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GB2336241B - Substrate-triggering electrostatic dicharge protection circuit for deep-submicron integrated circuits - Google Patents

Substrate-triggering electrostatic dicharge protection circuit for deep-submicron integrated circuits

Info

Publication number
GB2336241B
GB2336241B GB9807601A GB9807601A GB2336241B GB 2336241 B GB2336241 B GB 2336241B GB 9807601 A GB9807601 A GB 9807601A GB 9807601 A GB9807601 A GB 9807601A GB 2336241 B GB2336241 B GB 2336241B
Authority
GB
United Kingdom
Prior art keywords
dicharge
deep
substrate
integrated circuits
protection circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9807601A
Other versions
GB2336241A (en
GB9807601D0 (en
Inventor
Ming-Dou Ker
Tung-Yang Chen
Chung-Yu Wu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
United Microelectronics Corp
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from TW087100473A external-priority patent/TW363261B/en
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to GB9807601A priority Critical patent/GB2336241B/en
Priority to DE19818985A priority patent/DE19818985B4/en
Priority to FR9805411A priority patent/FR2773643B1/en
Publication of GB9807601D0 publication Critical patent/GB9807601D0/en
Publication of GB2336241A publication Critical patent/GB2336241A/en
Application granted granted Critical
Publication of GB2336241B publication Critical patent/GB2336241B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/8311—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different channel structures
GB9807601A 1998-01-15 1998-04-08 Substrate-triggering electrostatic dicharge protection circuit for deep-submicron integrated circuits Expired - Fee Related GB2336241B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB9807601A GB2336241B (en) 1998-01-15 1998-04-08 Substrate-triggering electrostatic dicharge protection circuit for deep-submicron integrated circuits
DE19818985A DE19818985B4 (en) 1998-01-15 1998-04-28 ESD protection circuit
FR9805411A FR2773643B1 (en) 1998-01-15 1998-04-29 CIRCUIT FOR PROTECTION AGAINST ELECTROSTATIC DISCHARGES OF TRIGGERING SUBSTRATE ON AN INTEGRATED DEPTH OF INTEGRATED CIRCUIT

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW087100473A TW363261B (en) 1998-01-15 1998-01-15 Protection circuit for substrate triggering electrostatic discharge
GB9807601A GB2336241B (en) 1998-01-15 1998-04-08 Substrate-triggering electrostatic dicharge protection circuit for deep-submicron integrated circuits

Publications (3)

Publication Number Publication Date
GB9807601D0 GB9807601D0 (en) 1998-06-10
GB2336241A GB2336241A (en) 1999-10-13
GB2336241B true GB2336241B (en) 2000-06-14

Family

ID=26313448

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9807601A Expired - Fee Related GB2336241B (en) 1998-01-15 1998-04-08 Substrate-triggering electrostatic dicharge protection circuit for deep-submicron integrated circuits

Country Status (3)

Country Link
DE (1) DE19818985B4 (en)
FR (1) FR2773643B1 (en)
GB (1) GB2336241B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW575989B (en) * 2002-09-25 2004-02-11 Mediatek Inc NPN Darlington ESD protection circuit

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991005371A1 (en) * 1989-09-27 1991-04-18 David Sarnoff Research Center, Inc. Nmos device with integral esd protection
EP0549320A1 (en) * 1991-12-27 1993-06-30 Texas Instruments Incorporated Method and apparatus for ESD protection
GB2273831A (en) * 1992-12-24 1994-06-29 Motorola Semiconducteurs Overvoltage protection circuit; electrostatic discharge protection
GB2304994A (en) * 1995-09-05 1997-03-26 Winbond Electronics Corp Capacitor couple electrostatic discharge protection circuit

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2679046B2 (en) * 1987-05-22 1997-11-19 ソニー株式会社 Memory device
JPH02119262A (en) * 1988-10-28 1990-05-07 Toshiba Corp Semiconductor device
DE3907523A1 (en) * 1989-03-08 1990-09-20 Siemens Ag PROTECTIVE CIRCUIT AGAINST OVERVOLTAGE FOR MOS COMPONENTS
JP3149999B2 (en) * 1992-10-31 2001-03-26 日本電気株式会社 Semiconductor input / output protection device
US5543650A (en) * 1995-01-12 1996-08-06 International Business Machines Corporation Electrostatic discharge protection circuit employing a mosfet device
NL1008963C2 (en) * 1998-04-22 1999-10-25 United Microelectronics Corp Protection circuit against electrostatic discharge with substrate triggering for deep submicron integrated circuits.

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991005371A1 (en) * 1989-09-27 1991-04-18 David Sarnoff Research Center, Inc. Nmos device with integral esd protection
EP0549320A1 (en) * 1991-12-27 1993-06-30 Texas Instruments Incorporated Method and apparatus for ESD protection
GB2273831A (en) * 1992-12-24 1994-06-29 Motorola Semiconducteurs Overvoltage protection circuit; electrostatic discharge protection
GB2304994A (en) * 1995-09-05 1997-03-26 Winbond Electronics Corp Capacitor couple electrostatic discharge protection circuit

Also Published As

Publication number Publication date
FR2773643B1 (en) 2002-01-18
GB2336241A (en) 1999-10-13
DE19818985A1 (en) 1999-07-22
DE19818985B4 (en) 2005-10-06
GB9807601D0 (en) 1998-06-10
FR2773643A1 (en) 1999-07-16

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20100408