GB2131605B - Thin film transistor - Google Patents
Thin film transistorInfo
- Publication number
- GB2131605B GB2131605B GB08326775A GB8326775A GB2131605B GB 2131605 B GB2131605 B GB 2131605B GB 08326775 A GB08326775 A GB 08326775A GB 8326775 A GB8326775 A GB 8326775A GB 2131605 B GB2131605 B GB 2131605B
- Authority
- GB
- United Kingdom
- Prior art keywords
- thin film
- film transistor
- transistor
- thin
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6728—Vertical TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/366—Multistable devices; Devices having two or more distinct operating states
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/38—Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H10D48/381—Multistable devices; Devices having two or more distinct operating states
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
-
- H10W20/491—
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10301179A | 1979-12-13 | 1979-12-13 | |
| US20827880A | 1980-11-19 | 1980-11-19 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB8326775D0 GB8326775D0 (en) | 1983-11-09 |
| GB2131605A GB2131605A (en) | 1984-06-20 |
| GB2131605B true GB2131605B (en) | 1985-02-13 |
Family
ID=26799985
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB8039608A Expired GB2067353B (en) | 1979-12-13 | 1980-12-10 | Thin film transistor |
| GB08326775A Expired GB2131605B (en) | 1979-12-13 | 1983-10-06 | Thin film transistor |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB8039608A Expired GB2067353B (en) | 1979-12-13 | 1980-12-10 | Thin film transistor |
Country Status (14)
| Country | Link |
|---|---|
| KR (2) | KR840001605B1 (en) |
| AU (2) | AU538008B2 (en) |
| BE (1) | BE886630A (en) |
| CA (3) | CA1153480A (en) |
| DE (2) | DE3051063C2 (en) |
| FR (1) | FR2474763B1 (en) |
| GB (2) | GB2067353B (en) |
| IE (1) | IE51076B1 (en) |
| IL (1) | IL61679A (en) |
| IT (1) | IT1193999B (en) |
| MX (1) | MX151189A (en) |
| NL (2) | NL8006770A (en) |
| SE (1) | SE8008738L (en) |
| SG (1) | SG72684G (en) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5698864A (en) * | 1982-04-13 | 1997-12-16 | Seiko Epson Corporation | Method of manufacturing a liquid crystal device having field effect transistors |
| FR2527385B1 (en) * | 1982-04-13 | 1987-05-22 | Suwa Seikosha Kk | THIN FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY PANEL USING THIS TYPE OF TRANSISTOR |
| US6294796B1 (en) | 1982-04-13 | 2001-09-25 | Seiko Epson Corporation | Thin film transistors and active matrices including same |
| US5736751A (en) * | 1982-04-13 | 1998-04-07 | Seiko Epson Corporation | Field effect transistor having thick source and drain regions |
| US5677547A (en) * | 1982-04-30 | 1997-10-14 | Seiko Epson Corporation | Thin film transistor and display device including same |
| US5365079A (en) * | 1982-04-30 | 1994-11-15 | Seiko Epson Corporation | Thin film transistor and display device including same |
| US5650637A (en) * | 1982-04-30 | 1997-07-22 | Seiko Epson Corporation | Active matrix assembly |
| US4633284A (en) * | 1983-11-08 | 1986-12-30 | Energy Conversion Devices, Inc. | Thin film transistor having an annealed gate oxide and method of making same |
| US4543320A (en) * | 1983-11-08 | 1985-09-24 | Energy Conversion Devices, Inc. | Method of making a high performance, small area thin film transistor |
| US4547789A (en) * | 1983-11-08 | 1985-10-15 | Energy Conversion Devices, Inc. | High current thin film transistor |
| US4620208A (en) * | 1983-11-08 | 1986-10-28 | Energy Conversion Devices, Inc. | High performance, small area thin film transistor |
| US4752814A (en) * | 1984-03-12 | 1988-06-21 | Xerox Corporation | High voltage thin film transistor |
| US4769338A (en) * | 1984-05-14 | 1988-09-06 | Energy Conversion Devices, Inc. | Thin film field effect transistor and method of making same |
| US4670763A (en) * | 1984-05-14 | 1987-06-02 | Energy Conversion Devices, Inc. | Thin film field effect transistor |
| US4668968A (en) * | 1984-05-14 | 1987-05-26 | Energy Conversion Devices, Inc. | Integrated circuit compatible thin film field effect transistor and method of making same |
| US4673957A (en) * | 1984-05-14 | 1987-06-16 | Energy Conversion Devices, Inc. | Integrated circuit compatible thin film field effect transistor and method of making same |
| KR100741798B1 (en) * | 2004-12-30 | 2007-07-25 | 엘지전자 주식회사 | Dryer integrated washing machine |
| CN112420821B (en) * | 2020-10-29 | 2021-11-19 | 北京元芯碳基集成电路研究院 | Y-shaped gate structure based on carbon-based material and preparation method thereof |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3384792A (en) * | 1965-06-01 | 1968-05-21 | Electro Optical Systems Inc | Stacked electrode field effect triode |
| US4115799A (en) * | 1977-01-26 | 1978-09-19 | Westinghouse Electric Corp. | Thin film copper transition between aluminum and indium copper films |
| US4217374A (en) * | 1978-03-08 | 1980-08-12 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors |
| DE2820331C3 (en) * | 1978-05-10 | 1982-03-18 | Lüder, Ernst, Prof. Dr.-Ing., 7000 Stuttgart | Thin film field effect transistor and process for its manufacture |
| GB2052853A (en) * | 1979-06-29 | 1981-01-28 | Ibm | Vertical fet on an insulating substrate |
-
1980
- 1980-12-09 DE DE3051063A patent/DE3051063C2/de not_active Expired - Fee Related
- 1980-12-09 IL IL61679A patent/IL61679A/en unknown
- 1980-12-09 DE DE3046358A patent/DE3046358C2/en not_active Expired
- 1980-12-10 GB GB8039608A patent/GB2067353B/en not_active Expired
- 1980-12-11 MX MX185169A patent/MX151189A/en unknown
- 1980-12-12 BE BE0/203147A patent/BE886630A/en not_active IP Right Cessation
- 1980-12-12 IE IE2615/80A patent/IE51076B1/en unknown
- 1980-12-12 SE SE8008738A patent/SE8008738L/en unknown
- 1980-12-12 NL NL8006770A patent/NL8006770A/en not_active Application Discontinuation
- 1980-12-12 IT IT26642/80A patent/IT1193999B/en active
- 1980-12-12 KR KR1019800004728A patent/KR840001605B1/en not_active Expired
- 1980-12-12 CA CA000366712A patent/CA1153480A/en not_active Expired
- 1980-12-12 FR FR8026402A patent/FR2474763B1/en not_active Expired
- 1980-12-12 AU AU65313/80A patent/AU538008B2/en not_active Ceased
-
1983
- 1983-05-20 CA CA000428672A patent/CA1163377A/en not_active Expired
- 1983-10-06 GB GB08326775A patent/GB2131605B/en not_active Expired
-
1984
- 1984-05-21 AU AU28451/84A patent/AU554058B2/en not_active Ceased
- 1984-06-18 NL NL8401928A patent/NL8401928A/en not_active Application Discontinuation
- 1984-07-14 KR KR1019840004146A patent/KR850000902B1/en not_active Expired
- 1984-08-01 CA CA000460196A patent/CA1188008A/en not_active Expired
- 1984-10-17 SG SG726/84A patent/SG72684G/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CA1163377A (en) | 1984-03-06 |
| SG72684G (en) | 1985-03-29 |
| KR830004680A (en) | 1983-07-16 |
| MX151189A (en) | 1984-10-09 |
| GB8326775D0 (en) | 1983-11-09 |
| GB2131605A (en) | 1984-06-20 |
| GB2067353B (en) | 1984-07-04 |
| CA1188008A (en) | 1985-05-28 |
| IL61679A0 (en) | 1981-01-30 |
| IE802615L (en) | 1981-06-13 |
| CA1153480A (en) | 1983-09-06 |
| AU6531380A (en) | 1981-06-18 |
| DE3046358A1 (en) | 1981-09-17 |
| SE8008738L (en) | 1981-06-14 |
| DE3051063C2 (en) | 1991-04-11 |
| IL61679A (en) | 1984-11-30 |
| DE3046358C2 (en) | 1987-02-26 |
| FR2474763A1 (en) | 1981-07-31 |
| AU554058B2 (en) | 1986-08-07 |
| GB2067353A (en) | 1981-07-22 |
| BE886630A (en) | 1981-04-01 |
| FR2474763B1 (en) | 1987-03-20 |
| KR840001605B1 (en) | 1984-10-11 |
| IT1193999B (en) | 1988-08-31 |
| NL8006770A (en) | 1981-07-16 |
| AU2845184A (en) | 1984-09-13 |
| NL8401928A (en) | 1984-10-01 |
| KR850000902B1 (en) | 1985-06-26 |
| IT8026642A0 (en) | 1980-12-12 |
| AU538008B2 (en) | 1984-07-26 |
| KR850001478A (en) | 1985-02-18 |
| IE51076B1 (en) | 1986-10-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19921210 |