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JP2000292601A - Conducting reflection preventive film - Google Patents

Conducting reflection preventive film

Info

Publication number
JP2000292601A
JP2000292601A JP11102120A JP10212099A JP2000292601A JP 2000292601 A JP2000292601 A JP 2000292601A JP 11102120 A JP11102120 A JP 11102120A JP 10212099 A JP10212099 A JP 10212099A JP 2000292601 A JP2000292601 A JP 2000292601A
Authority
JP
Japan
Prior art keywords
layer
refractive index
transparent
conductive
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11102120A
Other languages
Japanese (ja)
Inventor
Yoshiharu Miwa
義治 三和
Toshimasa Kanai
敏正 金井
Tsutomu Imamura
努 今村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Electric Glass Co Ltd
Original Assignee
Nippon Electric Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Glass Co Ltd filed Critical Nippon Electric Glass Co Ltd
Priority to JP11102120A priority Critical patent/JP2000292601A/en
Publication of JP2000292601A publication Critical patent/JP2000292601A/en
Pending legal-status Critical Current

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  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Surface Treatment Of Optical Elements (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a conducting reflection preventive film which can decrease reflection light, increase contrast, prevent electrification and shield electromagnetic wave, which provides such an image that is not viewed double even if it is applied to cathode-ray tube using high light transmittance glass panel. SOLUTION: This conducting reflection preventive film comprises four layers formed on a substrate. The layers consists of the first layer, the second layer, the third layer and the fourth layer in order from the substrate. The first layer is transparent conducting layer whose refractive index is 1.7-2.4 and has a geometrical thickness of 0.5-40 nm. The second layer is transparent layer whose refractive index is 1.4-1.6 and has a geometrical thickness of 5-40 nm. The third layer is colored layer comprising TiCON and has geometrical thickness of 10-80 nm. The fourth layer is transparent layer whose refractive index is 1.4-1.6 and has geometrical thickness of 50-200 nm.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、導電性反射防止膜に関
し、特に400℃以上の熱処理が施される陰極線管用ガ
ラスパネルの前面に形成するのに適した導電性反射防止
膜に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a conductive anti-reflection film, and more particularly to a conductive anti-reflection film suitable for forming on a front surface of a glass panel for a cathode ray tube to be subjected to a heat treatment at 400 DEG C. or more. .

【0002】[0002]

【従来の技術】従来より、陰極線管の表示面であるパネ
ル前面には、反射光の低減やコントラストの向上が要求
されており、最近では、帯電防止や人体に悪影響を及ぼ
す極低周波の電磁波を遮蔽することも求められるように
なってきている。
2. Description of the Related Art Conventionally, it has been required to reduce reflected light and improve contrast on the front surface of a panel, which is a display surface of a cathode ray tube. There is also an increasing demand for shielding.

【0003】そのため、陰極線管のパネル前面に各種の
多層膜を形成することによって、陰極線管に、反射光の
低減、コントラストの向上、帯電防止及び電磁波遮蔽の
機能を付与することが試みられており、これらの特性を
満足させる導電性反射防止膜として、例えば、特表平6
−510382号公報には、基体側から順に、NbNを
含む層、TiO2を含む層、SiO2を含む層からなる導
電性反射防止膜が提案されている。
[0003] Therefore, it has been attempted to provide a cathode ray tube with functions of reducing reflected light, improving contrast, preventing static electricity, and shielding electromagnetic waves by forming various multilayer films on the front surface of the panel of the cathode ray tube. As a conductive anti-reflection film satisfying these characteristics, for example,
Japanese Patent Application Laid-Open No. 510382 proposes a conductive antireflection film composed of a layer containing NbN, a layer containing TiO 2, and a layer containing SiO 2 in order from the substrate side.

【0004】また、特開平9−156964号公報に
は、基体側から順に、Ti、Zr及びHfから選ばれた
金属の酸化物を主成分とする層、SiO2層からなる導
電性反射防止膜が提案されている。
Japanese Patent Application Laid-Open No. 9-156964 discloses a conductive antireflection film comprising a layer mainly composed of an oxide of a metal selected from Ti, Zr and Hf, and a SiO 2 layer, in this order from the substrate side. Has been proposed.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、特表平
6−510382号公報や特開平9−156964号に
開示された導電性反射防止膜は、裏面反射率が高いNb
NやTiN等の吸収層を有する着色膜であり、これを光
透過率の高いガラスからなる陰極線管用ガラスパネル上
に形成すると、陰極線管に映し出された映像が二重に見
えやすいという欠点を有している。
However, the conductive anti-reflection film disclosed in Japanese Patent Application Laid-Open No. 6-510382 and Japanese Patent Application Laid-Open No. 9-156964 has Nb having a high back surface reflectivity.
This is a colored film having an absorption layer such as N or TiN. If this film is formed on a glass panel for a cathode ray tube made of glass having a high light transmittance, there is a drawback that an image projected on the cathode ray tube tends to be doubled. are doing.

【0006】また、従来の導電性反射防止膜は、400
℃以上の熱処理の前後で反射率の変動が大きく、抵抗値
の変動も大きいので、反射光の低減、電磁波遮蔽能力の
点で問題がある。
Further, the conventional conductive anti-reflection film has a thickness of 400
The change in the reflectance and the change in the resistance before and after the heat treatment at a temperature of not less than ° C. are large, and thus there is a problem in the reduction of the reflected light and the electromagnetic wave shielding ability.

【0007】本発明の目的は、反射光の低減、コントラ
ストの向上、帯電防止及び電磁波遮蔽の能力を有し、し
かも光透過率の高いガラスパネルを用いて作製した陰極
線管であっても映像を映したとき、映像が二重に見える
ことのない導電性反射防止膜を提供することである。
It is an object of the present invention to reduce the reflected light, improve the contrast, prevent static electricity and shield electromagnetic waves, and furthermore, it is possible to display images even with a cathode ray tube manufactured using a glass panel having a high light transmittance. An object of the present invention is to provide a conductive anti-reflection film which does not cause a double image when viewed.

【0008】[0008]

【課題を解決するための手段】本発明の導電性反射防止
膜は、基体上に形成される4つの層を含み、基体側から
順に第1、第2、第3、第4の層と呼ぶ時、第1の層
は、屈折率が1.7〜2.4の透明導電層で、0.5〜
40nmの幾何学的厚みを有し、第2の層は、屈折率が
1.4〜1.6の透明層で、5〜40nmの幾何学的厚
みを有し、第3の層は、TiCONからなる着色層で、
10〜80nmの幾何学的厚みを有し、第4の層は、屈
折率が1.4〜1.6の透明層で、50〜200nmの
幾何学的厚みを有することを特徴とする。
The conductive antireflection film of the present invention includes four layers formed on a substrate, and is referred to as a first, second, third, and fourth layers in order from the substrate side. At this time, the first layer is a transparent conductive layer having a refractive index of 1.7 to 2.4,
The second layer is a transparent layer having a refractive index of 1.4 to 1.6, has a geometric thickness of 5 to 40 nm, and the third layer is made of TiCON. With a colored layer consisting of
The fourth layer has a geometric thickness of 10 to 80 nm, and the fourth layer is a transparent layer having a refractive index of 1.4 to 1.6, and has a geometric thickness of 50 to 200 nm.

【0009】[0009]

【作用】本発明において、最も基体側に形成される第1
の層は、0.5〜40nmの幾何学的厚みを有する屈折
率が1.7〜2.4の透明導電層であり、表面反射光の
低減、裏面反射光の低減、及び導電性を付与する作用を
有している。膜の導電性、成膜性、生産コスト等を考慮
すると、SnO2、In23及びZnOの1種からなる
透明導電層やITOと称するSnO2とIn23とから
なる透明導電層等であることが好ましい。また、透明導
電層の導電性を調整するために、SnにはSbを、Zn
にはAl等をドーピング材として使用することも可能で
ある。
According to the present invention, the first substrate formed closest to the substrate is used.
Is a transparent conductive layer having a geometric thickness of 0.5 to 40 nm and a refractive index of 1.7 to 2.4, and reduces the surface reflected light, the back surface reflected light, and imparts conductivity. Has the effect of In consideration of the film conductivity, film formability, production cost, etc., a transparent conductive layer made of one of SnO 2 , In 2 O 3 and ZnO or a transparent conductive layer made of SnO 2 and In 2 O 3 called ITO And the like. Also, in order to adjust the conductivity of the transparent conductive layer, Sn is replaced with Sb and Zn is replaced with Zn.
It is also possible to use Al or the like as a doping material.

【0010】第2の層は、5〜40nmの幾何学的厚み
を有する屈折率が1.4〜1.6の透明層であり、表面
反射光の低減及び裏面反射を防止する作用を有してい
る。成膜性、生産コスト等を考慮すると、SiO2、S
34及びAl23から選ばれた少なくとも1種からな
る層、またはSiONの層、もしくはAlONの層であ
ることが好ましい。
The second layer is a transparent layer having a geometric thickness of 5 to 40 nm and a refractive index of 1.4 to 1.6, and has an effect of reducing surface reflected light and preventing back surface reflection. ing. Considering film forming properties, production costs, etc., SiO 2 , S
It is preferably a layer made of at least one selected from i 3 N 4 and Al 2 O 3 , a layer of SiON, or a layer of AlON.

【0011】第3の層は、10〜80nmの幾何学的厚
みを有するTiCONからなる層であり、表面反射光の
低減、裏面反射光の低減及びコントラストを向上させる
着色の作用を有している。
The third layer is a layer made of TiCON having a geometric thickness of 10 to 80 nm, and has a coloring effect of reducing front surface reflected light, reducing rear surface reflected light and improving contrast. .

【0012】第4層は、50〜200nmの幾何学的厚
みを有する屈折率が1.4〜1.6の透明層であり、表
面反射光の低減及び裏面反射光の低減を付与する作用を
有している。成膜性、生産コスト等を考慮するとSiO
2及びSi34から選ばれた少なくとも1種からなる
層、またはSiONの層であることが好ましい。
The fourth layer is a transparent layer having a geometric thickness of 50 to 200 nm and a refractive index of 1.4 to 1.6, and has an effect of reducing front surface reflected light and back surface reflected light. Have. Considering film forming property, production cost, etc., SiO
It is preferably a layer made of at least one selected from 2 and Si 3 N 4 or a layer of SiON.

【0013】本発明の導電性反射防止膜は、上記第1〜
第4の層の干渉効果により表面反射光、裏面反射光の低
減を付与する作用を有しており、上記に記載の屈折率、
膜厚の範囲外であると、干渉効果が得られない。
The conductive anti-reflection film of the present invention comprises
The fourth layer has an effect of providing a reduction in front surface reflected light and back surface reflected light by the interference effect of the fourth layer.
If the thickness is out of the range, the interference effect cannot be obtained.

【0014】本発明においては、上記したような第1〜
第4の層以外にも、膜の密着性をより向上させたり、耐
熱性を付与したり、色調を調整する目的で、付加的な薄
膜層を適宜設けることも可能である。
[0014] In the present invention, the first to the first as described above.
In addition to the fourth layer, an additional thin film layer can be appropriately provided for the purpose of further improving the adhesion of the film, imparting heat resistance, and adjusting the color tone.

【0015】本発明の導電性反射防止膜の成膜方法とし
ては、一般的な薄膜形成手段が使用できる。例えば、ス
パッタリング法、真空蒸着法、CVD法、スピンコート
法、ゾルゲル法などが適用可能であるが、大面積化が容
易であることや膜厚を制御しやすいこと等を考慮すると
スパッタリング法が最も好ましい。
As a method for forming the conductive antireflection film of the present invention, a general thin film forming means can be used. For example, a sputtering method, a vacuum evaporation method, a CVD method, a spin coating method, a sol-gel method, and the like can be applied. However, the sputtering method is most preferable in consideration of easy area enlargement and easy control of the film thickness. preferable.

【0016】[0016]

【実施例】以下、本発明の導電性反射防止膜を実施例に
基づいて詳細に説明する。
EXAMPLES Hereinafter, the conductive antireflection film of the present invention will be described in detail with reference to examples.

【0017】表1及び表2は、実施例1〜6の導電性反
射防止膜と比較例の導電性反射防止膜を示すものであ
る。
Tables 1 and 2 show the conductive antireflection films of Examples 1 to 6 and the conductive antireflection films of Comparative Examples.

【0018】[0018]

【表1】 [Table 1]

【0019】[0019]

【表2】 [Table 2]

【0020】表中の導電性反射防止膜は、次のようにし
て作製した。
The conductive antireflection films in the table were prepared as follows.

【0021】まず、17インチサイズの陰極線管用ガラ
スパネルを準備し、その前面にマグネトロンスパッタ成
膜装置を用いて、表1及び表2に示すような4層構造の
導電性反射防止膜を形成した。表中の膜構成の欄には、
各層の材料と、幾何学的厚みを示した。
First, a glass panel for a cathode ray tube having a size of 17 inches was prepared, and a four-layer conductive antireflection film as shown in Tables 1 and 2 was formed on the front surface of the glass panel by using a magnetron sputtering film forming apparatus. . In the column of membrane composition in the table,
The material of each layer and the geometric thickness are shown.

【0022】こうして得られた各試料を箱型電気炉に入
れ、450℃、60分間の熱処理を行い、熱処理前後の
波長450nm、波長550nm、波長620nmにお
ける反射率と、抵抗値を測定した。
Each of the samples thus obtained was placed in a box-type electric furnace, heat-treated at 450 ° C. for 60 minutes, and the reflectance and resistance at 450 nm, 550 nm, and 620 nm wavelengths before and after the heat treatment were measured.

【0023】その結果、実施例1〜6の各試料は、比較
例の試料に比べて熱処理前と熱処理後の表面反射率の変
動が小さく、抵抗値の変動も小さかった。また、実施例
の各試料は、導電性反射防止膜が着色層を有しているた
め、高いコントラストを実現し、さらに比較例の試料に
比べて導電性反射防止膜の裏面反射率が低いため、映像
が二重に見えることがないと推測される。
As a result, in each of the samples of Examples 1 to 6, the change in the surface reflectance before and after the heat treatment and the change in the resistance value were small before and after the heat treatment. Further, in each sample of the example, since the conductive anti-reflection film has a colored layer, high contrast is realized, and furthermore, the back surface reflectance of the conductive anti-reflection film is lower than that of the sample of the comparative example. It is speculated that the image will not look double.

【0024】尚、表中の導電性反射防止膜の表面反射率
は、瞬間マルチ反射率測定器を用いて15゜正反射を測
定したものである。
The surface reflectivity of the conductive anti-reflection film in the table is obtained by measuring 15 ° regular reflection using an instantaneous multi-reflectance measuring device.

【0025】また、抵抗値は、パネル短辺側の中央部に
超音波ハンダで電極を取り付け、電極間の抵抗をテスタ
ーで測定したものである。_ さらに、裏面反射率は、
瞬間マルチ反射率測定器によって測定した。
The resistance value is obtained by attaching an electrode to the center of the panel on the short side by ultrasonic soldering and measuring the resistance between the electrodes with a tester. _ Furthermore, the backside reflectance is
Measured by an instantaneous multi-reflectometer.

【0026】[0026]

【発明の効果】以上のように本発明の導電性反射防止膜
は、反射光の低減、コントラストの向上、帯電防止及び
電磁波遮蔽について優れた能力を有し、さらに陰極線管
用ガラスパネル上に形成しても、映像が二重に見えるこ
とがないため、陰極線管用ガラスパネル上に成膜される
導電性反射防止膜として好適である。またこれ以外に
も、成膜後に高温の熱処理が施される液晶ディスプレイ
基板やプラズマディスプレイ基板等の各種ディスプレイ
にも適用可能である。
As described above, the conductive anti-reflection film of the present invention has excellent ability to reduce reflected light, improve contrast, prevent charging and shield electromagnetic waves, and is formed on a glass panel for a cathode ray tube. However, since the image does not look double, it is suitable as a conductive antireflection film formed on a glass panel for a cathode ray tube. In addition, the present invention can be applied to various displays such as a liquid crystal display substrate and a plasma display substrate which are subjected to a high-temperature heat treatment after film formation.

フロントページの続き Fターム(参考) 2K009 AA07 BB02 CC02 CC03 EE03 5E321 AA04 BB22 BB23 BB25 GG05 GH01 Continued on the front page F term (reference) 2K009 AA07 BB02 CC02 CC03 EE03 5E321 AA04 BB22 BB23 BB25 GG05 GH01

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 基体上に形成される4つの層を含み、基
体側から順に第1、第2、第3、第4の層と呼ぶ時、第
1の層は、屈折率が1.7〜2.4の透明導電層で、
0.5〜40nmの幾何学的厚みを有し、第2の層は、
屈折率が1.4〜1.6の透明層で、5〜40nmの幾
何学的厚みを有し、第3の層は、TiCONからなる着
色層で、10〜80nmの幾何学的厚みを有し、第4の
層は、屈折率が1.4〜1.6の透明層で、50〜20
0nmの幾何学的厚みを有することを特徴とする導電性
反射防止膜。
The present invention includes four layers formed on a substrate, and when the first, second, third, and fourth layers are referred to in this order from the substrate side, the first layer has a refractive index of 1.7. ~ 2.4 transparent conductive layer,
The second layer has a geometric thickness of 0.5-40 nm,
The transparent layer having a refractive index of 1.4 to 1.6 has a geometric thickness of 5 to 40 nm, and the third layer is a colored layer made of TiCON and has a geometric thickness of 10 to 80 nm. The fourth layer is a transparent layer having a refractive index of 1.4 to 1.6, and has a refractive index of 50 to 20.
A conductive antireflection film having a geometric thickness of 0 nm.
【請求項2】 第1の層は、SnO2、In23及びZ
nOから選ばれた少なくとも1種からなる層である請求
項1に記載の導電性反射防止膜。
2. The first layer is composed of SnO 2 , In 2 O 3 and Z
The conductive antireflection film according to claim 1, wherein the conductive antireflection film is a layer made of at least one selected from nO.
【請求項3】 第2の層は、SiO2、Si34及びA
23から選ばれた少なくとも1種からなる層、または
SiONの層、もしくはAlONの層である請求項1に
記載の導電性反射防止膜。
3. The second layer comprises SiO 2 , Si 3 N 4 and A
at least consisting of one layer or SiON layer, or a conductive antireflection film according to claim 1 is a layer of AlON, selected from l 2 O 3.
【請求項4】 第4の層は、SiO2及びSi34から
選ばれた少なくとも1種からなる層、またはSiONの
層である請求項1に記載の導電性反射防止膜。
4. The conductive antireflection film according to claim 1, wherein the fourth layer is a layer made of at least one selected from SiO 2 and Si 3 N 4 or a layer of SiON.
JP11102120A 1999-04-09 1999-04-09 Conducting reflection preventive film Pending JP2000292601A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11102120A JP2000292601A (en) 1999-04-09 1999-04-09 Conducting reflection preventive film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11102120A JP2000292601A (en) 1999-04-09 1999-04-09 Conducting reflection preventive film

Publications (1)

Publication Number Publication Date
JP2000292601A true JP2000292601A (en) 2000-10-20

Family

ID=14318947

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11102120A Pending JP2000292601A (en) 1999-04-09 1999-04-09 Conducting reflection preventive film

Country Status (1)

Country Link
JP (1) JP2000292601A (en)

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