JP2000228159A - Conductive antireflection film - Google Patents
Conductive antireflection filmInfo
- Publication number
- JP2000228159A JP2000228159A JP11027526A JP2752699A JP2000228159A JP 2000228159 A JP2000228159 A JP 2000228159A JP 11027526 A JP11027526 A JP 11027526A JP 2752699 A JP2752699 A JP 2752699A JP 2000228159 A JP2000228159 A JP 2000228159A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- reflection
- oxide
- geometric thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910003437 indium oxide Inorganic materials 0.000 claims abstract description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910001887 tin oxide Inorganic materials 0.000 claims abstract description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 239000010408 film Substances 0.000 description 51
- 238000010438 heat treatment Methods 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 4
- 239000006117 anti-reflective coating Substances 0.000 description 3
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Surface Treatment Of Optical Elements (AREA)
- Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、導電性反射防止膜に関
し、特に成膜後に４００℃以上の熱処理が施される陰極
線管パネルの前面に形成するのに適した導電性反射防止
膜に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a conductive anti-reflection film, and more particularly to a conductive anti-reflection film suitable for forming on the front surface of a cathode ray tube panel which is subjected to a heat treatment at 400 DEG C. or more after film formation. It is.
【０００２】[0002]
【従来の技術】従来より、陰極線管の表示面であるパネ
ル前面には、反射低減や帯電防止が要求されており、最
近では、人体に悪影響を及ぼす極低周波の電磁波を遮断
することも求められるようになってきている。2. Description of the Related Art Heretofore, there has been a demand for reducing reflection and preventing static electricity on the front surface of a panel, which is a display surface of a cathode ray tube. Recently, it has also been required to block an extremely low frequency electromagnetic wave which adversely affects the human body. It is becoming possible.
【０００３】そのため陰極線管のパネル前面に各種の多
層膜を形成することによって、陰極線管に、反射低減、
帯電防止及び電磁波遮蔽の機能を付与することが試みら
れており、これらの特性を満足させる導電性反射防止膜
として、酸化物や窒化物を用いた多層膜が提案されてい
る。[0003] Therefore, by forming various multilayer films on the front surface of the panel of the cathode ray tube, it is possible to reduce the reflection,
Attempts have been made to provide antistatic and electromagnetic wave shielding functions, and multilayer films using oxides and nitrides have been proposed as conductive antireflection films that satisfy these characteristics.
【０００４】従来から提案されている導電性反射防止膜
で、優れた反射低減能力、具体的には０．５％以下の視
感反射率を有するものとしては、ＳｉＯ2、ＴｉＯ2、Ｓ
ｎＯ 2等の層からなる多層膜があるが、このような多層
膜は、膜総数が４〜７層と多いため、生産コストが高く
なるという問題がある。また成膜後に熱処理を受ける
と、光学特性や物理特性が複雑に変化するという欠点も
ある。Conventionally proposed conductive anti-reflection coating
And excellent reflection reduction ability, specifically, 0.5% or less
As a material having a sensitive reflectance, SiO 2Two, TiOTwo, S
nO TwoThere is a multilayer film consisting of layers such as
Since the total number of films is as large as 4 to 7 layers, the production cost is high.
Problem. Also undergoes heat treatment after film formation
The disadvantage that optical and physical properties change in a complicated way
is there.
【０００５】また近年では、窒化物からなる吸収膜を含
み、膜総数を少なくした多層膜も提案されており、例え
ば特表平６−５１０３８２号公報には、基体側から順
に、窒化ニオブを含む層と、二酸化チタンを含む層と、
二酸化ケイ素を含む層からなる導電性反射防止膜が提案
されている。In recent years, a multilayer film including an absorption film made of nitride and having a reduced total number of films has been proposed. For example, Japanese Patent Application Laid-Open No. 6-510382 discloses that a multilayer film contains niobium nitride in order from the substrate side. A layer, a layer comprising titanium dioxide,
A conductive anti-reflective coating comprising a layer containing silicon dioxide has been proposed.
【０００６】また特開平９−１５６９６４号公報には、
基体側から順に、チタン、ジルコニアおよびハフニウム
から選択された金属の窒化物を主成分とする層と、シリ
カ層からなる導電性反射防止膜が提案されている。Japanese Patent Application Laid-Open No. 9-156964 discloses that
In order from the substrate side, there has been proposed a conductive anti-reflection film comprising a layer mainly composed of a nitride of a metal selected from titanium, zirconia and hafnium, and a silica layer.
【０００７】[0007]
【発明が解決しようとする課題】ところで陰極線管の場
合、基体となるパネル上に成膜した後に、ファンネルと
のフリットシール工程や排気工程が存在し、これらの工
程で４００℃以上の熱処理が施される。By the way, in the case of a cathode ray tube, after a film is formed on a panel serving as a base, a frit sealing step with a funnel and an exhausting step are present, and a heat treatment at 400 ° C. or more is performed in these steps. Is done.
【０００８】しかしながら特表平６−５１０３８２号公
報や特開平９−１５６９６４号公報に開示された導電性
反射防止膜は、耐熱性が十分でないため、成膜後に４０
０℃以上の高温で加熱されると、膜の反射特性や抵抗値
が大きく変化しやすいという欠点を有している。またこ
のような多層膜は、着色膜であるため、これを陰極線管
パネル上に形成すると、陰極線管の輝度が低下し、さら
に窒化ニオブや窒化チタン等の吸収膜の裏面反射率が高
いため、陰極線管パネルに映し出された画像が二重に見
えやすいという欠点もある。However, the conductive anti-reflection film disclosed in Japanese Patent Application Laid-Open No. 6-510382 and Japanese Patent Application Laid-Open No. 9-156964 has insufficient heat resistance.
When heated at a high temperature of 0 ° C. or higher, there is a disadvantage that the reflection characteristics and the resistance value of the film are liable to change greatly. In addition, since such a multilayer film is a colored film, if it is formed on a cathode ray tube panel, the brightness of the cathode ray tube is reduced, and the reflectance of the back surface of the absorbing film such as niobium nitride or titanium nitride is high. There is also a drawback that the image projected on the cathode ray tube panel is easily seen as a double image.
【０００９】本発明の目的は、膜総数が３層であって
も、反射低減、帯電防止、電磁波遮蔽について優れた能
力を有し、しかも耐熱性に優れ、陰極線管の輝度が低下
したり、画像が二重に見えることもない導電性反射防止
膜を提供することである。It is an object of the present invention to provide a cathode ray tube having excellent ability to reduce reflection, prevent electrostatic charge, and shield electromagnetic waves even when the total number of films is three, and to reduce the brightness of a cathode ray tube. An object of the present invention is to provide a conductive anti-reflection film in which an image does not look double.
【００１０】[0010]
【課題を解決するための手段】本発明の導電性反射防止
膜は、基体上に形成される３つの層を含み、基体側から
順に第１、第２、第３の層と呼ぶ時、第１の層は、シリ
コンの酸窒化物からなり、屈折率が１．５５〜１．９５
で、３０〜１５０ｎｍの幾何学的厚みを有し、第２の層
は、酸化スズ、酸化チタン、インジウム酸化物の少なく
とも一種からなり、屈折率が１．９５〜２．４５で、３
０〜１５００ｎｍの幾何学的厚みを有し、第３の層は、
シリコンの酸化物の層からなり、７０〜１２０ｎｍの幾
何学的厚みを有することを特徴とする。The conductive anti-reflection film of the present invention includes three layers formed on a substrate, and when referred to as a first, second, and third layers in order from the substrate side, a first The first layer is made of silicon oxynitride and has a refractive index of 1.55 to 1.95.
The second layer is made of at least one of tin oxide, titanium oxide, and indium oxide, has a refractive index of 1.95 to 2.45, and has a geometrical thickness of 30 to 150 nm.
The third layer has a geometric thickness of 0-1500 nm,
It comprises a layer of silicon oxide and has a geometric thickness of 70 to 120 nm.
【００１１】[0011]
【作用】本発明において、最も基体側に形成される第１
の層であるシリコンの酸窒化物からなる層は、膜と基体
との密着強度を向上させると共に膜の耐熱性を向上させ
る作用を有している。また第２、第３の層との干渉効果
により低反射を付与する作用も有している。According to the present invention, the first substrate formed closest to the substrate is used.
The layer made of silicon oxynitride, which is the layer of (1), has an effect of improving the adhesive strength between the film and the base and improving the heat resistance of the film. It also has an effect of giving low reflection by an interference effect with the second and third layers.
【００１２】また第２の層である酸化スズ、酸化チタ
ン、インジウム酸化物の少なくとも一種からなる層は、
低反射と導電性を付与する作用を有している。The second layer, which is a layer made of at least one of tin oxide, titanium oxide and indium oxide,
It has the function of providing low reflection and conductivity.
【００１３】さらに第３の層であるシリコンの酸化物か
らなる層は、低反射を付与する作用を有している。The third layer, which is a layer made of silicon oxide, has a function of giving low reflection.
【００１４】このような第１〜第３の膜層からなる本発
明の導電性反射防止膜は、透明膜であり、また窒化ニオ
ブや窒化チタンの膜を使用しないため、陰極線管パネル
上に形成しても、輝度が低下したり、画像が二重に見え
ることがない。The conductive anti-reflection film of the present invention comprising such first to third film layers is a transparent film and does not use a film of niobium nitride or titanium nitride, so that it is formed on a cathode ray tube panel. However, the brightness does not decrease and the image does not look double.
【００１５】尚、各膜層の屈折率や膜厚は、反射低減、
帯電防止、電磁波遮蔽の各特性を考慮して限定したもの
であり、屈折率や膜厚が上記の範囲外になると、これら
の特性が不十分となりやすいため、好ましくない。The refractive index and film thickness of each film layer are set to reduce reflection,
The characteristics are limited in consideration of the characteristics of antistatic and electromagnetic wave shielding. If the refractive index and the film thickness are out of the above-mentioned ranges, these characteristics tend to be insufficient, which is not preferable.
【００１６】本発明においては、上記したような第１〜
第３の膜層以外にも、必要に応じて膜の密着性を向上さ
せたり、色調を調整する目的で、付加的な薄膜層を適宜
設けることも可能である。[0016] In the present invention, the first to the first as described above.
In addition to the third film layer, if necessary, an additional thin film layer can be appropriately provided for the purpose of improving the adhesion of the film or adjusting the color tone.
【００１７】本発明の導電性反射防止膜の成膜方法とし
ては、一般的な薄膜形成手段が使用できる。例えばスパ
ッタリング法、真空蒸着法、ＣＶＤ法、スピンコート
法、ゾルゲル法等が適用可能であるが、大面積化が容易
であることや膜厚を制御しやすいこと等を考慮すると、
スパッタリング法が最も好ましい。As a method for forming the conductive anti-reflection film of the present invention, general thin film forming means can be used. For example, a sputtering method, a vacuum evaporation method, a CVD method, a spin coating method, a sol-gel method, and the like can be applied.However, considering that the area can be easily increased and the film thickness can be easily controlled,
Sputtering is most preferred.
【００１８】[0018]
【実施例】以下、本発明の導電性反射防止膜を実施例に
基づいて詳細に説明する。EXAMPLES Hereinafter, the conductive antireflection film of the present invention will be described in detail with reference to examples.
【００１９】表１は、実施例の導電性反射防止膜（試料
Ｎｏ．１、２）を示し、表２は、比較例の導電性反射防
止膜（試料Ｎｏ．３）を示すものである。Table 1 shows the conductive anti-reflective coatings of the examples (Sample Nos. 1 and 2), and Table 2 shows the conductive anti-reflective coatings of Comparative Example (Sample No. 3).
【００２０】[0020]
【表１】 [Table 1]
【００２１】[0021]
【表２】 [Table 2]
【００２２】表中の導電性反射防止膜は、次のようにし
て作製した。The conductive antireflection films in the table were prepared as follows.
【００２３】まず１７インチサイズの陰極線管パネルガ
ラスを準備し、その前面にマグネトロンスパッタコート
装置を用いて、表に示すような３層構造の導電性反射防
止膜を形成した。表中の膜構成の欄には、各膜層の材
料、幾何学的厚み及び屈折率を示した。First, a cathode ray tube panel glass having a size of 17 inches was prepared, and a conductive antireflection film having a three-layer structure as shown in the table was formed on the front surface thereof by using a magnetron sputter coater. In the column of the film configuration in the table, the material, geometric thickness and refractive index of each film layer are shown.
【００２４】こうして得られた各試料を箱型電気炉に入
れ、４５０℃、６０分間の熱処理を行い、熱処理前後の
波長４５０ｎｍ、波長５５０ｎｍ、波長６２０ｎｍにお
ける反射率、抵抗値、膜透過率及び膜裏面反射率を測定
した。Each of the thus obtained samples was placed in a box-type electric furnace and heat-treated at 450 ° C. for 60 minutes. The reflectance, the resistance, the film transmittance and the film transmittance at 450 nm, 550 nm and 620 nm before and after the heat treatment were measured. The back surface reflectance was measured.
【００２５】その結果、実施例であるＮｏ．１、２の各
試料は、比較例であるＮｏ．３の試料に比べて、熱処理
前と熱処理後の反射率の変動が小さく、抵抗値の変動も
小さかった。また実施例の各試料は、膜透過率が高いた
め、高い輝度の陰極線管が得られ、さらに膜裏面反射率
が低いため、画像が二重に見えることがないと推測され
る。As a result, in Example No. Each sample of Nos. 1 and 2 is No. 1 as a comparative example. As compared with the sample No. 3, the change in the reflectance before and after the heat treatment was small and the change in the resistance value was also small. In addition, since the samples of the examples have high film transmittance, a cathode ray tube with high luminance can be obtained, and further, since the film back surface reflectance is low, it is presumed that an image does not appear double.
【００２６】尚、表中の反射率は、瞬間マルチ反射率測
定器を用いて、１５°正反射を測定したものである。The reflectivity in the table is obtained by measuring 15 ° regular reflection using an instantaneous multi-reflectance measuring device.
【００２７】また抵抗値は、パネル短辺側の中央部に超
音波ハンダで電極を取り付け、電極間の抵抗をテスター
で測定したものである。The resistance value is obtained by attaching an electrode to the center of the panel on the short side by ultrasonic soldering and measuring the resistance between the electrodes with a tester.
【００２８】さらに膜透過率は、自記分光光度計によっ
て測定し、膜裏面反射率は、瞬間マルチ反射率測定器に
よって測定した。Further, the film transmittance was measured by a self-recording spectrophotometer, and the film back surface reflectance was measured by an instantaneous multi-reflectometer.
【００２９】[0029]
【発明の効果】以上のように本発明の導電性反射防止膜
は、膜総数が３層であっても、反射低減、帯電防止、電
磁波遮蔽について優れた能力を有し、しかも耐熱性に優
れ、さらに陰極線管パネル上に形成しても、輝度が低下
したり、画像が二重に見えることがないため、陰極線管
パネル上に成膜される導電性反射防止膜として好適であ
る。またこれ以外にも、成膜後に高温の熱処理が施され
る液晶ディスプレイ基板やプラズマディスプレイ基板等
の各種ディスプレイにも適用可能である。As described above, the conductive anti-reflection film of the present invention has excellent ability to reduce reflection, prevent electrification, shield electromagnetic waves, and has excellent heat resistance even if the total number of films is three. Further, even if it is formed on a cathode ray tube panel, since the brightness is not reduced and the image is not seen double, it is suitable as a conductive antireflection film formed on the cathode ray tube panel. In addition, the present invention can be applied to various displays such as a liquid crystal display substrate and a plasma display substrate which are subjected to a high-temperature heat treatment after film formation.
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 2K009 AA06 BB02 CC02 CC03 DD04 EE03 5C032 AA02 DD02 DE01 DE03 DG01 DG02 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2K009 AA06 BB02 CC02 CC03 DD04 EE03 5C032 AA02 DD02 DE01 DE03 DG01 DG02
Claims (1)
体側から順に第１、第２、第３の層と呼ぶ時、第１の層
は、シリコンの酸窒化物からなり、屈折率が１．５５〜
１．９５で、３０〜１５０ｎｍの幾何学的厚みを有し、
第２の層は、酸化スズ、酸化チタン、インジウム酸化物
の少なくとも一種を含からなり、屈折率が１．９５〜
２．４５で、３０〜１５００ｎｍの幾何学的厚みを有
し、第３の層は、シリコンの酸化物の層からなり、７０
〜１２０ｎｍの幾何学的厚みを有することを特徴とする
導電性反射防止膜。1. A semiconductor device comprising three layers formed on a substrate, which are referred to as first, second and third layers in order from the substrate side, wherein the first layer is made of silicon oxynitride, The rate is 1.55-
1.95, having a geometric thickness of 30-150 nm,
The second layer includes at least one of tin oxide, titanium oxide, and indium oxide, and has a refractive index of 1.95 to
2.45, having a geometric thickness of 30-1500 nm, the third layer comprising a layer of oxide of silicon;
A conductive anti-reflection film having a geometric thickness of 120 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11027526A JP2000228159A (en) | 1999-02-04 | 1999-02-04 | Conductive antireflection film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11027526A JP2000228159A (en) | 1999-02-04 | 1999-02-04 | Conductive antireflection film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000228159A true JP2000228159A (en) | 2000-08-15 |
Family
ID=12223576
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11027526A Pending JP2000228159A (en) | 1999-02-04 | 1999-02-04 | Conductive antireflection film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000228159A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7597938B2 (en) * | 2004-11-29 | 2009-10-06 | Guardian Industries Corp. | Method of making coated article with color suppression coating including flame pyrolysis deposited layer(s) |
-
1999
- 1999-02-04 JP JP11027526A patent/JP2000228159A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7597938B2 (en) * | 2004-11-29 | 2009-10-06 | Guardian Industries Corp. | Method of making coated article with color suppression coating including flame pyrolysis deposited layer(s) |
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