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GB1225405A - - Google Patents

Info

Publication number
GB1225405A
GB1225405A GB1225405DA GB1225405A GB 1225405 A GB1225405 A GB 1225405A GB 1225405D A GB1225405D A GB 1225405DA GB 1225405 A GB1225405 A GB 1225405A
Authority
GB
United Kingdom
Prior art keywords
crystal
melt
annular
crucible
july
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1225405A publication Critical patent/GB1225405A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C30B15/16—Heating of the melt or the crystallised materials by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1,225,405. Crystal-pulling. AIR REDUCTION CO. Inc. 31 July, 1968 [8 Aug., 1967; 15 July, 1968], No. 36444/68. Heading B1S. A single crystal 11 of silicon is pulled with rotation from a melt 12 heated by a complete or incomplete annular beam 13 which causes an annular turbulent zone around the crystal, a thin neck having a surface at an angle greater than 30‹ with the axis of the crystal being formed before the main pulling treatment is commenced. The diameter of the crystal being pulled may be varied or maintained constant by suitable control of the intensity and diameter of the annular zone. A supply rod and dopant may be fed to the melt outside the annular zone. As shown, the melt is contained in a crucible 18 having internal cooling passages 19, a lining of unmelted silicon being maintained inside the crucible. In a modification (Fig. 9), the melt is formed in the upper surface of a thick supply rod.
GB1225405D 1967-08-08 1968-07-31 Expired GB1225405A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US65917567A 1967-08-08 1967-08-08
US74487468A 1968-07-15 1968-07-15

Publications (1)

Publication Number Publication Date
GB1225405A true GB1225405A (en) 1971-03-17

Family

ID=27097768

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1225405D Expired GB1225405A (en) 1967-08-08 1968-07-31

Country Status (6)

Country Link
JP (1) JPS4832913B1 (en)
BE (1) BE719229A (en)
DE (1) DE1769935C3 (en)
FR (1) FR1583109A (en)
GB (1) GB1225405A (en)
SE (1) SE352249B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190085480A1 (en) * 2016-03-29 2019-03-21 Corner Star Limited Crystal Growth Apparatus and Related Methods

Also Published As

Publication number Publication date
DE1769935C3 (en) 1973-09-20
DE1769935B2 (en) 1973-02-08
FR1583109A (en) 1969-10-17
BE719229A (en) 1969-01-16
JPS4832913B1 (en) 1973-10-09
DE1769935A1 (en) 1971-01-14
SE352249B (en) 1972-12-27

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees