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GB1472113A - Semiconductor device circuits - Google Patents

Semiconductor device circuits

Info

Publication number
GB1472113A
GB1472113A GB1680074A GB1680074A GB1472113A GB 1472113 A GB1472113 A GB 1472113A GB 1680074 A GB1680074 A GB 1680074A GB 1680074 A GB1680074 A GB 1680074A GB 1472113 A GB1472113 A GB 1472113A
Authority
GB
United Kingdom
Prior art keywords
region
emitter
gain
transistor
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1680074A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB1472113A publication Critical patent/GB1472113A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/676—Combinations of only thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Thyristors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

1472113 Semi-conductor devices SONY CORP 17 April 1974 [18 April 1973] 16800/74 Heading H1K In a semi-conductor device including or comprising a transistor, e.g. comprising N-type emitter 13, P-type base 12 and N-type collector 11, an additional region 21 of opposite (P) conductivity type is included in the emitter region 13 and has potential control means connected thereto for applying an electrical potential to the additional region 21 which is between the potentials of the emitter and base regions, whereby the gain of the transistor element may be controlled. By forwardly biasing the region 21 the gain of the transistor element is greatly enhanced. As shown, the transistor element with an additional anode region 1 forms a thyristor structure which may be switched by controlling the potential on region 21 to effect the gain of one of the transistor elements of the thyristor. It is arranged that the minority carrier diffusion length in the emitter region is greater than the effective distance between the regions 21 and 12. This may be effected by utilizing the potential control of region 21 to reduce the minority carrier gradient in the emitter region 13. The impurity concentration in the epitaxially formed regions 12 and 13 may be 10<SP>15</SP> to 10<SP>16</SP> atoms/c.c.
GB1680074A 1973-04-18 1974-04-17 Semiconductor device circuits Expired GB1472113A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48043881A JPS49131388A (en) 1973-04-18 1973-04-18

Publications (1)

Publication Number Publication Date
GB1472113A true GB1472113A (en) 1977-05-04

Family

ID=12676034

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1680074A Expired GB1472113A (en) 1973-04-18 1974-04-17 Semiconductor device circuits

Country Status (8)

Country Link
JP (1) JPS49131388A (en)
AT (1) AT373443B (en)
CA (1) CA1015867A (en)
DE (1) DE2418560A1 (en)
FR (1) FR2226750B1 (en)
GB (1) GB1472113A (en)
IT (1) IT1009920B (en)
NL (1) NL7405294A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4250518A (en) 1977-09-08 1981-02-10 The General Electric Company Limited Magnetic field sensor semiconductor devices
FR2481540A1 (en) * 1980-04-23 1981-10-30 Rca Corp REGULATED RESISTANCE SYSTEM FOR USE WITH A REGULATED GAIN SIGNAL AMPLIFIER

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5754969B2 (en) * 1974-04-04 1982-11-20
JPS5753672B2 (en) * 1974-04-10 1982-11-13
JPS57658B2 (en) * 1974-04-16 1982-01-07
JPS5714064B2 (en) * 1974-04-25 1982-03-20
JPS5648983B2 (en) * 1974-05-10 1981-11-19
JPS5718710B2 (en) * 1974-05-10 1982-04-17
DE2705990A1 (en) * 1977-02-12 1978-08-17 Engl Walter L Prof Dr Rer Nat Thyristor containing integrated circuit - has opposite conductivity semiconductor zones deposited in thyristor anode zone, short circuited with anode
DE2706031A1 (en) * 1977-02-12 1978-08-17 Engl Walter L Prof Dr Rer Nat Thyristor containing integrated circuit - has annular zone surrounding thyristor forming zones of specified conductivity related to cathode

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4250518A (en) 1977-09-08 1981-02-10 The General Electric Company Limited Magnetic field sensor semiconductor devices
FR2481540A1 (en) * 1980-04-23 1981-10-30 Rca Corp REGULATED RESISTANCE SYSTEM FOR USE WITH A REGULATED GAIN SIGNAL AMPLIFIER
US4365208A (en) 1980-04-23 1982-12-21 Rca Corporation Gain-controlled amplifier using a controllable alternating-current resistance

Also Published As

Publication number Publication date
FR2226750B1 (en) 1978-03-24
CA1015867A (en) 1977-08-16
NL7405294A (en) 1974-10-22
IT1009920B (en) 1976-12-20
FR2226750A1 (en) 1974-11-15
ATA323074A (en) 1983-05-15
AT373443B (en) 1984-01-25
JPS49131388A (en) 1974-12-17
DE2418560A1 (en) 1974-11-14

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee