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GB1324972A - Semiconductor integrated circuit drive - Google Patents

Semiconductor integrated circuit drive

Info

Publication number
GB1324972A
GB1324972A GB194171A GB194171A GB1324972A GB 1324972 A GB1324972 A GB 1324972A GB 194171 A GB194171 A GB 194171A GB 194171 A GB194171 A GB 194171A GB 1324972 A GB1324972 A GB 1324972A
Authority
GB
United Kingdom
Prior art keywords
region
type
epitaxial layer
substrate
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB194171A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1324972A publication Critical patent/GB1324972A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
    • H10D84/0121—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

1324972 Semi-conductive devices RCA CORPORATION 14 Jan 1971 [19 Jan 1970] 1941/71 Heading H1K An integrated circuit including an NPN and a PNP transistor comprises a P-type substrate 12 on which is an N-type epitaxial layer 16, an N + type first region 30 adjacent to the substrate, a P-type second region 32 between this first region and the epitaxial layer and contacted by a P-type contact region 34, and a P-type region 36 at the surface of the epitaxial layer spaced from the second region 32 and forming a PNP transistor 22. The P-type second region 32 contains doping impurities in a concentration which decreases in the direction away from the substrate. In a further embodiment, Fig. 6 (not shown), the P+ type contact region has a frame-like configuration surrounding the region 36 to improve isolation. Isolation between transistors is provided by P+ type isolation regions 20 extending through the epitaxial layer. The NPN transistor 21 adjacent to the PNP transistor 22 is of conventional form.
GB194171A 1970-01-19 1971-01-14 Semiconductor integrated circuit drive Expired GB1324972A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US373170A 1970-01-19 1970-01-19

Publications (1)

Publication Number Publication Date
GB1324972A true GB1324972A (en) 1973-07-25

Family

ID=21707308

Family Applications (1)

Application Number Title Priority Date Filing Date
GB194171A Expired GB1324972A (en) 1970-01-19 1971-01-14 Semiconductor integrated circuit drive

Country Status (6)

Country Link
BE (1) BE761731A (en)
CA (1) CA928863A (en)
DE (1) DE2101966A1 (en)
FR (1) FR2080915B1 (en)
GB (1) GB1324972A (en)
NL (1) NL7100631A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3302025A1 (en) * 1983-01-22 1984-07-26 Telefunken electronic GmbH, 6000 Frankfurt Process for producing an epitaxial-base transistor
JPS59165455A (en) * 1983-03-10 1984-09-18 Toshiba Corp Semiconductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1541490A (en) * 1966-10-21 1968-10-04 Philips Nv Semiconductor device and method for its manufacture

Also Published As

Publication number Publication date
DE2101966A1 (en) 1971-09-23
BE761731A (en) 1971-07-01
FR2080915B1 (en) 1977-01-28
NL7100631A (en) 1971-07-21
FR2080915A1 (en) 1971-11-26
CA928863A (en) 1973-06-19

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees