al. According to the present invention, Al
The circuit board alone has achieved heat cycle resistance of more than 3000 times.
【０００８】しかし、このようにして得られたＡｌ回路
基板を実際に使用されるモジュールに組み上げた後に耐
ヒートサイクル性を調べると１０００回程度でクラック
や回路材の剥離が生じるだけでなく、Ａｌ回路表面にし
わ状の凸凹が激しくなる等の問題があり、実用上満足で
きる物ではない。特に、表面に発生する凸凹は、その程
度が激しい場合には、半導体チップ等を実装したとき
に、半田接合強度の低下やワイヤーボンドにおける密着
強度の低下をきたし、信頼性低下の原因となる。さら
に、Ａｌ溶湯を用いて直接接合しているために、Ａｌ回
路層の厚さのバラツキが大きく、安定して信頼性の高い
回路基板が得られないだけでなく、設備費や設備の維持
費がかかりコストアップになるという問題がある。However, after assembling the Al circuit board thus obtained into a module to be actually used, the heat cycle resistance is examined. There is such a problem that wrinkle-like irregularities become severe on the circuit surface, and this is not practically satisfactory. In particular, when the degree of the unevenness generated on the surface is severe, when a semiconductor chip or the like is mounted, the solder bonding strength or the bonding strength in wire bonding is reduced, which causes a reduction in reliability. Furthermore, the direct bonding using the molten aluminum causes a large variation in the thickness of the Al circuit layer, which makes it impossible to obtain a stable and highly reliable circuit board, and also costs equipment and equipment. Cost increases.
【０００９】[0009]
【発明が解決しようとする課題】本発明は、上記公知技
術の事情に鑑みてなされたものであり、例えば、電気自
動車や鉄道等の用途に適応できるパワーモジュールのよ
うな、高い信頼性が要求される用途に対応できるセラミ
ックス回路基板を提供することを目的とするものであ
る。SUMMARY OF THE INVENTION The present invention has been made in view of the circumstances of the above-mentioned known technology, and requires high reliability such as a power module applicable to an electric vehicle or a railway. It is an object of the present invention to provide a ceramic circuit board that can be used for various applications.
【００１０】[0010]
【課題を解決するための手段】本発明者は、上記目的を
達成するために鋭意検討した結果、あらかじめＡｌ板表
面にろう材層を有する複合材を用いてセラミックス基板
と接合することにより、Ａｌ回路表面に発生するしわ問
題を解決し、接合後のセラミックス回路基板のヒートサ
イクル性等の信頼性が向上できることを見出し、本発明
に至ったものである。Means for Solving the Problems As a result of intensive studies to achieve the above object, the present inventor has found that a composite material having a brazing material layer on the surface of an Al plate in advance is used to join an aluminum plate to a ceramic substrate. The present invention has been found to solve the problem of wrinkles generated on the circuit surface and to improve the reliability of the ceramic circuit board after the bonding, such as the heat cycle property.
【００１１】すなわち、本発明は、アルミニウム板の一
主面上にろう材層を設けたことを特徴とするセラミック
ス回路基板用のアルミニウム板であり、前記ろう材層が
Ｃｕ、Ｓｉ、Ｇｅのいずれか１種以上の元素とを含有す
るアルミニウム合金からなることを特徴とし、好ましく
は、更にＭｇを０．０５〜３質量％含有することを特徴
とする。That is, the present invention is an aluminum plate for a ceramic circuit board, wherein a brazing material layer is provided on one main surface of an aluminum plate, wherein the brazing material layer is made of any one of Cu, Si and Ge. It is made of an aluminum alloy containing at least one element, and preferably further contains 0.05 to 3% by mass of Mg.
【００１２】また、本発明は、前記アルミニウム板の厚
さが２００〜１０００μｍであり、ろう材層の厚みが１
０〜４０μｍであることを特徴とするセラミックス回路
基板用のアルミニウム板である。Further, according to the present invention, the thickness of the aluminum plate is 200 to 1000 μm and the thickness of the brazing material layer is 1 to 100 μm.
An aluminum plate for a ceramic circuit board, which has a thickness of 0 to 40 μm.
【００１３】また、本発明は、セラミックス基板の少な
くとも一主面上に、前記セラミックス回路基板用アルミ
ニウム板のろう材層を介して、接合して成ることを特徴
とするセラミックス回路基板であり、ことに、セラミッ
クス基板が、窒化アルミニウム又は窒化珪素のいずれか
であることを特徴とするセラミックス回路基板である。Further, the present invention is a ceramic circuit board characterized by being joined on at least one principal surface of a ceramic substrate via a brazing material layer of the aluminum plate for a ceramic circuit board. In addition, the ceramic circuit board is characterized in that the ceramic substrate is either aluminum nitride or silicon nitride.
【００１４】[0014]
【発明の実施の形態】本発明のセラミックス回路基板の
接合に用いられるろう材は、あらかじめアルミニウム板
の一主面上に設けた複合材であることを特徴とする。ろ
う材に関しては、箔を用いる方法またはペーストを用い
てスクリーン印刷する方法が知られているが、ヒートサ
イクル試験において３００回以下でＡｌ回路表面にしわ
状の凸凹を発生する。この理由については、明確ではな
いが、アルミニウムは降伏耐力が小さいために、ヒート
サイクル時に生じる熱応力によってアルミニウム結晶粒
界面ですべりを生じた結果、Ａｌ回路表面にしわ状の凸
凹を発生したと推察される。これに対して、ろう材を複
合構造にすることによりしわを抑制できる。これは、複
合材製造時の残留応力による歪みの影響によりアルミニ
ウム結晶の粒成長が抑制され、その結果、しわが抑制さ
れたと推定される。また、セラミックス回路基板作製時
における接合作業が容易となり、安定して良好な接合が
得られるという副次的効果もある。BEST MODE FOR CARRYING OUT THE INVENTION A brazing material used for bonding a ceramic circuit board according to the present invention is a composite material previously provided on one main surface of an aluminum plate. As for the brazing material, a method using a foil or a method using screen printing using a paste is known, but in a heat cycle test, wrinkle-like irregularities are generated on the surface of an Al circuit after 300 times or less. Although the reason is not clear, it is presumed that aluminum has low yield strength, and thermal stress generated during the heat cycle causes slip at the aluminum crystal grain interface, resulting in the formation of wrinkles on the Al circuit surface. Is done. On the other hand, wrinkles can be suppressed by forming the brazing material into a composite structure. This is presumed that the grain growth of the aluminum crystal was suppressed by the influence of the strain due to the residual stress during the production of the composite material, and as a result, wrinkles were suppressed. Further, there is also a secondary effect that the joining operation at the time of producing the ceramic circuit board is facilitated and stable and good joining is obtained.
【００１５】本発明に用いるろう材は、接合時の熱応力
をできるだけ低く抑えるために、より低温で接合される
ことが重要である。本発明者らが、アルミニウム板とセ
ラミックス基板との接合について、いろいろ実験的に検
討を重ねた結果、液相を生じる温度が５００℃から６３
０℃である低融点ろう材を用いて接合するときに得られ
るセラミックス回路基板、さらにそれを用いて作製した
モジュールの信頼性を高くすることができるという知見
を得て、本発明に至ったものである。It is important that the brazing material used in the present invention be joined at a lower temperature in order to keep the thermal stress during joining as low as possible. The present inventors have conducted various experimental studies on the joining of the aluminum plate and the ceramics substrate, and as a result, the temperature at which the liquid phase was generated was increased from 500 ° C. to 63 ° C.
A ceramic circuit board obtained by joining using a low melting point brazing material having a temperature of 0 ° C., and the knowledge that the reliability of a module manufactured using the same can be increased, leading to the present invention. It is.
【００１６】すなわち、本発明において、アルミニウム
材の融点以下の温度でアルミニウム板やセラミックス基
板によく濡れるように、銅（Ｃｕ）、珪素（Ｓｉ）、ゲ
ルマニウム（Ｇｅ）のいずれか１種以上の元素を含有す
るアルミニウム合金が、アルミニウム板とセラミックス
基板の接合材として、好ましく選択される。また、前記
アルミニウム合金は、５００℃から６３０℃の温度範囲
で液相を形成するものが好ましい。すなわち、５００℃
未満では接合性の面で不十分な場合があるし、６３０℃
を越える温度ではアルミニウム板やセラミックス基板に
残留する熱応力が大きくなり易いし、アルミニウム融点
に近くなるためにろう接欠陥が発生しやすくなるためで
ある。That is, in the present invention, at least one element selected from the group consisting of copper (Cu), silicon (Si), and germanium (Ge) so that the aluminum plate or the ceramic substrate is well wetted at a temperature lower than the melting point of the aluminum material. Is preferably selected as a bonding material between the aluminum plate and the ceramic substrate. Preferably, the aluminum alloy forms a liquid phase in a temperature range of 500 ° C. to 630 ° C. That is, 500 ° C
If it is lower than 630 ° C., the bonding property may be insufficient in some cases.
If the temperature exceeds the above range, the thermal stress remaining on the aluminum plate or the ceramic substrate tends to increase, and the temperature becomes close to the melting point of aluminum, so that a soldering defect easily occurs.
【００１７】また、本発明に於いては、前記アルミニウ
ム合金が更にマグネシウム（Ｍｇ）を特定量含有するこ
とが好ましい。Ｍｇの存在は、主としてセラミックス基
板表面に存在する接合を阻害する酸素成分を還元する効
果があるためと推察されている。従い、Ｍｇ量は、接合
を阻害するような酸素成分をＭｇが還元できる量にすれ
ばよいが、Ｍｇが接合温度で揮散することを考慮する
と、Ｍｇ量は少なくとも０．０５質量％程度必要であ
る。一方、３質量％以上では、接合後の密着強度が低下
することがある。In the present invention, the aluminum alloy preferably further contains a specific amount of magnesium (Mg). It is presumed that the presence of Mg is mainly due to the effect of reducing the oxygen component present on the surface of the ceramics substrate, which inhibits bonding. Accordingly, the amount of Mg may be an amount that can reduce the oxygen component that hinders the bonding, but considering that Mg is volatilized at the bonding temperature, the amount of Mg is required to be at least about 0.05% by mass. is there. On the other hand, if the content is 3% by mass or more, the adhesion strength after bonding may decrease.
【００１８】また、本発明において、アルミニウム板の
厚さが２００〜１０００μｍであり、ろう材層の厚みが
１０〜４０μｍであることが好ましい。アルミニウム板
の厚さが２００μｍ未満では、電気回路特性が不十分で
あり、回路基板としての性能が得られない。１０００μ
ｍを超えると、熱膨張差に起因する熱応力のためにセラ
ミックス基板にクラックを生じ易くなる。また、ろう材
厚みが１０μｍ未満になると十分な接合ができず回路基
板単体だけでもヒートサイクル試験において１０００回
以下でＡｌ回路剥離が発生することがある。４０μｍを
超えると接合後のろう材成分が拡散するために、Ａｌ材
の降伏耐力が大きくなり、ヒートサイクル試験において
１０００回以下で接合付近のセラミックス部分にクラッ
クが発生することがある。In the present invention, the thickness of the aluminum plate is preferably 200 to 1000 μm, and the thickness of the brazing material layer is preferably 10 to 40 μm. When the thickness of the aluminum plate is less than 200 μm, electric circuit characteristics are insufficient, and performance as a circuit board cannot be obtained. 1000μ
If it exceeds m, cracks are likely to occur in the ceramic substrate due to thermal stress caused by a difference in thermal expansion. If the thickness of the brazing material is less than 10 μm, sufficient bonding cannot be achieved, and even if the circuit board alone is used, the Al circuit peeling may occur after 1,000 times or less in the heat cycle test. If the thickness exceeds 40 μm, the brazing filler metal component after bonding is diffused, so that the yield strength of the Al material increases, and cracks may occur in the ceramic portion near the bonding after 1000 times or less in the heat cycle test.
【００１９】また、本発明において、回路に用いるアル
ミニウム板は、９５質量％以上のアルミニウム含有率で
あることが好ましい。９５質量％未満のアルミニウム含
有率のものは、降伏耐力が高くなり、アルミニムウム回
路のセラミック基板からの剥離が生じ易くなるためであ
る。In the present invention, the aluminum plate used in the circuit preferably has an aluminum content of 95% by mass or more. When the aluminum content is less than 95% by mass, the yield strength is high, and the aluminum circuit is easily peeled from the ceramic substrate.
【００２０】本発明に用いるアルミニウム複合材は、従
来公知の方法で得ることができる。例えば、箔化したろ
う材とＡｌ板を重ねあわせ、加熱圧着または熱間圧延に
よって貼り合わせ、圧延された後に、さらに冷間圧延に
より所定の厚みまで箔化されることによって得る方法が
一般的に採用されるが、前記方法以外にメッキ法或いは
メッキ法と前記の圧延による方法とを組み合わせること
によっても本発明のアルミニウム板を得ることができ
る。The aluminum composite used in the present invention can be obtained by a conventionally known method. For example, a method is generally obtained by laminating a foiled brazing material and an Al plate, bonding by hot pressing or hot rolling, rolling, and then further rolling by cold rolling to a predetermined thickness. The aluminum plate of the present invention can be obtained by employing a plating method or a combination of the plating method and the above-mentioned rolling method in addition to the above method.
【００２１】また、セラミックス基板としては、電気絶
縁性で熱伝導性に富むものならばどの様なものでも構わ
ず、例えば、アルミナやベリリアを添加した炭化珪素、
窒化珪素、窒化アルミニウム等を挙げることができる
が、これらの内では、電力が大きなパワーデバイスで熱
の発生が大きいことを考慮すると絶縁耐圧が高く、熱伝
導性の高いことから窒化アルミニウム基板、窒化珪素
（Ｓｉ3Ｎ4）基板が適している。As the ceramic substrate, any substrate may be used as long as it is electrically insulating and has high thermal conductivity. For example, silicon carbide to which alumina or beryllia is added,
Silicon nitride, aluminum nitride, and the like can be given. Of these, considering that a large power device generates a large amount of heat, it has a high withstand voltage and a high thermal conductivity. A silicon (Si 3 N 4 ) substrate is suitable.
【００２２】本発明の回路基板は、ろう材層を有するア
ルミニウム複合材を用いてセラミックス基板とを加熱接
合した後、エッチングする方法、或るいは、アルミニウ
ム複合材から打ち抜き等により予め回路パターンを形成
し、これをセラミックス基板とを加熱接合する方法等に
よって製造することができる。尚、接合する際に、接合
する面に０．１〜５ＭＰａの垂直力を付加することが望
ましい。The circuit board of the present invention is formed by heating and bonding a ceramic substrate using an aluminum composite material having a brazing material layer, and then forming a circuit pattern in advance by punching or the like from the aluminum composite material. Then, it can be manufactured by a method of heating and joining the ceramic substrate and the like. At the time of joining, it is desirable to apply a normal force of 0.1 to 5 MPa to the joining surfaces.
【００２３】[0023]
【実施例】〔実施例１〜７〕ろう材については、黒鉛−
炭化珪素複合材のルツボにアルミニウムを溶融させ、そ
こに所望組成となるように添加金属を加え、充分撹拌溶
解し、必要に応じフラックスを添加し、鉱滓等を除去
後、型に流し込み冷却固化させてろう材用の合金を得
た。[Examples] [Examples 1 to 7] For the brazing material, graphite-
Aluminum is melted in a crucible of a silicon carbide composite material, an additional metal is added thereto so as to have a desired composition, sufficiently stirred and dissolved, a flux is added as necessary, and slag and the like are removed, and then poured into a mold and cooled and solidified. An alloy for brazing material was obtained.
【００２４】次に、前記合金を、圧延とアニールとを繰
り返して、徐々に所望の厚さの合金箔とした。前記合金
箔ろう材について、その組成を蛍光Ｘ線法にて定量評価
した。Next, rolling and annealing of the alloy were repeated to gradually form an alloy foil having a desired thickness. The composition of the brazing alloy foil was quantitatively evaluated by a fluorescent X-ray method.
【００２５】前記合金箔を所定厚さのアルミニウム板に
重ね、加熱圧着並びに熱間圧延によって貼り合わせ、圧
延した。さらにアニール、冷間圧延を施して、所定厚み
まで薄肉化して、表１に示す通りに、いろいろなろう材
を有するアルミニウム板を作製した。The above-mentioned alloy foil was overlaid on an aluminum plate having a predetermined thickness, and bonded and rolled by thermocompression bonding and hot rolling. Further, annealing and cold rolling were performed to reduce the thickness to a predetermined thickness. As shown in Table 1, aluminum plates having various brazing materials were produced.
【００２６】セラミックス基板としては、大きさ５０×
５０×０．６３５ｍｍ、熱伝導率１７５Ｗ／ｍＫ、３点
曲げ強度の平均値が４２０ＭＰａである窒化アルミニウ
ム基板を用意した。The ceramic substrate has a size of 50 ×
An aluminum nitride substrate having a size of 50 × 0.635 mm, a thermal conductivity of 175 W / mK, and an average value of three-point bending strength of 420 MPa was prepared.
【００２７】前記窒化アルミニウム基板を用い、その表
裏両面に、前記のろう材を有したアルミニウム板をろう
材合金箔を介して積層し、接合面に対して垂直方向に３
ＭＰａの荷重を負荷した。そして、１０ー2Ｐａの真空中
で、５００℃から６３０℃の温度範囲中の所望の温度に
て、加圧しながら、アルミニウム板と窒化アルミニウム
基板とを接合した。これらの条件を表１に示す。Using the aluminum nitride substrate, an aluminum plate having the above brazing material is laminated on both front and back surfaces of the aluminum nitride substrate via a brazing alloy alloy foil.
A load of MPa was applied. Then, in a vacuum of 10-2 2 Pa, at a desired temperature in a temperature range of 630 ° C. from 500 ° C., under pressure, to bond the aluminum plate and the aluminum nitride substrate. Table 1 shows these conditions.
【００２８】[0028]
【表１】 [Table 1]
【００２９】その後、アルミニウム板表面の所望部分に
エッチングレジストをスクリーン印刷して、塩化第二鉄
溶液を用いてエッチング処理し、回路パターンを形成し
た。次いで、レジストを剥離した後に、アルミニウム回
路の所望部分と前記アルミニウム回路と反対側のアルミ
ニウム板（放熱板）の全面に３μｍ厚さに無電解Ｎｉ−
Ｐメッキを行いセラミックス回路基板とし、以下に示
す、信頼性の評価を行った。この結果、外観検査で、基
板のクラック発生、回路部の基板からの剥離、或いは回
路部の皺の発生等の異常は認められなかった。この結果
を表２に示す。Thereafter, an etching resist was screen-printed on a desired portion of the surface of the aluminum plate, and an etching treatment was performed using a ferric chloride solution to form a circuit pattern. Then, after removing the resist, the desired portion of the aluminum circuit and the entire surface of the aluminum plate (heat radiating plate) on the side opposite to the aluminum circuit are electrolessly plated to a thickness of 3 μm.
P plating was performed to obtain a ceramic circuit board, and the following reliability evaluation was performed. As a result, no abnormality such as cracking of the substrate, peeling of the circuit portion from the substrate, or generation of wrinkles in the circuit portion was observed in the appearance inspection. Table 2 shows the results.
【００３０】更に、前記セラミックス回路基板のアルミ
ニウム回路上のＮｉ−Ｐメッキを施した部分に、０．４
ｍｍ厚さ×１５ｍｍ角のＳｉチップ２枚をＰｂ−Ｓｎ共
晶半田で半田付けし、又、直径０．５ｍｍのアルミニウ
ムワイヤーを超音波にてボンディングし、前記Ｓｉチッ
プとアルミニウム回路とを結線した。更に、放熱板側に
７０×１００×３ｍｍのＡｌ／ＳｉＣ複合材からなるヒ
ートシンク（熱膨張率７．５ｐｐｍ／Ｋ、熱伝導率２０
０Ｗ／ｍＫ）をＰｂ−Ｓｎ共晶半田で半田付けしてモジ
ュールを作製した。得られたモジュールについて、以下
に示す信頼性の評価を行った。その結果を表２に示す。Further, the Ni-P plated portion on the aluminum circuit of the ceramic circuit board is placed on the aluminum circuit.
Two Si chips each having a thickness of 15 mm × 15 mm square were soldered with Pb-Sn eutectic solder, and an aluminum wire having a diameter of 0.5 mm was ultrasonically bonded to connect the Si chip and an aluminum circuit. . Further, a heat sink (thermal expansion coefficient: 7.5 ppm / K, thermal conductivity: 20 × 100 × 3 mm) made of Al / SiC composite material
0W / mK) with Pb-Sn eutectic solder to produce a module. The obtained modules were evaluated for reliability as described below. Table 2 shows the results.
【００３１】[0031]
【表２】 [Table 2]
【００３２】〔比較例１、２〕比較の例として、予めろ
う材をアルミニウム板に複合化したものをセラミックス
基板に接合することに代えて、アルミニウム板をろう材
の箔を介してセラミックス基板に積層し、接合したこと
以外は実施例１、実施例６と同じ操作を行ってセラミッ
クス回路基板を得た（それぞれ比較例１、比較例２）。
前記セラミックス回路基板について、実施例１〜７と同
じ信頼性の評価を行ったところ、いずれも回路部分に皺
の発生が認められ、不良であった。この結果を表２に示
す。[Comparative Examples 1 and 2] As a comparative example, an aluminum plate was bonded to a ceramics substrate via a brazing material foil instead of bonding a composite of a brazing material to an aluminum plate in advance to a ceramics substrate. A ceramic circuit board was obtained by performing the same operations as in Examples 1 and 6 except that they were laminated and joined (Comparative Examples 1 and 2 respectively).
When the same reliability evaluation as in Examples 1 to 7 was performed on the ceramic circuit board, wrinkling was observed in the circuit portion, and the circuit was defective. Table 2 shows the results.
【００３３】〔信頼性の評価方法〕回路基板並びにモジ
ュールについて、−４０℃×３０分→室温×１０分→１
２５℃×３０分→室温×１０分を１サイクルとするヒー
トサイクルを３０００回実施した。その後、目視及び超
音波探傷により、ボンディングワイヤーの脱離やアルミ
ニウム回路板の剥離、窒化アルミニウム基板におけるク
ラック発生の状況等の異常の有無を観察した。[Evaluation Method of Reliability] For the circuit board and the module, -40 ° C. × 30 minutes → room temperature × 10 minutes → 1
A heat cycle was performed 3000 times with one cycle of 25 ° C. × 30 minutes → room temperature × 10 minutes. Thereafter, the presence or absence of abnormalities such as detachment of the bonding wire, peeling of the aluminum circuit board, and the occurrence of cracks in the aluminum nitride substrate was observed by visual inspection and ultrasonic flaw detection.
【００３４】表２から明らかなように本発明のろう材層
を設けたアルミニウム板を用いたセラミックス回路基板
並びにモジュールは、ヒートサイクル３０００回後で
も、回路材の剥離や皺、また窒化アルミニウム基板およ
び半田部のクラックの発生等の異常は認められず、極め
て高い信頼性を有している。As is clear from Table 2, the ceramic circuit board and the module using the aluminum plate provided with the brazing material layer according to the present invention can be used for peeling and wrinkling of the circuit material, the aluminum nitride substrate and the aluminum nitride board even after 3000 heat cycles. No abnormalities such as cracks in the solder portion are observed, and the reliability is extremely high.
【００３５】[0035]
【発明の効果】本発明のアルミニウム板は、その一主面
上にろう材層を設けた構造を有し、これを用いてなるア
ルミニウム回路基板は、繰り返しの加熱冷却を受けて
も、回路剥離や皺の発生、また基板や半田部分でのクラ
ックの発生といった異常のない、高信頼性の回路基板で
あり、しかも前記構造に由来して低コストで前記回路基
板を得ることができるという特徴を有しているので、産
業上非常に有用である。The aluminum plate of the present invention has a structure in which a brazing material layer is provided on one main surface thereof. It is a highly reliable circuit board free of abnormalities such as generation of wrinkles and wrinkles, and cracks in the board and the solder portion, and has a feature that the circuit board can be obtained at low cost due to the structure. Because it has, it is very useful industrially.
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 4G026 BA16 BA17 BB27 BF20 BG02 BH07 5E343 AA02 AA24 BB28 BB54 BB55 CC01 DD33 DD76 ER13 GG16 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4G026 BA16 BA17 BB27 BF20 BG02 BH07 5E343 AA02 AA24 BB28 BB54 BB55 CC01 DD33 DD76 ER13 GG16
Claims (6)
けたことを特徴とするセラミックス回路基板用アルミニ
ウム板。1. An aluminum plate for a ceramic circuit board, wherein a brazing material layer is provided on one main surface of the aluminum plate.
１種以上の元素を含有するアルミニウム合金からなるこ
とを特徴とする請求項１記載のセラミックス回路基板用
アルミニウム板。2. The aluminum plate for a ceramic circuit board according to claim 1, wherein the brazing material layer is made of an aluminum alloy containing at least one element of Cu, Si and Ge.
％含有することを特徴とする請求項２記載のセラミック
ス回路基板用アルミニウム板。3. The aluminum plate for a ceramic circuit board according to claim 2, wherein the brazing material layer further contains 0.05 to 3% by mass of Mg.
μｍであり、ろう材層の厚みが１０〜４０μｍであるこ
とを特徴とする請求項１、請求項２又は請求項３記載の
セラミックス回路基板用アルミニウム板。4. The thickness of the aluminum plate is 200-1000.
4. The aluminum plate for a ceramic circuit board according to claim 1, wherein the thickness of the brazing material layer is 10 to 40 μm. 5.
に、請求項１、請求項２、請求項３又は請求項４記載の
セラミックス回路基板用アルミニウム板を、前記アルミ
ニウム板のろう材層を介して、接合して成ることを特徴
とするセラミックス回路基板。5. An aluminum plate for a ceramic circuit board according to claim 1, 2, 3 or 4 on at least one principal surface of the ceramic substrate via a brazing material layer of the aluminum plate. And a ceramic circuit board characterized by being joined.
は窒化珪素のいずれかであることを特徴とする請求項５
記載のセラミックス回路基板。6. The ceramic substrate according to claim 5, wherein said ceramic substrate is one of aluminum nitride and silicon nitride.
The ceramic circuit board as described.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000012539A JP2001203299A (en) | 2000-01-21 | 2000-01-21 | Aluminium board and ceramics circuit board using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000012539A JP2001203299A (en) | 2000-01-21 | 2000-01-21 | Aluminium board and ceramics circuit board using the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001203299A true JP2001203299A (en) | 2001-07-27 |
Family
ID=18540244
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000012539A Pending JP2001203299A (en) | 2000-01-21 | 2000-01-21 | Aluminium board and ceramics circuit board using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001203299A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003048787A (en) * | 2001-08-06 | 2003-02-21 | Nhk Spring Co Ltd | Composite material with Al-based ceramics and method of manufacturing the same |
| JP2003060129A (en) * | 2001-08-09 | 2003-02-28 | Denki Kagaku Kogyo Kk | Circuit board and partial plating method for circuit board |
| JP2003112980A (en) * | 2001-09-28 | 2003-04-18 | Dowa Mining Co Ltd | Metal-ceramic joint |
| JP2008306106A (en) * | 2007-06-11 | 2008-12-18 | Mitsubishi Materials Corp | Power module substrate, manufacturing method thereof, and power module |
| JP2012116683A (en) * | 2010-11-30 | 2012-06-21 | Showa Denko Kk | Method for manufacturing aluminum brazed product |
| WO2016192965A1 (en) * | 2015-06-02 | 2016-12-08 | Rogers Germany Gmbh | Method for producing a composite material |
| WO2017077761A1 (en) * | 2015-11-06 | 2017-05-11 | 三菱マテリアル株式会社 | Ceramic-aluminum conjugate, power module substrate, and power module |
-
2000
- 2000-01-21 JP JP2000012539A patent/JP2001203299A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003048787A (en) * | 2001-08-06 | 2003-02-21 | Nhk Spring Co Ltd | Composite material with Al-based ceramics and method of manufacturing the same |
| JP2003060129A (en) * | 2001-08-09 | 2003-02-28 | Denki Kagaku Kogyo Kk | Circuit board and partial plating method for circuit board |
| JP2003112980A (en) * | 2001-09-28 | 2003-04-18 | Dowa Mining Co Ltd | Metal-ceramic joint |
| JP2008306106A (en) * | 2007-06-11 | 2008-12-18 | Mitsubishi Materials Corp | Power module substrate, manufacturing method thereof, and power module |
| JP2012116683A (en) * | 2010-11-30 | 2012-06-21 | Showa Denko Kk | Method for manufacturing aluminum brazed product |
| WO2016192965A1 (en) * | 2015-06-02 | 2016-12-08 | Rogers Germany Gmbh | Method for producing a composite material |
| CN107787259A (en) * | 2015-06-02 | 2018-03-09 | 罗杰斯德国有限公司 | Method for manufacturing composite |
| US10448504B2 (en) | 2015-06-02 | 2019-10-15 | Rogers Germany Gmbh | Method for producing a composite material |
| WO2017077761A1 (en) * | 2015-11-06 | 2017-05-11 | 三菱マテリアル株式会社 | Ceramic-aluminum conjugate, power module substrate, and power module |
| KR20180077170A (en) * | 2015-11-06 | 2018-07-06 | 미쓰비시 마테리알 가부시키가이샤 | Ceramics / aluminum junction body, substrate for power module, and power module |
| US10607907B2 (en) | 2015-11-06 | 2020-03-31 | Mitsubishi Materials Corporation | Ceramic-aluminum conjugate, power module substrate, and power module |
| KR102462273B1 (en) | 2015-11-06 | 2022-11-01 | 미쓰비시 마테리알 가부시키가이샤 | Ceramics/aluminum assembly, substrate for power module, and power module |
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