GB1071614A - The manufacture of semi-conductor controlled rectifiers - Google Patents
The manufacture of semi-conductor controlled rectifiersInfo
- Publication number
- GB1071614A GB1071614A GB30227/64A GB3022764A GB1071614A GB 1071614 A GB1071614 A GB 1071614A GB 30227/64 A GB30227/64 A GB 30227/64A GB 3022764 A GB3022764 A GB 3022764A GB 1071614 A GB1071614 A GB 1071614A
- Authority
- GB
- United Kingdom
- Prior art keywords
- foil
- semi
- junction
- cavities
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H10P32/16—
-
- H10P95/00—
-
- H10P95/50—
Landscapes
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEL44987A DE1273699B (de) | 1963-05-30 | 1963-05-30 | Verfahren zum Kontaktieren von mindestens zwei benachbarten Zonen entgegengesetzten Leitungstyps eines steuerbaren Halbleiterbauelementes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1071614A true GB1071614A (en) | 1967-06-07 |
Family
ID=27211439
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB30227/64A Expired GB1071614A (en) | 1963-05-30 | 1964-07-30 | The manufacture of semi-conductor controlled rectifiers |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE1273699B (de) |
| FR (1) | FR1396920A (de) |
| GB (1) | GB1071614A (de) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6058595B2 (ja) * | 1975-09-08 | 1985-12-20 | 株式会社日立製作所 | シヨ−トエミツタ型サイリスタの製法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2796562A (en) * | 1952-06-02 | 1957-06-18 | Rca Corp | Semiconductive device and method of fabricating same |
| DE1040700B (de) * | 1956-11-16 | 1958-10-09 | Siemens Ag | Verfahren zur Herstellung eines Diffusionstransistors |
| FR1243865A (fr) * | 1959-09-08 | 1960-10-21 | Telecommunications Sa | Perfectionnement à la réalisation des diodes de commutation p-n-p-n au silicium |
| DE1144849B (de) * | 1961-07-21 | 1963-03-07 | Ass Elect Ind | Steuerbarer Halbleitergleichrichter mit pnpn-Struktur |
-
1963
- 1963-05-30 DE DEL44987A patent/DE1273699B/de active Pending
-
1964
- 1964-05-27 FR FR2514A patent/FR1396920A/fr not_active Expired
- 1964-07-30 GB GB30227/64A patent/GB1071614A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR1396920A (fr) | 1965-04-23 |
| DE1273699B (de) | 1968-07-25 |
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