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GB2094058B - Fabricating integrated circuit field effect transistors - Google Patents

Fabricating integrated circuit field effect transistors

Info

Publication number
GB2094058B
GB2094058B GB8106689A GB8106689A GB2094058B GB 2094058 B GB2094058 B GB 2094058B GB 8106689 A GB8106689 A GB 8106689A GB 8106689 A GB8106689 A GB 8106689A GB 2094058 B GB2094058 B GB 2094058B
Authority
GB
United Kingdom
Prior art keywords
integrated circuit
field effect
effect transistors
circuit field
fabricating integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8106689A
Other versions
GB2094058A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB8106689A priority Critical patent/GB2094058B/en
Publication of GB2094058A publication Critical patent/GB2094058A/en
Application granted granted Critical
Publication of GB2094058B publication Critical patent/GB2094058B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/877—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having recessed gate electrodes
    • H10P14/6312—
    • H10P14/6324—
GB8106689A 1981-03-03 1981-03-03 Fabricating integrated circuit field effect transistors Expired GB2094058B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB8106689A GB2094058B (en) 1981-03-03 1981-03-03 Fabricating integrated circuit field effect transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8106689A GB2094058B (en) 1981-03-03 1981-03-03 Fabricating integrated circuit field effect transistors

Publications (2)

Publication Number Publication Date
GB2094058A GB2094058A (en) 1982-09-08
GB2094058B true GB2094058B (en) 1985-02-13

Family

ID=10520116

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8106689A Expired GB2094058B (en) 1981-03-03 1981-03-03 Fabricating integrated circuit field effect transistors

Country Status (1)

Country Link
GB (1) GB2094058B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2133621B (en) * 1983-01-11 1987-02-04 Emi Ltd Junction field effect transistor

Also Published As

Publication number Publication date
GB2094058A (en) 1982-09-08

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Legal Events

Date Code Title Description
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee