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GB2605167B - A wafer for the CVD growth of uniform graphene and method of manufacture therof - Google Patents

A wafer for the CVD growth of uniform graphene and method of manufacture therof Download PDF

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Publication number
GB2605167B
GB2605167B GB2104140.5A GB202104140A GB2605167B GB 2605167 B GB2605167 B GB 2605167B GB 202104140 A GB202104140 A GB 202104140A GB 2605167 B GB2605167 B GB 2605167B
Authority
GB
United Kingdom
Prior art keywords
wafer
cvd growth
uniform graphene
therof
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB2104140.5A
Other versions
GB202104140D0 (en
GB2605167A (en
Inventor
Dixon Sebastian
Kainth Jaspreet
Jagt Robert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Paragraf Ltd
Original Assignee
Paragraf Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Paragraf Ltd filed Critical Paragraf Ltd
Priority to GB2502309.4A priority Critical patent/GB2635298A/en
Priority to GB2104140.5A priority patent/GB2605167B/en
Publication of GB202104140D0 publication Critical patent/GB202104140D0/en
Priority to GB2110027.6A priority patent/GB2605211B/en
Priority to JP2023558487A priority patent/JP7757414B2/en
Priority to EP22711247.1A priority patent/EP4314377A1/en
Priority to US18/283,728 priority patent/US20240153762A1/en
Priority to KR1020237031823A priority patent/KR102902155B1/en
Priority to PCT/EP2022/056398 priority patent/WO2022200083A1/en
Priority to GB2203995.2A priority patent/GB2607410B/en
Priority to DE112022001740.6T priority patent/DE112022001740T5/en
Priority to GB2218951.8A priority patent/GB2615867B/en
Priority to PCT/EP2022/057497 priority patent/WO2022200351A1/en
Priority to TW111111013A priority patent/TWI836383B/en
Priority to TW111111012A priority patent/TWI809778B/en
Priority to TW113105883A priority patent/TWI881715B/en
Publication of GB2605167A publication Critical patent/GB2605167A/en
Priority to US18/283,770 priority patent/US20240166521A1/en
Application granted granted Critical
Publication of GB2605167B publication Critical patent/GB2605167B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/403—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • H10P14/24—
    • H10P14/2905—
    • H10P14/3238—
    • H10P14/3248—
    • H10P14/3406—
    • H10P14/6339—
    • H10P14/668—
    • H10P14/69391—
    • H10P90/00—

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
GB2104140.5A 2021-03-24 2021-03-24 A wafer for the CVD growth of uniform graphene and method of manufacture therof Active GB2605167B (en)

Priority Applications (16)

Application Number Priority Date Filing Date Title
GB2502309.4A GB2635298A (en) 2021-03-24 2021-03-24 A wafer for the CVD growth of uniform graphene and method of manufacture thereof
GB2104140.5A GB2605167B (en) 2021-03-24 2021-03-24 A wafer for the CVD growth of uniform graphene and method of manufacture therof
GB2110027.6A GB2605211B (en) 2021-03-24 2021-07-12 A method of forming a graphene layer structure and a graphene substrate
JP2023558487A JP7757414B2 (en) 2021-03-24 2022-03-11 Wafer for uniform graphene CVD growth and manufacturing method thereof
EP22711247.1A EP4314377A1 (en) 2021-03-24 2022-03-11 A wafer for the cvd growth of uniform graphene and method of manufacture thereof
US18/283,728 US20240153762A1 (en) 2021-03-24 2022-03-11 Wafer for the cvd growth of uniform graphene and method of manufacture thereof
KR1020237031823A KR102902155B1 (en) 2021-03-24 2022-03-11 Wafer for CVD growth of uniform graphene and method for manufacturing the same
PCT/EP2022/056398 WO2022200083A1 (en) 2021-03-24 2022-03-11 A wafer for the cvd growth of uniform graphene and method of manufacture thereof
GB2203995.2A GB2607410B (en) 2021-03-24 2022-03-22 A method of forming a graphene layer structure and a graphene substrate
DE112022001740.6T DE112022001740T5 (en) 2021-03-24 2022-03-22 Method for forming a graphene layer structure and a graphene substrate
GB2218951.8A GB2615867B (en) 2021-03-24 2022-03-22 A method of forming a graphene layer structure and a graphene substrate
PCT/EP2022/057497 WO2022200351A1 (en) 2021-03-24 2022-03-22 A method of forming a graphene layer structure and a graphene substrate
TW111111013A TWI836383B (en) 2021-03-24 2022-03-24 A method of forming a graphene layer structure and a graphene substrate
TW111111012A TWI809778B (en) 2021-03-24 2022-03-24 A wafer for the cvd growth of uniform graphene and method of manufacture thereof
TW113105883A TWI881715B (en) 2021-03-24 2022-03-24 A method of forming a graphene layer structure and a graphene substrate
US18/283,770 US20240166521A1 (en) 2021-03-24 2023-03-22 A method of forming a graphene layer structure and a graphene substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2104140.5A GB2605167B (en) 2021-03-24 2021-03-24 A wafer for the CVD growth of uniform graphene and method of manufacture therof

Publications (3)

Publication Number Publication Date
GB202104140D0 GB202104140D0 (en) 2021-05-05
GB2605167A GB2605167A (en) 2022-09-28
GB2605167B true GB2605167B (en) 2025-04-09

Family

ID=75690026

Family Applications (2)

Application Number Title Priority Date Filing Date
GB2502309.4A Pending GB2635298A (en) 2021-03-24 2021-03-24 A wafer for the CVD growth of uniform graphene and method of manufacture thereof
GB2104140.5A Active GB2605167B (en) 2021-03-24 2021-03-24 A wafer for the CVD growth of uniform graphene and method of manufacture therof

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB2502309.4A Pending GB2635298A (en) 2021-03-24 2021-03-24 A wafer for the CVD growth of uniform graphene and method of manufacture thereof

Country Status (1)

Country Link
GB (2) GB2635298A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116534849A (en) * 2023-05-06 2023-08-04 湖北隆中实验室 Method for inhibiting multilayer nucleation in CVD single-layer graphene

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010029092A1 (en) * 1999-12-27 2001-10-11 Dae-Gyu Park Method for forming aluminum oxide as a gate dielectric
US20050142715A1 (en) * 2003-12-26 2005-06-30 Fujitsu Limited Semiconductor device with high dielectric constant insulator and its manufacture
US20110175060A1 (en) * 2010-01-21 2011-07-21 Makoto Okai Graphene grown substrate and electronic/photonic integrated circuits using same
JP2013152969A (en) * 2012-01-24 2013-08-08 Hitachi Ltd Graphene transistor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010029092A1 (en) * 1999-12-27 2001-10-11 Dae-Gyu Park Method for forming aluminum oxide as a gate dielectric
US20050142715A1 (en) * 2003-12-26 2005-06-30 Fujitsu Limited Semiconductor device with high dielectric constant insulator and its manufacture
US20110175060A1 (en) * 2010-01-21 2011-07-21 Makoto Okai Graphene grown substrate and electronic/photonic integrated circuits using same
JP2013152969A (en) * 2012-01-24 2013-08-08 Hitachi Ltd Graphene transistor

Also Published As

Publication number Publication date
GB202104140D0 (en) 2021-05-05
GB2635298A (en) 2025-05-07
GB2605167A (en) 2022-09-28
GB202502309D0 (en) 2025-04-02

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