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GB1455840A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1455840A
GB1455840A GB5994273A GB5994273A GB1455840A GB 1455840 A GB1455840 A GB 1455840A GB 5994273 A GB5994273 A GB 5994273A GB 5994273 A GB5994273 A GB 5994273A GB 1455840 A GB1455840 A GB 1455840A
Authority
GB
United Kingdom
Prior art keywords
layer
atoms
doped
transistor
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5994273A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of GB1455840A publication Critical patent/GB1455840A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/453—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
    • H01J29/455—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays formed on a silicon substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/233—Manufacture of photoelectric screens or charge-storage screens
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Light Receiving Elements (AREA)
  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
  • Bipolar Transistors (AREA)

Abstract

1455840 Semi-conductor devices WESTINGHOUSE ELECTRIC CORP 28 Dec 1973 [5 Jan 1973] 59942/73 Heading H1K In a semi-conductor device, a Si layer having an impurity concentration less than 10<SP>17</SP> atoms/ cm.<SP>3</SP> and a minority carrier lifetime greater than 50 nanosecs. is epitaxially deposited on a Si layer doped with P or B to a surface concentration greater than 10<SP>19</SP> atoms/cm.<SP>3</SP>, preferably greater than 10<SP>20</SP> atoms/cm.<SP>3</SP> In Fig 1 MOS capacitors are formed on a substrate 10 of spinel or preferably sapphire. A layer 12 of Si is deposited on substrate 10 by pyrolysis of SiH 4 , and is then doped with P derived from PH 3 to a concentration of 10<SP>20</SP>-10<SP>21</SP> atoms/ cm.<SP>3</SP> A second Si layer 13 is similarly formed, being lightly doped with P 1 or As derived from AsH 3 , and is then conventionally masked and etched to form islands, over which a layer 14 of SiO 2 is deposited. Windows 16 are formed in layer 14, and metal, e.g. evaporated Al, is deposited to form electrodes 18 and contacts 17, the latter being subsequently alloyed to the underlying Si layer 12. In the bipolar NPN mega transistor shown in Fig. 10, the substrate is formed by a monocrystalline Si body 20 having an impurity concentration of P of 10<SP>20</SP> atoms/cm.<SP>3</SP> Si layers 22, doped with As to 8 Î 10<SP>14</SP> atoms/cm.<SP>3</SP>, and 24, doped with B to 10<SP>16</SP> atoms/cm.<SP>3</SP>, are epitaxially deposited on body 20, followed by conventional etching, oxide-coating, emitter diffusion, and metallization steps. In modifications, the transistor is formed on a sapphire substrate (33, Fig. 11, not shown) and the emitter region (27<SP>11</SP>, Fig. 12, not shown) is formed by epitaxial deposition. Fig. 15 (not shown) depicts a complementary MOS transistor arrangement formed on a sapphire substrate, and in Fig. 16 (not shown) a similar construction replaces a P<SP>+</SP>N<SP>-</SP>P<SP>+</SP> transistor with a P<SP>+</SP>P<SP>-</SP>P<SP>+</SP> transistor for operation in a deep-depletion enhancement mode. In Fig. 17, an image-sensing target of a TV camera comprises a sapphire substrate 70, an epitaxial layer 72 of heavily doped Si, and a further, lightly doped, epitaxial layer 73. Donor impurities are dffused through windows in an oxide layer 75 to form P-type regions 77, and so produce a mosaic of diodes which, in operation, face the incident radiation 78.
GB5994273A 1973-01-05 1973-12-28 Semiconductor devices Expired GB1455840A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US32140673A 1973-01-05 1973-01-05

Publications (1)

Publication Number Publication Date
GB1455840A true GB1455840A (en) 1976-11-17

Family

ID=23250492

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5994273A Expired GB1455840A (en) 1973-01-05 1973-12-28 Semiconductor devices

Country Status (5)

Country Link
JP (1) JPS50100980A (en)
CA (1) CA1010158A (en)
DE (1) DE2365222A1 (en)
FR (1) FR2213587B1 (en)
GB (1) GB1455840A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2933694A1 (en) * 1978-08-25 1980-03-06 Rca Corp INTEGRATED CIRCUIT
US4959699A (en) * 1978-10-13 1990-09-25 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5338961A (en) * 1978-10-13 1994-08-16 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5931224B2 (en) * 1974-02-18 1984-07-31 日本電気株式会社 semiconductor equipment
JPS5799779A (en) * 1980-12-12 1982-06-21 Citizen Watch Co Ltd Thin-film transistor
JPH0618204B2 (en) * 1987-01-16 1994-03-09 株式会社日立製作所 Method for manufacturing semiconductor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2933694A1 (en) * 1978-08-25 1980-03-06 Rca Corp INTEGRATED CIRCUIT
US4959699A (en) * 1978-10-13 1990-09-25 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5191396A (en) * 1978-10-13 1993-03-02 International Rectifier Corp. High power mosfet with low on-resistance and high breakdown voltage
US5338961A (en) * 1978-10-13 1994-08-16 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5598018A (en) * 1978-10-13 1997-01-28 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5742087A (en) * 1978-10-13 1998-04-21 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices
US6046473A (en) * 1995-06-07 2000-04-04 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of MOS-gated power devices

Also Published As

Publication number Publication date
FR2213587B1 (en) 1977-08-26
DE2365222A1 (en) 1974-07-18
CA1010158A (en) 1977-05-10
FR2213587A1 (en) 1974-08-02
JPS50100980A (en) 1975-08-11

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee