GB2133621B - Junction field effect transistor - Google Patents
Junction field effect transistorInfo
- Publication number
- GB2133621B GB2133621B GB08334364A GB8334364A GB2133621B GB 2133621 B GB2133621 B GB 2133621B GB 08334364 A GB08334364 A GB 08334364A GB 8334364 A GB8334364 A GB 8334364A GB 2133621 B GB2133621 B GB 2133621B
- Authority
- GB
- United Kingdom
- Prior art keywords
- field effect
- effect transistor
- junction field
- junction
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/83—FETs having PN junction gate electrodes
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB08334364A GB2133621B (en) | 1983-01-11 | 1983-12-23 | Junction field effect transistor |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB838300617A GB8300617D0 (en) | 1983-01-11 | 1983-01-11 | Junction field effect transistor |
| GB08334364A GB2133621B (en) | 1983-01-11 | 1983-12-23 | Junction field effect transistor |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB8334364D0 GB8334364D0 (en) | 1984-02-01 |
| GB2133621A GB2133621A (en) | 1984-07-25 |
| GB2133621B true GB2133621B (en) | 1987-02-04 |
Family
ID=26284879
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB08334364A Expired GB2133621B (en) | 1983-01-11 | 1983-12-23 | Junction field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2133621B (en) |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1279395A (en) * | 1968-10-11 | 1972-06-28 | Nat Res Dev | Improvements relating to field effect transistors |
| FR2157740B1 (en) * | 1971-10-29 | 1976-10-29 | Thomson Csf | |
| JPS524426B2 (en) * | 1973-04-20 | 1977-02-03 | ||
| FR2294544A1 (en) * | 1974-12-13 | 1976-07-09 | Thomson Csf | MANUFACTURING PROCESS, IN AN INTEGRATED CIRCUIT, OF FIELD EFFECT TRANSISTORS INTENDED TO OPERATE AT VERY HIGH FREQUENCY, AND STRUCTURE OR DEVICES OBTAINED |
| GB1563913A (en) * | 1975-12-12 | 1980-04-02 | Hughes Aircraft Co | Method of making schottky-barrier gallium arsenide field effect devices |
| NL184552C (en) * | 1978-07-24 | 1989-08-16 | Philips Nv | SEMICONDUCTOR FOR HIGH VOLTAGES. |
| GB2070858B (en) * | 1980-03-03 | 1985-02-06 | Raytheon Co | Shallow channel field effect transistor |
| GB2094058B (en) * | 1981-03-03 | 1985-02-13 | Standard Telephones Cables Ltd | Fabricating integrated circuit field effect transistors |
-
1983
- 1983-12-23 GB GB08334364A patent/GB2133621B/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB2133621A (en) | 1984-07-25 |
| GB8334364D0 (en) | 1984-02-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 732 | Registration of transactions, instruments or events in the register (sect. 32/1977) | ||
| PCNP | Patent ceased through non-payment of renewal fee |