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GB1071614A - The manufacture of semi-conductor controlled rectifiers - Google Patents

The manufacture of semi-conductor controlled rectifiers

Info

Publication number
GB1071614A
GB1071614A GB30227/64A GB3022764A GB1071614A GB 1071614 A GB1071614 A GB 1071614A GB 30227/64 A GB30227/64 A GB 30227/64A GB 3022764 A GB3022764 A GB 3022764A GB 1071614 A GB1071614 A GB 1071614A
Authority
GB
United Kingdom
Prior art keywords
foil
semi
junction
cavities
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB30227/64A
Inventor
Willi Gerlach
Guenter Koehl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Publication of GB1071614A publication Critical patent/GB1071614A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P32/16—
    • H10P95/00—
    • H10P95/50—

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)

Abstract

1,071,614. Semi-conductor devices. LICENTIA PATENT - VERWALTUNGS - G.m.b.H. July 30, 1964, No. 30227/64. Heading H1K. A junction of a semi-conductor device is short circuited within the area of an alloyed contact. In a first embodiment, a four layer diode comprises a body of semi-conductor material with two diffused junctions 12, 23. Parts of one of the outer regions 3 are covered by growing a thin layer of oxide or by providing a thin layer of carbon on them. A gold-antimony foil 5 is placed on the surface and the body is heated to alloy foil 5 to layer 3 at the unprotected areas to produce a plurality of emitter regions 4 interconnected by foil 5. The foil 5 also makes contact with region 3 as at 35 to short-circuit the emitter junction to improve the temperature stability of the device. In an alternative embodiment, Fig. 3 (not shown), the foil is alloyed over the whole of its area, cavities are formed in the foil extending completely through the recrystallized region to expose the junction, and the cavities are filled with molten conductive material which short circuits the junction. An SCR, Fig. 3c (not shown), may be produced by arranging the cavities in a ring surrounding a central opening through which a control electrode (7) extends to contact the base layer (3).
GB30227/64A 1963-05-30 1964-07-30 The manufacture of semi-conductor controlled rectifiers Expired GB1071614A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEL44987A DE1273699B (en) 1963-05-30 1963-05-30 Method for contacting at least two adjacent zones of opposite conductivity types of a controllable semiconductor component

Publications (1)

Publication Number Publication Date
GB1071614A true GB1071614A (en) 1967-06-07

Family

ID=27211439

Family Applications (1)

Application Number Title Priority Date Filing Date
GB30227/64A Expired GB1071614A (en) 1963-05-30 1964-07-30 The manufacture of semi-conductor controlled rectifiers

Country Status (3)

Country Link
DE (1) DE1273699B (en)
FR (1) FR1396920A (en)
GB (1) GB1071614A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6058595B2 (en) * 1975-09-08 1985-12-20 株式会社日立製作所 Manufacturing method of short emitter type thyristor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2796562A (en) * 1952-06-02 1957-06-18 Rca Corp Semiconductive device and method of fabricating same
DE1040700B (en) * 1956-11-16 1958-10-09 Siemens Ag Method of manufacturing a diffusion transistor
FR1243865A (en) * 1959-09-08 1960-10-21 Telecommunications Sa Improvement in the realization of p-n-p-n silicon switching diodes
DE1144849B (en) * 1961-07-21 1963-03-07 Ass Elect Ind Controllable semiconductor rectifier with pnpn structure

Also Published As

Publication number Publication date
FR1396920A (en) 1965-04-23
DE1273699B (en) 1968-07-25

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