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GB2070858B - Shallow channel field effect transistor - Google Patents

Shallow channel field effect transistor

Info

Publication number
GB2070858B
GB2070858B GB8102529A GB8102529A GB2070858B GB 2070858 B GB2070858 B GB 2070858B GB 8102529 A GB8102529 A GB 8102529A GB 8102529 A GB8102529 A GB 8102529A GB 2070858 B GB2070858 B GB 2070858B
Authority
GB
United Kingdom
Prior art keywords
field effect
effect transistor
channel field
shallow channel
shallow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8102529A
Other versions
GB2070858A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of GB2070858A publication Critical patent/GB2070858A/en
Application granted granted Critical
Publication of GB2070858B publication Critical patent/GB2070858B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H10D30/0327—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon on sapphire substrates, e.g. of silicon-on-sapphire [SOS] transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/051—Manufacture or treatment of FETs having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H10D30/615—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel comprising a MOS gate electrode and at least one non-MOS gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/832—Thin-film junction FETs [JFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/875—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having thin-film semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
GB8102529A 1980-03-03 1981-01-28 Shallow channel field effect transistor Expired GB2070858B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12678780A 1980-03-03 1980-03-03

Publications (2)

Publication Number Publication Date
GB2070858A GB2070858A (en) 1981-09-09
GB2070858B true GB2070858B (en) 1985-02-06

Family

ID=22426654

Family Applications (2)

Application Number Title Priority Date Filing Date
GB8102529A Expired GB2070858B (en) 1980-03-03 1981-01-28 Shallow channel field effect transistor
GB08326563A Expired GB2140616B (en) 1980-03-03 1983-10-04 Shallow channel field effect transistor

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB08326563A Expired GB2140616B (en) 1980-03-03 1983-10-04 Shallow channel field effect transistor

Country Status (3)

Country Link
JP (1) JPS56135977A (en)
DE (1) DE3107909A1 (en)
GB (2) GB2070858B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5873165A (en) * 1981-10-27 1983-05-02 Sumitomo Electric Ind Ltd Schottky gate field effect transistor and manufacture thereof
JPS5879771A (en) * 1981-11-06 1983-05-13 Sumitomo Electric Ind Ltd Semiconductor device and manufacture thereof
FR2527385B1 (en) * 1982-04-13 1987-05-22 Suwa Seikosha Kk THIN FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY PANEL USING THIS TYPE OF TRANSISTOR
GB2133621B (en) * 1983-01-11 1987-02-04 Emi Ltd Junction field effect transistor
FR2663464B1 (en) * 1990-06-19 1992-09-11 Commissariat Energie Atomique INTEGRATED CIRCUIT IN SILICON-ON-INSULATION TECHNOLOGY COMPRISING A FIELD-EFFECT TRANSISTOR AND ITS MANUFACTURING METHOD.

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1155578A (en) * 1965-10-08 1969-06-18 Sony Corp Field Effect Transistor
US4063271A (en) * 1972-07-26 1977-12-13 Texas Instruments Incorporated FET and bipolar device and circuit process with maximum junction control
GB1507091A (en) * 1974-03-29 1978-04-12 Siemens Ag Schottky-gate field-effect transistors
JPS5381087A (en) * 1976-12-27 1978-07-18 Fujitsu Ltd Gallium aresenide field effect transistor
NL184552C (en) * 1978-07-24 1989-08-16 Philips Nv SEMICONDUCTOR FOR HIGH VOLTAGES.
JPS55153377A (en) * 1979-05-18 1980-11-29 Matsushita Electronics Corp Production of semiconductor device
FR2460543A1 (en) * 1979-06-29 1981-01-23 Radiotechnique Compelec FIELD-TYPE FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
JPS5658259A (en) * 1979-10-18 1981-05-21 Toshiba Corp Semiconductor device and production thereof

Also Published As

Publication number Publication date
GB2070858A (en) 1981-09-09
GB2140616A (en) 1984-11-28
GB8326563D0 (en) 1983-11-02
JPS56135977A (en) 1981-10-23
GB2140616B (en) 1985-06-19
DE3107909A1 (en) 1982-03-25

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee