GB1212114A - Negative-temperature-coefficient resistors - Google Patents
Negative-temperature-coefficient resistorsInfo
- Publication number
- GB1212114A GB1212114A GB37463/68A GB3746368A GB1212114A GB 1212114 A GB1212114 A GB 1212114A GB 37463/68 A GB37463/68 A GB 37463/68A GB 3746368 A GB3746368 A GB 3746368A GB 1212114 A GB1212114 A GB 1212114A
- Authority
- GB
- United Kingdom
- Prior art keywords
- cathode
- ring
- anode
- aluminium
- protective ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000001681 protective effect Effects 0.000 abstract 3
- 239000010408 film Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- PWKWDCOTNGQLID-UHFFFAOYSA-N [N].[Ar] Chemical compound [N].[Ar] PWKWDCOTNGQLID-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000010445 mica Substances 0.000 abstract 1
- 229910052618 mica group Inorganic materials 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012544 monitoring process Methods 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 238000005546 reactive sputtering Methods 0.000 abstract 1
- 238000005488 sandblasting Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
- H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
- H01C7/041—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient formed as one or more layers or coatings
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
- Y10T29/49085—Thermally variable
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
- Y10T29/49099—Coating resistive material on a base
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Non-Adjustable Resistors (AREA)
- Thermistors And Varistors (AREA)
Abstract
1,212,114. Semiconductor devices. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 6 Aug., 1968 [9 Aug., 1967], No. 37463/68. Heading H1K. [Also in Division C7] An N.T.C. resistor is made as a thin film of aluminium-doped silicon nitride on a substrate. The film may be shaped by etching or sandblasting to obtain the desired resistance value and may then be given superimposed Ni/Cr and Au films as electrodes. The resistor may be formed by reactive sputtering using a cathode which includes aluminium. Several masked substrates (of e.g. glass, ceramic, or mica) are placed on a rotatable anode (41) opposite a silicon-aluminium-faced cathode of the same size (a small cathode may be used if the rotational axis of the anode is offset). The cathode is liquid-cooled and is surrounded by an earthed protective ring (30). The chamber is provided with transparent loading windows (24) and is evacuated by floor ducts, the argon-nitrogen mixture for sputtering being fed into the space between the cathode and the protective ring. Cathode construction is as shown. The cathode of,Fig; 3 has a grid of Al wires 52 over a silicon surface 51 of mono or polycrystalline material as one piece or as many platelets-discharge to the Al ring 53 is prevented by the proximity of the earthed protective ring (30). The cathode of Fig. 4 has provision for varying the exposed area of Al. Al ring 65 with its attached Al sectors 62 may be rotationally disposed with respect to the other Al ring 64 and sectors 63 to vary the relative exposed area of Si 61 and Al. In a modification the anode may be modified so' that resistance monitoring of the deposited nitride may be used to control the thickness of the deposit.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR117409A FR1543297A (en) | 1967-08-09 | 1967-08-09 | Negative temperature coefficient thin film resistors and method of manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1212114A true GB1212114A (en) | 1970-11-11 |
Family
ID=8636643
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB37463/68A Expired GB1212114A (en) | 1967-08-09 | 1968-08-06 | Negative-temperature-coefficient resistors |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3622901A (en) |
| AT (1) | AT283512B (en) |
| BE (1) | BE719309A (en) |
| DE (1) | DE1765914A1 (en) |
| FR (1) | FR1543297A (en) |
| GB (1) | GB1212114A (en) |
| NL (1) | NL6811250A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0241932A3 (en) * | 1986-04-17 | 1989-06-07 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Temperature detector |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4276535A (en) * | 1977-08-23 | 1981-06-30 | Matsushita Electric Industrial Co., Ltd. | Thermistor |
| US4392992A (en) * | 1981-06-30 | 1983-07-12 | Motorola, Inc. | Chromium-silicon-nitrogen resistor material |
| US4510178A (en) * | 1981-06-30 | 1985-04-09 | Motorola, Inc. | Thin film resistor material and method |
| US4531110A (en) * | 1981-09-14 | 1985-07-23 | At&T Bell Laboratories | Negative temperature coefficient thermistors |
| US4491822A (en) * | 1981-11-02 | 1985-01-01 | Xco International, Inc. | Heat sensitive cable |
| US4540972A (en) * | 1981-11-02 | 1985-09-10 | Xco International, Inc. | Heat sensitive cable |
| US4614024A (en) * | 1981-11-02 | 1986-09-30 | Xco International, Inc. | Method of manufacturing heat sensitive cable |
| US4647710A (en) * | 1982-02-26 | 1987-03-03 | Xco International, Inc. | Heat sensitive cable and method of making same |
| US4638107A (en) * | 1983-10-14 | 1987-01-20 | Xco International, Inc. | Heat sensitive tape and method of making same |
| FR2571538A1 (en) * | 1984-10-09 | 1986-04-11 | Thomson Csf | METHOD OF MAKING THIN FILM RESISTOR, AND RESISTANCE OBTAINED THEREBY |
| DE3709201A1 (en) * | 1987-03-20 | 1988-09-29 | Bosch Gmbh Robert | HEAT RADIATION SENSOR |
| JP3302313B2 (en) | 1996-12-27 | 2002-07-15 | キヤノン株式会社 | Antistatic film, image forming apparatus and method of manufacturing the same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2860219A (en) * | 1954-09-07 | 1958-11-11 | Gen Electric | Silicon current controlling devices |
| US3395089A (en) * | 1964-12-14 | 1968-07-30 | Bell Telephone Labor Inc | Method of depositing films of controlled specific resistivity and temperature coefficient of resistance using cathode sputtering |
| US3435399A (en) * | 1966-04-19 | 1969-03-25 | Gen Electric | Thermistor device and method of producing said device |
| US3472074A (en) * | 1966-12-29 | 1969-10-14 | Ibm | Maximum thermometer for surface temperature measurements |
-
1967
- 1967-08-09 FR FR117409A patent/FR1543297A/en not_active Expired
-
1968
- 1968-08-06 US US117409A patent/US3622901A/en not_active Expired - Lifetime
- 1968-08-06 GB GB37463/68A patent/GB1212114A/en not_active Expired
- 1968-08-06 DE DE19681765914 patent/DE1765914A1/en active Pending
- 1968-08-07 AT AT770468A patent/AT283512B/en not_active IP Right Cessation
- 1968-08-08 NL NL6811250A patent/NL6811250A/xx unknown
- 1968-08-09 BE BE719309D patent/BE719309A/xx unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0241932A3 (en) * | 1986-04-17 | 1989-06-07 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Temperature detector |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1543297A (en) | 1968-10-25 |
| US3622901A (en) | 1971-11-23 |
| DE1765914A1 (en) | 1971-10-28 |
| BE719309A (en) | 1969-02-10 |
| AT283512B (en) | 1970-08-10 |
| NL6811250A (en) | 1969-02-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |