GB1041504A - A process for melting a rod of crystalline material zone-by-zone - Google Patents
A process for melting a rod of crystalline material zone-by-zoneInfo
- Publication number
- GB1041504A GB1041504A GB16420/65A GB1642065A GB1041504A GB 1041504 A GB1041504 A GB 1041504A GB 16420/65 A GB16420/65 A GB 16420/65A GB 1642065 A GB1642065 A GB 1642065A GB 1041504 A GB1041504 A GB 1041504A
- Authority
- GB
- United Kingdom
- Prior art keywords
- conductor
- zone
- coil
- rod
- removeable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002178 crystalline material Substances 0.000 title 1
- 238000002844 melting Methods 0.000 title 1
- 230000008018 melting Effects 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004020 conductor Substances 0.000 abstract 6
- 230000006698 induction Effects 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000110 cooling liquid Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/22—Furnaces without an endless core
- H05B6/30—Arrangements for remelting or zone melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Silicon Compounds (AREA)
Abstract
At least one molten zone is passed upwards through a silicon rod having a diameter of 30-40 mm from a thin seed using a water-cooled induction coil associated with a lower short-circuited conductor and at least one further molten zone is passed upwards through the rod from the seed using a water-cooled induction coil without a lower short-circuited conductor. The same or a separate coil may be used in the second passage; in the former case, a non-removeable conductor is de-short-circuited. According to Fig. 1 (not shown), a coil 4 has a conductor in the form of a removeable closed ring 5. According to Fig. 4 (not shown), a non-removeable conductor is in the form of a water-cooled coil 15 having engageable electric contacts 16a and 16b which are opened, by varying the pressure of the cooling liquid, to de-short-circuit the conductor.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES90543A DE1245319B (en) | 1964-04-15 | 1964-04-15 | Process for crucible-free zone melting |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1041504A true GB1041504A (en) | 1966-09-07 |
Family
ID=7515902
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB16420/65A Expired GB1041504A (en) | 1964-04-15 | 1965-04-15 | A process for melting a rod of crystalline material zone-by-zone |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3340017A (en) |
| BE (1) | BE662546A (en) |
| CH (1) | CH418311A (en) |
| DE (1) | DE1245319B (en) |
| GB (1) | GB1041504A (en) |
| NL (1) | NL6502374A (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1164681B (en) * | 1958-12-24 | 1964-03-05 | Siemens Ag | Process for the production of a uniformly doped rod made of semiconductor material by crucible-free zone melting |
| DE1115714B (en) * | 1959-09-23 | 1961-10-26 | Siemens Ag | Process for the production of monocrystalline semiconductor material |
| NL253526A (en) * | 1959-08-14 |
-
1964
- 1964-04-15 DE DES90543A patent/DE1245319B/en active Pending
-
1965
- 1965-02-25 NL NL6502374A patent/NL6502374A/xx unknown
- 1965-03-10 CH CH333065A patent/CH418311A/en unknown
- 1965-04-13 US US447663A patent/US3340017A/en not_active Expired - Lifetime
- 1965-04-15 GB GB16420/65A patent/GB1041504A/en not_active Expired
- 1965-04-15 BE BE662546D patent/BE662546A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| BE662546A (en) | 1965-10-15 |
| NL6502374A (en) | 1965-10-18 |
| CH418311A (en) | 1966-08-15 |
| US3340017A (en) | 1967-09-05 |
| DE1245319B (en) | 1967-07-27 |
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