[go: up one dir, main page]

GB1447763A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB1447763A
GB1447763A GB5065572A GB5065572A GB1447763A GB 1447763 A GB1447763 A GB 1447763A GB 5065572 A GB5065572 A GB 5065572A GB 5065572 A GB5065572 A GB 5065572A GB 1447763 A GB1447763 A GB 1447763A
Authority
GB
United Kingdom
Prior art keywords
nov
gold
semi
region
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5065572A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Mobility Ltd
Original Assignee
Westinghouse Brake and Signal Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Brake and Signal Co Ltd filed Critical Westinghouse Brake and Signal Co Ltd
Priority to GB5065572A priority Critical patent/GB1447763A/en
Publication of GB1447763A publication Critical patent/GB1447763A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P32/171—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H10P32/18—

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1447763 Semi-conductor devices WESTING- HOUSE BRAKE & SIGNAL CO Ltd 1 Nov 1973 [2 Nov 1972] 50655/72 Heading H1K A semi-conductor device includes a region modified to retain mobile carriers and subsequently release them for removal by an electric field. The device comprises a silicon wafer doped with gallium to form two PN junctions 17, 18, and with gold which forms trapping centres in the central N region. The device behaves as a symmetrical voltage clipping device. The device may alternatively be a P+NN+ device in which the gold is diffused at above 870‹ C. for one hour.
GB5065572A 1972-11-02 1972-11-02 Semiconductor device Expired GB1447763A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB5065572A GB1447763A (en) 1972-11-02 1972-11-02 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB5065572A GB1447763A (en) 1972-11-02 1972-11-02 Semiconductor device

Publications (1)

Publication Number Publication Date
GB1447763A true GB1447763A (en) 1976-09-02

Family

ID=10456825

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5065572A Expired GB1447763A (en) 1972-11-02 1972-11-02 Semiconductor device

Country Status (1)

Country Link
GB (1) GB1447763A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2116774A (en) * 1982-03-09 1983-09-28 Semitron Cricklade Ltd Transient absorption semiconductor device for voltage surge protection
US4551744A (en) * 1981-07-31 1985-11-05 Hitachi, Ltd. High switching speed semiconductor device containing graded killer impurity
EP0537843A1 (en) * 1991-10-16 1993-04-21 Philips Electronics Uk Limited A two terminal semiconductor device
EP0456825A4 (en) * 1989-11-24 1994-08-03 Institut Problem Upravlenia Akademii Nauk Sssr
US8835976B2 (en) 2012-03-14 2014-09-16 General Electric Company Method and system for ultra miniaturized packages for transient voltage suppressors
US8987858B2 (en) 2013-03-18 2015-03-24 General Electric Company Method and system for transient voltage suppression
US9042072B2 (en) 2012-03-30 2015-05-26 General Electric Company Method and system for lightning protection with distributed transient voltage suppression

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4551744A (en) * 1981-07-31 1985-11-05 Hitachi, Ltd. High switching speed semiconductor device containing graded killer impurity
GB2116774A (en) * 1982-03-09 1983-09-28 Semitron Cricklade Ltd Transient absorption semiconductor device for voltage surge protection
EP0088179A3 (en) * 1982-03-09 1984-08-22 Semitron Cricklade Ltd. Transient absorption semiconductor device
EP0456825A4 (en) * 1989-11-24 1994-08-03 Institut Problem Upravlenia Akademii Nauk Sssr
EP0537843A1 (en) * 1991-10-16 1993-04-21 Philips Electronics Uk Limited A two terminal semiconductor device
US8835976B2 (en) 2012-03-14 2014-09-16 General Electric Company Method and system for ultra miniaturized packages for transient voltage suppressors
US9130365B2 (en) 2012-03-14 2015-09-08 General Electric Company Method and system for ultra miniaturized packages for transient voltage suppressors
US9042072B2 (en) 2012-03-30 2015-05-26 General Electric Company Method and system for lightning protection with distributed transient voltage suppression
US8987858B2 (en) 2013-03-18 2015-03-24 General Electric Company Method and system for transient voltage suppression
US9379189B2 (en) 2013-03-18 2016-06-28 General Electric Company Method and system for transient voltage suppression

Similar Documents

Publication Publication Date Title
ES413258A1 (en) A BINARY INFORMATION STORAGE DEVICE WITH OPTICAL DETECTION, IN AN INTEGRATED CIRCUIT.
GB945738A (en) Miniature semiconductor devices and methods of producing same
GB922617A (en) Semiconductor translating devices and processes for making them
CA1001774A (en) Semiconductor device of the iii-v type having ohmic contacts and method of obtaining said contacts
GB1140139A (en) Process for the production of the semiconductor element and a semiconductor element produced by this process
GB1447763A (en) Semiconductor device
GB849477A (en) Improvements in or relating to semiconductor control devices
GB742237A (en) Improvements in barrier layer cells
GB1504032A (en) Muting circuits
GB1247466A (en) Method for determining excess carrier lifetime in semiconductor devices
GB1472113A (en) Semiconductor device circuits
GB936165A (en) Improvements in or relating to electrical power sources
GB1184797A (en) A Method of Making a Semiconductor Device
GB1168219A (en) Bistable Semiconductor Integrated Device
GB1251456A (en)
GB1215557A (en) A semiconductor photosensitive device
JPS5234674A (en) Semiconductor device
GB1306970A (en) Semiconductor circuit
JPS5346285A (en) Mesa type high breakdown voltage semiconductor device
GB1335037A (en) Field effect transistor
GB940681A (en) Semiconductor devices
GB1107343A (en) Microminiaturised, integrated circuit arrangement
JPS526080A (en) Production method of semiconductor wafer
GB915688A (en) Improvements in semiconductor devices
JPS55117270A (en) Junction breakdown type field programmable cell array semiconductor device

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
435 Patent endorsed 'licences of right' on the date specified (sect. 35/1949)
PCNP Patent ceased through non-payment of renewal fee