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GB1202515A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB1202515A
GB1202515A GB3706/69A GB370669A GB1202515A GB 1202515 A GB1202515 A GB 1202515A GB 3706/69 A GB3706/69 A GB 3706/69A GB 370669 A GB370669 A GB 370669A GB 1202515 A GB1202515 A GB 1202515A
Authority
GB
United Kingdom
Prior art keywords
insulating layer
metal layer
layer
substrate
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3706/69A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1968006635U external-priority patent/JPS4620485Y1/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB1202515A publication Critical patent/GB1202515A/en
Expired legal-status Critical Current

Links

Classifications

    • H10W74/40—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10W72/90—
    • H10W72/5363—
    • H10W72/59—

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

1,202,515. Semi-conductor devices. HITACHI Ltd. 22 Jan., 1969 [24 Jan., 1968; 2 Feb., 19681, No. 3706/69. Heading H1K. In a planar semi-conductor device wherein the PN junctions all terminate on a single surface, this surface being covered by an insulating layer, a second insulating layer is formed over the first insulating layer and a metal layer is formed on the surface of this second insulating layer. the two extra layers providing added protection against moisture or impurity ions penetrating to the semi-conductor surface. The invention may be applied to an IGFET having source 2 and drain 3 regions in a substrate 1, source, drain and gate electrodes 6, 7 and 8, respectively, and an insulating layer 4, 5, which extends over the whole surface of the device. In this embodiment the second insulating layer 9 carrying the metal layer 10 overlies the entire surface area of the source and drain regions and overlaps this area to cover at least the area of extent of the depletion layer which occurs with reverse voltage in use. The metal layer 10 may be in contact with the substrate through an aperture in the insulating layers. The substrate is of silicon and the insulating layer 4, 5 is of silicon oxide. The second insulating layer 9 is of silicon oxide, silicon nitride, aluminium oxide or a resin or plastics material. The metal layer 10 is of aluminium, gold or silver, and the electrodes 6, 7 and 8 are of aluminium, titanium, molybdenum, chromium or platinum. Such IGFETs may be used in integrated circuits, Fig. 11, not shown. The invention may also be applied to a bipolar transistor, Figs. 15-17, not shown, and plastics encapsulated transistors, Fig. 24, not shown.
GB3706/69A 1968-01-24 1969-01-22 Semiconductor device Expired GB1202515A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP376268 1968-01-24
JP1968006635U JPS4620485Y1 (en) 1968-02-02 1968-02-02

Publications (1)

Publication Number Publication Date
GB1202515A true GB1202515A (en) 1970-08-19

Family

ID=26337401

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3706/69A Expired GB1202515A (en) 1968-01-24 1969-01-22 Semiconductor device

Country Status (4)

Country Link
DE (1) DE1903342B2 (en)
FR (1) FR2000657A1 (en)
GB (1) GB1202515A (en)
NL (1) NL6901059A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS511396B1 (en) * 1970-09-07 1976-01-16
DE2503864A1 (en) * 1975-01-30 1976-08-05 Siemens Ag IGFET semiconductor component with doped region substrate - has semiconductor layer on insulating film with differently doped drain and source regions

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3767981A (en) * 1971-06-04 1973-10-23 Signetics Corp High voltage planar diode structure and method
US3961358A (en) * 1973-02-21 1976-06-01 Rca Corporation Leakage current prevention in semiconductor integrated circuit devices
GB2097581A (en) * 1981-04-24 1982-11-03 Hitachi Ltd Shielding semiconductor integrated circuit devices from light
JPS5984542A (en) * 1982-11-08 1984-05-16 Nec Corp High-frequency semiconductor integrated circuit
US5432127A (en) * 1989-06-30 1995-07-11 Texas Instruments Incorporated Method for making a balanced capacitance lead frame for integrated circuits having a power bus and dummy leads
US5700715A (en) * 1994-06-14 1997-12-23 Lsi Logic Corporation Process for mounting a semiconductor device to a circuit substrate

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1419107A (en) * 1964-02-04 1965-11-26 Fairchild Camera Instr Co Equipotential adjustment of the surface characteristics of a semiconductor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS511396B1 (en) * 1970-09-07 1976-01-16
DE2503864A1 (en) * 1975-01-30 1976-08-05 Siemens Ag IGFET semiconductor component with doped region substrate - has semiconductor layer on insulating film with differently doped drain and source regions

Also Published As

Publication number Publication date
DE1903342A1 (en) 1969-09-11
DE1903342B2 (en) 1971-05-13
NL6901059A (en) 1969-07-28
FR2000657A1 (en) 1969-09-12

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee