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GB2033658B - Mosfet device - Google Patents

Mosfet device

Info

Publication number
GB2033658B
GB2033658B GB7935059A GB7935059A GB2033658B GB 2033658 B GB2033658 B GB 2033658B GB 7935059 A GB7935059 A GB 7935059A GB 7935059 A GB7935059 A GB 7935059A GB 2033658 B GB2033658 B GB 2033658B
Authority
GB
United Kingdom
Prior art keywords
mosfet device
mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7935059A
Other versions
GB2033658A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26715426&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=GB2033658(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Publication of GB2033658A publication Critical patent/GB2033658A/en
Application granted granted Critical
Publication of GB2033658B publication Critical patent/GB2033658B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/662—Vertical DMOS [VDMOS] FETs having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/663—Vertical DMOS [VDMOS] FETs having both source contacts and drain contacts on the same surface, i.e. up-drain VDMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10W72/926—
GB7935059A 1978-10-13 1979-10-09 Mosfet device Expired GB2033658B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US95131078A 1978-10-13 1978-10-13
US3866279A 1979-05-14 1979-05-14

Publications (2)

Publication Number Publication Date
GB2033658A GB2033658A (en) 1980-05-21
GB2033658B true GB2033658B (en) 1983-03-02

Family

ID=26715426

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7935059A Expired GB2033658B (en) 1978-10-13 1979-10-09 Mosfet device

Country Status (19)

Country Link
JP (2) JP2622378B2 (en)
AR (1) AR219006A1 (en)
BR (1) BR7906338A (en)
CA (2) CA1123119A (en)
CH (2) CH660649A5 (en)
CS (1) CS222676B2 (en)
DE (2) DE2954481C2 (en)
DK (3) DK157272C (en)
ES (1) ES484652A1 (en)
FR (1) FR2438917A1 (en)
GB (1) GB2033658B (en)
HU (1) HU182506B (en)
IL (1) IL58128A (en)
IT (1) IT1193238B (en)
MX (1) MX147137A (en)
NL (1) NL175358C (en)
PL (1) PL123961B1 (en)
SE (2) SE443682B (en)
SU (1) SU1621817A3 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9431249B2 (en) 2011-12-01 2016-08-30 Vishay-Siliconix Edge termination for super junction MOSFET devices
US9484451B2 (en) 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
US9508596B2 (en) 2014-06-20 2016-11-29 Vishay-Siliconix Processes used in fabricating a metal-insulator-semiconductor field effect transistor

Families Citing this family (44)

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US4593302B1 (en) * 1980-08-18 1998-02-03 Int Rectifier Corp Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide
DE3040775C2 (en) * 1980-10-29 1987-01-15 Siemens AG, 1000 Berlin und 8000 München Controllable MIS semiconductor device
US4412242A (en) 1980-11-17 1983-10-25 International Rectifier Corporation Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions
GB2111745B (en) * 1981-12-07 1985-06-19 Philips Electronic Associated Insulated-gate field-effect transistors
CA1188821A (en) * 1982-09-03 1985-06-11 Patrick W. Clarke Power mosfet integrated circuit
US4532534A (en) * 1982-09-07 1985-07-30 Rca Corporation MOSFET with perimeter channel
DE3346286A1 (en) * 1982-12-21 1984-06-28 International Rectifier Corp., Los Angeles, Calif. High-power metal-oxide field-effect transistor semiconductor component
JPS59167066A (en) * 1983-03-14 1984-09-20 Nissan Motor Co Ltd Vertical type metal oxide semiconductor field effect transistor
JPS6010677A (en) * 1983-06-30 1985-01-19 Nissan Motor Co Ltd Vertical mos transistor
JPH0247874A (en) * 1988-08-10 1990-02-16 Fuji Electric Co Ltd Manufacture of mos semiconductor device
US5766966A (en) * 1996-02-09 1998-06-16 International Rectifier Corporation Power transistor device having ultra deep increased concentration region
IT1247293B (en) * 1990-05-09 1994-12-12 Int Rectifier Corp POWER TRANSISTOR DEVICE PRESENTING AN ULTRA-DEEP REGION, AT A GREATER CONCENTRATION
US5404040A (en) * 1990-12-21 1995-04-04 Siliconix Incorporated Structure and fabrication of power MOSFETs, including termination structures
US5304831A (en) * 1990-12-21 1994-04-19 Siliconix Incorporated Low on-resistance power MOS technology
IT1250233B (en) * 1991-11-29 1995-04-03 St Microelectronics Srl PROCEDURE FOR THE MANUFACTURE OF INTEGRATED CIRCUITS IN MOS TECHNOLOGY.
DE59208987D1 (en) * 1992-08-10 1997-11-27 Siemens Ag Power MOSFET with improved avalanche strength
JPH06268227A (en) * 1993-03-10 1994-09-22 Hitachi Ltd Insulated gate bipolar transistor
EP0660396B1 (en) * 1993-12-24 1998-11-04 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Power MOS device chip and package assembly
DE69321966T2 (en) * 1993-12-24 1999-06-02 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania Power semiconductor device
US5798287A (en) * 1993-12-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Method for forming a power MOS device chip
EP0665597A1 (en) * 1994-01-27 1995-08-02 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe IGBT and manufacturing process therefore
US5817546A (en) * 1994-06-23 1998-10-06 Stmicroelectronics S.R.L. Process of making a MOS-technology power device
EP0689238B1 (en) * 1994-06-23 2002-02-20 STMicroelectronics S.r.l. MOS-technology power device manufacturing process
DE69418037T2 (en) * 1994-08-02 1999-08-26 Consorzio Per La Ricerca Sulla Microelettronica Ne Power semiconductor device made of MOS technology chips and housing structure
US5798554A (en) * 1995-02-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno MOS-technology power device integrated structure and manufacturing process thereof
EP0772242B1 (en) 1995-10-30 2006-04-05 STMicroelectronics S.r.l. Single feature size MOS technology power device
EP0772241B1 (en) * 1995-10-30 2004-06-09 STMicroelectronics S.r.l. High density MOS technology power device
US6228719B1 (en) 1995-11-06 2001-05-08 Stmicroelectronics S.R.L. MOS technology power device with low output resistance and low capacitance, and related manufacturing process
DE69518653T2 (en) * 1995-12-28 2001-04-19 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania MOS technology power arrangement in an integrated structure
EP0961325B1 (en) 1998-05-26 2008-05-07 STMicroelectronics S.r.l. High integration density MOS technology power device
US6563169B1 (en) 1999-04-09 2003-05-13 Shindengen Electric Manufacturing Co., Ltd. Semiconductor device with high withstand voltage and a drain layer having a highly conductive region connectable to a diffused source layer by an inverted layer
JP4122113B2 (en) * 1999-06-24 2008-07-23 新電元工業株式会社 High breakdown strength field effect transistor
US6344379B1 (en) * 1999-10-22 2002-02-05 Semiconductor Components Industries Llc Semiconductor device with an undulating base region and method therefor
JP4845293B2 (en) * 2000-08-30 2011-12-28 新電元工業株式会社 Field effect transistor
JP2006295134A (en) 2005-03-17 2006-10-26 Sanyo Electric Co Ltd Semiconductor device and manufacturing method thereof
US9614043B2 (en) 2012-02-09 2017-04-04 Vishay-Siliconix MOSFET termination trench
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
US10115815B2 (en) 2012-12-28 2018-10-30 Cree, Inc. Transistor structures having a deep recessed P+ junction and methods for making same
US9530844B2 (en) 2012-12-28 2016-12-27 Cree, Inc. Transistor structures having reduced electrical field at the gate oxide and methods for making same
JP5907097B2 (en) * 2013-03-18 2016-04-20 三菱電機株式会社 Semiconductor device
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
EP3183754A4 (en) 2014-08-19 2018-05-02 Vishay-Siliconix Super-junction metal oxide semiconductor field effect transistor
US11489069B2 (en) 2017-12-21 2022-11-01 Wolfspeed, Inc. Vertical semiconductor device with improved ruggedness
US10615274B2 (en) 2017-12-21 2020-04-07 Cree, Inc. Vertical semiconductor device with improved ruggedness

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4015278A (en) * 1974-11-26 1977-03-29 Fujitsu Ltd. Field effect semiconductor device
JPS52106688A (en) * 1976-03-05 1977-09-07 Nec Corp Field-effect transistor
JPS52132684A (en) * 1976-04-29 1977-11-07 Sony Corp Insulating gate type field effect transistor
US4055884A (en) * 1976-12-13 1977-11-01 International Business Machines Corporation Fabrication of power field effect transistors and the resulting structures
JPS5374385A (en) * 1976-12-15 1978-07-01 Hitachi Ltd Manufacture of field effect semiconductor device
US4148047A (en) * 1978-01-16 1979-04-03 Honeywell Inc. Semiconductor apparatus
JPH05185381A (en) * 1992-01-10 1993-07-27 Yuum Kogyo:Kk Handle for edge-replaceable saw

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9484451B2 (en) 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
US9431249B2 (en) 2011-12-01 2016-08-30 Vishay-Siliconix Edge termination for super junction MOSFET devices
US9508596B2 (en) 2014-06-20 2016-11-29 Vishay-Siliconix Processes used in fabricating a metal-insulator-semiconductor field effect transistor

Also Published As

Publication number Publication date
SU1621817A3 (en) 1991-01-15
SE465444B (en) 1991-09-09
JPS6323365A (en) 1988-01-30
PL218878A1 (en) 1980-08-11
DE2954481C2 (en) 1990-12-06
SE7908479L (en) 1980-04-14
CH660649A5 (en) 1987-05-15
ES484652A1 (en) 1980-09-01
IT7926435A0 (en) 1979-10-11
SE8503615D0 (en) 1985-07-26
NL175358B (en) 1984-05-16
HU182506B (en) 1984-01-30
IL58128A (en) 1981-12-31
JPH07169950A (en) 1995-07-04
JP2622378B2 (en) 1997-06-18
DK157272C (en) 1990-04-30
DK512388A (en) 1988-09-15
GB2033658A (en) 1980-05-21
JP2643095B2 (en) 1997-08-20
NL175358C (en) 1984-10-16
DK512488D0 (en) 1988-09-15
DK512388D0 (en) 1988-09-15
DK157272B (en) 1989-11-27
CH642485A5 (en) 1984-04-13
AR219006A1 (en) 1980-07-15
SE8503615L (en) 1985-07-26
NL7907472A (en) 1980-04-15
CA1136291A (en) 1982-11-23
PL123961B1 (en) 1982-12-31
FR2438917A1 (en) 1980-05-09
SE443682B (en) 1986-03-03
IT1193238B (en) 1988-06-15
DK512488A (en) 1988-09-15
DE2940699A1 (en) 1980-04-24
DK350679A (en) 1980-04-14
CA1123119A (en) 1982-05-04
FR2438917B1 (en) 1984-09-07
CS222676B2 (en) 1983-07-29
MX147137A (en) 1982-10-13
DE2940699C2 (en) 1986-04-03
BR7906338A (en) 1980-06-24

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 19991008