[go: up one dir, main page]

GB1373960A - Field effect transistors - Google Patents

Field effect transistors

Info

Publication number
GB1373960A
GB1373960A GB5675071A GB5675071A GB1373960A GB 1373960 A GB1373960 A GB 1373960A GB 5675071 A GB5675071 A GB 5675071A GB 5675071 A GB5675071 A GB 5675071A GB 1373960 A GB1373960 A GB 1373960A
Authority
GB
United Kingdom
Prior art keywords
gate
source
effect transistors
field
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5675071A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Ltd
Original Assignee
Texas Instruments Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Ltd filed Critical Texas Instruments Ltd
Priority to GB5675071A priority Critical patent/GB1373960A/en
Publication of GB1373960A publication Critical patent/GB1373960A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

1373960 Field-effect transistors TEXAS INSTRUMENTS Ltd 7 Dec 1971 56750/71 Heading H1K The Figure shows a plan view of a field-effect transistor having source 1, drain 2, and gate 3 electrodes, the gate electrode being of small width, defining a closed figure, and extending over all its length in directions making no more than a small angle {tan<SP>-1</SP>(¢)} to a given (x) direction. The gate may instead follow the outline of a parallelogram or of a double convex lens. In the embodiment shown the source and drain electrodes contact enhanced conductivity regions 8, 9 of an N type epitaxial layer grown on a P type silicon substrate. The gate electrode is of aluminium and may form an alloy junction or a Schottky barrier. Similar gate arrangements may be provided for IGFETs, and any of the devices may be incorporated in integrated circuits.
GB5675071A 1971-12-07 1971-12-07 Field effect transistors Expired GB1373960A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB5675071A GB1373960A (en) 1971-12-07 1971-12-07 Field effect transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB5675071A GB1373960A (en) 1971-12-07 1971-12-07 Field effect transistors

Publications (1)

Publication Number Publication Date
GB1373960A true GB1373960A (en) 1974-11-13

Family

ID=10477444

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5675071A Expired GB1373960A (en) 1971-12-07 1971-12-07 Field effect transistors

Country Status (1)

Country Link
GB (1) GB1373960A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2917690A1 (en) * 1978-05-09 1979-11-15 Rca Corp INSULATING FIELD EFFECT TRANSISTOR WITH RING-SHAPED GATE

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2917690A1 (en) * 1978-05-09 1979-11-15 Rca Corp INSULATING FIELD EFFECT TRANSISTOR WITH RING-SHAPED GATE

Similar Documents

Publication Publication Date Title
GB1180186A (en) Improvements relating to Field-effect Transistors
KR920010957A (en) Thin film semiconductor devices
EP0335750A3 (en) Vertical power mosfet having high withstand voltage and high switching speed
ATE225568T1 (en) POWER MOSFET MADE OF SILICON CARBIDE
GB1339250A (en) Gate protective device for insulated gate field-effect transistors
GB1129200A (en) High frequency field effect transistor
EP0268426A3 (en) High speed junction field effect transistor for use in bipolar integrated circuits
GB1327920A (en) Transistor and method of manufacturing the same
GB1226080A (en)
GB1139749A (en) Improvements in or relating to semiconductor devices
GB1133820A (en) Field-effect device with insulated gate
KR900002462A (en) Semiconductor devices
GB1109371A (en) Metal-oxide-semiconductor field effect transistor
UST964009I4 (en) High voltage semiconductor structure
ES8800789A1 (en) IMPROVEMENTS IN A MOS TRANSISTOR DEVICE
KR930009044A (en) Semiconductor devices
DE69112713D1 (en) Semiconductor device with an improved insulated gate type transistor.
GB1373960A (en) Field effect transistors
GB1202515A (en) Semiconductor device
GB1282616A (en) Semiconductor devices
GB1380466A (en) Gate protective device for insulated gate fieldeffect transistors
GB1138771A (en) Field effect device with overlapping insulated gates
SE7906289L (en) SEMICONDUCTOR DEVICE
JPS57192069A (en) Insulated gate field effect semiconductor device
GB1053428A (en)

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee